JPH03238802A - Voltage-dependent nonlinear ceramic resistor - Google Patents
Voltage-dependent nonlinear ceramic resistorInfo
- Publication number
- JPH03238802A JPH03238802A JP2035131A JP3513190A JPH03238802A JP H03238802 A JPH03238802 A JP H03238802A JP 2035131 A JP2035131 A JP 2035131A JP 3513190 A JP3513190 A JP 3513190A JP H03238802 A JPH03238802 A JP H03238802A
- Authority
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- Prior art keywords
- cylinder
- electrode
- voltage
- hole
- varistor
- Prior art date
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Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電気機器、電子機器で発生する異常高電圧、ノ
イズ、静電気などから、機器の半導体及び回路を保護す
るためのコンデンサ特性とバリスタ特性を有する電圧依
存性非直線抵抗体磁器素子に関するものである。Detailed Description of the Invention: Industrial Application Field The present invention has capacitor characteristics and varistor characteristics for protecting semiconductors and circuits of equipment from abnormal high voltage, noise, static electricity, etc. generated in electrical equipment and electronic equipment. This invention relates to a voltage-dependent nonlinear resistance ceramic element.
従来の技術
従来、各種の電気機器、電子機器における異常高電圧の
東収、ノイズの除去、火花消去、静電気対策のために、
電圧依存性非直線抵抗特性を有するSiCバリスタや、
ZnO系ノ\リスタなどが使用されている。このような
バリスタの電圧−電流特性は近似的に次式のように表す
ことができる。Conventional technology Conventionally, various electrical and electronic devices have been used to control abnormally high voltages, eliminate noise, eliminate sparks, and take measures against static electricity.
SiC varistors with voltage-dependent nonlinear resistance characteristics,
ZnO type nolisters and the like are used. The voltage-current characteristics of such a varistor can be approximately expressed as in the following equation.
α
1= (V/C)
ここで、■は電流、■は電圧、Cはバリスタ固有の定数
、αは電圧−電流非直線指数である。α 1 = (V/C) Here, ■ is a current, ■ is a voltage, C is a constant specific to the varistor, and α is a voltage-current nonlinear index.
SiCバリスタのαは2〜7程度、ZnO系バリスタで
はαが50にもおよぶものがある。このようなバリスタ
は比較的高い電圧の吸収には優れた性能を有しているが
、誘電率が低く、固有の静電容量が小さいため、バリス
タ電圧以下の比較的低い電圧の吸収にはほとんど効果を
示さず、また誘電損失tanδが5〜10%と大きい。The α of SiC varistors is about 2 to 7, and the α of some ZnO-based varistors is as high as 50. Such varistors have excellent performance in absorbing relatively high voltages, but due to their low dielectric constant and small inherent capacitance, they have little ability to absorb relatively low voltages below the varistor voltage. It has no effect, and the dielectric loss tan δ is as large as 5 to 10%.
一方、これらの低電圧のノイズなどの除去には見かけの
誘電率が5X10’程度で、tanδが1%前後の半導
体コンデンサが利用されている。しかし、このような半
導体コンデンサは、サージなどによりある限度以上の電
圧または電流が印加されると静電容量が減少したり、破
壊したりしてコンデンサとしての機能を果たさなくなっ
たりする。On the other hand, semiconductor capacitors with an apparent dielectric constant of about 5×10' and a tan δ of about 1% are used to remove these low voltage noises. However, when a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the capacitance decreases or the semiconductor capacitor is destroyed, and the capacitor no longer functions as a capacitor.
そこで最近になってSrTiO3を主成分とし、バリス
タ特性とコンデンサ特性の両方の機能を有するものが開
発され、コンピュータなどの電子機器におけるIC,L
SIなどの半導体素子及び回路の保護や電子機器を相互
に継ぐケーブルやコネクタなどから侵入するノイズの除
去に利用されている。Therefore, recently, a product that has SrTiO3 as its main component and has both varistor and capacitor properties has been developed, and it
It is used to protect semiconductor elements and circuits such as SI, and to remove noise that enters from cables and connectors that interconnect electronic devices.
発明が解決しようとする課題
前記の5rTi03を主成分とするバリスタとコンデン
サの両方の機能を有する素子をコネクタなどから侵入す
るノイズの除去に使用する場合、素子の構造は一般的に
第3図のようになっている。第3図において、11及び
12は電極、13は素子である。Problems to be Solved by the Invention When an element having the functions of both a varistor and a capacitor, which mainly consists of 5rTi03, is used to remove noise entering from a connector etc., the structure of the element is generally as shown in Fig. 3. It looks like this. In FIG. 3, 11 and 12 are electrodes, and 13 is an element.
このような素子をコネクタに組み込むと一般的に第4図
のようになる。ところが第4図のような構成にすると、
ピン14と素子18の隙間に半田15の一部が流れ込み
、見掛は上の電極間距離が小さくなり、バリスタ電圧が
低くなり、またバリスタ電圧に極性がつき、絶縁抵抗が
低くなるといった欠点を有していた。第4図において、
16及び17は電極、19は半田、20は共通端子であ
る。When such an element is incorporated into a connector, it generally becomes as shown in FIG. However, if you configure it as shown in Figure 4,
A portion of the solder 15 flows into the gap between the pin 14 and the element 18, which apparently reduces the distance between the upper electrodes, lowers the varistor voltage, and causes the varistor voltage to become polarized, resulting in lower insulation resistance. had. In Figure 4,
16 and 17 are electrodes, 19 is solder, and 20 is a common terminal.
そこで本発明では、ピンと素子の間の隙間に半田の一部
が流れ込んでもバリスタ電圧が変化せず、バリスタ電圧
に極性がつかず、絶縁抵抗が変化しない構成の素子を提
供することを目的とするものである。Therefore, an object of the present invention is to provide an element having a configuration in which the varistor voltage does not change even if a part of the solder flows into the gap between the pin and the element, the varistor voltage does not have polarity, and the insulation resistance does not change. It is something.
課題を解決するための手段
前記の問題点を解決するために本発明では、5rTiO
sを主成分とした電圧依存性非直線抵抗特性を有する半
導体セラミックを円筒の中央部に円筒状の貫通穴を有す
るように形成し、前記円筒の一方の端面に外周が前記円
筒の外径よりも小さく内周が前記貫通穴と同し径のドー
ナツ状の電極を設けるとともに、前記貫通穴の内周面に
電極を設け、前記ドーナツ状の電極と前記貫通穴の内周
面の電極を一体化し、前記円筒の他方の端面側で前記円
筒の外周面上に対向する電極を設けたことを特徴とする
電圧依存性非直線抵抗体磁器素子を得ることにより、問
題を解決しようとするものである。Means for Solving the Problems In order to solve the above problems, in the present invention, 5rTiO
A semiconductor ceramic having voltage-dependent non-linear resistance characteristics mainly composed of s is formed to have a cylindrical through hole in the center of the cylinder, and one end surface of the cylinder has an outer periphery smaller than the outer diameter of the cylinder. A small donut-shaped electrode having an inner circumference the same diameter as the through-hole is provided, an electrode is provided on the inner circumferential surface of the through-hole, and the donut-shaped electrode and the electrode on the inner circumferential surface of the through-hole are integrated. The present invention attempts to solve the problem by obtaining a voltage-dependent nonlinear resistor ceramic element characterized in that opposing electrodes are provided on the outer peripheral surface of the cylinder on the other end surface side of the cylinder. be.
作用
本発明によれば、前記円筒の一方の端面に外周が前記円
筒の外径よりも小さく内周が前記貫通穴と同し径のドー
ナツ状の電極を設けるとともに、前記貫通穴の内周面に
電極を設け、前記ドーナツ状の電極と前記貫通穴の内周
面の電極を一体化し、前記円筒の他方の端面側で前記円
筒の外周面上に対向する電極を設けた構成にすることに
より、前記円筒の一方の端面と前記貫通穴の内周面が一
つの電極として一体化されるため、ピンと素子の隙間に
半田の一部が流れ込んでも一体化された電極の上である
ため、見掛けの電極間距離は変化しない。従って、電気
的特性は安定でバリスタ電圧は変化せず、バリスタ電圧
に極性はつかず、絶縁抵抗は変化しないことになる。According to the present invention, a donut-shaped electrode having an outer circumference smaller than the outer diameter of the cylinder and an inner circumference having the same diameter as the through hole is provided on one end surface of the cylinder, and the inner circumferential surface of the through hole By providing an electrode on the inner peripheral surface of the cylinder, integrating the donut-shaped electrode and the electrode on the inner peripheral surface of the through hole, and providing an opposing electrode on the outer peripheral surface of the cylinder on the other end surface side of the cylinder. Since one end surface of the cylinder and the inner circumferential surface of the through hole are integrated as one electrode, even if some solder flows into the gap between the pin and the element, it will be on the integrated electrode, so the apparent The distance between the electrodes does not change. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity, and the insulation resistance does not change.
実施例 以下に実施例を挙げて本発明を具体的に説明する。Example The present invention will be specifically described below with reference to Examples.
まず、5rCOi+ CaCO5,BaCO3,Mgc
o、、 Ti0zを下記の第1表に示すように組成比を
種々に変えて秤量し、ボールミリなどで24Hr混合す
る。次に、それを乾燥した後、1050℃で4Hr焼威
し、再びボール1ルなどで24Hr粉砕した後、乾燥し
、第1戒分とする。First, 5rCOi+ CaCO5, BaCO3, Mgc
o, Ti0z is weighed at various composition ratios as shown in Table 1 below, and mixed for 24 hours using a ball mill or the like. Next, after drying it, it was incinerated at 1050°C for 4 hours, crushed again for 24 hours using a ball, etc., and then dried to form the first precept.
次に、第1戒分、第2成分、第3成分を下記の第1表に
示した&ll戒比になるように秤量し、ボールミルなど
で24Hr混合した後、乾燥し、ポリビニルアルコール
などの有機バインダーを10−4%添加して造粒した後
、1(t/cd)のプレス圧力で外径4φ、内径1.4
φ、高さ2.5’ (am)の円筒状に成形し、空気中
で1100°Cで12Hr焼威し、脱バインダーする。Next, the 1st precept, 2nd component, and 3rd component were weighed so that the precipitate ratio was as shown in Table 1 below, mixed for 24 hours using a ball mill, etc., dried, and mixed with an organic compound such as polyvinyl alcohol. After adding 10-4% binder and granulating it, the outer diameter is 4φ and the inner diameter is 1.4 with a press pressure of 1 (t/cd).
It was formed into a cylindrical shape with a diameter of φ and a height of 2.5' (am), and was burned in air at 1100°C for 12 hours to remove the binder.
次いで、還元性雰囲気、例えばNz:1lz=9:1の
ガス中で1450°Cで3Hr焼威する。さらにその後
、酸化性雰囲気、例えば空気中で1020°Cで6Hr
焼成する。Then, it is burned out at 1450° C. for 3 hours in a reducing atmosphere, for example, a gas of Nz:1lz=9:1. Furthermore, after that, in an oxidizing atmosphere, e.g. air, at 1020°C for 6 hours.
Fire.
こうして得られた焼結体の一方の端面に、Agなとの導
電性ペーストを用いて外周が前記円筒の外径よりも小さ
く内周が貫通穴と同じ径のドーナツ状の電極を例えばス
クリーン印刷などにより設けるとともに、前記貫通穴の
内周面に電極を例えばローラー転写などの方法により設
け、前記ドーナツ状の電極と前記貫通穴の内周面の電極
を一体化する。また、前記円筒の他方の端面側で前記円
筒の外周面上に対向する電極を例えばローラー転写など
の方法で設け、630°C,3m1nで焼威し、第1図
に示すように、電極1.2を形成する。また、第1図で
3は素子である。On one end surface of the sintered body thus obtained, a donut-shaped electrode with an outer circumference smaller than the outer diameter of the cylinder and an inner circumference the same diameter as the through hole is printed, for example, by screen printing using a conductive paste such as Ag. At the same time, an electrode is provided on the inner circumferential surface of the through hole by a method such as roller transfer, so that the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated. Further, opposing electrodes are provided on the outer circumferential surface of the cylinder on the other end surface side of the cylinder by a method such as roller transfer, and burned at 630°C and 3 m1 to form the electrode 1 as shown in FIG. .2 is formed. Further, in FIG. 1, 3 is an element.
次に、第2図番こ示したように半田5、半田9などによ
りピン4及び共通端子10を取り付け、ブタジェンゴム
などの樹脂(図示せず)で電極6,7を設けた素子8の
周囲などをモールドする。このようにして得られた素子
の特性を素子単品とコネクタ組み立て後について下記の
第2表に示す。Next, as shown in Figure 2, the pin 4 and the common terminal 10 are attached using solder 5, solder 9, etc., and the area around the element 8 on which the electrodes 6 and 7 are provided with resin such as butadiene rubber (not shown), etc. mold. The characteristics of the element thus obtained are shown in Table 2 below for the element alone and after assembly of the connector.
なお、第2表でVIIIAはImAの電流を流した時に
素子の両端にかかる電圧であり、V ImAの極性は正
方向のVIIIAと負方向のVl+aAO差を正方向の
Vl、^で割った値であり、絶縁抵抗は印加電圧12V
Dcの時のピン4と共通端子10の間の絶縁抵抗値であ
る。In Table 2, VIIIA is the voltage applied to both ends of the element when a current of ImA flows, and the polarity of V ImA is the value obtained by dividing the difference between VIIIA in the positive direction and Vl+aAO in the negative direction by Vl, ^ in the positive direction. , and the insulation resistance is the applied voltage of 12V.
This is the insulation resistance value between pin 4 and common terminal 10 at DC.
(以下余白)
また、第1TIfc分のSrの一部をCa、 Ba、
Mgで置換する割合は実施例では一部しか示さなかった
が、素子の特性としてハ゛ノスタ特性とコンデンサ特性
を同時に持つ範囲内であればどのようなものであっても
かまわない。また、第2成分、第3t2分は実施例では
一部の組み合わせについてのみ示したが、素子の特性と
してバリスタ特性とコンデンサ特性を同時に持つ範囲内
であればどのような成分であってもかまわない。(Left below) Also, some of the Sr for the first TIfc was converted into Ca, Ba,
Although only a portion of the ratio of substitution with Mg was shown in the embodiment, it may be any value as long as the element has both hinostar characteristics and capacitor characteristics. In addition, although the second component and the third t2 are shown for only some combinations in the example, any component may be used as long as it has both varistor and capacitor characteristics as the element characteristics. .
発明の効果
以上に示したように本発明によれば、前記円筒の一方の
端面に外周が前記円筒の外径よりも小さく内周が前記貫
通穴と同し径のドーナツ状の電極を設けるとともに、前
記貫通穴の内周面に電極を設け、前記ドーナツ状の電極
と前記貫通穴の内周面の電極を一体化し、前記円筒の他
方の端面側で前記円筒の外周面上に対向する電極を設け
た構成にすることにより、前記円筒の一方の端面と前記
貫通穴の内周面が一つの電極として一体化されるため、
ビン4と素子8の隙間に半田5の一部が流れ込んでも一
体化された電極の上であるため、見掛けの電極間距離は
変化しない。従って、電気的特性は安定でバリスタ電圧
は変化せず、バリスタ電圧に極性はつかず、絶縁抵抗は
変化せず、素子をコネクタに組み立てても組み立て前後
の特性の変化は極めて小さく、安定になるという効果が
得られる。また、素子の形状を円筒状にすることにより
素子の長さは長くなるが、素子の半径方向には寸法を小
さくできるため、コネクタのビン間隔を小さくすること
が可能で、コネクタを小型化するのに有効である。Effects of the Invention As described above, according to the present invention, a donut-shaped electrode is provided on one end surface of the cylinder, and the outer circumference is smaller than the outer diameter of the cylinder and the inner circumference has the same diameter as the through hole. , an electrode is provided on the inner circumferential surface of the through hole, the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated, and the electrode is opposed on the outer circumferential surface of the cylinder on the other end surface side of the cylinder. By adopting a configuration in which one end surface of the cylinder and the inner circumferential surface of the through hole are integrated as one electrode,
Even if a part of the solder 5 flows into the gap between the bottle 4 and the element 8, the apparent distance between the electrodes does not change because it is on the integrated electrode. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity, the insulation resistance does not change, and even when the element is assembled into a connector, the change in characteristics before and after assembly is extremely small and stable. This effect can be obtained. In addition, by making the element cylindrical, the length of the element becomes longer, but the element can be made smaller in the radial direction, making it possible to reduce the interval between the bins of the connector, making the connector more compact. It is effective for
第1図は本発明による素子を示す断面図、第2図は本発
明による素子コネクタに組み立てた時の断面図、第3図
は従来例による素子を示す断面図、第4図は従来例によ
る素子をコネクタに組み立てた時の断面図である。
1.2.6.7・・・・・・電極、3.8・・・・・・
本発明による素子、4・・・・・・ビン、5,9・・・
・・・半田、10・・・・・・共通端子。
第
1
図
第
図FIG. 1 is a cross-sectional view showing an element according to the present invention, FIG. 2 is a cross-sectional view when assembled into an element connector according to the present invention, FIG. 3 is a cross-sectional view showing an element according to a conventional example, and FIG. 4 is a cross-sectional view showing an element according to a conventional example. FIG. 3 is a cross-sectional view of the element assembled into a connector. 1.2.6.7... Electrode, 3.8...
Elements according to the invention, 4... Bins, 5, 9...
...Solder, 10...Common terminal. Figure 1 Figure
Claims (2)
抵抗特性を有する半導体セラミックを円筒の中央部に円
筒状の貫通穴を有するように形成し、前記円筒の一方の
端面に外周が前記円筒の外径よりも小さく内周が前記貫
通穴と同じ径のドーナツ状の電極を設けるとともに、前
記貫通穴の内周面に電極を設け、前記ドーナツ状の電極
と前記貫通穴の内周面の電極を一体化し、前記円筒の他
方の端面側で前記円筒の外周面上に対向する電極を設け
たことを特徴とする電圧依存性非直線抵抗体磁器素子。(1) A semiconductor ceramic mainly composed of SrTiO_3 and having voltage-dependent non-linear resistance characteristics is formed to have a cylindrical through hole in the center of the cylinder, and the outer periphery of the cylinder is formed on one end surface of the cylinder. A donut-shaped electrode smaller than the outer diameter and having an inner circumference the same diameter as the through-hole is provided, and an electrode is provided on the inner circumferential surface of the through-hole, and the donut-shaped electrode and the electrode on the inner circumferential surface of the through-hole are provided. 1. A voltage-dependent nonlinear resistor ceramic element, characterized in that a voltage-dependent nonlinear resistor ceramic element is formed by integrating a plurality of electrodes, and further comprising opposing electrodes provided on the outer circumferential surface of the cylinder on the other end surface side of the cylinder.
なくとも一つ以上の元素で置換したことを特徴とする請
求項1記載の電圧依存性非直線抵抗体磁器素子。(2) The voltage-dependent nonlinear resistance ceramic element according to claim 1, wherein a part of the main component Sr is replaced with at least one element among Ca, Ba, and Mg.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2035131A JPH03238802A (en) | 1990-02-15 | 1990-02-15 | Voltage-dependent nonlinear ceramic resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2035131A JPH03238802A (en) | 1990-02-15 | 1990-02-15 | Voltage-dependent nonlinear ceramic resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03238802A true JPH03238802A (en) | 1991-10-24 |
Family
ID=12433377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2035131A Pending JPH03238802A (en) | 1990-02-15 | 1990-02-15 | Voltage-dependent nonlinear ceramic resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03238802A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01289208A (en) * | 1988-05-17 | 1989-11-21 | Matsushita Electric Ind Co Ltd | Manufacturing method of voltage-dependent nonlinear resistor element |
-
1990
- 1990-02-15 JP JP2035131A patent/JPH03238802A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01289208A (en) * | 1988-05-17 | 1989-11-21 | Matsushita Electric Ind Co Ltd | Manufacturing method of voltage-dependent nonlinear resistor element |
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