JPH03277800A - Method and device for supplying metal ion - Google Patents
Method and device for supplying metal ionInfo
- Publication number
- JPH03277800A JPH03277800A JP8017090A JP8017090A JPH03277800A JP H03277800 A JPH03277800 A JP H03277800A JP 8017090 A JP8017090 A JP 8017090A JP 8017090 A JP8017090 A JP 8017090A JP H03277800 A JPH03277800 A JP H03277800A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- plating solution
- tank
- plating
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021645 metal ion Inorganic materials 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 238000007747 plating Methods 0.000 claims abstract description 61
- 238000004090 dissolution Methods 0.000 claims abstract description 33
- 239000012535 impurity Substances 0.000 claims abstract description 32
- 238000002347 injection Methods 0.000 claims abstract description 10
- 239000007924 injection Substances 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims description 52
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 13
- 229910052742 iron Inorganic materials 0.000 abstract description 11
- 229910052725 zinc Inorganic materials 0.000 abstract description 11
- 229910052745 lead Inorganic materials 0.000 abstract description 5
- 229910052793 cadmium Inorganic materials 0.000 abstract description 4
- 229910000640 Fe alloy Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 12
- 238000003756 stirring Methods 0.000 description 10
- 239000010953 base metal Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- 239000010419 fine particle Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910007567 Zn-Ni Inorganic materials 0.000 description 1
- 229910007614 Zn—Ni Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、電気めっきへの金属イオン供給方法およびそ
の装置に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method and apparatus for supplying metal ions to electroplating.
〈従来の技術〉
近年、自動車用鋼板を中心として、Zn系めっき鋼板の
需要が急増している。 Zn系めフ討としては、Zn
、Zn−Fe、Zn −Ni、Zn−Mn等がある。<Prior Art> In recent years, demand for Zn-based plated steel sheets, mainly for automobile steel sheets, has rapidly increased. As a Zn-based meh, Zn
, Zn-Fe, Zn-Ni, Zn-Mn, etc.
陽極材質としては不溶性材料、例えばpb、pt等が使
用される場合が多い。Insoluble materials such as PB, PT, etc. are often used as the anode material.
めっきによって消費される金属イオンの供給方法として
めっき金属の炭酸塩またはめっき金属の溶解が行われて
いる。 炭酸塩の場合は熔解速度が速く、装置が簡単で
あるが、コスト(材料費)が高い。 金属の場合はコス
ト(材料費)は安いが、反応速度が遅いのと形状(固体
)から溶解装置が大型、かつ複雑化し溶解方法が難しい
。Carbonates of plating metals or dissolution of plating metals are used as a method of supplying metal ions consumed by plating. In the case of carbonates, the melting speed is fast and the equipment is simple, but the cost (material cost) is high. In the case of metals, the cost (material cost) is low, but the slow reaction rate and shape (solid) require large and complex melting equipment, making the melting method difficult.
高能率の金属溶解装置としては、第7図に示す攪拌槽、
!48図に示す流動槽等がある。Highly efficient metal melting equipment includes a stirring tank shown in Figure 7;
! There is a fluidized tank shown in Figure 48.
〈発明が解決しようとする課題〉
金属1を攪拌槽2で溶解する場合には、第7図において
めっき液3は攪拌羽根4の回転により、例えば矢印Aの
方向に流れる。 金属1として、例えばZnまたはFe
等の地金を溶解するとこの地金中に含まれる不純物5(
Ni、pb等)が溶解し不純物イオンとなる。 この不
純物イオンの発生は、攪拌速度等のいかなる溶解条件を
変えても抑制することは不可能である。<Problems to be Solved by the Invention> When the metal 1 is dissolved in the stirring tank 2, the plating solution 3 flows, for example, in the direction of arrow A in FIG. 7 due to the rotation of the stirring blade 4. As the metal 1, for example, Zn or Fe
When melting a base metal such as, impurities 5 (
(Ni, PB, etc.) dissolves and becomes impurity ions. The generation of impurity ions cannot be suppressed by changing any dissolution conditions such as stirring speed.
また、金属1の地金を流動槽6に充填して溶解する場合
には、第8図においてめっき液3は流!I]a6下方の
注入ロアから装入され、上方の排出口8から排出され、
例えば矢印Bの方向に流れる。 金741の地金はめっ
き液3と接触して溶解し、この地金中の不純物5もイオ
ンとなる。In addition, when the base metal 1 is filled into the fluidizing tank 6 and melted, the plating solution 3 is shown in FIG. I] A6 is charged from the lower injection lower, discharged from the upper discharge port 8,
For example, it flows in the direction of arrow B. The gold 741 base metal comes into contact with the plating solution 3 and dissolves, and the impurities 5 in this base metal also become ions.
この不純物5のイオンの発生は、めっき液3の流速等の
いかなる溶解条件を変えても抑制することは不可能であ
る。The generation of impurity 5 ions cannot be suppressed by changing any dissolution conditions such as the flow rate of the plating solution 3.
このように、攪拌槽、流動槽ともに溶解効率は良いが、
金属中に含まれる不純物までが完全溶解し、めっき液中
に混入してしまうという欠点を有する。In this way, both the stirring tank and the fluidized tank have good dissolution efficiency, but
It has the disadvantage that impurities contained in the metal are completely dissolved and mixed into the plating solution.
本発明は、金属をめっき液中のH“イオンにより溶解す
るにあたって、金属中の不純物の溶解を抑制し、安定し
ためつき液を供給することができる金属イオン供給方法
およびその装置を提供することを目的としている。The present invention provides a method and apparatus for supplying metal ions that can suppress the dissolution of impurities in the metal and supply a stable plating solution when dissolving the metal with H'' ions in the plating solution. It is an object.
く課題を解決するための手段〉
金属をめっき液中のH1イオンによって溶解する反応は
、例えばZnの場合を例にとれば次式によって表される
。Means for Solving the Problems> The reaction in which metal is dissolved by H1 ions in the plating solution is expressed by the following equation, taking the case of Zn as an example.
Zn+2H” = Zn”+H2tこの金属中の不
純物(Pb、Cd等)は溶解しようとする金属(Zn)
に比べ、イオン化傾向が小さい金属(貴な金属)である
。Zn+2H” = Zn”+H2t Impurities in this metal (Pb, Cd, etc.) are the metal (Zn) to be dissolved
It is a metal (noble metal) that has a small ionization tendency compared to .
従って、金属と共存している不純物金属(Pb、Cd等
)の溶解は、イオン化傾向の犬きいZn(卑な金属)が
完全に溶解した後に始まる。Therefore, the dissolution of impurity metals (Pb, Cd, etc.) coexisting with the metal begins after Zn (base metal), which has a tendency to ionize, is completely dissolved.
それ故、不純物(Pb、Cd等)の溶解と抑制するには
、Zn、Fe等のイオン化傾向の大きな金属と常に接触
を保つことが不可欠である。Therefore, in order to dissolve and suppress impurities (Pb, Cd, etc.), it is essential to constantly maintain contact with metals that have a strong ionization tendency, such as Zn and Fe.
金属イオンの供給を化学溶解にて行う際、地金中に含ま
れる不純物イオンの熔解を抑制しようとすれば、不純物
イオンよりイオン化傾向の大きなZn、Fe等と極力、
接触するようにしてやればよい(腐食電池の形成)。When supplying metal ions by chemical dissolution, in order to suppress the dissolution of impurity ions contained in the metal, it is necessary to use Zn, Fe, etc., which have a greater ionization tendency than impurity ions, as much as possible.
All you have to do is make contact (formation of a corrosion battery).
つまり、第5図に示すように容器9内のめっき液3の中
にイオン化傾向の大きな金属、例えばZn、Feの金属
片10とこれよりも貴な金属、例えばNi、Pbの金属
片11が互いに独立して存在するとこれらの金属片10
.11はめっき液3に次第に溶解してそれぞれz n
2 +Fe2+およびN i ”、pb”の各イオンと
なる。That is, as shown in FIG. 5, in the plating solution 3 in the container 9, there are metal pieces 10 of metals with a strong ionization tendency, such as Zn and Fe, and metal pieces 11 of nobler metals, such as Ni and Pb. These metal pieces 10 exist independently of each other.
.. 11 is gradually dissolved in plating solution 3 and z n
2 +Fe2+ and N i ", pb" ions.
一方、第6図に示すようにMW己Zn、Feの金属片1
0とNt% pbの金属片11とが接触しているとNi
% pbの金属片11はめつき液3中に溶解せず、これ
より卑な金属であるZn、Feの金属片10のみが溶解
しZn”Fe2宥オンとなる。On the other hand, as shown in FIG.
When the metal piece 11 of 0 and Nt% pb is in contact, Ni
% pb metal piece 11 is not dissolved in the plating solution 3, and only metal pieces 10 of base metals such as Zn and Fe are dissolved to form Zn''Fe2.
本発明は、上記の知見に基づいてなされたものである。The present invention has been made based on the above findings.
すなわち、上記目的を達成するために本発明によれば、
電気めっきにおいて、金属イオン濃度の減少しためつき
液に前記金属イオンの供給源として金属を溶解槽内に装
入し、これにめっき液を接触させて前記金属を溶解し、
金属イオンを供給するに際し、前記金属は供給すべき金
属およびこの金属よりも貴な金属を含み、前記金属を前
記溶解槽内にその水平方向に対して傾斜をもたせて1層
または2層以上の層状に所定間隔離間して配設し、前記
めつき液を熔解槽の下方から上方へ向けて注入させるこ
とを特徴とする金属イオン供給方法が提供される。That is, according to the present invention, in order to achieve the above object,
In electroplating, a metal is charged into a dissolution tank as a source of the metal ions in a plating solution with a reduced concentration of metal ions, and the plating solution is brought into contact with the solution to dissolve the metal,
When supplying metal ions, the metal includes the metal to be supplied and a metal more noble than this metal, and the metal is placed in the melting tank in one or more layers with an inclination to the horizontal direction. There is provided a method for supplying metal ions, characterized in that the metal ions are arranged in layers separated by a predetermined interval, and the plating solution is injected from the bottom to the top of the melting tank.
ここで、前記めっき液の溶解槽内の流速は、注入めっき
液によって金属が溶解する際に発生する不純物粒子の沈
降速度以下とするのが好ましい。Here, it is preferable that the flow rate of the plating solution in the dissolution tank is set to be equal to or lower than the sedimentation rate of impurity particles generated when the metal is dissolved by the injected plating solution.
また、本発明によれば、電気めっきにおける金属イオン
供給装置において、下方にめっき液の注入口を有する溶
解槽と、前記溶解槽内に設けた透孔を有する水平棚と、
前記水平棚上に一端を固定し、前記水平棚に対して傾斜
をもたせて配設した透孔を有する1個または2個以上か
らなるめっき金属載置用の架台と、前記溶解槽内の少な
くとも前記架台の上端より上方に設けためっき液の排出
口とを有してなることを特徴とする金属イオン供給装置
が提供される。Further, according to the present invention, a metal ion supply device for electroplating includes a dissolving tank having a plating solution injection port below, and a horizontal shelf having a through hole provided in the dissolving tank.
a pedestal for mounting plated metal consisting of one or more pedestals having one end fixed on the horizontal shelf and having a through hole arranged at an angle with respect to the horizontal shelf; There is provided a metal ion supply device characterized in that it has a plating solution discharge port provided above the upper end of the pedestal.
ここで、前記架台の表面に、突起を有するのが好ましい
。Here, it is preferable that the surface of the pedestal has a protrusion.
以下に本発明をさらに詳細に説明する。The present invention will be explained in more detail below.
本発明に用いる金属は、電気めりきにおいて、金属イオ
ン濃度の減少しためつき液の供給源となるもので、Zn
、Feを代表的に挙げることができるが、これに限るも
のではない。The metal used in the present invention serves as a supply source of a plating solution with a reduced metal ion concentration in electroplating, and is Zn.
, Fe can be mentioned as a representative example, but it is not limited to this.
これらの金属を溶解する溶解槽12の1例として第1図
に示すものを挙げることができる。An example of a melting tank 12 for melting these metals is shown in FIG. 1.
この溶解槽12は、槽の下方から上方へ向けてめっき液
3を注入し、槽内に充填した金属片13を溶解するもの
であればよい。This dissolving tank 12 may be of any type as long as the plating solution 3 is injected from the bottom to the top of the tank to dissolve the metal pieces 13 filled in the tank.
本発明において前記金属片13は、溶解槽12内にその
水平方向に対して傾斜をもたせて1層または2層以上の
層状に所定間隔離間して配設する。 すなわち、前記金
属片13が棒状または細長い板状の場合は、その長手方
向の一端を下にし、他端が斜め上方になるように配設す
る。 溶解槽12内に水平棚14を設け、その上に金属
片13を配設するための傾斜した架台15を設けるとよ
い。In the present invention, the metal pieces 13 are arranged in the melting tank 12 at a predetermined interval in one or more layers, inclined with respect to the horizontal direction. That is, when the metal piece 13 is rod-shaped or elongated plate-shaped, it is arranged so that one end in the longitudinal direction thereof faces down and the other end faces diagonally upward. It is preferable to provide a horizontal shelf 14 in the melting tank 12 and provide an inclined pedestal 15 on which the metal piece 13 is placed.
前記金属片13の傾斜角度は、金属の種類、形状、溶解
4!12内のめっき液3の流速等により適宜選定するこ
とができる。The angle of inclination of the metal piece 13 can be appropriately selected depending on the type and shape of the metal, the flow rate of the plating solution 3 in the melt 4!12, and the like.
前記金属片13の形状・寸法は特定しない。 即ち、傾
斜棚の上に適度の間隙をもって積み上げることができ、
かつ液流によって容易に移動しない形状であれば、金属
の種類、溶液の組成、供給すべきイオンの量、供給速度
によって任意に選択できる。The shape and dimensions of the metal piece 13 are not specified. In other words, they can be stacked on an inclined shelf with appropriate gaps.
As long as the shape does not move easily with the liquid flow, it can be arbitrarily selected depending on the type of metal, the composition of the solution, the amount of ions to be supplied, and the supply rate.
このようにして、溶解槽12の下方からめっき液3を吹
込むと、溶解の初期には第1図に示すように溶解しよう
とする金属片13(母材)中に不純物16が点在した状
態で熔解するため、母材13内で腐食電池を形成し、不
純物16は溶解しない。In this way, when the plating solution 3 is blown into the melting tank 12 from below, impurities 16 are scattered in the metal piece 13 (base material) to be melted at the beginning of melting, as shown in FIG. Since the impurities 16 are melted in this state, a corrosion cell is formed within the base material 13, and the impurities 16 are not dissolved.
しかしながら、母材13を構成するZn、Fe等の卑な
金属がほぼ完全に溶解した後は、この不純物16は微粒
子17となり、液中を浮遊し始める。 その状態を第2
図に示す。However, after the base metals such as Zn and Fe constituting the base material 13 are almost completely dissolved, the impurities 16 become fine particles 17 and begin to float in the liquid. The second state
As shown in the figure.
この微粒子17は、不純物16を主体とするものである
。 これらは、溶解槽12下方から吹込まれためっき液
3により上昇するがすぐに自重によって下降し、母材1
3(卑な金属)に接触するため、母材中のめつき金属が
優先的に溶解し、不純物16の溶出は極めて微量に抑制
することができる。The fine particles 17 are mainly composed of impurities 16. These are raised by the plating solution 3 blown in from below the dissolution tank 12, but immediately descended by their own weight, and the base material 1
3 (base metal), the plating metal in the base material is preferentially dissolved, and the elution of the impurity 16 can be suppressed to an extremely small amount.
前記溶解槽12内のめっき液3の流速は、前記微粒子1
7(不純物粒子)の自重による沈降速度以下となるよう
めっき液の注入を調整すれば、金属片13の傾斜面へ微
粒子17が下降して付着し易いので好ましい。The flow rate of the plating solution 3 in the dissolution tank 12 is such that the flow rate of the plating solution 3 in the dissolution tank 12 is
It is preferable to adjust the injection of the plating solution so that the sedimentation rate is lower than that due to the own weight of the particles 7 (impurity particles), since the fine particles 17 can easily descend and adhere to the inclined surface of the metal piece 13.
傾斜した金属片13(母材)の傾斜面に堆積した微粒子
17は、定期的(例えば、1〜2回/日)に溶解槽12
の液抜きを行い、めっき液または水で洗い流し、固液分
離装置等でm理し、分m液は回収または廃水処理系で処
理し、スラジは埋立処分を行うなどによって処理すれば
安定した金属イオンの溶解ができる。The fine particles 17 deposited on the inclined surface of the inclined metal piece 13 (base material) are periodically (for example, once or twice a day) dissolved in the dissolving tank 12.
If the liquid is removed, rinsed with plating solution or water, treated with a solid-liquid separator, etc., the separated liquid is collected or treated with a wastewater treatment system, and the sludge is disposed of in a landfill, it becomes a stable metal. Can dissolve ions.
つぎに本発明の金属イオン供給装置を第1図に示す1実
施例に基づいて説明する。Next, the metal ion supply device of the present invention will be explained based on an embodiment shown in FIG.
本発明の装置は、溶解槽12と、その溶解槽12内に設
けられた水平棚14および架台15を主要要素として構
成されている。The apparatus of the present invention is constructed with a dissolution tank 12, a horizontal shelf 14 provided in the dissolution tank 12, and a pedestal 15 as main elements.
前記溶解槽12は、下方にめっき液の注入ロア、前記架
台15の上端より上方にめっき液の排出口8を有し、一
般に流動槽として用いられるものでよい。 前記注入ロ
アは第1図のように2個に限るものではなく、1個また
は2個以上設けることができる。The dissolution tank 12 has a lower plating solution injection lower part and a plating solution outlet 8 above the upper end of the pedestal 15, and may be generally used as a fluidized tank. The number of injection lowers is not limited to two as shown in FIG. 1, and one or more injection lowers may be provided.
前記水平棚14は、金属13を載置し、金属13にめっ
き液3を噴出するためのもので、その全面に厚さ方向に
開口する透孔18を有する。 透孔18の内径は限定せ
ず、例えば10〜100mmでよい。 材質は、めっき
液によって侵食されないものであればよく、溶解金属が
ZnまたはFeの場合であれば、ゴムライニングを施し
た鋼、FRP等を代表的に挙げることができる。The horizontal shelf 14 is for placing the metal 13 and spouting the plating solution 3 onto the metal 13, and has a through hole 18 opening in the thickness direction on its entire surface. The inner diameter of the through hole 18 is not limited, and may be, for example, 10 to 100 mm. The material may be any material as long as it is not corroded by the plating solution, and if the molten metal is Zn or Fe, typical examples include rubber-lined steel, FRP, etc.
前記架台15は、前記水平棚14の上面に架台15の一
端が固定され、水平面に対して傾斜をもたせて起立して
配設されている。One end of the pedestal 15 is fixed to the upper surface of the horizontal shelf 14, and the pedestal 15 is arranged to stand upright with an inclination to the horizontal plane.
架台15の水平棚14への固定方法は限定しないが、掃
除等を考慮して取外し可能に固定するとよい。 また、
上端は適宜の方法で固定するとよい。 架台15の数は
限定せず、2個以上設ける場合は第1図に示すように互
いに平行するよう配設するのが好ましい。Although the method of fixing the pedestal 15 to the horizontal shelf 14 is not limited, it is preferable to fix it removably in consideration of cleaning and the like. Also,
The upper end may be fixed using an appropriate method. The number of frames 15 is not limited, and when two or more frames 15 are provided, it is preferable that they are arranged parallel to each other as shown in FIG.
前記架台15の傾斜角度は、溶解金属の種類、形状、溶
解条件等により適宜選定することができる。The angle of inclination of the pedestal 15 can be appropriately selected depending on the type and shape of the molten metal, melting conditions, etc.
前記架台】5は、その全面に厚さ方向に開口する透孔1
9を有する。 透孔19の内径は限定せず、例えば5〜
10mmでよい。The frame 5 has a through hole 1 opening in the thickness direction on its entire surface.
It has 9. The inner diameter of the through hole 19 is not limited, for example, 5~
10mm is sufficient.
また、架台15の表面に第3図に示すように突起20を
設け、その上に金属片13を載置するようにすると、溶
解槽12内のめつき液3の流速が平均化するので好まし
い。 突起20の高さは限定しない。Furthermore, it is preferable to provide a protrusion 20 on the surface of the pedestal 15 as shown in FIG. 3 and place the metal piece 13 on the protrusion 20, since the flow velocity of the plating liquid 3 in the dissolution tank 12 is evened out. . The height of the protrusion 20 is not limited.
本発明の金属イオン供給装置を用いて架台15に金属片
13を載置し、注入ロアから溶解alT12内へめフぎ
液3を注入すると、第4図に示すようにめっき液3は水
平棚14の透孔18から噴出して矢印Cで示すめっき液
3の主流が架台15と金属片13の間に形成され、この
主流Cから各架台15の透孔19を通る矢印りで示す支
流が分岐して金属片13と接触する。When the metal piece 13 is placed on the mount 15 using the metal ion supply device of the present invention and the plating solution 3 is injected from the injection lower into the molten AlT 12, the plating solution 3 is deposited on a horizontal shelf as shown in FIG. A main flow of the plating solution 3 ejected from the through holes 18 of 14 and indicated by the arrow C is formed between the mount 15 and the metal piece 13, and from this main flow C, tributaries shown by the arrows pass through the through holes 19 of each mount 15. It branches and comes into contact with the metal piece 13.
このとき、金属片13の表面に生成または付着した不純
物微粒子17は、矢印Eで示すように支流りによフて移
動しつつ再下降し、常に金属片13の表面に接触してお
り、その結果めっき液3中に溶解することがない。At this time, the impurity fine particles 17 generated or attached to the surface of the metal piece 13 move by the tributaries as shown by arrow E and descend again, and are always in contact with the surface of the metal piece 13. As a result, it does not dissolve in the plating solution 3.
〈実施例〉 以下に本発明を実施例に基づき具体的に説明する。<Example> The present invention will be specifically explained below based on Examples.
(実施例1)
Znめっき液としてZn90g/j2.Niおよびpb
がTr、のものを用い、液温50℃とし、第1図に示す
溶解槽12(内径1mのもの)の注入ロアから注入した
。 溶解[12内には水平棚14(材質FRP、厚さ5
mm、透孔の内径10mm)を設け、その上に表1に示
す水平面に対する角度に傾斜した架台15を間隔50m
mで20層を平行させて設け、その上に金属Zn棒(外
径10mm、長さ2 o mm)を載置した。 表1に
示すめつき液流速で金属Znを溶解した。 透孔19の
ない架台を加えた(実施例2)。(Example 1) Zn90g/j2. Ni and pb
Tr, the liquid temperature was 50° C., and the solution was injected from the injection lower of the dissolving tank 12 (with an inner diameter of 1 m) shown in FIG. Dissolution [12 has a horizontal shelf 14 (material FRP, thickness 5
mm, and the inner diameter of the through hole is 10 mm), and on top of it, stands 15 inclined at the angle with respect to the horizontal plane shown in Table 1 are installed at intervals of 50 m.
A metal Zn rod (outer diameter 10 mm, length 2 0 mm) was placed on top of the 20 layers arranged in parallel. Metallic Zn was dissolved at the plating solution flow rate shown in Table 1. A frame without through holes 19 was added (Example 2).
(比較例)
実施例と同じめっき液、金属Zn棒を用い、攪拌槽(内
径1mのもの)にて固液比1:100、液温50℃とし
、表2に示す攪拌速度、時間で金属Znを溶解した(比
較例1〜5)。(Comparative example) Using the same plating solution and metal Zn rod as in the example, the solid-liquid ratio was 1:100 and the liquid temperature was 50°C in a stirring tank (with an inner diameter of 1 m), and the metal was coated at the stirring speed and time shown in Table 2. Zn was dissolved (Comparative Examples 1 to 5).
実施例1で用いた溶解槽の架台15と水平棚14を除去
したほかは実施例1と同様にして、表3に示すめっき液
流速、滞留時間で金属Znを熔解した(比較例6〜11
)。Zn metal was melted in the same manner as in Example 1 except that the stand 15 and horizontal shelf 14 of the melting tank used in Example 1 were removed at the plating solution flow rate and residence time shown in Table 3 (Comparative Examples 6 to 11
).
表1〜3に溶解後めっき液の分析結果を示したが、本発
明例は、いずれも比較例に比べ不純物であるNi濃度が
低く、溶解速度を低下させずに安定しためっき液を供給
できることを示している。Tables 1 to 3 show the analysis results of the plating solution after dissolution, and the examples of the present invention all have a lower concentration of Ni, an impurity, than the comparative examples, and it is possible to supply a stable plating solution without reducing the dissolution rate. It shows.
表
表
表
〈発明の効果〉
本発明は以上説明したように構成されているので、本発
明の金属イオン供給方法によれば、熔解速度を低下させ
ることなく金属イオンの安定溶解並びに不純物イオンの
溶解溶解抑制ができる。Table <Effects of the Invention> Since the present invention is configured as described above, the metal ion supply method of the present invention allows stable dissolution of metal ions and dissolution of impurity ions without reducing the melting rate. Dissolution can be suppressed.
また、本発明の金属イオン供給装置によれば、簡単な構
成で金属イオンの溶解速度を低下させずに不純物の溶解
を抑制し、安定しためつき液を供給することができる。Further, according to the metal ion supply device of the present invention, it is possible to suppress the dissolution of impurities without reducing the dissolution rate of metal ions with a simple configuration, and to supply a stable tamping liquid.
第1図は、溶解初期の金属を模式的に示した本発明の1
実施例を示す金属イオン供給装置の断面図である。
第2図は、不純物粒子の降下を模式的に示した本発明装
置の断面図である。
第3図は、架台の突起を示す断面図である。
第4図は、水平棚および架台付近における不純物粒子と
めっき液の流れを示す模式図である。
第5図および第6図は、本発明の基本原理を説明する図
である。
第7図は、攪拌槽における金属の溶解を示す模式図であ
る。
第8図は、従来の流動槽における金属の溶解を示す模式
図である。
符号の説明
1・・・金属、
2・・・攪拌槽、
3・・・めっき液、
4・・・攪拌羽根、
5・・・不純物、
6・・・流動槽、
7・・・注入口、
8・・・排出口、
9・・・容器、
10.11・・・金属片、
12・・・溶解槽、
(母材)
3・・・金属片
4・・・水平棚、
5・・・Xo、
6・・・不純物、
7・・・微粒子、
8.19・・・透孔、
0・・・突起FIG. 1 is a schematic representation of the metal in the early stage of melting.
1 is a cross-sectional view of a metal ion supply device showing an example. FIG. 2 is a cross-sectional view of the apparatus of the present invention schematically showing the fall of impurity particles. FIG. 3 is a sectional view showing the protrusion of the pedestal. FIG. 4 is a schematic diagram showing the flow of impurity particles and plating solution near the horizontal shelf and the pedestal. FIG. 5 and FIG. 6 are diagrams explaining the basic principle of the present invention. FIG. 7 is a schematic diagram showing the dissolution of metal in a stirring tank. FIG. 8 is a schematic diagram showing the melting of metal in a conventional fluidized tank. Explanation of symbols 1... Metal, 2... Stirring tank, 3... Plating solution, 4... Stirring blade, 5... Impurities, 6... Fluidization tank, 7... Inlet, 8...Discharge port, 9...Container, 10.11...Metal piece, 12...Dissolution tank, (base material) 3...Metal piece 4...Horizontal shelf, 5... Xo, 6...Impurity, 7...Fine particles, 8.19...Through hole, 0...Protrusion
Claims (4)
めっき液に前記金属イオンの供給源として金属を溶解槽
内に装入し、これにめっき液を接触させて前記金属を溶
解し、金属イオンを供給するに際し、 前記金属は供給すべき金属およびこの金属よりも貴な金
属を含み、前記金属を前記溶解槽内にその水平方向に対
して傾斜をもたせて1層または2層以上の層状に所定間
隔離間して配設し、前記めっき液を溶解槽の下方から上
方へ向けて注入させることを特徴とする金属イオン供給
方法。(1) In electroplating, a metal is charged into a dissolution tank as a supply source of the metal ions in a plating solution with a reduced concentration of metal ions, and the plating solution is brought into contact with the solution to dissolve the metal, and the metal ions are dissolved. When supplying, the metal includes the metal to be supplied and a metal more noble than the metal, and the metal is arranged in one or more layers in the melting tank with an inclination to the horizontal direction. A method for supplying metal ions, characterized in that the plating solution is injected from the bottom to the top of the dissolution tank, which are separated for a predetermined period of time.
によつて金属が溶解する際に発生する不純物粒子の沈降
速度以下とする請求項1記載の金属イオン供給方法。(2) The method for supplying metal ions according to claim 1, wherein the flow rate of the plating solution in the dissolution tank is lower than the sedimentation rate of impurity particles generated when the metal is dissolved by the injected plating solution.
、下方にめっき液の注入口を有する溶解槽と、前記溶解
槽内に設けた透孔を有する水平棚と、前記水平棚上に一
端を固定し、前記水平棚に対して傾斜をもたせて配設し
た透孔を有する1個または2個以上からなるめっき金属
載置用の架台と、前記溶解槽内の少なくとも前記架台の
上端より上方に設けためっき液の排出口とを有してなる
ことを特徴とする金属イオン供給装置。(3) In a metal ion supply device for electroplating, a dissolution tank having a plating solution injection port below, a horizontal shelf having a through hole provided in the dissolution tank, and one end fixed on the horizontal shelf, a pedestal for mounting plated metal consisting of one or two or more having through holes arranged at an angle with respect to the horizontal shelf; and a pedestal provided at least above the upper end of the pedestal in the melting tank. A metal ion supply device comprising a liquid discharge port.
金属イオン供給装置。(4) The metal ion supply device according to claim 3, further comprising a projection on the surface of the pedestal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8017090A JPH03277800A (en) | 1990-03-28 | 1990-03-28 | Method and device for supplying metal ion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8017090A JPH03277800A (en) | 1990-03-28 | 1990-03-28 | Method and device for supplying metal ion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03277800A true JPH03277800A (en) | 1991-12-09 |
Family
ID=13710858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8017090A Pending JPH03277800A (en) | 1990-03-28 | 1990-03-28 | Method and device for supplying metal ion |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03277800A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200498A (en) * | 2015-10-13 | 2015-12-30 | 中冶南方工程技术有限公司 | Method for controlling content of hydrogen in zinc dissolving tank for electro-galvanizing and zinc dissolving system |
-
1990
- 1990-03-28 JP JP8017090A patent/JPH03277800A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200498A (en) * | 2015-10-13 | 2015-12-30 | 中冶南方工程技术有限公司 | Method for controlling content of hydrogen in zinc dissolving tank for electro-galvanizing and zinc dissolving system |
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