JPH0336790A - Baking of multilayer aluminum nitride circuit board - Google Patents

Baking of multilayer aluminum nitride circuit board

Info

Publication number
JPH0336790A
JPH0336790A JP17227289A JP17227289A JPH0336790A JP H0336790 A JPH0336790 A JP H0336790A JP 17227289 A JP17227289 A JP 17227289A JP 17227289 A JP17227289 A JP 17227289A JP H0336790 A JPH0336790 A JP H0336790A
Authority
JP
Japan
Prior art keywords
aluminum nitride
baking
firing
circuit board
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17227289A
Other languages
Japanese (ja)
Inventor
Mineharu Tsukada
峰春 塚田
Koji Omote
孝司 表
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17227289A priority Critical patent/JPH0336790A/en
Publication of JPH0336790A publication Critical patent/JPH0336790A/en
Pending legal-status Critical Current

Links

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

PURPOSE:To obtain an aluminum nitride multilayer circuit board having small conductor resistance by adding specific amount of Ca or Ca and Y baking assistants to aluminum nitride, setting a green sheet board in which W paste is interconnected in multilayers as a conductor material in a NB sealed vessel, and baking it. CONSTITUTION:0.5-10.0 pts.wt. of Ca or Ca and Y baking assistants are added to 100 pts.wt. of aluminum nitride, a green sheet board 4 in which W paste is laid out in multilayers as a conductor material is set in a BN sealed vessel 1, and baked at 1550-1750 deg.C. Thus, an aluminum nitride multilayer circuit board having high density, high thermal conductivity and low conductor resistance can be obtained.

Description

【発明の詳細な説明】[Detailed description of the invention]

[概要] 窒化アルミニウム基板の焼成方法に関し、導体抵抗の小
さい窒化アルミニウム多層配線基板の焼成方法を提供す
ることを目的とし、Ca系またはCa系とY系の焼結助
剤を、窒化アルミニウム100重量部に対して0.5か
ら10.0重量部添加するとともにWペーストを導体材
料として多層に配線したグリーンシート基板をBNの密
閉容器中にセットして1550℃以上1750℃以下の
温度で焼成するように構成する。 〔産業上の利用分野] °本発明は、高い熱伝導性とシリコンに近い熱膨張を有
することから、LSIパッケージや多層回路基板などの
材料として有望な窒化アルミニウム基板の焼成方法に関
する。 [従来の技術J 窒化アルミニウムはすぐれた熱伝導性を有するセラミッ
クスとして、注目されており、そのためこれまでにも、
窒化アルミニウム基板の焼成方法に関して、種々の方法
が考案されているが、これらは、中性又は還元性雰囲気
内で高温長時間グラフディト炉を用いて、焼成すること
により主に、熱伝導率化を狙った実験的な焼成方法であ
る。窒化アルミニウムを多層配線基板に使用するために
は導電ペーストの達成と窒化アルミニウムの焼成を同時
に行なわなければならない。従来の実験的焼成条件はこ
のような要請には合致していない。 〔発明が解決しようとする課題〕 従来の焼成条件では、窒化アルミニウムの焼結密度や熱
伝導率などの緒特性を劣化させることはないが、多層配
線基板として要求される他の特性、すなわち導体抵抗の
小さい窒化アルミニウム多層配線基板を得ることはでき
ない。 したがって、本発明は導体抵抗の小さい窒化アルミニウ
ム多層配線基板の焼成方法を提供することを目的とする
。 〔課題を解決するための手段〕 本発明の方法は、Ca系またはCa系とY系の焼結助剤
を、窒化アルミニウム100重量部に対して0.5から
10.0重量部添加するとともにWペーストを導体材料
として多層に配線したグリーンシート基板をBNの密閉
容器中にセットして1550℃以上1750℃以下の温
度で焼成することを特徴とする。 以下、本発明の詳細な説明する。 本発明者らは、これまでに種々の焼成方法を検討した結
果、焼成に使用する容器などの治具が、基板の焼結状態
に大きく影響することがわかった。 窒化アルミニウムのように高温で焼成する材料は、焼成
に使用する治具も、BN(窒化硼素)やグラフディトに
限られるが、グラファイト容器を用いて焼成した基板は
、著しい重量減少を示し、緻密化しないこと、−万BN
の容器で密閉して焼成する、緻密化が図られることが分
かった。 次に、焼7512温度は、従来より1800℃から19
00℃が好ましいとされているが、導体抵抗への影響を
検討した結果、焼成温度が1500℃から1750℃の
範囲で導体抵抗が小さくなることを見出した。しかしな
がら、窒化アルミニウムの焼結性を考慮すると、155
0℃以上の温度が必要であり、この温度以上でなければ
、例え長時間の焼成を行っても、窒化アルミニウムグリ
ーンシートは十分には緻密化しない、従って、1550
℃から1750℃の温度範囲が有効である。 導体材料としては、通常のWペーストを用いる。窒化ア
ルミニウム基板の焼結助剤は、大別して、Y(イツトリ
ウム)系化合物とCa(カルシウム)系化合物がある。 このうち、Y系は、液相の発生温度が高いため、本発明
のように、従来より低温で焼成する場合には、単独で用
いるのは好ましくない。従って、Ca系ないしCa系と
Y系の混合物を用いるのが良い。 焼結助剤の添加量は、窒化アルミニウム100重量部に
対して、0.5から10.0重量部の範囲であれば良い
、添加量が0.5部未満では焼結が不十分になり、10
.0重量部を越えると熱伝導率が低下する傾向になる。
[Summary] Regarding a method for firing an aluminum nitride substrate, the purpose is to provide a method for firing an aluminum nitride multilayer wiring board with low conductor resistance. A green sheet substrate with 0.5 to 10.0 parts by weight added to it and wired in multiple layers using W paste as a conductive material is set in a sealed BN container and fired at a temperature of 1550°C or higher and 1750°C or lower. Configure it as follows. [Industrial Application Field] The present invention relates to a method for firing an aluminum nitride substrate, which is promising as a material for LSI packages, multilayer circuit boards, etc. because it has high thermal conductivity and thermal expansion close to that of silicon. [Conventional technology J Aluminum nitride has attracted attention as a ceramic with excellent thermal conductivity, and for this reason, it has been
Various methods have been devised for firing aluminum nitride substrates, but these mainly involve increasing the thermal conductivity by firing in a high-temperature, long-time graphite furnace in a neutral or reducing atmosphere. This is an experimental firing method. In order to use aluminum nitride in a multilayer wiring board, it is necessary to prepare a conductive paste and sinter the aluminum nitride at the same time. Conventional experimental firing conditions do not meet these requirements. [Problems to be Solved by the Invention] Conventional firing conditions do not deteriorate the properties of aluminum nitride, such as sintered density and thermal conductivity, but other properties required for a multilayer wiring board, namely conductor It is not possible to obtain an aluminum nitride multilayer wiring board with low resistance. Therefore, an object of the present invention is to provide a method for firing an aluminum nitride multilayer wiring board with low conductor resistance. [Means for Solving the Problems] The method of the present invention includes adding 0.5 to 10.0 parts by weight of Ca-based or Ca-based and Y-based sintering aids to 100 parts by weight of aluminum nitride, and The method is characterized in that a green sheet substrate with multilayer wiring using W paste as a conductive material is set in a sealed BN container and fired at a temperature of 1550° C. or more and 1750° C. or less. The present invention will be explained in detail below. As a result of studying various firing methods, the present inventors have found that the jigs used for firing, such as a container, have a large effect on the sintered state of the substrate. For materials such as aluminum nitride, which are fired at high temperatures, the jigs used for firing are limited to BN (boron nitride) and graphite, but substrates fired using graphite containers show a significant weight reduction and are highly densified. What not to do - 10,000 BN
It was found that densification can be achieved by sealing and firing in a container. Next, the firing temperature of 7512 has been changed from 1800℃ to 19
Although it is said that 00°C is preferable, as a result of studying the influence on the conductor resistance, it was found that the conductor resistance becomes smaller when the firing temperature is in the range of 1500°C to 1750°C. However, considering the sinterability of aluminum nitride, 155
A temperature of 0°C or higher is required, and if the temperature is not higher than this temperature, the aluminum nitride green sheet will not be sufficiently densified even if it is fired for a long time.
A temperature range of 1750°C is useful. Ordinary W paste is used as the conductor material. Sintering aids for aluminum nitride substrates can be broadly classified into Y (yttrium) compounds and Ca (calcium) compounds. Among these, the Y type has a high liquid phase generation temperature, so it is not preferable to use it alone when firing at a lower temperature than conventionally as in the present invention. Therefore, it is preferable to use Ca-based material or a mixture of Ca-based material and Y-based material. The amount of the sintering aid added may range from 0.5 to 10.0 parts by weight per 100 parts by weight of aluminum nitride; if the amount added is less than 0.5 parts, sintering will be insufficient. , 10
.. If it exceeds 0 parts by weight, the thermal conductivity tends to decrease.

【作用】[Effect]

上述の方法によれば、緻密で、熱伝導率が高く、かつ導
体抵抗の小さい窒化アルミニウム多層配線基板を得るこ
とができる。 以下、実施例により本発明をさらに詳しく説明する。
According to the above method, it is possible to obtain an aluminum nitride multilayer wiring board that is dense, has high thermal conductivity, and has low conductor resistance. Hereinafter, the present invention will be explained in more detail with reference to Examples.

【実施例】【Example】

窒化アルミニウム粉末100重量部に、焼結助剤として
、炭酸カルシウムおよび酸化イツトリウムを、表1に示
すように添加し、さらに有機バインダ、可塑剤を加えて
ボールミルで混練した。 これをドクターブレードを用いてシート成形し、乾燥し
た後、100mm口に打ち抜いた。これらのグリーンシ
ートにWペーストをスクリーン印刷し、積層後、900
℃の窒素雰囲気中で4h脱脂した0次に、これらの基板
を第1図に示すBNの密閉容器中にセットした。 図中、lはBN製函(容器)、2はBN製蓋、3はBN
製基板支持台、4はWペーストをスクリーン印刷した窒
化アルミニウムグリーンシートの積層体である。これら
の全体(1〜4)は加熱炉内にセットし、炉の雰囲気を
窒素とし、表1に示す種々の条件で焼成し、基板の密度
、熱伝導率ならびに導体抵抗を測定した。この結果を同
様に表1に示す。 (以下余白) 特性の判定は次の基準で行なった。 ○:焼結密度99.0%以上、熱伝導率180 W/m
k、以上、導体抵抗20  mΩ/口以下 △:焼結密度97.0−99.0%、熱伝導率150−
180w/mk、導体抵抗20−30 raΩ/口×:
焼結密度97.0%、熱伝導率150 W/mk以下導
体抵抗30IllΩ/口以上 比較例1.2は焼成温度が高すぎる例であり、焼成時間
が長くても短かくても導体抵抗がすぐれない、比較例3
.4は低温で長時間焼成した例であり、焼結密度と熱伝
導率がすぐれない。 〔発明の効果〕 以上説明した様に、本発明によれば、窒化アルミニウム
の密度や熱伝導率などの諸特性を劣化することなく、導
体抵抗の小さい多層配線基板を得ることができる。
Calcium carbonate and yttrium oxide as sintering aids were added to 100 parts by weight of aluminum nitride powder as shown in Table 1, an organic binder and a plasticizer were added, and the mixture was kneaded in a ball mill. This was formed into a sheet using a doctor blade, dried, and then punched into a 100 mm opening. W paste was screen printed on these green sheets, and after lamination, 900
After degreasing for 4 hours in a nitrogen atmosphere at 0.degree. C., these substrates were set in a BN sealed container as shown in FIG. In the figure, l is a BN box (container), 2 is a BN lid, and 3 is a BN box.
The substrate support 4 is a laminate of aluminum nitride green sheets screen-printed with W paste. All of these (1 to 4) were set in a heating furnace, the atmosphere of the furnace was nitrogen, and fired under various conditions shown in Table 1, and the density, thermal conductivity, and conductor resistance of the substrate were measured. The results are also shown in Table 1. (Left below) Characteristics were evaluated based on the following criteria. ○: Sintered density 99.0% or more, thermal conductivity 180 W/m
k, or more, conductor resistance 20 mΩ/mouth or less△: sintered density 97.0-99.0%, thermal conductivity 150-
180w/mk, conductor resistance 20-30 raΩ/mouth x:
Sintered density: 97.0%, thermal conductivity: 150 W/mk or less Conductor resistance: 30 IllΩ/mouth or more Comparative example 1.2 is an example in which the firing temperature is too high, and the conductor resistance increases regardless of whether the firing time is long or short. Not excellent, comparative example 3
.. Sample No. 4 is an example in which the sintering was performed at a low temperature for a long time, and the sintered density and thermal conductivity were not excellent. [Effects of the Invention] As explained above, according to the present invention, a multilayer wiring board with low conductor resistance can be obtained without deteriorating various properties such as density and thermal conductivity of aluminum nitride.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明法で使用するBN容器を示す。 I−BN製函、2−BN製蓋、3−BN製支持台、 4−窒化アルミニウムグリーンシート積層体 FIG. 1 shows a BN container used in the method of the present invention. I-BN box, 2-BN lid, 3-BN support stand, 4-Aluminum nitride green sheet laminate

Claims (1)

【特許請求の範囲】[Claims] 1.窒化アルミニウム多層配線基板の焼成方法において
、Ca系またはCa系とY系の焼結助剤を、窒化アルミ
ニウム100重量部に対して0.5から10.0重量部
添加するとともにWペーストを導体材料として多層に配
線したグリーンシート基板をBNの密閉容器中にセット
して1550℃以上1750℃以下の温度で焼成するこ
とを特徴とする窒化アルミニウム多層配線基板の焼成方
法。
1. In a method for firing an aluminum nitride multilayer wiring board, 0.5 to 10.0 parts by weight of Ca-based or Ca-based and Y-based sintering aids are added to 100 parts by weight of aluminum nitride, and W paste is used as a conductive material. 1. A method for firing an aluminum nitride multilayer wiring board, which comprises setting a green sheet board with multilayer wiring in a sealed BN container and firing it at a temperature of 1550°C or higher and 1750°C or lower.
JP17227289A 1989-07-04 1989-07-04 Baking of multilayer aluminum nitride circuit board Pending JPH0336790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17227289A JPH0336790A (en) 1989-07-04 1989-07-04 Baking of multilayer aluminum nitride circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17227289A JPH0336790A (en) 1989-07-04 1989-07-04 Baking of multilayer aluminum nitride circuit board

Publications (1)

Publication Number Publication Date
JPH0336790A true JPH0336790A (en) 1991-02-18

Family

ID=15938836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17227289A Pending JPH0336790A (en) 1989-07-04 1989-07-04 Baking of multilayer aluminum nitride circuit board

Country Status (1)

Country Link
JP (1) JPH0336790A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253294A (en) * 1984-05-29 1985-12-13 日本電気株式会社 Multilayer ceramic board
JPS62100479A (en) * 1985-10-29 1987-05-09 電気化学工業株式会社 Manufacture of aluminum nitride sintered sheet
JPS63166764A (en) * 1986-12-26 1988-07-09 三菱電機株式会社 Manufacture of aluminum nitride sintered body

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253294A (en) * 1984-05-29 1985-12-13 日本電気株式会社 Multilayer ceramic board
JPS62100479A (en) * 1985-10-29 1987-05-09 電気化学工業株式会社 Manufacture of aluminum nitride sintered sheet
JPS63166764A (en) * 1986-12-26 1988-07-09 三菱電機株式会社 Manufacture of aluminum nitride sintered body

Similar Documents

Publication Publication Date Title
Huang et al. Effects of Y2O3 and yttrium aluminates as sintering additives on the thermal conductivity of AlN ceramic substrates
JP5872998B2 (en) Alumina sintered body, member comprising the same, and semiconductor manufacturing apparatus
Feng et al. Effect of AlN addition on phase formation in the LTCC with Al2O3/AlN biphasic ceramics based on BBSZ glass
CN114423723A (en) Method for manufacturing silicon nitride substrate
CN110372392A (en) A kind of sintering method of ceramic substrate
WO2022210517A1 (en) Aluminium nitride sintered body, production method for same, circuit board, and laminated substrate
US3935017A (en) High-alumina content compositions containing BaO-MgO-SiO2 glass and sintered ceramic articles made therefrom
JPH0336790A (en) Baking of multilayer aluminum nitride circuit board
CN1212288C (en) Aluminium nitride ceramic with high heat conductivity
JPH0881267A (en) Aluminum nitride sintered body, manufacturing method thereof, aluminum nitride circuit board, and manufacturing method thereof
JP2807429B2 (en) Aluminum nitride sintered body
JPH04285073A (en) Aluminum nitride-based substrate
JP2600778B2 (en) Low temperature sintering porcelain composition for multilayer substrate
JP2737187B2 (en) Processing method of ceramics
JPS63280488A (en) Circuit board
JP2026035008A (en) Silicon nitride plate and method for manufacturing silicon nitride plate
JP3316923B2 (en) Method for producing aluminum nitride sintered body having metallized layer
JPH02129055A (en) Production of ceramic green sheet
JPS6184036A (en) Heat-conductive aln ceramics substrate
JPS62252365A (en) Low temperature sintered ceramic composition for multilayer substrate
JPH03151688A (en) Manufacture of aluminum nitride wiring board
JPH0744323B2 (en) Superconducting ceramic substrate
JPH0881266A (en) Method for manufacturing aluminum nitride sintered body
JPH0233808A (en) Conductor paste composition
JPS62132762A (en) Ceramic composition