JPH0324768B2 - - Google Patents
Info
- Publication number
- JPH0324768B2 JPH0324768B2 JP58150953A JP15095383A JPH0324768B2 JP H0324768 B2 JPH0324768 B2 JP H0324768B2 JP 58150953 A JP58150953 A JP 58150953A JP 15095383 A JP15095383 A JP 15095383A JP H0324768 B2 JPH0324768 B2 JP H0324768B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- coating layer
- clean
- film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は、被処理部材の表面汚染防止法並にそ
の装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for preventing surface contamination of a member to be treated.
従来、例えば、超LSI、LSIなどの半導体の製
造において、例えば、半導体基板の表面に多数の
処理工程を経て製造する場合、その基板を或る工
程から次の工程に移行せしめる場合、その移行中
の環境が大気中である場合は勿論のこと、その処
理工程が真空排気によつて浄化されるまでの真空
処理室内、或は清浄空気の循環供給により浄化さ
れるまでのクリーンルーム或はクリーンブース内
である場合も、予め浄化処理した基板のその清浄
な表面は、その間に汚染されて品質の劣化した製
品を生じ、或は製造ロスを生ずるおそれがある。 Conventionally, in the manufacture of semiconductors such as VLSIs and LSIs, for example, when the surface of a semiconductor substrate is manufactured through numerous processing steps, when the substrate is transferred from one process to the next, during the transition Not only when the environment is in the atmosphere, but also in a vacuum processing room until the processing process is purified by vacuum exhaust, or in a clean room or clean booth until it is purified by circulating clean air. Even in this case, the clean surface of the pre-cleaned substrate may become contaminated during the process, resulting in a product of degraded quality or production loss.
本発明は、かかる移行中の基板の表面を汚染を
防止する方法を提供したもので、基板を所定の場
所へ移行せしめるに当り、予めその清浄な表面
に、清浄な環境下で、固形炭酸等の昇華性物質膜
または水等の液体の氷膜から成る被覆層を形成す
ることを特徴とする。 The present invention provides a method for preventing contamination of the surface of a substrate during such transfer. Before transferring the substrate to a predetermined location, solid carbon dioxide, etc. It is characterized by forming a coating layer consisting of a film of a sublimable substance or an ice film of liquid such as water.
更に本発明は上記の方法を実施するための表面
汚染防止装置を提供するもので、基板を収容する
空間内を清浄な環境にするための真空装置又は清
浄空気発生装置から成る清浄環境生成装置と、基
板の清浄な表面に固形炭酸等の昇華性物質膜また
は水等の液体の氷膜から成る被覆層を形成するた
めの被覆層形成装置とから成る。 Furthermore, the present invention provides a surface contamination prevention device for carrying out the above method, and includes a clean environment generating device consisting of a vacuum device or a clean air generator for creating a clean environment in a space that accommodates a substrate; and a coating layer forming device for forming a coating layer consisting of a sublimable substance film such as solid carbonic acid or a liquid ice film such as water on the clean surface of the substrate.
次に、本発明の実施例を、NチヤネルMOSプ
ロセス等の半導体製造工程において、例えば表面
を浄化した基板を次のフオトレジスト塗布工程に
移す場合を例として説明する。 Next, an embodiment of the present invention will be described using as an example a case in which a substrate whose surface has been cleaned is transferred to the next photoresist coating step in a semiconductor manufacturing process such as an N-channel MOS process.
第1図で、1は表面にSiO2層を有するシリコ
ン基板を示し、該基板1は、真空容器内やクリー
ン室、或はクリーンブースなどの空間内に保たれ
て居り、真空排気や清浄空気発生装置により生成
の清浄空気流内内清浄な環境下にある。これを次
のフオトレジスト被膜形成工程に移行せしめるの
であるが、その前に、該基板1の清浄な表面1a
に例えば次のように被覆層を形成する。即ち、清
浄液体窒素ボンベ(図示しない)よりの導出管2
の先端のノズル3を該空間内に設け、該ノズル3
より気化した低温のN2ガスを該基板1に吹き付
けて基板1の温度を−80℃以下に冷却する。次で
この冷却された基板1の清浄な表面1aにCO2ガ
スボンベ(図示しない)からの清浄なCO2ガスを
CO2噴出ノズル4より全面に均一に吹き付けれ
ば、CO2ガスは凝結し、微細なCO2粒子としてそ
の表面に雪状のCO2粒子から成る被覆層5が形成
される。その厚さは通常0.1μm以上とする。予想
される汚染の大きさによりその厚さを設定するこ
とは云うまでもない。このように冷却用N2ガス
ノズルとCO2ガスノズルから成る被覆層形成装置
により基板1に被覆層5を形成後、次の前記の所
要の真空室或は清浄なクリーン室等内にあるフオ
トレジスト被形成工程に移行させる。然るときは
基板1が、大気中や、清浄環境が不充分な雰囲気
中を移行しても、基板1は該被覆層5で覆われて
いるため、微細な塵埃等の異物は該被覆層5表面
に付着するだけで、該被覆層5により基板1の清
浄な表面1aは、汚染から隔離され汚染されるこ
とがない。移行後、の清浄な環境下に置かれた基
板1は、そのフオトレジスト被膜形成を行なう前
に、第2図示の如く、その場に設備した被覆層除
去装置、例えば温風ガス噴出用ノズル6より温風
をそのCO2粒子被覆層5に吹き付ければ直ちに昇
華し消失しその清浄な表面1aが現われる。温風
に代り、副射加熱等の適当な加熱手段でもよい。
又このフオトレジスト被覆形成を所要の真空度の
清浄な容器内で行なうときは、その真空ポンプは
被覆層除去装置として作用し、容器内を真空排気
と共にそのCO2粒子被覆層5を吸引昇華排気せし
めることができる。而して、この温風や真空排気
により、該CO2粒子被覆層5の除去と共に、該被
覆層5に付着していた異物もその温風により除去
され、或は真空吸引除去されて、基板1の表面1
aに残存することなく、清浄な表面1aとして保
たれるので、これにフオトレジスト被膜を形成し
全く汚物を含まない表面処理ができることとな
る。尚、温風ノズル6は図示のように基板1の表
面に沿い横設し側方からその噴気流をその表面に
沿い流すようにすれば、異物の除去が良好に行な
われる。 In Fig. 1, reference numeral 1 indicates a silicon substrate having two SiO layers on the surface, and the substrate 1 is kept in a space such as a vacuum container, a clean room, or a clean booth, and is not exposed to vacuum exhaust or clean air. The generator generates clean air within a clean environment. This is transferred to the next photoresist film forming step, but before that, the clean surface 1a of the substrate 1 is
For example, a coating layer is formed as follows. That is, the outlet pipe 2 from a clean liquid nitrogen cylinder (not shown)
A nozzle 3 at the tip of is provided in the space, and the nozzle 3
More vaporized low-temperature N 2 gas is blown onto the substrate 1 to cool the temperature of the substrate 1 to −80° C. or lower. Next, clean CO2 gas from a CO2 gas cylinder (not shown) is applied to the clean surface 1a of the cooled substrate 1.
When the CO 2 gas is sprayed uniformly over the entire surface from the CO 2 jet nozzle 4, the CO 2 gas is condensed and a coating layer 5 made of snow-like CO 2 particles is formed on the surface of the CO 2 gas as fine CO 2 particles. Its thickness is usually 0.1 μm or more. Needless to say, the thickness is determined depending on the expected level of contamination. After forming the coating layer 5 on the substrate 1 using the coating layer forming apparatus consisting of a cooling N 2 gas nozzle and a CO 2 gas nozzle, the photoresist coating is then placed in the required vacuum chamber or clean room. Move on to the forming process. In such a case, even if the substrate 1 is moved in the air or in an atmosphere with insufficient cleanliness, the substrate 1 is covered with the coating layer 5, so foreign substances such as fine dust will be removed from the coating layer. 5, the clean surface 1a of the substrate 1 is isolated from contamination by the coating layer 5 and is not contaminated. After the transfer, the substrate 1 placed in a clean environment is subjected to a coating layer removal device installed on the spot, such as a hot air gas jetting nozzle 6, as shown in the second figure, before forming a photoresist film thereon. When warmer air is blown onto the CO 2 particle coating layer 5, the particles immediately sublimate and disappear, revealing a clean surface 1a. Instead of hot air, suitable heating means such as sub-irradiation heating may be used.
When this photoresist coating is formed in a clean container with the required degree of vacuum, the vacuum pump acts as a coating layer removal device to evacuate the interior of the container and suck and sublimate and exhaust the CO 2 particle coating layer 5. You can force it. By this warm air and vacuum evacuation, not only the CO 2 particle coating layer 5 is removed, but also the foreign matter attached to the coating layer 5 is removed by the hot air or vacuum suction, and the substrate is removed. 1 surface 1
Since the surface 1a is kept clean without remaining on the surface 1a, it is possible to form a photoresist film thereon and perform a surface treatment that does not contain any dirt at all. Incidentally, if the warm air nozzle 6 is installed horizontally along the surface of the substrate 1 as shown in the figure, and the jet stream is caused to flow along the surface from the side, foreign matter can be effectively removed.
その噴気の流速は適当に設定される。 The flow velocity of the jet is appropriately set.
尚、CO2粒子の被覆層5の形成方法としては、
第3図示のように、より簡単に行なうことができ
る。即ち、上記のように基板1をN2ガスで予冷
することなく、高圧の液化炭酸ボンベ7を用意
し、これから導出する導出管8の先端のノズル9
より液化炭酸を噴出させその断熱膨脹によりCO2
粒子を生成せしめてこれを基板1の清浄な表面1
aに付着せしめ所要の厚さのCO2粒子被覆層5を
形成するようにした。この方法であると、簡単に
比較的大面積の基板面にその被覆層5の形成がで
きる。 The method for forming the coating layer 5 of CO 2 particles is as follows:
This can be done more easily as shown in the third diagram. That is, without pre-cooling the substrate 1 with N 2 gas as described above, a high-pressure liquefied carbon dioxide cylinder 7 is prepared, and a nozzle 9 at the tip of a discharge pipe 8 to be discharged from the cylinder 7 is prepared.
More liquefied carbon dioxide is ejected and its adiabatic expansion produces CO 2
Particles are generated and transferred to the clean surface 1 of the substrate 1.
a to form a CO 2 particle coating layer 5 of a required thickness. With this method, the coating layer 5 can be easily formed on a relatively large area of the substrate surface.
被覆層5の形成には上記のように基板1に対し
て不活性で而も容易に昇華するCO2等の昇華性物
質が被膜形成性物質が代表的に好ましいが、場合
によつては、容易に凍結し且つ容易に気化し基板
を汚染しない水等の液体であつてもよい。その実
施の1例を第4図に示す。例えば、第1図の装置
と同様に、N2ガス等の0℃以下の低温ガスの噴
出用ノズル10から低温ガスを噴出させ基板1に
吹き付けて0℃以下とした後これにスプレー装置
11より純水を基板1の清浄な表面1aに均一に
噴霧して所望の厚さの水の凝結した氷膜被覆層5
を形成する。この氷膜被覆層5を形成した場合
は、そのフオトレジスト工程等における除去は、
融解気化させることなく、0℃以下の温度の低温
の真空乾燥容器又は室内に基板1を導入し真空吸
引によりその氷膜を昇華吸引除去することが好ま
しい。これにより被覆層に付着していた異物は基
板面に残存することがない。 As mentioned above, for forming the coating layer 5, a sublimable substance such as CO 2 which is inert to the substrate 1 and easily sublimes is typically preferable, but in some cases, a sublimable substance such as CO 2 is preferably used. It may be a liquid such as water that freezes easily and evaporates easily and does not contaminate the substrate. An example of its implementation is shown in FIG. For example, similar to the apparatus shown in FIG. 1, low temperature gas such as N2 gas is ejected from a nozzle 10 for blowing out low temperature gas at a temperature below 0°C, and after spraying the substrate 1 to a temperature below 0°C, a spray device 11 is applied to the substrate 1. Pure water is uniformly sprayed onto the clean surface 1a of the substrate 1 to form an ice film coating layer 5 in which water condenses to a desired thickness.
form. When this ice film coating layer 5 is formed, its removal in the photoresist process etc.
It is preferable to introduce the substrate 1 into a low-temperature vacuum drying container or room at a temperature of 0° C. or lower and remove the ice film by sublimation and suction without melting and vaporizing. This prevents foreign matter adhering to the coating layer from remaining on the substrate surface.
尚、CO2粒子被覆層や氷膜被覆層のいづれであ
つても、必要に応じ、基板1の移送中、CO2が昇
華し或は氷が融解することのないように、例えば
或る工程と次の工程を結ぶチヤンネル状やパイプ
状等の通路を設け、このコンベヤー通路内をCO2
粒子の場合は、昇華しないよう約−70℃以下に、
水の氷膜の場合は、0℃以下に冷却した雰囲気に
保ち、移送中これらの凍結被覆層5が欠けて、汚
染されないように防止することができ、又、容器
で搬送する場合は、アイスボツクスや周囲を液体
窒素などで冷却した冷温容器とする。 In addition, whether it is the CO 2 particle coating layer or the ice film coating layer, if necessary, during the transfer of the substrate 1, a certain process, for example, may be carried out to prevent CO 2 from sublimating or ice from melting. A channel-shaped or pipe-shaped passage is provided to connect the conveyor to the next process, and CO 2 is removed from the inside of this conveyor passage.
In the case of particles, keep them at about -70℃ or below to prevent sublimation.
In the case of an ice film of water, it is possible to keep it in an atmosphere cooled to below 0°C to prevent the frozen coating layer 5 from chipping and contamination during transportation. Use a cold container with the box and surrounding area cooled with liquid nitrogen, etc.
尚、基板の被覆処理は1度に複数個に行なつて
もよいことは云うまでもない。 It goes without saying that the coating process for a plurality of substrates may be performed at one time.
このように本発明によるときは、清浄な表面を
もつ基板を搬送するに当り、清浄な環境下で、そ
の表面に固形炭酸等の昇華性物質膜または水等の
液体の氷膜から成る被覆層を形成した後搬送する
ようにしたので、その移行中に清浄な表面が汚染
されることなく次の処理工程に移すことができ、
品質のよい表面処理物を得ることができ、被覆層
が、特に固形炭酸から成るときはその被覆層の除
去が極めて簡単に行なわれ有利である等の効果を
有する。 According to the present invention, when a substrate with a clean surface is transported, a coating layer consisting of a sublimable substance film such as solid carbonic acid or a liquid ice film such as water is applied to the surface in a clean environment. Since the material is transported after being formed, the clean surface can be transferred to the next processing step without being contaminated during the transfer.
A surface-treated product of good quality can be obtained, and when the coating layer is made of solid carbonic acid, the coating layer can be removed very easily, which is advantageous.
第1図は本発明実施の1例の側面図、第2図は
被覆層除去時の1例の側面図、第3図は他例の側
面図、第4図は更に他例の側面図を示す。
1…基板、1a…清浄な表面、3,10…冷却
用ノズル、4,9,11…被膜形成性物質噴出用
ノズル。
FIG. 1 is a side view of one example of implementing the present invention, FIG. 2 is a side view of one example when the coating layer is removed, FIG. 3 is a side view of another example, and FIG. 4 is a side view of yet another example. show. DESCRIPTION OF SYMBOLS 1...Substrate, 1a...Clean surface, 3, 10... Cooling nozzle, 4, 9, 11... Film-forming substance ejection nozzle.
Claims (1)
めその清浄な表面に、清浄な環境下で、固形炭酸
等の昇華性物質膜または水等の液体の氷膜から成
る被覆層を形成することを特徴とする表面汚染防
止法。 2 基板を収容する空間内を清浄な環境にするた
めの真空装置又は清浄空気発生装置から成る清浄
環境生成装置と、基板の清浄な表面に固形炭酸等
の昇華性物質膜または水等の液体の氷膜から成る
被覆層を形成するための被覆層形成装置とから成
る表面汚染防止装置。 3 前記被覆層形成装置は、基板を冷却するため
の冷却装置と、冷却された基板に炭酸ガス等の昇
華性物質または水等の液体から成る被膜形成性物
質を吹き付ける吹付け装置から成る特許請求の範
囲2項に記載の表面汚染防止装置。 4 前記被覆層形成装置は、基板に固形炭酸等の
昇華性物質の固形粒子を吹付ける吹付け装置から
成る特許請求の範囲2項に記載の表面汚染防止装
置。 5 基板の清浄な表面に、清浄な環境下で、固形
炭酸等の昇華性物質膜または水等の液体の氷膜か
ら成る被覆層を形成した後、これを次の清浄な環
境下の表面処理工程に移行せしめ、真空排気又は
温風等から成る被覆層除去装置により、被覆層を
融解することなく除去し、被覆層に移行中付着し
た汚染物質を基板の清浄な表面に残存せしめるこ
となく除去することを特徴とする表面汚染防止
法。 6 固形炭酸等の昇華性物質膜または水等の液体
の氷膜から成る凍結被覆層を備えた基板を移行す
る間その凍結被覆層の昇華又は融解を防止する冷
却通路又は冷却容器を設け、移行中の凍結被覆層
の欠損による移行中の基板の汚染を防止すること
を特徴とする表面汚染防止法。[Scope of Claims] 1. Before transferring a substrate to a predetermined location, a coating consisting of a sublimable substance film such as solid carbonic acid or a liquid ice film such as water is applied to the clean surface of the substrate in a clean environment. A surface contamination prevention method characterized by forming a layer. 2. A clean environment generating device consisting of a vacuum device or a clean air generator to create a clean environment in the space that accommodates the substrate, and a clean environment generating device consisting of a vacuum device or a clean air generator to create a clean environment in the space that accommodates the substrate, and a sublimable substance film such as solid carbonic acid or a liquid such as water on the clean surface of the substrate. A surface contamination prevention device comprising a coating layer forming device for forming a coating layer consisting of an ice film. 3. A patent claim in which the coating layer forming device comprises a cooling device for cooling the substrate and a spraying device for spraying a film-forming substance made of a sublimable substance such as carbon dioxide gas or a liquid such as water onto the cooled substrate. The surface contamination prevention device according to item 2. 4. The surface contamination prevention device according to claim 2, wherein the coating layer forming device comprises a spraying device that sprays solid particles of a sublimable substance such as solid carbonic acid onto the substrate. 5 After forming a coating layer consisting of a sublimable substance film such as solid carbonic acid or a liquid ice film such as water in a clean environment on the clean surface of the substrate, this is subjected to the following surface treatment in a clean environment. Transfer to the process and remove the coating layer without melting it using a coating layer removal device consisting of vacuum exhaust or hot air, etc., and remove contaminants that adhered to the coating layer during transfer without leaving them on the clean surface of the substrate. A surface contamination prevention method characterized by: 6. Provide cooling passages or cooling containers to prevent sublimation or melting of the frozen coating layer during transfer of substrates equipped with a frozen coating layer consisting of a sublimable substance film such as solid carbon dioxide or a liquid ice film such as water. A surface contamination prevention method characterized by preventing contamination of a substrate during transfer due to loss of the frozen coating layer therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58150953A JPS6043833A (en) | 1983-08-20 | 1983-08-20 | Method for prevention of surface contamination and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58150953A JPS6043833A (en) | 1983-08-20 | 1983-08-20 | Method for prevention of surface contamination and device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6043833A JPS6043833A (en) | 1985-03-08 |
| JPH0324768B2 true JPH0324768B2 (en) | 1991-04-04 |
Family
ID=15508032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58150953A Granted JPS6043833A (en) | 1983-08-20 | 1983-08-20 | Method for prevention of surface contamination and device thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043833A (en) |
-
1983
- 1983-08-20 JP JP58150953A patent/JPS6043833A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6043833A (en) | 1985-03-08 |
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