JPH03225983A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPH03225983A JPH03225983A JP2077790A JP2077790A JPH03225983A JP H03225983 A JPH03225983 A JP H03225983A JP 2077790 A JP2077790 A JP 2077790A JP 2077790 A JP2077790 A JP 2077790A JP H03225983 A JPH03225983 A JP H03225983A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- active layer
- gap
- lattice constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は可視光半導体レーザに関するものであり、特に
発振波長の短波長化、低閾値化、温度特性の改善および
、レーザ駆動回路、受光素子、受光素子駆動回路の集積
化に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a visible light semiconductor laser, and in particular to shortening the oscillation wavelength, lowering the threshold value, improving temperature characteristics, a laser driving circuit, and a light receiving element. , relates to the integration of light-receiving element drive circuits.
（従来の技術）
ＡｌｌＧａＩｎＰ系可視光半導体レーザは、従来ＧａＡ
ｓ基板上にダブルヘテロ構造が形成され、ＧａＡｓ基板
と格子整合するする組成の（ＡＮ 。(Prior art) AllGaInP visible light semiconductor lasers are conventionally made of GaA
A double heterostructure is formed on the S substrate, and the composition of (AN) is lattice matched to the GaAs substrate.
Ｇ ａ ＋−ｕ） ｏ、ｓ Ｉ ｎｏ、ｓ Ｐをクラッ
ド層、（ＡΩｌＧ’ａ １−＋ ） ｏ、ｓ Ｉ ｎ
Ｏ，５Ｐを活性層（０≦ｔａＵ≦１）としている（例え
ばアイ・イ・イー・イー ジャーナル・オブ・クアンタ
ムφエレクトロニクス（ＩＥＩＩＪ Ｊｏｕｒｎａｌ
ｏｆＱｕａｎｔｕｎ＋Ｅｌｅｃｔｒｏｎｉｃｓ）第ＱＥ
−２３巻 ｐ７０４−７１１（１９８７）に構造が示さ
れている）。発振波長は、Ｇ ａｏ、５ Ｉ ｎｏ、５
Ｐを活性層とした場合には６６０〜６９０ｎｎ＋、活
性層を（ＡＩ ＋ Ｃｙａ ｒ−＋ ） ｏ、５ｌｎｏ
５Ｐとした場合には５８０ ｎｍ程度迄の短波長化が期
待できる。G a +-u) o, s I no, s P as cladding layer, (AΩlG'a 1-+ ) o, s I n
O, 5P is the active layer (0≦taU≦1) (for example, IE Journal of Quantum φ Electronics (IEIIJ Journal
ofQuantun+Electronics) No. QE
The structure is shown in Vol.-23, p.704-711 (1987)). The oscillation wavelength is Gao, 5 I no, 5
When P is used as the active layer, 660 to 690nn+, the active layer is (AI + Cya r-+) o, 5lno
In the case of 5P, it is expected that the wavelength will be shortened to about 580 nm.
（発明が解決しようとする課題）
前述の従来技術では、発振波長の短波長化、低閾値化、
温度特性の改善を行うために活性層とクラッド層のエネ
ルギ・ギャップ差Ｅ、を増すとき、クラッド層のＡ、Ｑ
組成を増さねばならない。Ａ、Ｑ組成を増すと、ドーピ
ング効率が低下し、クラッド層の低ドーピング濃度化、
高抵抗化につながり、温度特性の改善や低閾値化が難し
くなる。また、ＧａＡｓ上にレーザを形成しているので
、電子回路や受光素子を集積化するときに、これらをＧ
ａＡｓ上に形成させねばならない。良好な特性の電子回
路や受光素子をＧａＡｓ上に形成することはさ程容易で
はなく、形成できても電子回路や受光素子の単価がＳｉ
基板に形成したものより高くなる。このように、ＧａＡ
ｓ基板上に形成する半導体レーザには、発振波長短波長
化、低閾値化、温度特性の改善ならびに電子回路および
受光素子の集積化の容易化に関し改善すべき課題があっ
た。(Problems to be Solved by the Invention) In the above-mentioned conventional technology, shortening the oscillation wavelength, lowering the threshold value,
When increasing the energy gap difference E between the active layer and the cladding layer in order to improve the temperature characteristics, the A and Q of the cladding layer
The composition must be increased. As the A and Q compositions increase, the doping efficiency decreases, resulting in a lower doping concentration in the cladding layer.
This leads to high resistance, making it difficult to improve temperature characteristics and lower the threshold. In addition, since the laser is formed on GaAs, when integrating electronic circuits and light-receiving elements, these can be
It must be formed on aAs. It is not so easy to form electronic circuits and photodetectors with good characteristics on GaAs, and even if they can be formed, the unit cost of electronic circuits and photodetectors is higher than Si.
It will be higher than that formed on the substrate. In this way, GaA
Semiconductor lasers formed on s-substrates have problems that need to be improved in terms of shortening the oscillation wavelength, lowering the threshold value, improving temperature characteristics, and facilitating the integration of electronic circuits and light-receiving elements.
この発明はそれらの課題の解決を目的とする。This invention aims to solve these problems.
（課題を解決するための手段） この発明の要旨は、Ｓｉ基板上に、（Ａｊｌｌ 。(Means for solving problems) The gist of this invention is that (Ajll) is formed on a Si substrate.
Ｇａ、−ｘ ） ｙ Ｉ ｎｌ−ｙ Ｐ （０≦ｘ≦
１．０≦ｙ≦１）を活性層、（ｌ ｚ Ｇａ１−＋ ）
ｗ Ｉ ｎｌ−、ｐ（０≦ｚ≦１，０≦ｗ≦１）をク
ラッド層とするダブルヘテロ構造（Ｄ Ｈ）を有する構
造により、前述の従来技術に残された課題を過解決する
ことにある。特に活性層をＧａｖ Ｉ Ｊ−ｖＰ （０
≦ｖ≦１）、クラッド層をＧａＰとして、さらに活性層
厚を２００Ａ以下とすることにより、改善の効果が著し
い。また、Ｓｉ基板とダブルヘテロ構造との間に、Ａ、
７１ 、 Ｇａ＋−ｖ Ｐ （０≦ｖ≦１）の格子定数
の値から連続的に又は、段階的にクラッド層の格子定数
の値に近づける層を有することにより、本発明により生
じうる問題を除去する。Ga, -x) y I nl-y P (0≦x≦
1.0≦y≦1) as the active layer, (l z Ga1−+ )
Over-solving the problems remaining in the above-mentioned conventional technology with a structure having a double heterostructure (D H) having w I nl-, p (0≦z≦1, 0≦w≦1) as a cladding layer. It is in. In particular, the active layer is Gav I J-vP (0
≦v≦1), by setting the cladding layer to GaP and further setting the active layer thickness to 200A or less, the improvement effect is remarkable. Moreover, between the Si substrate and the double heterostructure, A,
71, by having a layer whose lattice constant value approaches the value of the lattice constant of Ga+-v P (0≦v≦1) continuously or stepwise, the problem that may occur according to the present invention is eliminated. do.
各層形成のための結晶成長方法には、有機金属熱分解気
相エビタクシャル法（ＭＯＶＰＥ法）、分子ビームエピ
タクシャル法（ＭＢＥ法）、液相エピタクシャル法（Ｌ
ＰＥ法）、ハロゲン輸送気相エビタクシャル法（ＨＴ−
ＶＰＥ法）など各種の方法が適用でき、本発明は結晶の
成長方法に制限されることな〈実施できる。Crystal growth methods for forming each layer include metal organic pyrolysis vapor phase epitaxial method (MOVPE method), molecular beam epitaxial method (MBE method), liquid phase epitaxial method (L
PE method), halogen transport gas phase epitaxial method (HT-
Various methods such as the VPE method can be applied, and the present invention is not limited to the crystal growth method.
（作用）
第４図に、（Ａｌｌ ！ Ｇａ１−ｘ ） ｙ Ｉ ｎ
ｌ−ｙ Ｐのエネルギギャップと格子定数の関数を示す
。実線で囲まれた領域で全組成範囲が示される。Ｓｔの
格子定数（ａ ｓ、＝ ５．４３Ａ ）も併せて示す。(Effect) In Fig. 4, (All ! Ga1-x ) y I n
The energy gap and lattice constant function of ly P is shown. The entire composition range is shown in the area surrounded by solid lines. The lattice constant (as, = 5.43A) of St is also shown.
図中斜線部は間接遷移領域で、無地の部分は直接遷移領
域である。図より、同じエネルギギャップ値でも格子定
数の小さいとき程へρ組成を減らすことのできることが
わかる。前述のようにドーピング特性はＡβ組成の小さ
いことが望ましい。ところが、格子定数を小さくすると
、ＧａＡｓの格子定数からのずれが大きくなり、ミスフ
ィツト転位が発生し、結晶の品質を損う。ところで、Ｓ
ｔとＧａＰの格子定数を比較すると、Ｓｔが５．４３Ａ
、 Ｇ ａ Ｐが５．４５Ａなので、その格子不整合度
は３．７ Ｘｌ０−’と非常に小さい。そこで、Ｓｉ基
板上にＧａＰをクラッド層、Ｇａｏ、、 Ｉ ｎｏ、５
ｐを活性層とすれば、ＡＩを用いずにダブルヘテロ構
造が形成され、発振波長も６６０〜６９０ｎＩ１１のも
のが得られる。In the figure, the shaded area is an indirect transition area, and the solid area is a direct transition area. The figure shows that even with the same energy gap value, the ρ composition can be reduced as the lattice constant becomes smaller. As mentioned above, it is desirable that the doping characteristics have a small Aβ composition. However, when the lattice constant is made smaller, the deviation from the lattice constant of GaAs increases, causing misfit dislocations and impairing the quality of the crystal. By the way, S
Comparing the lattice constant of t and GaP, St is 5.43A
, G a P is 5.45 A, so the degree of lattice mismatch is very small at 3.7 Xl0-'. Therefore, we created a GaP cladding layer on the Si substrate, Gao, I no, 5
If p is used as the active layer, a double heterostructure can be formed without using AI, and an oscillation wavelength of 660 to 690 nI11 can be obtained.
また、ＧａＰをクラッド層、Ｇ ａｏ、６ Ｉ ｎ、４
Ｐを活性層とすると発振波長６２０ ｎｍ程度のものが
、／ｌを用いずに得られる。レーザのＤＨ（ダブルヘテ
ロ構造）の場合活性層厚は０．１μｍ以下と薄くするの
で、活性層のみ格子定数がずれていても、素子特性には
それ程の悪影響を及ぼさない。活性層厚を＜２００Ａの
薄膜量子井戸構造とすると、格子不整合の影響がさらに
軽減される゛ことに加えて、量子効果が得られる。また
、Ｓｉ基板とＤＨとの間に、ＧａＰの格子定数から、格
子定数を連続的に或いは段階的に減じてゆけば、クラッ
ド層としてより活性層の格子定数に近い組成のものを用
いることがき、素子特性や信頼性は更に向上する。In addition, GaP is used as a cladding layer, Gao, 6 I n, 4
When P is used as the active layer, an oscillation wavelength of about 620 nm can be obtained without using /l. In the case of a DH (double hetero structure) of a laser, the active layer thickness is made as thin as 0.1 μm or less, so even if the lattice constant of only the active layer is shifted, it does not have such an adverse effect on the device characteristics. A thin-film quantum well structure with an active layer thickness of <200 A not only further reduces the effects of lattice mismatch, but also provides quantum effects. Furthermore, if the lattice constant is continuously or stepwise reduced from the GaP lattice constant between the Si substrate and the DH, it is possible to use a cladding layer with a composition closer to the lattice constant of the active layer. , device characteristics and reliability are further improved.
（実施例）
第１図に本発明の第１の実施例を示す。この実施例の製
造においては半導体層の成長はＭＯＶＰＥ法により行な
った。ｎ型Ｓｉ基板１上に厚さ１μｍのＳｔドープｎ−
ＧａＰクラッド層２、厚さ０．０８μｍのアンドープＧ
ａ Ｏ６，Ｉ ｎ ｏ、４．Ｐ活性層３、厚さ１μｍ
のＺｎドープｐ−ＧａＰクラッド層４をＭＯＶＰＥ法に
より成長よる。この上にＳｉＯ２膜５を形成し、電流注
入用ストライプ６を形成するために、フォトリソグラフ
ィ法などにより、ストライプ状にＳｉＯ２を選択的に除
去する。最後にｐ型用電極７としてＡｕＺｎ合金などを
、ｎ型用電極８としてＡｕＧｅ合金などを、蒸着法等に
よりそれぞれ耐着させる。活性層の組成は所望のレーザ
発振波長に応じて変えられる。(Example) FIG. 1 shows a first example of the present invention. In the manufacture of this example, the semiconductor layer was grown by the MOVPE method. A 1 μm thick St-doped n-
GaP cladding layer 2, undoped G with a thickness of 0.08 μm
a O6, I no, 4. P active layer 3, thickness 1 μm
A Zn-doped p-GaP cladding layer 4 is grown using the MOVPE method. A SiO2 film 5 is formed on this, and in order to form current injection stripes 6, SiO2 is selectively removed in a stripe shape by photolithography or the like. Finally, an AuZn alloy or the like is deposited as the p-type electrode 7, and an AuGe alloy or the like is deposited as the n-type electrode 8 by vapor deposition or the like. The composition of the active layer can be changed depending on the desired laser oscillation wavelength.
第２の実施例は、第１の実施例と同じ組成であって、活
性層３の厚さを１００Ａ程度と薄くしたものである。The second example has the same composition as the first example, but the thickness of the active layer 3 is reduced to about 100A.
第３の実施例を第１図および第２図を参照して説明する
。第２図は第３の実施例における層の形成方向の格子定
数プロファイルを示す。第３の実施例の製造におい、ｎ
−５ｔ基板上に組成を連続的に変えた１μ市厚のｎ−Ｇ
ａ、Ｉｎ＋□Ｐ層（Ｏ≦ｘ≦１）を成長する。Ｓｔ基板
に接する部分をＧａＰとし、連続的にＩｎの量を増し、
Ｉｎ組成１−ｘ−０，１まで増やす。この上にＧａｏ７
Ｉｎｏ、３Ｐと格子整合するｎ−（ＡΩｏ２Ｇａｏ、ｓ
） ０．７ Ｉ ｎｏ、ｇ Ｐクラッド層を１μｍ成
長する。これは、Ｇａｏ、７ Ｉ ｎｏ、ｉ Ｐよりも
約８０ ｍｅＶエネルギギャップが大きい。次に厚さ１
００ のアンドープ活性層Ｇａ（１，５Ｉ ｎｏ、５
Ｐを成長する。さらにこの上にｐ−（Ａ１１ｏ２Ｇａｏ
、ｓ ） 、、、 Ｉ ｎ。、、 Ｐクラッド層を成長
させる。このあと、第１の実施例と同じ手順で第１図と
同様の素子構造をとる。A third embodiment will be described with reference to FIGS. 1 and 2. FIG. 2 shows the lattice constant profile in the layer formation direction in the third embodiment. In the production of the third embodiment, n
-1μ thickness n-G with continuously changing composition on 5t substrate
a. Grow an In+□P layer (O≦x≦1). The part in contact with the St substrate is made of GaP, and the amount of In is continuously increased.
Increase the In composition to 1-x-0.1. Gao7 on top of this
n-(AΩo2Gao, s
) 0.7 I no, g A P cladding layer is grown to a thickness of 1 μm. This is about 80 meV larger energy gap than Gao, 7 I no, i P. Then thickness 1
00 undoped active layer Ga(1,5I no,5
Grow P. Furthermore, p-(A11o2Gao
,s),,,I n. ,, Grow the P cladding layer. Thereafter, an element structure similar to that shown in FIG. 1 is obtained by following the same procedure as in the first embodiment.
以下に述べた第１〜第３の実施例において、結晶成長は
ＭＯＶｙＰＥ以外の方法、ＭＢＥ法、ＬＰＥ法、ＨＴ−
ＶＰＥ法でもよく、その方法によらず本発明は実現でき
る。また、各層の具体的な組成は、所望の発振波長に応
じて実施例の値に限らず各種の値にきめる。Ａｊ？組成
の増加による結晶品質の劣化と、格子不整合による結晶
品質の劣化がともに著しくならない最適な組成がある。In the first to third embodiments described below, crystal growth is performed using methods other than MOVyPE, MBE method, LPE method, HT-
The VPE method may be used, and the present invention can be realized regardless of the method. Further, the specific composition of each layer is not limited to the values of the embodiments, but can be determined to various values depending on the desired oscillation wavelength. Aj? There is an optimal composition in which both the deterioration of crystal quality due to an increase in composition and the deterioration of crystal quality due to lattice mismatch do not become significant.
第４の実施例を第３図に示す。第１〜第３の実施例によ
るレーザと受光素子および電気回路を集積化した模式的
平面図である。まず、ｎ−８ｔ基板９上に、５μｍ程度
の段差１５をつけ、レーザ１０を形成する領域のＳｔ基
板表面をエツチングなどにより削る。レーザを形成する
ための成長を全面に行う。ドライエツチング法などによ
りレーザ端面、側面を形成し、第３図のようにレーザ部
１０のみ残し、他を表面からとりさる。レーザの光が図
中矢印１４の方向に出射するように電流注入ストライプ
を形成する。続いて、Ｓｔ基板上に受光素子となるｐｉ
ｎフォトダイオード１１、フォトダイオード駆動回路１
２、レーザ駆動回路１３をイオン注入やフォトリングラ
フィ法を用いて形成する。こうして、ＡＤＧａｌｎＰ系
レーザ並びにＳｉ−受光素子および電気回路を１つのＳ
ｔ基板９の上に集積できる。A fourth embodiment is shown in FIG. FIG. 2 is a schematic plan view in which a laser, a light receiving element, and an electric circuit are integrated according to the first to third embodiments. First, a step 15 of about 5 .mu.m is formed on the n-8t substrate 9, and the surface of the St substrate in the region where the laser 10 is to be formed is removed by etching or the like. Growth to form the laser is performed on the entire surface. The laser end face and side face are formed by dry etching or the like, and as shown in FIG. 3, only the laser portion 10 is left and the other parts are removed from the surface. Current injection stripes are formed so that laser light is emitted in the direction of arrow 14 in the figure. Next, a pi layer that will become a light receiving element is placed on the St substrate.
n photodiode 11, photodiode drive circuit 1
2. The laser drive circuit 13 is formed using ion implantation or photolithography. In this way, the ADGalnP laser, the Si photodetector, and the electric circuit can be integrated into one S
It can be integrated on the t-substrate 9.
（発明の効果）
このように本発明の構造を採ることにより、ＡｐＧａ
Ｉ ｎＰ系材料において、高結晶品質を維持したまま、
低閾値でかつ良好な温度特性の可視光レーザが得られる
。特に発振波長が短くなったとき、この効果が大きい。(Effect of the invention) By adopting the structure of the present invention as described above, ApGa
In InP-based materials, while maintaining high crystal quality,
A visible light laser with a low threshold value and good temperature characteristics can be obtained. This effect is particularly significant when the oscillation wavelength becomes short.
また、Ｓｉの受光素子および電子回路と、ＡｐＧａｌｎ
Ｐ系レーザとが容易な製造工程でモノリシックに集積で
きる点は本発明の構造の半導体レーザの大きな利点であ
る。In addition, Si photodetector and electronic circuit, and ApGaln
A major advantage of the semiconductor laser having the structure of the present invention is that it can be monolithically integrated with a P-based laser through an easy manufacturing process.
第１図は本発明の第１及び第２の実施例を示す模式的斜
視図、第２図は本発明の第３の実施例における層形成方
向の格子定数プロファイルを示す図、第３図は本発明の
第４の実施例を示す図、第４図はＡ１１ＧａＩｎＰ系半
導体の格子定数とエネルギギャップの関係を示す図であ
る。
１・・・ｎ−８ｔ基板、２・・・ｎ−ＧａＰクラッド層
、３・・・アンドープＧ ａ ０．５５Ｉ ｎ ０．４
ＳＰ活性層、４・・・ｐ−ＧａＰクラッド層、５・・・
５ｉｎ２膜、６・・・電流注入ストライプ、７・・・ｐ
電極、８・・・ｎ電極。
０FIG. 1 is a schematic perspective view showing the first and second embodiments of the present invention, FIG. 2 is a diagram showing the lattice constant profile in the layer formation direction in the third embodiment of the present invention, and FIG. FIG. 4 is a diagram showing the fourth embodiment of the present invention, and is a diagram showing the relationship between the lattice constant and energy gap of an A11GaInP-based semiconductor. 1... n-8t substrate, 2... n-GaP cladding layer, 3... undoped Ga 0.55I n 0.4
SP active layer, 4...p-GaP cladding layer, 5...
5in2 film, 6... current injection stripe, 7...p
Electrode, 8...n electrode. 0
Claims (4)
＿ｙＰ（０≦ｘ≦１、０≦ｙ≦１）を活性層として、（
Ａｌ＿ｚＧａ＿１＿−＿ｚ）＿ｗＩｎ＿１＿−＿ｗＰ（
０≦ｚ≦１、０≦ｗ≦１）をクラッド層とするダブルヘ
テロ構造がＳｉ基板上に形成されてなることを特徴とす
る半導体レーザ。(1) (Al_xGa_1_-_x)_yIn_1_-
With _yP (0≦x≦1, 0≦y≦1) as the active layer, (
Al_zGa_1_-_z)_wIn_1_-_wP(
A semiconductor laser characterized in that a double heterostructure having a cladding layer of 0≦z≦1, 0≦w≦1 is formed on a Si substrate.
性層とし、ＧａＰをクラッド層とすることを特徴とする
請求項１に記載の半導体レーザ。(2) The semiconductor laser according to claim 1, characterized in that Ga_yIn_1_-_yP (0≦y≦1) is used as an active layer and GaP is used as a cladding layer.
する請求項１又は２に記載の半導体レーザ。(3) The semiconductor laser according to claim 1 or 2, wherein the active layer has a thickness of 200 Å or less.
Ｇａ＿１＿−＿ｖＰ（０≦ｖ≦１）の格子定数の値から
連続的または段階的にクラッド層の格子定数の値に近づ
ける層を有することを特徴とする請求項１乃至３に記載
の半導体レーザ。(4) Al_v between the Si substrate and the double heterostructure
4. The semiconductor laser according to claim 1, further comprising a layer whose lattice constant value approaches the value of the lattice constant of Ga_1_-_vP (0≦v≦1) continuously or stepwise to the value of the lattice constant of the cladding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2077790A JPH03225983A (en) | 1990-01-31 | 1990-01-31 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2077790A JPH03225983A (en) | 1990-01-31 | 1990-01-31 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03225983A true JPH03225983A (en) | 1991-10-04 |
Family
ID=12036579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2077790A Pending JPH03225983A (en) | 1990-01-31 | 1990-01-31 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03225983A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0918087A (en) * | 1995-06-27 | 1997-01-17 | Nec Corp | Multi-beam semiconductor laser device |
| JP2001127339A (en) * | 1999-10-25 | 2001-05-11 | Kyocera Corp | Semiconductor light emitting device |
-
1990
- 1990-01-31 JP JP2077790A patent/JPH03225983A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0918087A (en) * | 1995-06-27 | 1997-01-17 | Nec Corp | Multi-beam semiconductor laser device |
| JP2001127339A (en) * | 1999-10-25 | 2001-05-11 | Kyocera Corp | Semiconductor light emitting device |
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