JPH0352201A - voltage nonlinear resistor - Google Patents

voltage nonlinear resistor

Info

Publication number
JPH0352201A
JPH0352201A JP1187877A JP18787789A JPH0352201A JP H0352201 A JPH0352201 A JP H0352201A JP 1187877 A JP1187877 A JP 1187877A JP 18787789 A JP18787789 A JP 18787789A JP H0352201 A JPH0352201 A JP H0352201A
Authority
JP
Japan
Prior art keywords
added
voltage
tin
bi2sn3o9
discharge voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1187877A
Other languages
Japanese (ja)
Inventor
Tadashi Onomi
忠 小野美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1187877A priority Critical patent/JPH0352201A/en
Publication of JPH0352201A publication Critical patent/JPH0352201A/en
Pending legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To produce varistors having a good discharge voltage characteristic with less variation in varistor voltage by adding a specified amount of tin in the form of Bi2Sn3O9. CONSTITUTION:With zinc oxide as a main component, tin of 0.01 to 1.00mol% in Bi2Sn3O9 is added to this main component as a component. When the quantity of added Bi2Sn3O9 is less than 0.01mol%, a change rate of a permissible surge current becomes large, while alpha and a discharge voltage ratio turns inferior when the quantity is more than 1.00mol%. No reaction of SnO2 with Bi2O3 occurs in a process of a sintering reaction and a pyroclore phase is to be formed. According to this constitution, varistors having a good discharge voltage characteristic can be obtained with less variation in varistor voltage.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、各種電子機器などの回路電圧の安定化やサー
ジ及びノイズ吸収などに利用される電圧非直線抵抗器に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a voltage nonlinear resistor used for stabilizing circuit voltage and absorbing surges and noise in various electronic devices.

従来の技術 電圧非直線抵抗器は一般にバリスタと称され、電圧の安
定化やサージ吸収などに広く使用されている。その代表
的なものとしては、酸化亜鉛(ZnO)を主成分とする
バリスタが知られている。このZnOバリスタは、電圧
非直線性が良くサージ電流耐量が大きいなどの特徴を有
するものである。その製造方法は、zno(:R化ビス
マス( 8 120m).酸化コバルト(CO203)
.酸化マンガン(MnO+).#化アンチモン( S 
b203)などを微量添加して均一に混合し、成形後1
000℃〜1400℃で焼結し、その焼結体に電極を設
けてなるものである。このようなZnOバリスタにおい
て、非直線性の向上やサージ電流耐量向上などの点から
、一般的に添加物として酸化スズ(Sn02)が用いら
れている。
BACKGROUND OF THE INVENTION Voltage nonlinear resistors are generally called varistors and are widely used for voltage stabilization, surge absorption, and the like. As a typical example, a varistor whose main component is zinc oxide (ZnO) is known. This ZnO varistor has characteristics such as good voltage nonlinearity and large surge current withstand capacity. The manufacturing method is zno(:R bismuth (8 120m).Cobalt oxide (CO203)
.. Manganese oxide (MnO+). # antimony (S
Add a small amount of b203), etc., mix uniformly, and after molding 1
It is sintered at a temperature of 000°C to 1400°C, and an electrode is provided on the sintered body. In such ZnO varistors, tin oxide (Sn02) is generally used as an additive in order to improve nonlinearity and surge current resistance.

発明が解決しようとする課題 しかしながら、従来のこの構成では、スズを酸化スズの
形で添加しているために、焼結反応過程においてSnO
2とBi20gが700℃付近より反応し、B+25n
lOgが生成されていた。そのため、ZnOバリスタの
重要な中間生成物であるパイロクロア相の生成を妨害す
ることとなっていた。これにより、Zn○の異常粒成長
が起きやすく、バリスタ電圧のバラッキが大きくなり、
制限電圧特性が悪くなるという課題を有していた。
Problems to be Solved by the Invention However, in this conventional configuration, since tin is added in the form of tin oxide, SnO is added during the sintering reaction process.
2 and Bi20g react from around 700℃, B+25n
lOg was being produced. Therefore, the formation of the pyrochlore phase, which is an important intermediate product of ZnO varistors, has been hindered. As a result, abnormal grain growth of Zn○ is likely to occur, and the variation in varistor voltage becomes large.
The problem was that the limiting voltage characteristics deteriorated.

本発明は上記のような従来の課題を解決するもので、バ
リスタ電圧のバラッキが小さく、制限電圧特性の優れた
電圧非直線抵抗器を提供することを目的とするものであ
る。
The present invention solves the above-mentioned conventional problems, and aims to provide a voltage nonlinear resistor with small variations in varistor voltage and excellent limiting voltage characteristics.

課題を解決するための手段 この目的を達成するために本発明の電圧非直線性抵抗器
は、スズをBi2 SnmO*の形にして0.01〜1
.00モル%添加するものである。
Means for Solving the Problems To achieve this object, the voltage nonlinear resistor of the present invention is manufactured by using tin in the form of Bi2 SnmO*.
.. 00 mol% is added.

作用 この構成により、焼結反応過程においてSnO2とBI
zOaの反応がなく、パイロクロア相が形成されること
となり、バリスタ電圧のバラツキが減少し、制限電圧特
性の優れた電圧非直線性抵抗器を提供することができる
こととなる。
Function: With this configuration, SnO2 and BI are combined in the sintering reaction process.
There is no reaction of zOa, a pyrochlore phase is formed, and variations in varistor voltage are reduced, making it possible to provide a voltage nonlinear resistor with excellent limiting voltage characteristics.

実施例 以下、本発明を実施例にしたがって詳細に説明する。ま
ず、ZnO,8 120B ,CO201+MnOz,
 SbtOs, Sn02, B {2SnsOiの各
原料を下記の第1表に示した比率で調合した。
EXAMPLES Hereinafter, the present invention will be explained in detail based on examples. First, ZnO, 8 120B, CO201+MnOz,
Each raw material of SbtOs, Sn02, and B{2SnsOi was prepared in the ratio shown in Table 1 below.

次に、この調合した原料を湿式混合した後、バインダを
加えて造粒を行った。次いで、この造粒粉を成形後、1
250℃で焼成を行い、直径10間.厚さ1間の焼結体
を得た。この焼結体にA[J電極を形成して試料とした
。そして、各試料につき各50個のバリスタ電圧(v1
.A/ImlI)ヲ測定シ、その平均とバラツキ(δ。
Next, after wet mixing the prepared raw materials, a binder was added and granulation was performed. Next, after molding this granulated powder, 1
Fired at 250°C, with a diameter of 10mm. A sintered body with a thickness of 1 mm was obtained. An A[J electrode was formed on this sintered body and used as a sample. Then, for each sample, each 50 varistor voltages (v1
.. A/Iml) measurement, its average and dispersion (δ.

−1 )を第1表に併せて示す。また、電圧非直線係数
(a),制限電圧比(V2!IA/ Vl−A)および
サージ電流耐量(8/20μS,250OAの電流印加
後のv 1mAの変化率)についても示した。なお、第
1表中の試料番号4〜6が本発明によるものである。
-1) are also shown in Table 1. The voltage nonlinear coefficient (a), limiting voltage ratio (V2!IA/Vl-A), and surge current withstand capacity (rate of change in v 1 mA after application of current of 8/20 μS, 250 OA) are also shown. In addition, sample numbers 4 to 6 in Table 1 are according to the present invention.

(以  下  余  白) 第1表中の試料番号5および2の焼結体における粒子構
造を顕微鏡写真で見た状態を第1図,第2図に示す。第
1図および第2図より、本発明品(第1図)では異常粒
成長がほとんどないことが明らかである。
(Margins below) Figures 1 and 2 show microscopic photographs of the grain structures of the sintered bodies of sample numbers 5 and 2 in Table 1. From FIGS. 1 and 2, it is clear that the product of the present invention (FIG. 1) has almost no abnormal grain growth.

第1表から明らかなように、スズを B 12snsOiの形にして、0.01〜1.00モ
ル%添加したものは、従来のスズをSnO2の形で添加
したものに比べ、v1.A/Iulのバラツキが小さく
なっている。また、制限電圧比も優れたものとなってい
る。
As is clear from Table 1, when tin is added in the form of B12snsOi and 0.01 to 1.00 mol% is added, the v1. The variation in A/Iul is reduced. Furthermore, the limiting voltage ratio is also excellent.

しかし、B i2Sn.o.の添加量が0.01モル%
より少ない場合は、サージ電流耐量の変化率が大きくな
り、また1.00モル%より多い場合は、αや制限電圧
比が悪くなり、共に好ましくない。
However, B i2Sn. o. The amount added is 0.01 mol%
If it is less, the rate of change in the surge current withstand capacity will increase, and if it is more than 1.00 mol %, α and the limiting voltage ratio will deteriorate, both of which are not preferable.

発明の効果 以上のように本発明は、スズをBl,,Sna○9の形
で添加することにより、焼結反応過程におけるSnOz
とBi203の反応が起きず、パイロクロア相が形成さ
れることとなり、バリスタ電圧のバラツキが小さくなり
、また制限電圧特性も優れたものとなる。
Effects of the Invention As described above, the present invention improves SnOz in the sintering reaction process by adding tin in the form of Bl,,Sna○9.
The reaction between Bi203 and Bi203 does not occur, and a pyrochlore phase is formed, resulting in less variation in varistor voltage and excellent limiting voltage characteristics.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は、本発明品と従来品における焼結
体の粒子構造を顕微鏡写真で見た図である。
FIGS. 1 and 2 are microscopic photographs of the grain structures of the sintered bodies of the product of the present invention and the conventional product.

Claims (1)

【特許請求の範囲】[Claims] 酸化亜鉛を主成分とし、この主成分に対して、スズをB
i_2Sn_3O_9に換算して0.01−1.00モ
ル%添加含有してなることを特徴とする電圧非直線抵抗
器。
The main component is zinc oxide, and tin is added to this main component.
A voltage nonlinear resistor characterized in that it is added in an amount of 0.01 to 1.00 mol% in terms of i_2Sn_3O_9.
JP1187877A 1989-07-20 1989-07-20 voltage nonlinear resistor Pending JPH0352201A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1187877A JPH0352201A (en) 1989-07-20 1989-07-20 voltage nonlinear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1187877A JPH0352201A (en) 1989-07-20 1989-07-20 voltage nonlinear resistor

Publications (1)

Publication Number Publication Date
JPH0352201A true JPH0352201A (en) 1991-03-06

Family

ID=16213771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1187877A Pending JPH0352201A (en) 1989-07-20 1989-07-20 voltage nonlinear resistor

Country Status (1)

Country Link
JP (1) JPH0352201A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2530690A1 (en) * 2007-09-28 2012-12-05 Epcos Ag Electric multi-layer element and method for producing an electric multi-layer element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2530690A1 (en) * 2007-09-28 2012-12-05 Epcos Ag Electric multi-layer element and method for producing an electric multi-layer element

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