JPH0343734U - - Google Patents
Info
- Publication number
- JPH0343734U JPH0343734U JP10423989U JP10423989U JPH0343734U JP H0343734 U JPH0343734 U JP H0343734U JP 10423989 U JP10423989 U JP 10423989U JP 10423989 U JP10423989 U JP 10423989U JP H0343734 U JPH0343734 U JP H0343734U
- Authority
- JP
- Japan
- Prior art keywords
- cathode post
- electrode
- semiconductor
- cathode
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000008188 pellet Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 1
- 238000000605 extraction Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
Description
第１図は本考案をゲートターンオフサイリスタ
に適用した一実施例の構成を示す断面図、第２図
は同実施例に用いられるゲート集電電極を示す斜
視図、第３図は第１図のゲート集電電極部分を拡
大して示す部分拡大断面図、第４図は同実施例に
用いられる絶縁ガイドの変形例を説明するための
断面図、第５図は従来の半導体制御素子の構成を
示す断面図、第６図ａ，ｂは従来の異なる半導体
制御素子の構成を示す一部断面斜視図と部分拡大
断面図である。
１……半導体ペレツト、２……アノード電極、
３……ゲート電極、４……カソード電極、５……
ゲート集電電極、５ａ……接触片、６……熱緩衝
板、７……カソードポスト、８……凹部、９……
絶縁ガイド、９ａ，９ｂ……溝部、１０……リー
ド線、１１……リード引き出し溝、１２……アノ
ードポスト。
FIG. 1 is a sectional view showing the configuration of an embodiment in which the present invention is applied to a gate turn-off thyristor, FIG. 2 is a perspective view showing a gate current collector electrode used in the embodiment, and FIG. FIG. 4 is a partially enlarged cross-sectional view showing a gate current collector electrode portion; FIG. 4 is a cross-sectional view for explaining a modified example of the insulated guide used in the same embodiment; FIG. 5 is a cross-sectional view showing the configuration of a conventional semiconductor control element. The sectional views shown in FIGS. 6A and 6B are a partially sectional perspective view and a partially enlarged sectional view showing the configuration of a different conventional semiconductor control element. 1... Semiconductor pellet, 2... Anode electrode,
3... Gate electrode, 4... Cathode electrode, 5...
Gate collector electrode, 5a... contact piece, 6... thermal buffer plate, 7... cathode post, 8... recess, 9...
Insulated guide, 9a, 9b...Groove portion, 10...Lead wire, 11...Lead extraction groove, 12...Anode post.
Claims (1)
体ペレツトと、この半導体ペレツトの一端面に設
けられた主電極およびゲート電極と、この主電極
上に配設されるカソードポストと、このカソード
ポストに絶縁材を介して保持されカソードポスト
の押圧を受けて上記ゲート電極に複数の接触片で
加圧接触される板ばね状のゲート集電電極とを具
備したことを特徴とする半導体制御素子。 A semiconductor pellet with a multilayer structure consisting of alternately different semiconductor layers, a main electrode and a gate electrode provided on one end surface of this semiconductor pellet, a cathode post provided on this main electrode, and an insulating material on this cathode post. What is claimed is: 1. A semiconductor control element comprising: a plate spring-shaped gate current collector electrode which is held via a cathode post and is pressed into contact with the gate electrode by a plurality of contact pieces under pressure from a cathode post.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10423989U JPH0343734U (en) | 1989-09-05 | 1989-09-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10423989U JPH0343734U (en) | 1989-09-05 | 1989-09-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0343734U true JPH0343734U (en) | 1991-04-24 |
Family
ID=31653040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10423989U Pending JPH0343734U (en) | 1989-09-05 | 1989-09-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0343734U (en) |
-
1989
- 1989-09-05 JP JP10423989U patent/JPH0343734U/ja active Pending
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