JPH0322416A - Heat treatment furnace - Google Patents

Abstract

PURPOSE:To prevent the adhesion of organic matter in an exhaust chamber, and to burn and exhaust the organic matter positively by installing a cure treating chamber burning and fixing a liquefied coated film and a gas mixing reaction chamber burning an exhaust gas from the cure treating chamber. CONSTITUTION:Wafer boards 3 are placed onto a quartz table 5, and inserted into an outer tube 31 by a boat elevator 6 together with an inner tube 35, and polyimide-coated wafers 4 are treated at a high temperature. N2 gas 9 is injected from an N2-gas introducing port 8 at that time. A gas generated from the polyimide-coated wafers 4 through cure treatment is introduced from the N2-gas introducing port 8 at that time. Both gases are mixed at the same time as heating in the introducing port 8, and exhausted from an exhaust port 37 as a mixed gas 41. O2 gas 42 from an O2-gas introducing tube 34 is reacted simultaneously with the mixed gas 41 exhausted from the exhaust port 37 of a cure treating chamber, and changed into a combustion gas 43. The combustion gas 43 is exhausted from an exhaust port 38. Accordingly, a reaction is conducted sufficiently, and no carbon film adheres in the outer tube 31.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to the structure of a heat treatment furnace used in semiconductor manufacturing.

(Prior Art) Conventionally, as technologies in this field, there have been the following, for example.

FIG. 3 is a sectional view of a conventional vertical heat treatment furnace, and FIG. 4 is a perspective view of an outer tube and an inner tube of the vertical heat treatment furnace.

In the vertical heat treatment furnace shown here, curing is performed at a relatively low temperature (room temperature to 500° C.), such as a polyimide curing furnace, in which organic exhaust gas is generated. Here, curing refers to baking and solidifying a liquid coating film to form a stable film.

This vertical heat treatment furnace is equipped with an outer tube 1 and an inner tube 2. The outer tube 1 has a cylindrical shape with only the lower part open, the inner tube 2 is slightly smaller than the outer tube 1, and the lower part of the cylinder is It is an opening, and the upper part is formed with a discharge hole 2a for the voloid generated gas 10. Then, the wafer board 3 is placed on the quartz table 5, and the quartz table 5 and the inner tube 2 are inserted into the outer tube 1 by the boat elevator 6, and the polyimide coated wafer 4 is subjected to high temperature treatment. The processing conditions at that time were 100° C. while injecting N2 gas 9 at a rate of 51/win from the N gas inlet 8. 200°C, 3
The temperature is 50°C for 1 hour each. At this time, the gas generated from the boiling-coated wafer 4 during the curing process is mixed with the N2 gas 9, and the mixed gas 10 is discharged from the exhaust port 7. However, in that case, the organic matter (carbon film) 11 mainly adheres to the bottom part of the furnace.

In addition, the heat treatment furnace as shown in FIG.
1, a cap 22, and a heater 23. A wafer 25 is placed on a boat 24, and a gas inlet 26 is connected to the N. Gas is introduced, heated, and exhausted from the exhaust port 27 of the furnace cap. In this case, when the organic gas generated from the wafer 25 passes through a region heated by the heater 23 (300 to 400 degrees Celsius) and is cooled near the furnace mouth, an organic substance (carbon layer) 28 is generated there. adhere to.

When the amount of attached organic matter increases as mentioned above, the number of particles increases, causing a decrease in device yield and shortening the tube cleaning cycle, which causes a reduction in the processing capacity of the curing furnace. .

(Problems to be Solved by the Invention) As described above, in the conventional heat treatment furnace configuration and treatment method, organic matter (force-bonding film) attached to the bottom part of the furnace 11
．． 28, the number of particles increases.

As a result, there have been problems in that the yield of devices is reduced, the cleaning cycle of the tube is shortened, the maintenance period is shortened, and the throughput of the curing furnace is also reduced.

The present invention eliminates the above-mentioned problems of an increase in particles and a shortened maintenance cycle, and provides an O gas inlet on the outer tube and an exhaust port for Nt gas and gas generated by curing treatment on the side of the inner tube. Accordingly, it is an object of the present invention to provide a heat treatment furnace that can reliably burn and exhaust organic substances generated from polyimide coated wafers.

(Means for Solving the Problems) In order to achieve the above object, the present invention provides a heat treatment furnace used for semiconductor manufacturing, which includes a curing chamber for baking and solidifying a liquid coating film, and an exhaust gas from the curing chamber. The system is equipped with a gas mixing reaction chamber in which the gas is combusted.

(Function) According to the present invention, as described above, the curing chamber for baking and solidifying the liquid coating film and the gas mixing reaction chamber for burning the exhaust gas from the curing chamber are provided. As shown in Figure 1, apply N to the inner tube (35).
2 gas and the gas generated by the curing process (41
)'s exhaust port (37>) to the outer tube (31>).
A gas inlet (33) is provided, and the mixed gas (41) and 02 gas (42) are mixed and combusted depending on the temperature inside the furnace.
Adhesion of organic matter in the exhaust section can be eliminated.

(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a sectional view of a vertical heat treatment furnace showing an embodiment of the present invention;
FIG. 2 is a perspective view of the outer tube and inner tube of the vertical heat treatment furnace.

This vertical heat treatment furnace is equipped with an outer tube 31 and an inner tube 35, and the outer tube 31 has a cylindrical shape with an opening 32 at the bottom, and an 02 gas inlet 33 is formed at the top. . Further, the inner tube 35 is slightly smaller than the outer tube 31, and has an opening 36 at the bottom of its cylinder. On the side surface of the terminal end of the inner tube 35, an exhaust port 37 for a mixed gas 41 of N2 gas 9 and gas generated by the curing process is provided, for example, from 8 to 1.
0 pieces have been confirmed.

Therefore, the wafer board 3 is placed on the quartz table 5, and the quartz table 5 is inserted into the outer tube 31 together with the inner tube 35 by the boat elevator 6.
Boli also processes the coated wafer 4 at high temperature. The processing conditions at that time are, for example, 51/sin from the N2 gas inlet 8.
N! 100°C, 200°C while injecting gas 9
℃ and 350℃ for 1 hour each. At that time, the gas generated from the boiled ξ-d coated wafer 4 due to the curing process is introduced from the N gas inlet 8, for example 10 l.
/Illin's N2 gas 9 (a heating coil (not shown) is provided outside the furnace) is heated and mixed to form a mixed gas 41, which is then released into the exhaust port 37 provided on the side surface of the terminal end of the inner tube 35. More exhaust. At the same time, the Ox gas introduction pipe 3 at the upper part of the outer tube 31
4, for example, Ox introduced by l5Il/IIlin
The gas 42 reacts with the mixed gas 41 exhausted from the exhaust port 37 of the curing chamber to become a combustion gas 43. This combustion gas 43 is exhausted to the outside of the furnace through the exhaust port 3B.

In this way, the inner tube 35 constitutes a curing chamber, the outer tube 31 covering it constitutes a gas mixing reaction chamber, and the mixed gas from the curing treatment discharged from the exhaust port 37 is combusted. In other words, the inner tube 35 is provided with an exhaust port 37 for the mixed gas 41 that has been cured, and the outer tube 31 is provided with an Ot gas inlet 33, and the mixed gas 41 and 02 gas 42 are mixed and combusted depending on the furnace temperature. can be done.

FIG. 6 is a sectional view of a horizontal heat treatment furnace showing another embodiment of the present invention.

As shown in this figure, the furnace body includes an outer tube 51, an inner tube 52 constituting the air processing chamber, and a heater 5.
Consists of 3. Therefore, the polyimide coated wafer 5 placed on the wafer board 54 inside the inner tube 52
5, and N2 gas, for example, is introduced from the N2 gas inlet 56 as a processing gas. Then, when the mixed gas generated by the curing process exits from the exhaust port 57, the 02 gas introduced from the 02 gas inlet 58 of the outer tube 51
It is mixed with gas and combusted when passing through the gap 59 between the outer tube 5l and the inner tube 52, and this combustion gas is exhausted from the exhaust port 60. In this way, by mixing the first gas for processing and the second gas for combustion, the reaction can be carried out sufficiently, for example,
By changing to CO, a carbon film will no longer adhere to the inside of the outer tube 5l.

In addition, in order to simplify the structure of the furnace body, as shown in FIG. A gas mixing reaction chamber 72 may also be provided. With this structure, the heating area by the heater 76 becomes longer than in the conventional case, but the structure inside the processing tube 75 can be configured relatively easily. In FIG. 7, 77 is an Ot gas inlet pipe, 78 is an N gas inlet, and 79 is a combustion gas exhaust port.

Note that the present invention is not limited to the above embodiments,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.

(Effects of the Invention) As described above in detail, according to the present invention, a curing chamber for baking and solidifying a liquid coating film and a gas mixing reaction chamber for burning exhaust gas from the curing chamber are provided. As a result, the exhaust gas from the curing chamber is completely combusted, reducing particle generation and lengthening the maintenance cycle.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a vertical heat treatment furnace showing an embodiment of the present invention;
Figure 2 is a perspective view of the outer tube and inner tube of the vertical heat treatment furnace, Figure 3 is a sectional view of the conventional vertical heat treatment furnace, and Figure 4 is a perspective view of the outer tube and inner tube of the vertical heat treatment furnace. , FIG. 5 is a sectional view of another conventional heat treatment furnace, FIG. 6 is a sectional view of a horizontal heat treatment furnace showing another embodiment of the present invention, and FIG. 7 is a sectional view of another further embodiment of the present invention. FIG. 2 is a sectional view of a horizontal heat treatment furnace. 3,54...Wafer board, 4.55...Bolly coated wafer, 5...Quartz table, 6...Boat elevator, 8. 56. 78...N8 gas inlet, 9...N! Gas, 31. 51... Outer tube, 32. 36... opening, 33. 58...
Ot gas inlet, 34. 77...Ot gas introduction pipe,
35. 52... Inner tube, 37, 57.
73...Exhaust port (mixed gas), 3B, 60. 7
9...Exhaust port (combustion gas), 41...Mixed gas, 4
2...02 gas, 43...combustion gas, 53. 16
... Heater, 59 ... Gap, 71 ... Cure processing chamber, 72 ... Gas mixing reaction chamber, 74 ... Partition plate,
75...processing tube.

Claims (3)

[Claims] (1) In a heat treatment furnace used for semiconductor manufacturing, (a
A heat treatment furnace comprising:) a curing chamber for baking and solidifying a liquid coating film; and (b) a gas mixing reaction chamber for burning exhaust gas from the curing chamber. (2) The heat treatment furnace according to claim 1, wherein the curing chamber includes an inner tube, and the gas mixing reaction chamber includes the inner tube and an outer tube covering the inner tube. (3) The heat treatment furnace according to claim 1, wherein the curing chamber and the gas mixing reaction chamber are constructed by providing a partition plate having an outlet in a single treatment tube.