JPH03287797A - Corrosion resistant member - Google Patents
Corrosion resistant memberInfo
- Publication number
- JPH03287797A JPH03287797A JP8986890A JP8986890A JPH03287797A JP H03287797 A JPH03287797 A JP H03287797A JP 8986890 A JP8986890 A JP 8986890A JP 8986890 A JP8986890 A JP 8986890A JP H03287797 A JPH03287797 A JP H03287797A
- Authority
- JP
- Japan
- Prior art keywords
- corrosion
- resistant member
- ions
- aluminum
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007797 corrosion Effects 0.000 title claims description 33
- 238000005260 corrosion Methods 0.000 title claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000010407 anodic oxide Substances 0.000 claims description 11
- 150000002902 organometallic compounds Chemical class 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 150000004703 alkoxides Chemical class 0.000 claims description 5
- 150000007942 carboxylates Chemical class 0.000 claims description 5
- 239000011224 oxide ceramic Substances 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- -1 yttrium ions Chemical class 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 238000007598 dipping method Methods 0.000 claims description 4
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 4
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims description 3
- 238000007743 anodising Methods 0.000 claims description 3
- 229910001430 chromium ion Inorganic materials 0.000 claims description 3
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000243 solution Substances 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000012700 ceramic precursor Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910001502 inorganic halide Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical class CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical class CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 description 1
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- HHFAWKCIHAUFRX-UHFFFAOYSA-N ethoxide Chemical compound CC[O-] HHFAWKCIHAUFRX-UHFFFAOYSA-N 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical class CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Chemical class CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- IKNCGYCHMGNBCP-UHFFFAOYSA-N propan-1-olate Chemical compound CCC[O-] IKNCGYCHMGNBCP-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000008117 stearic acid Chemical class 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野コ
この発明は、腐食性ガスを使用する半導体製造装置や真
空プラント等に使用する耐食性の部材および電線などに
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to corrosion-resistant members and electric wires used in semiconductor manufacturing equipment, vacuum plants, etc. that use corrosive gases.
［従来の技術および発明が解決しようとする課題］アル
ミニウムおよびアルミニウム合金は、比較的耐食性に優
れている。しかし、これらを半導体製造装置中や真空プ
ラント中で、電線や各種の部材として用いると、化学蒸
着法等で使用する低融点金属の腐食性蒸気や腐食性の高
い無機ハロゲン化物ならびに有機金属化合物の原料ガス
等によって、腐食が早期に進行し、クラックが成長する
。[Prior art and problems to be solved by the invention] Aluminum and aluminum alloys have relatively excellent corrosion resistance. However, when these are used as electric wires and various parts in semiconductor manufacturing equipment or vacuum plants, corrosive vapors of low-melting point metals used in chemical vapor deposition, highly corrosive inorganic halides, and organometallic compounds are generated. Corrosion progresses quickly and cracks grow due to raw material gas, etc.
このため、電線や各種の部材に陽極酸化処理を施すこと
が試みられている。これは、処理を施すことによって電
線や各種の部材に陽極酸化皮膜を形成させ、この皮膜に
よって腐食の進行を食い止めようとするものである。陽
極酸化では、通常の方法に従い、これらの金属を希硫酸
等の電解質水溶液中に浸漬し、アノード分極する。しか
しながら、このようにして陽極酸化皮膜を形成させた電
線および各種の部材は、耐食性の向上が若干見られるも
のの十分な耐食性を備えたものではなかった。For this reason, attempts have been made to subject electric wires and various members to anodic oxidation treatment. This process involves forming an anodic oxide film on electric wires and various members, and using this film to prevent corrosion from progressing. In anodic oxidation, these metals are immersed in an aqueous electrolyte solution such as dilute sulfuric acid and anodically polarized according to a conventional method. However, although the electric wires and various members on which the anodic oxide film was formed in this manner showed some improvement in corrosion resistance, they did not have sufficient corrosion resistance.
それゆえに、この発明の目的は、アルミニウムまたはア
ルミニウム合金を用いた電線や各種の部材において、低
融点金属の腐食性蒸気、腐食性の高い無機ハロゲン化物
および有機金属化合物などに対する十分な耐食性を備え
た耐食部材を提供することにある。Therefore, an object of the present invention is to provide electric wires and various members made of aluminum or aluminum alloy with sufficient corrosion resistance against corrosive vapors of low-melting point metals, highly corrosive inorganic halides, and organic metal compounds. An object of the present invention is to provide a corrosion-resistant member.
［課題を解決するための手段］
請求項１に従う耐食部材は、アルミニウムまたはアルミ
ニウム合金の表面を陽極酸化させて形成した耐食性の酸
化皮膜を有する耐食部材であって、陽極酸化皮膜中に、
クロムイオン、イツトリウム、ジルコニウムイオンおよ
びマグネシウムイオンからなる群より選ばれた少なくと
も一種のイオンを含浸させた後、焼成を行なうことによ
り、陽極酸化皮膜中に含浸させたイオンの酸化物を形成
させたことを特徴としている。[Means for Solving the Problems] A corrosion-resistant member according to claim 1 is a corrosion-resistant member having a corrosion-resistant oxide film formed by anodizing the surface of aluminum or an aluminum alloy, the anodic oxide film containing:
After impregnating at least one type of ion selected from the group consisting of chromium ions, yttrium, zirconium ions, and magnesium ions, oxides of the impregnated ions are formed in the anodic oxide film by firing. It is characterized by
請求項２に従う耐食部材は、請求項１からなる耐食部材
の外層に、重合性有機金属化合物からなるセラミックス
前駆体の溶液を浸漬もしくは塗布した後、加熱処理する
ことにより、酸化物セラミックスの絶縁膜を形成させた
ことを特徴としている。The corrosion-resistant member according to claim 2 is obtained by dipping or coating the outer layer of the corrosion-resistant member according to claim 1 with a solution of a ceramic precursor made of a polymerizable organometallic compound, and then heat-treating the outer layer to form an insulating film of oxide ceramics. It is characterized by the formation of
酸化物セラミックスの絶縁膜はほとんどすべての金属酸
化物系セラミックスによって形成できるが、その材質に
ついて例を挙げれば、５ｉ０２、Ａ ｆＬ２ ｏ３ 、
Ｚ ｒ ０４ 、Ｔ ｔ ｏ２およびＭｇＯ等がある。The insulating film of oxide ceramics can be formed from almost all metal oxide ceramics, but examples of the materials include 5i02, A fL2 o3,
Examples include Z r 04 , T t o2 and MgO.
また、重合性有機金属化合物として、金属アルコキシド
または金属のカルボン酸塩を用いることが好ましい。金
属アルコキシドを用いる場合、セラミックス前駆体の溶
液は、アルコール等の有機溶液に金属アルコキシドを添
加したものである。Moreover, it is preferable to use a metal alkoxide or a metal carboxylate as the polymerizable organometallic compound. When using a metal alkoxide, the ceramic precursor solution is a solution obtained by adding the metal alkoxide to an organic solution such as alcohol.
また、必要に応じてこれに水および触媒を添加する。金
属アルコキシドとしては、たとえば、金属のエトキシド
、プロポキシドおよびブトキシド等がよく用いられる。Additionally, water and a catalyst are added to this as necessary. As the metal alkoxide, for example, metal ethoxide, propoxide, butoxide, etc. are often used.
一方、金属のカルボン酸塩を用いる場合、セラミックス
前駆体の溶液は、金属のカルボン酸塩を適当な有機溶媒
に溶解したものである。このタイプの前駆体溶液を用い
る方法では、浸漬もしくは塗布後に加熱して熱分解する
ことによりセラミックスを生成させていく。このため、
用いる重合性有機金属化合物の分解温度は、その沸点や
あるいは昇華点よりも低いことが必要である。金属のカ
ルボン酸塩として具体的には、たとえば、ナフテン酸、
カプリル酸、ステアリン酸およびオクチル酸の金属塩が
好ましい。On the other hand, when using a metal carboxylate, the ceramic precursor solution is a solution of the metal carboxylate in a suitable organic solvent. In a method using this type of precursor solution, ceramics are produced by immersion or coating and then heating and thermal decomposition. For this reason,
The decomposition temperature of the polymerizable organometallic compound used must be lower than its boiling point or sublimation point. Specific examples of metal carboxylates include naphthenic acid,
Metal salts of caprylic acid, stearic acid and octylic acid are preferred.
また、重合性有機金属化合物は、珪素、アルミニウム、
イツトリウム、ジルコニウムおよびマグネシウムからな
る群より選ばれた少なくとも一種の金属を含むものが好
ましい。In addition, polymerizable organometallic compounds include silicon, aluminum,
Those containing at least one metal selected from the group consisting of yttrium, zirconium and magnesium are preferred.
［作用］
陽極酸化皮膜中にクロムイオン、イツトリウムイオン、
ジルコニウムイオンおよびマグネシウムイオンのうち少
なくとも一種を含浸させ加熱処理すると、被膜中に入り
込んだイオンは、酸化されながら陽極酸化皮膜と良好に
結合し、構造に欠陥の少ない（Ａｌｌ、Ｃｒ）２０ｓ固
溶体を形成する。[Action] Chromium ions, yttrium ions,
When at least one of zirconium ions and magnesium ions is impregnated and heat-treated, the ions that have entered the film bond well with the anodic oxide film while being oxidized, forming a (All, Cr) 20s solid solution with few structural defects. do.
この欠陥の少ない構造が、耐食性を向上させると考えら
れる。This structure with fewer defects is thought to improve corrosion resistance.
また、陽極酸化皮膜中に含浸イオンの酸化物を分散させ
た後、セラミックス前駆体の溶液を浸漬もしくは塗布し
て加熱処理することにより酸化物セラミックスの絶縁膜
を形成すれば、耐食部材に高い絶縁性を付与することが
できるほか、元来多孔性である陽極酸化皮膜を緻密化し
耐食性もさらに向上する。In addition, if an insulating film of oxide ceramics is formed by dispersing the oxide of the impregnated ions in the anodic oxide film, then dipping or applying a ceramic precursor solution and heat-treating it, it is possible to provide high insulation for corrosion-resistant parts. In addition to imparting properties, it also densifies the originally porous anodic oxide film, further improving its corrosion resistance.
［実施例コ
線径２ｍｍφの純アルミニウム線１ｍを温度を１０℃に
保持した１５重量％希硫酸中に浸漬しアルミニウム基材
に正の電圧を印加して浴電流密度５０Ａ／ｄｍ２で２分
間陽極酸化した。この線材には、陽極酸化皮膜が約１０
μｍ程度形成した。[Example] 1 m of pure aluminum wire with a wire diameter of 2 mmφ is immersed in 15 wt% dilute sulfuric acid kept at a temperature of 10°C, a positive voltage is applied to the aluminum base material, and the anodized wire is anodized for 2 minutes at a bath current density of 50 A/dm2. Oxidized. This wire has an anodized film of about 10
It was formed on the order of μm.
次に、２０重量％の三酸化クロムの水溶液中に１０分程
度浸漬した後、１５０℃の熱風で乾燥した。Next, after being immersed in a 20% by weight aqueous solution of chromium trioxide for about 10 minutes, it was dried with hot air at 150°C.
浸漬および１５０℃の乾燥の工程を５回行った後、その
線材をさらに酸素気流中５００℃で乾燥した。After performing the steps of dipping and drying at 150°C five times, the wire was further dried at 500°C in an oxygen stream.
この線材の表面をエネルギー分散型螢光Ｘ線分光分析装
置で分析したところ表面組成は、ＡＱ−８４ａｔｏｍ％
、ＣＣｒ−１６ａｔｏ％であった。When the surface of this wire was analyzed using an energy dispersive X-ray fluorescence spectrometer, the surface composition was found to be AQ-84 atom%.
, CCr-16ato%.
この線材を、１０ｍｍＴｏ ｒ ｒのガリウム分圧で制
御された容器内に３０時間放置した後、線材表面に存在
する腐食孔の深さを横断面観察より求めたところ、平均
値で２μｍであった。また比較のため、陽極酸化を行な
う前の純アルミニウム基材と、クロム酸含浸前の陽極酸
化したアルミニウム基材を同様の腐食環境下に３０時間
放置したところ、純アルミニウム基材に関しては腐食孔
の深さは１０μｍ程度であり、陽極酸化アルミニウムに
関しては陽極酸化皮膜中に５μｍの腐食孔が観測された
。このようにこの発明の耐食アルミニウム線は、良好な
耐食性を有していた。After this wire was left in a container controlled at a gallium partial pressure of 10 mm Torr for 30 hours, the depth of the corrosion holes existing on the wire surface was determined by cross-sectional observation, and the average value was 2 μm. . For comparison, a pure aluminum base material before anodizing and an anodized aluminum base material before chromic acid impregnation were left in a similar corrosive environment for 30 hours. The depth was approximately 10 μm, and for the anodized aluminum, 5 μm corrosion holes were observed in the anodic oxide film. Thus, the corrosion-resistant aluminum wire of the present invention had good corrosion resistance.
また、陽極酸化皮膜中に酸化クロムを形成させた耐食電
線を、テトラブチルオルトシリケイト８モル％、水３２
モル％、エタノール６０モル％混合した溶液に、１．２
Ｎの濃硝酸をテトラブチルオルトシリケイトに対し１０
０分の１モル添加し７０℃で２時間加熱攪拌することに
より得た液に浸漬した後、４００℃で１０分間加熱する
工程を１０回繰返し、最後に５００℃酸素気流中で１０
分間加熱を行なった。In addition, a corrosion-resistant electric wire with chromium oxide formed in the anodic oxide film was prepared by adding 8 mol% of tetrabutyl orthosilicate and 32% of water.
mol%, ethanol 60 mol% mixed solution, 1.2
N concentrated nitric acid to tetrabutylorthosilicate 10
After adding 1/0 mole and heating and stirring at 70°C for 2 hours, the process of heating at 400°C for 10 minutes was repeated 10 times, and finally at 500°C in an oxygen stream for 10 minutes.
Heating was performed for a minute.
このようにして耐食電線上に酸化珪素の絶縁膜が５μｍ
程度形成された。以上のようにして得られた耐食電線は
絶縁破壊電圧が６００ｖであり、さらに直径５ｃｍの円
筒にこの絶縁被覆電線を巻きつけても被覆に何ら亀裂が
発生しないものであった。この線材を、１０ｍｍＴｏｒ
ｒのガリウム分圧で制御された容器内に３０時間放置し
たが、線材表面に存在する腐食孔はほとんど観測されな
かった。In this way, a silicon oxide insulating film with a thickness of 5 μm was formed on the corrosion-resistant wire.
degree formed. The corrosion-resistant wire thus obtained had a dielectric breakdown voltage of 600 V, and even when the insulated wire was wound around a cylinder with a diameter of 5 cm, no cracks were generated in the coating. This wire rod is heated to 10mm Tor.
Although the wire was left in a container controlled at a gallium partial pressure of r for 30 hours, almost no corrosion holes were observed on the wire surface.
［発明の効果コ
以上説明したように、この発明は耐食性に非常に優れた
ものである。したがって、この発明を、半導体製造装置
中や真空プラント中で低融点金属の腐食性蒸気や腐食性
の高い無機ハロゲン化物ならびに有機金属化合物等にさ
らされる部材に使用すれば有効である。[Effects of the Invention] As explained above, the present invention has excellent corrosion resistance. Therefore, the present invention is effective when applied to members exposed to corrosive vapors of low melting point metals, highly corrosive inorganic halides, organometallic compounds, etc. in semiconductor manufacturing equipment or vacuum plants.
５５55
Claims (4)
極酸化させて形成した耐食性の酸化皮膜を有する耐食部
材であって、前記陽極酸化皮膜中に、クロムイオン、イ
ットリウムイオン、ジルコニウムイオンおよびマグネシ
ウムイオンからなる群より選ばれた少なくとも一種のイ
オンを含浸させた後、焼成を行なうことにより、前記陽
極酸化皮膜中に含浸させたイオンの酸化物を形成させた
ことを特徴とする耐食部材。(1) A corrosion-resistant member having a corrosion-resistant oxide film formed by anodizing the surface of aluminum or an aluminum alloy, wherein the anodic oxide film contains a group consisting of chromium ions, yttrium ions, zirconium ions, and magnesium ions. A corrosion-resistant member characterized in that the anodic oxide film is impregnated with at least one selected ion and then fired to form an oxide of the impregnated ion.
金属化合物からなるセラミックス前駆体の溶液を浸漬も
しくは塗布した後、加熱処理することにより、酸化物セ
ラミックスの絶縁膜を形成させたことを特徴とする耐食
部材。(2) An insulating film of oxide ceramics is formed on the outer layer of the corrosion-resistant member according to claim 1 by dipping or applying a solution of a ceramics precursor made of a polymerizable organometallic compound and then heat-treating it. A corrosion-resistant member characterized by:
または金属のカルボン酸塩である請求項２に記載の耐食
部材。(3) The corrosion-resistant member according to claim 2, wherein the polymerizable organometallic compound is a metal alkoxide or a metal carboxylate.
ム、イットリウム、ジルコニウムおよびマグネシウムか
らなる群より選ばれた少なくとも一種の金属を含むこと
を特徴とする請求項２に記載の耐食部材。(4) The corrosion-resistant member according to claim 2, wherein the polymerizable organometallic compound contains at least one metal selected from the group consisting of silicon, aluminum, yttrium, zirconium, and magnesium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8986890A JPH03287797A (en) | 1990-04-03 | 1990-04-03 | Corrosion resistant member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8986890A JPH03287797A (en) | 1990-04-03 | 1990-04-03 | Corrosion resistant member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03287797A true JPH03287797A (en) | 1991-12-18 |
Family
ID=13982750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8986890A Pending JPH03287797A (en) | 1990-04-03 | 1990-04-03 | Corrosion resistant member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03287797A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0648866A1 (en) * | 1993-10-15 | 1995-04-19 | Applied Materials, Inc. | Alumina coatings |
| US5580800A (en) * | 1993-03-22 | 1996-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of patterning aluminum containing group IIIb Element |
| US5830786A (en) * | 1993-02-22 | 1998-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring |
| US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
| US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
| US7479304B2 (en) | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
| US8016948B2 (en) | 2002-02-14 | 2011-09-13 | Applied Materials, Inc. | Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal |
| US8129029B2 (en) | 2007-12-21 | 2012-03-06 | Applied Materials, Inc. | Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating |
| US8367227B2 (en) | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
| JP2017526127A (en) * | 2014-08-07 | 2017-09-07 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェンＨｅｎｋｅｌ ＡＧ ＆ Ｃｏ． ＫＧａＡ | High temperature insulated aluminum conductor |
| US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
| US10840113B2 (en) | 2007-04-27 | 2020-11-17 | Applied Materials, Inc. | Method of forming a coated article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide |
-
1990
- 1990-04-03 JP JP8986890A patent/JPH03287797A/en active Pending
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5830786A (en) * | 1993-02-22 | 1998-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring |
| US5580800A (en) * | 1993-03-22 | 1996-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of patterning aluminum containing group IIIb Element |
| EP0648866A1 (en) * | 1993-10-15 | 1995-04-19 | Applied Materials, Inc. | Alumina coatings |
| US5705225A (en) * | 1993-10-15 | 1998-01-06 | Applied Materials, Inc. | Method of filling pores in anodized aluminum parts |
| US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
| US7479304B2 (en) | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
| US7846264B2 (en) | 2002-02-14 | 2010-12-07 | Applied Materials, Inc. | Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrate |
| US8016948B2 (en) | 2002-02-14 | 2011-09-13 | Applied Materials, Inc. | Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal |
| US8067067B2 (en) | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
| US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
| US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
| US10840113B2 (en) | 2007-04-27 | 2020-11-17 | Applied Materials, Inc. | Method of forming a coated article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide |
| US10840112B2 (en) | 2007-04-27 | 2020-11-17 | Applied Materials, Inc. | Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxide |
| US10847386B2 (en) | 2007-04-27 | 2020-11-24 | Applied Materials, Inc. | Method of forming a bulk article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide |
| US11373882B2 (en) | 2007-04-27 | 2022-06-28 | Applied Materials, Inc. | Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxide |
| US8367227B2 (en) | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
| US8871312B2 (en) | 2007-08-02 | 2014-10-28 | Applied Materials, Inc. | Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber |
| US8758858B2 (en) | 2007-12-21 | 2014-06-24 | Applied Materials, Inc. | Method of producing a plasma-resistant thermal oxide coating |
| US8129029B2 (en) | 2007-12-21 | 2012-03-06 | Applied Materials, Inc. | Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating |
| JP2017526127A (en) * | 2014-08-07 | 2017-09-07 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェンＨｅｎｋｅｌ ＡＧ ＆ Ｃｏ． ＫＧａＡ | High temperature insulated aluminum conductor |
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