JPH03215661A - Ion plating device - Google Patents

Ion plating device

Info

Publication number
JPH03215661A
JPH03215661A JP1108190A JP1108190A JPH03215661A JP H03215661 A JPH03215661 A JP H03215661A JP 1108190 A JP1108190 A JP 1108190A JP 1108190 A JP1108190 A JP 1108190A JP H03215661 A JPH03215661 A JP H03215661A
Authority
JP
Japan
Prior art keywords
crucible
evaporating
hollow cathode
induction heating
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1108190A
Other languages
Japanese (ja)
Inventor
Jun Tsuneyoshi
潤 恒吉
Mizuaki Suzuki
瑞明 鈴木
Matsuo Kishi
松雄 岸
Kenichi Ogawa
健一 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP1108190A priority Critical patent/JPH03215661A/en
Publication of JPH03215661A publication Critical patent/JPH03215661A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To uniformly melt an evaporating material and to stably evaporate this material by melting and evaporating the evaporating material in a crucible by a hollow cathode discharge to form the plasma thereof and melting and evaporating the material by making combination use of induction heating. CONSTITUTION:An AC magnetic field is impressed from a working coil 3 mounted in the crucible 2a consisting of graphite, etc., in a vacuum chamber 8. The evaporating material 1, such as Si, housed therein is melted by induction heating in this way. Further, an arc discharge is effected between a hollow cathode 4 to supply gaseous Ar, etc., and the crucible 2a to melt, heat and evaporate the above-mentioned evaporating material 1 and the vapor thereof is made into the plasma by an electron beam 6. A thin film of Si3N4, etc., is formed by causing reaction with a reactive gas, such as a-Si or N2, etc., on a base body 5 which is impressed with a bias 7 and is heated to a prescribed temp. by a heater 10. The hollow cathode discharge and the induction heating are used in combination for heating and melting the evaporating material 1 in the above-mentioned method, by which the evaporating material 1 is uniformly heated and melted. The damaging, bumping, etc., of the crucible 2a are thus prevented and the evaporation and film formation are stably executed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は基体上に金属または半導体またはそれらを含む
化合物の被膜を形成するために用いられる、イオンプレ
ーティング装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion plating apparatus used for forming a film of a metal, a semiconductor, or a compound containing them on a substrate.

〔発明の概要〕[Summary of the invention]

ホロー陰極を用いアークライク放電にょるルツボ内の芸
発物質を融解、蒸発、プラズマ化して、基体上に蒸発物
質または蒸発物質を含む化合物の被膜を形成するイオン
プレーティング装置において、ルツボの周囲にワーキン
グコイルを設置し、誘導加熱を行うことにより蒸発物質
を均一に融解し、安定的に蒸発させることができるよう
にした。
In an ion plating device that uses a hollow cathode to melt, evaporate, and turn the evaporated material in the crucible into plasma using an arc-like discharge to form a film of the evaporated material or a compound containing the evaporated material on the substrate, the area around the crucible is A working coil was installed to perform induction heating to uniformly melt the evaporated substance and enable stable evaporation.

〔従来の技術〕[Conventional technology]

従来のホロー陰極方弐のイオンプレーティング装置では
第2図に示すように、アルゴンガスなどを導入できるよ
うな管状のホロー陰極4より発生した電子ビーム6が、
直線的にルツポ2bに向かい蒸発物質1の表面に照射さ
れる。すなわち、放電のエネルギーにより蒸発物質1の
融解、蒸発、プラズマ化を行っている。そして、イオン
化した蒸発物質(図示せず)は、ハイアス7を印加され
た真空チャンパ8内の基体5上に析出し被膜を形成する
。なお、真空チャンバ8内に窒素ガス、炭化水素ガス、
酸素ガスなどを反応ガスノズル9より導入することによ
り、蒸発物質の化合物やそれらの混合物の被膜形成を行
っていた。
In a conventional hollow cathode ion plating apparatus, as shown in FIG. 2, an electron beam 6 generated from a tubular hollow cathode 4 into which argon gas or the like can be introduced
The light heads straight toward the receptacle 2b and is irradiated onto the surface of the evaporated substance 1. That is, the evaporative substance 1 is melted, evaporated, and turned into plasma by the energy of the discharge. Then, the ionized evaporated substance (not shown) is deposited to form a film on the substrate 5 in the vacuum chamber 8 to which the high ass voltage 7 is applied. Note that nitrogen gas, hydrocarbon gas,
By introducing oxygen gas or the like through the reaction gas nozzle 9, a film of a compound of the evaporated substance or a mixture thereof was formed.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、従来のホロー陰極方式のイオンプレーテ
ィング装置では、電子ビーム6の照射面積が狭く、茎発
物質1表面の一部のみが集中的に融解し、例えばアルミ
ニウムなどを蒸発物質に用いた場合には、ルツボ内のア
ルミニウム全体は融解しないまま照射された部分のみが
著しく蒸発し、空洞状に穴が開いてしまいルツボを損傷
してしまったり、突沸を生しるなどの問題点を存してお
り、被膜の形成は極めて困難であった。
However, in the conventional hollow cathode type ion plating apparatus, the irradiation area of the electron beam 6 is small, and only a part of the surface of the stem material 1 is intensively melted. However, the entire aluminum inside the crucible does not melt, but only the irradiated portion evaporates significantly, creating a hollow hole that damages the crucible and causes bumping. Therefore, it was extremely difficult to form a film.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、上記のような点に鑑みて、ルツボの周囲に設
置したワーキングコイルによる誘導加熱を併用すること
により、ルツボ内の蒸発物質を均一に融解し、安定的に
蒸発させることが可能となる。
In view of the above points, the present invention makes it possible to uniformly melt the evaporated substance in the crucible and evaporate it stably by using induction heating using a working coil installed around the crucible. Become.

〔作用] ワーキングコイルより交番磁界を印加させるとルツボ(
実施例では黒鉛を使用)および、物質によっては蒸発物
質自身にも渦電流が生し、ジュール熱によって温度が上
昇し、融解していく。従って放電のみによる局部的な融
解と異なり蒸発物質を均一に融解し、安定的に蒸発させ
ることが可能である。さらに、誘導出力を調節すること
により、蒸発量を制御することができる。
[Effect] When an alternating magnetic field is applied from the working coil, the crucible (
In the example, graphite is used), and depending on the substance, eddy currents are generated in the evaporated substance itself, the temperature rises due to Joule heat, and it melts. Therefore, unlike local melting caused by electric discharge alone, it is possible to uniformly melt the evaporated substance and evaporate it stably. Furthermore, the amount of evaporation can be controlled by adjusting the induction output.

〔実施例〕〔Example〕

図面を参照して本発明の実施例を説明する。 Embodiments of the present invention will be described with reference to the drawings.

第1図は本発明に係わる実施例のイオンプレーティング
装置の構造を示した断面図である。
FIG. 1 is a sectional view showing the structure of an ion plating apparatus according to an embodiment of the present invention.

暴発物質1を入れた黒鉛製のルツポ2aの下部に、誘導
加熱のためのワーキングコイル3が設置されている。こ
のワーキングコイル3は、銅管を加工したもので内部に
冷媒を流して過熱を防止している。
A working coil 3 for induction heating is installed at the bottom of a graphite receptacle 2a containing an explosive substance 1. The working coil 3 is made from a processed copper tube, and a refrigerant is flowed inside to prevent overheating.

誘導加熱により蒸発物質1が融解した後、ルツボ2a上
部にあるホロー陰極4にアルゴンガスを流し、ホロー陰
極4の負の電圧を印加することによりアークライクな放
電が生し、その熱によって蕉発物質1が融解し、蒸発す
る。さらに、蒸発した蒸発物質1は電子ビーム6でプラ
ズマ化して、バイアス7を印加している基体5に析出し
被膜を形成する。
After the evaporated substance 1 is melted by induction heating, argon gas is flowed through the hollow cathode 4 at the top of the crucible 2a, and a negative voltage is applied to the hollow cathode 4 to generate an arc-like discharge, and the heat causes flea generation. Substance 1 melts and evaporates. Further, the evaporated substance 1 is turned into plasma by the electron beam 6, and is deposited on the substrate 5 to which a bias 7 is applied to form a film.

また、実施例では反応ガスノズル9より窒素ガスを導入
し、電子ビーム6でプラズマ化し、基体上に窒素化合物
の被膜を形成した。
Further, in the example, nitrogen gas was introduced from the reaction gas nozzle 9 and turned into plasma by the electron beam 6 to form a nitrogen compound film on the substrate.

本発明による実施例の結果を表1にまとめて示した。従
来のホロー陰極放電方式による被膜の形成が困難であっ
た蒸発物質の例としてアルミニウム、ケイ素を用いた実
施例と、それらの窒素化合物の被膜を形成した実施例を
示したものである。
The results of Examples according to the present invention are summarized in Table 1. Examples of evaporated substances in which it is difficult to form a film using the conventional hollow cathode discharge method include examples using aluminum and silicon, and examples in which films of nitrogen compounds thereof are formed.

蒸発物質にアルミニウムを用いた場合、従来の装置では
前述のように電子ビームの照射された部分だけが選択的
に芸発し、放電開始より数分でルツボ底部に1員傷しは
じめるため、放電を中止しなければならなかった。しか
し、本発明による誘導加熱を併用した場合には、アルミ
ニウム全体が融解し安定した陰極放電が可能であった。
When aluminum is used as the evaporation material, in conventional equipment, only the part irradiated with the electron beam selectively emit radiation as described above, and the bottom of the crucible begins to be damaged within a few minutes from the start of the discharge, making it difficult to stop the discharge. I had to cancel it. However, when induction heating according to the present invention was used in combination, the entire aluminum was melted and stable cathode discharge was possible.

実施例ではアルミニウム多結晶膜と、反応ガスとして窒
素ガスを導入して窒化アルミニウム多結晶膜の被覆に成
功した。なお、析出物はXRDパターン、AES.IR
により同定を行った。
In the example, an aluminum polycrystalline film and an aluminum nitride polycrystalline film were successfully coated by introducing nitrogen gas as a reactive gas. In addition, the precipitate has an XRD pattern, AES. IR
Identification was performed by

蒸発物質にケイ素を用いた場合、従来の装置ではルツボ
内で融解するものの、不均一に加熱されるために突沸が
生し、?&滴が基体上に飛散して膜状の被覆は不可能で
あった。しかし、誘導加熱を併用した場合には突沸は生
じず、アモルファスのケイ素膜およびアモルファスの窒
化ケイ素膜の被覆に成功した。なお、析出物はAES.
SIMSにより同定を行った。
When using silicon as the evaporating substance, although it melts in the crucible using conventional equipment, bumping occurs due to uneven heating. & Droplets were scattered onto the substrate, making it impossible to form a film-like coating. However, when induction heating was used in combination, no bumping occurred, and we succeeded in coating amorphous silicon films and amorphous silicon nitride films. In addition, the precipitate is AES.
Identification was performed by SIMS.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、ホロー陰極放電と併用し
て蒸発物質を誘導加熱することで、従来のホロー陰極放
電方式イオンプレーティング装置では被膜の形成が極め
て困難であったアルミニウムやケイ素などの蒸発物質も
使用が可能となり、それらの窒素化合物の被膜の形成も
可能となった。
As described above, according to the present invention, by inductively heating the evaporated material in combination with hollow cathode discharge, it is possible to produce coatings on aluminum and silicon, which were extremely difficult to form with conventional hollow cathode discharge type ion plating equipment. It has become possible to use evaporated substances, and it has also become possible to form films of these nitrogen compounds.

さらに、誘導加熱を併用したことにより、従来のホロー
陰極放電方式における蒸発物質の融解、蒸発とプラズマ
化の2つの作用を別々に制御することが可能となり、成
膜速度の制御が容易になる等の種々の効果がある。
Furthermore, by using induction heating in combination, it becomes possible to separately control the two effects of melting, evaporation, and plasma formation of the evaporated substance in the conventional hollow cathode discharge method, making it easier to control the film formation rate, etc. There are various effects.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係わる実施例のイオンプレティング装
置の構造を示した断面図、第2図は従来のホロー陰極放
電方式のイオンブレーテイング装置の構造を示した断面
図である。 1・・・・・芸発物質 2a 3 ・ ・ 4 ・ ・ 5 ・ ・ 6 ・ ・ 7 ・ ・ 8 ・ ・ 9 ・ ・ 10・ ・ 2b・・・ルツボ ・ワーキングコイル ・・・ホロー陰極 ・・・基体 ・・・電子ビーム ・・・ハイアス ・・真空チャンハ ・・・反応ガスノズル ・・・ヒータ
FIG. 1 is a sectional view showing the structure of an ion plating apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing the structure of a conventional hollow cathode discharge type ion plating apparatus. 1... Artificial substance 2a 3 ・ ・ 4 ・ 5 ・ ・ 6 ・ ・ 7 ・ ・ 8 ・ ・ 9 ・ 10 ・ 2b... Crucible working coil... Hollow cathode... Substrate...Electron beam...Hiasu...Vacuum chamber...Reaction gas nozzle...Heater

Claims (1)

【特許請求の範囲】  ホロー陰極放電によりルツボ内の蒸発物質を融解、蒸
発、プラズマ化させ、基体上に被膜を形成するイオンプ
レーティング装置において、 前記ルツボに誘導加熱を併用して前記蒸発物質を融解、
蒸発させることを特徴とするイオンプレーティング装置
[Scope of Claims] An ion plating device that melts, evaporates, and turns evaporated material in a crucible into plasma using hollow cathode discharge to form a film on a substrate, wherein the crucible is heated in combination with induction heating to evaporate the evaporated material. melting,
An ion plating device characterized by evaporation.
JP1108190A 1990-01-19 1990-01-19 Ion plating device Pending JPH03215661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1108190A JPH03215661A (en) 1990-01-19 1990-01-19 Ion plating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1108190A JPH03215661A (en) 1990-01-19 1990-01-19 Ion plating device

Publications (1)

Publication Number Publication Date
JPH03215661A true JPH03215661A (en) 1991-09-20

Family

ID=11768029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1108190A Pending JPH03215661A (en) 1990-01-19 1990-01-19 Ion plating device

Country Status (1)

Country Link
JP (1) JPH03215661A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231826B1 (en) 1996-03-19 2001-05-15 Kawasaki Steel Corporation Process and apparatus for refining silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231826B1 (en) 1996-03-19 2001-05-15 Kawasaki Steel Corporation Process and apparatus for refining silicon

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