JPH03242002A - High frequency switch - Google Patents

High frequency switch

Info

Publication number
JPH03242002A
JPH03242002A JP4009890A JP4009890A JPH03242002A JP H03242002 A JPH03242002 A JP H03242002A JP 4009890 A JP4009890 A JP 4009890A JP 4009890 A JP4009890 A JP 4009890A JP H03242002 A JPH03242002 A JP H03242002A
Authority
JP
Japan
Prior art keywords
high frequency
line
pin diode
frequency signal
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4009890A
Other languages
Japanese (ja)
Inventor
Shigeki Furuyama
古山 栄起
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4009890A priority Critical patent/JPH03242002A/en
Publication of JPH03242002A publication Critical patent/JPH03242002A/en
Pending legal-status Critical Current

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Landscapes

  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Abstract

PURPOSE:To minimize the passing loss of a high frequency switch at the operating frequency band by connecting a PIN diode and a bias line with a high frequency signal line of 1/2 wavelength. CONSTITUTION:A high frequency signal inputted from an input terminal 10A is sent through a transmission line 1 and a PIN diode 7 connected in parallel with the transmission line 1 turns on/off the high frequency signal with a bias signal VB sent through a bias line 2. The PIN diode 7 is equivalently capacitive when the high frequency signal is conducted through the PIN diode, resulting in causing mismatching on the transmission line, and the mismatching is compensated by an inductance of a choke coil 4 of the bias line 2 connecting to the transmission line apart by a 1/2 wavelength, that is, the transmission line 1. Thus, the passing loss from the input terminal 10A to an output terminal 10B when the high frequency signal is conducted through the PIN diode is minimized.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、マイクロ波帯やミリ波帯に使用される高周波
スイッチに関し、特にマイクロストリップライン等の誘
電帯基板上に導体面で設けられた高周波信号線路とバイ
アスライン、そしてPINダイオードにより構成され、
その通過損失を減少させた高周波スイッチに関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a high frequency switch used in the microwave band or millimeter wave band, and in particular to a high frequency switch provided on a dielectric band substrate such as a microstrip line with a conductive surface. Consists of a high frequency signal line, bias line, and PIN diode,
This invention relates to a high frequency switch with reduced passing loss.

〔従来の技術〕[Conventional technology]

従来、この種の高周波スイッチは、高周波信号線路に接
続されるPINダイオードとバイアスラインの高周波信
号線路との位置があいまいであった。すなわち、先端シ
ョートのトランスミッションラインや、チョークコイル
等の構造を持つバイアスラインと前記のPINダイオー
ドとの位置が高周波信号線路上に線路上での位置に無関
係に接続された構造となっていた。
Conventionally, in this type of high-frequency switch, the position of the PIN diode connected to the high-frequency signal line and the bias line with respect to the high-frequency signal line has been ambiguous. That is, the transmission line with a short-circuited end, the bias line having a structure such as a choke coil, and the position of the PIN diode are connected on the high frequency signal line regardless of their position on the line.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の高周波スイッチは、高周波信号線路上に
接続されたPINダイオード内の容量によって発生する
定在波成分を無視してバイアスラインが接続されるので
、バイアスラインの接続による通過損失が、PINダイ
オードが接続されていない高周波信号線路にバイアスラ
インを接続した場合の通過損失よりも大きくなり、結果
的に高周波スイッチを伝送する信号の通過損失か大きく
なるという欠点がある。
In the conventional high-frequency switch described above, the bias line is connected while ignoring the standing wave component generated by the capacitance in the PIN diode connected to the high-frequency signal line, so the passing loss due to the connection of the bias line is This has the drawback that the passing loss is greater than that when a bias line is connected to a high-frequency signal line to which no diode is connected, and as a result, the passing loss of the signal transmitted through the high-frequency switch becomes larger.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の高周波スイッチは、ストリップラインと接地と
の間に接続されたPINダイオードと、前記PINダイ
オードに接続されたスI・リップラインと接地との間に
前記PINダイオードをオンまたはオフとするバイアス
電圧を印加する誘導性リアクタンスを有するバイアスラ
インと、前記PINダイオードに接続されたストリップ
ラインの一端とバイアスラインの一端との間を伝送され
る高周波信号の半波長の長さの高周波信号線路とにより
接続され、高周波信号の周波数帯域内信号が導通時にそ
の通過損失を最小としている。
The high frequency switch of the present invention includes a PIN diode connected between a strip line and ground, and a bias that turns the PIN diode on or off between a strip line connected to the PIN diode and ground. A bias line having an inductive reactance for applying a voltage, and a high frequency signal line having a length of half a wavelength of the high frequency signal transmitted between one end of the strip line connected to the PIN diode and one end of the bias line. The transmission loss is minimized when the signal within the frequency band of the high-frequency signal conducts.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例の回路図である。第1図の実
施例は、入力端子10Aから人力された高周波信号がト
ランスミッションライン1を伝送し、このトランスミッ
ションライン1にシャントに接続されたPINダイオー
ド7か、バイアスライン2を通って送られたバイアス信
号■8により高周波信号をオン、オフする構成となって
いる。
FIG. 1 is a circuit diagram of an embodiment of the present invention. In the embodiment shown in FIG. 1, a high frequency signal input from an input terminal 10A is transmitted through a transmission line 1, and either a PIN diode 7 connected to the transmission line 1 in a shunt or a bias signal sent through a bias line 2 is used. The configuration is such that the high frequency signal is turned on and off by signal 8.

PINダイオード7は高周波信号導通時において、等価
的に容量性となり、伝送線路上に不整合を弓き起こす。
The PIN diode 7 becomes equivalently capacitive when a high frequency signal is conducted, causing a mismatch on the transmission line.

この不整合を1/2波長離れた伝送線路すなわちトラン
スミッションライン1に接続されたバイアスライン2の
チョークコイル4によるインダクタンスで回復し、入力
端子10Aから出力端子10Bまでの高周波信号導通時
の通過損失を最小にする。
This mismatch is recovered by the inductance of the choke coil 4 of the bias line 2 connected to the transmission line 1/2 wavelength apart, that is, the transmission line 1, and the passing loss during high frequency signal conduction from the input terminal 10A to the output terminal 10B is reduced. Minimize.

次に、本実施例のトランスミッションライン1の長さを
1/2波長とした場合と、1/4波長とした場合との通
過損失をシミュレーションで比較した特性が第2図の特
性図にカーブ11.12で示される。トランスミッショ
ンライン1の長さを1/2波長とした場合の方がスイッ
チの通過損失が良い。
Next, curve 11 is shown in the characteristic diagram of FIG. .12. The transmission loss of the switch is better when the length of the transmission line 1 is 1/2 wavelength.

ここで、高周波スイッチのPINダイオードは1個の場
合について説明したが、奇数個のPINダイオードを1
/4波長の高周波信号線路で接続し、その奇数個のうち
の偶数個をそれぞれPINダイオード同±1/4波長の
高周波信号線路で整合させ、残る1個をバイアスライン
のインダクタンスで整合させる場合においても同様であ
る。また、ストリップライン以外の他の高周波伝送線路
を要いた高周波スイッチの場合についても同様の原理で
動作することは明らかである。
Here, we have explained the case where the high frequency switch has one PIN diode, but if an odd number of PIN diodes are used,
/4 wavelength high frequency signal line, and the even number of the odd number is matched with the high frequency signal line of ±1/4 wavelength of the same PIN diode, and the remaining one is matched with the inductance of the bias line. The same is true. Furthermore, it is clear that a high frequency switch requiring a high frequency transmission line other than a strip line operates on the same principle.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、PINダイオードとバイ
アスラインとを1/2波長の高周波信号線路で接続する
ことにより、使用周波数帯域における高周波スイッチの
通過損失を最小にできる効果がある。
As explained above, the present invention has the effect of minimizing the passage loss of the high frequency switch in the frequency band used by connecting the PIN diode and the bias line with a 1/2 wavelength high frequency signal line.

本実施例の特性図である。It is a characteristic diagram of this example.

1・・・トランスミッションライン、2・・・バイアス
ライン、3・・・PINダイオード接続部、4,6・・
・チョークコイル、5,8.9・・・コンデンサ、6・
・・チョークコイル、7・・・PINダイオード、10
A・・・入力端子、IOB・・・出力端子。
1... Transmission line, 2... Bias line, 3... PIN diode connection part, 4, 6...
・Choke coil, 5, 8.9... Capacitor, 6・
...Choke coil, 7...PIN diode, 10
A...Input terminal, IOB...Output terminal.

Claims (1)

【特許請求の範囲】[Claims]  ストリップラインと接地との間に接続されたPINダ
イオードと、前記PINダイオードに接続されたストリ
ップラインと接地との間に前記PINダイオードをオン
またはオフとするバイアス電圧を印加する誘導性リアク
タンスを有するバイアスラインと、前記PINダイオー
ドに接続されたストリップラインの一端とバイアスライ
ンの一端との間を伝送される高周波信号の半波長の長さ
の高周波信号線路とにより接続され、高周波信号の周波
数帯域内信号が導通時にその通過損失・を最小とするこ
とを特徴とする高周波スイッチ。
a PIN diode connected between a strip line and ground; and a bias having an inductive reactance for applying a bias voltage to turn on or off the PIN diode between the strip line connected to the PIN diode and ground. line and a high-frequency signal line having a length of half a wavelength of the high-frequency signal transmitted between one end of the strip line connected to the PIN diode and one end of the bias line, and the signal within the frequency band of the high-frequency signal. A high-frequency switch characterized by minimizing its passing loss when conducting.
JP4009890A 1990-02-20 1990-02-20 High frequency switch Pending JPH03242002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4009890A JPH03242002A (en) 1990-02-20 1990-02-20 High frequency switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4009890A JPH03242002A (en) 1990-02-20 1990-02-20 High frequency switch

Publications (1)

Publication Number Publication Date
JPH03242002A true JPH03242002A (en) 1991-10-29

Family

ID=12571394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4009890A Pending JPH03242002A (en) 1990-02-20 1990-02-20 High frequency switch

Country Status (1)

Country Link
JP (1) JPH03242002A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074500A (en) * 2011-09-28 2013-04-22 Mitsubishi Electric Corp High-frequency switch circuit
JP2015073301A (en) * 2014-11-21 2015-04-16 三菱電機株式会社 High frequency switch circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074500A (en) * 2011-09-28 2013-04-22 Mitsubishi Electric Corp High-frequency switch circuit
JP2015073301A (en) * 2014-11-21 2015-04-16 三菱電機株式会社 High frequency switch circuit

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