JPH03280586A - Free electron laser device - Google Patents

Free electron laser device

Info

Publication number
JPH03280586A
JPH03280586A JP2082405A JP8240590A JPH03280586A JP H03280586 A JPH03280586 A JP H03280586A JP 2082405 A JP2082405 A JP 2082405A JP 8240590 A JP8240590 A JP 8240590A JP H03280586 A JPH03280586 A JP H03280586A
Authority
JP
Japan
Prior art keywords
electron beam
light
wiggler
electron
oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2082405A
Other languages
Japanese (ja)
Inventor
Nobuaki Furuya
古谷 伸昭
Takeo Miyata
宮田 威男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2082405A priority Critical patent/JPH03280586A/en
Publication of JPH03280586A publication Critical patent/JPH03280586A/en
Pending legal-status Critical Current

Links

Landscapes

  • Particle Accelerators (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To realize a strong laser oscillation by bringing the direction of an electron beam into coincidence with that of an oscillation radiation light bent by a reflecting mirror for forming a polygonal optical path at a wiggler's position by a deflecting magnet, vibrating the beam by the wiggler to circulate it while amplifying an oscillation radiation light, thereby performing a laser oscillation. CONSTITUTION:An electron beam 6 of a high speed is implanted from an electron beam incident unit 5 to a circulating orbit of the beam 6 to be formed by a deflecting magnet 4. The beam 6 is brought into coincidence with the direction of an oscillation radiation light 2 bent by a reflecting mirror 1 at the position of a wiggler 3 by the magnet 4. The wiggler 3 vibrates the beam 6 in a wave state. If the vibration period is integer number of times of the wavelength of the light 2 and the speed of the electron is suitable, it is resonated, part of the energy of the electrons is transferred to the light 2, and the light 2 is amplified. In this case, since a polygonal resonator is formed of 8 reflecting mirrors 1, the light 2 becomes a laser oscillation light, and output as an output radiation light 9 from a hole 8 or the like formed partly at an arbitrary mirror 1.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、X線領域の強力光源を与えることができる自
由電子レーザ装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a free electron laser device capable of providing a powerful light source in the X-ray region.

従来の技術 最近の自由電子レーザにおいては、次第に短波長の発振
が可能となり、軟X線の100OAの波長の発振も報告
されている。このような自由電子レーザは、X線領域の
強力光源として利用することが可能である(三間圀興「
自由電子レーザー」レーザー研究、第15巻、第6号(
昭和62年)、P52〜P57参照)。以下、図面を参
照しながら従来の自由電子レーザ装置について説明する
2. Description of the Related Art Recent free electron lasers have gradually become capable of oscillating at shorter wavelengths, and oscillation at a wavelength of 100 OA of soft X-rays has also been reported. Such free electron lasers can be used as powerful light sources in the X-ray region (Kuniyoshi Mima,
"Free Electron Laser" Laser Research, Volume 15, No. 6 (
(1986), see pages 52 to 57). Hereinafter, a conventional free electron laser device will be described with reference to the drawings.

第3図は従来の自由電子レーザ装置を示す構成図である
。第3図において、31と32は対向して配置され、発
振放射光おの光路を形成する反射鏡1.34は反射鏡3
1,32の間に配置されたウィグラーであり、後述する
電子線Iに横方向の周期的電磁場を与えて電子線Iを波
状に振動させる。35は反射鏡31.32で形成する光
路に電子線Iを打込むだめの電子線入射装置、37は反
射鏡31とウィグラーあの間に配置され、電子線入射装
置あから入射した電子線Iを光路と平行に偏向する偏向
磁石、あはウィグラー讃と反射鏡支の間に配置され、ウ
ィグラー調を通過した電子線Iを光路外に導く偏向磁石
である。
FIG. 3 is a configuration diagram showing a conventional free electron laser device. In FIG. 3, 31 and 32 are arranged to face each other, and the reflecting mirrors 1 and 34 forming the optical path of each oscillated radiation beam are the reflecting mirrors 3 and 3.
The wiggler is placed between 1 and 32, and applies a horizontal periodic electromagnetic field to the electron beam I, which will be described later, to cause the electron beam I to vibrate in a wave-like manner. 35 is an electron beam injector for injecting the electron beam I into the optical path formed by the reflecting mirrors 31 and 32; 37 is placed between the reflector 31 and the wiggler, and is used to inject the electron beam I into the optical path formed by the electron beam injector 31 and 32; A deflecting magnet that deflects parallel to the optical path is placed between the wiggler beam and the reflector support and guides the electron beam I that has passed through the wiggler beam out of the optical path.

以上の構成において、以下、その動作について説明する
The operation of the above configuration will be described below.

電子線入射装置あから高速の電子線Iを偏向磁石37に
打込む。電子線Iは偏向磁石37で発振放射光あの光路
と平行に偏向され、ウィグラーあに入る。ウィグラー讃
では電子線Iを波状に振動させる。この振動周期が発振
放射光おの波長の整数倍で電子の速度が適当であると共
鳴し、電子のエネルギーの一部が発振放射光おに移シ、
発振放射光おが増幅される。このとき、2枚の反射鏡3
1.32により共振器を構成しているので、発振放射光
おはレーザ発振光となシ、反射鏡32の一部に形成され
た穴39などから出力放射光40として取出される。
A high-speed electron beam I is shot into the deflection magnet 37 from the electron beam injection device. The electron beam I is deflected by a deflection magnet 37 parallel to the optical path of the oscillated synchrotron radiation, and enters the wiggler A. In Wiggler-san, the electron beam I is made to vibrate in a wave-like manner. If this oscillation period is an integral multiple of the wavelength of the oscillating synchrotron radiation and the speed of the electrons is appropriate, it resonates, and part of the electron energy is transferred to the oscillating synchrotron radiation.
The oscillating synchrotron radiation is amplified. At this time, the two reflecting mirrors 3
1.32 constitutes a resonator, the oscillated radiated light or laser oscillated light is extracted as output radiated light 40 from a hole 39 formed in a part of the reflecting mirror 32 or the like.

発明が解決しようとする課題 しかし、上記のような従来例の構成では、反射鏡31.
32を対向させて共振器を構成しているが、X線領域に
おいては、法線方向の入射に対して反射率が高く、耐久
性に優れた反射鏡がなく、強力な放射光に耐えることが
困難であり、X線領域程度の短波長の強力なレーザ発振
を実現するための大きな障害となっている。
Problems to be Solved by the Invention However, in the conventional configuration as described above, the reflecting mirror 31.
32 facing each other to form a resonator, but in the X-ray region, the reflectance is high for normal incidence, there is no highly durable reflecting mirror, and it is difficult to withstand strong synchrotron radiation. This is a major obstacle to realizing powerful laser oscillation with short wavelengths in the X-ray region.

本発明は、上記のような従来技術の問題を解決するもの
であシ、X線領域において、反射鏡の反射率を高めると
共に、耐久性を向上させ、したがって、強力なレーザ発
振を実現することができ、また、電子線が繰シ返してレ
ーザ発振に役立ち、レーザ発振の効率を向上させること
ができるようにした自由電子レーザ装置を提供すること
を目的とするものである。
The present invention solves the problems of the prior art as described above, and aims to increase the reflectance of a reflecting mirror in the X-ray region, improve durability, and realize powerful laser oscillation. It is an object of the present invention to provide a free electron laser device in which the electron beam is repeatedly used for laser oscillation and the efficiency of laser oscillation can be improved.

課題を解決するための手段 上記目的を達成するために、本発明の技術的解決手段は
、入射角が60°以上となる多角形の光路を形成するよ
うに配置された複数個の反射鏡と、この反射鏡の間に配
置され、電子線を波状に振動させる複数個のウィグラー
と、このウィグラーの間に配置され、電子線の方向をこ
のウィグラーの位置で上記反射鏡により曲げられた発振
放射光の方向と一致させると共に、電子線の周回軌道を
形成する偏向磁石と、上記電子線の周回軌道に電子線を
入射する電子線入射装置と、上記電子線の周回軌道に配
置され、電子線を加速する電子線加速装置とを備えたも
のである。
Means for Solving the Problems In order to achieve the above object, the technical solution of the present invention includes a plurality of reflecting mirrors arranged to form a polygonal optical path with an incident angle of 60° or more. , a plurality of wigglers placed between the reflecting mirrors to vibrate the electron beam in a wave-like manner, and oscillation radiation whose direction of the electron beam is bent by the reflecting mirrors at the position of the wigglers, which is placed between the wigglers. a deflection magnet that aligns the direction of the light and forms an orbit of the electron beam; an electron beam injector that injects the electron beam into the orbit of the electron beam; It is equipped with an electron beam accelerator that accelerates the

そして、上記反射鏡の少なくとも表面は5iC1Pts
 AuXCuXNiから選ばれ、これを主成分とする材
料によシ形成するのが好ましい。
At least the surface of the reflecting mirror is 5iC1Pts.
It is preferable to use a material selected from AuXCuXNi and having AuXCuXNi as its main component.

作用 したがって、本発明によれば、電子線入射装置から入射
する電子線の方向を偏向磁石によりウィグラーの位置で
多角形の光路を形成する反射鏡により曲げた発振放射光
の方向と一致させ、ウィグラーにより電子線を波状に振
動させて発振放射光を増幅させながら周回させてレーザ
発振することができ、このとき、上記反射鏡は入射角が
60°以上となるように配置しているので、X線領域で
反射率を高くすることができ、しかも、耐久性を向上さ
せることができる。また、上記偏向磁石が形成する周回
軌道に配置された電子加速装置により電子線を加速して
電子線のエネルギーを常時補充することができる。
Therefore, according to the present invention, the direction of the electron beam incident from the electron beam injection device is made to coincide with the direction of the oscillated radiation bent by the reflecting mirror forming a polygonal optical path at the wiggler position by means of a deflecting magnet, and the wiggler The electron beam can be vibrated in a wave-like manner and the oscillated synchrotron radiation can be amplified while circulating to generate a laser oscillation. It is possible to increase the reflectance in the line region and also improve the durability. Furthermore, the energy of the electron beam can be constantly replenished by accelerating the electron beam by an electron accelerator placed in the orbit formed by the deflecting magnet.

実施例 以下、本発明の実施例について図面を参照しながら説明
する。
EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例における自由電子レーザ装置
を示す構成図である。
FIG. 1 is a configuration diagram showing a free electron laser device in one embodiment of the present invention.

第1図において、lは反射鏡であり、入射角が60°以
上となる多角形(図示例では正8角形)の発振放射光2
の光路を形成するように複数個(図示例では8個)配置
されている。3はウィグラーであり、反射鏡10間で複
数個(図示例では6個)配置され、後述する電子線6に
横方向の周期的電磁場を与えて電子線6を波状に振動さ
せる。4は偏向磁石であり、ウィグラー3の間で複数個
(図示例では8個)配置され、電子線6の方向をウィグ
ラー3の位置で反射鏡1により曲げられた発振放射光2
の方向と一致させ、電子線60周回軌道を形成する。こ
の偏向磁石4は反射鏡1と重なる位置に配置することに
より、電子lll6の方向を発振放射光2の方向に簡単
に一致させることができるが、必ずしも両者を重なる位
置に配置する必要はない。5は電子線入射装置であシ、
高速の電子線6を偏向磁石4が形成する電子線6の周回
軌道に打込む。7は電子線加速装置であシ、偏向磁石4
が形成する電子線6の周回軌道に複数個(図示例では2
個)配置され、電子線6を加速する。
In FIG. 1, l is a reflecting mirror, and the oscillating radiation 2 has a polygonal shape (regular octagonal in the illustrated example) with an incident angle of 60° or more.
A plurality of them (eight in the illustrated example) are arranged so as to form an optical path of . Numeral 3 denotes wigglers, which are arranged in plural numbers (six in the illustrated example) between the reflecting mirrors 10, and apply a horizontal periodic electromagnetic field to the electron beam 6, which will be described later, to vibrate the electron beam 6 in a wave-like manner. Reference numeral 4 denotes a deflection magnet, which is arranged in plural pieces (eight in the illustrated example) between the wigglers 3, and deflects the direction of the electron beam 6 by the reflecting mirror 1 at the position of the wiggler 3.
The direction of the electron beam is made to coincide with the direction of the electron beam to form a 60-turn orbit of the electron beam. By arranging the deflection magnet 4 in a position overlapping the reflecting mirror 1, the direction of the electrons 116 can be easily made to coincide with the direction of the oscillation radiation 2, but it is not necessarily necessary to arrange the two in an overlapping position. 5 is an electron beam incidence device;
A high-speed electron beam 6 is shot into the orbit of the electron beam 6 formed by the deflecting magnet 4. 7 is an electron beam accelerator, deflection magnet 4
A plurality of (in the illustrated example, two) orbits of the electron beam 6 formed by
) are arranged to accelerate the electron beam 6.

以上の構成において、以下、その動作について説明する
The operation of the above configuration will be described below.

電子線入射装置5から高速の電子線6を偏向磁石4が形
成する電子線60周回軌道に打込む。電子線6は偏向磁
石4によシウィグラ−3の位置で反射鏡1により曲げら
れた発振放射光2の方向と一致させられる。ウィグラー
3では電子線6を波状に振動させる。この振動周期が発
振放射光2の波長の整数倍で電子の速度が適当であると
共鳴し、電子のエネルギーの一部が発振放射光2に移り
、発振放射光2が増幅される。このとき、8個の反射鏡
1により多角形状の共振器を構成しているので、発振放
射光2はレーザ発振光となシ、妊意の反射鏡lの一部に
形成された穴8などから出力放射光9として取出される
A high-speed electron beam 6 is ejected from an electron beam injection device 5 into an electron beam 60 orbit formed by a deflection magnet 4. The electron beam 6 is made to coincide with the direction of the oscillated radiation 2 bent by the reflector 1 at the position of the swiggler 3 by the deflection magnet 4. The wiggler 3 vibrates the electron beam 6 in a wave-like manner. When this oscillation period is an integral multiple of the wavelength of the oscillated radiation 2 and the speed of the electrons is appropriate, resonance occurs, a part of the energy of the electrons is transferred to the oscillated radiation 2, and the oscillated radiation 2 is amplified. At this time, since the eight reflecting mirrors 1 constitute a polygonal resonator, the oscillated radiation 2 is not a laser oscillation light, and the hole 8 formed in a part of the reflecting mirror 1, etc. The output radiation light 9 is extracted from the output beam 9.

そして、電子線6Fi周回運動で繰シ返してレーザ発振
に役立ち、また、電子線6のエネルギーは電子線加速装
置7で常時、補充されるので、安全なレーザ発振を継続
することができ、レーザ発振効率を向上させることがで
きる。
The electron beam 6Fi is repeatedly used for orbital movement, which helps in laser oscillation, and since the energy of the electron beam 6 is constantly replenished by the electron beam accelerator 7, safe laser oscillation can be continued, and the laser oscillation can be continued safely. Oscillation efficiency can be improved.

また、反射鏡1は60°以上の大きい入射角となるよう
に配置しているので、このような大きい入射角に設定す
ると、反射鏡lとして適当な材料を選択することによシ
、X線波長領域でも高い反射率を保つことが可能であシ
、シかも、従来のX線の反射鏡のように多層膜を使用し
ないで済むので、耐久性が高く、高強度のX線の発振で
も反射鏡lの破壊を防止することが可能となる。以下、
その具体例について説明する。
In addition, since the reflecting mirror 1 is arranged to have a large incident angle of 60° or more, when the incident angle is set to such a large angle, X-rays can be It is possible to maintain a high reflectance even in the wavelength range, and because it does not require the use of multilayer films like conventional X-ray reflectors, it is highly durable and can be used even when oscillating high-intensity X-rays. It becomes possible to prevent the reflection mirror l from being destroyed. below,
A specific example will be explained.

第2図(a)、(b)は反射鏡lの表面にSiC、Pt
をそれぞれ用いた場合におけるX線領域の波長と入射角
に対する反射率の関係を示す図(パラメータは入射角度
)である。第2図(a)、(b)から明らかなように、
反射鏡10表面にSiCやptを用いると、X線領域の
波長100A〜400 Aにおいて、入射角60°以上
で高い反射率を有する。このようなX線波長領域におい
て、60°以上の入射角で高い反射率を示す材料として
は、この外に7ku、 Cu、 Ni等があυ、これら
の材料を主成分として、少なくとも反射鏡1の表面に使
用することにより、高い反射率と高い耐久力を同時に達
成することができ、本発明の反射鏡1の材料として用い
るのに適している。
Figures 2 (a) and (b) show SiC and Pt on the surface of the reflecting mirror l.
FIG. 4 is a diagram showing the relationship between the reflectance and the wavelength of the X-ray region and the angle of incidence (the parameter is the angle of incidence) when using each of them. As is clear from FIGS. 2(a) and (b),
When SiC or PT is used on the surface of the reflecting mirror 10, it has a high reflectance at an incident angle of 60° or more at a wavelength of 100 A to 400 A in the X-ray region. In this X-ray wavelength range, other materials that exhibit high reflectance at an incident angle of 60° or more include 7ku, Cu, and Ni. By using it on the surface of the mirror, high reflectance and high durability can be achieved at the same time, and it is suitable for use as a material for the reflecting mirror 1 of the present invention.

なお、上記実施例では、正8角形の光路を形成するよう
に反射鏡1を配置した場合について示しているが、入射
角が60°以上となる配置であれば、正8角形以外の多
角形でも良い。
In addition, although the above embodiment shows the case where the reflecting mirror 1 is arranged so as to form a regular octagonal optical path, a polygon other than a regular octagon may be used if the reflecting mirror 1 is arranged so that the incident angle is 60° or more. But it's okay.

発明の効果 以上述べたように本発明によれば、電子線入射装置から
入射する電子線の方向を偏向磁石によシウィグラーの位
置で多角形の光路を形成する反射鏡により曲げた発振放
射光の方向と一致させ、つィグラーにより電子線を波状
に振動させて発振放射光を増幅させながら周回させてレ
ーザ発振することができ、このとき、上記反射鏡は入射
角が60゜以上となるように配置しているので、X線領
域で反射率を高くすることができ、しかも、耐久性を向
上させることができる。したがって、X線領域において
、強力なレーザ発振を実現することができる。また、上
記偏向磁石が形成する周回軌道に配置された電子加速装
置により電子線を加速して電子線のエネルギーを常時補
充することができる。
Effects of the Invention As described above, according to the present invention, the direction of the electron beam incident from the electron beam injection device is bent by the deflecting magnet and the reflecting mirror that forms a polygonal optical path at the position of the swiggler. The electron beam is vibrated in a wave-like manner by a twiggler, and the oscillated radiation is amplified while circulating to generate a laser oscillation. Because of this arrangement, reflectance can be increased in the X-ray region, and durability can be improved. Therefore, strong laser oscillation can be achieved in the X-ray region. Furthermore, the energy of the electron beam can be constantly replenished by accelerating the electron beam by an electron accelerator placed in the orbit formed by the deflecting magnet.

したがって、レーザ発振効率を向上させることができる
Therefore, laser oscillation efficiency can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例における自由電子レーザ装置
を示す構成図、第2図(a)、(b)は上記実施例の反
射鏡の表面にSiC,PLを用いた場合におけるX線領
域の波長と入射角に対する反射率の関係を示す図、第3
図は従来の自由電子レーザ装置を示す構成図である。 1・・・反射鏡、2・・・発振放射光、3・・・ウィグ
ラー4・・・偏光磁石、5・・・電子線入射装置、6・
・・電子線、7・・・電子線加速装置、9・・・出力放
射光。
FIG. 1 is a block diagram showing a free electron laser device according to an embodiment of the present invention, and FIGS. 2(a) and (b) show X-rays when SiC and PL are used for the surface of the reflecting mirror of the above embodiment. Diagram showing the relationship between the reflectance and the wavelength of the region and the angle of incidence, 3rd
The figure is a configuration diagram showing a conventional free electron laser device. DESCRIPTION OF SYMBOLS 1... Reflection mirror, 2... Oscillation synchrotron radiation, 3... Wiggler 4... Polarizing magnet, 5... Electron beam incidence device, 6...
...Electron beam, 7...Electron beam accelerator, 9...Output synchrotron radiation.

Claims (2)

【特許請求の範囲】[Claims] (1)入射角が60°以上となる多角形の光路を形成す
るように配置された複数個の反射鏡と、この反射鏡の間
に配置され、電子線を波状に振動させる複数個のウィグ
ラーと、このウィグラーの間に配置され、電子線の方向
をこのウィグラーの位置で上記反射鏡により曲げられた
発振放射光の方向と一致させると共に、電子線の周回軌
道を形成する偏向磁石と、上記電子線の周回軌道に電子
線を入射する電子線入射装置と、上記電子線の周回軌道
に配置され、電子線を加速する電子線加速装置とを備え
た自由電子レーザ装置。
(1) A plurality of reflecting mirrors arranged to form a polygonal optical path with an incident angle of 60° or more, and a plurality of wigglers arranged between the reflecting mirrors to vibrate the electron beam in a wave-like manner. and a deflecting magnet disposed between the wiggler, which aligns the direction of the electron beam with the direction of the oscillated radiation bent by the reflecting mirror at the position of the wiggler, and forms an orbit of the electron beam; A free electron laser device comprising: an electron beam injection device that injects an electron beam into an orbit of the electron beam; and an electron beam accelerator that is arranged in the orbit of the electron beam and accelerates the electron beam.
(2)反射鏡の少なくとも表面がSiC、Pt、Au、
CuNiから選ばれ、これを主成分とする材料により形
成された請求項1記載の自由電子レーザ装置。
(2) At least the surface of the reflecting mirror is SiC, Pt, Au,
2. The free electron laser device according to claim 1, wherein the free electron laser device is made of a material selected from CuNi and having CuNi as its main component.
JP2082405A 1990-03-29 1990-03-29 Free electron laser device Pending JPH03280586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2082405A JPH03280586A (en) 1990-03-29 1990-03-29 Free electron laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2082405A JPH03280586A (en) 1990-03-29 1990-03-29 Free electron laser device

Publications (1)

Publication Number Publication Date
JPH03280586A true JPH03280586A (en) 1991-12-11

Family

ID=13773683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2082405A Pending JPH03280586A (en) 1990-03-29 1990-03-29 Free electron laser device

Country Status (1)

Country Link
JP (1) JPH03280586A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477056A (en) * 1992-08-07 1995-12-19 Hitachi, Ltd. Circular accelerator, operation method thereof, and semiconductor irradiation system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477056A (en) * 1992-08-07 1995-12-19 Hitachi, Ltd. Circular accelerator, operation method thereof, and semiconductor irradiation system

Similar Documents

Publication Publication Date Title
USRE42499E1 (en) System and method for amplifying an optical pulse and pumping laser therefor
US4740973A (en) Free electron laser
US6999491B2 (en) High intensity and high power solid state laser amplifying system and method
US5359622A (en) Radial polarization laser resonator
JPH07110400A (en) Method and device for generating highly bright x ray or gamma ray
US5375130A (en) Azimuthal and radial polarization free-electron laser system
US3484721A (en) X-ray laser
US3617939A (en) Pumping arrangements for lasers operating at wavelengths shorter than visible light
US4308506A (en) Fast acousto-optic Q-switch laser
US6970483B2 (en) Method and a device for realizing both high extraction efficiency of laser light from electron beams and femto-second ultra-short in free-electron lasers pulses
JPH03280586A (en) Free electron laser device
EP0586278B1 (en) Laser generating apparatus
US3670258A (en) Frequency-doubled neodymium doped glass laser utilizing a lithium niobate crystal
US5097477A (en) Laser diode pumped multiple rod ring laser allowing combination of multiple pump sources
US3458829A (en) Apparatus for controlling the area of emission of laser light
US3972008A (en) Method and apparatus for generating coherent radiation in the ultra-violet region and above by use of distributed feedback
US4674091A (en) Methods for tuning free electron lasers to multiple wavelengths
EP0762565B1 (en) Solid state device for generating electromagnetic wave in terahertz-band
JPH0963797A (en) Method and device for generating light emission
US5117431A (en) Synchrotron radiation excited laser
JP2711562B2 (en) Laser oscillation target
US20220271500A1 (en) Vertical external-cavity surface-emitting laser
JPH0671126B2 (en) Free Electron Laser Oscillation Method
JP2726920B2 (en) Industrial photon generator
JP2000162398A (en) X-ray generator