JPH0334406A - Multilayer type ferromagnetic substance - Google Patents
Multilayer type ferromagnetic substanceInfo
- Publication number
- JPH0334406A JPH0334406A JP16872089A JP16872089A JPH0334406A JP H0334406 A JPH0334406 A JP H0334406A JP 16872089 A JP16872089 A JP 16872089A JP 16872089 A JP16872089 A JP 16872089A JP H0334406 A JPH0334406 A JP H0334406A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- silicon
- nitride
- iron
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005294 ferromagnetic effect Effects 0.000 title abstract description 8
- 239000000126 substance Substances 0.000 title abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010955 niobium Substances 0.000 claims abstract description 15
- 229910052742 iron Inorganic materials 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 10
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims abstract description 7
- -1 silicon nitrides Chemical class 0.000 claims description 7
- 230000005291 magnetic effect Effects 0.000 abstract description 80
- 230000035699 permeability Effects 0.000 abstract description 22
- 230000004907 flux Effects 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 11
- 239000000203 mixture Substances 0.000 abstract description 6
- 150000004767 nitrides Chemical class 0.000 abstract description 6
- 238000010030 laminating Methods 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 229910020776 SixNy Inorganic materials 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000010408 film Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 description 8
- 229910000676 Si alloy Inorganic materials 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000696 magnetic material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910000929 Ru alloy Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ITXSHZFXAHDNMK-UHFFFAOYSA-N iron ruthenium Chemical compound [Fe].[Ru] ITXSHZFXAHDNMK-UHFFFAOYSA-N 0.000 description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910018062 Ni-M Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- BDVUYXNQWZQBBN-UHFFFAOYSA-N [Co].[Zr].[Nb] Chemical compound [Co].[Zr].[Nb] BDVUYXNQWZQBBN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910001337 iron nitride Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Magnetic Heads (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は新規な多層状強磁性体に関するものである。さ
らに詳しくいえば、本発明は高飽和磁束密度、高透磁率
及び零付近の磁歪定数を有する上、軟磁気特性の耐熱安
定性が良好であるなど優れた特徴を有し、高密度記録用
磁気ヘッド及び薄膜インダクタ等の材料として好適に利
用しうる多層状強磁性体に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a novel multilayer ferromagnetic material. More specifically, the present invention has excellent features such as high saturation magnetic flux density, high magnetic permeability, and magnetostriction constant near zero, as well as good thermal stability of soft magnetic properties, The present invention relates to a multilayer ferromagnetic material that can be suitably used as a material for heads, thin film inductors, etc.
従来の技術
近年、VTRなどの磁気記録再生装置においては、記録
信号の高密度化や高周波数化などが進められており1こ
れに伴い、磁気記録媒体−とじて磁性粉に鉄、コバルト
、ニッケルなどの強磁性金属の粉末を用いた、いわゆる
メタルテープや強磁性金属材料を蒸着などの手段により
ベースフィルム上に被着した、いわゆる蒸着テープなど
が実用化されつつある。BACKGROUND OF THE INVENTION In recent years, in magnetic recording and reproducing devices such as VTRs, the recording signal density and frequency have been increased. So-called metal tapes using ferromagnetic metal powders such as ferromagnetic metal powders, and so-called vapor-deposited tapes in which ferromagnetic metal materials are deposited on a base film by means such as vapor deposition, are being put into practical use.
このような磁気記録媒体は高い保磁力を有するので、記
録に用いる磁気ヘッドのヘッド材料としては、高飽和磁
束密度を有するものが要求される。特に薄膜磁気ヘッド
などでは、記録密度を向上させるために、ヘッドの磁極
先端の厚さを薄くする必要があり1これに伴って生じる
磁極先端の磁気飽和を防ぐために高飽和磁束密度を有す
る磁性材料が必要となる。また、垂直磁気記録方式にお
いても、例えば垂直磁気記録用単磁極型磁気ヘッドの主
磁極はa2μm程度と極めて薄いため、記録・再生の際
に磁気的に飽和しやすく、それを避けるためには高飽和
磁束密度を有する磁気ヘッド材料が必要となる。Since such a magnetic recording medium has a high coercive force, the head material of the magnetic head used for recording is required to have a high saturation magnetic flux density. In particular, in thin-film magnetic heads, it is necessary to reduce the thickness of the magnetic pole tip of the head in order to improve the recording density.1 To prevent the magnetic saturation of the magnetic pole tip that occurs due to this, a magnetic material with a high saturation magnetic flux density is used. Is required. In addition, in the perpendicular magnetic recording system, for example, the main pole of a single-pole magnetic head for perpendicular magnetic recording is extremely thin, about 2 μm, so it is easily magnetically saturated during recording and reproduction. A magnetic head material with a saturation magnetic flux density is required.
一方、該磁気ヘッド材料は、ヘッドの再生効率の面から
、高透磁率を有することが必要であシ、そのため磁歪定
数がゼロに近いことが望寸しい。On the other hand, the magnetic head material must have high magnetic permeability from the viewpoint of head reproduction efficiency, and therefore it is desirable that the magnetostriction constant be close to zero.
このような高飽和磁束密度、高透磁率及び低磁歪定数を
有し、軟磁気特性をもつ磁性材料としては、これ捷での
種々のものが開発されて釦シ、例えば鉄−ニッケル系合
金(パーマロイ)、鉄−アルミニウム−ケイ素系合金(
センダスト)、鉄−ケイ素−ガリウム−ルテニウム系合
金、コバルト−ジルコニウム−ニオブ系合金のようなコ
バルト系アモルファス合金、鉄−ケイ素系合金(特開昭
57−172705号公報)、鉄−クロム系合金(特開
昭63−60256号公報)などが知られている。As magnetic materials with such high saturation magnetic flux density, high magnetic permeability, and low magnetostriction constant, and soft magnetic properties, various materials have been developed. permalloy), iron-aluminum-silicon alloy (
sendust), cobalt-based amorphous alloys such as iron-silicon-gallium-ruthenium alloys, cobalt-zirconium-niobium alloys, iron-silicon alloys (Japanese Unexamined Patent Publication No. 172705/1983), iron-chromium alloys ( Japanese Patent Application Laid-Open No. 63-60256) is known.
しかしながら、これらの中の鉄系磁性材料は、飽和磁束
密度(Bms)が8〜12kGの範囲内で、数(λS)
及び結晶磁気異方性定数(K)が共に零付近にあること
が必要であシ、そのためには多量の非磁性元素の添加を
必要とするために、飽和磁束密度は高々12kG程度の
ものしか得られていないのが実状である。However, among these iron-based magnetic materials, the saturation magnetic flux density (Bms) is within the range of 8 to 12 kG, and the number (λS)
It is necessary that both the magnetic crystalline anisotropy constant (K) and the magnetocrystalline anisotropy constant (K) be near zero, and this requires the addition of a large amount of nonmagnetic elements, so the saturation magnetic flux density is only about 12 kG at most. The reality is that we are not getting it.
他方、飽和磁束密度が約20kG以上の大きいものとし
て、窒化鉄系のものが種々知られているが、これらは再
現性の面で必ずしも満足しうるものとはいえなかったり
、また保磁力を低く抑えることが困難であるなどの問題
があった。On the other hand, various iron nitride-based materials are known as having a large saturation magnetic flux density of about 20 kG or more, but these cannot necessarily be said to be satisfactory in terms of reproducibility or have a low coercive force. There were problems such as difficulty in suppressing it.
また、これらの鉄系磁性材料は結晶磁気異方性定数が大
きいことから、単層膜として使用する場合、結晶粒の体
積が大きく、それによる結晶磁気異方性の影響を太きく
受けて軟磁気特性が著しく低下するという欠点がある。In addition, since these iron-based magnetic materials have a large magnetocrystalline anisotropy constant, when used as a single layer film, the volume of crystal grains is large, and the resulting magnetocrystalline anisotropy is greatly affected, making it soft. The disadvantage is that the magnetic properties are significantly degraded.
そして、このような欠点を改良するためには、該結晶粒
を微細化して、結晶磁気異方性の影響を低く抑えること
が望ましいので、多層化することによって、強磁性材料
層1層の厚さを薄くして結晶粒を、微細化し、軟磁気特
性を向上させることが試みられている。In order to improve these drawbacks, it is desirable to make the crystal grains finer and suppress the influence of magnetocrystalline anisotropy. Therefore, by forming multiple layers, the thickness of a single ferromagnetic material layer can be reduced. Attempts have been made to improve the soft magnetic properties by thinning the crystal grains and making the crystal grains finer.
強磁性材料層にα−Feを用いた多層状磁性体としては
、例えば鉄系強磁性材料層と二酸化ケイ素から戒る中間
層とを交互に積層したもの(特開昭63−58806号
公報)、鉄−クロム系合金から成る強磁性材料層と二酸
化ケイ素やパーマロイから成る中間層を交互に積層した
もの(特開昭63−60256号公報)など、中間層に
非磁性材料の二酸化ケイ素を用いたものがこれ1で知ら
れている。As a multilayer magnetic material using α-Fe as a ferromagnetic material layer, for example, one in which iron-based ferromagnetic material layers and intermediate layers made of silicon dioxide are alternately laminated (Japanese Patent Laid-Open No. 63-58806) , ferromagnetic material layers made of iron-chromium alloy and intermediate layers made of silicon dioxide or permalloy are alternately laminated (Japanese Patent Laid-Open No. 63-60256), etc., in which silicon dioxide, a non-magnetic material, is used for the intermediate layer. This is the first known thing.
しかしながら、このような中間層に二酸化ケイ素を用い
た多層状磁性体は軟磁気特性を向上させるのにある程度
優れた効果を有するものの、軟磁気特性の耐熱安定性に
ついては必ずしも十分ではない。これは、200〜60
0℃程度の温度に釦いて、該二酸化ケイ素が強磁性材料
層中の鉄と拡散結合を起こしたblあるいは強磁性材料
層の結晶粒を拡大させたジすることによシ特性が低下す
るためである。他方、鉄金主戒分とし、ケイ素やルテニ
ウムを含有する強磁性材料としては、鉄−ケイ素系合金
(特公昭1−8566号公報)、鉄−ケイ素−ルテニウ
ム系合金(ヨーロッパ特許第144.150号明細書)
、鉄−ルテニウム系合金(特開昭62−1398号公報
)などが知られている。However, although such a multilayer magnetic material using silicon dioxide as an intermediate layer has a certain degree of excellent effect in improving soft magnetic properties, the heat resistance stability of the soft magnetic properties is not necessarily sufficient. This is 200 to 60
At a temperature of about 0°C, the silicon dioxide undergoes diffusion bonding with iron in the ferromagnetic material layer, or the crystal grains of the ferromagnetic material layer expand, resulting in a decrease in the characteristics. It is. On the other hand, examples of ferromagnetic materials containing iron and gold and containing silicon and ruthenium include iron-silicon alloys (Japanese Patent Publication No. 1-8566) and iron-silicon-ruthenium alloys (European Patent No. 144.150). number specification)
, iron-ruthenium alloy (Japanese Unexamined Patent Publication No. 1398/1983), etc. are known.
これらのうちで、鉄−ケイ素系合金は飽和磁束密度(B
ms)や透磁率(μiac )が大きいという特性を有
しているが耐食性を欠く。また、この中でケイ素含有量
6.5重量係のものは磁歪定数(λS)が零付近にあシ
、磁気ヘッド用として応用することが試みられているが
、耐食性の点で問題があるため、1だ実用化に至ってい
ない。Among these, iron-silicon alloys have saturation magnetic flux density (B
ms) and magnetic permeability (μiac), but lacks corrosion resistance. Among these, those with a silicon content of 6.5% by weight have a magnetostriction constant (λS) near zero, and attempts have been made to apply them to magnetic heads, but there are problems with corrosion resistance. , 1 has not yet been put into practical use.
次に、鉄−ケイ素−ルテニウム系合金は、高密度磁気記
録の磁気ヘッド用薄膜材料として用いられているが、ケ
イ素含有量の少ない領域では磁歪定数が太きく、ヘッド
として使用できないし、ケイ素含有量の多い領域では磁
歪定数は零付近になるものの飽和磁束密度が15kG以
下に低下するため、利用範囲が制限されるのを免れない
。Next, iron-silicon-ruthenium alloys are used as thin film materials for magnetic heads for high-density magnetic recording, but their magnetostriction constants are large in regions with low silicon content, making them unusable as heads; In a region where the amount is large, the magnetostriction constant is close to zero, but the saturation magnetic flux density decreases to 15 kG or less, which inevitably limits the range of use.
他方、鉄−ルテニウム系合金は、飽和磁束密度が高く、
磁歪定数が零に近いという特性を有するが、透磁率が小
さく、これを多層化した場合でもせいぜい1800程度
である上に、熱加工によfi 1000以下に低下する
ので実用上問題がある。On the other hand, iron-ruthenium alloys have a high saturation magnetic flux density,
Although it has the property of having a magnetostriction constant close to zero, it has a low magnetic permeability, which is only about 1800 at most even when multilayered, and furthermore, it decreases to less than 1000 due to thermal processing, which poses a practical problem.
発明が解決しようとする課題
本発明は、このような事情のもとで、高飽和磁束密度、
高透磁率及び零付近の磁歪定数を有する上、軟磁気特性
の耐熱安定性が良好な多層状強磁性体を提供することを
目的としてなされたものである。Problems to be Solved by the Invention Under these circumstances, the present invention solves the problem of high saturation magnetic flux density,
This was done for the purpose of providing a multilayer ferromagnetic material that has high magnetic permeability and a magnetostriction constant near zero, and also has good heat resistance stability of soft magnetic properties.
課題を解決するための手段
本発明者らは、前記の優れた特徴を有する多層状強磁性
体を開発するために鋭意研究を重ねた結果、鉄系強磁性
層とともに中間層として特定のケイ素化合物と特定の金
属の窒化物とを含有する混合物を用い、これらを基板上
に交互に積層したものが、その目的に適合しうろことを
見い出し、この知見に基づいて本発明を完成するに至っ
た。Means for Solving the Problems As a result of extensive research in order to develop a multilayer ferromagnetic material having the above-mentioned excellent characteristics, the present inventors have developed a method using a specific silicon compound as an intermediate layer together with an iron-based ferromagnetic layer. The inventors discovered that a mixture containing a nitride of a specific metal and a nitride of a specific metal, and alternately layered these on a substrate, is suitable for the purpose, and based on this knowledge, the present invention was completed. .
すなわち、本発明は基板上に(4)鉄系材料から戒る強
磁性材料層、及び(B)(イ)ケイ素の窒化物、酸化物
から選ばれた少なくとも1種と、(ロ) Nbもしくは
窒化ニオブのいずれか1種を含有する混合物から戒る中
間層を交互に積層したことを特徴とする多層状強磁性体
を提供するものである。That is, the present invention provides a substrate with (4) a ferromagnetic material layer selected from iron-based materials, and (B) at least one selected from (a) silicon nitrides and oxides, and (b) Nb or The present invention provides a multilayer ferromagnetic material characterized by alternately laminating intermediate layers made of a mixture containing any one type of niobium nitride.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明の多層状強磁性体において、磁性層として用いら
れる鉄系強磁性材料については、高飽和磁束密度、高透
磁率を有し、かっ零付近の磁歪定数を有するものであれ
ばよくて、特に制限はなく、従来磁気ヘッド用などの磁
性薄膜に慣用されている鉄系強磁性材料を用いることが
できる。このような鉄系強磁性材料としては、例えばパ
ーーroイ、Fe−5i−At系合金、Fe −3i−
Ru系合金、Fe−5i系合金、Fe−Ni −M。In the multilayered ferromagnetic material of the present invention, the iron-based ferromagnetic material used as the magnetic layer may have a high saturation magnetic flux density, high magnetic permeability, and a magnetostriction constant near zero. There are no particular limitations, and iron-based ferromagnetic materials commonly used in magnetic thin films for magnetic heads and the like can be used. Examples of such iron-based ferromagnetic materials include P-ROI, Fe-5i-At-based alloy, Fe-3i-
Ru alloy, Fe-5i alloy, Fe-Ni-M.
系合金、Fe −Ga−5i系合金、Fe−Cr系合金
などが挙げられ、これらはそれぞれ単独で用いてもよい
し、2種以上を組み合わせて用いてもよい。Examples include Fe-Ga-5i-based alloys, Fe-Ga-5i-based alloys, and Fe-Cr-based alloys, and each of these may be used alone or in combination of two or more.
本発明の多層状強磁性体にかける中間層は、(イ)ケイ
素の窒化物、酸化物の中から選ばれた少なくとも1種と
、(ロ) Nbもしくは窒化ニオブのいずれか1種以上
を含有する。前記(ロ)成分の金属窒化物を添加せずに
、(イ)成分のケイ素化合物のみでは、軟磁気特性の耐
熱安定性が十分ではないが、(ロ)成分を添加すること
によう、中間層は熱的に安定となう、良好な軟磁気特性
を示すようになる。該(イ)IfC分におけるケイ素の
窒化物としては、一般式SixNy (非平衡相も含む
、ただしX及びyは式0.4≦X/y≦1.1の関係を
満たす数である)で示される化合物が好ましい。−方、
ケイ素の酸化物としては、一般式5iOz(ただし、2
は1〜2の範囲の数である)で示される化合物が好まし
い。The intermediate layer applied to the multilayered ferromagnetic material of the present invention contains (a) at least one selected from silicon nitrides and oxides, and (b) one or more of Nb or niobium nitride. do. Although the heat resistance stability of the soft magnetic properties is not sufficient with only the silicon compound of the component (A) without adding the metal nitride of the component (B), it is possible to add an intermediate layer by adding the component (B). The layer becomes thermally stable and exhibits good soft magnetic properties. The silicon nitride in the IfC component (a) is expressed by the general formula SixNy (including non-equilibrium phases, where X and y are numbers that satisfy the relationship of formula 0.4≦X/y≦1.1). The compounds shown are preferred. - way,
The silicon oxide has the general formula 5iOz (however, 2
is a number in the range of 1 to 2) are preferred.
本発明の多層状強磁性体に用いられる基板については特
に制限はなく、従来、磁気ヘッド用などの磁性薄膜に慣
用されているもの、例えばガラスやプラスチック上に紫
外線などで硬化するポリマー層を設けたもの、アクリル
系樹脂、スチレン系樹脂、ポリカーボネート樹脂゛、酢
酸ビニル樹脂、塩化ビニル樹脂、ポリオレフィン系樹脂
などの透明材料 から成る基板、あるいはアルミニウム
、フェライトなどの不透明材料から成る基板を用いるこ
とができる。There are no particular restrictions on the substrate used for the multilayered ferromagnetic material of the present invention, and it may be one that has been conventionally used for magnetic thin films for magnetic heads, such as glass or plastic with a polymer layer that is cured by ultraviolet light. A substrate made of a transparent material such as acrylic resin, styrene resin, polycarbonate resin, vinyl acetate resin, vinyl chloride resin, or polyolefin resin, or a substrate made of an opaque material such as aluminum or ferrite can be used. .
本発明の多層状強磁性体は、これらの基板上に、前記の
磁性層と中間層とを交互に積層したものであり1単層の
厚さを薄くして積層したものであシ、単層の厚さを薄く
して積層数を増やす方が好ましいが、経済性や作業性な
どの点から通常磁気層の厚みは200〜toooAの範
囲で、中間層の厚みは10〜1oo、にの範囲で選ばれ
、また、積層数は4〜140層の範囲に、全体の厚さは
0.4〜3μmの範囲にあることが好ましい。The multilayered ferromagnetic material of the present invention is obtained by laminating the above-mentioned magnetic layers and intermediate layers alternately on these substrates, and is obtained by laminating one single layer with a thinner thickness. It is preferable to reduce the thickness of the layer and increase the number of laminated layers, but from the viewpoint of economy and workability, the thickness of the magnetic layer is usually in the range of 200 to 100A, and the thickness of the intermediate layer is 10 to 10A. It is preferable that the number of laminated layers is in the range of 4 to 140 layers, and the total thickness is in the range of 0.4 to 3 μm.
本発明において、磁性層及び中間層を設ける方法につい
ては特に制限はなく、通常薄膜の形成に用いられる方法
、例えば真空蒸着法、スパッタリング法、イオンブレー
ティング法、cvD法などの中から任意の方法を選択し
て用いることができる。また、ケイ素窒化物と(ロ)の
Nb もしくは窒化ニオブのいずれか1種を含有する
中間層を形成する場合は、蒸着原料にはSi 又はS
i x’Ny’若しくはその両方と前記(ロ)Nbを所
定の割合で含有しかつ雰囲気ガスとして所定の割合の窒
素を含む好捷しくはアルゴンと窒素との混合ガスを使用
して蒸着を行えばよい。この際、原料の組成、雰囲気ガ
ス中の窒素の含有量、蒸着真空度、蒸着速度などを選択
することにより、形成される中間層に卦けるS i x
NyのV、値を制御することができる。また、ケイ素酸
化物と(ロ)成分の金属窒化物との混合物から成る中間
層を形成する場合は、蒸着原料にはSiO又は5i02
若しくはその両方と前記(ロ)のNbを所定の割合で含
有させ、前記と同様にして窒素酸素を含む雰囲気ガスで
蒸着を行えばよい。この際、SiOと5i02との使用
割合を適当に選択することにより、形成される中間層に
おけるS iozの2値を制御することができる。In the present invention, there are no particular limitations on the method of forming the magnetic layer and intermediate layer, and any method may be used from among the methods normally used for forming thin films, such as vacuum evaporation, sputtering, ion blating, and CVD. can be selected and used. In addition, when forming an intermediate layer containing silicon nitride and any one of (b) Nb or niobium nitride, the vapor deposition raw material contains Si or S.
Evaporation is carried out using a mixed gas containing ix'Ny' or both and the above (b) Nb in a predetermined ratio and containing nitrogen in a predetermined ratio as an atmospheric gas, or preferably a mixed gas of argon and nitrogen. That's fine. At this time, the Si
The V value of Ny can be controlled. In addition, when forming an intermediate layer consisting of a mixture of silicon oxide and metal nitride (component (b)), the vapor deposition raw material may be SiO or 5iO2.
Alternatively, Nb may be contained in a predetermined ratio in combination with both of them and (b) above, and vapor deposition may be performed using an atmospheric gas containing nitrogen and oxygen in the same manner as described above. At this time, by appropriately selecting the usage ratio of SiO and 5i02, the binary value of Sioz in the formed intermediate layer can be controlled.
発明の効果
本発明の多層状強磁性体は、鉄系材料から成る強磁性層
、及びケイ素の窒化物や酸化物にNbもしくは窒化ニオ
ブのいずれか1種以上を含有する中間層を、基板上に交
互に積層したものであって、高飽和磁束密度、高透磁率
及び零付近の磁歪定数を有する上、軟磁気特性の耐熱安
定性が良好であるなど、優れた特徴を有し、磁気ヘッド
の磁性膜などとして好適に用いられる。Effects of the Invention The multilayer ferromagnetic material of the present invention has a ferromagnetic layer made of an iron-based material, and an intermediate layer containing at least one of Nb or niobium nitride in silicon nitride or oxide, on a substrate. It has excellent characteristics such as high saturation magnetic flux density, high magnetic permeability, and magnetostriction constant near zero, as well as good thermal stability of soft magnetic properties. It is suitably used as a magnetic film, etc.
実施例
次に、実施例により本発明をさらに詳細に説明するが、
本発明はこれらの例によってなんら限定されるものでは
ない。Examples Next, the present invention will be explained in more detail with reference to examples.
The present invention is not limited in any way by these examples.
なか、得られた多層状強磁性体の組成、保磁力、透磁率
は次のようにして求めた。The composition, coercive force, and magnetic permeability of the obtained multilayered ferromagnetic material were determined as follows.
(1)組成
EPMA (Electron Probe Micr
oanalysis )により求めた。(1) Composition EPMA (Electron Probe Micro
oanalysis).
(2)保磁力 He(Oe) 薄膜ヒストロスコープを用いて測定した。(2) Coercive force He (Oe) Measurements were made using a thin film histroscope.
(3)透磁率 μiac
磁化困難軸方向に測定磁場が印加されるように、フェラ
イトヨークを膜面に当て、インピーダンスアナライザを
用いて3 moeの磁場及び測定周波数5 MHzでイ
ンダクタンスを測定することにより求めた。(3) Magnetic permeability μiac Determined by applying a ferrite yoke to the film surface so that the measurement magnetic field is applied in the direction of the hard magnetization axis, and measuring the inductance using an impedance analyzer with a magnetic field of 3 moe and a measurement frequency of 5 MHz. Ta.
実施例1゜
ケイ素3.4at%含有鉄−ケイ素合金ターゲット及び
窒化ケイ素(Si3N4)ターゲット上にニオブの小片
を種々の面積比で載置した複合ターゲットを用い、RF
マグネトロンスパッタ装置にて3oo0e(エルステッ
ド)の磁場中で交互にスパッタリングを行い、基板上に
厚さ500Aの鉄−ケイ素磁性合金から成る磁性層と厚
さ40Aの5ixNy−ニオブ−窒化ニオブから成る中
間層が交互に15層積層された総膜厚約0.8μmの多
層膜を形成した。基板には板厚1.1 rranの結晶
化ガラス(商品名フォトセラム)を用いた。Example 1゜RF
Sputtering is performed alternately in a magnetic field of 3oo0e (Oersted) using a magnetron sputtering device to form a magnetic layer made of iron-silicon magnetic alloy with a thickness of 500A and an intermediate layer made of 5ixNy-niobium-niobium nitride with a thickness of 40A on the substrate. A multilayer film having a total thickness of about 0.8 μm was formed by stacking 15 layers alternately. A crystallized glass (trade name: Photoceram) with a plate thickness of 1.1 rran was used as the substrate.
また、スパッタリングの条件は、鉄−ケイ素合金層の形
成にはArガス雰囲気下でs Ar圧15mTorr
、投入パワー12 w7’ct/i s基板温度300
℃とし、5ixNy−Nb−窒化ニオブ層の形成にはN
26 at%を含有するArとN2との混合ガスを用い
、ガス圧15 mTorr %投入パワー1.9vil
a41基板温度300℃とした。In addition, the sputtering conditions are as follows: to form an iron-silicon alloy layer, an Ar gas atmosphere is used, and an Ar pressure of 15 mTorr is used.
, input power 12 w7'ct/i s substrate temperature 300
℃, and N was used to form the 5ixNy-Nb-niobium nitride layer.
Using a mixed gas of Ar and N2 containing 26 at%, the gas pressure was 15 mTorr and the input power was 1.9 vil.
The a41 substrate temperature was 300°C.
第1図に、5ixNy−Nb−窒化ニオブ中間層に含1
れるNb量(at%)と、保磁力、透磁率との関係をグ
ラフで示す。これから、中間層に含1れるNb量が多く
なると透磁率が大きくなることがわかる。In Figure 1, the 5ixNy-Nb-niobium nitride intermediate layer contains 1
The graph shows the relationship between the amount of Nb (at%), coercive force, and magnetic permeability. From this, it can be seen that as the amount of Nb contained in the intermediate layer increases, the magnetic permeability increases.
実施例2゜
実施例2に釦いて、ArとN2との混合ガス中のN2の
割合をいろいろ変えた以外は、実施例1と同様にして多
層膜を形成した。Example 2 A multilayer film was formed in the same manner as in Example 1 except that the ratio of N2 in the mixed gas of Ar and N2 was varied.
第2図に、5ixNy−Nb−窒化ニオブ層作戒時の混
合ガス中におけるN2の含有量(at%)と保磁力、透
磁率との関係をグラフで示す。FIG. 2 is a graph showing the relationship between the content of N2 (at%) in the mixed gas, coercive force, and magnetic permeability when forming a 5ixNy-Nb-niobium nitride layer.
これから、混合ガス中に釦けるN2含有量が多いと保磁
力、透磁率共向上することがわかる。From this, it can be seen that when the N2 content in the mixed gas is large, both the coercive force and the magnetic permeability are improved.
第3図には、Fe 5sssi 3.4/ Si3N4
多層膜及びFeg6.6 St 3.4 / SixN
y Nb−窒化ニオブ多層膜のそれぞれの熱処理温度
に対する保磁力の変化、第4図にはF’e966 Si
3.4/ Si3N4多層膜及びF’e96−6si3
.4/5ixNy−Nb−窒化ニオブ多層膜のそれぞれ
の熱処理温度に対する透磁率(μiac )の変化金石
す。In Fig. 3, Fe 5sssi 3.4/Si3N4
Multilayer film and Feg6.6 St 3.4/SixN
yNb-niobium nitride multilayer film with respect to each heat treatment temperature, Figure 4 shows the change in coercive force of F'e966Si
3.4/ Si3N4 multilayer film and F'e96-6si3
.. Changes in magnetic permeability (μiac) of the 4/5ixNy-Nb-niobium nitride multilayer film with respect to each heat treatment temperature.
これらより、中間層Si3N4層にNbを添加する事に
より1軟磁気特性の耐熱安定性が良好になる。From these results, by adding Nb to the intermediate Si3N4 layer, the heat resistance stability of the soft magnetic characteristics 1 becomes better.
実施例3゜
ケイ素3.4at%含有鉄−ケイ素合金ターゲット及び
二酸化ケイ素(Si02)ターゲット上にニオブの小片
を6.5at%の原子比で載置した複合ターゲットを用
い、RFマグネトロンスパッタ装置にて5oooe(エ
ルステッド)の磁場中で交互にスパッタリングを行い、
基板上に厚さ500Aの鉄−ケイ素磁性合金から成る磁
性層と厚さ40Aの5iOz−Nb−窒化ニオブから成
る中間層が交互に15層積層された総膜厚約0.8μm
の多層膜を形成した。基板には板厚1.11mの結晶化
ガラス(商品名フォトセラム)を用いた。Example 3 Using an iron-silicon alloy target containing 3.4 at% silicon and a composite target in which small pieces of niobium were placed on a silicon dioxide (Si02) target at an atomic ratio of 6.5 at%, an RF magnetron sputtering device was used. Sputtering is performed alternately in a magnetic field of 5oooe (Oersted),
A total film thickness of about 0.8 μm in which 15 magnetic layers made of iron-silicon magnetic alloy with a thickness of 500 A and intermediate layers made of 5iOz-Nb-niobium nitride with a thickness of 40 A are alternately laminated on a substrate.
A multilayer film was formed. A crystallized glass (trade name: Photoceram) with a thickness of 1.11 m was used as the substrate.
また、スパッタリングの条件は、鉄−ケイ素合金層の形
成にはArガス雰囲気下で、Ar圧15mTorr、投
入パワーs、 2 w/cfIs 基板温度300℃と
し、5iOz−Nb−窒化ニオブ層の形成には、N26
at%を含有するArとN2との混合ガスを用い、ガス
圧15 mTo r rs投入パワー1.9 vi/c
A s基板温度300℃とした。In addition, the sputtering conditions were as follows: to form an iron-silicon alloy layer, an Ar gas atmosphere was used, an Ar pressure of 15 mTorr, an input power of s, a substrate temperature of 300°C, and a substrate temperature of 300°C to form a 5iOz-Nb-niobium nitride layer. is N26
Using a mixed gas of Ar and N2 containing at%, the gas pressure was 15 mTorr, and the input power was 1.9 vi/c.
As substrate temperature was set at 300°C.
第5図には、F e g6.6 S i 3−4 /
S i Oz多層膜及びFe964 Si 3.4/
5iOz−Nb−窒化ニオブ多層膜のそれぞれの熱処理
温度に対する保磁力(Hc)の変化、第6図には、Fe
96−6Si3−4/5iOZ多層膜及びFeg6−a
5ia−n/5iOz−Nb−窒化=、1−ブ多層膜
のそれぞれの熱処理温度に対する透磁率(μiac )
の変化を示す。これらよシ、中間層5iOz層にNbを
添加する事により1軟磁気特性の耐熱安定性が良好にな
る。In FIG. 5, F e g6.6 S i 3-4 /
S i Oz multilayer film and Fe964 Si 3.4/
Figure 6 shows the change in coercive force (Hc) with respect to the heat treatment temperature of the 5iOz-Nb-niobium nitride multilayer film.
96-6Si3-4/5iOZ multilayer film and Feg6-a
5ia-n/5iOz-Nb-Nitride = 1-Magnetic permeability (μiac) of multilayer film for each heat treatment temperature
shows the change in In addition to these, by adding Nb to the intermediate layer 5iOz layer, the heat resistance stability of the soft magnetic characteristics 1 becomes better.
第1図は本発明の多層状強磁性体の1例の保磁力、透磁
率と中間層に含壕れるNb含有量との関係を示すグラフ
、第2図は本発明の多層状強磁性体の1例の保磁力、透
磁率と中間層作成時の混合ガス中に釦けるN2含有量と
の関係を示すグラフ、第3図は本発明の多層状強磁性体
の1例の熱処理温度に対する保磁力の変化を示すグラフ
、第4図は本発明の多層状強磁性体の1例の熱処理温度
に対する透磁率の変化を示すグラフ、第5図は本発明の
多層状強磁性体の1例の熱処理温度に対する保磁力の変
化を示すグラフ、第6図は本発明の多層状強磁性体の1
例の熱処理温度に対する透磁率の変化を示すグラフであ
る。
中a1肩にさ1れろNb1(dj″A)置℃保砥刀、
!ai千乙の関係
混合ガス(Ai+A/z)中にお17るN2含満量(α
t”z、)錬処理温裏(’C)
憾処理温度(°C)
i!准雇に透磁率CpL直C)の変イし鴇処理温度(°
C)FIG. 1 is a graph showing the relationship between the coercive force and permeability of an example of the multilayer ferromagnetic material of the present invention and the Nb content contained in the intermediate layer. Figure 3 is a graph showing the relationship between the coercive force and permeability of an example of the N2 content in the mixed gas at the time of creating the intermediate layer. FIG. 4 is a graph showing changes in coercive force. FIG. 4 is a graph showing changes in magnetic permeability with respect to heat treatment temperature for an example of the multilayer ferromagnetic material of the present invention. FIG. 5 is an example of the multilayer ferromagnetic material of the present invention. FIG. 6 is a graph showing the change in coercive force with respect to the heat treatment temperature of the multilayer ferromagnetic material of the present invention.
It is a graph showing the change in magnetic permeability with respect to the heat treatment temperature in an example. Nb1 (dj''A) Place the whetstone on the shoulder of middle a1,
! The relationship between ai and 1000 is the N2 content (α) in the mixed gas (Ai+A/z).
t"z,) Refining treatment temperature ('C) Temperature treatment temperature (°C) i! Temperature treatment temperature (°C)
C)
Claims (1)
積層した多層膜において、非磁性中間層が(イ)ケイ素
の窒化物、酸化物の中から選ばれた少なくとも1種と(
口)Nbもしくは窒化ニオブのいずれか、種以上を含有
することを特徴とする多層状強磁性体。In a multilayer film in which iron-based ferromagnetic material layers and nonmagnetic intermediate layers are alternately laminated on a substrate, the nonmagnetic intermediate layer is (a) at least one selected from silicon nitrides and oxides. (
(1) A multilayer ferromagnetic material characterized by containing at least one species of either Nb or niobium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16872089A JPH0334406A (en) | 1989-06-30 | 1989-06-30 | Multilayer type ferromagnetic substance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16872089A JPH0334406A (en) | 1989-06-30 | 1989-06-30 | Multilayer type ferromagnetic substance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0334406A true JPH0334406A (en) | 1991-02-14 |
Family
ID=15873193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16872089A Pending JPH0334406A (en) | 1989-06-30 | 1989-06-30 | Multilayer type ferromagnetic substance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0334406A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04214205A (en) * | 1990-12-12 | 1992-08-05 | Fuji Electric Co Ltd | Thin-film magnetic head and its production |
-
1989
- 1989-06-30 JP JP16872089A patent/JPH0334406A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04214205A (en) * | 1990-12-12 | 1992-08-05 | Fuji Electric Co Ltd | Thin-film magnetic head and its production |
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