JPH03210784A - Semiconductor manufacturing device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus that performs heating by irradiating light.

[Conventional technology]

In recent years, a lamp annealing method in which annealing in a semiconductor manufacturing process is performed using lamp heating has been adopted. This lamp annealing process can be performed at a high temperature and in a short time, so it is particularly advantageous in manufacturing GaAs semiconductor devices.

As a device for carrying out this lamp annealing process, as shown in FIG. 2, a rod-shaped infrared lamp 10a (
A lamp in which a tungsten filament is sealed in a transparent quartz glass tube and a % rogen gas inside is arranged in parallel above and below a semiconductor substrate 1 placed on a support stand 20, or this infrared lamp 10a is Third
As shown in the figure, a double structure heating device was used in which infrared lamps 10b were arranged parallel to each other and infrared lamps 10b were further arranged to intersect with each other. Heating control of these infrared lamps has been performed based on temperature information from temperature detectors provided near the surface of the semiconductor substrate, such as in the center and periphery.

[Problem to be solved by the invention]

However, in the conventional heating device having the above structure, even if the heating of each infrared lamp is controlled, it is essentially impossible to make the heat distribution on the semiconductor substrate uniform. For example, in a heating device in which infrared lamps are arranged as shown in FIGS. 2 and 3, a group of lamps located at the center and a group of lamps located at the periphery of a semiconductor substrate are used to control the supplied power. It is common practice to uniformize the heat distribution on the semiconductor substrate by controlling heating to create a difference, but in the direction parallel to the infrared lamp, the temperature distribution becomes mountain-shaped between the center and the periphery of the semiconductor substrate. This made it difficult to achieve uniformity. For this reason, in the past, the heating section of the device was made large and heating was performed only at the center of the heating section.

An object of the present invention is to provide a semiconductor manufacturing apparatus that solves the above problems.

[Means to solve the problem]

The semiconductor manufacturing apparatus of the present invention is a semiconductor manufacturing apparatus that heats a semiconductor substrate by irradiating light, and includes annular lamp heating means arranged concentrically around a certain point, and each of these heating lamp means. The lamp heating device is characterized by comprising a temperature detection means provided corresponding to the temperature detection means, and a control means for controlling the lamp heating means according to information from the corresponding temperature detection means.

[Effect]

In the semiconductor manufacturing apparatus of the present invention, parts equidistant from the center of the semiconductor substrate can be heated under the same conditions, and the heating conditions can be controlled. Here, the semiconductor substrate has a substantially circular shape, and the thermal state of a certain part of the semiconductor substrate depends on the distance from the center of the semiconductor substrate to that part. Therefore, it is thought that the thermal conditions of the parts at the same distance from the center are the same. Therefore, by heating the parts of the semiconductor substrate at approximately the same distance from the center so that they are in the same thermal state, it is possible to maintain a uniform heat distribution over the entire semiconductor substrate.

〔Example〕

Embodiments according to the present invention will be described below with reference to the drawings.

Elements with the same reference numerals have the same functions, so duplicate explanations will be omitted.

FIG. 1 shows the configuration of a heating section which is a characteristic part of the semiconductor manufacturing apparatus according to the present invention.

As shown in FIG.
The support table 2 has an annular lamp section 3.4 disposed above and below the support table 2.

As shown in FIG. 1, the upper annular lamp group 3 includes donut-shaped annular infrared lamps 31 arranged concentrically.
．． 32, 33, and 34, and each infrared lamp 31 and the like is equipped with a reflecting mirror (not shown) for condensing light onto the semiconductor substrate 1 placed on the support base 2. Furthermore, the terminal end 31 of the infrared lamp 31, 32, 33
a.

32 a s 33 a is as shown in Figure 1(b),
They rise and extend outward beyond the infrared lamps located around them. In this way, the power supply terminals located at the terminal end portion 31a of each infrared lamp are drawn out. The annular lamp group 4 located on the lower side of the support base 2 is configured similarly to the annular lamp group 3 located on the upper side, and as shown in FIG. 1(b), the infrared lamp 41 provided there The terminal end 41a etc. also fall downward,
It extends further outward. The infrared lamps 34 and 44 located at the outermost periphery are arranged so that their inner peripheries are located outside the outer periphery of the semiconductor substrate 1 to be heated, and heat the outer periphery of the semiconductor substrate. 1 outer peripheral part 1a
It prevents heat from escaping.

Further, the heating section is provided with temperature sensors 51.52.53.54 corresponding to the infrared lamps 31.32.33.34 for measuring the temperature of the semiconductor substrate to be heated. Specifically, for the infrared lamp 31, the infrared lamp 32 is placed at the center position of the semiconductor substrate 1 to be heated.
and 33, the position on the semiconductor substrate 1 to be heated corresponding to the respective heating center (the center position of the annular ring part), and the outermost infrared lamp 34, the outermost position of the semiconductor substrate. It is provided for. and infrared lamp 3
1.41 is the temperature information from the temperature sensor 51, the infrared lamp 32 etc. is the temperature information from the temperature sensor 52, the infrared lamp 33 etc. is the temperature information from the temperature sensor 53, and the infrared lamp 34 is the temperature information from the temperature sensor 54. The temperature is controlled according to the temperature information. As the temperature sensor 51 and the like used here, an alumel-chromel thermocouple is used. This temperature control is executed independently by a computer or the like. Generally, in a heating device, the time from setting the temperature to reaching a predetermined temperature is several milligrams to several hundred milliseconds, so it is fully possible to control a plurality of infrared lamps with one computer.

Furthermore, this heating section is provided with a gas supply port 61 for flowing an inert gas onto the semiconductor substrate to be heated, so that convection is uniformly generated along the surface of the semiconductor substrate 1 from the center to the outer periphery. is configured to occur. This ensures uniform heating and cooling effects.

The present invention is not limited to the above embodiments, and various modifications may be made.

Specifically, in the above embodiment, heating is performed using an annular infrared lamp, but the use of such an infrared lamp is not limited to the heating, and the heating can be performed in a plurality of annular ways around the center of the semiconductor substrate. Lamps may be arranged and controlled according to temperature information from one temperature sensor. In this case, each of the plurality of heating lamps needs to have substantially the same heating characteristics.

In the above embodiment, an alumel-chromel thermocouple is used as the temperature sensor, but the present invention is not limited to this, and various temperature sensors such as a pyrometer can also be used. Further, the number of temperature sensors is not limited to four, but may be any number as long as it is three or more. Furthermore, a plurality of temperature sensors may be provided for one annular infrared lamp, information from these temperature sensors may be analyzed, and the results may be used to control the corresponding annular infrared lamp.

Further, in the above embodiment, an example in which four annular infrared lamps are used has been described, but the number is not limited, and a more uniform temperature state of the semiconductor substrate can be achieved by increasing the number.

Furthermore, in the above embodiment, the terminal end of the substantially annular infrared lamp is bent upward or downward and pulled out to the outside.
It is also possible to use an infrared lamp formed in a closed annular shape, with a power supply terminal drawn out from a part of the infrared lamp.

〔Effect of the invention〕

In the semiconductor manufacturing apparatus of the present invention, as described above, the heating means capable of heating under the same conditions are arranged concentrically, so that uniform heat treatment of the semiconductor substrate can be performed. Therefore, by using this semiconductor manufacturing apparatus, uniform and high quality semiconductor devices can be manufactured at a high yield.

[Brief explanation of drawings]

FIG. 1 is a configuration diagram of a characteristic portion of an embodiment of a semiconductor manufacturing apparatus according to the present invention, and FIGS. 2 and 3 are arrangement configuration diagrams of rod-shaped infrared lamps of a conventional semiconductor manufacturing apparatus. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Support stand, 3... Upper lamp group part, 4... Lower lamp group part, 31.32.33
．． 34.41.44...Annular infrared lamp, 51.5
2.53.54...Temperature sensor, 61...Gas supply port.

Claims (1)

[Claims] 1. A semiconductor manufacturing apparatus that heats a semiconductor substrate by irradiating light, comprising: a plurality of substantially annular lamp heating means arranged substantially concentrically around a certain point; and the heating lamp means. A semiconductor manufacturing apparatus comprising: temperature detection means provided correspondingly to each of the lamp heating means; and a control means for controlling the lamp heating means according to information from the corresponding temperature detection means.