JPH03218078A - Optical sensor - Google Patents
Optical sensorInfo
- Publication number
- JPH03218078A JPH03218078A JP2014205A JP1420590A JPH03218078A JP H03218078 A JPH03218078 A JP H03218078A JP 2014205 A JP2014205 A JP 2014205A JP 1420590 A JP1420590 A JP 1420590A JP H03218078 A JPH03218078 A JP H03218078A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- film
- grow
- optical sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 229910006990 Si1-xGex Inorganic materials 0.000 abstract 2
- 229910007020 Si1−xGex Inorganic materials 0.000 abstract 2
- 229910006939 Si0.5Ge0.5 Inorganic materials 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 108091008695 photoreceptors Proteins 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は絶縁物基板上に半導体層を設けた構造（以下Ｓ
ＯＩ構造と称す）において、その半導体層を受光層とし
たＳ Ｏ Ｉ ＦＲ造の光センサに関する。Detailed description of the invention (a) Industrial application field The present invention relates to a structure in which a semiconductor layer is provided on an insulating substrate (hereinafter referred to as S
The present invention relates to an optical sensor of SOI FR structure in which the semiconductor layer is used as a light-receiving layer (referred to as OI structure).
（口）従来の技術
５０１１１造の光センサを３次元回路素子の最上層に作
製することは素子の多機能化を図る上で重要な技術であ
る。広瀬氏らは． １ ９ ８ ５ Ｓｙｍｐｏｓｉｕ
ｍｏｎ ＶＬＳＩ Ｔｅｃｈｎｏｌｏｇｙ．Ｄｉｇｅｓ
ｔ ｐ．３４−ｐ．３５に記載のごとく、Ｓｉｎｓ膜上
にレーザ再結晶化法で成長した単結晶Ｓｉ膜にＰＮフ才
トダイオードを形成した。(Example) Conventional technology 50111 Fabricating an optical sensor on the top layer of a three-dimensional circuit element is an important technique for making the element multi-functional. Hirose et al. 1 9 8 5 Symposium
mon VLSI Technology. Diges
tp. 34-p. As described in No. 35, a PN power diode was formed in a single crystal Si film grown on a Sins film by a laser recrystallization method.
（ハ）発明が解決しようとする課題
ところが、この構造では、半導体膜であるＳｉのバンド
ギャップが大きいため、長波長光の感度が悪く、厚さ７
０００人程度の薄いＳｉ膜では赤色光を検出できず、カ
ラーセンサとして使用することができない。(c) Problems to be Solved by the Invention However, in this structure, since the bandgap of Si, which is a semiconductor film, is large, the sensitivity to long wavelength light is poor, and the thickness is 7.
A thin Si film of about 1,000 yen cannot detect red light and cannot be used as a color sensor.
本発明は斯る点に鑑みてなされたものである。The present invention has been made in view of this point.
（二）課題を解決するための手段
本発明による光センサは、５０１構造の光センサにおい
て、その受光層にＳ＋ １ −ｘ Ｇ ｅ ＊／ Ｓ
＋超格子層を用いたことを特徴とする。(2) Means for Solving the Problems The optical sensor according to the present invention has a 501 structure, and has S+ 1 -x G e */S in its light-receiving layer.
+ It is characterized by the use of a superlattice layer.
更に本発明による光センサは、前記超格子層が、そのは
）゛全層に亘って格子歪を含んでいることを特徴とする
。Furthermore, the optical sensor according to the present invention is characterized in that the superlattice layer contains lattice strain throughout the entire layer.
（ホ）作 用
５ ｉ ．．Ｇ ｅ ，／ Ｓ ｉ超格子の組成比Ｘを
制御することで、そのバンドギャップをＳｉの１．１
ｅＶからＧｅの０．６ ６ ｅ Ｖまで小さくすること
ができ、その結果、長波長光の感度が向上する。更には
、超格子の結晶格子を歪ませることで、そのバンドギャ
ップは０．６ｅＶまで小さくなり、長波長光感度が一層
向上する。(e) Effect 5 i. ．． By controlling the composition ratio X of the G e ,/S i superlattice, its band gap can be adjusted to 1.1 of that of Si.
eV to 0.6 6 eV of Ge, and as a result, the sensitivity to long wavelength light improves. Furthermore, by distorting the crystal lattice of the superlattice, its band gap can be reduced to 0.6 eV, further improving long wavelength light sensitivity.
（へ）実施例
第１図は本発明実施例の光センサを示すが、説明の便宜
上、第２図乃至第６図に従い、その製造工程から説明す
る。(F) Embodiment FIG. 1 shows an optical sensor according to an embodiment of the present invention, but for convenience of explanation, the manufacturing process thereof will be explained with reference to FIGS. 2 to 6.
第２図に示す工程において、超高真空中にて７５０℃に
加熱保持した（１１０２）面を主面とするサファイアか
らなる絶縁物基板（１）表面にＳｉ分子ＩＩｉＩ（２
）をＩ Ｘ １ ０ ”ａｔｏｍｓ／ｃｍ″’ｓの強度
で３０分間照射し、表面の清浄化を行う。In the process shown in Figure 2, Si molecules IIIiI (2
) at an intensity of I x 10 "atoms/cm"'s for 30 minutes to clean the surface.
第３図に示す工程において、絶縁物基板（１）を８００
℃に昇温し、その上に膜厚０．５μｍのＳｉ膜（３）を
分子線エビタキシャル（ＭＢＥ）成長する。このＳｉ膜
（３）は、Ｓ ｒ １ − Ｈ Ｇ ｅ ＊超格子層を
成長するに当り、結晶性の良好な下地を提供するだめの
バッファ層である。In the process shown in FIG. 3, the insulator substrate (1) is
The temperature is raised to .degree. C., and a 0.5 .mu.m thick Si film (3) is grown thereon by molecular beam epitaxial (MBE). This Si film (3) is a buffer layer that provides a base with good crystallinity when growing the Sr1-HGe* superlattice layer.
第４図に示す工程において、ｓ ｉｌ−１１Ｇ ｅ ｔ
／ Ｓｉ超格子層の成長を行う。今Ｘ＝０．５すなわち
Ｓ ｉ６．ｓＧ ｅ ｏ，ｓ／ Ｓ ’超格子層を成長
するとして、結晶格子を歪んだままで保持するためにＳ
ｉ。ＩＧｅｏ，ｓ膜の厚さを８０人以下に抑える必要が
ある。これ以上の膜厚にすると欠陥が導入されやすくな
るためである。そこで、Ｓｉ膜（３）上にＳ１３ｓＧｅ
ｏ．ｓ膜（４）を膜厚８０人にてＭＢＥ成長する。この
時の基板温度は５５０℃であり、Ｓｉ（５）はＥ型電子
銃で、Ｇｅ（６）はクヌードセンセルでそれぞれ分子線
を発生させた。In the process shown in FIG. 4, s il-11G et
/Grow a Si superlattice layer. Now X=0.5 or S i6. sG e o,s/S' When growing a superlattice layer, S is added to keep the crystal lattice strained.
i. It is necessary to suppress the thickness of the IGeo,s film to 80 or less. This is because defects are more likely to be introduced if the film thickness is greater than this. Therefore, S13sGe was added on the Si film (3).
o. The s film (4) was grown by MBE to a film thickness of 80 ml. The substrate temperature at this time was 550° C., and molecular beams were generated for Si (5) using an E-type electron gun and for Ge (6) using a Knudsen cell.
第５図に示す工程において膜厚８０人のＳｉ膜（７）を
基板温度５５０℃でＳ ｒ ６． ＠Ｇ ｅ ＠１膜（
４）上にＭＢＥ成長する。In the process shown in FIG. 5, a Si film (7) with a thickness of 80% is formed by S r 6. at a substrate temperature of 550°C. @G e @1 membrane (
4) MBE grows on top.
第６図に示す工程では、第４図及び第５図に示す各工程
を繰り返し、Ｓｉ膜（ ７ ）／ Ｓ ＋ ｏ．ｓ Ｇ
ｅ。．，膜（４）を１３周期成長させて、膜厚２０８
０人のＳ ｌ ｏ．ｓＧ ｅ ｓ． ｓ／ Ｓ ｊ超格
子層（８）を形成する。In the step shown in FIG. 6, the steps shown in FIGS. 4 and 5 are repeated to form a Si film (7)/S+o. s G
e. ．． , the film (4) was grown 13 times to a film thickness of 208.
0 S lo. sG e s. s/S j superlattice layer (8) is formed.
最終工程としての第１図に示す工程において、このＳ
ｉ ｃｓＧｅｏ，ｉ／Ｓ ｉ超格子層（８）に、Ｐ型領
域（９）としてＢ （１０）を、Ｎ型領域（１１）とし
てＡｓ （１２）を、１０６ｍ幅のＩ型領域（１３）を
挟んでそれぞれイオン注入することによ９、ＰＩＮ接合
を持ったＳＯＩ構造の光センサ（１４）を完成する。In the process shown in Figure 1 as the final process, this S
i csGeo, i/S i superlattice layer (8), B (10) as P type region (9), As (12) as N type region (11), 106 m wide I type region (13) By performing ion implantation on each side, an SOI-structured optical sensor (14) with a PIN junction is completed.
本発明の光センサ（１４）における赤色光（波長６５０
０人）の吸収係数は３ Ｘ Ｉ Ｑ ’ｃｍ−’以上と
なり、Ｓｉの３ Ｘ Ｉ Ｑ ’ｅｍ−’に比べて１桁
大きな値である。Red light (wavelength 650) in the optical sensor (14) of the present invention
The absorption coefficient for Si (0 persons) is 3 X I Q 'cm-' or more, which is an order of magnitude larger than that of Si (3 X I Q 'em-').
ところでＰＩＮフォトダイオードにおける光電流Ｊは
Ｊ＝ｑ・Φ。（１−ｅ−”“）
で表わされる。この時、ｑは電荷、Φ。は光強度、ａは
吸収係数、Ｗは膜厚である。By the way, the photocurrent J in the PIN photodiode is J=q·Φ. (1-e-""). At this time, q is the charge and Φ. is the light intensity, a is the absorption coefficient, and W is the film thickness.
したがって本発明におけるｓｏ ｘ＃Ｍ造の光センサ（
１４）の赤色光（波長６５００人）照射時の光電流Ｊ．
目． ｓＧ ｅ ６ ！／ Ｊ ｓ＋はＪＳ＋ｓ， ｓ
Ｇｅｓ． ｉ／Ｓｌ
−ＪＳｉ（１０４０ス）”ＪＳｉ＠，ｓＧｅａ，ｌ（１
０４０ｔ）一ｑ・φ，・（１−ｅ一“）＋ｑ・Φ．・（
１−ｅ−’）一ｏ． ２９９Ｘｑ・φ。となる。Therefore, the optical sensor (
14) Photocurrent when irradiated with red light (6500 wavelength) J.
eye. sGe6! / J s+ is JS+s, s
Ges. i/Sl -JSi(1040s)"JSi@,sGea,l(1
040t) 1q・φ,・(1−e1“)+q・φ.・(
1-e-') 1o. 299Xq・φ. becomes.
但し、ａ ＝３ＸｌＯ”（１．０４Ｘ１０−″）β＝３
Ｘ１０’・（１．０４Ｘ１０−’）一方、受光領域とし
てＳ １ ａ． ｓ Ｇ ｅ ＠， ６／ Ｓ ｒ超格
子層（８）のかわりにＳｉ膜のみを用いた場合の光電流
Ｊ ５１は、
ＪｓＩ＝＝ＪｓＩ（２０８０Ａ）＝ｑ・φ＃−（１−ｅ
−’）＝０． ０５８Ｘｑ・φ．である。However, a = 3XlO"(1.04X10-") β = 3
X10'・(1.04X10-') On the other hand, S 1 a. The photocurrent J51 when only the Si film is used instead of the Sr superlattice layer (8) is JsI==JsI(2080A)=q・φ#−(1−e
-')=0. 058Xq・φ. It is.
但し、Ｔ ＝３Ｘ１０”・（２．０８Ｘ１０−’）した
がって、本発明の光センサ（ｌ４）は、従来のＳｉｌｌ
々のみの場合に比べて
Ｊｓ＋ｏ． ｓｃａｎ． ｓ／ｓ＋／Ｊｓｌ＝０．２９
９Ｘｑ・φｍｌ０． ０５８Ｘｑ−Φ。However, T = 3X10"(2.08X10-') Therefore, the optical sensor (l4) of the present invention is different from the conventional Sill
Js+o. scan. s/s+/Jsl=0.29
9Xq・φml0. 058Xq-Φ.
一５、１６ となり，
５倍以」二の光電流を赤色光（波長６５００人）におい
て得ることができる。15,16, and more than 5 times as much photocurrent can be obtained in red light (wavelength 6500).
（ト）発明の効果
本発明によれば、ＳＯＩ構造の光センサにおいて、長波
長光の感度向が向上し、赤色光の検出が可能となる。(g) Effects of the Invention According to the present invention, in an optical sensor having an SOI structure, the sensitivity to long wavelength light is improved and red light can be detected.
第１図は本発明実施例による光センサの断面図、第２図
乃至第６図は前記実施例を製造するための工程別断面図
である。FIG. 1 is a sectional view of an optical sensor according to an embodiment of the present invention, and FIGS. 2 to 6 are sectional views of each process for manufacturing the embodiment.
Claims (2)
＿ｘＧｅ＿ｘ／Ｓｉ超格子層を設けたことを特徴とする
光センサ。(1) Si_1_- as a semiconductor light-receiving layer on an insulating substrate
An optical sensor characterized by providing a _xGe_x/Si superlattice layer.
、そのほゞ全層に亘って格子歪を含んでいることを特徴
とする光センサ。(2) The optical sensor according to claim 1, wherein the superlattice layer contains lattice strain over substantially the entire layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014205A JPH03218078A (en) | 1990-01-23 | 1990-01-23 | Optical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014205A JPH03218078A (en) | 1990-01-23 | 1990-01-23 | Optical sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03218078A true JPH03218078A (en) | 1991-09-25 |
Family
ID=11854608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014205A Pending JPH03218078A (en) | 1990-01-23 | 1990-01-23 | Optical sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03218078A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336901A (en) * | 1991-08-05 | 1994-08-09 | Fujitsu Limited | Composite semiconductor structure for reducing scattering of carriers by optical phonons and a semiconductor device that uses such a composite semiconductor structure |
-
1990
- 1990-01-23 JP JP2014205A patent/JPH03218078A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336901A (en) * | 1991-08-05 | 1994-08-09 | Fujitsu Limited | Composite semiconductor structure for reducing scattering of carriers by optical phonons and a semiconductor device that uses such a composite semiconductor structure |
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