JPH03232958A - Production of laminated member coated with thin ti-type film - Google Patents
Production of laminated member coated with thin ti-type filmInfo
- Publication number
- JPH03232958A JPH03232958A JP2816890A JP2816890A JPH03232958A JP H03232958 A JPH03232958 A JP H03232958A JP 2816890 A JP2816890 A JP 2816890A JP 2816890 A JP2816890 A JP 2816890A JP H03232958 A JPH03232958 A JP H03232958A
- Authority
- JP
- Japan
- Prior art keywords
- thin
- thin film
- base material
- film
- type film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000007733 ion plating Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910001069 Ti alloy Inorganic materials 0.000 claims abstract description 6
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 10
- 239000010408 film Substances 0.000 abstract description 10
- 238000005520 cutting process Methods 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 229910010038 TiAl Inorganic materials 0.000 abstract 1
- 229910010380 TiNi Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910000997 High-speed steel Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、各種の切削工具等に有用なＴｉ系薄膜被覆複
合部材の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a Ti-based thin film coated composite member useful for various cutting tools and the like.
［従来の技術］
例えば、切削上具としては工具鋼等からなる基材の表面
にＴｉＮ等の硬質のＴｉ系薄膜を被覆した複合部材が開
発されている。かかる複合部材は、基材に対してＴｉ系
薄膜が強固に密着されていることが要求される。[Prior Art] For example, as a cutting tool, a composite member has been developed in which the surface of a base material made of tool steel or the like is coated with a hard Ti-based thin film such as TiN. Such a composite member is required to have a Ti-based thin film firmly adhered to the base material.
このようなことから、従来ではアルゴンガス圧力１Ｏ−
２ｔｏｒｒ程度のチャンバ内で基材に負電圧を印加し、
基材表面をスパッタしてクリーニングした後、ＴｉＮ等
のＴｉ系薄膜を形成して複合部材を製造する方法、チャ
ンバ内で基ヰ４に約３００〜１２００■の負電圧を印加
し、るつぼからＴｉを蒸発させ、該蒸発領域にプラズマ
を照射した後、ＴｉＮ等のＴｉ系薄膜を形成して複合部
材を製造する方法、が開発されている。For this reason, in the past, argon gas pressure of 1O-
Applying a negative voltage to the base material in a chamber of about 2 torr,
After sputtering and cleaning the surface of the substrate, a Ti-based thin film such as TiN is formed to produce a composite member. A negative voltage of about 300 to 1200 μ is applied to the substrate in a chamber, and Ti is removed from the crucible. A method has been developed in which a Ti-based thin film such as TiN is formed after evaporating the evaporation region and irradiating the evaporation region with plasma to produce a composite member.
［発明が解決しようとする課題］
しかしながら、上述したいずれの方法もＴｉ系薄膜のス
クラッチ臨界荷重が０．５〜１．５ｋｇｆ’程度で、こ
れ以上増大させることができない。この理由は、基材表
面のクリーニングを行うことができるものの、ＴｉＮ等
のＴｉ系薄膜の熱収縮応力を基材のみで十分に緩和でき
ないためであると考えられる。[Problems to be Solved by the Invention] However, in any of the above-mentioned methods, the scratch critical load of the Ti-based thin film is approximately 0.5 to 1.5 kgf', and cannot be increased any further. The reason for this is thought to be that although the surface of the base material can be cleaned, the heat shrinkage stress of the Ti-based thin film such as TiN cannot be sufficiently alleviated by the base material alone.
本発明は、上記従来の課題を解決するためになされたも
ので、基材に対して密着性の高いＴｉ系薄膜を形成した
Ｔｉ系薄膜被覆複合部材を製造し得るｈ法を提供しよう
とするものである。The present invention has been made to solve the above-mentioned conventional problems, and aims to provide a method capable of manufacturing a Ti-based thin film-coated composite member in which a Ti-based thin film with high adhesiveness is formed on a base material. It is something.
［課題を解決するための手段］
本発明は、基材表面にイオンプレーティング法によりＴ
ｉ合金又はＴｉセラミックスからなるＴｉ系薄膜を成膜
する前、前記基材表面にイオンプレーティング法により
厚さ ０．５μｍ以上のＴｉ薄膜を中間層として成膜す
ることを特徴とするＴｉ系薄膜被覆複合部材の製造方法
である。[Means for Solving the Problems] The present invention provides T
A Ti-based thin film characterized in that, before forming the Ti-based thin film made of i-alloy or Ti ceramics, a Ti thin film with a thickness of 0.5 μm or more is formed as an intermediate layer on the surface of the base material by an ion plating method. This is a method for manufacturing a coated composite member.
上記基材としては、例えばＳＵＳ、ハイスなどの工具鋼
−９を挙げることができる。Examples of the base material include tool steel-9 such as SUS and high speed steel.
上記Ｔｉ合金としては、例えばＴ ｉ Ａｌ１ 。An example of the Ti alloy is TiAl1.
Ｔ１Ｎｉを、Ｔｉセラミックスとしては例えばＴｉＮ、
Ｔｉｃ等を挙げることができる。T1Ni, Ti ceramics such as TiN,
Tic and the like can be mentioned.
上記Ｔｉ薄膜の厚さを限定した理由は、その厚さを０．
５μｍ未満にするとＴｉ系薄膜の圧縮応力緩和作用が不
十分となり、Ｔｉ系薄膜の密着性を向上できなくなる。The reason for limiting the thickness of the Ti thin film is that the thickness is 0.
When the thickness is less than 5 μm, the compressive stress relaxation effect of the Ti-based thin film becomes insufficient, making it impossible to improve the adhesion of the Ti-based thin film.
なお、Ｔｉ薄膜の厚さの上限については厚くし過ぎると
、Ｔｉ薄膜によるＴｉ系薄膜の圧縮応力緩和作用が変化
しないばかりか、複合部材としての高硬質性が損なわれ
る恐れがあること、５．０μｍ程度とすることが望まし
い。Regarding the upper limit of the thickness of the Ti thin film, if it is made too thick, not only the compressive stress relaxation effect of the Ti thin film by the Ti thin film will not change, but also the high rigidity as a composite member may be impaired; 5. It is desirable to set it to about 0 μm.
上記Ｔｉ薄膜の成膜に際しては、基材に−４００〜−１
０００Ｖの負電圧を印加することが望ましい。When forming the above Ti thin film, the base material has a temperature of -400 to -1
It is desirable to apply a negative voltage of 000V.
この理由は、−４００Ｖ未満の低い負電圧を印加すると
基材に対してＴｉ薄膜を高い密着力で成膜するのが困難
となり、一方−１０００Ｖを越える高い負電圧を印加す
ると異状放電を起こすか又はＴｉで基材をエツチングし
て薄膜の形成が困難となるからである。The reason for this is that applying a low negative voltage of less than -400V makes it difficult to form a Ti thin film with high adhesion to the substrate, while applying a high negative voltage of more than -1000V may cause abnormal discharge. Alternatively, etching the base material with Ti makes it difficult to form a thin film.
［作用コ
本発明によれば、基材表面にイオンプレーティング法に
よりＴｉ合金又はＴｉセラミックスからなるＴｉ系薄膜
を成膜する前、前記基材表面にイオンプレーティング法
により ０．５μｍ以上の特定の厚さのＴｉ薄膜を中間
層として成膜することによって、Ｔｉ系薄膜の圧縮応力
を緩和すると共に、親和性も増加させて該Ｔｉ系薄膜を
高い密着力で形成し、スクラッチ臨界荷重を向上したＴ
ｉ系薄膜被覆複合部祠を製造できる。[Function] According to the present invention, before forming a Ti-based thin film made of a Ti alloy or Ti ceramics on the surface of a base material by an ion plating method, a specific film of 0.5 μm or more is formed on the surface of the base material by an ion plating method. By depositing a Ti thin film with a thickness of 100 mL as an intermediate layer, the compressive stress of the Ti-based thin film is alleviated, and the affinity is also increased to form the Ti-based thin film with high adhesion and improve the scratch critical load. T did
It is possible to manufacture an i-based thin film coated composite part shrine.
［実施例コ 以下、本発明の実施例を第１図を参照して説明する。[Example code] Embodiments of the present invention will be described below with reference to FIG.
第１図は、本実施例で使用するイオンプレーティング装
置を示す概略断面図である。図中の１は、真空チャンバ
であり、このチャンバｌの上部側壁には該チャンバ１内
を所定の真空度に維持するための真空ポンプと連通ずる
排気管（図示せず）が設けられている。また、図中の２
は蒸着源である。FIG. 1 is a schematic cross-sectional view showing the ion plating apparatus used in this example. 1 in the figure is a vacuum chamber, and an exhaust pipe (not shown) is provided on the upper side wall of the chamber 1 to communicate with a vacuum pump for maintaining the inside of the chamber 1 at a predetermined degree of vacuum. . Also, 2 in the diagram
is the deposition source.
この蒸着源２は、前記チャンバＩの底部に設置されたル
ツボ３と、前記チャンバ１の下部側壁に設けられ、前記
ルツボ３に電子ビームを照射するための電子銃４と、前
記ルツボ３の上方付近に配置され、前記電子銃４からの
電子ビームを偏向させて前記ルツボ３内の蒸着材料に照
射するための偏向コイル（図示せず）とから構成されて
いる。The vapor deposition source 2 includes a crucible 3 installed at the bottom of the chamber I, an electron gun 4 installed on the lower side wall of the chamber 1 for irradiating the crucible 3 with an electron beam, and an electron gun 4 located above the crucible 3. It is comprised of a deflection coil (not shown) placed nearby for deflecting the electron beam from the electron gun 4 and irradiating the vapor deposition material in the crucible 3.
また、前記チャンバ１内の外側壁にはプラズマ発生源と
してのプラズマ銃５が設けられており、該プラズマ銃５
の後部はアルゴン（Ａｒ）等の所定のガスを導入するた
めの導入管６が設けられている。なお、プラズマ銃５が
設けられた前記チャンバｌの側壁にはプラズマの絞り部
７が設けられている。また、前記プラズマ銃５の前記チ
ャンバｌとの連結付近の外側壁部分には、プラズマ銃５
から引出されたプラズマの拡散を防ぐための円筒状磁石
８が設けられている。前記プラズマ銃５の設置箇所とほ
ぼ同一平面上に位置するチャンバ１の側壁には対向電極
９が設けられている。この対向電極９は、接地されてい
る。Further, a plasma gun 5 as a plasma generation source is provided on the outer wall of the chamber 1.
An inlet pipe 6 for introducing a predetermined gas such as argon (Ar) is provided at the rear of the unit. Note that a plasma constriction section 7 is provided on the side wall of the chamber 1 in which the plasma gun 5 is provided. Further, on the outer wall portion of the plasma gun 5 near the connection with the chamber l, the plasma gun 5
A cylindrical magnet 8 is provided to prevent the plasma drawn from the plasma from spreading. A counter electrode 9 is provided on the side wall of the chamber 1 located on the same plane as the location where the plasma gun 5 is installed. This counter electrode 9 is grounded.
前記チャンバ１内のプラズマ生成領域近傍には基材を保
持するためのホルダ１０が配設されており、かつ該ホル
ダＩＯは回転軸ＩＩにより支持、吊下されている。前記
回転軸１１は、可変電源１２に接続されて負電圧が印加
されるようになっている。前記チャンバ１の側壁には、
Ｎ２ガスをチャンバ１内に供給するための供給管１３が
設けられている。A holder 10 for holding a base material is disposed near the plasma generation region in the chamber 1, and the holder IO is supported and suspended by a rotating shaft II. The rotating shaft 11 is connected to a variable power source 12 so that a negative voltage is applied thereto. On the side wall of the chamber 1,
A supply pipe 13 for supplying N2 gas into the chamber 1 is provided.
次に、上述したイオンプレーティング装置を用いてＴｉ
Ｎ薄膜被覆複合部材を製造する方法について説明する。Next, using the ion plating apparatus described above, Ti
A method for manufacturing an N thin film coated composite member will be described.
実施例１〜６
まず、ホルダ１０にハイス（ＳＫＨ）からなる板状の基
祠１４を保持し、蒸着源２のルツボ３内にＴｉ塊片を収
容した後、図示しない真空ポンプを作動して真空チャン
バ１内の大気を排気管を通して排気し、チャンバ Ｉ内
を１Ｏ−６Ｌｏｒｒ台にした後、アルゴンガスを導入し
て５．ＯＸ １Ｏ−３Ｌｏｒｒの真空度とした。つづい
て、可変電源１２から回転軸ＩＩ及びホルダｌＯを通し
て基材１４に−５００〜−８００ｖの負電圧を印加しな
がら、電子銃４から電子ビームを放出し、偏向コイルに
より該電子ビームをルツボ３内に収容したＴｉ塊片に照
射して溶融、蒸発させる。同時に、プラズマ銃５にアル
ゴンを供給し、該プラズマ銃５よりプラズマを生成し、
該プラズマ銃５に対向して配置され、かつ接地された対
向電極９によりプラズマ１５をチャンバｌ内に絞り部７
を通して引き出し、前記蒸着源２により蒸気化されたＴ
ｉをプラズマ１５内を上昇する過程でイオン化すること
により、下記第１表に示す厚さが０．５μｍ、 １．
０μｍｓ １．５μｍｓ ２．０μｍ１３．０μｍ
、 ４．０１ｔ ｍのＴｉ層を基材１４上にそれぞ
れ成膜した。次いで、供給管１３からＮ２ガスをチャン
バｌ内に導入して厚さ ４μｍのＴｉＮ薄膜を成膜して
６種の複合部材を製造した。Examples 1 to 6 First, a plate-shaped base 14 made of high-speed steel (SKH) was held in the holder 10, and a Ti lump was housed in the crucible 3 of the evaporation source 2, and then a vacuum pump (not shown) was activated. After exhausting the atmosphere inside the vacuum chamber 1 through the exhaust pipe and bringing the inside of the chamber I to the level of 10-6 Lorr, argon gas is introduced.5. The degree of vacuum was OX 1O-3Lorr. Subsequently, while applying a negative voltage of -500 to -800v from the variable power source 12 to the base material 14 through the rotation axis II and the holder lO, an electron beam is emitted from the electron gun 4, and the electron beam is directed to the crucible 3 by the deflection coil. The Ti lumps housed inside are irradiated to melt and evaporate. At the same time, argon is supplied to the plasma gun 5 to generate plasma from the plasma gun 5,
A counter electrode 9 disposed opposite the plasma gun 5 and grounded directs the plasma 15 into the chamber l through the constriction section 7.
T vaporized by the vapor deposition source 2
By ionizing i in the process of rising in the plasma 15, the thickness shown in Table 1 below is 0.5 μm; 1.
0μms 1.5μms 2.0μm13.0μm
, 4.01 tm Ti layers were formed on the base material 14, respectively. Next, N2 gas was introduced into the chamber 1 from the supply pipe 13 to form a TiN thin film with a thickness of 4 μm, thereby producing six types of composite members.
比較例
中間層としてのＴｉ層を暴利表面に予め成膜しないで、
実施例１と同様な方法により複合部材を製造した。Comparative Example A Ti layer as an intermediate layer was not formed on the surface of the profiteer in advance,
A composite member was manufactured in the same manner as in Example 1.
本実施例１〜６及び比較例の各複合部材の表面に被覆さ
れたＴｉＮ薄膜についてスクラッチ臨界荷重及びビッカ
ース硬度を測定した。その結果を下記第１表に示した。The scratch critical load and Vickers hardness of the TiN thin film coated on the surface of each composite member of Examples 1 to 6 and Comparative Example were measured. The results are shown in Table 1 below.
第
表
上記第１表から明らかなように０．５μｍ以上の厚さの
Ｔｉ層を中間層として介在した本実施例１〜６の複合部
材はＴｉ層を介在させない比較例の複合部材に比べてス
クラッチ臨界荷重が極めて改善されていることがわかる
。特に、比較例の複合部材ではＴｉＮ薄膜の剥離が頻繁
に起こったが、本実施例１〜６の複合部材ではＴｉＮ薄
膜の剥離が皆無であった。また、本実施例１〜６の複合
部材ではビッカース硬度がＴｉ層を介在しない比較例の
複合部材と殆ど遜色のない値を示すことがわかる。Table 1 As is clear from Table 1 above, the composite members of Examples 1 to 6 in which a Ti layer with a thickness of 0.5 μm or more is interposed as an intermediate layer are superior to the composite members of Comparative Examples in which no Ti layer is interposed. It can be seen that the scratch critical load has been significantly improved. In particular, in the composite members of Comparative Examples, peeling of the TiN thin film occurred frequently, but in the composite members of Examples 1 to 6, there was no peeling of the TiN thin film. Further, it can be seen that the Vickers hardness of the composite members of Examples 1 to 6 is almost comparable to that of the composite member of the comparative example in which no Ti layer is interposed.
［発明の効果］
以上詳述した如く、本発明によれば特定の厚さのＴ１薄
膜を中間層として成膜することによって、基材に対する
Ｔｉ系薄膜の密着力を改善して、スクラッチ臨界荷重を
向上でき、切削工具等の高硬度部祠として好適なＴｉ系
薄膜被覆複合部材の製造方法を提供できる。[Effects of the Invention] As detailed above, according to the present invention, by forming a T1 thin film with a specific thickness as an intermediate layer, the adhesion of the Ti-based thin film to the substrate is improved, and the scratch critical load is improved. It is possible to provide a method for manufacturing a Ti-based thin film-coated composite member that can improve the hardness and is suitable for use as a high-hardness part chassis for cutting tools and the like.
第１図は本発明の実施例で用いたイオンプレーティング
装置の概略断面図である。
■・・・真空チャンバ、２・・・蒸着源、３・・・ルツ
ボ、５・・・プラズマ銃、９・・・対向電極、１０・・
・ホルダ、１４・・・基材。FIG. 1 is a schematic cross-sectional view of an ion plating apparatus used in an example of the present invention. ■... Vacuum chamber, 2... Evaporation source, 3... Crucible, 5... Plasma gun, 9... Counter electrode, 10...
-Holder, 14...Base material.
Claims (1)
ＴｉセラミックスからなるＴｉ系薄膜を成膜する前、前
記基材表面にイオンプレーティング法により厚さ０．５
μｍ以上のＴｉ薄膜を中間層として成膜することを特徴
とするＴｉ系薄膜被覆複合部材の製造方法。Before forming a Ti-based thin film made of Ti alloy or Ti ceramics on the surface of the base material by ion plating method, the base material surface is coated with a thickness of 0.5 cm by ion plating method.
A method for manufacturing a Ti-based thin film-coated composite member, characterized by forming a Ti thin film of μm or more as an intermediate layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2816890A JPH03232958A (en) | 1990-02-09 | 1990-02-09 | Production of laminated member coated with thin ti-type film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2816890A JPH03232958A (en) | 1990-02-09 | 1990-02-09 | Production of laminated member coated with thin ti-type film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03232958A true JPH03232958A (en) | 1991-10-16 |
Family
ID=12241213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2816890A Pending JPH03232958A (en) | 1990-02-09 | 1990-02-09 | Production of laminated member coated with thin ti-type film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03232958A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5626920A (en) * | 1991-10-04 | 1997-05-06 | Tulip Memory Systems, Inc. | Method for coating metal disc substrates for magnetic-recording media |
| JP2009155698A (en) * | 2007-12-27 | 2009-07-16 | Mitsubishi Materials Corp | Film forming method and apparatus |
-
1990
- 1990-02-09 JP JP2816890A patent/JPH03232958A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5626920A (en) * | 1991-10-04 | 1997-05-06 | Tulip Memory Systems, Inc. | Method for coating metal disc substrates for magnetic-recording media |
| JP2009155698A (en) * | 2007-12-27 | 2009-07-16 | Mitsubishi Materials Corp | Film forming method and apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107022761A (en) | Composite thick film and its film plating process based on DLC film | |
| JPS58221271A (en) | Formation of film by ion plating method | |
| CN100554497C (en) | Method for Forming Superhard Amorphous Carbon Coatings in Vacuum | |
| JP2002030413A (en) | Thin film forming apparatus and thin film forming method | |
| CN111378947B (en) | Preparation method of diamond-like thin film | |
| CN100387754C (en) | A kind of preparation method of chromium-containing diamond-like carbon film | |
| JPS59126779A (en) | Method of roughening copper surface | |
| JPH03232958A (en) | Production of laminated member coated with thin ti-type film | |
| JPH07115213B2 (en) | Manufacturing method of metal composite | |
| JPH01129958A (en) | Formation of titanium nitride film having high adhesive strength | |
| JP3311387B2 (en) | Composite sputtering equipment | |
| JP3305786B2 (en) | Manufacturing method of permanent magnet with excellent corrosion resistance | |
| JP2001192206A (en) | Manufacturing method of amorphous carbon coated member | |
| JP3758248B2 (en) | Method for forming compound thin film | |
| US20020187349A1 (en) | Diamond-like carbon coating for optical media molds | |
| JPH0560904A (en) | Optical parts and production thereof | |
| JPH02156066A (en) | Method for cleaning base material | |
| JPH03166357A (en) | Production of metallic foil and metallic foil | |
| JPS60131964A (en) | Manufacture of film-coated body | |
| CN212925159U (en) | 12 inch physical vapor deposition titanium cavity heating base protection accessory | |
| JP2603919B2 (en) | Method for producing boron nitride film containing cubic boron nitride crystal grains | |
| JPS63195260A (en) | Coating material and its production | |
| JPS6320445A (en) | ion plating | |
| JPH01234559A (en) | Iron and steel member with coating film and production thereof | |
| JPH04350156A (en) | Thin film forming device |