JPH03295236A - Substrate cleaning method and device - Google Patents
Substrate cleaning method and deviceInfo
- Publication number
- JPH03295236A JPH03295236A JP9618090A JP9618090A JPH03295236A JP H03295236 A JPH03295236 A JP H03295236A JP 9618090 A JP9618090 A JP 9618090A JP 9618090 A JP9618090 A JP 9618090A JP H03295236 A JPH03295236 A JP H03295236A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning
- gas
- liquefied gas
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体ウェハ表面の微粒子や付着物あるいは
実装プリント板に残留するノ1ンダフラックスなどの基
板表面の汚染物質を、液化ガスを噴射して除去する基板
の洗浄方法及び装置に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention uses liquefied gas to remove contaminants from the substrate surface, such as fine particles and deposits on the surface of a semiconductor wafer, and powder flux remaining on a mounted printed board. The present invention relates to a method and apparatus for cleaning a substrate.
半導体ウェハ表面の汚染物を除去することは、半導体の
製造工程あるいは完成品の品質上重大な問題である。例
えば、半導体ウエノ\はSi単結晶板に5iOz、Si
Nあるいは^1などの保護膜を形成し、その表面に溝を
掘って回路を形成するが、これらの製造過程において基
板表面への汚染物の付着は避られす、有効な洗浄法が要
求される。Removing contaminants from the surface of semiconductor wafers is a serious problem in the semiconductor manufacturing process or in the quality of finished products. For example, the semiconductor ueno\ is a Si single crystal plate with 5iOz, Si
A protective film, such as N or Ru.
又、磁気あるいは光ディスクなどの分野も同様で、磁気
ディスクを例にとれば、^1、^1−Mg合金の表面に
付着する油脂、その他の有機物の洗浄は、その後の薄膜
形成にとって不可欠である。The same is true in fields such as magnetic and optical disks; taking magnetic disks as an example, cleaning oil and other organic matter adhering to the surface of the ^1, ^1-Mg alloy is essential for subsequent thin film formation. .
一方、厳密な品質管理を行い製造された、例えばIC,
LSIなど半導体チップは、回路ノ〈ターンを作成した
プリント板に/’%ンダ付けで装着されるが、ハンダ付
は後にノ\ンダフラツクス残渣またはハンダボールが残
り、部品やプリント板の信頼性に影響を与える為、これ
らの除去・洗浄が必要である。以下、プリント板を中心
に説明する。On the other hand, for example, ICs manufactured under strict quality control,
Semiconductor chips such as LSIs are mounted on printed circuit boards with circuit turns by soldering, but soldering leaves behind solder flux residue or solder balls, which affects the reliability of parts and printed boards. It is necessary to remove and clean these in order to give The following will mainly explain the printed board.
ハンダは5n60重量%、Pb40重量%が主で、20
0〜250メツシユ以下のノ\ンダ粉末とフラックス及
びバインダーなどを、均一に混合したペースト状の塗布
可能な混合物が使用される。フラックスはロジン系が主
で、塩素含有がJISに規定されている0、 1〜0.
5重量%のものが使用されている。従来、プリント板の
実装は、ハンダペーストをスクリーン印刷法でプリント
板に塗布し、これにIC,LSIなど半導体部品を搭載
してハンダ付けする。ハンダ付けはプリント板、及び搭
載した部品全体を加熱するりフロー法が広く採用されて
いる。しかし、リフローハンダ付後、前述のハンダフラ
ックス残渣やハンダボールが残る。このため、ロジン系
のフラックスの除去洗浄には、主にフロン、トリクロロ
エチレンなど有機溶剤が用いられている。The solder is mainly 5N60% by weight, Pb40% by weight, and 20% by weight.
A paste-like spreadable mixture is used, which is a uniform mixture of 0 to 250 mesh powder, flux, binder, and the like. The flux is mainly rosin type, and the chlorine content is 0, 1 to 0 as specified by JIS.
5% by weight is used. Conventionally, when mounting a printed board, solder paste is applied to the printed board using a screen printing method, and semiconductor components such as ICs and LSIs are mounted and soldered onto the printed board. For soldering, the soldering method, which heats the printed board and the entire mounted components, is widely used. However, after reflow soldering, the aforementioned solder flux residue and solder balls remain. For this reason, organic solvents such as fluorocarbons and trichlorethylene are mainly used to remove and clean rosin-based fluxes.
洗浄方法としては、(1)前記溶剤中に浸漬して洗浄す
る浸漬洗浄、(2)溶剤中に超音波振動を付加した超音
波洗浄、(3)溶剤を高圧スプレーで基板に吹き付ける
スプレー洗浄、(4)溶剤の蒸気により洗浄する蒸気洗
浄などがある。The cleaning methods include (1) immersion cleaning in which the substrate is immersed in the solvent, (2) ultrasonic cleaning in which ultrasonic vibrations are added to the solvent, (3) spray cleaning in which the solvent is sprayed onto the substrate with high pressure spray, (4) There is steam cleaning, which involves cleaning with solvent vapor.
ここで、主に洗浄用フロンはフロン113である。フロ
ン113は、安定性、低沸点、樹脂に対して不溶解性、
金属を腐食せず電気絶縁性大、毒性小といった優れた特
性があり、半導体あるいは精密機械業界などハイテク産
業には不可欠の物質であるが、大気に放出されると、大
気圏のオゾン層破壊の要因と考えられ国際環境計画で特
定のフロンは、削減、全廃されることになった。Here, the cleaning fluorocarbon is mainly fluorocarbon 113. Freon 113 has stability, low boiling point, insolubility in resin,
It has excellent properties such as not corroding metals, high electrical insulation, and low toxicity, and is an essential material for high-tech industries such as semiconductors and precision machinery. However, when released into the atmosphere, it can cause the depletion of the atmospheric ozone layer. Given this, certain CFCs have been decided to be reduced or completely abolished under the International Environmental Plan.
一方、トリクロロエチレンは毒性が強く、規制の方向に
あり、また溶剤の溶解能が大であることから樹脂部品へ
の影響が大きい。このような状況から、開発技術として
種々の技術が発表されているが、いずれもフロン洗浄に
勝るものはなく、有効な代替技術の開発が急務となって
いる。On the other hand, trichlorethylene is highly toxic and is subject to regulation, and its ability to dissolve solvents is large, so it has a large impact on resin parts. Under these circumstances, various technologies have been announced as development technologies, but none of them are superior to Freon cleaning, and there is an urgent need to develop effective alternative technologies.
上記従来技術で主に使用されている洗浄用フロン、特に
特定のフロン(フロン11,12゜113など)は全廃
の方向で、使用不可能な状況である。又、洗浄力の優れ
たトリクロロエチレン、四塩化炭素なども規制の対象に
あり、代替技術の開発が急務である。The cleaning fluorocarbons mainly used in the above-mentioned conventional technology, particularly certain fluorocarbons (such as fluorocarbons 11, 12, 113, etc.), are being completely phased out and are no longer usable. Furthermore, trichlorethylene and carbon tetrachloride, which have excellent detergency, are also subject to regulations, and there is an urgent need to develop alternative technologies.
本発明は、上記背景に鑑み、フロン洗浄に代る基板の新
しい洗浄方法及び装置を提供することを目的とする。SUMMARY OF THE INVENTION In view of the above background, an object of the present invention is to provide a new method and apparatus for cleaning a substrate as an alternative to fluorocarbon cleaning.
上記目的を達成するために、本発明では、基板を洗浄す
る方法において、任意の圧力、温度の洗浄容器内の基板
に、該容器圧力より高圧の液化ガスを、圧力差により液
化状態で噴射して、基板を洗浄することを特徴とする基
板の洗浄方法としたものであり、また、上記他の目的を
達成するために、本発明では、基板を洗浄する装置にお
いて、
(a) 洗浄に使用するガスを、任意の圧力、温度条
件の液化ガスに液化する手段と、
(b) 基板を収容し、または保持して可動できる手
段及び該ガスを液化状態に保つ圧力、温度条件に制御す
る手段とを具備した洗浄容器と、(e) 該洗浄容器
より高圧の上記液化ガスを基板に向けて圧力差で噴射す
る手段と、
(d) 前記噴射した液化ガスを収容し、圧力あるい
は温度を変化させてガス化し分離する手段と、
(e) 前記分離したガスを清浄化する手段及び清浄
化したガスを前記液化手段に供給する手段とを備えたこ
とを特徴とする基板の洗浄装置としたものである。In order to achieve the above object, the present invention provides a method for cleaning a substrate, in which liquefied gas at a higher pressure than the container pressure is injected in a liquefied state due to a pressure difference onto a substrate in a cleaning container at an arbitrary pressure and temperature. In order to achieve the above-mentioned other objects, the present invention provides a substrate cleaning method characterized by: (a) used for cleaning; (b) Means for housing or holding the substrate and movable it, and means for controlling the pressure and temperature conditions to maintain the gas in a liquefied state. (e) means for injecting the liquefied gas at a higher pressure from the cleaning container toward the substrate with a pressure difference; and (d) storing the injected liquefied gas and changing the pressure or temperature. (e) means for cleaning the separated gas and means for supplying the purified gas to the liquefaction means. It is.
そして、本発明においては、使用できる液化ガスとして
は炭化水素系のガス又は炭酸ガスがよく、これらの液化
ガス中には、基板の汚染物と液化ガスとに相互に液解性
のある物質、例えば有機溶剤及び酸又はアルカリ等を添
加して用いることもできる。In the present invention, the liquefied gas that can be used is preferably a hydrocarbon-based gas or carbon dioxide gas, and these liquefied gases include substances that are mutually dissolvable between contaminants on the substrate and the liquefied gas. For example, an organic solvent and an acid or alkali may be added.
本発明は、半導体ウェハ、ディスク等の表面に付着した
油脂類などの有機物や微粒子、あるいはプリント基板の
ハンダフラックス残渣などの基板表面の汚染物を洗浄、
除去するため、従来使用していたフロン、トリクロロエ
チレンなどの有機溶剤に代り、液化ガスを使用するもの
である。以下具体的手段について述べる。The present invention cleans organic substances and fine particles such as oils and fats adhering to the surfaces of semiconductor wafers, disks, etc., and contaminants on the substrate surfaces such as solder flux residue on printed circuit boards.
For removal, liquefied gas is used in place of conventionally used organic solvents such as chlorofluorocarbons and trichlorethylene. Specific measures will be described below.
基板を出入れする開閉部を設け、前記基板を支持するス
テージを収容し、かつ、ステージをスライドあるいは回
転させる機構を有した洗浄容器内を前記ガスが液化状態
に保持できる圧力、温度条件にし、ボンベから供給した
例えばプロパンガスを液化器で液化し、これを高圧ポン
プで送液、昇圧して前記洗浄容器内より高い任意の圧力
及び温度条件の液化ガスを圧力差でノズルを介して、前
記洗浄容器内の基板表面に噴射する。基板は支持ステー
ジを任意に移動させ、基板の洗浄面が上記噴射により効
率よく洗浄されるように可動する。providing an opening/closing section for taking in and out the substrate, accommodating a stage that supports the substrate, and setting the pressure and temperature conditions in a cleaning container that has a mechanism for sliding or rotating the stage to maintain the gas in a liquefied state; For example, propane gas supplied from a cylinder is liquefied in a liquefier, and the gas is pumped and pressurized using a high-pressure pump, and the liquefied gas at an arbitrary pressure and temperature condition higher than that in the cleaning container is passed through the nozzle with a pressure difference. Spray onto the substrate surface inside the cleaning container. The substrate is moved by arbitrarily moving the support stage so that the cleaning surface of the substrate is efficiently cleaned by the jetting.
これにより、液化ガスの溶解力と噴射による機械的な力
により効果的に基板表面の付着物を除去して洗浄するよ
うにしたものである。また、液化炭酸ガスの場合、第3
物質、例えば炭化水素系の有機溶剤であるトルエン、ヘ
キサン、ケロシンなどを添加して、溶解力を高めて噴射
すると、洗浄効果が向上する。As a result, deposits on the surface of the substrate can be effectively removed and cleaned using the dissolving power of the liquefied gas and the mechanical force of the jet. In addition, in the case of liquefied carbon dioxide, the third
The cleaning effect can be improved by adding a substance such as hydrocarbon-based organic solvents such as toluene, hexane, kerosene, etc. to increase the dissolving power and spraying.
基板表面の付着物を除去した液化ガスは、保圧弁を通過
して分離槽に導入する。ここで、任意の圧力に減圧し、
液化ガスからガス相へ変化させると、液化ガスに溶解し
ていた溶解物がガス中に析出し、重力で落下し分離槽下
部に分離する。分離した析出物は適宜、分離槽下部より
内圧を利用して抜き出す。The liquefied gas from which deposits on the substrate surface have been removed passes through a pressure-holding valve and is introduced into a separation tank. Here, reduce the pressure to the desired pressure,
When the liquefied gas is changed to the gas phase, dissolved substances dissolved in the liquefied gas are precipitated in the gas, fall by gravity, and are separated at the bottom of the separation tank. The separated precipitate is appropriately extracted from the bottom of the separation tank using internal pressure.
一方のガス中には、析出物あるいは微粒子がミスト、ダ
ストとして飛散同伴されるためフィルターにより濾過し
、清浄化ガスとしてリサイクルする。また、ガス中に、
例えばハンダフラックスに含まれる塩素が塩素イオンと
して同伴される可能性がある。この場合は、フィルター
の前段に塩素を吸着あるいは反応する活性炭あるいはカ
ルシュラム充填塔を設置して、これを通過させることで
除去する。In one gas, precipitates or fine particles are scattered and entrained as mist or dust, so they are filtered through a filter and recycled as clean gas. Also, in the gas
For example, chlorine contained in solder flux may be entrained as chlorine ions. In this case, an activated carbon or calcilum packed tower that adsorbs or reacts with chlorine is installed in front of the filter, and the chlorine is removed by passing through it.
このようにして、基板洗浄が終了すると液化ガスの供給
、噴射を停止し、洗浄容器内を減圧して基板を取出す。In this manner, when the substrate cleaning is completed, the supply and injection of liquefied gas are stopped, the pressure inside the cleaning container is reduced, and the substrate is taken out.
特に、プリント板のハンダフラックスの洗浄の場合には
、溶媒ガスは炭化水素系のガス、例えばプロパン、メタ
ン、エタンなどの液化ガスが効果的である。Particularly in the case of cleaning solder flux from printed circuit boards, hydrocarbon gases such as liquefied gases such as propane, methane, and ethane are effective as the solvent gas.
第6図にプロパンの密度−圧力線図を示す。 Figure 6 shows a density-pressure diagram of propane.
液化ガスを抽出溶剤として使用するには、耐圧の洗浄容
器が必要である。例えば、液化プロパンガスの使用温度
47℃とすれば、15気圧以上の圧力に保持しなければ
ならない。The use of liquefied gas as an extraction solvent requires a pressure-resistant cleaning vessel. For example, if the operating temperature of liquefied propane gas is 47°C, the pressure must be maintained at 15 atmospheres or more.
ここで、プリント板にロジン系ハンダペーストを塗布し
、加熱してハンダフラックス(約40■)が残留する試
験片を作成し、溶解・洗浄テストを行った。その結果を
第7図に示す。Here, a rosin-based solder paste was applied to a printed board and heated to prepare a test piece in which solder flux (approximately 40 cm) remained, and a dissolution/cleaning test was conducted. The results are shown in FIG.
フラックス残渣は、ロジン(松脂)で淡黄色の樹脂フィ
ルム状に残留する。除去率は重量変化より算出した。抽
出溶剤は液化炭酸ガスの他有機溶剤として、トリクロロ
エチレン、エタノール、の結果も示す。The flux residue is rosin and remains in the form of a pale yellow resin film. The removal rate was calculated from the weight change. In addition to liquefied carbon dioxide as the extraction solvent, results are also shown for trichlorethylene and ethanol as organic solvents.
液化ガス以外は、ビーカ中の各溶剤に浸漬し、溶剤をス
タータで緩速攪拌した。液化ガスへのエタノール添加量
は、0.5重量%であるが、基板表面へは噴射していな
い。フラックス残渣はKB値が大きいトリクロロエチレ
ンでは短時間で除去され、液化プロパンもほぼ同等に除
去される。KB値がフロン113と同等のエタノールで
、93%の除去率である。液化炭酸ガス単独では50%
余であるが、エタノール添加液化炭酸ガスでは、エタノ
ールと同等の除去率である。The components other than the liquefied gas were immersed in each solvent in a beaker, and the solvents were slowly stirred with a starter. The amount of ethanol added to the liquefied gas was 0.5% by weight, but it was not injected onto the substrate surface. Flux residue can be removed in a short time with trichlorethylene, which has a large KB value, and liquefied propane can be removed almost equally. Ethanol has a KB value equivalent to that of Freon 113, and has a removal rate of 93%. Liquefied carbon dioxide alone is 50%
On the other hand, ethanol-added liquefied carbon dioxide has the same removal rate as ethanol.
ここで、エタノール、エタノール添加液化炭酸ガスの各
処理済サンプルを、それぞれの溶剤中で振動させると、
容易に残りの残渣を除去できた。超音波を付加しても同
様の結果である。Here, when the treated samples of ethanol and ethanol-added liquefied carbon dioxide are vibrated in their respective solvents,
The remaining residue could be easily removed. Similar results were obtained even when ultrasonic waves were added.
すなわち、本発明は、上記知見に基き、フラックス残渣
は溶解しても、付着物が微少残留するが、液化ガスの噴
射による機械的な力により、容易に除去できることに着
目してなされたものである。That is, the present invention was made based on the above-mentioned knowledge, focusing on the fact that even if the flux residue is dissolved, a small amount of deposit remains, but it can be easily removed by the mechanical force of the injection of liquefied gas. be.
さらに、炭酸ガスの場合、エタノールなどの第3物質の
溶剤の樹脂部品に対する溶解性については、溶剤の割合
が実施例では液化炭酸ガスの0.5重量%と少量であり
、影響が極めて少なく、廃溶剤発生量が低減できる。ま
た、溶剤の添加を停止し、液化炭酸ガスのみを噴射して
残渣除去後の基板表面への付着溶剤を洗浄し、そののち
減圧することで乾燥状態で基板を取出すことが可能であ
る。すなわち、乾燥工程が不要である。Furthermore, in the case of carbon dioxide gas, the solubility of a third substance such as ethanol in the resin parts is extremely small because the proportion of the solvent is as small as 0.5% by weight of the liquefied carbon dioxide gas in the example. The amount of waste solvent generated can be reduced. Further, it is possible to remove the substrate in a dry state by stopping the addition of the solvent, injecting only liquefied carbon dioxide gas to wash away the solvent adhering to the substrate surface after removing the residue, and then reducing the pressure. That is, a drying step is not necessary.
以下、図面を用いて本発明を説明するが、本発明はこれ
らに限定されない。The present invention will be described below with reference to the drawings, but the present invention is not limited thereto.
実施例1
第1図は、本発明の一実施例であるプリント板のハンダ
フラックス残渣の除去、洗浄工程を示す工程図である。Embodiment 1 FIG. 1 is a process diagram showing a process for removing solder flux residue and cleaning a printed board according to an embodiment of the present invention.
装置は液化器1、高圧ポンプ2、温度調整器3及びノズ
ル4と基板2oを収容する洗浄容器5と保圧弁6a、さ
らに分離槽7及びフィルター8から構成されている。操
作はプロパンボンベ11から供給されたプロパンガスを
、フィルター8で濾過する。濾過されたガスを液化器1
で液化し、高圧ポンプ2で送液して昇圧し、温度調整器
3により温度を調整して所定の圧力、温度条件の液化ガ
スとする。The apparatus is composed of a liquefier 1, a high pressure pump 2, a temperature regulator 3, a nozzle 4, a cleaning container 5 that accommodates a substrate 2o, a pressure holding valve 6a, a separation tank 7, and a filter 8. In operation, propane gas supplied from the propane cylinder 11 is filtered through the filter 8. The filtered gas is liquefied
The gas is liquefied by the high-pressure pump 2 to increase the pressure, and the temperature is adjusted by the temperature regulator 3 to obtain a liquefied gas under predetermined pressure and temperature conditions.
この液化ガスを、ノズル4を介して洗浄容器5内の基板
20に噴射して、基板表面を洗浄する。必要に応じて溶
剤タンク10の第3物質を、溶剤ポンプ9より液化ガス
に添加して、液化ガスと溶剤を混合し噴射して、基板表
面の付着物を除去し、ついで溶剤ポンプ9を停止し、液
化ガスのみを噴射して溶剤を除去、洗浄する。This liquefied gas is injected onto the substrate 20 in the cleaning container 5 through the nozzle 4 to clean the substrate surface. If necessary, the third substance in the solvent tank 10 is added to the liquefied gas from the solvent pump 9, the liquefied gas and the solvent are mixed and sprayed to remove deposits on the substrate surface, and then the solvent pump 9 is stopped. The solvent is then removed and cleaned by injecting only liquefied gas.
洗浄容器5内の圧力は、保圧弁6aで保持されているが
、噴射された液化ガスは保圧弁6aを流通し、減圧して
分離槽7に導入する。ここで、保圧弁6aで減圧すると
、ガス膨張により冷却される。そのため、加熱器13で
ガス相になるように加温する。分離槽7で分離した基板
から除去した付着物は分離槽底部に沈降し、適宜内圧を
利用して抜出す。The pressure inside the cleaning container 5 is maintained by a pressure-holding valve 6a, and the injected liquefied gas flows through the pressure-holding valve 6a, is depressurized, and introduced into the separation tank 7. Here, when the pressure is reduced by the pressure holding valve 6a, the gas is expanded and cooled. Therefore, it is heated by the heater 13 so that it becomes a gas phase. The deposits removed from the substrates separated in the separation tank 7 settle to the bottom of the separation tank, and are extracted using internal pressure as appropriate.
一方のガス中には除去した付着物の微粒子が飛散して同
伴されることがあるため、分離槽内のデミスタで除去し
、さらに、フィルター8により濾過して清浄化した後、
前記供給ガスとしてリサイクルする。Since fine particles of the removed deposits may be scattered and entrained in one of the gases, they are removed by a demister in the separation tank, and then filtered and cleaned by the filter 8.
It is recycled as the feed gas.
次に、第2図の洗浄容器5の縦断面、第2図のA−A断
面図を示す第3図、第4図の基板ステージの鳥敞図によ
り洗浄時の動作を説明するまず、洗浄容器のフタ51を
開き、基板2゜を第4図のステージ53に取付け、フタ
51を閉じ簡易締具56でロックし、液化ガスをノズル
4から噴射する。しかし、この状態では、容器内は大気
圧であるため、液化ガスは減圧される状態でガスとなる
。ここで、放出弁57を微開して、容器内空気をガスと
任意の時間内で置換した後放出弁を閉じる。Next, the operation during cleaning will be explained with reference to the longitudinal section of the cleaning container 5 in FIG. 2, and the bird's-eye view of the substrate stage in FIGS. The lid 51 of the container is opened, the substrate 2° is attached to the stage 53 in FIG. However, in this state, since the inside of the container is at atmospheric pressure, the liquefied gas becomes a gas under reduced pressure. Here, the release valve 57 is opened slightly to replace the air in the container with gas within an arbitrary period of time, and then the release valve is closed.
容器内に、所定の圧力、温度の液化ガスが噴射されるよ
うになり、基板に噴射して洗浄がなされる。必要に応じ
て、ステージ53をラック54により複数回移動させ、
基板表面全体を洗浄する。Liquefied gas at a predetermined pressure and temperature is injected into the container, and is injected onto the substrate to clean it. If necessary, the stage 53 is moved multiple times by the rack 54,
Clean the entire substrate surface.
尚、噴射ノズルは、プリント板と部品との隙間が小さい
場合など角度をつけて噴射すると効果的に洗浄できる。Note that cleaning can be effectively achieved by spraying from the spray nozzle at an angle, such as when the gap between the printed board and the component is small.
以上の本実施例によれば、基板を洗浄し、乾燥状態で取
出すことができるので、乾燥工程が不要である。又、洗
浄容器を複数個設置し、バルブの切換えにより連続処理
を行うことも可能である。According to this embodiment, the substrate can be cleaned and taken out in a dry state, so a drying step is not necessary. It is also possible to install a plurality of cleaning containers and perform continuous processing by switching valves.
第5図は、磁気ディスクを用いた一実施例である洗浄容
器の断面図を示す。それぞれの記号は、第1図と同じで
ある。FIG. 5 shows a cross-sectional view of a cleaning container that is an example of using a magnetic disk. Each symbol is the same as in FIG.
本発明は、従来技術のフロンや特殊有機溶剤が使用規制
され、廃止されたのに代り、基板表面を効果的に洗浄で
きる技術であり、以下の効果がある。The present invention is a technology that can effectively clean the surface of a substrate in place of the conventional fluorocarbons and special organic solvents whose use has been regulated and abolished, and has the following effects.
1)溶剤に液化ガスを使用するため、リサイクルして使
用でき放出量が少ない。1) Since liquefied gas is used as the solvent, it can be recycled and used, and the amount of emissions is small.
2)液化ガスに添加する第3物質が少量であるため、そ
の処理が容易である。2) Since the amount of the third substance added to the liquefied gas is small, its processing is easy.
3) ガスは清浄化してリサイクルするため、基板洗浄
時はつねに新溶剤となっており、溶解度の低下がなく、
効果的に洗浄できる。3) Since the gas is purified and recycled, a new solvent is always used when cleaning the substrate, so there is no decrease in solubility, and
Can be cleaned effectively.
4)基板の洗浄時は液化ガスで湿式であるがガス化する
ため、乾燥状態で基板を取出せる。4) When cleaning the substrate, it is a wet method using liquefied gas, but since it is gasified, the substrate can be taken out in a dry state.
このため乾燥工程が不要である。Therefore, a drying step is not necessary.
第1図は本発明の一実施例を示す処理工程図、第2図は
洗浄容器の縦断面図、第3図は第2図のA−A断面図、
第4図は基板ステージの鳥敞図、第5図は他の実施例で
磁気ディスク用洗浄容器の断面図、第6図はプロパンの
密度−圧力線図、第7図は洗浄、溶解テスト結果を示す
グラフである。
1・ ・液化器、2・ ・高圧ポンプ、3・温度調整器
、4・・・ノズル、5・・・洗浄容器、6a、6b・
・保圧弁、7・ ・分離槽1,8・・・フィルター 9
・溶剤ポンプ、10・・・溶剤タンク、11 ・
ガスボンベ、20・・・基板
第1図FIG. 1 is a processing process diagram showing an embodiment of the present invention, FIG. 2 is a longitudinal sectional view of a cleaning container, and FIG. 3 is a sectional view taken along line A-A in FIG. 2.
Fig. 4 is a bird's-eye view of the substrate stage, Fig. 5 is a cross-sectional view of a magnetic disk cleaning container in another embodiment, Fig. 6 is a propane density-pressure diagram, and Fig. 7 is the cleaning and dissolution test results. This is a graph showing. 1. Liquefier, 2. High pressure pump, 3. Temperature regulator, 4. Nozzle, 5. Washing container, 6a, 6b.
・Pressure valve, 7・ ・Separation tank 1, 8...filter 9
・Solvent pump, 10...Solvent tank, 11 ・
Gas cylinder, 20... Board figure 1
Claims (8)
洗浄容器内の基板に、該容器圧力より高圧の液化ガスを
、圧力差により液化状態で噴射して、基板を洗浄するこ
とを特徴とする基板の洗浄方法。1. A method for cleaning a substrate, characterized in that the substrate is cleaned by injecting liquefied gas at a higher pressure than the container pressure onto the substrate in a liquefied state due to a pressure difference onto the substrate in a cleaning container at an arbitrary pressure and temperature. cleaning method.
気ディスク、光ディスクであることを特徴とする請求項
1記載の基板の洗浄方法。2. 2. The method of cleaning a substrate according to claim 1, wherein the substrate is a printed circuit board, a semiconductor wafer, a magnetic disk, or an optical disk.
ることを特徴とする請求項1記載の基板の洗浄方法。3. 2. The substrate cleaning method according to claim 1, wherein the liquefied gas is a hydrocarbon gas or carbon dioxide gas.
に溶解性のある第3物質を含有することを特徴とする請
求項1記載の基板の洗浄方法。4. 2. The method of cleaning a substrate according to claim 1, wherein the liquefied gas contains a third substance that is mutually soluble in contaminants on the substrate and the liquefied gas.
れかであることを特徴とする請求項4記載の基板の洗浄
方法。5. 5. The method of cleaning a substrate according to claim 4, wherein the third substance is an organic solvent, an acid, or an alkali.
液化ガスに液化する手段と、 (b)基板を収容し、または保持して可動できる手段及
び該ガスを液化状態に保つ圧力、 温度条件に制御する手段とを具備した洗浄 容器と、 (c)該洗浄容器より高圧の上記液化ガスを基板に向け
て圧力差で噴射する手段と、 (d)前記噴射した液化ガスを収容し、圧力あるいは温
度を変化させてガス化し分離する 手段と、 (e)前記分離したガスを清浄化する手段及び清浄化し
たガスを前記(a)の液化手段に供給する手段とを備え
たことを特徴とする基板 の洗浄装置。6. In an apparatus for cleaning a substrate, (a) a means for liquefying the gas used for cleaning into liquefied gas under arbitrary pressure and temperature conditions; (b) a means for accommodating or holding the substrate and moving the gas; (c) means for injecting the liquefied gas at a higher pressure from the cleaning container toward the substrate with a pressure difference; (d) the A means for storing the injected liquefied gas and gasifying and separating it by changing the pressure or temperature; (e) a means for cleaning the separated gas and supplying the purified gas to the liquefaction means of (a) above; A substrate cleaning device comprising: means.
酸ガスであることを特徴とする請求項6記載の基板の洗
浄装置。7. 7. The substrate cleaning apparatus according to claim 6, wherein the gas used for said cleaning is a hydrocarbon gas or a carbon dioxide gas.
に溶解性のある第3物質を含有することを特徴とする請
求項6記載の基板の洗浄装置。8. 7. The substrate cleaning apparatus according to claim 6, wherein the liquefied gas contains a third substance that is mutually soluble in contaminants on the substrate and the liquefied gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9618090A JPH03295236A (en) | 1990-04-13 | 1990-04-13 | Substrate cleaning method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9618090A JPH03295236A (en) | 1990-04-13 | 1990-04-13 | Substrate cleaning method and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03295236A true JPH03295236A (en) | 1991-12-26 |
Family
ID=14158123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9618090A Pending JPH03295236A (en) | 1990-04-13 | 1990-04-13 | Substrate cleaning method and device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03295236A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995015006A1 (en) * | 1993-11-22 | 1995-06-01 | Tadahiro Ohmi | Washing apparatus, semiconductor production apparatus and semiconductor production line |
| JPH07201785A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Method and apparatus for wet treatment |
| US5555902A (en) * | 1993-04-26 | 1996-09-17 | Sematech, Inc. | Submicron particle removal using liquid nitrogen |
| JPH08257997A (en) * | 1995-03-28 | 1996-10-08 | Agency Of Ind Science & Technol | Method for treating material with hydro-jet |
| JP2007004919A (en) * | 2005-06-24 | 2007-01-11 | Toshiba Corp | Patterned medium manufacturing method and manufacturing apparatus |
| JP2007035662A (en) * | 2005-07-22 | 2007-02-08 | Honda Electronic Co Ltd | Fine atomized particle ultrasonic cleaning equipment |
| JP2010201602A (en) * | 2009-03-06 | 2010-09-16 | Tkx Corp | Fixed abrasive grain type wire saw, and manufacturing method therefor |
| TWI551727B (en) * | 2015-03-20 | 2016-10-01 | 漢翔航空工業股份有限公司 | Method for spraying an anti-wear coating on a super alloy surface by using propane as fuel gas and the system thereof |
-
1990
- 1990-04-13 JP JP9618090A patent/JPH03295236A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5555902A (en) * | 1993-04-26 | 1996-09-17 | Sematech, Inc. | Submicron particle removal using liquid nitrogen |
| WO1995015006A1 (en) * | 1993-11-22 | 1995-06-01 | Tadahiro Ohmi | Washing apparatus, semiconductor production apparatus and semiconductor production line |
| JPH07201785A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Method and apparatus for wet treatment |
| JPH08257997A (en) * | 1995-03-28 | 1996-10-08 | Agency Of Ind Science & Technol | Method for treating material with hydro-jet |
| JP2007004919A (en) * | 2005-06-24 | 2007-01-11 | Toshiba Corp | Patterned medium manufacturing method and manufacturing apparatus |
| JP2007035662A (en) * | 2005-07-22 | 2007-02-08 | Honda Electronic Co Ltd | Fine atomized particle ultrasonic cleaning equipment |
| JP2010201602A (en) * | 2009-03-06 | 2010-09-16 | Tkx Corp | Fixed abrasive grain type wire saw, and manufacturing method therefor |
| TWI551727B (en) * | 2015-03-20 | 2016-10-01 | 漢翔航空工業股份有限公司 | Method for spraying an anti-wear coating on a super alloy surface by using propane as fuel gas and the system thereof |
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