JPH034961A - Coating apparatus - Google Patents
Coating apparatusInfo
- Publication number
- JPH034961A JPH034961A JP1140870A JP14087089A JPH034961A JP H034961 A JPH034961 A JP H034961A JP 1140870 A JP1140870 A JP 1140870A JP 14087089 A JP14087089 A JP 14087089A JP H034961 A JPH034961 A JP H034961A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chuck
- rotational speed
- motor
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明はレジスト及び現像液など処理液の塗布装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a coating device for processing liquids such as resist and developer.
[従来の技術及び発明が解決すべき課題]従来から、半
導体ウェハ製造工程のうちレジスト塗布工程では高速回
転するウェハ上に一定量のレジストをウェハ上に設けた
ノズルより滴下させ。[Prior Art and Problems to be Solved by the Invention] Conventionally, in the resist coating process in the semiconductor wafer manufacturing process, a certain amount of resist is dropped onto a wafer rotating at high speed from a nozzle provided on the wafer.
均一な膜厚のレジスト膜を塗布するスピンコータが使用
されている。また、レジスト塗布後所望のパターンを露
光して現像する工程でも一定量の現像液を高速回転させ
たウェハ上に滴下して現像、洗、浄を行うスピンデベロ
ッパが用いられている。A spin coater is used to apply a resist film of uniform thickness. Further, in the step of exposing and developing a desired pattern after resist coating, a spin developer is used, which performs development, washing, and cleaning by dropping a certain amount of developer onto a wafer that is rotating at high speed.
ここで、スピンコータやスピンデベロッパはモータ等の
回転駆動機構に接続されウェハを吸着する真空ポンプの
吸着口を備えたチャックによりウェハを支持し、モータ
の回転に伴いウェハを高速回転させて高粘度のレジスト
や現像液を滴下して均一な塗布を行うものである。この
時、モータの回転は滴下されたレジスト等を最初に中心
部に拡散させ、次に周辺部への塗布に従って回転速度を
変化させてレジストや現像液を全範囲に拡散させて塗布
を行っている。Here, spin coaters and spin developers support the wafer with a chuck that is connected to a rotation drive mechanism such as a motor and equipped with a suction port of a vacuum pump that adsorbs the wafer. It applies the resist or developer dropwise to achieve uniform coating. At this time, the motor rotates to first spread the dropped resist, etc. to the center, and then changes the rotation speed as it coats the periphery to spread the resist and developer over the entire area. There is.
ここで、モータの回転速度を急激に変化させる場合、例
えば回転開始時、塗布の途中中心部の塗布から周辺部へ
の拡散塗布を2000回転/分から4000回転/回転
度えるとウェハは急激に加速され、ウェハは回転方向と
反対方向に抵抗を生じてチャックの回転と同時に回転せ
ずにチャックが僅かなある期間ウェハよりチャックが速
く回転して両者の回転数にずれが生じてしまう、また急
激に減速する場合は逆にチャックよりウェハが速く回転
してウェハの回転数とチャックの回転数にずれを生じる
。その結果いずれの場合にも、ウェハとチャックとの界
面ではウェハとチャックが摩擦しスクラッチによるパー
ティクルが発生する。ここで通常チャックの材料として
はデルリン、テフロン(商品名)などのようにチャッキ
ングの際ウェハとの密着性が良好で、ウェハの裏面を損
傷することのないように比較的軟らかい樹脂が使用され
ている。例えばデルリンなどの樹脂をチャックの材料と
する場合デルリンはシリコンよりはるかに軟らかいため
チャックとウェハ間において主にデルリンのパーティク
ルがウェハ裏面に圧着されたりウェハ裏面の凹部に入り
込むなどウェハ裏面の汚染の起因となってしまう。If the rotational speed of the motor is suddenly changed, for example, at the start of rotation, the wafer will accelerate rapidly if the speed from the center coating to the peripheral area is changed from 2000 rpm to 4000 rpm during coating. When the chuck rotates faster than the wafer, the wafer creates resistance in the opposite direction to the rotation direction and does not rotate at the same time as the chuck. Conversely, when the speed is reduced to 1, the wafer rotates faster than the chuck, causing a discrepancy between the wafer rotation speed and the chuck rotation speed. As a result, in either case, particles are generated due to scratches due to friction between the wafer and the chuck at the interface between the wafer and the chuck. Usually, the material used for the chuck is a relatively soft resin such as Delrin or Teflon (trade name), which has good adhesion to the wafer during chucking and does not damage the back side of the wafer. ing. For example, when a resin such as Delrin is used as a material for the chuck, Delrin is much softer than silicon, so between the chuck and the wafer, Delrin particles are pressed onto the backside of the wafer or enter the recesses on the backside of the wafer, causing contamination on the backside of the wafer. It becomes.
本発明は上記の欠点を解消するためになされたもので、
高速回転するチャックの回転速度が急激に変化した時に
も支持台と被塗布体間に回転速度の違いを生じることが
なく、そのために支持台と被塗布体との摩擦に伴うパー
ティクル発生によるウェハの裏面汚染が生じない塗布装
置を提供することを目的とする。The present invention has been made to solve the above-mentioned drawbacks.
Even when the rotational speed of the high-speed chuck changes rapidly, there is no difference in rotational speed between the support base and the workpiece, which prevents wafer damage due to particles generated due to friction between the support base and the workpiece. An object of the present invention is to provide a coating device that does not cause backside contamination.
[課題を解決するための手段]
上記の目的を達成するため本発明の塗布装置は、回転駆
動機構に接続される支持台上に被塗布体を設けて回転塗
布する塗布装置において、前記支持台は前記回転駆動機
構の回転速度の変化を緩衝して伝達する伝動手段を介し
て前記回転駆動機構に接続される。[Means for Solving the Problems] In order to achieve the above object, the coating apparatus of the present invention provides a coating apparatus that performs rotational coating by providing an object to be coated on a support stand connected to a rotational drive mechanism. is connected to the rotary drive mechanism via a transmission means that buffers and transmits changes in the rotational speed of the rotary drive mechanism.
[作用]
本発明の塗布装置は回転駆動機構に接続されるチャック
は回転駆動機構の回転軸に流体継手あるいはスプリング
等の回転速度の急激な変化を緩衝して伝達する手段を介
して接続され、従って回転駆動機構の急激な回転数の変
化が生じても支持台に加わる加速度を減少させて支持台
が被塗布体を吸着する力の方を回転数の急激な変化によ
りうける力より相対的に大きくすることにより支持台に
被塗布体を確実に支持させ、被塗布体と支持台間に回転
速度の急激な変化に伴う回転のずれを生じさせない。こ
のため支持台と被塗布体が同じ回転運動をするため支持
台は被塗布体を固定して回転し、支持台と被塗布体間に
回転数のずれを生じることがない。従って支持台と被塗
布体との摩擦に伴うパーティクル発生による被塗布体の
裏面汚染はなく、クリーンな被処理体を製造することが
できる。[Function] In the coating device of the present invention, the chuck connected to the rotational drive mechanism is connected to the rotating shaft of the rotational drive mechanism via a means for buffering and transmitting sudden changes in rotational speed, such as a fluid coupling or a spring. Therefore, even if there is a sudden change in the rotational speed of the rotary drive mechanism, the acceleration applied to the support base is reduced, and the force with which the support base attracts the object to be coated is relatively stronger than the force received due to a sudden change in the rotational speed. By increasing the size, the object to be coated can be reliably supported by the support base, and rotational deviation due to sudden changes in rotational speed will not occur between the object to be coated and the support base. Therefore, since the support base and the object to be coated perform the same rotational movement, the support base rotates while fixing the object to be coated, and there is no difference in rotational speed between the support stand and the object to be coated. Therefore, there is no contamination of the back surface of the object to be coated due to generation of particles due to friction between the support base and the object to be coated, and a clean object to be treated can be manufactured.
[実施例]
本発明の塗布装置を半導体ウェハへのレジスト塗布装置
に適用した一実施例を図面を参照して説明する。[Example] An example in which the coating apparatus of the present invention is applied to a resist coating apparatus for semiconductor wafers will be described with reference to the drawings.
第1図の構成図に図示のレジスト塗布装置は真空吸着等
によって半導体ウェハWを載置固定し回転駆動機構であ
るモータ1の回転軸2に回転数の変化を緩衝して伝達す
る伝動手段3を介して固定される上面円板状のチャック
4の中央部上方にレジストを滴下するノズル5が設けら
れる。このノズル5は例えばロットの切れ目等でノズル
からのディスペンスが所定時間実行されない場合にはノ
ズル4をチャック4上方より外側位置まで退避させる必
要があるため、スキャナー(図示せず)等によ、り移動
自在となっている。ノズル5はレジストの供給装置であ
る液体供給系6に接続される。The resist coating apparatus shown in the configuration diagram of FIG. 1 mounts and fixes a semiconductor wafer W by vacuum suction or the like, and transmits a transmission means 3 to a rotating shaft 2 of a motor 1, which is a rotational drive mechanism, while buffering changes in rotation speed. A nozzle 5 for dropping a resist droplet is provided above the central portion of the chuck 4, which has a disk shape on the upper surface and is fixed via the chuck 4. If dispensing from the nozzle is not performed for a predetermined period of time due to a break in a lot, for example, the nozzle 4 needs to be retracted from above the chuck 4 to an outer position. It is movable. The nozzle 5 is connected to a liquid supply system 6 which is a resist supply device.
液体供給系6はレジスト収納容器に収納されたレジスト
を所望の一定量供給するポンプ例えばベローズポンプ、
フィルタ容器、ポンプを連動して開閉されるバルブ、レ
ジストをノズル5から吐出後レジストをノズル5内に引
き戻し、レジストの液だれあるいは同化を防止するため
のサックバックバルブが設けられる。また、レジスト塗
布時にレジストが装置外部へ飛散することを防止するた
め処理容器としてのカップ7がウェハWの周囲に設けら
れる。尚、カップ7は上下動可能であってウェハWの搬
入量時には図示の位置より下降し、チャック4が露出し
搬入量を容易にするように構成され、カップ7の下部に
はドレイン管、排気管等(図示せず)が接続される。The liquid supply system 6 includes a pump such as a bellows pump that supplies a desired constant amount of the resist stored in the resist storage container.
A filter container, a valve that is opened and closed in conjunction with the pump, and a suck-back valve that pulls the resist back into the nozzle 5 after discharging the resist from the nozzle 5 to prevent dripping or assimilation of the resist are provided. Further, a cup 7 serving as a processing container is provided around the wafer W to prevent the resist from scattering outside the apparatus during resist application. The cup 7 is movable up and down, and is configured to be lowered from the position shown in the figure when loading the wafer W, exposing the chuck 4 and facilitating loading. A pipe or the like (not shown) is connected.
ここで、本発明の回転駆動機構の回転速度の制御即ち単
位時間当りの回転数の変化を緩衝してチャックに伝達す
る伝動手段3について説明する。Here, the transmission means 3 for controlling the rotational speed of the rotational drive mechanism of the present invention, that is, for buffering changes in the number of rotations per unit time and transmitting the changes to the chuck, will be explained.
回転数の変化を緩衝してチャックに伝達する手段は第2
図に示すような流体継手であってもよい。The means for buffering the change in rotation speed and transmitting it to the chuck is the second one.
It may also be a fluid coupling as shown in the figure.
流体継手はモータ1の回転軸2の中間に一定面積を有す
る1対の円盤8.9が粘性のあるオイル10等を介して
配設され、モータ1に接続された円盤8の回転により生
じるオイル1oのうず流に連動され、チャック4に接続
される円盤9に回転が生じる。従ってモータ1の回転の
急激な変化は円盤8から除々に時間差を持って円盤9に
伝達される。In the fluid coupling, a pair of disks 8 and 9 having a fixed area are placed in the middle of the rotating shaft 2 of the motor 1 with viscous oil 10 interposed therebetween, and the oil generated by the rotation of the disk 8 connected to the motor 1 Rotation occurs in the disk 9 connected to the chuck 4 in conjunction with the eddy flow of 1o. Therefore, a sudden change in the rotation of the motor 1 is transmitted from the disk 8 to the disk 9 gradually with a time difference.
また、他の回転数の変化を緩衝してチャックに伝達する
手段としてスプリング継手も好適に使用できる。第3図
及び第4図に示すように、円盤8.9間をスプリング1
1.12を介して接続し、モータ1の回転の急激な変化
をチャック4に緩衝して除々に伝達することができる。In addition, a spring joint can also be suitably used as a means for buffering and transmitting other changes in rotational speed to the chuck. As shown in Figures 3 and 4, the spring 1 is connected between the discs 8 and 9.
1.12, so that sudden changes in the rotation of the motor 1 can be buffered and gradually transmitted to the chuck 4.
また、他の継手としてモータ1の回転軸2とチャック4
の回転軸をベルトで連結するようにしてもよい。In addition, as other joints, the rotating shaft 2 of the motor 1 and the chuck 4
The rotating shafts of the two may be connected by a belt.
以上のような構成の塗布装置を用いた動作を説明する。The operation using the coating apparatus configured as above will be explained.
レジスト供給系6より一定量のレジストが送られ、ノズ
ル5からウェハWの中心部にレジストが滴下されると、
第5図の回転数と時間の関係のグラフの実線で示すよう
にモータ1は8秒間で0から2000回転/分になるま
で加速され、2000回転/分でウェハの中心部に拡散
される。b秒後再び(c−b)秒間に4000回転/分
になるまで加速され、4000回転/分で(d−c)秒
間ウェハ周辺部に紋るまで全面に均一にレジストが塗布
される。When a certain amount of resist is sent from the resist supply system 6 and dropped from the nozzle 5 onto the center of the wafer W,
As shown by the solid line in the graph of the relationship between rotational speed and time in FIG. 5, the motor 1 is accelerated from 0 to 2000 rotations/min in 8 seconds, and is spread to the center of the wafer at 2000 rotations/min. After b seconds, the resist is accelerated again to 4000 revolutions/min for (c-b) seconds, and resist is uniformly applied to the entire surface of the wafer until streaks are formed at the periphery of the wafer at 4000 revolutions/min for (d-c) seconds.
塗布終了後e秒後に2000回転/分まで回転数を降下
させ、f秒後さらに(g−f)秒間で0まで回転数を下
げる。しかし、この時緩衝して伝達する手段を設けたた
め、モータ1の実線で示すa、b、C1・・・・gにお
ける急激な回転数の変化はチャック4には点線で示すよ
うに、曲線の変化として伝達され、急激な回転数の変化
から受けるショックは緩衝される。そのため、チャック
4とウェハW間に回転数のずれを生じることなく、チャ
ックとウェハとの摩擦に伴うパーティクル発生によるウ
ェハの裏面の汚染はない。The rotation speed is lowered to 2000 revolutions/minute e seconds after the completion of coating, and after f seconds, the rotation speed is further lowered to 0 in (g−f) seconds. However, since a buffering and transmitting means was provided at this time, the sudden change in rotational speed at points a, b, C1... It is transmitted as a change, and the shock received from a sudden change in rotational speed is buffered. Therefore, there is no difference in rotational speed between the chuck 4 and the wafer W, and there is no contamination of the back surface of the wafer due to particles generated due to friction between the chuck and the wafer.
以上の説明のレジスト塗布装置は一実施例であって1本
発明はこれに限定されることはなく、現像装置のスピン
デベロッパ、スプレエツチング等にも好適に用いること
ができるのは言うまでもない事である。The resist coating device described above is one example, and the present invention is not limited thereto, and it goes without saying that it can be suitably used for a spin developer, spray etching, etc. of a developing device. be.
[発明の効果]
以上の説明から明らかなように本発明の塗布装置は、モ
ータの速度変化を緩衝して被塗布体の支持台に伝達され
るため、被塗布体と支持台間に回転速度の急激な変化に
伴う回転のずれが生じない。[Effects of the Invention] As is clear from the above explanation, the coating device of the present invention buffers the speed change of the motor and transmits it to the support base of the object to be coated, so that the rotational speed is maintained between the object to be coated and the support base. No deviation in rotation occurs due to sudden changes in rotation.
このため、被塗布体と支持台との摩擦に伴うパーティク
ル発生による被塗布体の裏面汚染はなくクリーンな被処
理体を製造することができる。Therefore, there is no contamination of the back surface of the object to be coated due to the generation of particles due to friction between the object to be coated and the support, and a clean object to be processed can be manufactured.
第1図は本発明の塗布装置の一実施例の楕成図、第2図
は開部分断面図、第3図及び第4図は同部分斜視図、第
5図は一実施例の説明図である。
3・・・・・・伝動手段
、4・・・・・・チャック
5・・・・・・ノズル
6・・・・・・レジスト供給系(液体供給系)w1+・
■ウェハFig. 1 is an elliptical diagram of one embodiment of the coating device of the present invention, Fig. 2 is a sectional view of an open part, Figs. 3 and 4 are perspective views of the same part, and Fig. 5 is an explanatory diagram of one embodiment. It is. 3...Transmission means, 4...Chuck 5...Nozzle 6...Resist supply system (liquid supply system) w1+.
■Wafer
Claims (1)
回転塗布する塗布装置において、前記支持台は前記回転
駆動機構の回転速度の変化を緩衝して伝達する伝動手段
を介して前記回転駆動機構に接続されることを特徴とす
る塗布装置。In a coating device that performs rotational coating by providing a workpiece on a support stand connected to a rotational drive mechanism, the support stand transfers the rotational speed of the rotational drive mechanism through a transmission means that buffers and transmits changes in the rotational speed of the rotational drive mechanism. A coating device characterized in that it is connected to a drive mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140870A JP2950849B2 (en) | 1989-06-02 | 1989-06-02 | Application method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140870A JP2950849B2 (en) | 1989-06-02 | 1989-06-02 | Application method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH034961A true JPH034961A (en) | 1991-01-10 |
| JP2950849B2 JP2950849B2 (en) | 1999-09-20 |
Family
ID=15278670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1140870A Expired - Fee Related JP2950849B2 (en) | 1989-06-02 | 1989-06-02 | Application method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2950849B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114522857A (en) * | 2022-03-16 | 2022-05-24 | 中国科学院山西煤炭化学研究所 | Dynamic coating machine for disc electrode |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101570163B1 (en) * | 2014-02-11 | 2015-11-19 | 세메스 주식회사 | Apparatus and method for treating substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6324621A (en) * | 1986-07-16 | 1988-02-02 | Nec Corp | Coating applicator of photoresist |
-
1989
- 1989-06-02 JP JP1140870A patent/JP2950849B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6324621A (en) * | 1986-07-16 | 1988-02-02 | Nec Corp | Coating applicator of photoresist |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114522857A (en) * | 2022-03-16 | 2022-05-24 | 中国科学院山西煤炭化学研究所 | Dynamic coating machine for disc electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2950849B2 (en) | 1999-09-20 |
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| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |