JPH0330208B2 - - Google Patents
Info
- Publication number
- JPH0330208B2 JPH0330208B2 JP62188942A JP18894287A JPH0330208B2 JP H0330208 B2 JPH0330208 B2 JP H0330208B2 JP 62188942 A JP62188942 A JP 62188942A JP 18894287 A JP18894287 A JP 18894287A JP H0330208 B2 JPH0330208 B2 JP H0330208B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- glass
- less
- coating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、無孔化、無歪表面層を有し、良好な
る表面粗度を有する記録デイスク用、特に磁気デ
イスク用基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a substrate for recording disks, particularly for magnetic disks, which has a non-porous, non-strained surface layer and has good surface roughness.
[従来の技術及び解決すべき問題点]
一般に磁気記録デイスク用基板としては、次の
様な特性が要求される。[Prior Art and Problems to be Solved] In general, substrates for magnetic recording disks are required to have the following characteristics.
(1) 0.3μm以下の低ヘツド浮上高さに伴い磁気ヘ
ツドの安定な浮上と記録特性の安定性を得るた
め研摩後の表面粗度が良好なこと。(1) Good surface roughness after polishing to ensure stable flying of the magnetic head and stability of recording characteristics due to the low head flying height of 0.3 μm or less.
(2) 基板表面に形成される磁性薄膜の欠陥の要因
となる突起や孔状へこみがないこと。(2) There are no protrusions or hole-like depressions that can cause defects in the magnetic thin film formed on the substrate surface.
(3) 機械加工、研摩、或いは使用時の高速・回転
に十分耐える機械的強度を有すること。(3) Must have sufficient mechanical strength to withstand machining, polishing, or high-speed rotation during use.
(4) 耐食性、耐候性、且つ耐熱性を有すること。(4) It must have corrosion resistance, weather resistance, and heat resistance.
従来磁気デイスク用基板にはAl合金が使用さ
れているが、Al合金基板では材料の結晶異方性、
材料欠陥及び材料中に存在する非金属介在物等の
ため機械加工や研摩工程において、これらが基板
表面に突起として残存したり或いは、脱落して凹
みを生じ十分な研摩を行なつても表面粗度は、せ
いぜい200Å程度であり、突起や凹み、うねりの
ある表面状態で高密度磁気記録用デイスク用基板
材としては十分でない。 Conventionally, Al alloys have been used for magnetic disk substrates, but Al alloy substrates suffer from the crystal anisotropy of the material,
Due to material defects and non-metallic inclusions present in the material, during machining and polishing processes, these may remain as protrusions on the substrate surface or fall off and create dents, resulting in surface roughness even after sufficient polishing. The thickness is about 200 Å at most, and the surface has protrusions, depressions, and undulations, which is not sufficient as a substrate material for high-density magnetic recording disks.
磁気デイスク基板の加工の良否が、そのまま、
磁気デイスクのランアウト、加速度成分、媒体の
信号エラー等に影響する。 The quality of the processing of the magnetic disk substrate is directly affected.
Affects magnetic disk runout, acceleration components, media signal errors, etc.
ところで、Al合金の場合はメタル材の為、ビ
ツカース硬度も100程度(セラミツクの場合600以
上)であり、曲げ強度も1000Kg/cm2(セラミツク
の場合4000Kg/cm2以上)であつて、高密度記録に
なるに従つてスクラツチ、キス、平坦度、うねり
などの形状精度もきびしくなつてきており、加工
は一層困難となつてきている。砥粒加工の際も砥
粒がうめ込まれやすく、欠陥となる。また、Al
合金基板の場合、表面の耐食性、耐候性、汚染を
防ぐ上で旋削工程、ポリツシング工程、保管の
際、清浄度、防錆、汚れ等で製造工程上充分な配
慮が必要となつている。 By the way, since Al alloy is a metal material, its Vickers hardness is around 100 (over 600 for ceramics), the bending strength is 1000Kg/cm 2 (over 4000Kg/cm 2 for ceramics), and it has a high density. As more records are made, the precision of shapes such as scratches, kisses, flatness, and undulations becomes more and more strict, making processing even more difficult. During abrasive processing, the abrasive grains tend to become embedded, resulting in defects. Also, Al
In the case of alloy substrates, sufficient consideration must be given to cleanliness, rust prevention, dirt, etc. in the manufacturing process during the turning process, polishing process, and storage to ensure surface corrosion resistance, weather resistance, and prevention of contamination.
Al合金基板の改善のためその表面に硬度の高
い膜を形成することも知られている。一例とし
て、Al合金表面にアルマイト層を形成し硬度を
増加して研摩加工性を向上するための方法がとら
れるが、アルマイト形成中にAl合金中の微量不
純物(Fe、Mn、Si)が金属間加工物として析出
するため、アルマイト処理後その部分が凹みの欠
陥の発生要因となつている。母材合金の高純度化
を図ることは製造プロセス上至難に近く、さらに
Al合金の場合耐食性、清浄度の面でも取りあつ
かいが問題となつている。またAl合金表面への
スパツタリングやメツキによる薄膜媒体形成の場
合、Al合金と磁性膜の化学反応や拡散の問題が
生じ、さらに工程により磁性膜に熱処理を加える
必要があるが、Al合金基板は変形し易く、形状
精度が悪くなると共に面振れ、加速度が上昇する
ため、熱処理を行うことは困難である。 It is also known to form a highly hard film on the surface of Al alloy substrates in order to improve them. For example, a method is used to form an alumite layer on the surface of an Al alloy to increase hardness and improve polishability, but during the alumite formation, trace impurities (Fe, Mn, Si) in the Al alloy are Since it precipitates as a workpiece, that part becomes a cause of dent defects after alumite treatment. Increasing the purity of the base alloy is nearly impossible in terms of the manufacturing process, and
In the case of Al alloys, handling has become a problem in terms of corrosion resistance and cleanliness. In addition, when forming a thin film medium by sputtering or plating on the Al alloy surface, problems arise such as chemical reaction and diffusion between the Al alloy and the magnetic film, and it is also necessary to heat-treat the magnetic film during the process, but the Al alloy substrate deforms. It is difficult to perform heat treatment because the shape accuracy deteriorates and surface runout and acceleration increase.
なお、Al基板上にSiO2、Al2O3等の酸化物をス
パツタリングにより形成する方法もあるが、Al
基板とスパツタ形成後の密着力が弱いという欠点
がある。 There is also a method of forming oxides such as SiO 2 and Al 2 O 3 on an Al substrate by sputtering, but
The drawback is that the adhesion to the substrate after spatter formation is weak.
これらのAl合金系デイスク基板に対し、今日
アルミナ系セラミツク材料が、Al合金材料に比
べ、耐熱性、耐摩耗性、耐候性、絶縁性、及び機
械的強度のすぐれていることにより各種分野に広
範囲の用途に使用されるようになつたが、基板表
面に媒体処理の施される磁気デイスク用基板では
媒体の薄膜化、高密度化に伴つて、基板表面の無
孔化、無歪基板の必要性に迫られている。 In contrast to these Al alloy disk substrates, alumina ceramic materials are now widely used in various fields due to their superior heat resistance, wear resistance, weather resistance, insulation properties, and mechanical strength compared to Al alloy materials. However, with the thinner film and higher density of the media in magnetic disk substrates where the surface of the substrate is treated with media, the need for a non-porous substrate surface and a non-distortion substrate has increased. Being forced into sex.
一般にセラミツク基板の製造方法としては単結
晶法や、金型成形、ラバープレス、ドクターブレ
ード法等により成形の後焼結する方法、さらに高
密度化の為、ホツトプレス法(HP)、熱間静水
圧プレス法(HIP法)があるが、前者の単結晶化
法では製造コストが高い上に大口径基板の製造は
困難であり、又、HIP法やHP法により、高密度
化された基板にあつても5μm以下の微細孔が基板
に存在するため磁気デイスク用基板に使用する場
合は表面微細欠陥によるドロツプアウトの発生
や、ヘツドクラツシユ等信頼性を損う問題があつ
た。 In general, ceramic substrates are manufactured using the single crystal method, molding and sintering methods such as mold molding, rubber pressing, and doctor blade methods.In addition, for higher density, hot pressing (HP), hot isostatic pressing, etc. There is a pressing method (HIP method), but the former single crystallization method has high manufacturing costs and is difficult to manufacture large diameter substrates, and HIP and HP methods are difficult to manufacture with high density substrates. However, since micropores of 5 μm or less are present in the substrate, when used in magnetic disk substrates, problems such as dropouts due to surface microdefects and head crushing occur, which impair reliability.
また一般にデイスク基板等に適用しうる表面研
摩法としては、メカノケミカル研摩法は、Si基
板、GGG結晶、フエライト等の表面物性を劣化
させずに仕上げる方法として公知であるが、メカ
ノケミカル研摩法を微細孔の存在するセラミツク
ス材に適用する場合は、微細孔がセラミツク表面
に露出した状態となり、薄膜媒体を有するデイス
ク用基板としては不十分であり、又アルミナ系セ
ラミツク材にメカノケミカル研摩法を適用すると
各材質或いは結晶面での化学侵食の速度が異なる
ため、微細孔の露出と同時に結晶段差を生ずる虞
れがあつた。 In general, as a surface polishing method that can be applied to disk substrates, etc., mechanochemical polishing is known as a method for finishing materials such as Si substrates, GGG crystals, ferrite, etc. without degrading their surface properties. When applied to ceramic materials with micropores, the micropores are exposed on the ceramic surface, making it unsatisfactory as a disk substrate with a thin film medium.Also, mechanochemical polishing is applied to alumina-based ceramic materials. Then, since the speed of chemical erosion differs for each material or crystal plane, there is a risk that a crystal step may occur at the same time as the micropores are exposed.
[解決すべき課題]
本発明は、上述の如き従来法の欠点を改良した
セラミツク材料を基材とする磁気デイスク用基板
を提供することを目的とする。[Problems to be Solved] An object of the present invention is to provide a substrate for a magnetic disk using a ceramic material as a base material, which improves the drawbacks of the conventional method as described above.
[本発明の解決手段及び作用効果]
本発明はアルミナ系セラミツク基板表面上に形
成する被着磁性膜の特性向上、信頼性を保護する
ために表面粗度を80Å以下、好ましくは50Å以
下、更には20Å以下までの無孔化、且つ、無歪層
に仕上げた基板を基本的特徴とする。[Solution Means and Effects of the Present Invention] The present invention provides a surface roughness of 80 Å or less, preferably 50 Å or less, and The basic feature is a substrate with no pores down to 20 Å or less and a strain-free layer.
即ち本発明の磁気デイスク用基板は、5μm以下
の微細孔を有する相対理論密度96%以上のアルミ
ナ系セラミツク材料表面上に、表面粗度80Å以
下、且つ無孔化無歪表面の膜厚0.3μm〜200μm、
前記セラミツク基板との熱膨張係数の相対差が20
℃〜ガラス歪点において10-6/deg.以下のガラス
コーテイング膜を有することを特徴とする。 That is, the magnetic disk substrate of the present invention has a surface roughness of 80 Å or less and a film thickness of 0.3 μm with a pore-free, strain-free surface on the surface of an alumina-based ceramic material having micropores of 5 μm or less and a relative theoretical density of 96% or more. ~200μm,
The relative difference in thermal expansion coefficient with the ceramic substrate is 20
It is characterized by having a glass coating film of 10 -6 /deg. or less at a glass strain point of 10 -6 /deg.
歪点とはガラスの粘度約1014.5ポイズに相当す
る温度を言う。 The strain point is the temperature corresponding to the viscosity of glass, approximately 10 to 14.5 poise.
本発明で無歪表面とは表面加工流動層
(Beilby layer)厚さ50Å以下(エリプソメータ
で測定)をいい、好ましくは20Å以下を言う。ま
た、無孔化とは表面に0.2μmをこえる孔が存在し
ないことをいい、好ましくは0.1μmをこえる孔が
存在しないことをいう。 In the present invention, a strain-free surface refers to a surface-treated fluidized bed (Beilby layer) having a thickness of 50 Å or less (measured with an ellipsometer), preferably 20 Å or less. In addition, "non-porous" means that there are no pores larger than 0.2 μm on the surface, preferably no pores larger than 0.1 μm.
本発明のコーテイング膜に用いるガラスにはソ
ーダ石灰ガラス(Na2O−CaO−SiO2系)、鉛ガ
ラス(K2O−PbO−SiO2系)、ホウケイ酸ガラス
(Na2O−B2O3−SiO2系)、アルミナケイ酸ガラス
(CaO−MgO−Al2O3−SiO2系)等のケイ酸塩系
ガラスが用いられるが、その軟化点は組成により
様々であり、薄膜媒体形成の時、被着磁性膜に
200℃以上の熱処理を行なう必要がある場合には
軟化点の高いガラスを適宜使用すればよく、また
熱処理温度が低い場合にはどのようなガラスを使
用してもよい。さらにガラスと基材との熱膨張係
数の差が大きいとそれらの相互間応力が増し、反
りや破壊等の問題が生じるため、ガラスとセラミ
ツク基材の熱膨張係数の相対差が1×10-6/deg.
以下であることを必要とする。又ガラスコーテイ
ング膜表面に圧縮応力がかかる方が良いため、ガ
ラスの熱膨張係数が基材の熱膨張係数よりも小で
あるのが好ましい。なお熱膨張係数の相対差はで
きるだけ小さく、かつ基材およびガラスの20℃〜
歪点における熱膨張係数の温度変化は同一傾向を
有するのが最も好ましい。 The glasses used for the coating film of the present invention include soda lime glass (Na 2 O-CaO-SiO 2 system), lead glass (K 2 O-PbO-SiO 2 system), and borosilicate glass (Na 2 O-B 2 O Silicate - based glasses such as alumina-silicate glass (CaO-MgO-Al 2 O 3 -SiO 2- based) are used, but their softening points vary depending on the composition, making it difficult to form thin film media. When the magnetized film
If it is necessary to perform heat treatment at 200° C. or higher, a glass with a high softening point may be used as appropriate, and if the heat treatment temperature is low, any glass may be used. Furthermore, if the difference in the coefficient of thermal expansion between glass and the base material is large, the stress between them will increase, causing problems such as warping and destruction. Therefore, the relative difference in the coefficient of thermal expansion between glass and ceramic base material is 1 6 /deg.
The following must be true. Further, since it is better to apply compressive stress to the surface of the glass coating film, it is preferable that the coefficient of thermal expansion of the glass is smaller than that of the base material. The relative difference in thermal expansion coefficients should be as small as possible, and the temperature between the base material and glass should be between 20°C and
Most preferably, the temperature change in the coefficient of thermal expansion at the strain point has the same tendency.
又本発明のガラスによるアルミナ系基板のコー
テイング膜はグレージング法、スパツタ法、蒸着
法、イオンプレーテイング法、金属のアルコキシ
ド溶液等による化学合成法等によつて形成するこ
とができる。コーテイング膜の形成に当つては、
基板とガラスとの接着密度及びヌレ性を改善する
ためにSiO2膜を形成してから行なうとより効果
的である。 The coating film of the glass alumina substrate of the present invention can be formed by a glazing method, a sputtering method, a vapor deposition method, an ion plating method, a chemical synthesis method using a metal alkoxide solution, or the like. When forming the coating film,
It is more effective to perform this after forming a SiO 2 film in order to improve the adhesion density and wettability between the substrate and glass.
[好適な実施の態様]
発明者は種々検討の結果、5μm以下(好ましく
は3μm)の微細孔を表面に有する相対理論密度96
%以上のアルミナ系セラミツク材表面に上部被膜
との絶縁性を保持する上で、0.5μm〜220μm厚の
上記基板との熱膨張係数(20℃〜歪点)の相対差
が10-6/deg.以下であるガラスのコーテイング膜
を形成後、前記薄膜表面を粒径0.1μm以下、純度
99%以上のSiO2、MgO、CeO2、Al2O3又は
Fe2O3微粉の少なくとも1種を0.1〜20wt%純水
中に懸濁した懸濁液で0.05〜2Kg/cm2の荷重にて
研摩加工することにより膜厚0.3μm〜200μm、表
面粗度80Å以下(好ましくは50Å以下、さらに20
Å以下まで)且つ無孔化、無歪の表面層が得られ
前記基板表面上に形成される被着磁性膜の特性向
上・信頼性の保障が得られることを知見した。[Preferred Embodiment] As a result of various studies, the inventors found that the relative theoretical density 96 has micropores of 5 μm or less (preferably 3 μm) on the surface.
In order to maintain insulation with the upper coating on the surface of the alumina ceramic material, the relative difference in thermal expansion coefficient (from 20℃ to strain point) with the above substrate with a thickness of 0.5μm to 220μm is 10 -6 /deg. After forming a glass coating film with the following properties, the surface of the thin film is coated with a particle size of 0.1 μm or less and purity.
99% or more of SiO 2 , MgO, CeO 2 , Al 2 O 3 or
A suspension of at least one Fe 2 O 3 fine powder of 0.1 to 20 wt% in pure water is polished at a load of 0.05 to 2 Kg/cm 2 to achieve a film thickness of 0.3 μm to 200 μm and a surface roughness. 80 Å or less (preferably 50 Å or less, preferably 20 Å or less)
It has been found that a porosity-free and strain-free surface layer can be obtained, and the characteristics and reliability of the magnetized film formed on the substrate surface can be improved and the reliability guaranteed.
本発明のアルミナ系セラミツク材としては
Al2O3、Al2O3−TiC−TiO2系、Al2O3−TiO2系、
Al2O3−Fe2O3−TiC系等、Al2O3を主成分とする
アルミナ系セラミツク材であつて、金型成形、ラ
バープレス、ドクターブレード法等により形成さ
れ、さらに熱間成形法(HP法)、熱間静水圧プ
レス法(HIP法)にて焼結処理して得られるもの
が好ましい。なおこれらのアルミナ系セラミツク
材は、MgO、NiO、Cr2O3等の公知の粒成長抑制
剤、その他の焼結助剤を含むことができ、アルミ
ナ平均結晶粒径は5μm以下のものが好ましい。な
おこのようなアルミナ系セラミツク基材は市販の
密度96%以上の一般品規格のものとして入手でき
る。 The alumina ceramic material of the present invention is
Al 2 O 3 , Al 2 O 3 −TiC−TiO 2 system, Al 2 O 3 −TiO 2 system,
It is an alumina ceramic material mainly composed of Al 2 O 3 , such as Al 2 O 3 −Fe 2 O 3 −TiC system, and is formed by die molding, rubber press, doctor blade method, etc., and is further hot formed. Those obtained by sintering using a hot isostatic pressing method (HP method) or a hot isostatic pressing method (HIP method) are preferable. These alumina-based ceramic materials can contain known grain growth inhibitors such as MgO, NiO, Cr2O3 , and other sintering aids, and the average alumina grain size is preferably 5 μm or less. . Incidentally, such alumina-based ceramic base material is available as a commercially available standard product having a density of 96% or more.
本発明のアルミナ系セラミツク基板において表
面の微細孔が5μm以上であると前記微細孔部にコ
ーテイング膜を形成する時に気泡が発生又は残留
し、膜形成時の精度を悪くするため微細孔は5μm
以下、好ましくは3μm以下にする必要がある。又
本発明におけるアルミナ系セラミツク基板上のガ
ラスコーテイング被膜の厚さは夫々の用途により
選択されるが、コーテイング法としてグレージン
グ法を用いた場合は被膜厚さ10μm未満ではコー
テイングの厚みを一定に保つことが困難であり、
且つ被膜表面のメカノケミカル研摩法(MCP法)
により所要の表面粗度及び無孔化、無歪化ができ
ず、又220μmをこえると基材との膨張係数の差よ
り生じる応力により基材内に大きな歪みを発生す
る虞れがあるので膜形成時の膜厚は10μm〜
220μmにする必要がある。又コーテイング法とし
てスパツタ法を用いた場合は被膜厚さ0.5μm未満
ではコーテイングの厚みを一定に保つことが困難
であり、且つ被膜表面のメカノケミカル研摩法
(MCP法)により所要の表面粗度及び無孔化、無
歪化ができず、又220μmをこえると基板との膨張
係数の差より生じる応力により基材内に大きな歪
みを発生する虞れがあるので膜形成時の膜厚は
0.5μm〜220μmにする必要があり、膜形成速度の
点より好ましくは15μm〜25μmである。研摩後の
コーテイング膜の厚さは、同様な理由及び研摩精
度を考慮してグレージング法を用いた場合は3〜
200μm、スパツタ法を用いた場合は0.3〜200μm、
好ましくは10〜20μmとされる。 If the micropores on the surface of the alumina ceramic substrate of the present invention are 5 μm or more, air bubbles will be generated or remain when forming the coating film in the micropores, impairing the accuracy during film formation.
The thickness should preferably be 3 μm or less. In addition, the thickness of the glass coating film on the alumina ceramic substrate in the present invention is selected depending on each application, but when a glazing method is used as the coating method, the coating thickness should be kept constant if the film thickness is less than 10 μm. is difficult,
And mechanochemical polishing method (MCP method) of the coating surface
Therefore, it is not possible to achieve the required surface roughness, porosity, and distortion, and if the thickness exceeds 220 μm, there is a risk that large distortions may occur in the base material due to stress caused by the difference in expansion coefficient with the base material. Film thickness at the time of formation is 10 μm ~
It needs to be 220μm. Furthermore, when sputtering is used as a coating method, it is difficult to maintain a constant coating thickness if the coating thickness is less than 0.5 μm, and the required surface roughness and It is not possible to make the film non-porous and distortion-free, and if the thickness exceeds 220 μm, there is a risk of large distortion occurring within the base material due to stress caused by the difference in expansion coefficient with the substrate, so the film thickness at the time of film formation is
The thickness needs to be 0.5 μm to 220 μm, and preferably 15 μm to 25 μm from the viewpoint of film formation speed. The thickness of the coating film after polishing is 3 to 3 when using the glazing method, considering the same reason and polishing accuracy.
200μm, 0.3-200μm when using sputtering method,
Preferably it is 10 to 20 μm.
又、本発明におけるMCP法の条件として純水
中に懸濁するSiO2、MgO、CeO2又はAl2O3微粉
の粒径は0.1μmをこえると被研摩コーテイング膜
表面に庇が発生し、表面粗度を劣化するので好ま
しくない。又、純水中への前記微粉の含有量は
0.1wt%未満では研摩効果が少なく、又20wt%を
こえると各微粉による水和熱が発生し易く、或い
はゲル化し易く、かつ、活性が大となつて表面状
態が劣化するので0.1〜20wt%とする。この純水
とは、金属イオン、無機物、汚濁物、特に有機汚
濁物や浮遊物を含まない水でイオン交換水、蒸溜
水等でよい。 Furthermore, as a condition for the MCP method in the present invention, if the particle size of SiO 2 , MgO, CeO 2 or Al 2 O 3 fine powder suspended in pure water exceeds 0.1 μm, eaves will occur on the surface of the coating film to be polished. This is not preferable because it deteriorates the surface roughness. Also, the content of the fine powder in pure water is
If it is less than 0.1wt%, the polishing effect will be small, and if it exceeds 20wt%, the heat of hydration due to each fine powder will easily be generated or gelatinized, and the activity will increase and the surface condition will deteriorate, so 0.1 to 20wt%. shall be. This pure water is water that does not contain metal ions, inorganic substances, or pollutants, especially organic pollutants or suspended matter, and may be ion-exchanged water, distilled water, or the like.
ラツプ盤としては、Snハンダ合金、Pb等の軟
質金属、或いは硬質クロス等が最適である。ラツ
プ荷重は、0.05Kg/cm2未満では所要の表面粗度が
得られず、且つ加工能率が低く又、2Kg/cm2をこ
えると、加工能率の点では好ましい研摩精度が劣
化するので好ましくない。 As a lap board, Sn solder alloy, soft metal such as Pb, or hard cloth is most suitable. If the lap load is less than 0.05Kg/ cm2 , the required surface roughness cannot be obtained and the machining efficiency is low, and if it exceeds 2Kg/ cm2 , the polishing accuracy, which is preferable in terms of machining efficiency, will deteriorate, so it is not preferable. .
なお、本発明の基板を両面記録用磁気デイスク
に用いる場合は、アルミナ系セラミツク基板両面
に、ガラスコーテイング膜を形成し、両面同時に
MCPすることにより両面の薄膜中の内部応力は、
相殺され、平坦度のすぐれ、且つ表面粗度及び無
孔化、無歪のすぐれた基板が得られる。 In addition, when the substrate of the present invention is used for a double-sided recording magnetic disk, a glass coating film is formed on both sides of the alumina ceramic substrate, and both sides are coated simultaneously.
The internal stress in the thin film on both sides is reduced by MCP.
As a result, a substrate with excellent flatness, surface roughness, no pores, and no distortion can be obtained.
本発明のガラスコーテイング膜形成アルミナ系
セラミツク基板の場合は、Al合金に比べ機械的
強度も強く、砥粒加工での形状精度の管理も比較
的容易となる。さらに、耐食性、耐候性に、特別
配慮する必要もなく、表面の汚染も、絶縁薄膜を
さらにスパツタリングにより形成する際、スパツ
タクリーニングにより表面の清浄化が可能であ
る。 In the case of the glass coating film-formed alumina-based ceramic substrate of the present invention, the mechanical strength is stronger than that of Al alloy, and the control of shape accuracy during abrasive processing is relatively easy. Further, there is no need to pay special attention to corrosion resistance and weather resistance, and the surface can be cleaned by sputter cleaning when an insulating thin film is further formed by sputtering.
また、Al合金を旋削加工した際、表面には加
工変質層が残留しているのに対して本発明のアル
ミナ系セラミツク基板の場合は、メカノケミカル
ポリツシユ仕上げにより表面とバルクとの応力歪
の差異は生じず、基板にコーテイングされる媒体
への歪の転写は生じない。 Furthermore, when turning an Al alloy, a process-affected layer remains on the surface, whereas in the case of the alumina-based ceramic substrate of the present invention, the stress strain between the surface and the bulk is reduced by mechanochemical polishing. There is no difference and no strain transfer to the media that is coated onto the substrate.
即ち、本発明による基板のコーテイング膜はガ
ラスであるため、結晶状態はアモルフアスの均一
構造となつている。さらに本発明における研摩加
工方法により表面加工歪も生じないようにするこ
とも可能となつた。 That is, since the coating film of the substrate according to the present invention is made of glass, the crystalline state is an amorphous uniform structure. Furthermore, the polishing method of the present invention makes it possible to prevent surface processing distortion from occurring.
このような磁気デイスク基板を用いることによ
り信頼性の高い高密度磁気デイスク記録媒体を製
作することができる。また、出発アルミナ系セラ
ミツク基材としては、相対理論密度96%以上の規
格のものを用いることができ量産上有利である。 By using such a magnetic disk substrate, a highly reliable high-density magnetic disk recording medium can be manufactured. Further, as the starting alumina ceramic base material, one having a relative theoretical density of 96% or more can be used, which is advantageous for mass production.
[実施例] 以下本発明を実施例により説明する。[Example] The present invention will be explained below with reference to Examples.
実施例 1
基板としてHIP処理された表面に5μm以下の微
細孔を有する寸法直径200mm×厚さ2mmの純度
99.95%且つ相対理論密度97%、熱膨張係数(20
℃〜ガラス歪点)77×10-7/deg.、平均結晶粒径
4μmのAl2O3セラミツク材を用い、前記基板の表
面粗度を200Å以下に精密ラツプ法にて精密研摩
した後、前記基板上に熱膨張係数(20%〜歪点)
74×10-7/deg.、軟化点720℃、歪点510℃、粉末
粒径200メツシユスルーでSiO272wt%、
Na2O13wt%、K2O6wt%、ZnO4wt%、
Al2O33wt%、TiO22wt%を組成とするガラスを
ペースト状にして約100μmの膜厚で塗布した後、
1000℃で5分間保持し、空気中にてコーテイング
膜を形成した。この時の昇温速度は500℃/Hr、
冷却温度はガラス歪点までは500℃/Hrであり、
ガラス歪点にて1時間保持し、歪取りを行なつて
から徐冷した。この時表面の精度は5μm、気泡は
ほとんどみられなかつた。Example 1 A substrate with a purity of 200 mm in diameter and 2 mm in thickness with micropores of 5 μm or less on the HIP-treated surface
99.95% and relative theoretical density 97%, coefficient of thermal expansion (20
°C to glass strain point) 77×10 -7 /deg., average grain size
After precision polishing the substrate to a surface roughness of 200 Å or less using a 4 μm Al 2 O 3 ceramic material, the thermal expansion coefficient (20% to strain point) was applied to the substrate.
74×10 -7 /deg., softening point 720℃, strain point 510℃, powder particle size 200 mesh through, SiO 2 72wt%,
Na2O13wt %, K2O6wt %, ZnO4wt%,
After making a paste of glass with a composition of 3wt% Al 2 O 3 and 2wt% TiO 2 and applying it to a film thickness of about 100μm,
The temperature was maintained at 1000°C for 5 minutes to form a coating film in air. The temperature increase rate at this time is 500℃/Hr,
The cooling temperature is 500℃/Hr until the glass strain point.
The glass was held at the glass strain point for 1 hour, the strain was removed, and then slowly cooled. At this time, the surface accuracy was 5 μm, and almost no bubbles were observed.
次に形成されたコーテイング膜面を粒径2000メ
ツシユスルーのGC砥粒、粒径6000メツシユスル
ーのCeO2砥粒を用いて前加工を行ないその後、
粒径0.01μmのSiO2微粉末を5wt%純水中に懸濁し
た懸濁液中でラツプ盤としてSn盤を用いラツプ
荷重0.5Kg/cm2にてMCPして表面粗度40Åに仕上
げたその時の取代は3μmで平坦度は1μmであつ
た。 Next, the surface of the formed coating film is pre-processed using GC abrasive grains with a grain size of 2000 mesh through and CeO 2 abrasive grains with a grain size of 6000 mesh through.
A suspension of SiO 2 fine powder with a particle size of 0.01 μm in 5 wt% pure water was subjected to MCP using an Sn disc as a lapping disc at a lapping load of 0.5 kg/cm 2 to give a surface roughness of 40 Å. At that time, the machining allowance was 3 μm and the flatness was 1 μm.
第1図Aに本発明におけるMCP後のガラスコ
ーテイング膜の表面状況を、同図Bにコーテイン
グ前の基板の表面状況を示す。 FIG. 1A shows the surface condition of the glass coating film after MCP according to the present invention, and FIG. 1B shows the surface condition of the substrate before coating.
第1図における表面状況は触針径0.1μmRの薄
膜段差測定器(Talystep)にて測定した結果で
ある。 The surface condition in FIG. 1 is the result of measurement using a thin film step measuring device (Talystep) with a stylus diameter of 0.1 μmR.
第1図よりセラミツク基板表面の微細孔は本発
明によるガラスコーテイング膜のMCPにより表
面層の無孔化が得られ、表面粗度40Åに仕上げら
れたことは明らかである。 It is clear from FIG. 1 that the fine pores on the surface of the ceramic substrate were made non-porous in the surface layer by the MCP of the glass coating film according to the present invention, and the surface roughness was finished to 40 Å.
膜と、基板の付着力を判定する方法として硬度
計を用いて打重を50gより順次1000gまで増大し
ガラスコーテイング膜が剥離するかを判定基準と
したところ、1000gまで剥離はなく、強固な付着
力を示した。表面加工流動層厚さはエリプソメー
タで測定したところで、20Å以下であつた。 As a method to judge the adhesion between the film and the substrate, we used a hardness tester to increase the loading weight from 50g to 1000g, and the criterion was whether the glass coating film would peel off. He showed his strength. The thickness of the surface-treated fluidized bed was measured with an ellipsometer and was less than 20 Å.
実施例 2
基板としてHIP処理された表面に3μm以下の微
細孔を有する寸法直径100mm×厚さ2mm、純度
99.95%、相対理論密度99%、熱膨張係数(20℃
〜ガラス歪点)78×10-7/deg.、Al2O365wt%の
Al2O3−TiC系セラミツク材(平均結晶粒径4μm)
を用い、前記基板の表面粗度を200Å以下に精密
研摩後、前記基板上に高周波スパツタ装置を用
い、ターゲツト板として寸法直径350mm×厚さ6
mmの純度99.9%のSiO2を使用し、約0.1μm程度ス
パツタ膜を形成後、熱膨張係数(20℃〜歪点)77
×10-7/deg.、軟化点470℃、歪点380℃で
PbO60wt%、ZnO19wt%、B2O312wt%、
SiO29wt%を組成とするガラスを200メツシユス
ルーまで粉砕後、ペースト状にして30μmの膜厚
を塗布し大気中にて800℃で10分間保持しコーテ
イングを行なつた。この時昇温速度は500℃/Hr
で400℃にて1時間保持後、同様の500℃/Hrの
昇温速度にて800℃まで昇温し、10分間保持した。
冷却速度は、歪点までは500℃/Hrで冷却し、歪
点にて1時間保持した後徐冷した。形成したコー
テイング膜を粒径0.05μmのCeO2微粉末を2wt%
純水中に懸濁した懸濁液中でラツプ盤として硬質
クロスを使用しラツプ荷重1Kg/cm2にてMCPに
より表面粗度を40Åに仕上げたそのときの取代は
20μmであつた。Example 2 Substrate with micropores of 3 μm or less on the HIP-treated surface Dimensions: diameter 100 mm x thickness 2 mm, purity
99.95%, relative theoretical density 99%, coefficient of thermal expansion (20℃
~Glass strain point) 78×10 -7 /deg., Al 2 O 3 65wt%
Al 2 O 3 −TiC ceramic material (average grain size 4 μm)
After precision polishing the surface roughness of the substrate to 200 Å or less using
Using SiO 2 with a purity of 99.9% mm, after forming a sputter film of about 0.1 μm, the coefficient of thermal expansion (20℃ ~ strain point) is 77.
×10 -7 /deg., softening point 470℃, strain point 380℃
PbO60wt%, ZnO19wt%, B2O3 12wt %,
Glass having a composition of 9 wt% SiO 2 was crushed to a mesh throughput of 200, made into a paste, coated to a thickness of 30 μm, and coated by holding the glass at 800° C. for 10 minutes in the atmosphere. At this time, the temperature increase rate is 500℃/Hr
After holding at 400°C for 1 hour, the temperature was raised to 800°C at the same temperature increase rate of 500°C/Hr and held for 10 minutes.
The cooling rate was 500° C./Hr until the strain point was reached, and after being held at the strain point for 1 hour, it was gradually cooled. The formed coating film was coated with 2wt% of CeO 2 fine powder with a particle size of 0.05μm.
When the surface roughness is finished to 40Å by MCP using a hard cloth as a lapping plate in a suspension suspended in pure water and a lapping load of 1 kg/cm 2, the machining allowance is
It was 20μm.
第2図Aに本実施例のMCP後のガラスコーテ
イング膜の表面状況を同図Bにコーテイングの基
材の表面状況を示す。なお表面状況は実施例1と
同一の薄膜段差測定器を使用した。 FIG. 2A shows the surface condition of the glass coating film after MCP of this example, and FIG. 2B shows the surface condition of the coating base material. Note that the same thin film step measuring device as in Example 1 was used to measure the surface condition.
第2図よりセラミツク基板表面の微細孔は本発
明によるガラスコーテイング膜のMCPにより表
面層の無孔化が得られ、表面粗度40Åに仕上げら
れたことは明らかである。 It is clear from FIG. 2 that the fine pores on the surface of the ceramic substrate were made non-porous in the surface layer by the MCP of the glass coating film according to the present invention, and the surface roughness was finished to 40 Å.
表面加工流動層(Beilby layer)厚さは20Å以
下であつた。 The thickness of the surface treatment fluidized bed (Beilby layer) was less than 20 Å.
実施例 3
基材としてHIP処理された表面に5μm以下の微
細孔を有する寸法直径200mm×厚さ2mm、相対理
論密度97%、熱膨張係数(20〜510℃)78×
10-7/deg.、Al2O365wt%のAl2O3−TiC系セラ
ミツク材(アルミナ平均結晶粒径4μm、TiC平均
結晶粒径2μm)を用い、前記基板の表面粗度を
200Å以下に精密ラツプ法にて精密研摩した後、
前記基材上に高周波スパツタ装置を用い、ターゲ
ツト板として熱膨張係数74×10-7/deg.(20〜510
℃)、寸法直径350mm×厚さ6mmのSiO272wt%、
Na2O12wt%、K2O6wt%、ZnO4wt%、
Al2O33wt%、TiO23wt%を組成とするガラスを
使用してスパツタAr圧1×10-5mbar到達排気の
後スパツタリングを行なつた。基板面の洗浄の
為、正スパツタ前に表面層を500Å程度逆スパツ
タクリーニングで除去した。Example 3 Dimensions: diameter 200 mm x thickness 2 mm, relative theoretical density 97%, coefficient of thermal expansion (20-510°C) 78 x HIP-treated surface with micropores of 5 μm or less as a base material
The surface roughness of the substrate was
After precision polishing to 200Å or less using the precision lap method,
A high-frequency sputtering device was used on the base material to form a target plate with a coefficient of thermal expansion of 74×10 -7 /deg. (20 to 510
°C), SiO 2 72wt% with dimensions 350mm diameter x 6mm thickness,
Na2O12wt %, K2O6wt %, ZnO4wt%,
Sputtering was performed using a glass having a composition of 3 wt% Al 2 O 3 and 3 wt% TiO 2 after evacuation to reach an Ar pressure of 1×10 −5 mbar. To clean the substrate surface, approximately 500 Å of the surface layer was removed by reverse sputter cleaning before forward sputtering.
正スパツタの投入パワーは3kWである。基板
側に負のバイアス(−100V)を印加した。バイ
アス効果により、セラミツクボア部のステツプカ
バーレージが図られ、ボア部にも、ガラスが付着
される。なおスパツタ膜面の表面粗度は500Å程
度であつた。従来の酸化物のスパツタ法ではスパ
ツタ速度が遅く、膜付けに時間を要したが電極間
距離を40mmとして投入パワーを大きくしたことに
より、スパツタレートは500Å/minで、20μm形
成するのに400分を要した。 The input power of the normal sputter is 3kW. A negative bias (-100V) was applied to the substrate side. Due to the bias effect, step coverage of the ceramic bore is achieved, and glass is also adhered to the bore. The surface roughness of the sputtered film was approximately 500 Å. In the conventional oxide sputtering method, the sputtering speed was slow and it took time to form a film, but by setting the distance between the electrodes to 40 mm and increasing the input power, the sputtering rate was 500 Å/min, and it took 400 minutes to form a 20 μm film. It took.
次に形成されたスパツタ膜面を粒径0.01μmの
SiO2微粉末を5wt%純水中に懸濁した懸濁液中で
ラツプ盤としてSn盤を用いラツプ荷重0.5Kg/cm2
にてMCPして表面粗度40Åに仕上げたその時の
取代は3μmで平坦度は1μmであつた。 Next, the surface of the formed sputtered film was
A lapping load of 0.5 Kg/cm 2 was applied using an Sn disc as a lapping disc in a suspension of 5wt% SiO 2 fine powder suspended in pure water.
MCP was performed to obtain a surface roughness of 40 Å.The machining allowance at that time was 3 μm and the flatness was 1 μm.
本実施例により得られたMCP後のスパツタ被
膜の表面状況、スパツタ前の基板の表面状況は、
夫々第3図A,Bに示す。なお表面状況は実施例
1と同一の薄膜段差測定器を使用した。 The surface condition of the sputtered film after MCP and the surface condition of the substrate before sputtering obtained in this example are as follows:
These are shown in FIGS. 3A and 3B, respectively. Note that the same thin film step measuring device as in Example 1 was used to measure the surface condition.
以上の通り、本発明は基板欠陥に起因した製品
の歩留低下を防止すると共に、無孔化基板面に形
成される被着磁性膜の特性保障、信頼性向上に有
効である。 As described above, the present invention is effective in preventing a decrease in product yield due to substrate defects, as well as ensuring characteristics and improving reliability of a magnetized film formed on a non-porous substrate surface.
第1図、第2図及び第3図の各A,Bは、夫々
本発明の実施例1、2及び3の表面状況の測定結
果を示すグラフである。いずれについてもAは研
摩後のガラスコーテイング膜表面、Bはコーテイ
ング前のアルミナ基材表面を示す。
A and B in FIGS. 1, 2, and 3 are graphs showing the measurement results of the surface conditions of Examples 1, 2, and 3 of the present invention, respectively. In each case, A indicates the surface of the glass coating film after polishing, and B indicates the surface of the alumina base material before coating.
Claims (1)
以上のアルミナ系セラミツク材料表面上に、表面
粗度80Å以下、且つ無孔化無歪表面の膜厚0.3μm
〜200μm、前記基板との熱膨張係数の相対差が1
×10-6/deg.以下であるガラスのコーテイング膜
を有することを特徴とする記録デイスク用基板。 2 基板表面のガラスコーテイング膜はその上に
直接磁性膜が形成される表面を成す特許請求の範
囲第1項に記載の記録デイスク用基板。[Claims] 1. Relative theoretical density of 96% with micropores of 5 μm or less
On the surface of the above alumina ceramic material, the surface roughness is 80 Å or less, and the film thickness of the non-porous and unstrained surface is 0.3 μm.
~200μm, relative difference in thermal expansion coefficient with the substrate is 1
A substrate for a recording disk, characterized in that it has a glass coating film having a glass coating film of x10 -6 /deg. or less. 2. The recording disk substrate according to claim 1, wherein the glass coating film on the substrate surface constitutes a surface on which a magnetic film is directly formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18894287A JPS6361412A (en) | 1987-07-30 | 1987-07-30 | Substrate for magnetic disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18894287A JPS6361412A (en) | 1987-07-30 | 1987-07-30 | Substrate for magnetic disk |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59169409A Division JPS6148123A (en) | 1984-08-15 | 1984-08-15 | Substrate for magnetic disk and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6361412A JPS6361412A (en) | 1988-03-17 |
| JPH0330208B2 true JPH0330208B2 (en) | 1991-04-26 |
Family
ID=16232605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18894287A Granted JPS6361412A (en) | 1987-07-30 | 1987-07-30 | Substrate for magnetic disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6361412A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS514088B2 (en) * | 1971-09-13 | 1976-02-09 | ||
| JPS514090B2 (en) * | 1971-09-29 | 1976-02-09 |
-
1987
- 1987-07-30 JP JP18894287A patent/JPS6361412A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6361412A (en) | 1988-03-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0330209B2 (en) | ||
| US4659606A (en) | Substrate members for recording disks and process for producing same | |
| KR100188901B1 (en) | A glass-ceramic substrate for a magnetic disk | |
| JP2886872B2 (en) | Magnetic disk substrate and magnetic disk | |
| JP3131138B2 (en) | Crystallized glass substrate for magnetic disk | |
| JPS60138730A (en) | Substrate for magnetic disc | |
| US4808455A (en) | Magnetic recording disc and process for producing the same | |
| US4816128A (en) | Process for producing substrate member for magnetic recording disc | |
| JPH0935234A (en) | Substrate for magnetic disk and its production | |
| JP2000207733A (en) | Magnetic disc, production thereof and magnetic recorder employing the same | |
| JPS61131229A (en) | Substrate for magnetic disk and its manufacture | |
| JPH0330208B2 (en) | ||
| JPH044656B2 (en) | ||
| JPH10241134A (en) | Glass substrate for information-recording medium and magnetic recording medium using the same | |
| JPH0352128B2 (en) | ||
| JPH0378693B2 (en) | ||
| JPH0249492B2 (en) | JIKIDEISUKUYOKIBANOYOBISONOSEIZOHOHO | |
| JPS61132576A (en) | Substrate for magnetic disc and manufacture | |
| JPH0432011B2 (en) | ||
| JP2000203888A (en) | Production of glass substrate for information recording medium, production of information recording medium, production of glass substrate for magnetic disc and production of magnetic disc | |
| JP2547994B2 (en) | Magnetic recording media | |
| CN105684080B (en) | Glass substrate for disc and heat-assisted magnetic recording disk | |
| JPS60127532A (en) | Magnetic disk substrate and its manufacturing method | |
| JPH0346308A (en) | Manufacture of electronic component | |
| JPH0750537A (en) | Method for manufacturing piezoelectric resonator |