JPH03290421A - Production of resin for encapsulation of semiconductor - Google Patents
Production of resin for encapsulation of semiconductorInfo
- Publication number
- JPH03290421A JPH03290421A JP2092128A JP9212890A JPH03290421A JP H03290421 A JPH03290421 A JP H03290421A JP 2092128 A JP2092128 A JP 2092128A JP 9212890 A JP9212890 A JP 9212890A JP H03290421 A JPH03290421 A JP H03290421A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- allylated
- polysiloxane
- reacting
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 38
- 239000011347 resin Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000005538 encapsulation Methods 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 33
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 24
- -1 polysiloxane Polymers 0.000 claims abstract description 22
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229920006272 aromatic hydrocarbon resin Polymers 0.000 claims abstract description 11
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 5
- 238000002844 melting Methods 0.000 claims abstract description 5
- 230000008018 melting Effects 0.000 claims abstract description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 18
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- 230000009477 glass transition Effects 0.000 abstract description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 11
- 229920003192 poly(bis maleimide) Polymers 0.000 description 10
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000012778 molding material Substances 0.000 description 8
- 238000005452 bending Methods 0.000 description 6
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BHELZAPQIKSEDF-UHFFFAOYSA-N allyl bromide Chemical compound BrCC=C BHELZAPQIKSEDF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- IPJGAEWUPXWFPL-UHFFFAOYSA-N 1-[3-(2,5-dioxopyrrol-1-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC(N2C(C=CC2=O)=O)=C1 IPJGAEWUPXWFPL-UHFFFAOYSA-N 0.000 description 1
- AQGZJQNZNONGKY-UHFFFAOYSA-N 1-[4-(2,5-dioxopyrrol-1-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=C(N2C(C=CC2=O)=O)C=C1 AQGZJQNZNONGKY-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Silicon Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はガラス転移点(以下Tgという)が高く、耐湿
性、相溶性に優れ、かつ低応力特性に優れた半導体封止
用樹脂の製造方法に関するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention is directed to the production of a resin for semiconductor encapsulation that has a high glass transition point (hereinafter referred to as Tg), excellent moisture resistance, compatibility, and low stress characteristics. It is about the method.
(従来技術)
近年IC,LSI、トランジスター、ダイオードなどの
半導体素子や電子回路等の封止には特性、コスト等の点
からエポキシ樹脂組成物が一般的に用いられている。(Prior Art) In recent years, epoxy resin compositions have been commonly used for sealing semiconductor elements such as ICs, LSIs, transistors, diodes, and electronic circuits from the viewpoint of characteristics, cost, and the like.
しかし、電子部品の量産性指向、高集積化や表面実装化
の方向に進んで来ておりこれに伴い封止樹脂に対する要
求は厳しくなってきている。However, as electronic components are becoming more mass-producible, more highly integrated, and more surface-mounted, demands on sealing resins are becoming more severe.
特に高集積化に伴うチップの大型化、パッケージの薄肉
化や表面実装時における半田浸漬(200〜300°C
)によって装置にクラックが発生し易くなっており、信
頼性向上のために半導体封止用樹脂としては低応力特性
と耐熱性が強く望まれている。In particular, chips become larger due to higher integration, packages become thinner, and solder immersion (200 to 300°C) during surface mounting is required.
), which makes it easy for devices to crack, and in order to improve reliability, it is strongly desired that resins for semiconductor encapsulation have low stress characteristics and heat resistance.
半導体封止用樹脂としては現在エポキシ樹脂が主流であ
るが、耐熱性という点ではエポキシ樹脂を用いている限
り改良に限界があり、表面実装時の半田浸漬後の信頼性
の高いものが得られていない。Epoxy resin is currently the mainstream resin for semiconductor encapsulation, but there are limits to its improvement in terms of heat resistance as long as epoxy resin is used, and it is difficult to obtain a highly reliable product after solder immersion during surface mounting. Not yet.
これらの半田耐熱性に対処するには樹脂特性として低応
力であり、かつTgが高く半田浴温度以上であることが
望まれている。In order to cope with these solder heat resistance, it is desired that the resin properties be low stress and high Tg that is higher than the solder bath temperature.
エポキシ樹脂に変わる高耐熱性を有する樹脂としてはマ
レイミド樹脂が注目されてきているが、ビスマレイミド
と芳香族ジアミンとの反応によって得られるアミン変性
マレイミド樹脂は、乾燥時の耐熱性には優れているが、
吸水率が大きく、吸湿時の半田浸漬でクラックを発生し
、信頼性に乏しい欠点がある。Maleimide resin is attracting attention as a resin with high heat resistance that can replace epoxy resin, but amine-modified maleimide resin obtained by the reaction of bismaleimide and aromatic diamine has excellent heat resistance during drying. but,
It has a high water absorption rate, and cracks occur when immersed in solder when moisture is absorbed, resulting in poor reliability.
マレイミド樹脂としては、この他に、ポリマレイミドと
アルケニルフェノール類またはアルケニルフェニルエー
テル類などを重合触媒存在下で反応させる例(特開昭5
2−994.58−117219.61−95012.
62−11716.63−230728号公報)もある
が、アミン変性マレイミド樹脂と同様に硬化物は堅いた
め、低応力特性に劣る欠点がある。Other maleimide resins include examples in which polymaleimide and alkenyl phenols or alkenyl phenyl ethers are reacted in the presence of a polymerization catalyst (Japanese Patent Application Laid-Open No.
2-994.58-117219.61-95012.
62-11716.63-230728), but like the amine-modified maleimide resin, the cured product is hard, so it has the disadvantage of poor low stress properties.
低応力特性の改善策として各種シリコーン化合物の添加
が試みられているが、相溶性が著しく劣り、強度が低下
し、吸水率が大きくて、耐湿性、信頼性に欠け、実用上
問題点が多く残る。Attempts have been made to add various silicone compounds as a measure to improve low-stress properties, but they have significantly poor compatibility, reduced strength, high water absorption, lack moisture resistance and reliability, and have many practical problems. remain.
(発明が解決しようとする課題)
本発明の目的とするところは相溶性が良く、般の特性を
低下させることなく、耐湿性、低応力特性に優れ、かつ
高耐熱性を有し、半田浸漬後の信頼性に非常に優れた半
導体封止用樹脂の製造方法を提供することにある。(Problems to be Solved by the Invention) The object of the present invention is to have good compatibility, excellent moisture resistance, low stress characteristics, and high heat resistance without deteriorating general characteristics, and to have solder immersion resistance. It is an object of the present invention to provide a method for producing a resin for semiconductor encapsulation that has excellent subsequent reliability.
(課題を解決するための手段)
本発明は、(A)ポリマレイミド100重量部と、(B
)下記式CI)で示されるジヒドロ・ポリシロキサンと
、
(k工、R2:炭素数1〜4のアルキル基又はフェニル
基
n:l〜100)
下記式(II )の組成で示されるアリル化フェノール
・芳香族炭化水素樹脂とを
(R3、L: −H又はメチル基
0< a、b 、c 、d <100がっ a+b+c
+d=100a、b、c、dは各組成の百分率を示す。(Means for Solving the Problems) The present invention comprises (A) 100 parts by weight of polymaleimide, and (B)
) A dihydro polysiloxane represented by the following formula CI), and (k, R2: alkyl group having 1 to 4 carbon atoms or phenyl group n: 1 to 100) an allylated phenol represented by the composition of the following formula (II)・Aromatic hydrocarbon resin (R3, L: -H or methyl group 0 < a, b, c, d < 100 a+b+c
+d=100a, b, c, d indicate the percentage of each composition.
)アリル基/ヒドロキシリル基(Si−H)の比が2/
1〜10/1で、ヒドロシリル基の反応率が80%以上
になるまで反応させて得られるアリル化ポリシロキサン
30〜300重量部とを、生成樹脂の融点が50〜12
0°Cになるまで反応させることを特徴とする半導体封
止用樹脂の製造方法である。) Allyl group/hydroxylyl group (Si-H) ratio is 2/
1 to 10/1 and 30 to 300 parts by weight of an allylated polysiloxane obtained by reacting until the reaction rate of the hydrosilyl group reaches 80% or more.
This is a method for producing a resin for semiconductor encapsulation, characterized in that the reaction is carried out until the temperature reaches 0°C.
(作用)
本発明において用いられるポリマレイミドの具体例とし
ては、N、N’−m−フェニレンビスマレイミド、N、
N’−p−フェニレンビスマレイミド、N、N’−m−
トルイレンビスマレイミド、N、N’−4,4’−ビフ
ェニレンビスマレイミド、N、N’ −4,4’−(3
,3’−ジメチル−ビフェニレンビスマレイミド、N、
N’−4,4’−(3,3’−ジメチルジフェニルメタ
ン〕ビスマレイミド、N、N’−4,4’−(3,3’
−ジェチルジフェニルメタン〕ビスマレイミド、N、N
’−4,4’−ジフェニルメタンビスマレイミド、N、
N’−4,4’−ジフェニルプロパンビスマレイミド、
N、N″−4,4′−ジフェニルエーテルビスマレイミ
ド、N、N’−3,3’−ジフェニルスルホンビスマレ
イミド、N、N’−4,4’−ジフェニルスルホンビス
マレイミド、一般式(m)又は(IV)で示される多官
能マレイミドなどを挙げることができる。これらは2種
以上含まれていても何ら差し支えない。(Function) Specific examples of the polymerimide used in the present invention include N,N'-m-phenylene bismaleimide, N,
N'-p-phenylene bismaleimide, N, N'-m-
Toluylene bismaleimide, N,N'-4,4'-biphenylene bismaleimide, N,N'-4,4'-(3
, 3'-dimethyl-biphenylene bismaleimide, N,
N'-4,4'-(3,3'-dimethyldiphenylmethane)bismaleimide, N,N'-4,4'-(3,3'
-jethyldiphenylmethane] bismaleimide, N, N
'-4,4'-diphenylmethane bismaleimide, N,
N'-4,4'-diphenylpropane bismaleimide,
N,N''-4,4'-diphenyl ether bismaleimide, N,N'-3,3'-diphenylsulfone bismaleimide, N,N'-4,4'-diphenylsulfone bismaleimide, general formula (m) or Examples include polyfunctional maleimide represented by (IV).There is no problem even if two or more types of these are contained.
(R5ニーH、アルキル基又はフェニル基 0<i
<10)(0<j<10)
本発明に用いられるジヒドロ・ポリシロキサンは下記式
CI)で示されるポリシロキサンであり、その重合度n
は1〜100の範囲のものである。(R5 knee H, alkyl group or phenyl group 0<i
<10) (0<j<10) The dihydro polysiloxane used in the present invention is a polysiloxane represented by the following formula CI), and its degree of polymerization n
ranges from 1 to 100.
(R工、R2:炭素数1〜4のアルキル基又はフェニル
基)
重合度が100より大きい場合、相溶性が低下してしま
う。なお、アリル基との反応において、ゲル化させない
範囲で、3官能以上のポリヒドロ・ポリシロキサンを併
用しても構わない。(R engineering, R2: alkyl group having 1 to 4 carbon atoms or phenyl group) If the degree of polymerization is greater than 100, the compatibility will decrease. In addition, in the reaction with the allyl group, trifunctional or higher functional polyhydro-polysiloxane may be used in combination as long as it does not cause gelation.
アリル化フェノール・芳香族炭化水素樹脂は、トルエン
樹脂、キシレン樹脂又はキシリレン・ジアルキルエーテ
ルとフェノール又はフェノール樹脂とを反応させて得ら
れるフェノール・芳香族炭化水素樹脂、例えば、フェノ
ール変性キシレン樹脂(三菱瓦斯化学■酸二カノールp
−tooなど)やフェノールアラルキル樹脂(三井東圧
■製ミレツクスX L−225など)を、塩化アjノル
又は臭化アリルと反応させ、アリル化したもので、下記
式〔11〕の組成で示されるもので、樹脂中にそれぞれ
の構造をもつ部分が全体としてa、b、c、dの比で存
在しているものである。Allylated phenol/aromatic hydrocarbon resin is a phenol/aromatic hydrocarbon resin obtained by reacting toluene resin, xylene resin, or xylylene dialkyl ether with phenol or phenol resin, such as phenol-modified xylene resin (Mitsubishi Gas Chemistry ■ Acid dicanol p
-too) or phenolic aralkyl resin (Mitsui Toatsu Co., Ltd.'s Millex The resin contains parts with each structure in the overall ratio of a, b, c, and d.
(R3、R4: −H又はメチル基
0<a、b、C,d<tooかつa+b+c+d=10
0a、b、c、dは、各組成の百分率(%)を示す)好
ましくは、10≦a≦70、lO≦b≦40、lO≦d
≦70が良い。(R3, R4: -H or methyl group 0<a, b, C, d<too and a+b+c+d=10
0a, b, c, d indicate the percentage (%) of each composition) Preferably, 10≦a≦70, lO≦b≦40, lO≦d
≦70 is good.
a成分は、熱時強度の向上と吸水率を下げるのに効果が
あるが、ポリマレイミドとの樹脂生成反応においては、
殆ど反応しないため、多過ぎると樹脂が固形化せず、相
溶性、作業性が悪化する。Component a is effective in improving heat strength and lowering water absorption, but in the resin production reaction with polymaleimide,
Since there is almost no reaction, if the amount is too large, the resin will not solidify, resulting in poor compatibility and workability.
b成分は、ポリマレイミドとの樹脂生成反応においてマ
レイミド基と反応し、ポリマレイミドとポリシロキサン
との相溶性を改善する重要な成分である。しかし、多過
ぎると硬化物中にフェノール性水酸基が増えるため、吸
水率が大きくなって好ましくない。Component b is an important component that reacts with maleimide groups in the resin production reaction with polymaleimide and improves the compatibility between polymaleimide and polysiloxane. However, if the amount is too large, the number of phenolic hydroxyl groups in the cured product increases, resulting in an increase in water absorption, which is not preferable.
d成分は、吸水率を下げ、信頼性の向上に著しい効果が
ある。しかし、多過ぎると樹脂生成反応及び硬化反応に
おける反応性が悪化して封止材料に適さない。The d component has a remarkable effect on lowering the water absorption rate and improving reliability. However, if the amount is too large, the reactivity in the resin production reaction and curing reaction will deteriorate, making it unsuitable for use as a sealing material.
ジヒドロ・ポリシロキサンとアリル化フェノール・芳香
族炭化水素樹脂との反応におけるアリル基/ヒドロキシ
リル基(Si−H)の比は、271〜10/1が良い。The ratio of allyl group/hydroxylyl group (Si-H) in the reaction between dihydro polysiloxane and allylated phenol/aromatic hydrocarbon resin is preferably 271 to 10/1.
アリル基が少な過ぎると、ポリマレイミドとの相溶性、
成形性、硬化物の機械強度が悪化する。多過ぎると、逆
にポリシロキサンが減るので、低応力特性が改善されな
い。If the number of allyl groups is too small, compatibility with polymaleimide,
Moldability and mechanical strength of the cured product deteriorate. If it is too large, the amount of polysiloxane will be reduced and the low stress properties will not be improved.
反応条件は、特に限定されるものではないが、−例を示
すと、塩化白金酸存在下、トルエン溶媒中で90°C〜
還流温度で反応させ、反応後場化白金酸を水/トルエン
による抽出洗浄で除去し、トルエンを留去してアリル化
ポリシロキサンを得る。The reaction conditions are not particularly limited, but for example, in the presence of chloroplatinic acid in a toluene solvent at 90°C to
The reaction is carried out at a reflux temperature, and after the reaction, the converted platinic acid is removed by extraction and washing with water/toluene, and the toluene is distilled off to obtain an allylated polysiloxane.
反応は、ヒドロシリル基(Si−H)の反応率が80%
以上になるまで行うのが良い。反応率が80%未満の場
合は、成形品に遊離のポリシロキサン成分が滲み出し、
外観を悪化させたり金型くもりが発生する。In the reaction, the reaction rate of hydrosilyl group (Si-H) was 80%.
It is best to do this until it reaches the above level. If the reaction rate is less than 80%, free polysiloxane components will ooze out into the molded product.
This may deteriorate the appearance or cause mold cloudiness.
ポリマレイミドとアリル化ポリシロキサンとの反応は、
反応条件を特に限定するものではないが、−例を示すと
、アリル化ポリシロキサンを130〜150°Cに加熱
し、これにポリマレイミドを添加して行う。アリル化ポ
リシロキサンの量は、ポリマレイミド100重量部に対
し、30〜300重量部が良い。The reaction between polymaleimide and allylated polysiloxane is
Although the reaction conditions are not particularly limited, for example, the reaction is carried out by heating allylated polysiloxane to 130 to 150°C and adding polymaleimide thereto. The amount of allylated polysiloxane is preferably 30 to 300 parts by weight per 100 parts by weight of the polymaleimide.
少な過ぎると低応力特性が得られない。多過ぎると機械
強度、Tgが下がり、半田浸漬時にクラックを発生する
。反応の終点は、得られた樹脂の融点が50〜120°
Cの範囲となるまで反応させる。なお、反応の終点を確
認するには、反応系より少量の樹脂を取り出し、冷却し
、融点を測定し、確認する。If it is too small, low stress characteristics cannot be obtained. If it is too large, the mechanical strength and Tg will decrease and cracks will occur during solder immersion. The end point of the reaction is when the melting point of the obtained resin is 50 to 120 degrees.
React until it reaches the range of C. In addition, in order to confirm the end point of the reaction, a small amount of resin is taken out from the reaction system, cooled, and the melting point is measured and confirmed.
又、得られた樹脂を用いて成形材料化するには硬化促進
剤、エポキシ樹脂、無機充填材、滑剤、難燃剤、離型剤
、シランカップリング剤等を必要に応じて適宜配合添加
し、加熱混練することによって材料化できる。In addition, in order to make a molding material using the obtained resin, a curing accelerator, epoxy resin, inorganic filler, lubricant, flame retardant, mold release agent, silane coupling agent, etc. are appropriately mixed and added as necessary. It can be made into a material by heating and kneading.
本発明の半導体封止用樹脂組成物を成形材料として製造
する一般的な方法としては、これらの必須成分に各種添
加剤を加えて均一に混合した組成物をニーグー、熱ロー
ル等により混線処理を行い、冷却後粉砕して成形材料と
する。A general method for manufacturing the resin composition for semiconductor encapsulation of the present invention as a molding material is to add various additives to these essential components and mix the composition uniformly, and then subject the composition to cross-contact treatment using a niegu, hot roll, etc. After cooling, it is crushed to make a molding material.
得られた成形材料を半導体の封止用として用いれば高T
gであり、しかも低応力特性に優れ、非常に信頼性の高
い半導体封止用樹脂組成物を得ることができる。If the obtained molding material is used for encapsulating semiconductors, high T
In addition, it is possible to obtain a resin composition for semiconductor encapsulation which has excellent low stress characteristics and is highly reliable.
(実施例)
1アリル化フエノール・芳香族炭化水素樹脂の合成1合
成例1
撹拌装置、還流冷却器、温度計及び滴下ロートを付けた
反応容器に、第1表の処方に従って、水酸化カリウムと
、水/アセトン(1/1 )の混合溶媒を入れて溶解さ
せ、これにフェノール変性キシレン樹脂を添加し、溶解
させた。(Example) Synthesis 1 of 1-allylated phenol/aromatic hydrocarbon resin Synthesis Example 1 Potassium hydroxide and , a mixed solvent of water/acetone (1/1) was added and dissolved, and the phenol-modified xylene resin was added and dissolved.
この溶液を加熱し、臭化アリルを添加して、還流下3時
間反応させた。その後、塩酸で中和して、アセトンと未
反応の臭化アリルを留去し、トルエン1リツトルを添加
した。分液ロートに移し、水洗を3回行い、エバポレー
ターで溶媒を除去した。The solution was heated, allyl bromide was added, and the mixture was allowed to react under reflux for 3 hours. Thereafter, the mixture was neutralized with hydrochloric acid, allyl bromide that had not reacted with acetone was distilled off, and 1 liter of toluene was added. The mixture was transferred to a separating funnel, washed with water three times, and the solvent was removed using an evaporator.
更に、175°C14時間加熱処理をして、アリル化フ
ェノール芳香族炭化水素樹脂を得た。生成物の組成は第
1表に示した。Further, heat treatment was performed at 175° C. for 14 hours to obtain an allylated phenol aromatic hydrocarbon resin. The composition of the product is shown in Table 1.
参考例1
合成例1のフェノール変性キシレン樹脂を、フェノール
樹脂に置き換えて、同様に反応させたものである。Reference Example 1 The phenol-modified xylene resin in Synthesis Example 1 was replaced with a phenol resin, and the reaction was carried out in the same manner.
実施例1〜2
撹拌装置、還流冷却器及び温度計を付けた反応容器に、
合成例1のアリル化フェノール・芳香族炭化水素樹脂と
トルエンを第2表の処方に従って入れ、均一に溶解して
から、塩化白金酸イソプロパツール溶液を添加した。こ
れにジヒドロポリシロキサンを加え、90°Cで2時間
反応させた。反応後、分液ロートに移し、水洗を3回行
い、エバポレーターで溶媒を除去して、アリル化ポリシ
ロキサンを得た。ヒドロシリル基の反応率はいずれも8
0%以上である。Examples 1-2 A reaction vessel equipped with a stirrer, a reflux condenser and a thermometer was
The allylated phenol/aromatic hydrocarbon resin of Synthesis Example 1 and toluene were added according to the recipe in Table 2, uniformly dissolved, and then the isopropanol chloroplatinate solution was added. Dihydropolysiloxane was added to this and reacted at 90°C for 2 hours. After the reaction, the mixture was transferred to a separating funnel, washed with water three times, and the solvent was removed using an evaporator to obtain allylated polysiloxane. The reaction rate of hydrosilyl group is 8 in both cases.
It is 0% or more.
次に、撹拌装置、減圧蒸留装置及び温度計を付けた反応
容器に、得られたアリル化ポリシロキサンを第3表の処
方に従って入れ、130°Cに加熱してから、ポリマレ
イミドを加え、減圧下(約20mmHg)で反応させた
。得られたシリコーン変性マレイミド樹脂は、均質で、
融点を第3表に示した。Next, the obtained allylated polysiloxane was placed in a reaction vessel equipped with a stirring device, a vacuum distillation device, and a thermometer according to the recipe in Table 3, heated to 130°C, and then the polymaleimide was added, and the pressure was reduced. The reaction was carried out under (approximately 20 mmHg). The obtained silicone-modified maleimide resin is homogeneous and
The melting points are shown in Table 3.
比較例1
実施例1のアリル化フェノール芳香族炭化水素樹脂を減
らし、ジヒドロポリシロキサンの量を増やして、実施例
1と同様に反応させた。得られたシリコーン変性マレイ
ミド樹脂は、第3表に示したように不均質で、油状のシ
リコーン成分が滲み出していた。Comparative Example 1 A reaction was carried out in the same manner as in Example 1, except that the amount of the allylated phenol aromatic hydrocarbon resin in Example 1 was reduced and the amount of dihydropolysiloxane was increased. The obtained silicone-modified maleimide resin was heterogeneous as shown in Table 3, and an oily silicone component exuded.
比較例2
重合度(n)の大きいジヒドロポリシロキサンを用いて
、同様に反応させた。相溶性が非常に悪く、得られたシ
リコーン変性マレイミド樹脂は不均質で、油状のシリコ
ーン成分の滲み出しもあった。Comparative Example 2 A similar reaction was carried out using dihydropolysiloxane having a high degree of polymerization (n). The compatibility was very poor, and the resulting silicone-modified maleimide resin was heterogeneous, with oily silicone components exuding out.
比較例3 参考例1を用いて、実施例1と同様に反応させた。Comparative example 3 Using Reference Example 1, a reaction was carried out in the same manner as in Example 1.
実施例3〜4
第4表に示す配合に従って、実施例1〜2で得たシリコ
ーン変性マレイミド樹脂に、シリカ粉末、硬化促進剤、
アミノシラン、着色剤および離型剤を加え、熱ロールで
混練して成形材料を得た。得られた成形材料をトランス
ファー成形により180°C93分で成形しフクレの無
い光沢の有る成形品が得られた。この成形品をさらに1
80°C18時間後硬化を行い特性を評価した。結果を
第4表に示す。Examples 3-4 According to the formulations shown in Table 4, silica powder, curing accelerator,
Aminosilane, a coloring agent, and a mold release agent were added, and the mixture was kneaded with hot rolls to obtain a molding material. The obtained molding material was molded by transfer molding at 180° C. for 93 minutes to obtain a glossy molded product without blisters. Add 1 more of this molded product
After curing at 80°C for 18 hours, the properties were evaluated. The results are shown in Table 4.
実施例1〜2の樹脂を用いた実施例3〜4の成形材料は
、シリコーンを含まない比較例とに比べ常温での曲げ弾
性率が小さく、低応力で、内部応力も小さい。しかも、
ガラス転移点温度が高く、260°Cでの曲げ強度も大
きく、耐熱性、耐半田クラック性に優れ、吸水率も小さ
い。The molding materials of Examples 3 and 4 using the resins of Examples 1 and 2 have a lower flexural modulus at room temperature, lower stress, and lower internal stress than the comparative example that does not contain silicone. Moreover,
It has a high glass transition temperature, high bending strength at 260°C, excellent heat resistance and solder crack resistance, and low water absorption.
比較例5〜8
実施例3〜4と比較のため、第4表に示す配合で同様に
成形材料を作成し成形した。Comparative Examples 5-8 For comparison with Examples 3-4, molding materials were similarly prepared and molded using the formulations shown in Table 4.
比較例5は、比較例1の樹脂(アリル基/ヒドロシリル
基= 171 )を用いたものであるが、金型くもりな
どがあって成形性及び成形品の外観が悪く、曲げ強度も
低い。Comparative Example 5 used the resin of Comparative Example 1 (allyl group/hydrosilyl group = 171), but the mold was cloudy, resulting in poor moldability and poor appearance of the molded product, and low bending strength.
比較例6は、参考例1の芳香族炭化水素を含まないフェ
ノール樹脂
を用いたもので、曲げ強度は大きく、ガラス転移温度は
高いが、吸水率が大きいため、耐半田クラック性は充分
でない。Comparative Example 6 uses the aromatic hydrocarbon-free phenolic resin of Reference Example 1, and has high bending strength and a high glass transition temperature, but has a high water absorption rate and therefore does not have sufficient solder crack resistance.
比較例7は、実施例3とほぼ同じ組成であるが、単に配
合時に混ぜたものである。比較例5と同様に成形品の外
観が悪く、曲げ強度が低い。Comparative Example 7 has almost the same composition as Example 3, but was simply mixed at the time of blending. Similar to Comparative Example 5, the appearance of the molded product was poor and the bending strength was low.
比較例8は、ポリシロキサンを含まないものである。成
形品の外観、曲げ強度、ガラス転移温度は比較例6と同
様に良好であるが、曲げ弾性率と吸水率が大きいため、
耐半田クラック性は充分でない。Comparative Example 8 does not contain polysiloxane. The appearance, bending strength, and glass transition temperature of the molded product are as good as those in Comparative Example 6, but the bending elastic modulus and water absorption are large;
Solder crack resistance is not sufficient.
良く、かつ低応力であり耐ヒートサイクル性にも優れて
おり、半導体封止用樹脂組成物とし、て非常に信頼性の
高い優れたものである。It has good properties, low stress, and excellent heat cycle resistance, making it an excellent and extremely reliable resin composition for semiconductor encapsulation.
(発明の効果)
本発明の製造方法による半導体封止用樹脂を用いた成形
物は高Tgであり、耐湿性及び熱時の強度に優れている
ため封止体の耐半田クラック性が第
1
表
手続補正書
(1)特許請求の範囲を別紙の通りに補正する。(Effects of the Invention) The molded product using the resin for semiconductor encapsulation produced by the manufacturing method of the present invention has a high Tg and is excellent in moisture resistance and strength under heat, so the solder crack resistance of the encapsulated body is the best. Table procedure amendment (1) Amend the claims as per the attached sheet.
平成2年 7月 11日July 11, 1990
Claims (1)
記式〔 I 〕で示されるジヒドロ・ポリシロキサンと、 ▲数式、化学式、表等があります▼・・・・・・〔 I
〕 (R_1、R_2:炭素数1〜4のアルキル基又はフェ
ニル基 n:1〜100) 下記式〔II〕の組成で示されるアリル化フェノール・芳
香族炭化水素樹脂とを ▲数式、化学式、表等があります▼・・・・・・〔II〕 (R_3、R_4:−H又はメチル基 0<a、b、c、d<100かつa+b+c+d=10
0a、b、c、dは各組成の百分率を示す。)アリル基
/ヒドロキシリル基(Si−H)の比が2/1〜10/
1で、ヒドロシリル基の反応率が80%以上になるまで
反応させて得られるアリル化ポリシロキサン30〜30
0重量部とを、生成樹脂の融点が50〜120℃になる
まで反応させることを特徴とする半導体封止用樹脂の製
造方法。(1) (A) 100 parts by weight of polymaleimide, (B) dihydro polysiloxane represented by the following formula [I], ▲There are mathematical formulas, chemical formulas, tables, etc.▼・・・・・・〔I
] (R_1, R_2: alkyl group having 1 to 4 carbon atoms or phenyl group n: 1 to 100) allylated phenol/aromatic hydrocarbon resin represented by the composition of the following formula [II] ▲ mathematical formula, chemical formula, table etc.▼・・・・・・[II] (R_3, R_4: -H or methyl group 0<a, b, c, d<100 and a+b+c+d=10
0a, b, c, and d indicate the percentage of each composition. ) Allyl group/hydroxylyl group (Si-H) ratio is 2/1 to 10/
1, allylated polysiloxane 30 to 30 obtained by reacting until the reaction rate of the hydrosilyl group reaches 80% or more
1. A method for producing a resin for semiconductor encapsulation, characterized by reacting 0 parts by weight with 0 parts by weight until the melting point of the resulting resin reaches 50 to 120°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2092128A JP2857216B2 (en) | 1990-04-09 | 1990-04-09 | Method for producing resin for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2092128A JP2857216B2 (en) | 1990-04-09 | 1990-04-09 | Method for producing resin for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03290421A true JPH03290421A (en) | 1991-12-20 |
| JP2857216B2 JP2857216B2 (en) | 1999-02-17 |
Family
ID=14045800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2092128A Expired - Lifetime JP2857216B2 (en) | 1990-04-09 | 1990-04-09 | Method for producing resin for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2857216B2 (en) |
-
1990
- 1990-04-09 JP JP2092128A patent/JP2857216B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2857216B2 (en) | 1999-02-17 |
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