JPH0339966A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPH0339966A JPH0339966A JP8485190A JP8485190A JPH0339966A JP H0339966 A JPH0339966 A JP H0339966A JP 8485190 A JP8485190 A JP 8485190A JP 8485190 A JP8485190 A JP 8485190A JP H0339966 A JPH0339966 A JP H0339966A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrophotographic photoreceptor
- charge
- elements
- charge transport
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000843 powder Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 19
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 19
- 229920000592 inorganic polymer Polymers 0.000 claims abstract description 13
- 239000010936 titanium Substances 0.000 claims abstract description 7
- 230000007704 transition Effects 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 229910052718 tin Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 239000011701 zinc Substances 0.000 claims abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 108091008695 photoreceptors Proteins 0.000 claims description 68
- 150000001875 compounds Chemical class 0.000 claims description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 3
- 229910001849 group 12 element Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 150000004770 chalcogenides Chemical class 0.000 claims 1
- 239000012860 organic pigment Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 4
- 229920000642 polymer Polymers 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 109
- 230000032258 transport Effects 0.000 description 59
- 239000010408 film Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 239000011241 protective layer Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 239000011669 selenium Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052711 selenium Inorganic materials 0.000 description 8
- 238000003618 dip coating Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- -1 polyvinylcarbazole Chemical class 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910000410 antimony oxide Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- JVGPVVUTUMQJKL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl thiocyanate Chemical compound CCCCOCCOCCSC#N JVGPVVUTUMQJKL-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- PWEBUXCTKOWPCW-UHFFFAOYSA-N squaric acid Chemical class OC1=C(O)C(=O)C1=O PWEBUXCTKOWPCW-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 241000486661 Ceramica Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 125000006617 triphenylamine group Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、電子写真感光体、特に機能分離型感光層を有
する電子写真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an electrophotographic photoreceptor, particularly an electrophotographic photoreceptor having a functionally separated photosensitive layer.
(従来の技術)
従来、電子写真感光体の感光層として、光照射により電
荷担体を発生させる電荷発生層と、この電rrI担体を
効率的に移動させる電荷輸送層とに分離した、いわゆる
機能分離型感光体において、電荷輸送材料としては、有
機材料と無機材料の両者が使用されてきた。有機材料と
してはポリビニルカルバゾール等の高分子化合物を用い
たもの、或いはポリカーボネート等の高分子結着樹脂中
にピラゾリンやトリフェニルアミン類等の低分子化合物
を分散或いは溶解させたものがある。また、無機材料と
しては、セレン、セレン・テルル等のカルコゲナイド化
合物が代表的なものである。(Prior Art) Conventionally, the photosensitive layer of an electrophotographic photoreceptor has been separated into a charge generation layer that generates charge carriers upon irradiation with light and a charge transport layer that efficiently moves these charge carriers, so-called functional separation. Both organic and inorganic materials have been used as charge transport materials in photoreceptors. As the organic material, there are those using a high molecular compound such as polyvinylcarbazole, or those using a low molecular compound such as pyrazoline and triphenylamines dispersed or dissolved in a high molecular binder resin such as polycarbonate. Typical inorganic materials include selenium and chalcogenide compounds such as selenium/tellurium.
(発明が解決しようとする課題)
しかしながら、これ等の電荷輸送材料を用いた電子写真
感光体においては、帯電性、暗減衰、残留電位等の電気
的な繰り返し特性が不安定であったり、硬度或いは接着
性などの機械的強度が不足しているため、複写機内で傷
がついたり、剥れ易く、長期間安定した画像を形成する
ことが困難であり、その寿命は数千〜数万枚のコピー枚
数に制限されている。これ等の欠点を改善するために、
表面層や接着層などを設ける場合には、残留電位が増加
したり、感光体構成が複雑になることによって、電子写
真感光体の製造時に、欠陥の発生を1曽加させる等の問
題があった。(Problems to be Solved by the Invention) However, in electrophotographic photoreceptors using these charge transport materials, electrical repeatability characteristics such as chargeability, dark decay, and residual potential are unstable, and hardness and Or, because it lacks mechanical strength such as adhesion, it is easily scratched or peeled off in the copying machine, making it difficult to form stable images over a long period of time, and its lifespan is limited to several thousand to tens of thousands of copies. The number of copies is limited. In order to improve these shortcomings,
When providing a surface layer, an adhesive layer, etc., there are problems such as an increase in residual potential and a complicated structure of the photoreceptor, which increases the occurrence of defects during the production of electrophotographic photoreceptors. Ta.
また、有機系の電荷輸送材料を用いた電子写真感光体に
おいては、輸送性が十分でなく、特に、低温環境での電
位減衰が不良になるなどの問題や、高速複写操作には適
しないなどの問題があった。In addition, electrophotographic photoreceptors using organic charge transport materials do not have sufficient transport properties, and have problems such as poor potential decay, especially in low-temperature environments, and are not suitable for high-speed copying operations. There was a problem.
また、従来の電荷輸送材料を用いた電子写真感光体にお
いては、耐熱性や耐光性が十分でなく、結晶化したり低
分子化合物である電荷輸送材料が分解したりするため、
電子写真感光体を使用或いは保管する条件や環境を制限
したりする必要があった。In addition, electrophotographic photoreceptors using conventional charge transport materials do not have sufficient heat resistance or light resistance, and the charge transport materials, which are low molecular weight compounds, may crystallize or decompose.
It has been necessary to limit the conditions and environment in which electrophotographic photoreceptors are used or stored.
また、機能分離型構成にして、電荷輸送層を光導電層の
一部に設けた電子写真感光体は、一般に電荷発生層が薄
層になるため、吸収端近傍の光に対する吸収が減少し、
電荷発生層を通過する光が増加し、その結果として、特
に赤外レーザーを用いたプリンターでは、基板からの反
射光との多重反射による干渉縞の発生が避けられなかっ
た。In addition, in electrophotographic photoreceptors that have a functionally separated structure and have a charge transport layer as a part of the photoconductive layer, the charge generation layer is generally a thin layer, so absorption of light near the absorption edge is reduced.
The amount of light passing through the charge generation layer increases, and as a result, especially in printers using infrared lasers, interference fringes are unavoidable due to multiple reflections with light reflected from the substrate.
本発明は、従来の技術における上記のような問題点に鑑
みてなされたものである。The present invention has been made in view of the above-mentioned problems in the conventional technology.
したがって、本発明の目的は、新規な電荷輸送層を有す
る電子写真感光体を提供することにある。Therefore, an object of the present invention is to provide an electrophotographic photoreceptor having a novel charge transport layer.
即ち、接着性や機械的強度・硬度が高く、欠陥の少ない
電荷輸送層を有する高耐久性の電子写真感光体を提供す
ることにある。That is, the object of the present invention is to provide a highly durable electrophotographic photoreceptor having a charge transport layer with high adhesiveness, high mechanical strength and hardness, and few defects.
本発明の他の目的は、高感度で凡色性に富み、高帯電性
で暗減衰が少なく、また、露光後の残留電位の少ない電
子写真感光体を提供することにある。Another object of the present invention is to provide an electrophotographic photoreceptor that has high sensitivity, is rich in mediochromaticity, has high chargeability, has little dark decay, and has little residual potential after exposure.
本発明の更に他の目的は、赤外半導体レー・ザー等のコ
ヒーレント光を光源とするレーザープリンターでの干渉
縞の発生を防止した高画質の電子写真感光体を提供する
ことにある。Still another object of the present invention is to provide a high-quality electrophotographic photoreceptor that prevents the generation of interference fringes in a laser printer that uses coherent light such as an infrared semiconductor laser as a light source.
(課題を解決するための手段および作用)本発明者等は
、上記の目的を達成する電荷輸送材料について鋭意研究
を行った結果、主として無機高分子中に金属粉末又は導
電性金属酸化物粉末を分散させたものは、電荷発生層で
生成した光キャリアを効率よく基板側へ輸送し、優れた
電荷輸送機能を有すること、そして、この電荷輸送材料
を用いた機能分離型感光体が、物理的、化学的、機械的
、光学的に従来の電荷輸送材料を用いた感光体をはるか
に凌撹することを見出だし、本発明を完成するに至った
。(Means and effects for solving the problem) As a result of intensive research into charge transport materials that achieve the above objectives, the present inventors mainly incorporated metal powders or conductive metal oxide powders into inorganic polymers. The dispersed material efficiently transports the photocarriers generated in the charge generation layer to the substrate side, and has an excellent charge transport function.Functionally separated photoreceptors using this charge transport material have physical advantages. The present inventors have discovered that photoreceptors using conventional charge transport materials are chemically, mechanically, and optically superior to photoreceptors using conventional charge transport materials, and have completed the present invention.
従来、導電性微粉末を有機高分子化合物中に分散したも
のを表面保護層に用いた例があるが、このような表面保
護膜は、感光体最表面に設け、暗時に表面の電荷を感光
層の表面まで到達させ、保護層での電荷蓄積を少なくし
、感光体の残留電位を小さくすることが必要であり、こ
のような構成では、電荷輸送層のように、暗時の電位減
衰を少なくし、感光体として、十分な電荷を保つことは
できない。また、表面保護層の場合には、その膜厚は抵
抗との関係で決定され、例えば保護層の抵抗が高ければ
、膜厚は薄くせざるを得ない。Conventionally, conductive fine powder dispersed in an organic polymer compound has been used as a surface protective layer, but such a surface protective film is provided on the outermost surface of a photoreceptor and absorbs the charges on the surface in the dark. It is necessary to reach the surface of the layer, reduce charge accumulation in the protective layer, and reduce the residual potential of the photoreceptor. Otherwise, it cannot maintain sufficient charge as a photoreceptor. Further, in the case of a surface protective layer, the film thickness is determined in relation to the resistance; for example, if the resistance of the protective layer is high, the film thickness must be made thin.
本発明の電子写真感光体は、少なくとも支持体と電荷輸
送層と電荷発生層が順次積層してなり、該電荷輸送層が
金属粉末又は導電性の金属酸化物粉末を分散した無機高
分子化合物からなることを特徴とする。従来、低抵抗の
表面保護層として用いられてきたものが電荷輸送層とし
て機能することは驚くべきことである。The electrophotographic photoreceptor of the present invention has at least a support, a charge transport layer, and a charge generation layer laminated in sequence, and the charge transport layer is made of an inorganic polymer compound in which metal powder or conductive metal oxide powder is dispersed. It is characterized by becoming. It is surprising that what has conventionally been used as a low resistance surface protective layer functions as a charge transport layer.
本発明の電子写真感光体において、電荷輸送層の無機高
分子化合物に分散される金属粉末は、周期律表第1Ia
族元素、第IIb族元素、第IIIa族および遷移元素
から選択された元素、又はそれ等2種以上の元素の化合
物又は混合物よりなり、また、導電性の金属酸化物粉末
は、錫、亜鉛、アンチモン、チタンおよびインジウムか
ら選択された元素の酸化物、又はそれ等2種以上の元素
の複合酸化物又は以上の金属酸化物の混合物よりなるも
のが好ましく使用される。これらの導電性微粉末は、正
および負のいずれの電荷をも流すことができる両極性で
あり、これらを用いた電荷輸送層は両極性となる。In the electrophotographic photoreceptor of the present invention, the metal powder dispersed in the inorganic polymer compound of the charge transport layer is
The conductive metal oxide powder is made of an element selected from group elements, group IIb elements, group IIIa elements, and transition elements, or a compound or mixture of two or more of these elements. Oxides of elements selected from antimony, titanium, and indium, composite oxides of two or more of these elements, or mixtures of these metal oxides are preferably used. These conductive fine powders are bipolar, allowing both positive and negative charges to flow, and a charge transport layer using them is bipolar.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
第1図は、本発明の電子写真感光体の基本的層構成の一
例であって、支持体lの上に、電荷輸送層2及び電荷発
生層3が積層されている。第2図においては、支持体上
に中間層4が設けられ、また、表面に表面保護層5が設
けられている。FIG. 1 shows an example of the basic layer structure of the electrophotographic photoreceptor of the present invention, in which a charge transport layer 2 and a charge generation layer 3 are laminated on a support l. In FIG. 2, an intermediate layer 4 is provided on the support, and a surface protective layer 5 is provided on the surface.
本発明において、支持体としては、導電性支持体および
絶縁性支持体のいずれを用いてもよい。In the present invention, the support may be either a conductive support or an insulating support.
導電性支持体としては、アルミニウム、ステンレススチ
ール、ニッケル、クロム等の金属およびその合金があげ
られ、絶縁性支持体としてはポリエステル、ポリエチレ
ン、ポリカーボネート、ポリスチレン、ポリアミド、ポ
リイミド等の高分子フィルム又はシート、ガラス、セラ
ミック等があげられる。絶縁性支持体を用いる場合には
、少なくとも他の層と接触する面は、導電化処理を施し
であることが必要である、導電化処理は、上記金属の他
に、金、銀、銅等を蒸着、スパッター、イオンブレーテ
ィング法によって行うことができる。Examples of the conductive support include metals such as aluminum, stainless steel, nickel, and chromium, and alloys thereof; examples of the insulating support include polymer films or sheets such as polyester, polyethylene, polycarbonate, polystyrene, polyamide, and polyimide; Examples include glass and ceramic. When using an insulating support, it is necessary that at least the surface in contact with other layers be subjected to conductive treatment.In addition to the above metals, the conductive treatment may include gold, silver, copper, etc. This can be done by vapor deposition, sputtering, or ion blating methods.
本発明の電子写真感光体は、電磁波の!!<t all
を支持体側から行ってもよいし、支持体とは反対の側か
ら行ってもよい。支持体側から行う場合には、導電化処
理による金属層が、少なくとも照射される電磁波を透過
する厚さにすればよい。また、ITO等の透明導電膜を
使用することもできる。The electrophotographic photoreceptor of the present invention is capable of handling electromagnetic waves! ! <t all
This may be performed from the support side or from the side opposite to the support. When performing from the support side, the metal layer subjected to the conductivity treatment may have a thickness that allows at least the irradiated electromagnetic waves to pass through. Moreover, a transparent conductive film such as ITO can also be used.
本発明の電子写真感光体において支持体の上には電荷発
生層および電荷輸送層が形成される。基板上に電荷発生
層、電荷輸送層を順次積層する場合には、暗中で電荷保
持を有効に行うために電荷輸送層表面には、更に絶縁層
を設けることが必要となる。しかしながら、この場合、
電荷輸送層が電荷発生層の上に設けられるために、電荷
輸送層は、露光に用いられる電磁波(光)を十分に透過
させて下層の電荷発生層まで到達させるべく十分に透明
でなくてはならず、電荷輸送層に用いる分散材料、膜厚
等を考慮しなくてはならない。本発明では電荷発生層が
上にあるため、特に透明性を考慮する必要はなく、材料
の選択、膜厚等において有利である。In the electrophotographic photoreceptor of the present invention, a charge generation layer and a charge transport layer are formed on the support. When a charge generation layer and a charge transport layer are sequentially laminated on a substrate, it is necessary to further provide an insulating layer on the surface of the charge transport layer in order to effectively retain charges in the dark. However, in this case,
Since the charge transport layer is provided on the charge generation layer, the charge transport layer must be sufficiently transparent to allow electromagnetic waves (light) used for exposure to sufficiently pass through and reach the charge generation layer below. However, the dispersion material used for the charge transport layer, film thickness, etc. must be considered. In the present invention, since the charge generation layer is on top, there is no need to particularly consider transparency, which is advantageous in terms of material selection, film thickness, etc.
本発明において、上記支持体と電荷発生層又は電荷輸送
層との間には、電荷注入阻IL:、、接着性向上を目的
として、中間層を設けてもよい。In the present invention, an intermediate layer may be provided between the support and the charge generation layer or the charge transport layer for the purpose of inhibiting charge injection and improving adhesion.
中間層は、ポリアミド、ポリイミド、ポリエステル等の
有機高分子化合物、或いはケイ素、チタン、ジルコニウ
ム等のアルコキシ化合物の溶it&ヲ塗布し、乾燥して
形成することができる。また、プラズマCVD法による
stN、、sic、、S iOx膜、イオンブレーティ
ング等のPVD法によるSiOx、AlOx、Zn0x
、ZrOx膜等を用いることができるほか、基板がAI
の場合には、陽極酸化処理を施して酸化アルミニウム層
を形成したものでもよい。The intermediate layer can be formed by melting and coating an organic polymer compound such as polyamide, polyimide, polyester, or an alkoxy compound such as silicon, titanium, zirconium, and the like, and drying it. We also provide stN, SIC, SiOx films by plasma CVD, and SiOx, AlOx, Zn0x by PVD such as ion blating.
, ZrOx film, etc. can be used, and the substrate can be
In this case, an aluminum oxide layer may be formed by anodizing.
電荷輸送層は、上記のごとく、無機高分子化合物中に、
金属粉末又は導電性の金属酸化物粉末を分散してなる。As mentioned above, the charge transport layer is made of an inorganic polymer compound,
It is made by dispersing metal powder or conductive metal oxide powder.
金属粉末としては、周期律表第Ua族元素、第IIb族
元素、第1IIa族元素および遷移金属から選択された
元素があ使用される。第na族元素としてはBe、 H
gs Ca、 Sr、Ba5Raがあげられ、第IIb
族元素としては、ZnSCdがあげられ、第IIIa族
元素としては^、、Ga、 In、 TIがあげられ、
遷移元素としては、主遷移元素であるScからCus
YからAg111f’から^Uの各元素、および内遷移
元素であるLaからL u s^CからL「の各元素が
あげられる。As the metal powder, an element selected from Group Ua elements, Group IIb elements, Group 1IIa elements, and transition metals of the periodic table is used. Group na elements include Be, H
gs Ca, Sr, Ba5Ra are mentioned, and IIb
Examples of group elements include ZnSCd, and examples of group IIIa elements include Ga, In, and TI.
As transition elements, from Sc, which is the main transition element, to Cu
Examples include each element from Y to Ag111f' to ^U, and each element from La to L u s^C to L', which are internal transition elements.
これ等の内でも、^、、Zn、 Inおよび主遷移元素
が好ましく使用できる。Among these, Z, Zn, In and the main transition elements can be preferably used.
また、導電性の金属酸化物粉末としては、錫、、亜鉛、
アンチモン、チタンおよびインジウムから選択された金
属の酸化物が使用される。金属酸化物は複合酸化物の形
状であってもよく、或いは2種以上の酸化物の混合物で
あってもよい。In addition, examples of conductive metal oxide powder include tin, zinc,
Oxides of metals selected from antimony, titanium and indium are used. The metal oxide may be in the form of a composite oxide, or may be a mixture of two or more oxides.
これ等金属粉末又は導電性の金属酸化物粉末の粒径は、
電荷輸送層の膜厚よりも小さいことが必要であり、特に
電荷輸送層の膜厚のl/10以下であることが好ましく
、具体的には50入〜ないし5tl!a。The particle size of these metal powders or conductive metal oxide powders is
It needs to be smaller than the thickness of the charge transport layer, particularly preferably 1/10 or less of the thickness of the charge transport layer, specifically 50 to 5 tl! a.
好ましくは0.01−ないしI−の範囲のものが使用さ
れる。粒径が50入よりも小さくなると、電荷輸送機能
が低下し、5a以上になると膜の表面性が低下し、クリ
ーニング不良や解像度の低下を引き起こす。Preferably, those in the range of 0.01- to I- are used. When the particle size is smaller than 50 particles, the charge transport function is degraded, and when it is larger than 5a, the surface properties of the film are degraded, causing poor cleaning and a decrease in resolution.
無機高分子化合物としては、シリコーン樹脂や有機金屑
化合物から形成される無機高分子化合物が使用できる。As the inorganic polymer compound, an inorganic polymer compound formed from a silicone resin or an organic gold scrap compound can be used.
電荷輸送層を形成する場合、無機高分子化合物が例えば
、液状のシリコーン樹脂である場合には、その中に上記
金属粉末又は金属酸化物粉末を分散させ、分散液を塗布
し、乾燥すればよい。When forming the charge transport layer, if the inorganic polymer compound is, for example, a liquid silicone resin, the above-mentioned metal powder or metal oxide powder may be dispersed therein, and a dispersion liquid may be applied and dried. .
また、ゾル−ゲル法によって形成する場合には、次のよ
うにして形成することができる。Moreover, when forming by a sol-gel method, it can be formed as follows.
SL (OCH3) 4、S * (OC2H5)
4、Si (OC3H7)4、S i (OC4
Hg)4、AI (OCH3)3、AI (OC2
H5)3、A I (OC4H9) 3、T i
(OC3H7) 4、Zr (OC3H7)4、Ti
(OC3H7)4、Y (OC3H7) 3、Y(O
C4H9)3、Fe (OC2H5)3、Fe (OC
3H7)3、Fe (OC4H9)3、Nb (OCH
3)5、Nb (OC2H5)5、Nb (OC3H7
)5、Ta (OC3H7)5、Ta(OC4H9)4
、Ti (OC3H7)4、V (OC2H5)3、
V(OC4H9)3等のアルコキシド化合物や、アイロ
ン、トリス(アセチルアセトネート)、コバルト・ビス
(アセチルアセトネート)、ニッケル・ビス(アセチル
アセトネート)、銅・ビス(アセチルアセトネート)等
の有機金属錯体を、アルコール中に溶解し、撹拌しなが
ら加水分解する。反応によって精製したゾル液に上記金
属粉末又は金属酸化物粉末を分散させ、得られた分散液
をスプレー法、浸漬法によって基板上に塗布し、溶媒を
除去した後、50〜300℃で1〜24時間加熱乾燥す
ることによって、主として無機高分子化合物からなる電
荷輸送層を得ることができる。SL (OCH3) 4, S * (OC2H5)
4, Si (OC3H7) 4, Si (OC4
Hg)4, AI (OCH3)3, AI (OC2
H5) 3, A I (OC4H9) 3, T i
(OC3H7) 4, Zr (OC3H7) 4, Ti
(OC3H7) 4, Y (OC3H7) 3, Y(O
C4H9)3, Fe (OC2H5)3, Fe (OC
3H7)3, Fe (OC4H9)3, Nb (OCH
3) 5, Nb (OC2H5) 5, Nb (OC3H7
)5, Ta (OC3H7)5, Ta(OC4H9)4
, Ti (OC3H7)4, V (OC2H5)3,
Alkoxide compounds such as V(OC4H9)3, organic metals such as iron, tris (acetylacetonate), cobalt/bis(acetylacetonate), nickel/bis(acetylacetonate), copper/bis(acetylacetonate), etc. The complex is dissolved in alcohol and hydrolyzed with stirring. The above metal powder or metal oxide powder is dispersed in a sol liquid purified by reaction, the resulting dispersion is applied onto a substrate by a spray method or a dipping method, and after removing the solvent, it is heated at 50 to 300°C for 1 to 30 minutes. By heating and drying for 24 hours, a charge transport layer mainly composed of an inorganic polymer compound can be obtained.
電荷輸送層における金属又は金属酸化物粉末の無機高分
子化合物に対する割合は、粉末の粒径や固有抵抗、膜の
強度、膜厚等によって任意に決定することができるが、
通常重量比で2/98〜40/BOの範囲が望ましい。The ratio of the metal or metal oxide powder to the inorganic polymer compound in the charge transport layer can be arbitrarily determined depending on the particle size and resistivity of the powder, the strength of the film, the film thickness, etc.
Usually, the weight ratio is preferably in the range of 2/98 to 40/BO.
なお、金属又は金属酸化物粉末の割合が2重量%よりも
低くなると、電荷輸送機能が不足し、高い残留電位を示
し、また、40重量%よりも高くなると、帯電性が低下
し、感光体としての機能を果たすことができない。Note that if the proportion of metal or metal oxide powder is lower than 2% by weight, the charge transport function will be insufficient and a high residual potential will be exhibited, and if it is higher than 40% by weight, the charging property will decrease and the photoconductor unable to perform its functions.
電荷輸送層の膜厚は3〜100 us、好ましくは5〜
50副の範囲に設定される。The thickness of the charge transport layer is 3 to 100 us, preferably 5 to 100 us.
It is set to a range of 50 subdivisions.
本発明において、電荷輸送層は、暗中で電荷を保持する
ことができると共に、電磁波が照射されることによって
電荷発生層中に電荷が発生した場合には、速やかに電荷
を注入し、基板又は感光体表面に電荷を移動させること
ができる。本発明において電荷輸送層中には金属粉末又
は導電性の金属酸化物粉末が分散して存在するため、そ
れ等粉末によって明示のみ顕在化する所定の電路が形成
されていると考えられ、更に電荷輸送層と電荷発生層と
の界面で水平電荷移動が生じ、電路と電路間の界面に電
荷が残留することがなくなる。In the present invention, the charge transport layer is capable of retaining charges in the dark, and when charges are generated in the charge generation layer due to irradiation with electromagnetic waves, the charges are quickly injected and the charge is transferred to the substrate or photosensitive layer. It can transfer charges to the surface of the body. In the present invention, since metal powder or conductive metal oxide powder is dispersed in the charge transport layer, it is thought that a predetermined electric path is formed by these powders, which only becomes apparent. Horizontal charge movement occurs at the interface between the transport layer and the charge generation layer, and no charge remains at the interface between the electrical circuits.
また、本発明において、電荷輸送層は、正および負のい
ずれの電荷をも輸送することができるので、感光体をプ
ラス帯電させて、或いはマイナス帯電させて使用するこ
とができる。Further, in the present invention, since the charge transport layer can transport both positive and negative charges, the photoreceptor can be used with a positive charge or a negative charge.
さらにまた、機能分離型感光体における一!i)電性は
、膜厚の厚い電荷輸送層によって決まるため、本発明に
おける電荷輸送層の帯電性は約t5V/胴〜100 V
/−の範囲であることが必要である。また、本発明で用
いる電荷輸送層に基づいて得られる感光体の表面電位の
暗中と光照射時の比は、少なくとも2以上を示し、電子
写真プロセスに十分適用できる値である。Furthermore, one of the features of the functionally separated photoreceptor! i) Since the chargeability is determined by the thick charge transport layer, the chargeability of the charge transport layer in the present invention is about t5V/body ~ 100V
It is necessary to be in the range of /-. Furthermore, the ratio of the surface potential of the photoreceptor obtained based on the charge transport layer used in the present invention in the dark and in the case of light irradiation is at least 2, which is a value that is sufficiently applicable to electrophotographic processes.
本発明の高分子マトリックス中に、金属もしくは導電性
の金属酸化物微粉末を分散してなる電荷輸送層上には、
暗中で電荷保持を有効に行うために、少なくとも暗中に
おいて高抵抗を示す膜が必要であり、電荷発生層がこの
機能を果たしていると考えられる。しかしながら、電荷
保持能力を更に高め得るために支持体表面に必要に応じ
て絶縁層を設けてもよい。On the charge transport layer formed by dispersing metal or conductive metal oxide fine powder in the polymer matrix of the present invention,
In order to effectively retain charge in the dark, a film that exhibits high resistance at least in the dark is required, and it is thought that the charge generation layer fulfills this function. However, in order to further enhance the charge retention ability, an insulating layer may be provided on the surface of the support, if necessary.
電荷発生層としては、非晶質ケイ素、セレン、セレンひ
素、セレンテルル等の無機物をCVD。The charge generation layer is made of inorganic materials such as amorphous silicon, selenium, selenium arsenide, and selenium tellurium by CVD.
蒸着或いはスパッタリング等の方法を用いて形成したも
のが使用できる。また、フタロシアニン、Cuフタロシ
アニン、Alフタロシアニン、■フタロシアニン、スク
エアリン酸誘導体、メロシアニン、ビスアゾ染料などの
色素や顔料を蒸着或いは結着樹脂に分散したものを、浸
漬塗布、スブレコ塗布等の方法で薄膜としたものを用い
ることができる。A material formed using a method such as vapor deposition or sputtering can be used. In addition, dyes and pigments such as phthalocyanine, Cu phthalocyanine, Al phthalocyanine, ■ phthalocyanine, squaric acid derivatives, merocyanine, and bisazo dyes are vapor-deposited or dispersed in a binder resin, and then formed into thin films by methods such as dip coating and soubreco coating. can be used.
本発明では、電荷発生層を上層にするためSe。In the present invention, Se is used to form the charge generation layer as an upper layer.
5o−To等のセレン系電荷発生層、a−8l系電荷発
生層を用いた場合には、有機系の電荷発生H料を用いた
場合に比べ、耐擦性、耐摩耗性の点において有利であり
、特にa−S l系電荷発生層は、硬度が高く、最表面
層としては、極めて有利である。また、a−8I系膜は
上記の観点から表面層としても有効に使用できる。When a selenium-based charge generation layer such as 5o-To or an a-8L charge generation layer is used, it is advantageous in terms of abrasion resistance and abrasion resistance compared to when an organic charge generation H material is used. In particular, the a-S1 charge generation layer has high hardness and is extremely advantageous as the outermost layer. Further, from the above point of view, the a-8I film can be effectively used as a surface layer.
なかでも、水素化非晶質ケイ素、ゲルマニウムを添加し
た水素化非晶質ケイ素、水素化非晶質ゲルマニウムを用
いた場合には、優れた機械的、電気的特性を示す。特に
、ケイ素あるいはゲルマニウムを主成分とし、1〜40
原子%、特に5〜2o原子%の水素を含んだものが好ま
しい。Among these, when hydrogenated amorphous silicon, hydrogenated amorphous silicon added with germanium, and hydrogenated amorphous germanium are used, excellent mechanical and electrical properties are exhibited. In particular, silicon or germanium is the main component, and 1 to 40
It is preferable that the hydrogen content be 5 to 2 atomic %, especially 5 to 2 atomic %.
本発明の電荷輸送層は、正および負のいずれの電荷をも
暢送することができる両極性であるため、感光体の帯電
極性の観点からa−3l系電荷発生層は最適である。何
故ならば、a−9I膜は膜中に元素周期律表のV族元素
、■族元素の添加により、n型、iTM、p型の膜が容
易に形成でき、正帯電型の感光体が所望される場合には
、■族元素を添加したp型a−81電荷発生層とすれば
よく、負帯電型感光体が所望される場合には、V族元素
を添加するか、そのままでn型a−8i電荷発生層とす
ればよく、両極性の感光体が所望される場合には、微量
の■族元素を添加して、i型a−8I電荷発生層とする
ことで、容易に感光体の帯電極性を制御できるからであ
る。Since the charge transport layer of the present invention is bipolar and can transport both positive and negative charges, the a-3l charge generation layer is optimal from the viewpoint of charge polarity of the photoreceptor. This is because the a-9I film allows n-type, iTM, and p-type films to be easily formed by adding group V elements and group II elements of the periodic table of elements to the film, making it possible to form positively charged photoreceptors. If desired, a p-type A-81 charge generation layer may be added with a group I element, and if a negatively charged photoreceptor is desired, a group V element may be added or the n-type charge generation layer may be added as is. A type A-8I charge generation layer may be used, and if a bipolar photoreceptor is desired, a trace amount of Group Ⅰ element can be added to form an I type A-8I charge generation layer. This is because the charging polarity of the photoreceptor can be controlled.
以下、水素化非晶質ケイ素を電荷発生層として用いる場
合を例として説明する。Hereinafter, a case where hydrogenated amorphous silicon is used as a charge generation layer will be explained as an example.
非晶質ケイ素を主成分とする電荷発生層は、公知の方法
によって形成することができる。例えば、グロー放電分
解、スパッタリング法、イオンブレーティング法、真空
蒸着法等によって形成することができる。これ等の成膜
方法は、[1的に応じて適宜選択されるが、プラズマC
VD法によりシラン或いはシラン系ガスをグロー放電分
解する方法が好ましく、この方法によれば、膜中にl〜
40原子%の水素を含有した比較的抵抗が高く、かつ、
光感度も高い膜が形成され、電荷発生層としては好適な
特性を得ることができる。The charge generation layer containing amorphous silicon as a main component can be formed by a known method. For example, it can be formed by glow discharge decomposition, sputtering method, ion blating method, vacuum evaporation method, etc. These film forming methods are selected as appropriate depending on [1], but plasma C
It is preferable to decompose silane or silane-based gas by glow discharge using the VD method. According to this method, l~
Relatively high resistance containing 40 atomic % hydrogen, and
A film with high photosensitivity is formed, and characteristics suitable for a charge generation layer can be obtained.
以下、プラズマCVD法を例にあげて説明する。The following will explain the plasma CVD method as an example.
ケイ素を主成分とする電荷発生層を作成するための原料
気体としては、シラン、ジシランをはじめとするシラン
類があげられる、また、電荷発生層を形成する際に、必
要に応じて、水素、ヘリウム、アルゴン、ネオン等のキ
ャリアガスを用いることも可能である。これ等の原料ガ
ス中に、ジボラン(B2H6)、ホスフィン(P H3
)ガス等のドーパントガスを流入させ、膜中に硼素或い
は燐等の不純物を添加することもできる。また、光感度
の増加を目的として、ハロゲン原子、炭素原子、酸素原
子、窒素原子等を含有させてもよい。Examples of the raw material gas for creating a charge generation layer containing silicon as a main component include silanes such as silane and disilane.In addition, when forming the charge generation layer, hydrogen, It is also possible to use carrier gases such as helium, argon, neon, etc. These raw material gases contain diborane (B2H6), phosphine (PH3
) It is also possible to add impurities such as boron or phosphorus into the film by introducing a dopant gas such as gas. Further, for the purpose of increasing photosensitivity, halogen atoms, carbon atoms, oxygen atoms, nitrogen atoms, etc. may be contained.
更にまた、長波長域感度の増加を[i的として、ゲルマ
ニウム、錫等の元素を添加することも可能である。 電
荷発生層の膜厚は、0.1〜30uM1好ましくは0.
2〜IOμsの範囲に設定される。Furthermore, it is also possible to add elements such as germanium and tin to increase the sensitivity in the long wavelength range. The thickness of the charge generation layer is 0.1 to 30 μM, preferably 0.1 to 30 μM.
It is set in the range of 2 to IOμs.
本発明の電子写真感光体は、表面のコロナイオンによる
変質を防止するために、表面保護層を設けてもよい。表
面保護層を形成させるための材料としては、プラズマC
VD法による酸化ケイ素、炭化ケイ素、窒化ケイ素、ア
モルファスカーボン、イオンブレーティング法等による
酸化アルミナ、更に有機低分子化合物や導電性微粉末を
分散した透明有機高分子膜等があげられる。The electrophotographic photoreceptor of the present invention may be provided with a surface protective layer in order to prevent surface deterioration due to corona ions. As a material for forming the surface protective layer, plasma C
Examples include silicon oxide, silicon carbide, silicon nitride, amorphous carbon produced by the VD method, alumina oxide produced by the ion-blating method, and transparent organic polymer films in which organic low-molecular compounds and conductive fine powder are dispersed.
(実施例) 次に、本発明を実施例によって説明する。(Example) Next, the present invention will be explained by examples.
実施例1
アルミニウム平板上に、セラミカ1100 (株式会社
同板研究所製)80重量部に酸化錫と酸化アンチモンと
を同−粒子中に含有し、かつ、その粒子中の酸化アンチ
モンが10重量%の粉末20重量部を加え、ボールミル
を用いて100時間時間分散し、硬化剤を20重量部加
えて得られた塗布液を、浸漬塗布法により塗布し、15
0℃で5時間乾燥して、厚さ15m1の電荷輸送層を形
成した。この膜をXI)Sにて分析したところ、酸化ケ
イ素、酸化錫、酸化アンチモン以外は検出されなかった
。Example 1 On an aluminum flat plate, 80 parts by weight of Ceramica 1100 (manufactured by Doiban Kenkyujo Co., Ltd.) contained tin oxide and antimony oxide in the same particles, and antimony oxide in the particles was 10% by weight. 20 parts by weight of powder was added, dispersed for 100 hours using a ball mill, and 20 parts by weight of a curing agent was added, and the resulting coating solution was applied by dip coating method.
It was dried at 0° C. for 5 hours to form a charge transport layer with a thickness of 15 ml. When this film was analyzed using XI)S, no substances other than silicon oxide, tin oxide, and antimony oxide were detected.
この上に、下記組成よりなる電荷発生層および表面保護
層を順次積層して電子写真感光体を得た。Thereon, a charge generation layer and a surface protective layer having the following composition were successively laminated to obtain an electrophotographic photoreceptor.
電荷発生層(膜厚lμs)
スクエアリン酸誘導体 30重量部(1)
ポリエステル樹脂 70重量部(東洋
紡側製、Vylon−200)
K把抗表面保護層(膜厚27Z11)
酸化錫粉末 45fff量部ポ
リウレタン樹脂 48重足部(関西ペ
イント■製。Charge generation layer (film thickness 1 μs) Squaric acid derivative 30 parts by weight (1) Polyester resin 70 parts by weight (manufactured by Toyobo, Vylon-200) K-resistant surface protective layer (film thickness 27Z11) Tin oxide powder 45 fff parts Polyurethane Resin 48-layer foot (manufactured by Kansai Paint ■).
レタンクリアー)
硬化剤(レタン硬化剤) 7重量部iil
られた電子写真感光体の電子写真特性を、7.!Jべた
ところ、+8KVのコロトロンで(;シ電すると、・:
1)電電1立570Vを保P!j した。550niの
光で露光した後の残留電位は1.5Vであった。(Lethane clear) Hardening agent (Lethane hardening agent) 7 parts by weight IIL
7. The electrophotographic properties of the electrophotographic photoreceptor obtained by ! When I turned on the +8KV corotron (;shiden),...
1) Maintain 570V of electrical power! j I did. The residual potential after exposure to 550 ni light was 1.5V.
実施例2
実施例1の電荷発生層を、結晶セレン粉末を用いて形成
した以外は同様にして電子写真感光体を作製した。Example 2 An electrophotographic photoreceptor was produced in the same manner as in Example 1 except that the charge generation layer was formed using crystalline selenium powder.
電荷発生層は、下記組成からなる分散液を浸漬塗布する
ことによって形成した。The charge generation layer was formed by dip coating a dispersion having the following composition.
粒径0.05〜0.5a+の結晶セレン 70重量部
ポリビニルブヂラール 30重量部(積木化
学■製、聞−1)
ブチルアルコール 100重量部得られた
電子写真感光体の電子写真特性をaP1定したところ、
+6Kvのコロトロンで帯電すると、弔電電位470■
を保持した。500nn+の光で露光した後の残留電位
は20Vであった。また、光感度は、半減露光量で4エ
ルグ/ciであった。70 parts by weight of crystalline selenium with a particle size of 0.05 to 0.5a After setting,
When charged with a +6Kv corotron, the electric potential is 470■
was held. The residual potential after exposure to 500 nn+ light was 20V. Further, the photosensitivity was 4 ergs/ci at half exposure.
実施例3
円筒状アルミニウムパイプ上に、テトラエトキシシラン
50重量部、エチルアルコール30!1f、1部、水2
重量部よりなる混合物に酸化錫粉末10重量部を加え、
ボールミルで100時間分散して得られた塗布液を、浸
漬塗布法により繰り返し塗布して厚さ1OtI!Rの電
荷輸送層を形成した。Example 3 On a cylindrical aluminum pipe, 50 parts by weight of tetraethoxysilane, 30!1f of ethyl alcohol, 1 part, and 2 parts of water were placed on a cylindrical aluminum pipe.
Adding 10 parts by weight of tin oxide powder to a mixture consisting of parts by weight,
The coating solution obtained by dispersing in a ball mill for 100 hours was repeatedly coated using the dip coating method to a thickness of 10tI! A charge transport layer of R was formed.
この上に、プラズマ法により、次のようにしてアモルフ
ァスシリコンからなる電荷発生層および表面保護層を順
次積層して電子写真感光体を得た。A charge generation layer and a surface protective layer made of amorphous silicon were sequentially laminated thereon by a plasma method in the following manner to obtain an electrophotographic photoreceptor.
上記電荷輸送層のみが形成されたアルミニウムパイプを
、容量結合型プラズマCVD装置の真空槽内に設置した
。The aluminum pipe on which only the charge transport layer was formed was placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus.
基板温度200℃に維持し、反応室内にtoo%シラン
(SiH4)ガスを毎分100cc 、水素希釈の11
00ppジボランガスを毎分2cc流入させ、反応槽内
を0.5Torrの圧力に維持した後、1.3.85M
IIzの品周波電ノJを投入してグロー放電を坐じさせ
、電力をtoo wに維持した。このようにして水素と
ごく微量の硼素を含む高暗抵抗で、いわゆるi型非晶質
ケイ素からなるltmの電荷発生層を形成した。The substrate temperature was maintained at 200°C, too% silane (SiH4) gas was introduced into the reaction chamber at a rate of 100 cc/min, and hydrogen dilution was performed at 11
After 2cc of 00pp diborane gas was introduced per minute and the pressure inside the reaction tank was maintained at 0.5 Torr, 1.3.85M
I turned on the IIz Shinshu Denno J to let the glow discharge sit and maintain the power at too much. In this way, an ltm charge generation layer made of so-called i-type amorphous silicon and having a high dark resistance containing hydrogen and a very small amount of boron was formed.
引き続き、高真空に排気し、S i H430secm
、N H330sec+aを反応器に導入し、50Wで
放電を行い、0.1−のSIN、膜を形成し、厚さ約2
1即の感光層を有する電子写真感光体を作製した。Subsequently, evacuate to high vacuum and S i H430sec
, N H330sec+a was introduced into the reactor and discharged at 50W to form a film with a SIN of 0.1- and a thickness of about 2
An electrophotographic photoreceptor having a single photosensitive layer was prepared.
得られた電子写真感光体の電子写真特性を測定したとこ
ろ、+6KVのコロトロンで帯電すると、帯電電位40
0vを保持した。550na+の光で露光した後の残留
電位は15Vであった。When the electrophotographic properties of the obtained electrophotographic photoreceptor were measured, it was found that when charged with a +6KV corotron, the charging potential was 40
0v was maintained. The residual potential after exposure to 550 na+ light was 15V.
また、この感光体に−[iKVのコロトロンで帯電する
と、−430Vを保持した。550na+の光で露光す
ると、残留電位は−20Vであり、この感光体は両極性
であることが確認された。Further, when this photoreceptor was charged with a corotron of -[iKV, -430V was maintained. When exposed to 550 na+ light, the residual potential was -20 V, confirming that this photoreceptor was bipolar.
この電子写真感光体を用いて、通常の電子写真方式に従
い、正帯電、像露光、現像転写、クリーニング工程の繰
返により、10万枚の複写操作を行ったところ、良好な
画像が得られた。When this electrophotographic photoreceptor was used to copy 100,000 copies according to the usual electrophotographic method by repeating the steps of positive charging, image exposure, development and transfer, and cleaning, good images were obtained. .
実施例4
アルミニウム平板上に、セラミガロ00(株式会社日板
研究所製)60重量部に粒径0.1−0.5−の銅粉末
20重量部を加え、ボールミルを用いて100時間時間
分散し、硬化剤を20重量部加えて得られた塗布液を、
浸漬塗布法により塗布し、150℃で5時間乾燥して、
厚さi5−の電荷輸送層を形成した。Example 4 On an aluminum flat plate, 20 parts by weight of copper powder with a particle size of 0.1-0.5 was added to 60 parts by weight of Ceramigalo 00 (manufactured by Nippan Research Institute Co., Ltd.) and dispersed for 100 hours using a ball mill. Then, the coating solution obtained by adding 20 parts by weight of a curing agent,
Coated by dip coating method, dried at 150°C for 5 hours,
A charge transport layer having a thickness of i5- was formed.
この上に、実施例1と同し電荷発生層および表面保護層
を順次積層して電子写真感光体を得た。On top of this, a charge generation layer and a surface protective layer were sequentially laminated as in Example 1 to obtain an electrophotographic photoreceptor.
得られた電子写真感光体の電子写真特性を調べたところ
、+6KVのコロトロンで帯電すると、帯電電位450
vを保持した。550tnの光で露光した後の残留電位
は、20Vであった。When the electrophotographic properties of the obtained electrophotographic photoreceptor were investigated, it was found that when charged with a +6KV corotron, the charging potential was 450.
v was retained. The residual potential after exposure to 550 tn light was 20V.
実施例5
実施例4の電荷発生層を、結晶セレン粉末を用いて形成
した以外は同様にして電子写真感光体を作製した。Example 5 An electrophotographic photoreceptor was produced in the same manner as in Example 4 except that the charge generation layer was formed using crystalline selenium powder.
電荷発生層は、下記組成からなる分散液を浸漬塗布する
ことによって形成した。The charge generation layer was formed by dip coating a dispersion having the following composition.
粒径0.05〜0.5−の結晶セレン 70重量部ポ
リビニルブチラール 30重量部(積木化学
■製、13M−1)
ブチルアルコール 100重量部得られ
た電子写真感光体の電子写真特性を測定したところ、+
BKVのコロトロンで帯電すると、帯電電位500■を
保持した。500niの光で露光した後の残留電位はl
Ovであった。また、光感度は、半減露光量で4エルグ
/C−であった。70 parts by weight of crystalline selenium with a particle size of 0.05 to 0.5- parts by weight Polyvinyl butyral 30 parts by weight (manufactured by Tsukiki Kagaku ■, 13M-1) 100 parts by weight of butyl alcohol The electrophotographic characteristics of the obtained electrophotographic photoreceptor were measured. However, +
When charged with a BKV corotron, a charged potential of 500 μ was maintained. The residual potential after exposure with 500ni light is l
It was Ov. Further, the photosensitivity was 4 ergs/C- at half exposure.
実施例6
円筒状アルミニウムバイブ上に、テトラエトキシシラン
50重量部、エチルアルコール30重量部、水2重量部
よりなる混合物に、粒径0.1〜0.5−にNi粉末1
0重量部を加え、ボールミルで100時間分散して得ら
れた塗布液を、浸漬塗布法により繰り返し塗布して厚さ
10即の電荷輸送層を形成した。Example 6 A mixture of 50 parts by weight of tetraethoxysilane, 30 parts by weight of ethyl alcohol, and 2 parts by weight of water was placed on a cylindrical aluminum vibe, and 1 part of Ni powder with a particle size of 0.1 to 0.5 was added.
A coating solution obtained by adding 0 parts by weight and dispersing in a ball mill for 100 hours was repeatedly coated by a dip coating method to form a charge transport layer with a thickness of 10 cm.
この上に、プラズマCVD法により、次のようにしてア
モルファスシリコンからなる電荷発生層および表面保護
層を順次積層して電子写真感光体を得た。A charge generation layer and a surface protective layer made of amorphous silicon were sequentially laminated thereon by plasma CVD in the following manner to obtain an electrophotographic photoreceptor.
上記電荷輸送層のみが形成されたアルミニウムバイブを
、容量結合型プラズマCVD装置の真空槽内に設置した
。The aluminum vibrator on which only the charge transport layer was formed was placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus.
基板温度200℃に維持し、反応室内に100%シラン
(SiH4)ガスを毎分100cc 、水素希釈の11
00ppジボランガスを毎分2cc流入させ、反応槽内
を0.5Torrの圧力に維持した後、13.85M1
lzの高周波電力を投入してグロー放電を生じさせ、電
力を100 Wに維持した。このようにして水素とごく
微量の硼素を含む高暗抵抗で、いわゆるi型非晶質ケイ
素からなるl−の電荷発生層を形成した。The substrate temperature was maintained at 200°C, and 100% silane (SiH4) gas was supplied into the reaction chamber at a rate of 100 cc/min.
After introducing 2 cc of 00pp diborane gas per minute and maintaining the pressure inside the reaction tank at 0.5 Torr, 13.85M1
A glow discharge was generated by applying high frequency power of 1z, and the power was maintained at 100W. In this way, an l- charge generation layer made of so-called i-type amorphous silicon was formed with a high dark resistance containing hydrogen and a very small amount of boron.
引き続き、高真空に排気し、S i H430secm
、N H330sec+11を反応器に導入し、50W
で放電を行い、0.1−のSIN、膜を形成し、厚さ約
8μsの梠光層を有する電子写真感光体を作製した。Subsequently, evacuate to high vacuum and S i H430sec
, N H330sec+11 was introduced into the reactor, and 50W
A discharge was performed to form a film with a SIN of 0.1-, and an electrophotographic photoreceptor having a photoreceptor layer with a thickness of about 8 μs was produced.
得られた電子写真感光体の電子写真特性を測定したとこ
ろ、+6KVのコロトロンでシ1ン電すると、帯電電位
400Vを保持した。550回の光で露光した後の残留
電位は15Vであった。When the electrophotographic properties of the obtained electrophotographic photoreceptor were measured, it was found that when it was electrified with a +6 KV corotron, a charged potential of 400 V was maintained. The residual potential after 550 light exposures was 15V.
この電子写真感光体を用いて、通常の電子写真方式に従
い、正帯電、像露光、現像転写、クリーニング工程の繰
返により、lO万枚の複写操作を行ったところ、良好な
画像が得られた。When this electrophotographic photoreceptor was used to make 10,000 copies by repeating the steps of positive charging, image exposure, development and transfer, and cleaning according to the usual electrophotographic method, good images were obtained. .
実施例7
実施例4と同様にして作成された電荷輸送層の上に、プ
ラズマCVD法により、実施例6におけるシランガスの
代わりに、シランガスと水素希釈ゲルマンガスとをゲル
マン含有比が20%になるように混合した混合ガスを使
用した以外は、同一の条件で操作し、アモルファスシリ
コン・ゲルマニウム層を形成した。その上に、実施例6
と同様にして表面層を形成し、電子写真感光体を作製し
た。Example 7 On the charge transport layer created in the same manner as in Example 4, silane gas and hydrogen-diluted germane gas were added to the charge transport layer, in place of the silane gas in Example 6, using a plasma CVD method so that the germane content ratio was 20%. An amorphous silicon germanium layer was formed by operating under the same conditions except that a mixed gas mixed as described above was used. Moreover, Example 6
A surface layer was formed in the same manner as above to produce an electrophotographic photoreceptor.
この電子写真感光体を、780nmの半導体レーザーを
用いたプリンター(XP−9、富士ゼロックス■製)に
装着し、複写操作を行ったところ、モアレ模様のない鮮
明な画像が得られた。When this electrophotographic photoreceptor was attached to a printer (XP-9, manufactured by Fuji Xerox ■) using a 780 nm semiconductor laser and a copying operation was performed, a clear image without moire patterns was obtained.
この電子写真感光体の反射スペクトルを測定した結果、
反射スペクトルには干渉による反射光の強弱が見られず
、可視域のどの可干渉光に対しても干渉防止層として機
能を果たしていることが確認された。As a result of measuring the reflection spectrum of this electrophotographic photoreceptor,
The reflection spectrum showed no strength or weakness of the reflected light due to interference, confirming that it functions as an interference prevention layer for any coherent light in the visible range.
(発明の効果)
本発明の電子写真感光体は、上記のように電荷輸送層が
、金属粉末又は導電性金属酸化物粉末が分散された無機
高分子化合物よりなるから、従来の電荷輸送送層材料を
用いた場合に比べて、rrs荷の移動度が大きく、又耐
熱性に優れている。また、接着性や機械的強度・硬度が
高く、欠陥の少ないという利点を有する。したがって本
発明の電子写真感光体は、高耐久性、高感度で凡色性に
富み、高帯電性で暗減衰が少なく、また、露光後の残留
電位が少ないという効果を示す。(Effects of the Invention) As described above, in the electrophotographic photoreceptor of the present invention, the charge transport layer is made of an inorganic polymer compound in which metal powder or conductive metal oxide powder is dispersed. Compared to the case where RRS material is used, the mobility of the RRS load is large and the heat resistance is excellent. It also has the advantage of high adhesiveness, high mechanical strength and hardness, and fewer defects. Therefore, the electrophotographic photoreceptor of the present invention exhibits the following effects: high durability, high sensitivity, rich bichromaticity, high chargeability, low dark decay, and low residual potential after exposure.
また、本発明の電子写真感光体は、赤外半導体レーザー
等のコヒーレント光を光源とするものに使用でき、レー
ザープリンターでの干渉縞の発生を防+hした高画質の
画像を得ることができる。Further, the electrophotographic photoreceptor of the present invention can be used in a device that uses coherent light such as an infrared semiconductor laser as a light source, and can obtain high-quality images that are prevented from generating interference fringes in laser printers.
第1図は本発明の電子写真感光体の実施例の模式的断面
図、第2図は本発明の電子写真感光体の他の実施例の模
式的断面図である。
l・・・支持体、2・・・電荷輸送層、3・・・電n:
を発生層、4・・・中間層、5・・・表面保護層。FIG. 1 is a schematic sectional view of an embodiment of the electrophotographic photoreceptor of the present invention, and FIG. 2 is a schematic sectional view of another embodiment of the electrophotographic photoreceptor of the invention. 1... Support, 2... Charge transport layer, 3... Charge n:
generation layer, 4... intermediate layer, 5... surface protective layer.
Claims (6)
次積層してなり、該電荷輸送層が金属粉末又は導電性の
金属酸化物粉末を分散した無機高分子化合物からなるこ
とを特徴とする電子写真感光体。(1) At least a support, a charge transport layer, and a charge generation layer are sequentially laminated, and the charge transport layer is made of an inorganic polymer compound in which metal powder or conductive metal oxide powder is dispersed. Electrophotographic photoreceptor.
素、第IIIa族元素および遷移元素から選択された元素
、又はそれ等2種以上の元素の合金又は混合物よりなる
ことを特徴とする特許請求の範囲第1項に記載の電子写
真感光体。(2) The metal powder is made of an element selected from Group IIa elements, Group IIb elements, Group IIIa elements, and transition elements of the periodic table, or an alloy or mixture of two or more of these elements. An electrophotographic photoreceptor according to claim 1.
タンおよびインジウムから選択された元素の酸化物、又
はそれ等2種以上の元素の複合酸化物又は2種以上の金
属酸化物の混合物よりなることを特徴とする特許請求の
範囲第1項に記載の電子写真感光体。(3) The metal oxide powder is an oxide of an element selected from tin, zinc, antimony, titanium, and indium, or a composite oxide of two or more of these elements, or a mixture of two or more metal oxides. An electrophotographic photoreceptor according to claim 1, characterized in that the electrophotographic photoreceptor comprises:
ことを特徴とする特許請求の範囲第1項ないし第3項の
いずれかに記載の電子写真感光体。(4) The electrophotographic photoreceptor according to any one of claims 1 to 3, wherein the charge generation layer contains chalcogenide as a main component.
び/又はアモルファスゲルマニウムからなることを特徴
とする特許請求の範囲第1項ないし第3項のいずれかに
記載の電子写真感光体。(5) The electrophotographic photoreceptor according to any one of claims 1 to 3, wherein the charge generation layer is mainly made of amorphous silicon and/or amorphous germanium.
からなることを特徴とする特許請求の範囲第1項ないし
第3項のいずれかに記載の電子写真感光体。(6) The electrophotographic photoreceptor according to any one of claims 1 to 3, wherein the charge generation layer mainly consists of an organic dye or an organic pigment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2084851A JP2705273B2 (en) | 1989-04-01 | 1990-04-02 | Electrophotographic photoreceptor |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-80264 | 1989-04-01 | ||
| JP8026489 | 1989-04-01 | ||
| JP2084851A JP2705273B2 (en) | 1989-04-01 | 1990-04-02 | Electrophotographic photoreceptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0339966A true JPH0339966A (en) | 1991-02-20 |
| JP2705273B2 JP2705273B2 (en) | 1998-01-28 |
Family
ID=26421303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2084851A Expired - Fee Related JP2705273B2 (en) | 1989-04-01 | 1990-04-02 | Electrophotographic photoreceptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2705273B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6057849A (en) * | 1983-09-09 | 1985-04-03 | Toray Ind Inc | Electrophotographic sensitive body |
| JPH01113758A (en) * | 1987-10-27 | 1989-05-02 | Mita Ind Co Ltd | Organic photosensitive body |
-
1990
- 1990-04-02 JP JP2084851A patent/JP2705273B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6057849A (en) * | 1983-09-09 | 1985-04-03 | Toray Ind Inc | Electrophotographic sensitive body |
| JPH01113758A (en) * | 1987-10-27 | 1989-05-02 | Mita Ind Co Ltd | Organic photosensitive body |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2705273B2 (en) | 1998-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4634648A (en) | Electrophotographic imaging members with amorphous carbon | |
| JPS6055347A (en) | Photoconductive element | |
| US4749636A (en) | Photosensitive member with hydrogen-containing carbon layer | |
| JPS59223444A (en) | Electrophotographic sensitive body | |
| US4741982A (en) | Photosensitive member having undercoat layer of amorphous carbon | |
| JPH0572783A (en) | Electrophotographic sensitive material | |
| JPH0782240B2 (en) | Electrophotographic photoreceptor | |
| US4698288A (en) | Electrophotographic imaging members having a ground plane of hydrogenated amorphous silicon | |
| JPH0339966A (en) | Electrophotographic sensitive body | |
| US4758487A (en) | Electrostatographic imaging members with amorphous boron | |
| JP2754854B2 (en) | Electrophotographic photoreceptor | |
| JP2679366B2 (en) | Electrophotographic photoreceptor | |
| JP2595575B2 (en) | Manufacturing method of electrophotographic photoreceptor | |
| JPH0740138B2 (en) | Electrophotographic photoreceptor | |
| JPS61275852A (en) | Electrophotographic sensitive body | |
| KR0156562B1 (en) | Manufacturing method of electrophotographic photosensitive member | |
| JPS58194732A (en) | Forming method of amorphous silicon carbide layer | |
| JP2720448B2 (en) | Manufacturing method of electrophotographic photoreceptor | |
| US5153086A (en) | Electrophotographic photoreceptor with charge transport layer of silicon oxide, carbide or nitride and transition metal | |
| US5166018A (en) | Photosensitive member with hydrogen-containing carbon layer | |
| JPS61275856A (en) | Electrophotographic sensitive body | |
| JPH021302B2 (en) | ||
| KR910003982B1 (en) | Electrophotographic photoreceptor | |
| JPH01271759A (en) | Electrophotographic sensitive body | |
| EP0324039B1 (en) | Electrophotographic photoreceptor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |