JPH03219649A - Substrate for metal protrusion formation and its manufacture - Google Patents

Substrate for metal protrusion formation and its manufacture

Info

Publication number
JPH03219649A
JPH03219649A JP2015460A JP1546090A JPH03219649A JP H03219649 A JPH03219649 A JP H03219649A JP 2015460 A JP2015460 A JP 2015460A JP 1546090 A JP1546090 A JP 1546090A JP H03219649 A JPH03219649 A JP H03219649A
Authority
JP
Japan
Prior art keywords
resin layer
photosensitive resin
film
light
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015460A
Other languages
Japanese (ja)
Inventor
Tetsuo Kawakita
哲郎 河北
Kenzo Hatada
畑田 賢造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2015460A priority Critical patent/JPH03219649A/en
Publication of JPH03219649A publication Critical patent/JPH03219649A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/701—Tape-automated bond [TAB] connectors

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To form an opening part for metal protrusion formation use in a photosensitive resin layer by a method wherein a transparent conductive film and the photosensitive resin layer are formed sequentially on one main face of a light-transmitting and insulating substrate, an ultraviolet-ray cutoff film having an opening part is formed on its opposite face, ultraviolet rays are transmitted from the opening part up to the photosensitive resin layer and a part exposed to light is removed. CONSTITUTION:A transparent conductive film 2 is formed on one main face of a light- transmitting and insulating substrate 1. The opposite face of the light-transmitting and insulating substrate 1 is spin-coated with a photosensitive polyimide film 3 acting as an ultraviolet- ray cutoff film; a photomask is aligned, and an exposure operation and a developing operation are executed; opening parts 4 are formed in its surface; after that, the whole surface of the transparent conductive film 2 is spin-coated with a photosensitive resin layer 5. Then, the whole surface of the photosensitive polyimide film 3 is irradiated with ultraviolet rays 6; the photosensitive resin layer 5 in positions corresponding to positions of the opening parts 4 is exposed partially to light. The photosensitive resin layer 5 is developed; the parts exposed to light are removed; opening parts 7 for metal protrusion formation use are formed. Metal protrusions 8 are formed in the opening parts 7 for metal protrusion formation use by an electrolytic plating operation. Lastly, the photosensitive resin layer 5 is removed.

Description

【発明の詳細な説明】 〔産業上の利用分野] この発明は、転写バンプ方式等に用いられる金属突起形
成基板およびその製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a metal protrusion-formed substrate used in a transfer bump method, etc., and a method for manufacturing the same.

(従来の技術〕 半導体素子の薄型化、小型化に有力な実装方式にフィル
ムキャリア実装方式がある。
(Prior Art) A film carrier mounting method is an effective mounting method for reducing the thickness and size of semiconductor elements.

この技術においては、半導体素子のA!電極上にCr、
Cu、TiまたはPd等のバリアメタル層を形成した後
、この表面にAuまたは半田等の金属突起が10〜30
μm程度形成される。そしてこの金属突起と、ポリイミ
ドやガラエボ等の絶縁テープ上に形成したCuFiのイ
ンナーリードとを加圧および加熱することによって、接
合される。
In this technology, the A! Cr on the electrode,
After forming a barrier metal layer such as Cu, Ti or Pd, 10 to 30 metal protrusions such as Au or solder are formed on this surface.
It is formed on the order of μm. These metal protrusions and CuFi inner leads formed on an insulating tape made of polyimide, Gala Evo, or the like are bonded by applying pressure and heating.

しかし、このような技術では、半導体素子のAl電極上
にバリアメタル層を形成するための蒸着工程、フォトリ
ングラフィ工程およびエツチング工程や、また金属突起
を形成するためのフォトリソグラフィ工程および電解メ
ツキ等の多くの複雑な工程を必要とし、したがって、こ
のような各工程のための各設備も必要となっていた。ま
た全ての工程において、ウェハが一単位で処理されるた
め、歩留りの低下およびコストの上昇といった問題があ
った。
However, such technology requires a vapor deposition process, a photolithography process, and an etching process to form a barrier metal layer on the Al electrode of a semiconductor element, and a photolithography process and electrolytic plating process to form metal protrusions. Many complicated processes are required, and therefore, various equipment for each of these processes is also required. In addition, in all the steps, wafers are processed in units, which causes problems such as a decrease in yield and an increase in cost.

これらの問題点を解決する技術として、転写バンプ方式
がある。この方式は、繰り返し使用可能な基板上に金属
突起を形成し、この金属突起をフィルムキャリアのイン
ナーリードに転写、接合させ、このインナーリードの金
属突起と、半導体素子の電極とを熱圧着によって接合す
る技術である。
As a technique for solving these problems, there is a transfer bump method. This method involves forming metal protrusions on a reusable substrate, transferring and bonding the metal protrusions to the inner leads of the film carrier, and bonding the metal protrusions of the inner leads and the electrodes of the semiconductor element by thermocompression bonding. It is a technology that

このような技術において、金属突起を形成する基板の横
道は、形成すべき金属突起の種類および量(少量多品種
向き、大量生産向き等)に応じて異なるものが形成され
る。
In such a technique, different lateral paths on the substrate on which metal protrusions are formed are formed depending on the type and amount of metal protrusions to be formed (suitable for small-lot, high-mix production, mass production, etc.).

第2図(a)、 (b)、 (c)、 (d)、 (e
l、 (f)は従来の金属突起の形成方法を示す工程図
である。
Figure 2 (a), (b), (c), (d), (e
1 and (f) are process diagrams showing a conventional method for forming metal protrusions.

第2図(a)に示すように、絶縁性基板9の一主面には
、メツキ用の電極となる導電1lllOが形成される。
As shown in FIG. 2(a), on one main surface of the insulating substrate 9, a conductive layer 1lllO is formed to serve as an electrode for plating.

この導電1IIlOは、例えばPt、ITO(インジウ
ム・ティン・オキサイド)等である。形成方法としては
、スパッタ蒸着法または電子ビーム蒸着法が用いられる
。
This conductive material is, for example, Pt, ITO (indium tin oxide), or the like. As a forming method, a sputter deposition method or an electron beam deposition method is used.

次に第2図(b)に示すように、導電膜10の全面に、
感光性絶縁樹脂層(フォトマスク11がスピンコードさ
れる。さらにこの感光性tIIA縁樹脂層ll中の溶剤
を除去するため、温度80〜100°Cのオーブン中に
約15〜20分間入れられる。
Next, as shown in FIG. 2(b), on the entire surface of the conductive film 10,
A photosensitive insulating resin layer (photomask 11) is spin-coded.Furthermore, in order to remove the solvent in this photosensitive tIIA edge resin layer 11, it is placed in an oven at a temperature of 80-100°C for about 15-20 minutes.

なお感光性絶縁樹脂層11の厚みは、約0.5〜1.5
μm程度である。
Note that the thickness of the photosensitive insulating resin layer 11 is approximately 0.5 to 1.5
It is about μm.

次に第2図(C)に示すように、マスク合わせ装置を用
いて、感光性絶縁樹脂層11の表面にフォトマスク12
を位置合わせし、このフォトマスク12を介して感光性
絶縁樹脂層11の表面に紫外線6を照射することにより
、感光性絶縁樹脂層11を部分的に露光する。
Next, as shown in FIG. 2(C), a photomask 12 is placed on the surface of the photosensitive insulating resin layer 11 using a mask alignment device.
The photosensitive insulating resin layer 11 is partially exposed by irradiating the surface of the photosensitive insulating resin layer 11 with ultraviolet rays 6 through the photomask 12.

次に第2図(d)に示すように、現像液に浸漬すること
により、この感光性絶縁樹脂層11の紫外線照射箇所が
除去され、リンスを施した後に、オープン(図示せず)
により加熱され、感光性絶縁樹脂層11が硬化される。
Next, as shown in FIG. 2(d), the ultraviolet irradiated portions of the photosensitive insulating resin layer 11 are removed by immersion in a developer, and after rinsing, the photosensitive insulating resin layer 11 is opened (not shown).
The photosensitive insulating resin layer 11 is cured by heating.

このようにして感光性絶縁樹脂層11に開口部13が形
成される。
In this way, openings 13 are formed in the photosensitive insulating resin layer 11.

そして第2図(e)に示すように、電解メツキ法により
、開口部13の導電膜10上に金属突起14が高さ約l
Oμm〜30μmで形成される。
Then, as shown in FIG. 2(e), metal protrusions 14 are formed on the conductive film 10 in the openings 13 to a height of about l by electrolytic plating.
It is formed with a thickness of 0 μm to 30 μm.

その後第2図(f)に示すように、レジストストリッパ
により、感光性絶縁樹脂層11が除去される。
Thereafter, as shown in FIG. 2(f), the photosensitive insulating resin layer 11 is removed by a resist stripper.

このように形成した金属突起14をフィルムキャリアの
インナーリードに転写する方法を以下第3図(a)、 
(b)、 (C)に基づいて説明する。
The method of transferring the metal protrusions 14 formed in this way to the inner leads of the film carrier is shown in FIG. 3(a) below.
The explanation will be based on (b) and (C).

第3図(a)に示すように、フィルムキャリア15のイ
ンナーリード16と、金属突起14との位置合わせをす
る。
As shown in FIG. 3(a), the inner leads 16 of the film carrier 15 and the metal protrusions 14 are aligned.

次に第3図(b)に示すように、この位置合わせしたイ
ンナーリード16および金属突起14をポンディングツ
ール17で加熱および加圧(矢印A方向)する。
Next, as shown in FIG. 3(b), the aligned inner leads 16 and metal protrusions 14 are heated and pressurized (in the direction of arrow A) with a pounding tool 17.

なおこの加熱の温度は300°C〜320℃テアリ、加
圧の圧力は1リード当たり5〜20gである。
Note that the heating temperature is 300° C. to 320° C., and the pressurizing pressure is 5 to 20 g per lead.

そして第3図(C)に示すように、このボンディングツ
ール17による加熱、加圧を解除すると、絶縁性基板9
上の金属突起14がインナーリード16側に転写、接合
される。
Then, as shown in FIG. 3(C), when the heating and pressurization by this bonding tool 17 is released, the insulating substrate 9
The upper metal protrusion 14 is transferred and bonded to the inner lead 16 side.

〔発明が解決しようとする課題〕 しかしながら、このような従来の技術においては、絶縁
性基板9上に金属突起14を形成しようとするごとに、
絶縁性基板9上に形成した導電膜lO上に、感光性絶縁
樹脂層(フォトレジスト)11をスピンコード(塗布)
してマスク合わせを行い、露光、現像、リンスを行う工
程および電解メツキにより金属突起14を形成する工程
を繰り返さなければならない、このような工程の中でも
感光性絶縁樹脂層11に開口部13を形成する工程には
、マスク合わせ装置等の高額な設備が必要であるととも
に、工程が複雑化するという問題がある。したがって歩
留りの低下およびコスト削減を阻むという問題があった
。
[Problems to be Solved by the Invention] However, in such conventional techniques, each time a metal protrusion 14 is formed on the insulating substrate 9,
A photosensitive insulating resin layer (photoresist) 11 is spin-coded (coated) on the conductive film lO formed on the insulating substrate 9.
Among these steps, forming the opening 13 in the photosensitive insulating resin layer 11 requires repeating the steps of mask alignment, exposure, development, and rinsing, and the step of forming the metal protrusion 14 by electrolytic plating. This process requires expensive equipment such as a mask alignment device and has the problem of complicating the process. Therefore, there have been problems in that yields are lowered and cost reductions are hindered.

この発明の目的は、上記問題点に鑑み、工程を簡略化し
て、歩留り向上およびコスト低減を実現できる金属突起
形成基板およびその製造方法を提供するものである。
SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide a metal protrusion-formed substrate and a method for manufacturing the same, which can simplify the process, improve yield, and reduce costs.

(課題を解決するための手段〕 請求項(1)記載の金属突起形成基板は、透光・絶縁性
基板と、この透光・絶縁性基板の一主面に形成した透明
導1に膜と、前記透光・絶縁性基板の反対面上に形成し
た開口部を有する紫外線遮断膜と、前記透明導電膜上に
形成され、かつ前記紫外線遮断膜の開口部の位置と対応
する位置に金属突起形成用開口部を有する感光性樹脂層
とを備えたものである。
(Means for Solving the Problems) The metal protrusion-formed substrate according to claim (1) includes a transparent/insulating substrate, and a transparent conductor 1 formed on one main surface of the transparent/insulating substrate, and a film on the transparent conductor 1 formed on one main surface of the transparent/insulating substrate. , an ultraviolet blocking film having an opening formed on the opposite side of the transparent/insulating substrate; and a metal protrusion formed on the transparent conductive film at a position corresponding to the opening of the ultraviolet blocking film. The photosensitive resin layer includes a photosensitive resin layer having a forming opening.

請求項(2)記載の金属突起形成基板の製造方法は、一
主面に透明導電膜を形成し、反対面に開口部を有する紫
外線遮断膜を形成した透光・絶縁性基板を準備する工程
と、 前記透明導電膜上に感光性樹脂層を形成する工程と、 前記紫外線遮断膜の表面側から紫外線を照射することに
より、前記開口部を透過して前記感光性樹脂層に紫外線
を照射する工程と、 この紫外線の照射による前記感光性樹脂層の感光箇所を
現像除去することによって、前記紫外線遮断膜の開口部
の位置と対応する位置に金属突起形成用開口部を形成し
た後、この感光性樹脂層を硬化させる工程とを含むこと
を特徴とする。
The method for manufacturing a metal protrusion-formed substrate according to claim (2) includes the step of preparing a transparent/insulating substrate on which a transparent conductive film is formed on one main surface and an ultraviolet blocking film having openings on the opposite surface. forming a photosensitive resin layer on the transparent conductive film; and irradiating the photosensitive resin layer with ultraviolet rays through the openings by irradiating the ultraviolet rays from the surface side of the ultraviolet blocking film. Step: By developing and removing the exposed portions of the photosensitive resin layer due to the ultraviolet irradiation, an opening for forming a metal protrusion is formed at a position corresponding to the opening of the ultraviolet blocking film. The method is characterized in that it includes a step of curing the plastic resin layer.

(作用〕 この発明の構成によれば、透光・絶縁性基板の一主面に
透明導電膜を形成し、この透明導電膜上に感光性樹脂層
を形成し、さらに透光・絶縁性基板の反対面に開口部を
有する紫外線遮断膜を形成したため、この紫外線遮断膜
の開口部から反対面に形成した感光性樹脂層まで紫外線
を透過させ、その感光箇所を現像および除去することに
よって、感光性樹脂層に金属突起形成用関口部を形成す
ることができる。したがって従来、金属突起を形成する
べき開口部を感光性樹脂層に形成する場合に必要であっ
たマスク合わせによるバターニングの工程が不必要とな
り、紫外線遮断膜を用いることによって、感光性樹脂層
に金属突起形成用開口部を容易に、かつ繰り返し形成す
ることができる。
(Function) According to the configuration of the present invention, a transparent conductive film is formed on one main surface of a light-transmitting/insulating substrate, a photosensitive resin layer is formed on the transparent conductive film, and the light-transmitting/insulating substrate is further formed with a photosensitive resin layer. Since a UV-blocking film with openings is formed on the opposite side of the film, ultraviolet rays are transmitted from the openings of the UV-blocking film to the photosensitive resin layer formed on the opposite side, and the exposed areas are developed and removed. A gate part for forming a metal protrusion can be formed in a photosensitive resin layer.Therefore, the patterning process by mask alignment, which was conventionally required when forming an opening in a photosensitive resin layer where a metal protrusion is to be formed, can be formed. By using the ultraviolet blocking film, openings for forming metal protrusions can be easily and repeatedly formed in the photosensitive resin layer.

[実施例〕 第1図(a)、 (b)、 (cl、 (d)、 (e
)、 (f)は、この発明の一実施例の金属突起形成基
板の製造方法を示す工程図である。
[Example] Figure 1 (a), (b), (cl, (d), (e
) and (f) are process diagrams showing a method of manufacturing a metal protrusion-formed substrate according to an embodiment of the present invention.

第1図(a)に示すように、透光・絶縁性基板lの一主
面に、スパッタ蒸着法、電子ビーム蒸着法等を用いて透
明導電膜2を形成する。
As shown in FIG. 1(a), a transparent conductive film 2 is formed on one main surface of a transparent/insulating substrate 1 using a sputter deposition method, an electron beam deposition method, or the like.

この透明導電膜2は、ITO(インジウム・ナイン・オ
キサイド)等であり、そのシート抵抗は、10Ω/口以
下が好ましい。これは形成する金属突起のバラツキを2
pm以下に抑えることができるためである。
This transparent conductive film 2 is made of ITO (indium nine oxide) or the like, and its sheet resistance is preferably 10Ω/hole or less. This reduces the variation in the metal protrusions formed by 2
This is because it can be suppressed to below pm.

またこの透光・絶縁性基板lの反対面に、紫外線遮断膜
となる感光性ポリイミド膜3をスピンコードし、この表
面にフォトマスクを合わせ、露光および現像して、開口
部4を形成する。
Further, a photosensitive polyimide film 3 serving as an ultraviolet blocking film is spin-coded on the opposite surface of the light-transmitting/insulating substrate 1, a photomask is placed on this surface, and openings 4 are formed by exposure and development.

なお透光・絶縁性基板lとしては、耐熱ガラス。Note that the light-transmitting/insulating substrate l is heat-resistant glass.

石英基板等を用いる。A quartz substrate or the like is used.

次に第1図(b)に示すように、透明導電膜2の全面に
、感光性樹脂層5をスピンコードする。
Next, as shown in FIG. 1(b), a photosensitive resin layer 5 is spin-coded over the entire surface of the transparent conductive film 2.

次に第1図(C)に示すように、感光性ポリイミド膜3
の全面に紫外線6を照射し、この紫外線6が、開口部4
から透光・絶縁性基板lおよび透明導電膜2を透過する
ことにより、開口部4の位置に対応する位置の感光性樹
脂層5を部分的に露光、感光させる。
Next, as shown in FIG. 1(C), the photosensitive polyimide film 3
The entire surface of the opening 4 is irradiated with ultraviolet rays 6, and this ultraviolet 6
By transmitting light through the transparent/insulating substrate 1 and the transparent conductive film 2, the photosensitive resin layer 5 at a position corresponding to the position of the opening 4 is partially exposed and exposed.

次に第1図(d)に示すように、この感光性樹脂層5に
、現像、感光部分の除去5 リンスおよびオーブンによ
る硬化等の処理を行い、金属突起形成用開口部7を形成
する。
Next, as shown in FIG. 1(d), this photosensitive resin layer 5 is subjected to processing such as development, removal of the exposed portion 5, rinsing, and curing in an oven to form openings 7 for forming metal protrusions.

次に第1図(e)に示すように、金属突起形成用開口部
7に電解メツキにより、高さ10〜30μmの金属突起
8を形成する。
Next, as shown in FIG. 1(e), a metal protrusion 8 having a height of 10 to 30 μm is formed in the metal protrusion forming opening 7 by electrolytic plating.

そして最後に第1図(f)に示すように、悪光性樹脂層
5をレジストストリッパで除去する。
Finally, as shown in FIG. 1(f), the illuminating resin layer 5 is removed using a resist stripper.

なおレジストストリッパは、発煙硝酸等であり、このレ
ジストストリッパにより、紫外線遮断膜(感光性ポリイ
ミドWII3)が侵されることはない。
Note that the resist stripper is a fuming nitric acid or the like, and the ultraviolet blocking film (photosensitive polyimide WII3) is not attacked by this resist stripper.

また紫外線遮断膜としては、この感光性ポリイミドWA
3に限らず、レジストストリッパに侵されない金属膜(
Cr、Ti、PL等)を用いることができる。
In addition, as a UV blocking film, this photosensitive polyimide WA
Not limited to 3, metal film that is not attacked by resist stripper (
Cr, Ti, PL, etc.) can be used.

このように形成した金属突起8を、第3図(a)。The metal protrusion 8 formed in this way is shown in FIG. 3(a).

(b)、 (C)に示す従来の方法と同様にして、フィ
ルムキャリアのインナーリードに転写および接合する。
In the same manner as the conventional method shown in (b) and (C), it is transferred and bonded to the inner lead of the film carrier.

そして金属突起をインナーリードに転写した金属突起形
成基板に再び金属突起を形成する場合、第1図(b)に
示す工程から繰り返す。すなわち第1図(a)に示す構
造を有する透光・絶縁性基板1.透明導電膜2および紫
外線遮断膜(感光性ポリイミド膜3)は、繰り返し使用
可能となり、以後の工程では、従来のようなマスク合わ
せによるパターンニングの工程が不必要となる。
When forming metal protrusions again on the metal protrusion-forming substrate on which the metal protrusions have been transferred to the inner leads, the steps shown in FIG. 1(b) are repeated. That is, a light-transmitting/insulating substrate 1 having the structure shown in FIG. 1(a). The transparent conductive film 2 and the ultraviolet shielding film (photosensitive polyimide film 3) can be used repeatedly, and in subsequent steps, the conventional patterning step by mask alignment becomes unnecessary.

なお紫外線遮断膜として上記金属膜を用いた場合、金属
突起を形成した透光・絶縁性基板は、この金属膜のため
に不透明となり、したがって金属突起をフィルムキャリ
アのインナーリードに転写および接合する際の位置合わ
せは、上方からのみしかできないが、紫外線遮断膜とし
て透明な感光性ポリイミドllll3を用いた場合、上
方からも、下方からも金属突起8とフィルムキャリアの
インナーリードとの位置合わせを行うことができるので
紫外線遮断膜は、透明であることが好ましい。
Note that when the above metal film is used as a UV blocking film, the transparent/insulating substrate on which the metal protrusions are formed becomes opaque due to this metal film, so when the metal protrusions are transferred and bonded to the inner leads of the film carrier, The alignment can only be done from above, but if transparent photosensitive polyimide llll3 is used as the ultraviolet blocking film, the alignment between the metal protrusion 8 and the inner lead of the film carrier can be done from above as well as from below. Therefore, it is preferable that the ultraviolet blocking film is transparent.

〔発明の効果〕〔Effect of the invention〕

この発明の構成によれば、透光・絶縁性基板の一主面に
透明導電膜を形成し、この透明導電股上に感光性樹脂層
を形成し、さらに透光・絶縁性基板の反対面に開口部を
有する紫外線遮断膜を形成したため、この紫外線遮断膜
の開口部から反対面に形成した感光性樹脂層まで紫外線
を透過させ、感光箇所を現像除去することによって、感
光性樹脂層に金属突起形成用開口部を形成することがで
きる。したがって開口部を有する紫外線遮断膜を用いる
ことによって、従来、金属突起を形成するべき開口部を
感光性樹脂層に形成する場合に必要であったマスク合わ
せによるパターニングの工程を行なわずに、感光性樹脂
層に金属突起形成用間ロ部ヲ容易に、かつ繰り返し形成
することができる・その結果、従来のように高額なマス
ク合わせ装置を必要とせず、簡単な紫外線照射機のみで
、感光性樹脂層に形成する金属突起形成用開口部のパタ
ーンニングが可能となり、大幅なコスト削減が可能とな
り、工程が極めて簡略化、短縮化され、歩留り向上が実
現できる。
According to the structure of the present invention, a transparent conductive film is formed on one main surface of a transparent/insulating substrate, a photosensitive resin layer is formed on the transparent conductive crotch, and further, a photosensitive resin layer is formed on the opposite surface of the transparent/insulating substrate. Since an ultraviolet blocking film with openings is formed, ultraviolet rays are transmitted through the openings of the ultraviolet blocking film to the photosensitive resin layer formed on the opposite side, and by developing and removing the exposed areas, metal protrusions are formed on the photosensitive resin layer. A forming opening can be formed. Therefore, by using an ultraviolet blocking film having openings, it is possible to avoid the patterning process by mask alignment, which was conventionally necessary when forming openings in a photosensitive resin layer where metal protrusions are to be formed. It is possible to easily and repeatedly form the metal protrusion forming grooves on the resin layer.As a result, there is no need for expensive mask alignment equipment as in the past, and a simple UV irradiation machine can be used to form photosensitive resins. It becomes possible to pattern the openings for forming metal protrusions in the layer, making it possible to significantly reduce costs, greatly simplifying and shortening the process, and improving yield.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)、 (b)、 (cl、 (d)、 (e
)、 (f)はこの発明の一実施例の金属突起形成基板
の製造方法を示す工程図、第2図(a)、 (b)、 
(C)、 (d)、 (e)、 (f)は従来の金属突
起の形成方法を示す工程図、第3図(a)、 (b)、
 (C1は形成した金属突起をフィルムキャリアのイン
ナーリードに転写、接合する工程を示す工程図である。 l・・・透光・絶縁性基板、2・・・透明導電膜、3・
・・感光性ポリイミド膜(紫外線遮断1lI)、4・・
・開口部、5・・・感光性樹脂層、7・・・金属突起形
成用開口部 (a) (b) 第 図 (a) (b) (c) ◇ 第 図 第 (e) (f) 図
Figure 1 (a), (b), (cl, (d), (e
), (f) is a process diagram showing a method for manufacturing a metal protrusion-formed substrate according to an embodiment of the present invention, and FIGS. 2(a), (b),
(C), (d), (e), (f) are process diagrams showing the conventional method for forming metal protrusions, Figures 3 (a), (b),
(C1 is a process diagram showing the process of transferring and bonding the formed metal protrusion to the inner lead of the film carrier. l... Transparent/insulating substrate, 2... Transparent conductive film, 3...
・・Photosensitive polyimide film (UV blocking 1lI), 4・・
- Opening, 5... Photosensitive resin layer, 7... Opening for forming metal protrusions (a) (b) Figures (a) (b) (c) ◇ Figures (e) (f) figure

Claims (2)

【特許請求の範囲】[Claims] (1)透光・絶縁性基板と、この透光・絶縁性基板の一
主面に形成した透明導電膜と、前記透光・絶縁性基板の
反対面上に形成した開口部を有する紫外線遮断膜と、前
記透明導電膜上に形成され、かつ前記紫外線遮断膜の開
口部の位置と対応する位置に金属突起形成用開口部を有
する感光性樹脂層とを備えた金属突起形成基板。
(1) A light-transmitting/insulating substrate, a transparent conductive film formed on one main surface of the light-transmitting/insulating substrate, and an ultraviolet shield having an opening formed on the opposite surface of the light-transmitting/insulating substrate. A metal protrusion forming substrate comprising: a film; and a photosensitive resin layer formed on the transparent conductive film and having an opening for forming a metal protrusion at a position corresponding to the position of the opening of the ultraviolet blocking film.
(2)一主面に透明導電膜を形成し、かつ反対面に開口
部を有する紫外線遮断膜を形成した透光・絶縁性基板を
準備する工程と、 前記透明導電膜上に感光性樹脂層を形成する工程と、 前記紫外線遮断膜の表面側から紫外線を照射することに
より、前記開口部を透過して前記感光性樹脂層に紫外線
を照射する工程と、 この紫外線の照射による前記感光性樹脂層の感光箇所を
現像除去することによって、前記紫外線遮断膜の開口部
の位置と対応する位置に金属突起形成用開口部を形成し
た後、この感光性樹脂層を硬化させる工程とを含む金属
突起形成基板の製造方法。
(2) A step of preparing a light-transmitting/insulating substrate on which a transparent conductive film is formed on one main surface and an ultraviolet blocking film having openings on the opposite surface, and a photosensitive resin layer on the transparent conductive film. a step of irradiating the photosensitive resin layer with ultraviolet rays through the openings by irradiating the ultraviolet rays from the surface side of the ultraviolet blocking film; and a step of irradiating the photosensitive resin layer with ultraviolet rays through the openings; A metal protrusion comprising the step of forming an opening for forming a metal protrusion at a position corresponding to the position of the opening of the ultraviolet blocking film by developing and removing a photosensitive portion of the layer, and then curing the photosensitive resin layer. A method for manufacturing a forming substrate.
JP2015460A 1990-01-24 1990-01-24 Substrate for metal protrusion formation and its manufacture Pending JPH03219649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015460A JPH03219649A (en) 1990-01-24 1990-01-24 Substrate for metal protrusion formation and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015460A JPH03219649A (en) 1990-01-24 1990-01-24 Substrate for metal protrusion formation and its manufacture

Publications (1)

Publication Number Publication Date
JPH03219649A true JPH03219649A (en) 1991-09-27

Family

ID=11889413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015460A Pending JPH03219649A (en) 1990-01-24 1990-01-24 Substrate for metal protrusion formation and its manufacture

Country Status (1)

Country Link
JP (1) JPH03219649A (en)

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