JPH0347603B2 - - Google Patents

Info

Publication number
JPH0347603B2
JPH0347603B2 JP19842282A JP19842282A JPH0347603B2 JP H0347603 B2 JPH0347603 B2 JP H0347603B2 JP 19842282 A JP19842282 A JP 19842282A JP 19842282 A JP19842282 A JP 19842282A JP H0347603 B2 JPH0347603 B2 JP H0347603B2
Authority
JP
Japan
Prior art keywords
thin film
thickness
substrate
photosensitive substrate
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19842282A
Other languages
Japanese (ja)
Other versions
JPS5986916A (en
Inventor
Eiji Iegi
Atsushi Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP19842282A priority Critical patent/JPS5986916A/en
Publication of JPS5986916A publication Critical patent/JPS5986916A/en
Publication of JPH0347603B2 publication Critical patent/JPH0347603B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174Membranes

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Description

【発明の詳細な説明】 技術分野 本発明は誘電体基板上に圧電性薄膜を形成した
バルク波利用の複合圧電共振子に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a composite piezoelectric resonator that utilizes bulk waves and has a piezoelectric thin film formed on a dielectric substrate.

従来技術 圧電基板を使用したバルク波利用の共振子にお
いて、エネルギー閉じ込めのためには、振動部分
の圧電基板の板厚を他の部分の板厚よりも、ポア
ソン比の大小に応じて、厚くしたり、薄くしたり
すればよい。
Prior Art In a bulk wave resonator using a piezoelectric substrate, in order to trap energy, the thickness of the piezoelectric substrate in the vibrating part is made thicker than in other parts depending on the size of Poisson's ratio. You can make it thinner or thinner.

ところで、圧電基板の板厚を上記のように部分
的に厚くしたり薄くする加工は非常に困難で、こ
のため、従来より、電極の質量付加効果や圧電反
作用等を利用してエネルギー閉じ込めを行つてい
たが、板厚を変える場合に比較するとエネルギー
閉じ込め効果が不充分であつた。
By the way, it is extremely difficult to partially increase or decrease the thickness of a piezoelectric substrate as described above, and for this reason, energy confinement has traditionally been carried out using the mass addition effect of electrodes, piezoelectric reaction, etc. However, compared to the case where the plate thickness was changed, the energy trapping effect was insufficient.

一方、圧電共振子を高い周波数領域において使
用するためには、圧電基板の板厚を全面的に薄く
するか、振動部分の板厚を薄くすればよい。
On the other hand, in order to use a piezoelectric resonator in a high frequency range, it is sufficient to reduce the thickness of the piezoelectric substrate over the entire surface or to reduce the thickness of the vibrating portion.

しかしながら、圧電基板を全面的に薄くすると
破壊し易く、取扱いが困難になる。
However, if the piezoelectric substrate is made completely thin, it will be easily broken and difficult to handle.

このため、シリコン基板上に圧電性薄膜を形成
するとともに、この圧電性薄膜と対向するシリコ
ン基板の他面に異方性エツチング処理等で凹部を
形成したバルク波利用の高周波用圧電共振子も提
案されているが、SiO2をマスクとしたり、ボロ
ンドープ層等を必要とし、製造に非常に手間がか
かるという問題があつた。
For this reason, we have proposed a high-frequency piezoelectric resonator that uses bulk waves, in which a piezoelectric thin film is formed on a silicon substrate, and a recess is formed by anisotropic etching on the other side of the silicon substrate facing the piezoelectric thin film. However, the problem was that it required a SiO 2 mask, a boron-doped layer, etc., and was very time-consuming to manufacture.

発明の目的 本発明はバルク波利用の圧電共振子における上
記事情に鑑みてなされたものであつて、その目的
は、誘電体基板上に圧電性薄膜を形成してなるバ
ルク波利用の圧電共振子において、誘電体基板と
して無機質感光性基板を使用することにより、無
機質感光性基板に直接、露光および現像処理を施
し、圧電性薄膜と対向する部分の無機質感光性基
板の板厚を他の部分と異ならせる加工を容易に行
えるようにすることである。
Purpose of the Invention The present invention has been made in view of the above-mentioned circumstances regarding a piezoelectric resonator that utilizes bulk waves, and its object is to provide a piezoelectric resonator that utilizes bulk waves, which is formed by forming a piezoelectric thin film on a dielectric substrate. In this method, by using an inorganic photosensitive substrate as a dielectric substrate, the inorganic photosensitive substrate is directly exposed and developed, and the thickness of the inorganic photosensitive substrate in the part facing the piezoelectric thin film is made different from that in other parts. The purpose is to make it easy to process different parts.

発明の要旨 このため、本発明は、相対向する主面を夫々電
極を形成してなる圧電性薄膜を平板状の無機質感
光性基板の一方の主面に形成するとともに、上記
無機質感光性基板の他方の主面を露光および現像
処理して上記圧電性薄膜と対向する部分の無機質
感光性基板の板厚を他の部分と異ならせたことを
特徴としている。
SUMMARY OF THE INVENTION Therefore, the present invention provides a method for forming a piezoelectric thin film on one main surface of a flat inorganic-textured photosensitive substrate, the piezoelectric thin film having an electrode formed on each of the opposing main surfaces, and The other principal surface is exposed and developed to make the thickness of the inorganic photosensitive substrate at the portion facing the piezoelectric thin film different from that at other portions.

実施例 以下、添付図面を参照して本発明の実施例を説
明する。
Embodiments Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

第1図において、11は無機質感光性基板、1
2は該無機質感光性基板11の一方の主面11a
に形成した圧電性薄膜、13,14は該圧電性薄
膜12の相対向する両主面に夫々設けた電極であ
る。
In FIG. 1, 11 is an inorganic photosensitive substrate;
2 is one main surface 11a of the inorganic photosensitive substrate 11;
The piezoelectric thin films 13 and 14 formed on the piezoelectric thin film 12 are electrodes provided on both opposing main surfaces of the piezoelectric thin film 12, respectively.

上記無機質感光性基板11は、紫外線等を露光
するとその部分が変色し、変色部分が弗化水素酸
等の現像液に溶けやすくなる、一般に化学切削用
感光ガラスと呼ばれる感光性ガラス基板からな
る。上記化学切削用感光ガラスとしては、たとえ
ば、SiO2、Li2O、Na2O、K2O、Al2O3、AgCl、
CeO2のほかに、微量のAu、Ag、Cuを含み、光
等が照射されるとこれらが析出して化学的に溶け
やすくなるフオトセラム(商品名)と呼ばれるも
のを用いることができる。
The inorganic photosensitive substrate 11 is made of a photosensitive glass substrate, generally called photosensitive glass for chemical cutting, which changes color when exposed to ultraviolet rays or the like, and the discolored portion becomes easily soluble in a developer such as hydrofluoric acid. Examples of the photosensitive glass for chemical cutting include SiO 2 , Li 2 O, Na 2 O, K 2 O, Al 2 O 3 , AgCl,
In addition to CeO 2 , it is possible to use something called Photoceram (trade name), which contains trace amounts of Au, Ag, and Cu, and when irradiated with light, these precipitate and become chemically soluble.

一方、圧電性薄膜12はZnOもしくはAlN等の
圧電材料からなり、上記無機質感光性基板11の
一方の主面11a上に、スパツタリング、イオン
プレーテイング、CVD等の手法により形成して
いる。
On the other hand, the piezoelectric thin film 12 is made of a piezoelectric material such as ZnO or AlN, and is formed on one main surface 11a of the inorganic photosensitive substrate 11 by a method such as sputtering, ion plating, or CVD.

無機質感光性基板11には、その他方の主面1
1bを後述するようにして露光および現像処理し
て、上記主面11bから圧電性薄膜12に向つて
窪んだ凹部15を形成し、上記圧電性薄膜12の
下部の無機質感光性基板11の板厚を他の部分の
板厚よりも薄くしている。
The inorganic photosensitive substrate 11 has the other main surface 1
1b is exposed and developed as described below to form a concave portion 15 concave from the main surface 11b toward the piezoelectric thin film 12, and to reduce the thickness of the inorganic photosensitive substrate 11 below the piezoelectric thin film 12. The thickness of the plate is thinner than that of other parts.

上記凹部15は次のようにして形成することが
できる。
The recess 15 can be formed as follows.

先ず、第2図aに示すように、第1図の無機質
感光性基板11となる感光性ガラス基板21を用
意する。
First, as shown in FIG. 2a, a photosensitive glass substrate 21, which will become the inorganic photosensitive substrate 11 of FIG. 1, is prepared.

この感光性ガラス基板21の上記凹部15を形
成する部分に、第2図bに示すように、紫外線2
2を投射して露光を行えば、紫外線22が投射さ
れた部分23が変色する。
As shown in FIG.
When exposure is performed by projecting ultraviolet rays 22, the portion 23 onto which the ultraviolet rays 22 are projected changes color.

次いで、この感光性ガラス基板21を弗化水素
酸等の現像液に浸漬すれば、紫外線22が投射さ
れた上記部分23が溶解して、第2図cに示すよ
うに、凹部15が形成される。
Next, when this photosensitive glass substrate 21 is immersed in a developer such as hydrofluoric acid, the above-mentioned portion 23 onto which the ultraviolet rays 22 have been projected is dissolved, and a recess 15 is formed as shown in FIG. 2c. Ru.

上記凹部15の深さは、圧電性薄膜12の下部
の無機質感光性基板11の厚さが数ミクロンから
数10ミクロンとなるように設定することが好まし
い。
The depth of the recess 15 is preferably set so that the thickness of the inorganic photosensitive substrate 11 under the piezoelectric thin film 12 is from several microns to several tens of microns.

上記のように、無機質感光性基板11を使用す
れば、圧電性薄膜12の下部の無機質感光性基板
11の厚さを、露光と現像処理だけで容易に調整
できることが分る。
As described above, it can be seen that if the inorganic photosensitive substrate 11 is used, the thickness of the inorganic photosensitive substrate 11 below the piezoelectric thin film 12 can be easily adjusted by only exposure and development.

次に、本発明の他の実施例を第3図、第4図お
よび第5図に示す。
Next, other embodiments of the present invention are shown in FIGS. 3, 4, and 5.

第3図および第4図に示す実施例は、いずれ
も、第1図の実施例において、無機質感光性基板
11の板厚を厚くするとともに、凹部15の形成
後に、第3図の圧電共振子では圧電性薄膜11の
下部の無機質感光性基板11の板厚がその周囲の
板厚よりも厚くなるように、リング状の凹部16
を形成し、第4図の圧電共振子では圧電性薄膜1
1の下部の上記板厚がその周囲の板厚よりも薄く
なるように、凹部17を形成したものである。こ
れらはいわゆるエネルギーとじこめ効果を図つた
ものである。
In both the embodiments shown in FIGS. 3 and 4, the thickness of the inorganic photosensitive substrate 11 is increased in the embodiment shown in FIG. 1, and the piezoelectric resonator shown in FIG. Then, a ring-shaped recess 16 is formed so that the thickness of the inorganic photosensitive substrate 11 under the piezoelectric thin film 11 is thicker than the thickness of the surrounding area.
In the piezoelectric resonator shown in FIG. 4, a piezoelectric thin film 1 is formed.
The recessed portion 17 is formed so that the thickness of the lower portion of the recessed portion 17 is thinner than the thickness of the surrounding portion. These are intended to achieve the so-called energy trapping effect.

上記のようにすれば、高周波化によつて、振動
部分の板厚が薄くなつたとしても無機質感光性基
板11の板厚を大きくすることができ、振動や衝
撃に対して強い圧電共振子を得ることができる。
By doing the above, even if the thickness of the vibrating part becomes thinner due to higher frequencies, the thickness of the inorganic photosensitive substrate 11 can be increased, and the piezoelectric resonator can be made strong against vibrations and shocks. Obtainable.

また、単にエネルギーとじこめ効果をねらつ
て、第5図に示すように、圧電性薄膜12の下部
の無機質感光性基板11の板厚がその周囲の板厚
よりも厚くなるように、圧電性薄膜12の下部の
無機質感光性基板11を残して、該無機質感光性
基板11の他方の主面11bを露光および現像処
理するようにしてもよい。
In addition, simply aiming at the effect of confining energy, the piezoelectric thin film 12 is made such that the thickness of the inorganic photosensitive substrate 11 under the piezoelectric thin film 12 is thicker than the thickness of the surrounding area, as shown in FIG. The other main surface 11b of the inorganic photosensitive substrate 11 may be exposed and developed, leaving the inorganic photosensitive substrate 11 at the bottom.

発明の効果 以上、詳述したことからも明らかなように、本
発明は、誘電体基板と圧電性薄膜とを使用したバ
ルク波利用の圧電共振子において、誘電体基板と
して無機質感光性基板を使用して圧電性薄膜と対
向する部分の無機質感光性基板の板厚を他の部分
と異ならせる加工を露光および現像処理により行
うようにしたから、圧電性薄膜と対向する部分の
無機質感光性基板の板厚を調整する加工を容易に
行うことができ、エネルギー閉じ込めがより完全
で、高周波化が容易な圧電共振子を得ることがで
きる。
Effects of the Invention As is clear from the above detailed description, the present invention provides a piezoelectric resonator using a bulk wave using a dielectric substrate and a piezoelectric thin film, in which an inorganic photosensitive substrate is used as the dielectric substrate. Since the thickness of the inorganic photosensitive substrate in the portion facing the piezoelectric thin film is made different from that in other portions by exposure and development processing, the thickness of the inorganic photosensitive substrate in the portion facing the piezoelectric thin film is The piezoelectric resonator can be easily processed to adjust the plate thickness, has more perfect energy confinement, and can easily be made to operate at higher frequencies.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る圧電共振子の一実施例の
断面図、第2図a、第2図bおよび第2図cは
夫々第1図の圧電共振子の無機質感光性基板に凹
部を形成する工程の説明図、第3図、第4図およ
び第5図は夫々第1図とは異なる実施例の断面図
である。 11……無機質感光性基板、11a……一方の
主面、11b……他方の主面、12……圧電性薄
膜、13,14……電極、15,16,17……
凹部、21……感光性ガラス基板、22……紫外
線。
FIG. 1 is a cross-sectional view of an embodiment of a piezoelectric resonator according to the present invention, and FIGS. Explanatory drawings of the forming process, FIGS. 3, 4, and 5 are sectional views of embodiments different from those in FIG. 1, respectively. 11... Inorganic photosensitive substrate, 11a... One main surface, 11b... Other main surface, 12... Piezoelectric thin film, 13, 14... Electrode, 15, 16, 17...
Recessed portion, 21...photosensitive glass substrate, 22...ultraviolet light.

Claims (1)

【特許請求の範囲】[Claims] 1 相対向する主面に夫々電極を形成してなる圧
電性薄膜を平板状の無機質感光性基板の一方の主
面に形成するとともに、上記無機質感光性基板の
他方の主面を露光および現像処理して上記圧電性
薄膜と対向する部分の無機質感光性基板の板厚を
他の部分と異ならせたことを特徴とする複合圧電
共振子。
1. A piezoelectric thin film having electrodes formed on opposing main surfaces is formed on one main surface of a flat inorganic photosensitive substrate, and the other main surface of the inorganic photosensitive substrate is exposed to light and developed. A composite piezoelectric resonator characterized in that the thickness of the inorganic photosensitive substrate in the portion facing the piezoelectric thin film is different from that in other portions.
JP19842282A 1982-11-11 1982-11-11 Composite piezo-resonator Granted JPS5986916A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19842282A JPS5986916A (en) 1982-11-11 1982-11-11 Composite piezo-resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19842282A JPS5986916A (en) 1982-11-11 1982-11-11 Composite piezo-resonator

Publications (2)

Publication Number Publication Date
JPS5986916A JPS5986916A (en) 1984-05-19
JPH0347603B2 true JPH0347603B2 (en) 1991-07-19

Family

ID=16390836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19842282A Granted JPS5986916A (en) 1982-11-11 1982-11-11 Composite piezo-resonator

Country Status (1)

Country Link
JP (1) JPS5986916A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04241505A (en) * 1991-01-14 1992-08-28 Murata Mfg Co Ltd piezoelectric thin film vibrator
JP3323343B2 (en) * 1994-04-01 2002-09-09 日本碍子株式会社 Sensor element and particle sensor
EP0810676B1 (en) * 1996-05-27 2002-08-28 Ngk Insulators, Ltd. Piezoelectric film-type element
US5925972A (en) * 1996-09-27 1999-07-20 Ngk Insulators, Ltd. Multiple element particle sensor and signal processing electronics
WO2004088840A1 (en) * 2003-03-31 2004-10-14 Ube Industries, Ltd. Piezoelectric thin film device and method of producing the same

Also Published As

Publication number Publication date
JPS5986916A (en) 1984-05-19

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