JPH0329058B2 - - Google Patents
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- Publication number
- JPH0329058B2 JPH0329058B2 JP4042683A JP4042683A JPH0329058B2 JP H0329058 B2 JPH0329058 B2 JP H0329058B2 JP 4042683 A JP4042683 A JP 4042683A JP 4042683 A JP4042683 A JP 4042683A JP H0329058 B2 JPH0329058 B2 JP H0329058B2
- Authority
- JP
- Japan
- Prior art keywords
- formula
- liquid crystal
- present
- viscosity
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Liquid Crystal Substances (AREA)
Description
本発明は弱い正の誘電異方性を有する新規液晶
物質及びそれを含有する液晶組成物に関する。
液晶を使用した表示素子は時計、電卓などに広
く使用されている。この液晶表示素子は液晶物質
の光学異方性及び誘電異方性という性質を利用し
たもので、液晶相にはネマチツク液晶相、スメク
チツク液晶相、コレステリツク液晶相があり、そ
のうちネマチツク液晶を利用したものが最も広く
実用化されている。即ちそれらにはTN(ねじれ
ネマチツク)型、DS型(動的散乱型)、ゲスト・
ホスト型、DAP型などがあり、それぞれに使用
される液晶物質に要求され性質は異る。これら表
示素子に使用される液晶物質は自然界のなるべく
広い範囲で液晶相を示すものが望ましく、現在の
ところ単一物質でその様な条件をみたす様な物質
はなく、数種の液晶物質又は非液晶物質を混合し
て実用に供している。これらの物質は水分、光、
熱空気等に対しても安定であることを要求され、
更に表示素子を駆動させる必要なしきい電圧、飽
和電圧がなるべく低いこと、又応答速度を早くす
るためには粘度が出来るだけ低いことが望まし
い。さらに液晶温度範囲が高温の方に広くするた
めには高融点の液晶物質を成分として使用する必
要があるが、一般に高融点の液晶物質は粘度が高
く、従つてそれを含む液晶組成物も粘度が高くな
るので、高温、例えば80℃位まで使用出来る様な
液晶表示素子の応答速度、特に低温でのそれは著
るしくおそくなる傾向にあつた。ここに本発明者
らは低粘性でかつ組成物の一成分として加えると
結晶を析出しにくくする液晶物質を見つけ本発明
に到つた。
即ち本発明は一般式
(上式中Rは炭素数2〜8のアルキル基を示
し、
The present invention relates to a novel liquid crystal material having weak positive dielectric anisotropy and a liquid crystal composition containing the same. Display elements using liquid crystals are widely used in watches, calculators, etc. This liquid crystal display element utilizes the properties of optical anisotropy and dielectric anisotropy of liquid crystal materials, and there are three liquid crystal phases: nematic liquid crystal phase, smectic liquid crystal phase, and cholesteric liquid crystal phase. is the most widely put into practical use. Namely, they include TN (twisted nematic) type, DS type (dynamic scattering type), guest・
There are host type, DAP type, etc., and each type has different properties depending on the requirements of the liquid crystal material used. It is desirable that the liquid crystal substances used in these display elements exhibit a liquid crystal phase over as wide a range as possible in the natural world.Currently, there is no single substance that satisfies such conditions, and several types of liquid crystal substances or non-liquid crystal substances are available. It is put into practical use by mixing liquid crystal materials. These substances include water, light,
It is required to be stable against hot air, etc.
Furthermore, it is desirable that the threshold voltage and saturation voltage required to drive the display element be as low as possible, and that the viscosity be as low as possible in order to increase the response speed. Furthermore, in order to widen the liquid crystal temperature range toward higher temperatures, it is necessary to use a liquid crystal substance with a high melting point as a component, but liquid crystal substances with a high melting point generally have a high viscosity, and therefore the liquid crystal composition containing it also has a high viscosity. As a result, the response speed of liquid crystal display elements that can be used at high temperatures, for example, up to about 80° C., particularly at low temperatures, has tended to become significantly slower. The present inventors discovered a liquid crystal substance that has low viscosity and makes it difficult for crystals to precipitate when added as a component of a composition, and thus arrived at the present invention. That is, the present invention is based on the general formula (In the above formula, R represents an alkyl group having 2 to 8 carbon atoms,
【式】及び[Formula] and
【式】はそれぞ れ[Formula] is Re
【式】又は[Formula] or
【式】を示すが、[Formula] is shown,
【式】が[Formula] is
【式】の場合はIn the case of [formula]
【式】は【ceremony
【式】である。)で表
わされる3−トリフルオロメチルフエニル基を有
するエステル誘導体及びそれを含有する液晶組成
物である。
本発明の化合物は高い透明点を有し、例えば本
発明の化合物の一つであるトランス−4−(トラ
ンス−4′−プロピルシクロヘキシル)シクロヘキ
サンカルボン酸−3−トリフルオロメチルフエニ
ルエステルは液晶相を示し、ネマチツク−透明点
は44.8℃で、これを組成物の成分として加えるこ
とによりその組成物の粘度を下げ、ネマチツク−
透明点をそれほど下げずにできる。又本発明の化
合物の誘電異方性値は+1程度であるが、組成物
のしきい値電圧、飽和電圧をそれほど変化させな
い。又水分、熱、光等に対する安定性も良好であ
る。
次に本発明の化合物の製造法を示す。それぞれ
に対応するカルボン酸クロリドとビリジン存在
下、3−トリフルオロメチルフエノールと反応し
てそれぞれに対応するエステル誘導体とする。化
学式で示すと、
(上式中、R,[Formula]. ) and a liquid crystal composition containing the ester derivative having a 3-trifluoromethylphenyl group. The compounds of the present invention have a high clearing point, for example, one of the compounds of the present invention, trans-4-(trans-4'-propylcyclohexyl)cyclohexanecarboxylic acid-3-trifluoromethylphenyl ester, has a liquid crystal phase. It has a nematic clearing point of 44.8°C, and its addition as a component of the composition lowers the viscosity of the composition, resulting in a nematic clearing point of 44.8°C.
This can be done without lowering the clearing point too much. Further, although the dielectric anisotropy value of the compound of the present invention is about +1, it does not change the threshold voltage and saturation voltage of the composition so much. It also has good stability against moisture, heat, light, etc. Next, a method for producing the compound of the present invention will be described. The ester derivatives are reacted with 3-trifluoromethylphenol in the presence of the corresponding carboxylic acid chloride and pyridine to form the corresponding ester derivatives. Shown as a chemical formula, (In the above formula, R,
【式】【formula】
【式】は前記に同じ)以下実施例により
本発明の化合物につき更に詳細に説明する。
各例中、結晶相をC、スメクチツク相をSm、
透明相をI、融点をm.p.、ネマチツク相をNと略
記する。
実施例 1
〔4−ペンチルビフエニリル−4′−カルボン酸
−3−トリフルオロメチルフエニルエステルの製
造〕
3−トリフルオロメチルフエノール1.6gをピ
リジン10mlに溶解し、よく振りまぜながら4−ペ
ンチルビフエニリル−4′−カルボン酸クロリド
2.9gを加えた。この反応液を一晩放置後100mlの
水にあけ、トルエン100mlで油状物を抽出した。
トルエン層を6N−HClで、ついで2N−NaOHで
洗浄した後、更に中性になるまで水洗してから
過し、減圧にしてトルエンを留去した。残つた結
晶をエタノールで再結晶さて目的物である4−ペ
ンチルビフエニリル−4′−カルボン酸−3−トリ
フルオロメチルフエニルエステルを得た。
収量2.1g、収率51%、C−Sm点は68.6℃、
Sm−I点は76.1℃であつた。
実施例 2〜4
実施例1に於ける4−ペンチルビフエニリル−
4′−カルボン酸クロリドの代りにそれぞれに対応
するカルボン酸クロリドを0.01モル用いて実施例
1に準じた操作を行ない目的の化合物を得た。そ
れらの結果を実施例1と併せて第1表に示す。[Formula] is the same as above) The compounds of the present invention will be explained in more detail with reference to Examples below. In each example, the crystal phase is C, the smectic phase is Sm,
The transparent phase is abbreviated as I, the melting point as mp, and the nematic phase as N. Example 1 [Production of 4-pentylbiphenyl-4'-carboxylic acid-3-trifluoromethylphenyl ester] 1.6 g of 3-trifluoromethylphenol was dissolved in 10 ml of pyridine, and while stirring well, 4-pentyl Biphenylyl-4'-carboxylic acid chloride
Added 2.9g. This reaction solution was left overnight, poured into 100 ml of water, and an oily substance was extracted with 100 ml of toluene.
The toluene layer was washed with 6N-HCl, then with 2N-NaOH, and then with water until it became neutral, filtered, and the toluene was distilled off under reduced pressure. The remaining crystals were recrystallized from ethanol to obtain the desired product, 4-pentylbiphenyl-4'-carboxylic acid-3-trifluoromethylphenyl ester. Yield 2.1g, yield 51%, C-Sm point 68.6℃,
The Sm-I point was 76.1°C. Examples 2 to 4 4-Pentylbiphenylyl in Example 1
The desired compound was obtained by carrying out the same procedure as in Example 1, using 0.01 mol of the corresponding carboxylic acid chloride in place of the 4'-carboxylic acid chloride. The results are shown in Table 1 together with Example 1.
【表】
実施例 5(使用例)
〔4−ペンチル−4′−シアノビフエニル 51%
(重量、以下同じ)
〔4−ヘプチル−4′−シアノビフエニル 32%
〔4−オクチルオキシ−4′−シアノビフエニル
17%
なる組成の液晶混合物のN−I点は44℃、粘度は
20℃で40cp、誘電異方性値は+12.4であつた。そ
れをツイステツド・ネマチツクセルに用いたとき
のしきい電圧は1.65V、飽和電圧は2.31Vである。
この液晶混合物90重量部は本発明実施例3とト
ランス−4−(トランス−4′−ヘプチルシクロヘ
キシル)シクロヘキサンカルボン酸−3−トリフ
ルオロフエニルエステル10重量部を加えた液晶混
合物のN−1点は46℃に上昇し、誘電異方性値は
+11.2、粘度は20℃で39cpであつた。又、ツイス
テツド・ネマチツクセルにしたときのしきい電圧
は1.60V、飽和電圧は2.30Vで少し低くなつた。[Table] Example 5 (Usage example) [4-pentyl-4'-cyanobiphenyl 51% (weight, same below) [4-heptyl-4'-cyanobiphenyl 32% [4-octyloxy-4'-cyanobiphenyl]
The N-I point of a liquid crystal mixture with a composition of 17% is 44℃, and the viscosity is
The dielectric anisotropy value was 40 cp and +12.4 at 20°C. When it is used in a twisted nematic cell, the threshold voltage is 1.65V and the saturation voltage is 2.31V. 90 parts by weight of this liquid crystal mixture is the N-1 point of the liquid crystal mixture to which Example 3 of the present invention and 10 parts by weight of trans-4-(trans-4'-heptylcyclohexyl)cyclohexanecarboxylic acid-3-trifluorophenyl ester are added. The temperature rose to 46°C, the dielectric anisotropy value was +11.2, and the viscosity was 39 cp at 20°C. Also, when using a twisted nematic cell, the threshold voltage was 1.60V, and the saturation voltage was slightly lower at 2.30V.
Claims (1)
し、【式】及び【式】はそれぞ れ【式】又は【式】を示すが、 【式】が【式】の場合は 【式】は【式】である) で表わされる3−トリフルオロメチルフエニル基
を有するエステル誘導体。 2 一般式 (上式中Rは炭素数2〜8のアルキル基を示
し、【式】及び【式】はそれぞ れ【式】又は【式】を示すが、 【式】が【式】の場合は 【式】は【式】である。) で表わされる3−トリフルオロメチルフエニル基
を有するエステル誘導体を少くとも一種含有する
ことを特徴とする液晶組成物。[Claims] 1. General formula (In the above formula, R represents an alkyl group having 2 to 8 carbon atoms, and [formula] and [formula] represent [formula] or [formula], respectively, but if [formula] is [formula], then [formula] is [Formula]) An ester derivative having a 3-trifluoromethylphenyl group represented by: 2 General formula (In the above formula, R represents an alkyl group having 2 to 8 carbon atoms, and [formula] and [formula] represent [formula] or [formula], respectively, but if [formula] is [formula], then [formula] is [Formula].) A liquid crystal composition comprising at least one ester derivative having a 3-trifluoromethylphenyl group represented by the following formula.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4042683A JPS59167540A (en) | 1983-03-11 | 1983-03-11 | Ester derivative |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4042683A JPS59167540A (en) | 1983-03-11 | 1983-03-11 | Ester derivative |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59167540A JPS59167540A (en) | 1984-09-21 |
| JPH0329058B2 true JPH0329058B2 (en) | 1991-04-23 |
Family
ID=12580322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4042683A Granted JPS59167540A (en) | 1983-03-11 | 1983-03-11 | Ester derivative |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59167540A (en) |
-
1983
- 1983-03-11 JP JP4042683A patent/JPS59167540A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59167540A (en) | 1984-09-21 |
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