JPH0330878U - - Google Patents
Info
- Publication number
- JPH0330878U JPH0330878U JP9125989U JP9125989U JPH0330878U JP H0330878 U JPH0330878 U JP H0330878U JP 9125989 U JP9125989 U JP 9125989U JP 9125989 U JP9125989 U JP 9125989U JP H0330878 U JPH0330878 U JP H0330878U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- test chamber
- set stage
- semiconductor
- semiconductor lasers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000032683 aging Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第１図はこの考案の一実施例による半導体レー
ザのエージング装置を示す斜視図、第２図はこの
考案の他の実施例を示す斜視図、第３図は従来の
半導体レーザのエージング装置を示す斜視図であ
る。
図において、１……ＬＤ、２……受光素子、３
……電流注入用プローブ、４……セツトステージ
、５……ヒータである。なお、各図中の同一符号
は同一または相当部分を示す。
FIG. 1 is a perspective view showing a semiconductor laser aging device according to one embodiment of this invention, FIG. 2 is a perspective view showing another embodiment of this invention, and FIG. 3 is a conventional semiconductor laser aging device. FIG. In the figure, 1... LD, 2... Light receiving element, 3
. . . current injection probe, 4 . . . set stage, 5 . . . heater. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
でセツトステージ上に配置するとともに、前記各
半導体レーザに対応する受光素子を配置し、この
セツトステージをテストチヤンバ内に設置し、前
記テストチヤンバを温度コントロールして前記半
導体レーザをある一定の時間連続あるいは断続動
作させてエージングする構成としたことを特徴と
する半導体レーザのエージング装置。 Semiconductor lasers before being hermetically sealed are placed on a set stage at predetermined intervals, light receiving elements corresponding to each of the semiconductor lasers are placed, this set stage is placed inside a test chamber, and the test chamber is temperature controlled. A semiconductor laser aging device characterized in that the semiconductor laser is aged by operating the semiconductor laser continuously or intermittently for a certain period of time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9125989U JPH0330878U (en) | 1989-08-02 | 1989-08-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9125989U JPH0330878U (en) | 1989-08-02 | 1989-08-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0330878U true JPH0330878U (en) | 1991-03-26 |
Family
ID=31640757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9125989U Pending JPH0330878U (en) | 1989-08-02 | 1989-08-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0330878U (en) |
-
1989
- 1989-08-02 JP JP9125989U patent/JPH0330878U/ja active Pending
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