JPH0330270U - - Google Patents
Info
- Publication number
- JPH0330270U JPH0330270U JP8995289U JP8995289U JPH0330270U JP H0330270 U JPH0330270 U JP H0330270U JP 8995289 U JP8995289 U JP 8995289U JP 8995289 U JP8995289 U JP 8995289U JP H0330270 U JPH0330270 U JP H0330270U
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- vapor phase
- phase growth
- growth apparatus
- respect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図ａは本案による実施例１の平面図、ｂは
同中央縦断面側面図、ｃは同底面図、第２図は従
来のサセプタと実施例１，２の発熱量の分布を示
す図、第３図は従来のサセプタと実施例１，２と
を実際の原料ガスの流れにおいて、設定温度６２
５℃としたときの温度勾配を示す図、第４図ａは
実施例２の平面図、ｂは同一部断面側面図、ｃは
同底面図、第５図は従来のＭＯＣＶＤ装置の概略
図である。
１……カーボンサセプタ、２……基板受け、３
……プローブ穴、４……凹凸。
Fig. 1a is a plan view of Embodiment 1 according to the present invention, b is a longitudinal cross-sectional side view of the same, c is a bottom view of the same, and Fig. 2 is a diagram showing the distribution of calorific value of a conventional susceptor and Embodiments 1 and 2. , FIG. 3 shows the conventional susceptor and Examples 1 and 2 at a set temperature of 62 in the actual flow of raw material gas.
A diagram showing the temperature gradient when the temperature is set at 5°C. Figure 4a is a plan view of Example 2, b is a side view of the same partial cross section, c is a bottom view of the same, and Figure 5 is a schematic diagram of a conventional MOCVD apparatus. be. 1...Carbon susceptor, 2...Substrate holder, 3
...Probe hole, 4...Irregularities.
Claims (1)
に角度をなす複数の面を有する導電性材質よりな
る気相成長装置用サセプタにおいて、前記面の少
なくとも一部に凹凸形状を有することを特徴とす
る気相成長装置用サセプタ。 (2) 成長用原料ガスの流れ方向に対して、上流
側の面の少なくとも一部に凹凸が形成されている
ことを特徴とする請求項(1)に記載の気相成長装
置用サセプタ。[Claims for Utility Model Registration] (1) In a susceptor for a vapor phase growth apparatus made of a conductive material and having a plurality of surfaces that form an angle with each other with respect to the flow direction of the growth source gas, at least a portion of the surfaces A susceptor for a vapor phase growth apparatus, characterized in that the susceptor has an uneven shape. (2) The susceptor for a vapor phase growth apparatus according to claim (1), characterized in that unevenness is formed on at least a part of the upstream surface with respect to the flow direction of the growth source gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8995289U JPH0330270U (en) | 1989-07-31 | 1989-07-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8995289U JPH0330270U (en) | 1989-07-31 | 1989-07-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0330270U true JPH0330270U (en) | 1991-03-25 |
Family
ID=31639501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8995289U Pending JPH0330270U (en) | 1989-07-31 | 1989-07-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0330270U (en) |
-
1989
- 1989-07-31 JP JP8995289U patent/JPH0330270U/ja active Pending
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