JPH0336155U - - Google Patents

Info

Publication number
JPH0336155U
JPH0336155U JP9700389U JP9700389U JPH0336155U JP H0336155 U JPH0336155 U JP H0336155U JP 9700389 U JP9700389 U JP 9700389U JP 9700389 U JP9700389 U JP 9700389U JP H0336155 U JPH0336155 U JP H0336155U
Authority
JP
Japan
Prior art keywords
conductive film
intrinsic amorphous
layer
metal layer
amorphous semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9700389U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9700389U priority Critical patent/JPH0336155U/ja
Publication of JPH0336155U publication Critical patent/JPH0336155U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Description

【図面の簡単な説明】
第１図ないし第５図は本考案の光起電力素子の
実施例を示し、第１図ないし第４図は１実施例を
示し、第１図は概略図、第２図は分先感度特性図
、第３図ａ，ｂは各材料に対する短絡光電流密度
の関係説明図、第４図ａ，ｂは各材料に対する開
放電圧の関係説明図、第５図は他の実施例の概略
図、第６図ないし第８図はそれぞれ従来例の概略
図である。 ９……ガラス基板、１０……透明導電膜、１１
……ｉ層、１２……金属電極。

Claims (1)

  1. 【実用新案登録請求の範囲】 バリヤ金属層と半導体層とを接触した構造のシ
    ヨツトキバリア型の光起電力素子であつて、 透明基板上に前記バリア金属層として形成され
    た透明導電膜と、 前記透明導電膜上に前記半導体層として形成さ
    れた真性アモルフアス半導体膜と、 前記真性ア
    モルフアス半導体膜上に形成された金属電極と を備えた光起電力素子。
JP9700389U 1989-08-19 1989-08-19 Pending JPH0336155U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9700389U JPH0336155U (ja) 1989-08-19 1989-08-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9700389U JPH0336155U (ja) 1989-08-19 1989-08-19

Publications (1)

Publication Number Publication Date
JPH0336155U true JPH0336155U (ja) 1991-04-09

Family

ID=31646166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9700389U Pending JPH0336155U (ja) 1989-08-19 1989-08-19

Country Status (1)

Country Link
JP (1) JPH0336155U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011111821A1 (ja) 2010-03-12 2011-09-15 シャープ株式会社 光発電素子および多接合薄膜太陽電池

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151476A (ja) * 1983-02-18 1984-08-29 Fuji Xerox Co Ltd 光電変換素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151476A (ja) * 1983-02-18 1984-08-29 Fuji Xerox Co Ltd 光電変換素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011111821A1 (ja) 2010-03-12 2011-09-15 シャープ株式会社 光発電素子および多接合薄膜太陽電池

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