JPH0341860U - - Google Patents
Info
- Publication number
- JPH0341860U JPH0341860U JP10340289U JP10340289U JPH0341860U JP H0341860 U JPH0341860 U JP H0341860U JP 10340289 U JP10340289 U JP 10340289U JP 10340289 U JP10340289 U JP 10340289U JP H0341860 U JPH0341860 U JP H0341860U
- Authority
- JP
- Japan
- Prior art keywords
- quartz ampoule
- single crystal
- quartz
- compound semiconductor
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003708 ampul Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims 1
- 230000000116 mitigating effect Effects 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図ａ，ｂは本考案の化合物半導体単結晶製
造装置の一実施例を示す要部断面図及び蓋部平面
図、第２図は第１図ａの要部拡大図、第３図は従
来装置の要部断面図である。
１……石英アンプル、５……高温炉、６……蒸
気圧制御炉、７……保護石英管、８……蓋部。
Figures 1a and b are a cross-sectional view of the main parts and a top view of the lid showing an embodiment of the compound semiconductor single crystal manufacturing apparatus of the present invention, Figure 2 is an enlarged view of the main parts of Figure 1a, and Figure 3 is a FIG. 2 is a sectional view of a main part of a conventional device. DESCRIPTION OF SYMBOLS 1... Quartz ampoule, 5... High temperature furnace, 6... Steam pressure control furnace, 7... Protective quartz tube, 8... Lid part.
Claims (1)
するボートを配置し、他端に揮発性元素を配して
両者を夫々高温炉及び蒸気圧制御炉により加熱し
前記融液の一端から固化させて化合物半導体単結
晶を成長させる化合物半導体単結晶製造装置にお
いて、前記石英アンプルの前記揮発性元素が配置
されている方の外側に、端末に開口面積が可変と
なる蓋部を備え、前記石英アンプルに放射される
輻射熱を緩和して該輻射熱による前記石英アンプ
ルの熱変形を阻止する保護石英管が外挿してある
ことを特徴とする化合物半導体単結晶製造装置。 A boat containing a compound semiconductor melt is placed at one end of the quartz ampule, a volatile element is placed at the other end, and both are heated in a high temperature furnace and a vapor pressure controlled furnace, respectively, and the melt is solidified from one end to form a compound. In a compound semiconductor single crystal manufacturing apparatus for growing a semiconductor single crystal, a lid portion with a variable opening area is provided at the end of the quartz ampoule on the outside of the side where the volatile element is arranged, and the quartz ampoule is provided with a lid portion having a variable opening area; 1. A compound semiconductor single crystal production apparatus characterized in that a protective quartz tube is fitted over the quartz ampoule for mitigating radiant heat and preventing thermal deformation of the quartz ampoule due to the radiant heat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10340289U JPH0341860U (en) | 1989-09-01 | 1989-09-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10340289U JPH0341860U (en) | 1989-09-01 | 1989-09-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0341860U true JPH0341860U (en) | 1991-04-22 |
Family
ID=31652243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10340289U Pending JPH0341860U (en) | 1989-09-01 | 1989-09-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0341860U (en) |
-
1989
- 1989-09-01 JP JP10340289U patent/JPH0341860U/ja active Pending