JPH03215661A - Ion plating device - Google Patents
Ion plating deviceInfo
- Publication number
- JPH03215661A JPH03215661A JP1108190A JP1108190A JPH03215661A JP H03215661 A JPH03215661 A JP H03215661A JP 1108190 A JP1108190 A JP 1108190A JP 1108190 A JP1108190 A JP 1108190A JP H03215661 A JPH03215661 A JP H03215661A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- evaporating
- hollow cathode
- induction heating
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007733 ion plating Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000001704 evaporation Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000006698 induction Effects 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910002804 graphite Inorganic materials 0.000 abstract description 3
- 239000010439 graphite Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000010891 electric arc Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 description 3
- 150000002830 nitrogen compounds Chemical class 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は基体上に金属または半導体またはそれらを含む
化合物の被膜を形成するために用いられる、イオンプレ
ーティング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion plating apparatus used for forming a film of a metal, a semiconductor, or a compound containing them on a substrate.
ホロー陰極を用いアークライク放電にょるルツボ内の芸
発物質を融解、蒸発、プラズマ化して、基体上に蒸発物
質または蒸発物質を含む化合物の被膜を形成するイオン
プレーティング装置において、ルツボの周囲にワーキン
グコイルを設置し、誘導加熱を行うことにより蒸発物質
を均一に融解し、安定的に蒸発させることができるよう
にした。In an ion plating device that uses a hollow cathode to melt, evaporate, and turn the evaporated material in the crucible into plasma using an arc-like discharge to form a film of the evaporated material or a compound containing the evaporated material on the substrate, the area around the crucible is A working coil was installed to perform induction heating to uniformly melt the evaporated substance and enable stable evaporation.
従来のホロー陰極方弐のイオンプレーティング装置では
第2図に示すように、アルゴンガスなどを導入できるよ
うな管状のホロー陰極4より発生した電子ビーム6が、
直線的にルツポ2bに向かい蒸発物質1の表面に照射さ
れる。すなわち、放電のエネルギーにより蒸発物質1の
融解、蒸発、プラズマ化を行っている。そして、イオン
化した蒸発物質(図示せず)は、ハイアス7を印加され
た真空チャンパ8内の基体5上に析出し被膜を形成する
。なお、真空チャンバ8内に窒素ガス、炭化水素ガス、
酸素ガスなどを反応ガスノズル9より導入することによ
り、蒸発物質の化合物やそれらの混合物の被膜形成を行
っていた。In a conventional hollow cathode ion plating apparatus, as shown in FIG. 2, an electron beam 6 generated from a tubular hollow cathode 4 into which argon gas or the like can be introduced
The light heads straight toward the receptacle 2b and is irradiated onto the surface of the evaporated substance 1. That is, the evaporative substance 1 is melted, evaporated, and turned into plasma by the energy of the discharge. Then, the ionized evaporated substance (not shown) is deposited to form a film on the substrate 5 in the vacuum chamber 8 to which the high ass voltage 7 is applied. Note that nitrogen gas, hydrocarbon gas,
By introducing oxygen gas or the like through the reaction gas nozzle 9, a film of a compound of the evaporated substance or a mixture thereof was formed.
しかしながら、従来のホロー陰極方式のイオンプレーテ
ィング装置では、電子ビーム6の照射面積が狭く、茎発
物質1表面の一部のみが集中的に融解し、例えばアルミ
ニウムなどを蒸発物質に用いた場合には、ルツボ内のア
ルミニウム全体は融解しないまま照射された部分のみが
著しく蒸発し、空洞状に穴が開いてしまいルツボを損傷
してしまったり、突沸を生しるなどの問題点を存してお
り、被膜の形成は極めて困難であった。However, in the conventional hollow cathode type ion plating apparatus, the irradiation area of the electron beam 6 is small, and only a part of the surface of the stem material 1 is intensively melted. However, the entire aluminum inside the crucible does not melt, but only the irradiated portion evaporates significantly, creating a hollow hole that damages the crucible and causes bumping. Therefore, it was extremely difficult to form a film.
本発明は、上記のような点に鑑みて、ルツボの周囲に設
置したワーキングコイルによる誘導加熱を併用すること
により、ルツボ内の蒸発物質を均一に融解し、安定的に
蒸発させることが可能となる。In view of the above points, the present invention makes it possible to uniformly melt the evaporated substance in the crucible and evaporate it stably by using induction heating using a working coil installed around the crucible. Become.
〔作用]
ワーキングコイルより交番磁界を印加させるとルツボ(
実施例では黒鉛を使用)および、物質によっては蒸発物
質自身にも渦電流が生し、ジュール熱によって温度が上
昇し、融解していく。従って放電のみによる局部的な融
解と異なり蒸発物質を均一に融解し、安定的に蒸発させ
ることが可能である。さらに、誘導出力を調節すること
により、蒸発量を制御することができる。[Effect] When an alternating magnetic field is applied from the working coil, the crucible (
In the example, graphite is used), and depending on the substance, eddy currents are generated in the evaporated substance itself, the temperature rises due to Joule heat, and it melts. Therefore, unlike local melting caused by electric discharge alone, it is possible to uniformly melt the evaporated substance and evaporate it stably. Furthermore, the amount of evaporation can be controlled by adjusting the induction output.
図面を参照して本発明の実施例を説明する。 Embodiments of the present invention will be described with reference to the drawings.
第1図は本発明に係わる実施例のイオンプレーティング
装置の構造を示した断面図である。FIG. 1 is a sectional view showing the structure of an ion plating apparatus according to an embodiment of the present invention.
暴発物質1を入れた黒鉛製のルツポ2aの下部に、誘導
加熱のためのワーキングコイル3が設置されている。こ
のワーキングコイル3は、銅管を加工したもので内部に
冷媒を流して過熱を防止している。A working coil 3 for induction heating is installed at the bottom of a graphite receptacle 2a containing an explosive substance 1. The working coil 3 is made from a processed copper tube, and a refrigerant is flowed inside to prevent overheating.
誘導加熱により蒸発物質1が融解した後、ルツボ2a上
部にあるホロー陰極4にアルゴンガスを流し、ホロー陰
極4の負の電圧を印加することによりアークライクな放
電が生し、その熱によって蕉発物質1が融解し、蒸発す
る。さらに、蒸発した蒸発物質1は電子ビーム6でプラ
ズマ化して、バイアス7を印加している基体5に析出し
被膜を形成する。After the evaporated substance 1 is melted by induction heating, argon gas is flowed through the hollow cathode 4 at the top of the crucible 2a, and a negative voltage is applied to the hollow cathode 4 to generate an arc-like discharge, and the heat causes flea generation. Substance 1 melts and evaporates. Further, the evaporated substance 1 is turned into plasma by the electron beam 6, and is deposited on the substrate 5 to which a bias 7 is applied to form a film.
また、実施例では反応ガスノズル9より窒素ガスを導入
し、電子ビーム6でプラズマ化し、基体上に窒素化合物
の被膜を形成した。Further, in the example, nitrogen gas was introduced from the reaction gas nozzle 9 and turned into plasma by the electron beam 6 to form a nitrogen compound film on the substrate.
本発明による実施例の結果を表1にまとめて示した。従
来のホロー陰極放電方式による被膜の形成が困難であっ
た蒸発物質の例としてアルミニウム、ケイ素を用いた実
施例と、それらの窒素化合物の被膜を形成した実施例を
示したものである。The results of Examples according to the present invention are summarized in Table 1. Examples of evaporated substances in which it is difficult to form a film using the conventional hollow cathode discharge method include examples using aluminum and silicon, and examples in which films of nitrogen compounds thereof are formed.
蒸発物質にアルミニウムを用いた場合、従来の装置では
前述のように電子ビームの照射された部分だけが選択的
に芸発し、放電開始より数分でルツボ底部に1員傷しは
じめるため、放電を中止しなければならなかった。しか
し、本発明による誘導加熱を併用した場合には、アルミ
ニウム全体が融解し安定した陰極放電が可能であった。When aluminum is used as the evaporation material, in conventional equipment, only the part irradiated with the electron beam selectively emit radiation as described above, and the bottom of the crucible begins to be damaged within a few minutes from the start of the discharge, making it difficult to stop the discharge. I had to cancel it. However, when induction heating according to the present invention was used in combination, the entire aluminum was melted and stable cathode discharge was possible.
実施例ではアルミニウム多結晶膜と、反応ガスとして窒
素ガスを導入して窒化アルミニウム多結晶膜の被覆に成
功した。なお、析出物はXRDパターン、AES.IR
により同定を行った。In the example, an aluminum polycrystalline film and an aluminum nitride polycrystalline film were successfully coated by introducing nitrogen gas as a reactive gas. In addition, the precipitate has an XRD pattern, AES. IR
Identification was performed by
蒸発物質にケイ素を用いた場合、従来の装置ではルツボ
内で融解するものの、不均一に加熱されるために突沸が
生し、?&滴が基体上に飛散して膜状の被覆は不可能で
あった。しかし、誘導加熱を併用した場合には突沸は生
じず、アモルファスのケイ素膜およびアモルファスの窒
化ケイ素膜の被覆に成功した。なお、析出物はAES.
SIMSにより同定を行った。When using silicon as the evaporating substance, although it melts in the crucible using conventional equipment, bumping occurs due to uneven heating. & Droplets were scattered onto the substrate, making it impossible to form a film-like coating. However, when induction heating was used in combination, no bumping occurred, and we succeeded in coating amorphous silicon films and amorphous silicon nitride films. In addition, the precipitate is AES.
Identification was performed by SIMS.
以上のように本発明によれば、ホロー陰極放電と併用し
て蒸発物質を誘導加熱することで、従来のホロー陰極放
電方式イオンプレーティング装置では被膜の形成が極め
て困難であったアルミニウムやケイ素などの蒸発物質も
使用が可能となり、それらの窒素化合物の被膜の形成も
可能となった。As described above, according to the present invention, by inductively heating the evaporated material in combination with hollow cathode discharge, it is possible to produce coatings on aluminum and silicon, which were extremely difficult to form with conventional hollow cathode discharge type ion plating equipment. It has become possible to use evaporated substances, and it has also become possible to form films of these nitrogen compounds.
さらに、誘導加熱を併用したことにより、従来のホロー
陰極放電方式における蒸発物質の融解、蒸発とプラズマ
化の2つの作用を別々に制御することが可能となり、成
膜速度の制御が容易になる等の種々の効果がある。Furthermore, by using induction heating in combination, it becomes possible to separately control the two effects of melting, evaporation, and plasma formation of the evaporated substance in the conventional hollow cathode discharge method, making it easier to control the film formation rate, etc. There are various effects.
第1図は本発明に係わる実施例のイオンプレティング装
置の構造を示した断面図、第2図は従来のホロー陰極放
電方式のイオンブレーテイング装置の構造を示した断面
図である。
1・・・・・芸発物質
2a
3 ・ ・
4 ・ ・
5 ・ ・
6 ・ ・
7 ・ ・
8 ・ ・
9 ・ ・
10・ ・
2b・・・ルツボ
・ワーキングコイル
・・・ホロー陰極
・・・基体
・・・電子ビーム
・・・ハイアス
・・真空チャンハ
・・・反応ガスノズル
・・・ヒータFIG. 1 is a sectional view showing the structure of an ion plating apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing the structure of a conventional hollow cathode discharge type ion plating apparatus. 1... Artificial substance 2a 3 ・ ・ 4 ・ 5 ・ ・ 6 ・ ・ 7 ・ ・ 8 ・ ・ 9 ・ 10 ・ 2b... Crucible working coil... Hollow cathode... Substrate...Electron beam...Hiasu...Vacuum chamber...Reaction gas nozzle...Heater
Claims (1)
発、プラズマ化させ、基体上に被膜を形成するイオンプ
レーティング装置において、 前記ルツボに誘導加熱を併用して前記蒸発物質を融解、
蒸発させることを特徴とするイオンプレーティング装置
。[Scope of Claims] An ion plating device that melts, evaporates, and turns evaporated material in a crucible into plasma using hollow cathode discharge to form a film on a substrate, wherein the crucible is heated in combination with induction heating to evaporate the evaporated material. melting,
An ion plating device characterized by evaporation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1108190A JPH03215661A (en) | 1990-01-19 | 1990-01-19 | Ion plating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1108190A JPH03215661A (en) | 1990-01-19 | 1990-01-19 | Ion plating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03215661A true JPH03215661A (en) | 1991-09-20 |
Family
ID=11768029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1108190A Pending JPH03215661A (en) | 1990-01-19 | 1990-01-19 | Ion plating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03215661A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6231826B1 (en) | 1996-03-19 | 2001-05-15 | Kawasaki Steel Corporation | Process and apparatus for refining silicon |
-
1990
- 1990-01-19 JP JP1108190A patent/JPH03215661A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6231826B1 (en) | 1996-03-19 | 2001-05-15 | Kawasaki Steel Corporation | Process and apparatus for refining silicon |
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