JPH0322905Y2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Field of Application] This invention relates to an X-ray irradiation device with improved exposure methods, X-ray generation methods, etc. in X-ray exposure.

[Conventional technology]

FIG. 2 shows an example of a conventional X-ray irradiation device, and in the figure, 1 is an electron beam source (not shown).
4 is the X-ray, 3 is the electron beam 1
A target is irradiated to generate X-rays 4, 6 is a mask, and 7 is a wafer.

In the conventional X-ray irradiation equipment using the proximity type exposure method, an electron beam 1 accelerated to several tens of kilovolts is irradiated onto a target 3 at a certain angle to generate X-rays 4, and the generated X-rays 4 with a spread are The resist on the wafer 7 was irradiated through the mask 6.

[Problem that the invention attempts to solve]

Conventional X-ray irradiation equipment is configured as described above, but because the wafer is exposed using spread X-rays from a point light source, there is a problem that the angle at which the resist pattern is cut is not constant. .
Furthermore, since the electron beam hits the same circumference of the rotating target, there are problems such as an increase in the temperature of the target.

This idea was made in order to solve the above problems, and the aim was to create an X-ray irradiation device that could prevent the temperature of the target from rising and also keep the cutting angle of the resist pattern constant. purpose.

[Means for solving problems]

The movable light source type X-ray irradiation device according to this invention allows only a part of the X-rays emitted from the target to pass through the aperture, and moves the passed X-rays relative to the mask and the wafer. In particular, the electron beam irradiated toward the target is deflected by a deflection electrode, and the aperture is moved parallel to the mask in synchronization with the deflection of the electron beam.

[Effect]

In this invention, the electron beam irradiated toward the target is deflected by the deflection electrode, and the aperture is moved in synchronization with the deflection, so that local heating of the target by the electron beam can be prevented, and moreover, Since the wafer can be exposed to X-rays in a fixed direction that have passed through the aperture, the cutting angle of the resist pattern on the wafer can be made constant.

〔Example〕

An embodiment of this invention will be described below with reference to the drawings. FIG. 1 shows a movable light source type X-ray irradiation device according to an embodiment of the present invention. In the figure, reference numeral 1 denotes an electron beam for X-ray excitation that is irradiated from an electron beam source (not shown) toward a target. , 2 is a deflection electrode for deflecting the electron beam 1, 4 is an X-ray, and 3 is a target that is irradiated with the electron beam 1 and thereby generates an X-ray 4, which is rotating at high speed. 6 is a mask, 7
5 is a wafer, and 5 is an aperture that allows only a portion of the X-rays 4 to pass through, and this aperture moves parallel to the mask 6 in synchronization with the deflection of the electron beam 1 by the deflection electrode 2.

Next, the effects will be explained. The electron beam 1 is deflected by a deflection electrode 2 and irradiated onto a target 3. Therefore, the electron beam 1 is not irradiated only on the same circumference of the target 3, and the target 3 is not locally heated by the electron beam 1. When the target 3 is irradiated with the electron beam 1, it diverges and emits X-rays 4. A portion of the X-rays 4 passes through the aperture 5 and has a fixed direction.
At this time, the aperture 5 moves parallel to the mask 6 in synchronization with the deflection of the electron beam 1, so that the X-rays are always incident on the entire surface of the wafer 6 at a constant angle. Become.

In this way, with the apparatus of this embodiment, the entire surface of the wafer can be exposed using X-rays that always have a constant incident angle on the wafer, so the cutting angle of the resist pattern on the wafer can be made constant. Pattern blur can be prevented. Furthermore, since the electron beam is deflected by the deflection electrode, it is possible to prevent the temperature of the target from increasing due to local heating by the electron beam.

[Effect of idea]

As described above, according to this invention, some of the X-rays emitted from the target pass through the aperture and have a fixed direction, and the wafer is exposed using the X-rays. The entire surface of the wafer can be exposed to X-rays that always have a constant incident angle with respect to the resist pattern, and the cutting angle of the resist pattern on the wafer can be kept constant, thereby preventing pattern blurring. Furthermore, the electron beam irradiated toward the target is deflected by the deflection electrode, and the aperture is moved in synchronization with the deflection, which has the effect of preventing temperature increases due to local heating of the target. .

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a movable light source type X-ray irradiation device according to an embodiment of this invention, and FIG. 2 is a schematic diagram of a conventional X-ray irradiation device. In the figure, 1 is an electron beam, 2 is a deflection electrode, 3 is a target, 4 is an X-ray, 5 is an aperture, 6 is a mask, and 7 is a wafer. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Scope of Claim for Utility Model Registration] In an X-ray irradiation device that irradiates X-rays onto a wafer through a mask, an electron beam source that generates an electron beam, and a deflector that deflects the electron beam from the electron beam source. an electrode; a target that is irradiated with the electron beam that has passed through the deflection electrode and thereby generates X-rays; an aperture that allows only a portion of the X-rays that are diverged and emitted from the target to pass through; and the deflection electrode. an aperture moving means for moving the aperture in parallel to the fixed mask and wafer, respectively, in synchronization with the deflection of the electron beam by the movable light source type X-ray irradiation apparatus.