JPH03278575A - Driving method for solid state image sensor - Google Patents
Driving method for solid state image sensorInfo
- Publication number
- JPH03278575A JPH03278575A JP2079205A JP7920590A JPH03278575A JP H03278575 A JPH03278575 A JP H03278575A JP 2079205 A JP2079205 A JP 2079205A JP 7920590 A JP7920590 A JP 7920590A JP H03278575 A JPH03278575 A JP H03278575A
- Authority
- JP
- Japan
- Prior art keywords
- transfer register
- horizontal transfer
- driving
- image sensor
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 6
- 239000007787 solid Substances 0.000 title 1
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 238000003384 imaging method Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は固体撮像素子の駆動方法に関し、特に水平転送
レジスタの駆動方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for driving a solid-state image sensor, and particularly to a method for driving a horizontal transfer register.
電荷転送型の固体撮像素子では、第3図(a)に示すよ
うに、受光部におけるフォトダイオードlで光電変換さ
れて生じた電荷は移送ゲート2で垂直転送レジスタ3に
移され、垂直転送レジスタ3によって並列に水平転送レ
ジスタ4へと転送されたあと、水平転送レジスタ4,5
を通じて電荷検出・出力部6へと転送されている。この
水平転送レジスタ4,5の駆動パルスは、第3図(b)
に示したように、垂直転送レジスタ3から電荷を受は取
るために駆動を停止させるブランキング期間が必要であ
る。また水平転送レジスタの電極、圧力ゲート電極、電
荷検出部の間には、第4図に示したような容量性結合1
2.13が存在するため、ブランキング期間の存在する
駆動パルスの不連続性によるクロストークが水平転送レ
ジスタからこの容量性結合12.13を通して電荷検出
部15へと伝達されることになり、その結果、出力信号
に第5図(a)のようなレベル変動が発生する。この出
力信号のレベル変動は、第5図(b)に示したようにブ
ランキング期間17のレベル段差の発生に結びつく。In a charge transfer type solid-state image sensor, as shown in FIG. 3(a), charges generated by photoelectric conversion by a photodiode l in a light receiving section are transferred to a vertical transfer register 3 by a transfer gate 2, and then transferred to a vertical transfer register 3. 3 to horizontal transfer register 4 in parallel, horizontal transfer registers 4 and 5
The charge is transferred to the charge detection/output section 6 through the charge detection/output section 6. The driving pulses for the horizontal transfer registers 4 and 5 are shown in FIG. 3(b).
As shown in FIG. 3, a blanking period is required to stop driving in order to receive and take charge from the vertical transfer register 3. In addition, capacitive coupling 1 as shown in Fig. 4 is established between the electrode of the horizontal transfer register, the pressure gate electrode, and the charge detection section.
2.13 exists, crosstalk due to the discontinuity of the drive pulse during the blanking period is transmitted from the horizontal transfer register to the charge detection section 15 through this capacitive coupling 12.13. As a result, level fluctuations as shown in FIG. 5(a) occur in the output signal. This level fluctuation of the output signal leads to the occurrence of a level difference in the blanking period 17, as shown in FIG. 5(b).
上述したブランキング期間のレベル段差が大きいと、信
号のクランプ回路のダイナミックレンジの逸脱により、
映像信号の直流成分が正確に再現されなくなり、映像信
号の黒レベルの再生に影響がでる。また段差のある信号
により水平アパーチャー補正を実施すると、段差成分か
らもアパーチャーが検出されるため、映像の左端の信号
の浮きや沈みにつながる欠点がある。If the level difference in the blanking period mentioned above is large, the dynamic range of the signal clamp circuit will deviate, resulting in
The DC component of the video signal is no longer accurately reproduced, which affects the reproduction of the black level of the video signal. Furthermore, when horizontal aperture correction is performed using a signal with a step difference, the aperture is also detected from the step component, which has the disadvantage of causing the signal at the left end of the image to rise or fall.
本発明の電荷転送型の固体撮像素子の駆動方法は、垂直
転送レジスタに隣接した第1の水平転送レジスタと、電
荷検出・出力部と前記第1の水平転送レジスタとの間に
設けられた複数ボテンシャルウェルを持つ第2の水平転
送レジスタとをそれぞれ別個のパルスで駆動するもので
ある。A method for driving a charge transfer solid-state image sensor according to the present invention includes a first horizontal transfer register adjacent to a vertical transfer register, and a plurality of horizontal transfer registers provided between a charge detection/output section and the first horizontal transfer register. A second horizontal transfer register having a potential well is driven with separate pulses.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図(a)は本発明の一実施例を説明するための固体
撮像素子の構成図である。FIG. 1(a) is a configuration diagram of a solid-state image sensor for explaining one embodiment of the present invention.
垂直転送レジスタ3に隣接した第1の水平転送レジスタ
4と電荷検出・出力部6との間に複数ビットの第2の水
平転送レジスタ5が存在する。A multi-bit second horizontal transfer register 5 exists between the first horizontal transfer register 4 adjacent to the vertical transfer register 3 and the charge detection/output section 6 .
第1.第2の水平転送レジスタ4,5は同一の構造で電
極のみが分離されており、それぞれの転送電極に同一の
パルスを印加することにより連続して転送できるように
なっている。垂直転送レジスタ3から第1の水平転送レ
ジスタ4に転送さhてきた電荷は、第1図(b)のよう
なブランキング期間のある不連続なパルスφH1,φH
2で第1の水平転送レジスタ4を駆動することにより第
2の水平転送レジスタ5へ転送される。第2の水平転送
レジスタ5では、φH1,φH2とは別の駆動装置で発
生させた駆動パルスφH、’ 、φH2’によって電荷
を電荷検出部6へと転送する。したがって、少なくとも
映像期間の信号電荷の従来どおりの転送が可能である。1st. The second horizontal transfer registers 4 and 5 have the same structure, with only the electrodes separated, and can perform continuous transfer by applying the same pulse to each transfer electrode. The charges transferred from the vertical transfer register 3 to the first horizontal transfer register 4 are generated by discontinuous pulses φH1 and φH with a blanking period as shown in FIG. 1(b).
By driving the first horizontal transfer register 4 at 2, the data is transferred to the second horizontal transfer register 5. In the second horizontal transfer register 5, charges are transferred to the charge detection section 6 by driving pulses φH,', φH2' generated by a drive device different from φH1 and φH2. Therefore, conventional transfer of signal charges at least during the video period is possible.
なお、φH2、φH2’はそれぞれφH1l φH1′
を反転させたものである。このように電荷検出部6の直
前の数ビットの第2の水平転送レジスタ5を連続的なパ
ルスで駆動すると、この部分での駆動パルスの不連続性
によるクロストークは発生せず、容量性結合を通しての
電荷検出・出力部6からのクロストークもこの連続駆動
部分を伝搬しているうちに減衰する。結果として出力信
号における駆動パルスのクロストークは減少し、画面へ
の影響も減少させることができる。Note that φH2 and φH2' are φH1l and φH1', respectively.
It is an inverted version of . When the second horizontal transfer register 5 of several bits immediately before the charge detection section 6 is driven with continuous pulses in this way, crosstalk due to the discontinuity of the drive pulse in this part does not occur, and capacitive coupling The crosstalk from the charge detection/output section 6 through the drive is also attenuated while propagating through this continuous drive section. As a result, the crosstalk of the drive pulses in the output signal is reduced, and the influence on the screen can also be reduced.
第2図(a)は本発明の他の実施例の構成図である。垂
直転送レジスタ3に隣接した第1の水平転送レジスタ4
の駆動パルスφH1,φH2をφHr ’φH2’と第
2図(b)のような水平ブランキングのみパルスとの論
理積を素子内部でとり発生させる。FIG. 2(a) is a block diagram of another embodiment of the present invention. A first horizontal transfer register 4 adjacent to the vertical transfer register 3
The driving pulses φH1 and φH2 of φHr 'φH2' are generated by ANDing the horizontal blanking only pulse as shown in FIG. 2(b) inside the element.
これによって外部回路の規模を小さくできる。ブランキ
ング期間におけるストロークに対する効果は第1図に示
した実施例と同じである。This allows the scale of the external circuit to be reduced. The effect on the stroke during the blanking period is the same as in the embodiment shown in FIG.
以上説明したように、本発明は水平転送レジスタの電荷
検出・出力部直前の数ビットを連続した駆動パルスで駆
動することにより、駆動パルスの不連続性によるクロス
トークの水平ブランキング期間における出力信号への影
響を押さえることができ、その結果、画面上での黒色の
浮き沈み等の欠点を改善することができる。As explained above, the present invention provides an output signal during the horizontal blanking period due to crosstalk due to discontinuity of the drive pulses by driving several bits immediately before the charge detection/output section of the horizontal transfer register with continuous drive pulses. As a result, defects such as floating black on the screen can be improved.
第1図(a)は本発明の固体撮像素子の構成平面図、第
1図(b)、 (c)はその水平転送レジスタの駆動パ
ルスの波形図、第2図(a)は本発明の他の実施例を示
す固体撮像素子の構成平面図、第2図(b)は水平ブラ
ンキングパルスの波形図、第3図(a)は従来の固体撮
像素子の構成平面図、第3図(b)はその水平転送レジ
スタの駆動パルスの波形図、第4図は固体撮像素子の電
荷検出部の構成平面図、第5図(a)は出力信号の波形
図、第5図(b)はサンプルホールド出力の波形図であ
る。
1・・・・・・フォトダイオード、2・・・・・・移送
ゲート、3・・・・・・垂直転送レジスタ、4・・・・
・・水平転送レジスタ、5・・・・・・水平転送レジス
タ、6・・・・・・電荷検出・出力部、7・・・・・・
φH1,φH2発生回路、8・・・・・・2層ポリSi
電極、9・・・・・・2層ポリSi電極、lO・・・・
・・イオン注入領域、11,12.13・・・・・結合
容量、14・・・・・・電荷検出部、15・・・・・・
リセット電極、16・・・・・・出力部、17・・・・
・・ブランキング期間。FIG. 1(a) is a structural plan view of the solid-state image sensing device of the present invention, FIG. 1(b) and (c) are waveform diagrams of driving pulses of the horizontal transfer register, and FIG. FIG. 2(b) is a waveform diagram of a horizontal blanking pulse; FIG. 3(a) is a plan view of the configuration of a conventional solid-state imaging device; FIG. b) is a waveform diagram of the driving pulse of the horizontal transfer register, FIG. 4 is a configuration plan view of the charge detection section of the solid-state image sensor, FIG. 5(a) is a waveform diagram of the output signal, and FIG. 5(b) is a diagram of the waveform of the output signal. FIG. 3 is a waveform diagram of sample and hold output. 1...Photodiode, 2...Transfer gate, 3...Vertical transfer register, 4...
...Horizontal transfer register, 5...Horizontal transfer register, 6...Charge detection/output section, 7...
φH1, φH2 generation circuit, 8...2 layer poly-Si
Electrode, 9...Two-layer poly-Si electrode, lO...
...Ion implantation region, 11, 12.13...Coupling capacitance, 14...Charge detection section, 15...
Reset electrode, 16... Output section, 17...
...Blanking period.
Claims (1)
タと、電荷検出・出力部と前記第1の水平転送レジスタ
との間に設けられた複数のポテンシャルウェルを持つ第
2の水平転送レジスタとを有する電荷転送型の固体撮像
素子において、前記第1、第2の水平転送レジスタをそ
れぞれ別個のパルスで駆動することを特徴とした固体撮
像素子の駆動方法。 2、前記第1の水平転送レジスタは周期的停止期間をも
つパルスで駆動され、前記第2の水平転送レジスタは連
続するパルスで駆動されることを特徴とする請求項1記
載の固体撮像素子の駆動方法。[Claims] 1. A first horizontal transfer register adjacent to a vertical transfer register, and a second horizontal transfer register having a plurality of potential wells provided between a charge detection/output section and the first horizontal transfer register. 1. A method for driving a solid-state image sensor, characterized in that the first and second horizontal transfer registers are each driven with separate pulses in a charge transfer type solid-state image sensor having a horizontal transfer register. 2. The solid-state imaging device according to claim 1, wherein the first horizontal transfer register is driven by a pulse having a periodic stop period, and the second horizontal transfer register is driven by a continuous pulse. Driving method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2079205A JPH03278575A (en) | 1990-03-28 | 1990-03-28 | Driving method for solid state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2079205A JPH03278575A (en) | 1990-03-28 | 1990-03-28 | Driving method for solid state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03278575A true JPH03278575A (en) | 1991-12-10 |
Family
ID=13683449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2079205A Pending JPH03278575A (en) | 1990-03-28 | 1990-03-28 | Driving method for solid state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03278575A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010079562A1 (en) * | 2009-01-07 | 2010-07-15 | パナソニック株式会社 | Solid body image capture device |
-
1990
- 1990-03-28 JP JP2079205A patent/JPH03278575A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010079562A1 (en) * | 2009-01-07 | 2010-07-15 | パナソニック株式会社 | Solid body image capture device |
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