JPH03227066A - Manufacture of schottky barrier diode - Google Patents
Manufacture of schottky barrier diodeInfo
- Publication number
- JPH03227066A JPH03227066A JP2264990A JP2264990A JPH03227066A JP H03227066 A JPH03227066 A JP H03227066A JP 2264990 A JP2264990 A JP 2264990A JP 2264990 A JP2264990 A JP 2264990A JP H03227066 A JPH03227066 A JP H03227066A
- Authority
- JP
- Japan
- Prior art keywords
- film
- opening
- polysilicon film
- schottky barrier
- barrier diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 229920005591 polysilicon Polymers 0.000 claims abstract description 21
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 5
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 3
- 229910021339 platinum silicide Inorganic materials 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はショットキバリアダイオードの製造方法に関し
、特にバイポーラ集積回路用のショットキバリアダイオ
ードの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a Schottky barrier diode, and more particularly to a method for manufacturing a Schottky barrier diode for bipolar integrated circuits.
バイポーラＲＡＭやＴＴＬなどのバイポーラ集積回路に
おいて、レベルシフトや基準電圧発生のためにショット
キバリアダイオードが組み込まれている。Schottky barrier diodes are incorporated in bipolar integrated circuits such as bipolar RAM and TTL for level shifting and reference voltage generation.
ここで用いられるショットキバリアダイオードはＮ型シ
リコン基板の表面に堆積された絶縁膜に開口を形成し、
金属シリサイド層からなるショットキ電極を形成して素
子部が完成する。The Schottky barrier diode used here forms an opening in an insulating film deposited on the surface of an N-type silicon substrate.
A Schottky electrode made of a metal silicide layer is formed to complete the element section.
しかしこの構造では、ショットキバリア接合周辺部に電
界が集中して逆耐圧劣化が生じ易く、−旦逆耐圧劣化が
生じると逆飽和電流の増加、順方向電流（ＩＦ値）の変
動などの不可逆変化が生じる。However, in this structure, the electric field concentrates around the Schottky barrier junction, which tends to cause deterioration of the reverse breakdown voltage. occurs.
そのために開口部周辺にＰ型ガードリングを形成して、
Ｐ−Ｎ接合で電界集中を防ぐ方法が用られている。For this purpose, a P-type guard ring is formed around the opening.
A method is used to prevent electric field concentration at a P-N junction.
従来技術によるガードリングの形成方法について、第２
図を参照して説明する。Regarding the method of forming a guard ring using the conventional technology, the second
This will be explained with reference to the figures.
Ｎ型シリコン基板１の表面に酸化シリコン膜２を形成し
、フォトレジスト１０をマスクとして硼素をイオン注入
して、ガードリングとなるＰ型拡散層６を形成する。A silicon oxide film 2 is formed on the surface of an N-type silicon substrate 1, and boron ions are implanted using the photoresist 10 as a mask to form a P-type diffusion layer 6 that will serve as a guard ring.
従来技術によるショットキバリアダイオードにおいては
、フォトリソグラフィを用いているのでガードリングの
面積が大きくなる。In the Schottky barrier diode according to the prior art, since photolithography is used, the area of the guard ring becomes large.
そのためＰ−Ｎ接合容量が寄生容量として高速化の障害
になり、過大なチップ面積を要するため高集積化の障害
になっている。Therefore, the PN junction capacitance acts as a parasitic capacitance and becomes an obstacle to increasing speed, and requires an excessively large chip area, which becomes an obstacle to increasing integration.
動作領域として１０×１０μｍ２のショットキバリアダ
イオードが必要なとき、幅０．５μｍのガードリングを
形成しようとすると、フォトリソグラフィーの位置合せ
精度とエツチング精度と合せて片側０，５μｍとして、
（０，５＋１０＋ｏ、５）ｘ （０，５＋１ｏ＋０．５
）＝１２１μｍ２
と動作領域の２割増しの開口面積が必要になり、ガード
リングの面積は１２１〜１００＝２１μｍ２となる。When a Schottky barrier diode of 10 x 10 μm2 is required as the operating area, if you are trying to form a guard ring with a width of 0.5 μm, one side will be 0.5 μm in combination with the alignment accuracy of photolithography and etching accuracy, (0.5 + 10 + o ,5)x (0,5+1o+0.5
)=121 μm2, which is 20% larger than the operating area, and the area of the guard ring is 121 to 100=21 μm2.
本発明のショットキバリアダイオードは、Ｎ型シリコン
基板の表面に、第１の絶縁膜、ＢＳＧ膜、第２の絶縁膜
を順次堆積する工程と、積層膜に開口を設けてから、ポ
リシリコン膜を堆積して熱処理することにより、ＢＳＧ
膜を拡散源として開口部側壁のポリシリコン膜に硼素を
拡散する工程と、硼素が拡散されていないポリシリコン
膜を選択エツチングしてから、熱処理して開口部のポリ
シリコン膜を拡散源として基板にＰ型拡散層を形成する
工程と、開口部に金属シリサイド層を含む金属電極を形
成する工程から構成されている。The Schottky barrier diode of the present invention includes a step of sequentially depositing a first insulating film, a BSG film, and a second insulating film on the surface of an N-type silicon substrate, and after forming an opening in the laminated film, a polysilicon film is deposited. By depositing and heat treating, BSG
A process of diffusing boron into the polysilicon film on the side wall of the opening using the film as a diffusion source, selectively etching the polysilicon film in which boron has not been diffused, and then heat-treating the polysilicon film on the opening as a diffusion source. The process consists of a step of forming a P-type diffusion layer in the opening, and a step of forming a metal electrode including a metal silicide layer in the opening.
本発明の一実施例について、第１図（ａ）〜（ｅ）を参
照して説明する。An embodiment of the present invention will be described with reference to FIGS. 1(a) to (e).
はじめに第１図（ａ）に示すように、９００〜１０００
℃のスチーム酸化を行なうことにより、シリコン基板１
の表面に厚さ５００〜１０００人の酸化シリコン膜２を
形成し、有機ボロンガラス溶液をスピンコードしてから
８００〜９００℃の熱処理をして、厚さ５００〜１００
０人のＢＳＧ膜３を形成し、ＣＶＤ法により厚さ５００
〜１０００人の窒化シリコン膜４を形成する。First, as shown in Figure 1(a), 900 to 1000
By performing steam oxidation at ℃, silicon substrate 1
A silicon oxide film 2 with a thickness of 500 to 1000 nm is formed on the surface of the film, and after spin-coding an organic boron glass solution, heat treatment is performed at 800 to 900°C to form a silicon oxide film 2 with a thickness of 500 to 1000 nm.
A BSG film 3 with a thickness of 500 mm was formed using the CVD method.
~1000 silicon nitride films 4 are formed.
つぎに第１図（ｂ）に示すように、フォトリソグラフィ
により開口を形成し、厚さ２０００人のポリシリコン膜
を形成してから、熱処理して開口部側壁のポリシリコン
膜全体に硼素を拡散して、Ｐ型ポリシリコン膜５ａと、
硼素が拡散されていないノンドープポリシリコン膜５ｂ
とを形成する。Next, as shown in Figure 1(b), an opening is formed by photolithography, a polysilicon film with a thickness of 2000 nm is formed, and then boron is diffused into the entire polysilicon film on the side wall of the opening by heat treatment. Then, a P-type polysilicon film 5a,
Non-doped polysilicon film 5b in which boron is not diffused
and form.
つぎに第１図（ｃ）に示すように、ＫＯＨやヒドラジン
などのアルカリ溶液で、ノンドープポリシリコン膜５ｂ
を選択エツチングしてから９００〜１０００℃の窒素雰
囲気中で熱処理を行ない、ガードリングとなるＰ型拡散
層６を形成する。Next, as shown in FIG. 1(c), the non-doped polysilicon film 5b is coated with an alkaline solution such as KOH or hydrazine.
After selective etching, heat treatment is performed in a nitrogen atmosphere at 900 to 1000 DEG C. to form a P-type diffusion layer 6 that will serve as a guard ring.
つぎに第１図（ｄ）に示すように、スパッタ法により厚
さ２００〜５００人の白金を堆積し、４００〜６００℃
の熱処理で白金シリサイド層７を形成してから、反応し
ていない白金をＨＮＯ３：ＨＣρ＝１：３の王水でエツ
チングする。Next, as shown in FIG. 1(d), platinum was deposited to a thickness of 200 to 500 layers by sputtering and heated at 400 to 600°C.
After the platinum silicide layer 7 is formed by heat treatment, unreacted platinum is etched with aqua regia of HNO3:HCρ=1:3.
つぎに第１図（ｅ）に示すように、バリアとしてのＴｉ
−Ｗ膜８とアルミニウム電極９とを形成して、ショット
キバリアダイオードの素子部が完成する。Next, as shown in Fig. 1(e), Ti is used as a barrier.
-W film 8 and aluminum electrode 9 are formed to complete the element portion of the Schottky barrier diode.
本発明において、開口部に対して自己整合的（セルファ
ライン）に狭いガードリングを形成することができる。In the present invention, a narrow guard ring can be formed in a self-aligned manner (self-alignment) with respect to the opening.
動作領域として１０×１０μｍ２のショットキバリアダ
イオードが必要なとき、ポリシリコンの膜厚だけ拡げれ
ばいいので、
（１０＋０．５）Ｘ （１０＋０．５）＝１１０２５μ
ｍ２
となり、ガードリングの面積は１１０．２５−１００＝
１０．２５μｍ２となり、従来技術の場合の占有面積の
半分まで削減される。When a Schottky barrier diode of 10 x 10 μm2 is required as the operating area, it is only necessary to increase the thickness of the polysilicon film, so (10 + 0.5) x (10 + 0.5) = 11025 μ
m2, and the area of the guard ring is 110.25-100=
The area is 10.25 μm2, which is reduced to half of the area occupied by the conventional technology.
このようにして、高速化、高集積化に適したバイポーラ
集積回路用のショットキバリアダイオードの形成が可能
になった。In this way, it has become possible to form a Schottky barrier diode for bipolar integrated circuits that is suitable for high speed and high integration.
第１図（ａ）〜（ｅ）は本発明の一実施例を製造工程順
に示す断面図、第２図は従来技術によるショットキバリ
アダイオードのガードリングの製造工程を示す断面図で
ある。
１・・・Ｎ型シリコン基板、２・・・酸化シリコン膜、
３・・・ＢＳＧ膜、４・・・窒化シリコン膜、５ａ・・
・Ｐ型ポリシリコン膜、５ｂ・・・ノンドープポリシリ
コン膜、６・・・Ｐ型拡散層、７・・・白金シリサイド
層、８・・・Ｔｉ−Ｗ膜、９・・・アルミニウム電極、
１０フオトレジスト。FIGS. 1A to 1E are cross-sectional views showing an embodiment of the present invention in the order of manufacturing steps, and FIG. 2 is a cross-sectional view showing the manufacturing process of a guard ring for a Schottky barrier diode according to the prior art. 1... N-type silicon substrate, 2... silicon oxide film,
3...BSG film, 4...Silicon nitride film, 5a...
- P-type polysilicon film, 5b... Non-doped polysilicon film, 6... P-type diffusion layer, 7... Platinum silicide layer, 8... Ti-W film, 9... Aluminum electrode,
10 photo resist.
Claims (1)
第２の絶縁膜を順次堆積する工程と、前記積層膜に開口
を設けて前記基板の一部を露出させる工程と、ポリシリ
コン膜を堆積して熱処理することにより、前記ＢＳＧ膜
を拡散源として前記開口部側壁の前記ポリシリコン膜に
硼素を拡散する工程と、硼素が拡散されていない前記ポ
リシリコン膜を選択エッチングする工程と、熱処理によ
つて前記開口部のポリシリコン膜を拡散源として前記基
板にＰ型拡散層を形成する工程と、前記開口部に金属シ
リサイド層を含む金属電極を形成することを特徴とする
ショットキバリアダイオードの製造方法。A first insulating film, a BSG film,
By sequentially depositing a second insulating film, forming an opening in the laminated film to expose a part of the substrate, and depositing and heat-treating a polysilicon film, the BSG film is used as a diffusion source. A step of diffusing boron into the polysilicon film on the side wall of the opening, a step of selectively etching the polysilicon film in which boron is not diffused, and a heat treatment using the polysilicon film of the opening as a diffusion source. A method for manufacturing a Schottky barrier diode, comprising the steps of forming a P-type diffusion layer on a substrate, and forming a metal electrode including a metal silicide layer in the opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2264990A JPH03227066A (en) | 1990-01-31 | 1990-01-31 | Manufacture of schottky barrier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2264990A JPH03227066A (en) | 1990-01-31 | 1990-01-31 | Manufacture of schottky barrier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03227066A true JPH03227066A (en) | 1991-10-08 |
Family
ID=12088698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2264990A Pending JPH03227066A (en) | 1990-01-31 | 1990-01-31 | Manufacture of schottky barrier diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03227066A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5696025A (en) * | 1996-02-02 | 1997-12-09 | Micron Technology, Inc. | Method of forming guard ringed schottky diode |
| WO1999062124A1 (en) * | 1998-05-26 | 1999-12-02 | Siemens Aktiengesellschaft | Method for producing schottky diodes |
| KR100317606B1 (en) * | 1999-06-03 | 2001-12-22 | 곽정소 | Method for fabricating Schottky barrier diode |
| US7307329B2 (en) * | 2003-07-08 | 2007-12-11 | Infineon Technologies Ag | Electronic device with guard ring |
-
1990
- 1990-01-31 JP JP2264990A patent/JPH03227066A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5696025A (en) * | 1996-02-02 | 1997-12-09 | Micron Technology, Inc. | Method of forming guard ringed schottky diode |
| WO1999062124A1 (en) * | 1998-05-26 | 1999-12-02 | Siemens Aktiengesellschaft | Method for producing schottky diodes |
| KR100317606B1 (en) * | 1999-06-03 | 2001-12-22 | 곽정소 | Method for fabricating Schottky barrier diode |
| US7307329B2 (en) * | 2003-07-08 | 2007-12-11 | Infineon Technologies Ag | Electronic device with guard ring |
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