JPH0352217B2 - - Google Patents
Info
- Publication number
- JPH0352217B2 JPH0352217B2 JP58134030A JP13403083A JPH0352217B2 JP H0352217 B2 JPH0352217 B2 JP H0352217B2 JP 58134030 A JP58134030 A JP 58134030A JP 13403083 A JP13403083 A JP 13403083A JP H0352217 B2 JPH0352217 B2 JP H0352217B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- transmission window
- gas
- wall
- generation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明はマイクロ波プラズマ処理装置にかか
り、特に高性能化のための処理装置の改善に関す
る。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a microwave plasma processing apparatus, and particularly to improvement of the processing apparatus for higher performance.
(b) 従来技術と問題点
半導体製造のプロセス技術として、ドライプロ
セスは半導体装置の微細化、高集積化のために非
常に重要な技術になつてきた。このようなドライ
プロセスにおいて、マイクロ波を利用したプラズ
マ処理が最近導入されつつあり、例えば多結晶シ
リコン膜を四弗化炭素（CF4）＋酸素（O2）ガス
でプラズマエツチングする際に使用されている。
このマイクロ波（2.45GHz）プラズマ処理は従来
の高周波（13.56MHz）を利用したプラズマ処理
に比べて励起効率が向上するメリツトがある。(b) Prior Art and Problems As a process technology for semiconductor manufacturing, dry processing has become an extremely important technology for miniaturization and high integration of semiconductor devices. In such dry processes, plasma processing using microwaves has recently been introduced. For example, it is used when plasma etching polycrystalline silicon films with carbon tetrafluoride (CF 4 ) + oxygen (O 2 ) gas. ing.
This microwave (2.45GHz) plasma treatment has the advantage of improved excitation efficiency compared to conventional plasma treatment using high frequency (13.56MHz).
かようなマイクロ波プラズマ処理用の処理装置
としては、大別してプラズマ発生室（放電室）と
反応室とを分離した分離型と、プラズマ発生室と
反応室とを一体にした一体型との二種類がある
が、何れも反応室内を減圧ないしは真空にする必
要があるから、プラズマ発生部には空気を遮断し
て真空気密を保ち、且つマイクロ波が透過できる
ための透過窓が設けられている。 Processing equipment for such microwave plasma processing can be roughly divided into two types: a separate type in which the plasma generation chamber (discharge chamber) and the reaction chamber are separated, and an integrated type in which the plasma generation chamber and the reaction chamber are integrated. There are different types, but all of them require a reduced pressure or vacuum in the reaction chamber, so the plasma generation section is equipped with a transmission window that blocks air to maintain vacuum tightness and allows microwaves to pass through. .
第１図に分離型のマイクロ波プラズマ処理装置
の一例の概要断面図を示している。１は平板状透
過窓、２は導波管、３はプラズマ発生室、４は反
応室で、プラズマ発生室３と反応室４とはマイク
ロ波を遮断し、プラズマ発生室３で生じた活性種
（ラジカル等）を反応室４へ導入するための格子
（メツシユ）５で仕切られている。６は半導体ウ
エハー（被加工物）、７は排気口である。なお、
１は絶縁体、３，４の収容されている容器及び格
子５は金属（主としてアルミニウム）で作られて
いる。 FIG. 1 shows a schematic sectional view of an example of a separate type microwave plasma processing apparatus. 1 is a flat transmission window, 2 is a waveguide, 3 is a plasma generation chamber, and 4 is a reaction chamber.The plasma generation chamber 3 and the reaction chamber 4 block microwaves, and the activated species generated in the plasma generation chamber 3 are The reaction chamber 4 is partitioned by a mesh 5 for introducing radicals (radicals, etc.) into the reaction chamber 4. 6 is a semiconductor wafer (workpiece), and 7 is an exhaust port. In addition,
Reference numeral 1 is an insulator, and containers 3 and 4 in which they are housed and a grid 5 are made of metal (mainly aluminum).
ところで、プラズマ化されるガスはガス流入管
９によつてプラズマ発生室３内の透過窓直下より
透過窓に向かつて噴射される。これは電界強度の
強い場所にすべてのガスを通して励起効率を良く
するためであるが、同時にこれはガスの当たる透
過窓中央部を冷却することにもなる。しかし、そ
の一方では透過窓はマイクロ波の吸収やプラズマ
との接触により加熱されている（数100℃）から、
ガスが当たる部分とその他の部分との間に温度差
が生じ、透過窓自体に大きなストレス（歪）がか
かることになり、アルミナ等を用いれば破壊され
ることがある。また、石英を透過窓に用いた場
合、破壊は殆ど起こらないが、弗素系ガスによつ
てエツチングされる障害がある。 By the way, the gas to be turned into plasma is injected toward the transmission window from directly below the transmission window in the plasma generation chamber 3 through the gas inflow pipe 9. This is to improve the excitation efficiency by passing all the gas to the area where the electric field strength is strong, but at the same time, this also cools the central part of the transmission window that is hit by the gas. However, on the other hand, the transmission window is heated (several 100 degrees Celsius) by absorption of microwaves and contact with plasma.
A temperature difference occurs between the part exposed to the gas and the other parts, and a large stress (strain) is applied to the transmission window itself, which may break if alumina or the like is used. Furthermore, when quartz is used for the transmission window, destruction hardly occurs, but there is a problem of etching by fluorine-based gas.
又、ガス流入管がが金属性である場合、丁度ス
タツブになつてマイクロ波の反射を起こし、ガス
励起効率の低下やマグネトロンの短命化を招く。 Furthermore, if the gas inlet pipe is made of metal, it becomes a stub and causes reflection of microwaves, leading to a decrease in gas excitation efficiency and a shortened lifespan of the magnetron.
(c) 発明の目的
本発明はこれらの問題点を除去し、改良したマ
イクロ波プラズマ処理装置を提案するものであ
る。(c) Object of the Invention The present invention eliminates these problems and proposes an improved microwave plasma processing apparatus.
(d) 発明の構成
この目的は本発明により金属製容器の上部には
プラズマ発生室が、下部にはプラズマ発生室より
のプラズマで試料をプラズマ処理する反応室が設
けられ、プラズマ発生室の上壁は中央の開孔に気
密に取付けられたマイクロ波を透過する平板状絶
縁体透過窓を介してマイクロ波導波管に結合さ
れ、かつ上壁を含む周囲側壁は間隔をおいて平行
に配置された内壁とともに、透過窓の周囲端のみ
スリツトを有する空間部を構成し、外壁を貫通し
空間部に導かれるガス流入管よりのプラズマ化さ
れるガスは、スリツトから透過窓の中心に向かつ
て放射状に噴射されることを特徴とするマイクロ
波処理装置によつて達成される。(d) Structure of the Invention According to the present invention, a plasma generation chamber is provided in the upper part of a metal container, a reaction chamber is provided in the lower part for plasma-treating a sample with plasma from the plasma generation chamber, and the upper part of the plasma generation chamber is The wall is coupled to the microwave waveguide via a microwave-transmitting flat insulator transmission window airtightly installed in the central opening, and the peripheral side walls including the top wall are arranged in parallel at intervals. Together with the inner wall, a space is formed with a slit only at the peripheral edge of the transmission window, and the gas that is turned into plasma from the gas inflow pipe that penetrates the outer wall and is guided into the space flows radially from the slit toward the center of the transmission window. This is achieved by a microwave processing device that is characterized in that it injects
(e) 発明の実施例
以下、図面を参照して一実施例によつて詳細に
説明すると、第２図は本発明にかかるマイクロ波
プラズマ処理装置の概要断面図である。(e) Embodiment of the Invention Hereinafter, an embodiment will be described in detail with reference to the drawings. FIG. 2 is a schematic sectional view of a microwave plasma processing apparatus according to the present invention.
図示のように、本発明の処理装置は第１図に示
すガス流入管９を設けることなく、プラズマ発生
室３の周囲側壁の内側に内壁１０を設けて、その
外壁１１との空間部に反応ガスを導入する。且
つ、その内壁１０の上部に、Ｏリングを有してお
り透過窓１を保持した上壁１２の開孔に沿つてス
リツト１３を形成し、そのスリツトからプラズマ
化するガスを噴射させる。スリツト幅は0.5mm、
内壁１０の厚さを２mmとすると、このスリツト１
３から透過窓１直下の中心に向かつて放射状にガ
スを噴射することができる。 As shown in the figure, the processing apparatus of the present invention does not require the gas inflow pipe 9 shown in FIG. Introduce gas. Further, a slit 13 is formed in the upper part of the inner wall 10 along an opening in the upper wall 12 which has an O-ring and holds the transmission window 1, and gas to be turned into plasma is injected from the slit. The slit width is 0.5mm,
If the thickness of the inner wall 10 is 2 mm, this slit 1
3, the gas can be injected radially toward the center directly below the transmission window 1.
第３図は第２図のAA断面を示しており、矢印
がガス噴射方向である。導波管２は例えば型名
WRJ−２を用いれば、約55mm×110mmの矩形断面
であるから、図示のような矩形状の透過窓の下に
ガスが噴射されることになる。 FIG. 3 shows the AA cross section of FIG. 2, and the arrow indicates the gas injection direction. For example, the waveguide 2 has a model name
If WRJ-2 is used, it has a rectangular cross section of about 55 mm x 110 mm, so gas will be injected under the rectangular transmission window as shown.
このような本発明による構造にすれば、スリツ
ト１３から噴射したガスは上壁１２に沿つて流れ
るために、上壁１２は冷やされて、透過窓にプラ
ズマ化前のガスが直接接触せず、透過窓を急冷す
ることがなくなる。そして、上壁を通じて透過窓
１は冷却され、マイクロ波吸収により数100℃に
加熱された透過窓を間接に冷却してストレスを緩
和する効果がある。従つて、透過窓をアルミナで
形成しても破損しなくなり、また石英の透過窓で
も低温のためにエツチングされ難くなる。 With such a structure according to the present invention, the gas injected from the slit 13 flows along the upper wall 12, so the upper wall 12 is cooled, and the gas before becoming plasma does not come into direct contact with the transmission window. There is no need to rapidly cool the transmission window. The transmission window 1 is cooled through the upper wall, which has the effect of indirectly cooling the transmission window heated to several hundred degrees Celsius due to microwave absorption and relieving stress. Therefore, even if the transmission window is made of alumina, it will not be damaged, and even if the transmission window is made of quartz, it will be difficult to be etched due to the low temperature.
更に、上記従来例では説明を省いたが、透過窓
１が加熱されるとＯリング８も傷められ、その上
にガスあるいはラジカルとＯリング８とが反応し
てＯリング８もエツチングされる。しかし、この
ようにして上壁１２を冷やせば、Ｏリング８は冷
却されてその悪影響が激減し、Ｏリングの寿命は
２倍に伸びる。 Furthermore, although the explanation is omitted in the above conventional example, when the transmission window 1 is heated, the O-ring 8 is also damaged, and furthermore, the gas or radicals react with the O-ring 8, and the O-ring 8 is also etched. However, if the upper wall 12 is cooled in this way, the O-ring 8 will be cooled and its negative effects will be drastically reduced, and the life of the O-ring will be doubled.
且つ、ガス流入管９を除去すると、スタツブが
無くなつて、マイクロ波の反射がそれだけ防止さ
れ、励起効率が良くなる。これは最大の利点であ
つて、実験によれば反射波は30％から10％に減少
し、それだけ励起効率は向上した。 In addition, when the gas inlet pipe 9 is removed, there is no stub, which prevents reflection of microwaves and improves excitation efficiency. This is the biggest advantage, and according to experiments, the reflected waves have been reduced from 30% to 10%, and the excitation efficiency has improved accordingly.
(f) 発明の効果
以上の説明から明らかなように、本発明によれ
ば励起効率は良くなり、アルミナ製の透過窓も使
用できて、又透過窓その他の部品等は高寿命化
し、マイクロ波プラズマ処理装置が極めて高性能
化されるものである。(f) Effects of the Invention As is clear from the above explanation, according to the present invention, excitation efficiency is improved, a transmission window made of alumina can be used, and the lifespan of the transmission window and other parts is extended, and microwave This greatly improves the performance of plasma processing equipment.
尚、上記実施例は分離型処理装置で説明した
が、本発明にかかる趣旨は一体型処理装置にも適
用できることは云うまでもない。 Although the above embodiment has been explained using a separate type processing apparatus, it goes without saying that the gist of the present invention can also be applied to an integrated type processing apparatus.
第１図は従来のマイクロ波プラズマ処理装置の
概要断面図、第２図は本発明にかかるマイクロ波
プラズマ処理装置の概要断面図、第３図は第２図
のAA断面図である。
図中、１は透過窓、２は導波管、３はプラズマ
発生室、４は反応室、５は格子（メツシユ）、６
は半導体ウエハー、７は排気口、８はＯリング、
９はガス流入管、１０はマイクロ波発生室の内
壁、１１は外壁、１２は上壁、１３はスリツトを
示している。
FIG. 1 is a schematic cross-sectional view of a conventional microwave plasma processing apparatus, FIG. 2 is a schematic cross-sectional view of a microwave plasma processing apparatus according to the present invention, and FIG. 3 is a cross-sectional view AA of FIG. 2. In the figure, 1 is a transmission window, 2 is a waveguide, 3 is a plasma generation chamber, 4 is a reaction chamber, 5 is a grid (mesh), and 6
is a semiconductor wafer, 7 is an exhaust port, 8 is an O-ring,
9 is a gas inflow pipe, 10 is an inner wall of the microwave generation chamber, 11 is an outer wall, 12 is an upper wall, and 13 is a slit.
Claims (1)
部にはプラズマ発生室よりのプラズマで試料をプ
ラズマ処理する反応室が設けられ、プラズマ発生
室の上壁は中央の開孔に気密に取付けられたマイ
クロ波を透過する平板状絶縁体透過窓を介してマ
イクロ波導波管に結合され、かつ上壁を含む周囲
側壁は間隔をおいて平行に配置された内壁ととも
に、透過窓の周囲端のみスリツトを有する空間部
を構成し、外壁を貫通し空間部に導かれるガス流
入管よりのプラズマ化されるガスは、スリツトか
ら透過窓の中心に向かつて放射状に噴射されるこ
とを特徴とするマイクロ波プラズマ処理装置。1 A plasma generation chamber is installed in the upper part of the metal container, and a reaction chamber in which the sample is plasma-treated with plasma from the plasma generation chamber is installed in the lower part.The upper wall of the plasma generation chamber is airtightly attached to the central opening. The peripheral side wall including the upper wall is connected to the microwave waveguide through a flat insulator transmission window that transmits microwaves, and the peripheral side wall including the upper wall is slitted only at the peripheral edge of the transmission window, with an inner wall arranged in parallel at intervals. The microwave is characterized in that the gas that is turned into plasma from the gas inlet pipe that penetrates the outer wall and is guided into the space is injected radially from the slit toward the center of the transmission window. Plasma processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13403083A JPS6025234A (en) | 1983-07-21 | 1983-07-21 | Microwave plasma processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13403083A JPS6025234A (en) | 1983-07-21 | 1983-07-21 | Microwave plasma processor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6025234A JPS6025234A (en) | 1985-02-08 |
| JPH0352217B2 true JPH0352217B2 (en) | 1991-08-09 |
Family
ID=15118732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13403083A Granted JPS6025234A (en) | 1983-07-21 | 1983-07-21 | Microwave plasma processor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6025234A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62222638A (en) * | 1986-03-20 | 1987-09-30 | Fujitsu Ltd | Microwave plasma processing unit |
| JPS62264623A (en) * | 1986-05-13 | 1987-11-17 | Fujitsu Ltd | Microwave plasma processor |
| JPH0770522B2 (en) * | 1987-03-06 | 1995-07-31 | 株式会社日立製作所 | Plasma processing device |
| JPH0475787A (en) * | 1990-07-13 | 1992-03-10 | Sumitomo Metal Ind Ltd | Heat input control method for welding shape steel or steel pipe |
| JP2013186970A (en) * | 2012-03-06 | 2013-09-19 | Ulvac Japan Ltd | Plasma processing device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58202532A (en) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | Microwave plasma discharge tube |
-
1983
- 1983-07-21 JP JP13403083A patent/JPS6025234A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6025234A (en) | 1985-02-08 |
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