JPH0335031A - 防曇性付与法 - Google Patents

防曇性付与法

Info

Publication number: JPH0335031A
Authority: JP; Japan
Prior art keywords: low; plasma treatment; temperature plasma; organosilicon compound; group
Prior art date: 1989-06-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP1168470A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0555539B2 (fr

Inventor

Akifumi Nishikawa

昭文西川

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

FUKUI PREF GOV

Original Assignee

FUKUI PREF GOV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-06-30

Filing date

1989-06-30

Publication date

1991-02-15

1989-06-30 Application filed by FUKUI PREF GOV filed Critical FUKUI PREF GOV

1989-06-30 Priority to JP1168470A priority Critical patent/JPH0335031A/ja

1991-02-15 Publication of JPH0335031A publication Critical patent/JPH0335031A/ja

1993-08-17 Publication of JPH0555539B2 publication Critical patent/JPH0555539B2/ja

Status Granted legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims description 22
239000000463 material Substances 0.000 claims abstract description 45
238000009832 plasma treatment Methods 0.000 claims abstract description 20
229920003023 plastic Polymers 0.000 claims abstract description 17
150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 15
239000011521 glass Substances 0.000 claims abstract description 14
239000011248 coating agent Substances 0.000 claims abstract description 13
239000007789 gas Substances 0.000 claims abstract description 13
238000000576 coating method Methods 0.000 claims abstract description 12
-1 methacryloxy Chemical group 0.000 claims abstract description 7
229920000642 polymer Polymers 0.000 claims abstract description 7
239000000178 monomer Substances 0.000 claims abstract description 6
125000001183 hydrocarbyl group Chemical group 0.000 claims abstract 4
125000004183 alkoxy alkyl group Chemical group 0.000 claims abstract 2
125000000962 organic group Chemical group 0.000 claims abstract 2
125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract 2
125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
239000000126 substance Substances 0.000 claims description 2
125000004432 carbon atom Chemical group C* 0.000 claims 3
125000003700 epoxy group Chemical group 0.000 claims 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 12
238000005299 abrasion Methods 0.000 abstract description 5
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
229910001882 dioxygen Inorganic materials 0.000 abstract description 2
239000004215 Carbon black (E152) Substances 0.000 abstract 2
229930195733 hydrocarbon Natural products 0.000 abstract 2
150000002430 hydrocarbons Chemical class 0.000 abstract 2
239000004593 Epoxy Substances 0.000 abstract 1
150000001875 compounds Chemical class 0.000 abstract 1
229920002554 vinyl polymer Polymers 0.000 abstract 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
239000010408 film Substances 0.000 description 14
229910052814 silicon oxide Inorganic materials 0.000 description 10
238000012545 processing Methods 0.000 description 9
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
230000000694 effects Effects 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
238000001771 vacuum deposition Methods 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
239000004372 Polyvinyl alcohol Substances 0.000 description 2
RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
229910052681 coesite Inorganic materials 0.000 description 2
229910052906 cristobalite Inorganic materials 0.000 description 2
230000007423 decrease Effects 0.000 description 2
238000011156 evaluation Methods 0.000 description 2
229920002451 polyvinyl alcohol Polymers 0.000 description 2
239000011347 resin Substances 0.000 description 2
229920005989 resin Polymers 0.000 description 2
150000003839 salts Chemical class 0.000 description 2
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
229910052682 stishovite Inorganic materials 0.000 description 2
230000009182 swimming Effects 0.000 description 2
229910052905 tridymite Inorganic materials 0.000 description 2
MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
230000003213 activating effect Effects 0.000 description 1
239000003570 air Substances 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000001569 carbon dioxide Substances 0.000 description 1
229910002092 carbon dioxide Inorganic materials 0.000 description 1
229910002090 carbon oxide Inorganic materials 0.000 description 1
239000000460 chlorine Substances 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
238000009833 condensation Methods 0.000 description 1
230000005494 condensation Effects 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000012937 correction Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
QFLLWLFOOHGSBE-UHFFFAOYSA-N dichloro-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(Cl)Cl QFLLWLFOOHGSBE-UHFFFAOYSA-N 0.000 description 1
JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
239000004205 dimethyl polysiloxane Substances 0.000 description 1
238000004070 electrodeposition Methods 0.000 description 1
FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 1
WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
238000007306 functionalization reaction Methods 0.000 description 1
239000010931 gold Substances 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
239000007788 liquid Substances 0.000 description 1
239000002075 main ingredient Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052754 neon Inorganic materials 0.000 description 1
GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
239000001272 nitrous oxide Substances 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
239000003973 paint Substances 0.000 description 1
229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
238000003672 processing method Methods 0.000 description 1
239000002994 raw material Substances 0.000 description 1
238000011160 research Methods 0.000 description 1
150000003377 silicon compounds Chemical class 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000002210 silicon-based material Substances 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
238000005211 surface analysis Methods 0.000 description 1
230000035900 sweating Effects 0.000 description 1
230000009897 systematic effect Effects 0.000 description 1
239000010409 thin film Substances 0.000 description 1
DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
238000007738 vacuum evaporation Methods 0.000 description 1
238000005406 washing Methods 0.000 description 1

Landscapes

Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
Treatments Of Macromolecular Shaped Articles (AREA)
Laminated Bodies (AREA)
Surface Treatment Of Glass (AREA)

JP1168470A 1989-06-30 1989-06-30 防曇性付与法 Granted JPH0335031A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP1168470A JPH0335031A (ja)	1989-06-30	1989-06-30	防曇性付与法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP1168470A JPH0335031A (ja)	1989-06-30	1989-06-30	防曇性付与法

Publications (2)

Publication Number	Publication Date
JPH0335031A true JPH0335031A (ja)	1991-02-15
JPH0555539B2 JPH0555539B2 (fr)	1993-08-17

Family

ID=15868705

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP1168470A Granted JPH0335031A (ja)	1989-06-30	1989-06-30	防曇性付与法

Country Status (1)

Country	Link
JP (1)	JPH0335031A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH03217434A (ja) *	1990-01-22	1991-09-25	Mitsubishi Heavy Ind Ltd	プラスチックの表面硬化方法
EP0758629A1 (fr) *	1995-07-14	1997-02-19	Canon Kabushiki Kaisha	Procédé de traitement d'une base pour sélectivement donner des caractéristiques hydrofuges, élément protégeant contre la lumière formé sur un substrat et procédé de production d'un filtre couleur pour un dispositif d'image
WO2012002150A1 (fr) *	2010-07-01	2012-01-05	コニカミノルタホールディングス株式会社	Film barrière aux gaz, et son procédé de fabrication

1989
- 1989-06-30 JP JP1168470A patent/JPH0335031A/ja active Granted

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH03217434A (ja) *	1990-01-22	1991-09-25	Mitsubishi Heavy Ind Ltd	プラスチックの表面硬化方法
EP0758629A1 (fr) *	1995-07-14	1997-02-19	Canon Kabushiki Kaisha	Procédé de traitement d'une base pour sélectivement donner des caractéristiques hydrofuges, élément protégeant contre la lumière formé sur un substrat et procédé de production d'un filtre couleur pour un dispositif d'image
US6228435B1 (en)	1995-07-14	2001-05-08	Canon Kabushiki Kaisha	Process for treating base to selectively impart water repellency, light-shielding member formed substrate, and production process of color filter substrate for picture device
WO2012002150A1 (fr) *	2010-07-01	2012-01-05	コニカミノルタホールディングス株式会社	Film barrière aux gaz, et son procédé de fabrication

Also Published As

Publication number	Publication date
JPH0555539B2 (fr)	1993-08-17

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