JPH0351676B2 - - Google Patents
Info
- Publication number
- JPH0351676B2 JPH0351676B2 JP59126326A JP12632684A JPH0351676B2 JP H0351676 B2 JPH0351676 B2 JP H0351676B2 JP 59126326 A JP59126326 A JP 59126326A JP 12632684 A JP12632684 A JP 12632684A JP H0351676 B2 JPH0351676 B2 JP H0351676B2
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- magnesium
- calcium
- single crystal
- total amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
〔産業上の利用分野〕
本発明はタングステン単結晶とその製造方法に
関するものである。ここで言う単結晶とは板厚に
比較して非常に大きい巨大結晶粒を含むものとす
る。
〔従来技術〕
耐熱性材料としては、高温強度に優れた多結晶
タングステンが知られているが、この多結晶タン
グステンの欠点は結晶粒界が脆いことである。さ
らに、多結晶タングステンは室温以下での成型加
工性が極めて悪く、また高温での使用時におい
て、結晶粒が粗大化して、再結晶脆性を引き起す
ため、耐熱材料としての特性を十分に発揮するこ
とができない。従つて多結晶タングステンの用途
は限られてしまう。
従つて結晶粒界がないかあるいは極めて少な
い、しかも任意形状に成型加工後においてもタン
グステン単結晶を提供することができれば、大出
力レーザ反射鏡、IC基板材料、原子核融合炉の
炉材、原子炉の発熱体、ルツボ及び電子部品等に
用いた場合、結晶粒界脆性によつて機械的に破損
することなく、消耗するまで使用が可能となり、
利用分野が著しく拡大される。この種のタングス
テン材料として巨大粒を含むタングステン材料あ
るいは単結晶タングステン材料が考えられる。
ところで、従来からタングステン単結晶は帯域
溶融法等によつて作製可能であるけれども形状あ
るいは製造規模が制約され、さらには製造技術に
熟練を要するという問題点がある。
〔発明の目的〕
本発明の目的は結晶粒界脆性による破損が生じ
ることなく任意の形状を有するタングステン単結
晶を提供することにある。
本発明の他の目的は熟練を要せず、従つて極め
て容易に上記のタングステン単結晶を製造できる
製造方法を提供することである。
〔発明の構成〕
本発明によるタングステン単結晶はカルシウム
及びマグネシウムの少なくとも一方を総量で
0.007乃至0.090原子パーセント含有している。ま
たこのタングステン単結晶はカルシウム及びマグ
ネシウムの少なくとも一方を総量で0.007乃至
0.0090原子パーセント含むタングステン多結晶体
を予め定められた形状に成型し、この成型体を予
め定められた雰囲気において焼鈍することによつ
て得られる。
〔発明の実施例〕
以下本発明について実施例に基づいて説明す
る。
タングステン酸化物の粉末に、表−1に示すよ
うに試料番号1〜6に示す種々の割合でカルシウ
ム及びマグネシウムを湿式法によつて添加し、粉
末冶金法を用いて、金属粉末とした。この金属粉
末を圧力3ton/cm2で成形した後、温度1800〜2000
℃の水素雰囲気で10時間焼結して焼結体とした。
さらにこの焼結体に熱間加工(温度1600〜1200
℃)及び温間加工(1000〜500℃)を施し、最終
の圧延率が70%以上となるようにして1〜2mm
(厚さ)×30mm(幅)×150mm(長さ)の標準板状試
料1〜6を作製した。そしてこの標準板状試料1
〜6を温度2500℃の予め定められた雰囲気で3時
間焼鈍を行つた。
[Industrial Application Field] The present invention relates to a tungsten single crystal and a method for manufacturing the same. The term "single crystal" as used herein refers to a material containing giant crystal grains that are extremely large compared to the plate thickness. [Prior Art] Polycrystalline tungsten, which has excellent high-temperature strength, is known as a heat-resistant material, but a drawback of this polycrystalline tungsten is that its grain boundaries are brittle. Furthermore, polycrystalline tungsten has extremely poor moldability at temperatures below room temperature, and when used at high temperatures, its crystal grains become coarse and recrystallization embrittlement occurs, making it unable to fully demonstrate its properties as a heat-resistant material. I can't. Therefore, the uses of polycrystalline tungsten are limited. Therefore, if it is possible to provide a tungsten single crystal with no or very few grain boundaries, even after forming into an arbitrary shape, it would be useful for high-power laser reflectors, IC substrate materials, reactor materials for nuclear fusion reactors, and nuclear reactors. When used in heating elements, crucibles, electronic parts, etc., it can be used until it wears out without mechanical damage due to grain boundary brittleness.
The field of application will be significantly expanded. As this type of tungsten material, a tungsten material containing giant grains or a single crystal tungsten material can be considered. Incidentally, although tungsten single crystals have conventionally been able to be produced by a zone melting method or the like, there have been problems in that the shape or production scale is limited, and furthermore, the production technique requires skill. [Object of the Invention] An object of the present invention is to provide a tungsten single crystal having an arbitrary shape without causing damage due to grain boundary embrittlement. Another object of the present invention is to provide a manufacturing method that does not require any skill and can therefore produce the above-mentioned tungsten single crystal very easily. [Configuration of the Invention] The tungsten single crystal according to the present invention contains at least one of calcium and magnesium in the total amount.
It contains 0.007 to 0.090 atomic percent. In addition, this tungsten single crystal contains at least one of calcium and magnesium in a total amount of 0.007 to 0.007.
It is obtained by molding a tungsten polycrystal containing 0.0090 atomic percent into a predetermined shape and annealing this molded body in a predetermined atmosphere. [Examples of the Invention] The present invention will be described below based on Examples. Calcium and magnesium were added to the tungsten oxide powder by a wet method in various ratios shown in sample numbers 1 to 6 as shown in Table 1, and metal powder was obtained using a powder metallurgy method. After molding this metal powder at a pressure of 3 tons/ cm2 , the temperature is 1800 to 2000.
A sintered body was obtained by sintering in a hydrogen atmosphere at ℃ for 10 hours.
Furthermore, this sintered body is subjected to hot processing (temperature 1600-1200
℃) and warm working (1000 to 500℃) to achieve a final rolling reduction of 70% or more to 1 to 2 mm.
Standard plate-shaped samples 1 to 6 of (thickness) x 30 mm (width) x 150 mm (length) were prepared. And this standard plate sample 1
-6 were annealed for 3 hours in a predetermined atmosphere at a temperature of 2500°C.
【表】
上記の表から明らかなように試料番号1の板状
試料の結晶状態は細粒であり、試料番号2及び6
の板状試料の結晶状態は巨大粒を含む実質的に半
結晶を形成している。また試料番号3、4及び5
の板状試料の結晶状態は単結晶である。
発明者らの実験によれば、カルシウム、マグネ
シウムの含有量が総量で0.007原子%未満である
と結晶状態を結晶粒界のない巨大粒あるいは単結
晶とすることが難しく、またカルシウム、マグネ
シウムの含有量が総量で0.090原子%を越えると、
結晶状態はカルシウム、マグネシウムを添加しな
い場合よりも悪くなることがわかつた(即ちより
細粒状態となつてしまう。)。カルシウム、マグネ
シウムの含有量が総量で0.090原子%を越えた場
合には正常結晶粒成長に対するピンニング効果が
強力となり、粒成長を抑制するためと考えられ
る。
なお、上述の実施例では粉末冶金法によつて所
定量のカルシウム、マグネシウムを含有するタン
グステンを成形、加工を行つたが、溶融法を用い
てもよい。ただし溶融法を用いる場合はマグネシ
ウム及びカルシウムの蒸気圧が高いため含有量を
調整することも、その後の加工も容易でない。
また上述の実施例においてはカルシウム、マグ
ネシウム両者を添加し、総量が0.007乃至0.090原
子%の場合について説明したが、表−2及び表−
3に示すようにカルシウム、マグネシウムどちら
か一方が0.007乃至0.090原子%の範囲でもよいこ
とがわかつた。なお、この場合の焼鈍温度、焼鈍
時間等は前述の表−1の実施例と同様である。[Table] As is clear from the table above, the crystalline state of the plate-like sample No. 1 is fine grain, and
The crystalline state of the plate-shaped sample is substantially semi-crystalline containing giant grains. Also sample numbers 3, 4 and 5
The crystalline state of the plate-shaped sample is single crystal. According to experiments conducted by the inventors, when the total content of calcium and magnesium is less than 0.007 at%, it is difficult to make the crystal state into giant grains or single crystals without grain boundaries. If the total amount exceeds 0.090 atomic%,
It was found that the crystalline state was worse than when calcium and magnesium were not added (that is, the crystalline state became finer). This is considered to be because when the total content of calcium and magnesium exceeds 0.090 atomic %, the pinning effect on normal grain growth becomes strong and grain growth is suppressed. In the above embodiment, tungsten containing predetermined amounts of calcium and magnesium was molded and processed by a powder metallurgy method, but a melting method may also be used. However, when using the melting method, it is difficult to adjust the content and subsequent processing because the vapor pressure of magnesium and calcium is high. In addition, in the above-mentioned example, the case where both calcium and magnesium were added and the total amount was 0.007 to 0.090 at% was explained, but Table-2 and Table-
As shown in 3, it was found that either calcium or magnesium may be present in the range of 0.007 to 0.090 atomic %. Incidentally, the annealing temperature, annealing time, etc. in this case are the same as those in the example shown in Table 1 above.
【表】【table】
以上説明したように本発明ではカルシウムまた
はマグネシウムの少なくとも一方を総量で0.007
乃至0.090原子パーセント含むタングステン圧粉
体を焼結させて、所定の形状に加工した後、焼鈍
させて粒界のない巨大粒または単結晶のタングス
テン材料を得ることができる。従つてカルシウム
またはマグネシウムの少なくとも一方を総量で
0.007乃至0.090原子パーセント含むタングステン
単結晶は高温状態においても脆性を引き起すこと
なく、大出力レーザー反射鏡、IC基板材料、原
子炉、核融合炉の炉材、電気炉等の通常炉が用い
られる発熱体、ルツボ及び電子部品などに利用す
ることができる。
As explained above, in the present invention, the total amount of at least one of calcium and magnesium is 0.007
A tungsten compact containing 0.090 to 0.090 atomic percent is sintered, processed into a predetermined shape, and then annealed to obtain a giant-grained or single-crystal tungsten material without grain boundaries. Therefore, the total amount of at least one of calcium and magnesium
Tungsten single crystals containing 0.007 to 0.090 atomic percent do not cause brittleness even in high-temperature conditions, and can be used in high-power laser reflectors, IC substrate materials, nuclear reactors, reactor materials for nuclear fusion reactors, and ordinary furnaces such as electric furnaces. It can be used for heating elements, crucibles, electronic parts, etc.
Claims (1)
の少なくとも一方を総量で0.007乃至0.090原子パ
ーセント含有するタングステン単結晶。 2 カルシウム及びマグネシウムの少なくとも一
方を総量で0.007乃至0.090原子パーセント含有す
るタングステン多結晶体を予め定められた形状の
成形体に成形し、該成形体を焼鈍することを特徴
とするタングステン単結晶の製造方法。[Claims] 1. A tungsten single crystal containing at least one of calcium and magnesium in a total amount of 0.007 to 0.090 atomic percent in tungsten. 2. Production of a tungsten single crystal, which is characterized by forming a tungsten polycrystal containing at least one of calcium and magnesium in a total amount of 0.007 to 0.090 atomic percent into a molded body of a predetermined shape, and annealing the molded body. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59126326A JPS616197A (en) | 1984-06-21 | 1984-06-21 | Single crystal of tungsten and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59126326A JPS616197A (en) | 1984-06-21 | 1984-06-21 | Single crystal of tungsten and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS616197A JPS616197A (en) | 1986-01-11 |
| JPH0351676B2 true JPH0351676B2 (en) | 1991-08-07 |
Family
ID=14932415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59126326A Granted JPS616197A (en) | 1984-06-21 | 1984-06-21 | Single crystal of tungsten and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS616197A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2920202B2 (en) * | 1996-07-08 | 1999-07-19 | 科学技術庁金属材料技術研究所長 | Crystalline orientation controlled single crystal of molybdenum or tungsten and method for producing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS582289A (en) * | 1981-06-30 | 1983-01-07 | Matsushita Electric Ind Co Ltd | Manufacture of single crystal body |
-
1984
- 1984-06-21 JP JP59126326A patent/JPS616197A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS616197A (en) | 1986-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |