JPH0351735A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH0351735A JPH0351735A JP18774889A JP18774889A JPH0351735A JP H0351735 A JPH0351735 A JP H0351735A JP 18774889 A JP18774889 A JP 18774889A JP 18774889 A JP18774889 A JP 18774889A JP H0351735 A JPH0351735 A JP H0351735A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- contact
- diffused
- resistors
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体圧力センサに関し、特にオフセット
やオフセットの温度特性を改善できる拡散抵抗の構造に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor pressure sensor, and particularly to a structure of a diffused resistor that can improve offset and offset temperature characteristics.
従来、この種の半導体圧力センサは、第３図（ａ）に示
すように、ダイアフラム１の周辺部にゲージ抵抗２ａが
ホイートストンブリッジを構成するように４個形成して
あった。ここでゲージ抵抗２ａはシリコンに不純物を拡
散して形成した拡散抵抗で構成してあり、このゲージ抵
抗２ａは、第３図（ｂ）に示すように複数本の拡散抵抗
１１を直列に接続して構成され、各抵抗間は導電性の金
属２１で接続されていた。この拡散抵抗１１の抵抗値が
被測定流体の圧力によって励起されたダイアフラム１の
上の歪みによって変化することにより、ホイートストン
ブリッジのバランスが変化し、圧力に比例した出力が得
られるものとなっていた。なお、導電性金属２１と拡散
抵抗１１との間にスルーホール１８が設けられている。Conventionally, in this type of semiconductor pressure sensor, four gauge resistors 2a were formed around a diaphragm 1 to form a Wheatstone bridge, as shown in FIG. 3(a). Here, the gauge resistor 2a is composed of a diffused resistor formed by diffusing impurities into silicon, and this gauge resistor 2a is formed by connecting a plurality of diffused resistors 11 in series as shown in FIG. 3(b). Each resistor was connected with a conductive metal 21. When the resistance value of the diffusion resistor 11 changes due to the strain on the diaphragm 1 excited by the pressure of the fluid to be measured, the balance of the Wheatstone bridge changes, and an output proportional to the pressure is obtained. . Note that a through hole 18 is provided between the conductive metal 21 and the diffused resistor 11.
上述した従来の半導体圧力センサの構成では、複数本の
拡散抵抗１１が直列に接続されていたために、シリコン
７中の拡散抵抗部とシリコン上の接続部の間に生ずる接
触抵抗値が抵抗の本数に比例して増加していた。この接
触抵抗と実際の拡散抵抗１１の値の合計がゲージ抵抗値
になるわけであるが、その接触抵抗値がばらつくため４
個のゲージ抵抗２ａにより構成されているホビー１〜ス
トンブリツジのオフセット値がデバイスによってばらつ
いていた。また、この接触抵抗と拡散抵抗の各々が持つ
抵抗値の温度係数が異なるために、ホイートストンブリ
ッジのオフセットの温度特性のばらつきを招いていた。In the configuration of the conventional semiconductor pressure sensor described above, since the plurality of diffused resistors 11 are connected in series, the contact resistance value generated between the diffused resistor part in the silicon 7 and the connection part on the silicon is equal to the number of resistors. was increasing in proportion to. The sum of this contact resistance and the value of the actual diffusion resistance 11 is the gauge resistance value, but since the contact resistance value varies,
The offset values of Hobby 1 to Stone Bridge, which are composed of gauge resistors 2a, varied depending on the device. Furthermore, since the contact resistance and the diffused resistance each have different temperature coefficients of resistance, this causes variations in the temperature characteristics of the offset of the Wheatstone bridge.
この拡散抵抗の抵抗値をＲ，アルミニウム等の導電性物
質と拡散抵抗の接触抵抗を△Ｒ３とすれば、この場合の
ゲージ抵抗値ＧＲ２は水式となる。If the resistance value of this diffused resistor is R, and the contact resistance between the conductive material such as aluminum and the diffused resistor is ΔR3, then the gauge resistance value GR2 in this case is expressed by the water formula.
ＧＲ２＝ （Ｒ＋△Ｒ３Ｘ２）Ｘ３＝ＲＸ３＋ΔＲ３×
に
の場合、アルミニウム等の導電性物質２１とシリコン上
の拡散抵抗１との間の接触抵抗ΔＲ３は、拡散抵抗のシ
ート抵抗値に比例した値となり、接触抵抗ΔＲ３は、拡
散抵抗１１のシート抵抗に比例する。一般的に、ゲージ
抵抗２ａのシート抵抗はコンタクト用抵抗部のシート抵
抗より１０倍程度は高いので、接触抵抗ΔＲ３が太きい
本発明の目的は、複数本の拡散抵抗を複数回の拡散によ
り形成することにより、接触抵抗を少くし、ゲージ抵抗
のばらつきを少くし、オフセット値を抑え、センサ特性
を改善した半導体圧力センサを提供することにある。GR2= (R+△R3X2)X3=RX3+ΔR3×
In the case of is proportional to. Generally, the sheet resistance of the gauge resistor 2a is about 10 times higher than the sheet resistance of the contact resistor part, so the purpose of the present invention, which has a large contact resistance ΔR3, is to form multiple diffused resistors by multiple diffusions. By doing so, it is an object of the present invention to provide a semiconductor pressure sensor in which contact resistance is reduced, variation in gauge resistance is reduced, offset value is suppressed, and sensor characteristics are improved.
本発明の構成は、薄膜ダイアフラム部と圧力検知素子か
らなる半導体圧力センサにおいて、前記圧力検知素子を
構成する拡散抵抗を複数回の拡散工程により形成し、こ
れら拡散抵抗をコンタクト用拡散部を介して導電性物質
と接続したことを特徴とする。The structure of the present invention is that in a semiconductor pressure sensor consisting of a thin film diaphragm part and a pressure sensing element, a diffused resistor constituting the pressure sensing element is formed by a plurality of diffusion steps, and these diffused resistors are connected via a contact diffusion part. It is characterized by being connected to a conductive substance.
以下、この発明の実施例を図面を用いて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図（ａ）、（ｂ）は本発明の半導体圧力センサの一
実施例の斜視図およびそのゲージ抵抗の平面図である。FIGS. 1(a) and 1(b) are a perspective view of an embodiment of the semiconductor pressure sensor of the present invention and a plan view of its gauge resistance.
本実施例でダイアフラム１は、被測定流体の圧力を受け
てシリコン７の上に歪みを誘起する。ダイアフラム１の
周辺部にゲージ抵抗２．３，４．５を形成する。これら
ゲージ抵抗２．３，４．５は、アルミニウムのような導
電性物質６によって接続され、ホイートストンブリッジ
を構成している。In this embodiment, the diaphragm 1 induces strain on the silicon 7 in response to the pressure of the fluid to be measured. Gauge resistors 2.3 and 4.5 are formed around the diaphragm 1. These gauge resistors 2.3, 4.5 are connected by a conductive material 6 such as aluminum to form a Wheatstone bridge.
これらゲージ抵抗の構成は、第１図（ｂ）のように、拡
散抵抗１１〜１３の３本を使用している。これら拡散抵
抗１１〜１３はコンタクト用拡散部１４〜１６を介して
アルミニウム等の導電性物質１７によって接続されてい
る。この場合、その接触抵抗は拡散抵抗１１〜１３とコ
ンタクト用拡散部１４〜１６間の抵抗、およびコンタク
トホール１８における拡散部１４〜１６と導電性物質１
７の接触面の抵抗である。拡散抵抗１１〜１３の１本当
たりの抵抗をＲ１拡散抵抗１１〜１３とコンタクト用拡
散部１４〜１６間の接触抵抗をΔＲ１、コンタクトホー
ル１８におけるコンタクト用拡散部１４〜１６と導電性
物質１７の接触抵抗を△Ｒ２としたとき、ゲージ抵抗の
抵抗値ＧＲ１は次のようになる。The configuration of these gauge resistors uses three diffused resistors 11 to 13, as shown in FIG. 1(b). These diffused resistors 11 to 13 are connected by a conductive material 17 such as aluminum through contact diffusion parts 14 to 16. In this case, the contact resistance is the resistance between the diffusion resistors 11 to 13 and the contact diffusion parts 14 to 16, and the resistance between the diffusion parts 14 to 16 in the contact hole 18 and the conductive material 1.
7 is the resistance of the contact surface. The resistance per diffused resistor 11 to 13 is R1, the contact resistance between the diffused resistors 11 to 13 and the contact diffusion parts 14 to 16 is ΔR1, and the contact resistance between the contact diffusion parts 14 to 16 and the conductive material 17 in the contact hole 18 is When the contact resistance is ΔR2, the resistance value GR1 of the gauge resistance is as follows.
ＧＲ，＝ （Ｒ＋ΔＲ１×２＋ΔＲ２Ｘ２）Ｘ３＝Ｒ×
３＋ΔＲ１×６＋ΔＲ２×６
一方、従来の半導体圧力センサにおいては、第３図（ｂ
）のように、３本の拡散抵抗１１を用いてゲージ抵抗を
構成している。このゲージ抵抗ＧＲ２は、前述のように
次式となる。GR, = (R+ΔR1×2+ΔR2X2)X3=R×
3+ΔR1×6+ΔR2×6 On the other hand, in the conventional semiconductor pressure sensor, as shown in Fig. 3 (b
), three diffused resistors 11 are used to constitute a gauge resistor. This gauge resistance GR2 is expressed by the following formula as described above.
ＧＲ２＝ （Ｒ，＋△Ｒ３Ｘ２）Ｘ３＝ＲＸ３＋ΔＲ３
×に
れら接触抵抗ΔＲ１、ΔＲ２、ΔＲ３の値を比較する。GR2= (R, +△R3X2)X3=RX3+∆R3
The values of the contact resistances ΔR1, ΔR2, and ΔR3 are compared.
接触抵抗△Ｒ１は同じシリコン７の中の拡散抵抗同士な
ので、極めて小さい値になる。Since the contact resistance ΔR1 is a pair of diffused resistors in the same silicon 7, it has an extremely small value.
また、アルミニウム等の導電性物質とシリコン上の拡散
抵抗の間の接触抵抗△Ｒ２、ΔＲ３は、拡散抵抗のシー
ト抵抗値に比例した値となる。従って、接触抵抗ΔＲ２
はコンタクト用抵抗部のシート抵抗に比例し、接触抵抗
ΔＲ３は、拡散抵抗のシート抵抗に比例する。一般に、
ゲージ抵抗のシート抵抗はコンタクト用抵抗部のシート
抵抗より１０倍程度は高いめで、接触抵抗ΔＲ２の方が
ΔＲ３より大幅に小さく、従って、△Ｒ１くくΔＲ２〈
くΔＲ３となる。Further, contact resistances ΔR2 and ΔR3 between a conductive substance such as aluminum and a diffused resistor on silicon have values proportional to the sheet resistance value of the diffused resistor. Therefore, contact resistance ΔR2
is proportional to the sheet resistance of the contact resistance section, and the contact resistance ΔR3 is proportional to the sheet resistance of the diffused resistance. in general,
The sheet resistance of the gauge resistor is about 10 times higher than the sheet resistance of the contact resistance part, and the contact resistance ΔR2 is much smaller than ΔR3, so ΔR1 × ΔR2
ΔR3.
第２図は本発明の第２の実施例のゲージ抵抗部分の平面
図であり、拡散抵抗１１〜１３の３本を並列使用してい
る。これら拡散抵抗１１〜１３は、コンタクト用拡散部
１９を介してアルミニウム等の導電性物質１７により、
ブリッジを構成している０本実施例も第１の実施例の場
合と同様に、拡散抵抗１１〜１３の１本当たりの抵抗を
Ｒ、ゲージ抵抗とコンタクト用拡散部１９の接触抵抗を
ΔＲ１、コンタクト用拡散部１つと導電性物質１７の接
触抵抗を△Ｒ２としたときのゲージ抵抗の抵抗値ＧＲ３
は次のようになる。FIG. 2 is a plan view of the gauge resistor portion of the second embodiment of the present invention, in which three diffused resistors 11 to 13 are used in parallel. These diffused resistors 11 to 13 are connected to a conductive material 17 such as aluminum through a contact diffusion part 19.
In this embodiment as well as in the first embodiment, the resistance of each diffused resistor 11 to 13 is R, and the contact resistance between the gauge resistor and the contact diffusion part 19 is ΔR1. When the contact resistance between one contact diffusion part and the conductive material 17 is △R2, the resistance value GR3 of the gauge resistance
becomes as follows.
ＧＲ９＝Ｒ／４＋ΔＲ１×２＋△Ｒ２×２従って、本実
施例では、第１の実施例の場合より接触抵抗の影響が軽
減される。GR9=R/4+ΔR1×2+ΔR2×2 Therefore, in this embodiment, the influence of contact resistance is reduced compared to the case of the first embodiment.
以上説明したように、本発明の半導体圧力センサにおい
ては、ゲージ抵抗を複数回の拡散工程により形成した事
により、次の様な効果を有する。As explained above, the semiconductor pressure sensor of the present invention has the following effects by forming the gauge resistor through a plurality of diffusion steps.
（１）接触抵抗が低下するため、ゲージ抵抗値のばらつ
きが少なくなり、オフセットが減少する。(1) Since the contact resistance is reduced, variations in gauge resistance values are reduced, and offset is reduced.
（２）接触抵抗が低下するため、接触抵抗の温度係数の
影響を軽減でき、半導体圧力センサのオフセット温度特
性が改善される。(2) Since the contact resistance is reduced, the influence of the temperature coefficient of contact resistance can be reduced, and the offset temperature characteristics of the semiconductor pressure sensor are improved.
第１図（ａ）、（ｂ）は本発明の半導体圧力センサの一
実施例の斜視断面図およびその半導体圧力センサのゲー
ジ抵抗部分の平面図、第２図は本発明の第２の実施例の
ゲージ抵抗の平面図、第３図（ａ）、（ｂ）は従来の半
導体圧力センサの一例の斜視断面図およびそのゲージ抵
抗の一例の平面模式図である。
１・・・ダイアフラム、２，３，４．５・・・ゲージ抵
抗、６・・・導電性金属、７・・・シリコン、８・・・
パッド、１１〜１３・・・拡散抵抗、１４〜１６．１９
・・・コンタクト用拡散部、１７・・・導電性物質、１
８・・・帛 １ 図（幻
声 ２ 図
声 ７０ ζｂ）1(a) and 1(b) are perspective sectional views of one embodiment of a semiconductor pressure sensor of the present invention and a plan view of a gauge resistance portion of the semiconductor pressure sensor, and FIG. 2 is a second embodiment of the present invention. FIGS. 3(a) and 3(b) are a perspective sectional view of an example of a conventional semiconductor pressure sensor and a schematic plan view of an example of the gauge resistor. DESCRIPTION OF SYMBOLS 1... Diaphragm, 2, 3, 4.5... Gauge resistance, 6... Conductive metal, 7... Silicon, 8...
Pad, 11-13... Diffused resistance, 14-16.19
... Contact diffusion part, 17 ... Conductive material, 1
8...File 1 figure (phantom voice 2 figure voice 70 ζb)
Claims (1)
センサにおいて、前記圧力検知素子を構成する拡散抵抗
を複数回の拡散工程により形成し、これら拡散抵抗をコ
ンタクト用拡散部を介して導電性物質と接続したことを
特徴とする半導体圧力センサ。In a semiconductor pressure sensor consisting of a thin film diaphragm portion and a pressure sensing element, a diffused resistor constituting the pressure sensing element is formed by multiple diffusion steps, and these diffused resistors are connected to a conductive material via a contact diffusion portion. A semiconductor pressure sensor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18774889A JPH0351735A (en) | 1989-07-19 | 1989-07-19 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18774889A JPH0351735A (en) | 1989-07-19 | 1989-07-19 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0351735A true JPH0351735A (en) | 1991-03-06 |
Family
ID=16211514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18774889A Pending JPH0351735A (en) | 1989-07-19 | 1989-07-19 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0351735A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018021923A (en) * | 2017-09-12 | 2018-02-08 | 株式会社東芝 | Pressure sensor, microphone, and sound processing system |
-
1989
- 1989-07-19 JP JP18774889A patent/JPH0351735A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018021923A (en) * | 2017-09-12 | 2018-02-08 | 株式会社東芝 | Pressure sensor, microphone, and sound processing system |
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