JPH03215829A - Production of liquid crystal element - Google Patents

Production of liquid crystal element

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Publication number
JPH03215829A
JPH03215829A JP1011390A JP1011390A JPH03215829A JP H03215829 A JPH03215829 A JP H03215829A JP 1011390 A JP1011390 A JP 1011390A JP 1011390 A JP1011390 A JP 1011390A JP H03215829 A JPH03215829 A JP H03215829A
Authority
JP
Japan
Prior art keywords
insulating film
liquid crystal
film material
crystal element
alignment film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1011390A
Other languages
Japanese (ja)
Inventor
Yasuyuki Watabe
渡部 泰之
Yuichi Masaki
裕一 正木
Masaaki Suzuki
正明 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP1011390A priority Critical patent/JPH03215829A/en
Publication of JPH03215829A publication Critical patent/JPH03215829A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は画像等の表示に用いられる液晶素子の製造方法
に関し、詳しくは電極基板上に形成される塗布・焼成タ
イプの無機酸化物絶縁膜と、さらにその上に形成される
有機高分子配向膜とを同時に焼成して得ることを特徴す
る液晶素子の製造方法に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a liquid crystal element used for displaying images, etc., and specifically relates to a coating/baking type inorganic oxide insulating film formed on an electrode substrate. The present invention relates to a method for producing a liquid crystal element, characterized in that the liquid crystal element is obtained by simultaneously firing the liquid crystal element and an organic polymer alignment film formed thereon.

[従来技術] 第1図に一般的な電界効果型液晶素子の断面図を示す。[Prior art] FIG. 1 shows a cross-sectional view of a general field-effect liquid crystal element.

第1図において1は透明基板、2は透明電極膜、3は金
属配線、4は液晶配向の耐久性の向上、電極上における
電気化学反応の抑制、電極の反射による見えの低下防止
等のための無機酸化物絶縁膜、5は液晶の配向を規制す
るための配向膜、6は液晶を示す。
In Figure 1, 1 is a transparent substrate, 2 is a transparent electrode film, 3 is metal wiring, and 4 is for improving the durability of liquid crystal alignment, suppressing electrochemical reactions on the electrodes, and preventing deterioration of visibility due to reflection of the electrodes. , an inorganic oxide insulating film, 5 an alignment film for controlling the alignment of liquid crystal, and 6 a liquid crystal.

一般に、第1図に示すような液晶素子は以下のような一
連の工程で製造される。すなわち、先ず一対の透明基板
1上に透明電極膜2と必要に応じて金属配線3を形成し
、さらに絶縁膜4、配向膜5を上記基板1の少なくとも
一方に順次形成する。そして得られた配向膜5に配向処
理を施した後に上記一対の基板を対向配置し、その間に
液晶6を充填して液晶素子を作製する。
Generally, a liquid crystal element as shown in FIG. 1 is manufactured through the following series of steps. That is, first, a transparent electrode film 2 and, if necessary, a metal wiring 3 are formed on a pair of transparent substrates 1, and then an insulating film 4 and an alignment film 5 are sequentially formed on at least one of the substrates 1. After the obtained alignment film 5 is subjected to an alignment treatment, the pair of substrates are placed facing each other, and liquid crystal 6 is filled between them to produce a liquid crystal element.

上記の製造方法における無機酸化物絶縁膜4の形成方法
としては、スパッタリング法と、絶縁膜材料を塗布して
焼成する方法とがある。当初は前者の方が電気絶縁性に
優れた絶縁膜が得られたので広く用いられていた。しか
し、かかる方法は真空中で基板を350℃程度まで加熱
する必要があり、生産性が悪く、しかも高価な装置が必
要であるので、素子の製造コスト低減の障害となってい
た。
Methods for forming the inorganic oxide insulating film 4 in the above manufacturing method include a sputtering method and a method of applying and baking an insulating film material. Initially, the former method was widely used because it produced an insulating film with superior electrical insulation properties. However, this method requires heating the substrate to about 350° C. in a vacuum, resulting in poor productivity and requiring expensive equipment, which has been an obstacle to reducing device manufacturing costs.

ところが近年になって、東京応化工業■製MOF−In
kシリーズ、日産化学■製NHCシリーズ等の優れた塗
布・焼成タイプの絶縁膜材料が開発され、しかも日本写
真印刷■製オングストローマー等の絶縁膜形成に適した
印刷機器が開発されたため、スパッタリング法で形成し
た絶縁膜に劣らない充分な性能の無機酸化物絶縁膜が後
者の方法で、しかも200〜300℃程度の加熱条件で
得られるようになった。その結果、絶縁膜材料を電極基
板上に印刷法等によって塗布して焼成することによって
無機酸化物絶縁膜を基板上に形成する方法が広く行なわ
れるようになり、絶縁膜形成工程の生産性は著しく向上
された。
However, in recent years, MOF-In manufactured by Tokyo Ohka Kogyo ■
With the development of excellent coating and firing type insulating film materials such as the K series and the NHC series manufactured by Nissan Chemical, and the development of printing equipment suitable for forming insulating films such as the Angstromer manufactured by Nissha Printing, sputtering It has now become possible to obtain an inorganic oxide insulating film with sufficient performance comparable to insulating films formed by the latter method, and under heating conditions of about 200 to 300°C. As a result, a method of forming an inorganic oxide insulating film on a substrate by applying an insulating film material onto an electrode substrate by a printing method or the like and baking it has become widely used, and the productivity of the insulating film forming process has improved. Significantly improved.

[発明が解決しようとする課題] しかしながら、上述のように絶縁膜を塗布・焼成によっ
て形成するようにした場合、従来は、先ず無機酸化物絶
縁膜を基板上に形成した後、得られた絶縁膜上に配向膜
材料を塗布して再度焼成することによって配向膜を形成
していたため、高温処理(焼成)工程を2回行なう必要
があった。そのため製造工程が煩雑となり、特にオンラ
イン化するにあたって不都合で、製造効率並びに製造コ
ストの低減も充分に達成されなかった。
[Problems to be Solved by the Invention] However, when an insulating film is formed by coating and baking as described above, conventionally, an inorganic oxide insulating film is first formed on a substrate, and then the obtained insulating film is Since the alignment film was formed by applying the alignment film material onto the film and baking it again, it was necessary to perform the high temperature treatment (firing) process twice. Therefore, the manufacturing process becomes complicated, which is particularly inconvenient when going online, and manufacturing efficiency and manufacturing cost reductions are not sufficiently achieved.

本発明の目的は、上記従来技術の課題に鑑み、液晶素子
の製造方法において、絶縁膜および配向膜の形成工程を
簡略化し、製造効率および製造コストの低減を図ること
にある。
SUMMARY OF THE INVENTION In view of the problems of the prior art described above, an object of the present invention is to simplify the steps of forming an insulating film and an alignment film in a method of manufacturing a liquid crystal element, thereby reducing manufacturing efficiency and manufacturing costs.

[課題を解決するための手段および作用]本発明者らは
鋭意研究の結果、無機酸化物絶縁膜を得る際の焼成処理
と配向膜を得る際の焼成処理とを同時に行なうことによ
って上記課題が解決されることを見出し、本発明に到達
した。
[Means and effects for solving the problem] As a result of intensive research, the present inventors have found that the above problem can be solved by simultaneously performing the firing process for obtaining the inorganic oxide insulating film and the firing process for obtaining the alignment film. We have found a solution to this problem and have arrived at the present invention.

すなわち、本発明の液晶素子の製造方法にあっては、液
晶に電圧を印加して駆動するための電極を有する基板上
に無機酸化物絶縁膜および有機高分子配向膜を形成する
に際し、該基板上に絶縁膜材料を先ず塗布し、次いで未
焼成の該絶縁膜材料上に配向膜材料を塗布した後、該絶
縁膜材料および該配向膜材料を同時に加熱焼成するよう
にした。
That is, in the method for manufacturing a liquid crystal element of the present invention, when forming an inorganic oxide insulating film and an organic polymer alignment film on a substrate having an electrode for driving the liquid crystal by applying a voltage to the substrate, An insulating film material was first applied thereon, and then an alignment film material was applied on the unfired insulating film material, and then the insulating film material and the alignment film material were simultaneously heated and fired.

本発明においては、絶縁膜材料並びに配向膜材料は共に
従来用いられたものが使用でき、それらの塗布は印刷法
等で行なわれる。また、加熱焼成条件は、充分な性能の
絶縁膜および配向膜が得られるように、用いる絶縁膜材
料および配向膜材料に応じて適宜設定される。
In the present invention, conventionally used insulating film materials and alignment film materials can be used, and their coating is performed by a printing method or the like. Further, the heating and baking conditions are appropriately set according to the insulating film material and alignment film material used so that an insulating film and alignment film with sufficient performance can be obtained.

さらに、本発明の製造方法では、配向膜材料な塗布する
前に絶縁膜材料を乾燥し、焼成に先立って紫外線照射I
A理、すなわち低圧水銀ランプ等を用いてぬれ性改善の
為の表面処理を施しておくと、配向膜材料の塗布が容易
となり、さらにそれと共に、低圧水銀ランプの紫外線エ
ネルギーによって性能の良い絶縁膜が得られる傾向にあ
る。この際の紫外線照射量は50mJ/cm2以上で、
好ましくは0. 5〜l O J/cm’である。
Furthermore, in the manufacturing method of the present invention, the insulating film material is dried before being coated with the alignment film material, and the insulating film material is irradiated with ultraviolet light before baking.
A. In other words, if the surface is treated to improve wettability using a low-pressure mercury lamp, etc., it will be easier to apply the alignment film material, and at the same time, the ultraviolet energy of the low-pressure mercury lamp will create a high-performance insulating film. tends to be obtained. The amount of ultraviolet irradiation at this time is 50 mJ/cm2 or more,
Preferably 0. 5 to lOJ/cm'.

[作用] 本発明の製造方法においては、無機酸化物絶縁膜を得る
際の焼成処理と配向膜を得る際の焼成処理とを同時に行
なうようにしたため、煩雑な高温処理工程が一回で済み
、液晶素子の製造工程が大幅に簡略化され、従来と同程
度の性能の液晶素子がより効率よく生産される。また、
本発明の製造方法によると、加熱コスト等の操業コスト
が大幅に削減されるので、素子の製造コストが低減され
る。
[Function] In the manufacturing method of the present invention, the firing treatment for obtaining the inorganic oxide insulating film and the firing treatment for obtaining the alignment film are performed simultaneously, so that the complicated high temperature treatment step is only performed once. The manufacturing process for liquid crystal elements is greatly simplified, and liquid crystal elements with the same performance as conventional ones can be produced more efficiently. Also,
According to the manufacturing method of the present invention, operating costs such as heating costs are significantly reduced, so the manufacturing cost of the element is reduced.

[実施例コ 実施例1および比較例1 透明導電膜で液晶素子用のパターンを形成した電極基板
上に下記の絶縁膜材料を下記の印刷条件で塗布した。
[Example 1 and Comparative Example 1 The following insulating film material was applied under the following printing conditions onto an electrode substrate on which a pattern for a liquid crystal element was formed using a transparent conductive film.

(絶縁膜材料) 成分・・・有機チタン化合物と有機ケイ素化合物との混
合溶液(金属分濃度=10重量%、有機ヂタン化合物と
有機ケイ素化合物との混合比=t : i) 粘度・・・50cp(25℃) 製造元・・・東京応化工業■ 商品名−MOF,Ti−St−ink (印刷条件) 使用機器・・・日本写真印刷■製オングストローマー展
色板深さ・・・12ミクロン 凹凸比・・・凹:凸=60ミクロン:40ミクロン印刷
版押し込み量・・・0.15ミリ 次に、絶縁膜材料を塗布した電極基板を、実施例1にお
いては150℃に30分維持して絶縁膜材料を乾燥し、
さらにオゾン処理(低圧水銀ランプ使用、1.OJ/c
m2照射)を施し、一方、比較例1においては300℃
に60分維持して絶縁膜材料を焼成した。
(Insulating film material) Ingredients: Mixed solution of organic titanium compound and organic silicon compound (metal concentration = 10% by weight, mixing ratio of organic titanium compound and organic silicon compound = t:i) Viscosity: 50 cp (25℃) Manufacturer: Tokyo Ohka Kogyo ■ Product name: MOF, Ti-St-ink (Printing conditions) Equipment used: Nissha Printing ■ Angstromer color plate Depth: 12 micron unevenness Ratio: concave: convex = 60 microns: 40 microns Amount of printing plate depression: 0.15 mm Next, in Example 1, the electrode substrate coated with the insulating film material was maintained at 150°C for 30 minutes. Dry the insulation film material,
Furthermore, ozone treatment (using a low-pressure mercury lamp, 1.OJ/c
m2 irradiation), while in Comparative Example 1, 300°C
The insulating film material was fired for 60 minutes.

続いて、これらの電極基板にそれぞれ下記の配向膜材料
を下記の印刷条件で塗布した。
Subsequently, the following alignment film materials were applied to these electrode substrates under the following printing conditions.

(配向膜材料) 成分・・・ポリイミド系 (樹脂分濃度は3重量%) 製造元・・・東レ■ 商品名・・・LP−64 (印刷条件) 使用機器・・・日本写真印刷■製オングストローマー展
色板深さ・・・5ミクロン 凹凸比・・・凹:凸=60ミクロン:40ミクロン印刷
版押し込み量・・・0.15ミリ 次いで、配向膜材料を塗布した電極基板を、実施例1に
おいては300℃に60分維持して絶縁膜材料および配
向膜材料を焼成し、一方、比較例1においては270℃
に60分維持して絶縁膜材判を焼成して、絶縁膜と配向
膜を有する電極基板をそれぞれ得た。
(Alignment film material) Ingredients: Polyimide (resin concentration: 3% by weight) Manufacturer: Toray ■ Product name: LP-64 (Printing conditions) Equipment used: Angstraw manufactured by Nissha Printing ■ Color plate depth: 5 microns Roughness ratio: concave: convex = 60 microns: 40 microns Printing plate indentation amount: 0.15 mm Next, the electrode substrate coated with the alignment film material was coated with the electrode substrate coated with the alignment film material. In Comparative Example 1, the insulating film material and alignment film material were fired at 300°C for 60 minutes, while in Comparative Example 1, the temperature was maintained at 300°C for 60 minutes.
The insulating film material was fired for 60 minutes to obtain electrode substrates each having an insulating film and an alignment film.

実施例1、比較例1いずれも、得られた膜厚は絶縁膜が
1000±150人、配向膜が100±20人であった
In both Example 1 and Comparative Example 1, the obtained film thicknesses were 1000±150 for the insulating film and 100±20 for the alignment film.

絶縁膜および配向膜を形成した電極基板各々について絶
縁破壊電圧(BDV)を第2図に示す装置を用いて下記
の条件で測定した結果、実施例1で得られた膜は50■
(標準偏差σ=7)、比較例1で得られた膜は49v(
σ=8)であり、ほぼ同等の性能を有するものであった
The dielectric breakdown voltage (BDV) of each of the electrode substrates on which the insulating film and alignment film were formed was measured using the apparatus shown in FIG. 2 under the following conditions. As a result, the film obtained in Example 1 had a
(standard deviation σ = 7), and the film obtained in Comparative Example 1 was 49v (
σ=8), and had almost the same performance.

第2図において、7はタングステンカーバイド製で尖端
のRが0.1ミリのブローバ、8はプッシュ・ブルゲー
ジ、9はサンプル、10は電圧可変電源、11は電流計
を示す。
In FIG. 2, numeral 7 indicates a blow bar made of tungsten carbide with a radius of 0.1 mm at the tip, 8 a push bull gauge, 9 a sample, 10 a variable voltage power source, and 11 an ammeter.

(BVD測定条件) 荷重・・・10g 次に、上記で得られた各電極基板に配向処理を施した後
、1.3ミクロンギャップの液晶パネルを各々作製した
。そしてそれらの中に自発分極(ps)が9.6nC/
cm2のSm*C液晶を封入して液晶素子を作製し、各
々の液晶素子について周波数を固定して電圧を変化させ
ながら第3図に示す駆動波形で駆動マージンの温度特性
を測定した。
(BVD measurement conditions) Load: 10 g Next, each of the electrode substrates obtained above was subjected to alignment treatment, and then liquid crystal panels with a gap of 1.3 microns were each produced. And among them, spontaneous polarization (ps) is 9.6nC/
A liquid crystal element was prepared by sealing a cm2 of Sm*C liquid crystal, and the temperature characteristics of the drive margin were measured for each liquid crystal element using the drive waveform shown in FIG. 3 while fixing the frequency and varying the voltage.

第3図において、Cは走査電圧波形、S1は白(または
黒)書き込みの信号電圧波形、S2は黒(または白)書
き込みの信号電圧波形である。
In FIG. 3, C is a scanning voltage waveform, S1 is a signal voltage waveform for white (or black) writing, and S2 is a signal voltage waveform for black (or white) writing.

その結果、実施例1で得られた液晶素子は比較例1で得
られたものと同様に駆動マージンは充分に広いものであ
フた。
As a result, the liquid crystal element obtained in Example 1 had a sufficiently wide driving margin, similar to that obtained in Comparative Example 1.

また、実施例1で得られた液晶素子中の液晶配向状態は
比較例1で得られたものと同様に全面的に均一であった
Further, the liquid crystal alignment state in the liquid crystal element obtained in Example 1 was uniform throughout the entire surface, similar to that obtained in Comparative Example 1.

このように、実施例1の場合は焼成処理が一口で済む分
、加熱コスト、設備コスト等の製造コストが少なくて済
み、かつ得られる液晶素子は充分な性能を有するもので
あった。
As described above, in the case of Example 1, manufacturing costs such as heating cost and equipment cost were low because only one firing process was required, and the obtained liquid crystal element had sufficient performance.

施例2およびヒ 例2 絶縁膜材料を下記のものに変更し、かつ実施例2にあっ
ては絶縁膜材料の乾燥条件を150℃で30分、絶縁膜
材料および配向膜材料の焼成条件を200℃で60分と
し、一方比較例2にあっては絶縁膜材料の焼成条件を2
00℃で60分、配向膜材料の焼成条件を200℃で6
0分とした以外は実施例2は実施例1、比較例2は比較
例1とそれぞれ同様にして絶縁膜と配向膜を有する電極
基板を得た。
Example 2 and Example 2 The insulating film material was changed to the following, and in Example 2, the drying conditions for the insulating film material were 150°C for 30 minutes, and the baking conditions for the insulating film material and alignment film material were changed. The firing conditions were 200°C for 60 minutes, while in Comparative Example 2, the firing conditions for the insulating film material were 2.
00℃ for 60 minutes, and the alignment film material firing conditions were 200℃ for 60 minutes.
An electrode substrate having an insulating film and an alignment film was obtained in the same manner as in Example 1 for Example 2 and in Comparative Example 1 for Comparative Example 2 except that the time was 0 minutes.

(絶縁膜材料) 成分・・・有機アルミ化合物と有機ケイ素化合物との混
合溶液 粘度・・・20cp (25℃) 製造元・・・日産化学■ 商品名・・・NHC−A−20−1 41 1 実施例2、比較例2いずれも、得られた膜厚は絶縁膜が
1100±150人、配向膜が100±20人であフた
(Insulating film material) Ingredients: Mixed solution viscosity of organic aluminum compound and organic silicon compound: 20 cp (25°C) Manufacturer: Nissan Chemical ■ Product name: NHC-A-20-1 41 1 In both Example 2 and Comparative Example 2, the obtained film thicknesses were 1100±150 for the insulating film and 100±20 for the alignment film.

上記で得られた電極基板各々について絶縁破壊電圧を実
施例1と同様にして測定したところ、実施例2で得られ
た膜は45V(σ=3)、比較例2で得られた膜は46
v(σ=3)であり、ほぼ同等の性能を有するものであ
った。
When the dielectric breakdown voltage of each of the electrode substrates obtained above was measured in the same manner as in Example 1, the film obtained in Example 2 was 45 V (σ = 3), and the film obtained in Comparative Example 2 was 46 V.
v (σ=3), and had almost the same performance.

次に、上記で得られた各電極基板を用いて実施例1と同
様にして液晶素子を作製し、各々の液晶素子について駆
動マージンの温度特性を測定した。実施例2で得られた
液晶素子は比較例2で得られたものと同様に駆動マージ
ンは充分に広いものであった。
Next, liquid crystal elements were produced in the same manner as in Example 1 using each of the electrode substrates obtained above, and the temperature characteristics of the drive margin of each liquid crystal element were measured. The liquid crystal element obtained in Example 2 had a sufficiently wide driving margin, similar to that obtained in Comparative Example 2.

また、実施例2で得られた液晶素子中の液晶配向状態は
比較例2で得られたものと同様に全面的に均一であった
Furthermore, the liquid crystal alignment state in the liquid crystal element obtained in Example 2 was uniform throughout the entire surface, similar to that obtained in Comparative Example 2.

実施例2の場合も実施例1と同様に製造工程が簡略化さ
れかつコストが低減され、しかも充分な性能を有する液
晶素子が得られた。
In the case of Example 2, as in Example 1, the manufacturing process was simplified, the cost was reduced, and a liquid crystal element with sufficient performance was obtained.

1 2 [発明の効果] 以上説明したように、本発明によると、塗布・焼成タイ
プの無機酸化物絶縁膜の焼成を、その上に形成される配
向膜の焼成と同時に行なうようにしたため、液晶素子の
製造工程は従来より大幅に簡略化され、充分な性能を有
する液晶素子をより効率よく生産できるようになり、製
造コストも大幅に低減される。
1 2 [Effects of the Invention] As explained above, according to the present invention, since the coating/baking type inorganic oxide insulating film is fired at the same time as the alignment film formed thereon, the liquid crystal The manufacturing process of the device is significantly simplified compared to the conventional method, and liquid crystal devices with sufficient performance can be produced more efficiently, and manufacturing costs are also significantly reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は一般的な電界効果型液晶素子の断面図であり、 第2図は本発明の一実施例において使用された絶縁破壊
電圧測定装置の模式図であり、第3図は本発明の一実施
例において駆動マージンの温度特性を測定する際の駆動
波形を示す図である。 1:透明基板、 1 3 :透明電極膜、 二金属配線、 :絶縁膜、 :配向膜、 ;液晶、 :ブローバ、 :プッシュ・ブルゲージ、 :サンプル、 :電圧可変電源、 :電流計、 :走査電圧波形、 :白(または黒)書き込みの信号電圧波形、:黒(また
は白)書き込みの信号電圧波形。
FIG. 1 is a cross-sectional view of a general field-effect liquid crystal element, FIG. 2 is a schematic diagram of a dielectric breakdown voltage measuring device used in an embodiment of the present invention, and FIG. FIG. 7 is a diagram showing drive waveforms when measuring temperature characteristics of a drive margin in one embodiment. 1: Transparent substrate, 1 3: Transparent electrode film, bimetallic wiring, : Insulating film, : Alignment film, : Liquid crystal, : Blowba, : Push bull gauge, : Sample, : Voltage variable power supply, : Ammeter, : Scanning voltage Waveform, : Signal voltage waveform for white (or black) writing, : Signal voltage waveform for black (or white) writing.

Claims (1)

【特許請求の範囲】 1、液晶に電圧を印加して駆動するための電極を有する
基板上に無機酸化物絶縁膜および有機高分子配向膜を形
成するに際し、該基板上に絶縁膜材料を先ず塗布し、次
いで未焼成の該絶縁膜材料上に配向膜材料を塗布した後
、該絶縁膜材料および該配向膜材料を同時に加熱焼成す
ることを特徴とする液晶素子の製造方法。 2、前記未焼成の絶縁膜材料に紫外線照射処理を施した
後に配向膜材料を塗布することを特徴とする、請求項1
に記載の液晶素子の製造方法。
[Claims] 1. When forming an inorganic oxide insulating film and an organic polymer alignment film on a substrate having electrodes for driving liquid crystal by applying a voltage, an insulating film material is first applied on the substrate. 1. A method for manufacturing a liquid crystal element, which comprises applying an alignment film material on the unfired insulating film material, and then heating and baking the insulating film material and the alignment film material at the same time. 2. Claim 1, characterized in that an alignment film material is applied after the unfired insulating film material is subjected to ultraviolet irradiation treatment.
The method for manufacturing a liquid crystal element described in .
JP1011390A 1990-01-19 1990-01-19 Production of liquid crystal element Pending JPH03215829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1011390A JPH03215829A (en) 1990-01-19 1990-01-19 Production of liquid crystal element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1011390A JPH03215829A (en) 1990-01-19 1990-01-19 Production of liquid crystal element

Publications (1)

Publication Number Publication Date
JPH03215829A true JPH03215829A (en) 1991-09-20

Family

ID=11741259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1011390A Pending JPH03215829A (en) 1990-01-19 1990-01-19 Production of liquid crystal element

Country Status (1)

Country Link
JP (1) JPH03215829A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893688B2 (en) 2000-09-06 2005-05-17 Seiko Epson Corporation Method and apparatus for fabricating electro-optical device and method and apparatus for fabricating liquid crystal panel
KR100704510B1 (en) * 2001-02-12 2007-04-09 엘지.필립스 엘시디 주식회사 Lower substrate for transverse electric field type liquid crystal display device and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893688B2 (en) 2000-09-06 2005-05-17 Seiko Epson Corporation Method and apparatus for fabricating electro-optical device and method and apparatus for fabricating liquid crystal panel
KR100704510B1 (en) * 2001-02-12 2007-04-09 엘지.필립스 엘시디 주식회사 Lower substrate for transverse electric field type liquid crystal display device and manufacturing method thereof

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