JPH035323A - Manufacturing method of fine bismuth oxide - Google Patents

Manufacturing method of fine bismuth oxide

Info

Publication number
JPH035323A
JPH035323A JP13906089A JP13906089A JPH035323A JP H035323 A JPH035323 A JP H035323A JP 13906089 A JP13906089 A JP 13906089A JP 13906089 A JP13906089 A JP 13906089A JP H035323 A JPH035323 A JP H035323A
Authority
JP
Japan
Prior art keywords
bismuth
bismuth oxide
tetroxide
nitric acid
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13906089A
Other languages
Japanese (ja)
Inventor
Isao Abe
功 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP13906089A priority Critical patent/JPH035323A/en
Publication of JPH035323A publication Critical patent/JPH035323A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 ブラウン管内のシャドウマスクの表面塗付用四酸化二ビ
スマスとして最適な微粒酸化ビスマスの製造方法に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for producing fine bismuth oxide, which is optimal as dibismuth tetroxide for coating on the surface of a shadow mask in a cathode ray tube.

〔従来の技術〕[Conventional technology]

酸化ビスマスの用途の一つにブラウン管内に使用される
シャドウマスクの表面塗付用がある。これは、シャドウ
マスクに当る電子線を反射し、発熱を防止することによ
りシャドウマスクのヒズミの発生を防止しようとするも
のである。
One of the uses of bismuth oxide is for coating the surface of shadow masks used in cathode ray tubes. This is intended to prevent distortion of the shadow mask by reflecting electron beams hitting the shadow mask and preventing heat generation.

酸化ビスマスをシャドウマスクに塗付する方法としてて
は酸化ビスマスを水に懸濁させ、水ガラス等を添加して
粘度を調節した後シャドウマスクに吹きつけ、乾燥後焼
付けるのが一般的である。
The common method for applying bismuth oxide to a shadow mask is to suspend the bismuth oxide in water, adjust the viscosity by adding water glass, etc., then spray it onto the shadow mask, dry it, and then bake it. .

このため、塗りむらやスプレーの目づまりを防止し、焼
付けにより緻密な膜を得るために平均粒径が0.2μm
以下の微細で沈降速度の遅い酸化ビスマスが要求されて
いる。
For this reason, in order to prevent uneven coating and clogging of the spray, and to obtain a dense film by baking, the average particle size is 0.2 μm.
The following fine bismuth oxide with slow sedimentation rate is required.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記要求に対して、現状の酸化ビスマスは必ずしも十分
なものとは言えない。すなわち、従来の酸化ビスマスは
硝酸ビスマスに濃厚なアルカリ溶液を作用させて加水分
解することにより、あるいは、オキシ炭酸ビスマスや水
酸化ビスマス等のビスマス塩を加熱分解することにより
得ているが、前者の方法に従えば得られる結晶は平均粒
径5〜10μmの柱状結晶しか得られず、また、後者の
方法においては、原料となるオキシ炭酸ビスマスや水酸
化ビスマス等のビスマス塩の粒径が1〜5μIであり、
ぽい焼しても0.5〜1μI程度のものしか得られない
。このため、シャドウマスク用として用いるためには粉
砕せざるを得ないが、これらの方法で得たものをボール
ミル等により粉砕しても0.5μm以下にはならず、塗
りむらやスプレーの目づまりといった問題を解消できな
い。
Current bismuth oxide is not necessarily sufficient to meet the above requirements. In other words, conventional bismuth oxide is obtained by hydrolyzing bismuth nitrate with a concentrated alkaline solution, or by thermally decomposing bismuth salts such as bismuth oxycarbonate and bismuth hydroxide. If this method is followed, only columnar crystals with an average particle size of 5 to 10 μm can be obtained, and in the latter method, the particle size of bismuth salt such as bismuth oxycarbonate or bismuth hydroxide, which is a raw material, is 1 to 10 μm. 5μI,
Even if it is baked, only about 0.5 to 1 μI can be obtained. For this reason, it has to be crushed in order to be used as a shadow mask, but even if the materials obtained by these methods are crushed with a ball mill, etc., they will not become smaller than 0.5 μm, resulting in uneven coating and clogging of the spray. Such problems cannot be resolved.

本発明は平均粒径が0.2μm以下の微細で沈降速度の
遅い酸化ビスマスの提供を目的とする。
The object of the present invention is to provide fine bismuth oxide having an average particle size of 0.2 μm or less and a slow sedimentation rate.

〔課題を解決するための手段〕[Means to solve the problem]

上記課題を解決するための本発明の酸化ビスマスの製造
方法は、三価のビスマスイオンを含む硝酸溶液に、該硝
酸溶液中のビスマス量に対して1〜3当量の過硫酸塩の
一種または二種以上を添加し、液温を40〜80℃とし
、 pHを8以上に維持しつつ1〜6時間攪はんして四
酸化二ビスマスを得、これを固体分離後乾燥し、次いで
酸素の共存下350〜500℃でばい焼して酸化ビスマ
スを得ることを特徴とするものである。
In order to solve the above problems, the method for producing bismuth oxide of the present invention includes adding one or two persulfates to a nitric acid solution containing trivalent bismuth ions in an amount of 1 to 3 equivalents based on the amount of bismuth in the nitric acid solution. The mixture was stirred for 1 to 6 hours while maintaining the pH at 8 or higher, and the solid was separated and dried. It is characterized in that bismuth oxide is obtained by baking at 350 to 500°C in the coexistence of bismuth.

〔作 用〕[For production]

本発明の方法は硝酸ビスマスを加水分解し、得たオキシ
硝酸ビスマスを湿式酸化して四酸化二ビスマスを得、こ
れをばい焼して三価の酸化ビスマスを得るものであり、
中間体として得られる四酸化二ビスマスが極めて微細で
あるために平均粒径が0.2μm以下の酸化ビスマスが
得られるものである。
The method of the present invention hydrolyzes bismuth nitrate, wet-oxidizes the obtained bismuth oxynitrate to obtain dibismuth tetroxide, and roasts this to obtain trivalent bismuth oxide.
Since bismuth tetroxide obtained as an intermediate is extremely fine, bismuth oxide with an average particle size of 0.2 μm or less can be obtained.

本発明において三価のビスマスイオンを含む硝酸溶液を
原料とするのは、硝酸ビスマス等を溶解すると部分的に
加水分解を起こすためであり、原料として既にオキシ硝
酸ビスマスを含む場合には、これが得られる四酸化ビス
マス中に未反応分として残留し、ぽい焼により粗大酸化
ビスマス粒子を生ずるからである。よって、硝酸に量は
ビスマスの加水分解が防止できる程度であればよい。
In the present invention, a nitric acid solution containing trivalent bismuth ions is used as a raw material because dissolving bismuth nitrate causes partial hydrolysis. This is because it remains as an unreacted component in the bismuth tetroxide produced, and coarse bismuth oxide particles are produced by roasting. Therefore, the amount of nitric acid may be as long as it can prevent hydrolysis of bismuth.

本発明において使用できる過硫酸塩は過硫酸ナトリウム
、過硫酸カリウムそして過硫酸アンモニウムである。過
硫酸塩の添加はpHを調整し、オキシ硝酸ビスマスが生
成した後でもよいが、この時には液温か高くなっており
、過硫酸塩の自己分解が生じやすく、その結果過剰の過
硫酸塩を要することとなるので、昇温前に添加してお(
ことが望ましい。オキシ硝酸ビスマスが未反応のままぽ
い焼されると得られるものの中に粗大な酸化ビスマスが
含まれることとなるので、過硫酸塩の添加量は硝酸ビス
マスと当量以上が必要とされる。しかし、過剰の過硫酸
塩の添加は経済性を悪化させるため3当量以下とするこ
とが望ましい。
Persulfates that can be used in the present invention are sodium persulfate, potassium persulfate and ammonium persulfate. Persulfate may be added after the pH is adjusted and bismuth oxynitrate is produced, but at this time the liquid temperature is high and self-decomposition of persulfate is likely to occur, resulting in the need for an excess of persulfate. Therefore, add it before raising the temperature (
This is desirable. If bismuth oxynitrate is roasted unreacted, coarse bismuth oxide will be included in the resulting product, so the amount of persulfate added must be equal to or greater than that of bismuth nitrate. However, since addition of an excessive amount of persulfate deteriorates economic efficiency, it is desirable to limit the amount to 3 equivalents or less.

液温を40℃以上とするのは、オキシ硝酸ビスマスの生
成を完全とするためであり、またこの酸化を完全に行な
うためである。また、80℃以下とするのはオキシ硝酸
ビスマスや生成する四価のビスマス塩の粒子の凝集や成
長を防止するためであり、過硫酸塩の過剰な自己分析を
防止するためであり、また取扱上の安全性を確保するた
めである。
The reason why the liquid temperature is set to 40° C. or higher is to complete the production of bismuth oxynitrate and to complete the oxidation. In addition, the temperature is set at 80°C or lower to prevent the agglomeration and growth of particles of bismuth oxynitrate and the tetravalent bismuth salt that is generated, and to prevent excessive self-analysis of persulfate. This is to ensure safety.

pHを8以上にするのは、硝酸ビスマスをオキシ硝酸ビ
スマスとして沈殿させるためであり、使用できるアルカ
リは苛性アルカリ、炭酸アルカリ、アンモニア等である
。ところで、上記したようにオキシ硝酸ビスマスは比較
的安定であり、水に加えてスラリーとした後、過硫酸塩
を加え、pHを調整して加熱しても酸化速度は極めて遅
いとされているが、生成したばかりのオキシ硝酸ビスマ
スは反応性も高く、固液分離することなくそのまま酸化
すれば、1時間以上の反応で四酸化二ビスマスに酸化で
きる。オキシ硝酸ビスマスの酸化時間をあまり長くして
も目だった効果はなく、経済性の悪化をきたすのみであ
る。よって、反応時間は1〜6時間とすることが必要で
あり、好ましくは1〜4時間とすることが望ましい。
The reason for setting the pH to 8 or higher is to precipitate bismuth nitrate as bismuth oxynitrate, and usable alkalis include caustic alkali, alkali carbonate, ammonia, and the like. By the way, as mentioned above, bismuth oxynitrate is relatively stable, and even after adding it to water to make a slurry, adding persulfate, adjusting the pH, and heating it, the oxidation rate is said to be extremely slow. The freshly produced bismuth oxynitrate has high reactivity, and if oxidized as it is without solid-liquid separation, it can be oxidized to bismuth tetroxide in a reaction of one hour or more. Even if the oxidation time of bismuth oxynitrate is made too long, there will be no noticeable effect and the economic efficiency will only deteriorate. Therefore, the reaction time needs to be 1 to 6 hours, preferably 1 to 4 hours.

このようにして得た四酸化二ビスマスを固液分離後乾燥
する。
The bismuth tetroxide thus obtained is separated into solid and liquid and then dried.

乾燥した四酸化二ビスマスをばい焼し酸化ビスマスに還
元分解するが、ぽい焼温度が低すぎると還元分解が不十
分となり四酸化二ビスマスが製品に混入し、シャドウマ
スクとして使用された場合にはブラウン管の寿命を短く
する。またぽい焼温度が高いと焼結を起こす。このため
ぽい焼温度は350〜500℃とすることが必要である
Dried bismuth tetroxide is roasted and reductively decomposed into bismuth oxide, but if the roasting temperature is too low, the reductive decomposition is insufficient and dibismuth tetroxide is mixed into the product, which may cause problems when used as a shadow mask. Shorten the life of the cathode ray tube. Also, if the firing temperature is high, sintering will occur. For this reason, it is necessary to set the roasting temperature to 350 to 500°C.

〔実施例1〕 和光純薬製の試薬−級硝酸ビスマス・天水塩200gを
11の10%硝酸溶液に溶解し、KzSzO1171、
1gを添加し、溶解した後、昇温し、60℃になった時
にNaOH131gを11の水に溶解して得た溶液を添
加し、液温80℃で2時間反応させた。なおこのときの
pHは、約12であった。
[Example 1] 200 g of Wako Pure Chemical's reagent-grade bismuth nitrate/natural water salt was dissolved in 11 10% nitric acid solution, and KzSzO1171,
After 1 g was added and dissolved, the temperature was raised and when the temperature reached 60°C, a solution obtained by dissolving 131 g of NaOH in 11 water was added, and the mixture was reacted for 2 hours at a liquid temperature of 80°C. Note that the pH at this time was approximately 12.

生成した四酸化二ビスマスをろ別し、4回のりバルブ洗
浄を行なった。洗浄後100℃で大気乾燥し、97.8
 gのBitOnを得た。次いで、これを400℃で2
時間通気ぽい焼し、95.4 gのβBi2O3を得た
。この酸化ビスマスの粒径をフィッシャー法で測定した
ところ平均0.1μmであった。
The produced dibismuth tetroxide was filtered out and the valve was washed four times. After washing, air dry at 100℃, 97.8
g BitOn was obtained. Next, this was heated at 400℃ for 2
After aerated roasting for an hour, 95.4 g of βBi2O3 was obtained. The particle size of this bismuth oxide was measured by the Fisher method and was found to be 0.1 μm on average.

〔実施例2〕 和光純薬製の試薬−級硝酸ビスマス・天水塩200gを
11の10%硝酸溶液に溶解し、KtS、OH23、4
gを添加し、溶解した後、昇温し、60℃になった時に
NaOH131gを11の水に溶解して得た溶液を添加
し、液温60℃で4時間反応させた。なおこのときのp
Hは、約12であった。
[Example 2] 200 g of reagent-grade bismuth nitrate/natural water salt manufactured by Wako Pure Chemical Industries, Ltd. was dissolved in 11 10% nitric acid solution, and KtS, OH23, 4
After the solution was dissolved, the temperature was raised to 60°C, and when the temperature reached 60°C, a solution obtained by dissolving 131g of NaOH in 11 water was added, and the mixture was reacted for 4 hours at a liquid temperature of 60°C. In addition, p at this time
H was about 12.

生成した四酸化二ビスマスをろ別し、4回のりバルブ洗
浄を行なった。洗浄後80℃で大気乾燥し、96.0 
gのBi2O2を得た。次いで、これを450℃で2時
間通気ぽい焼し93.6 gのβ−Bi20.を得た。
The produced dibismuth tetroxide was filtered out and the valve was washed four times. After washing, air dry at 80℃, 96.0
g of Bi2O2 was obtained. This was then aerated at 450°C for 2 hours and 93.6 g of β-Bi20. I got it.

この酸化ビスマスの粒径をフィッシャー法で測定したと
ころ平均0.1μmであった。
The particle size of this bismuth oxide was measured by the Fisher method and was found to be 0.1 μm on average.

〔実施例3〕 和光純薬製の試薬−級硝酸ビスマス・天水塩200gを
11の10%硝酸溶液に溶解し、K2S20゜71、1
 gを添加し、溶解した後、昇温し、60℃になった時
にNaCOx 171 gを11の水に溶解して得た溶
液を添加し、液温80℃で4時間反応させた。なおこの
ときのp)Iは、約12であった。
[Example 3] 200 g of reagent-grade bismuth nitrate/natural water salt manufactured by Wako Pure Chemical Industries, Ltd. was dissolved in 11 10% nitric acid solution, and K2S20°71,1
After the solution was dissolved, the temperature was raised to 60°C, and when the temperature reached 60°C, a solution obtained by dissolving 171g of NaCOx in 11 parts of water was added, and the mixture was reacted at a liquid temperature of 80°C for 4 hours. Note that p)I at this time was about 12.

生成した四酸化二ビスマスをろ別し、4回のりバルブ洗
浄を行なった。洗浄後80℃で大気乾燥し、98.2 
gのBi204を得た。次いで、これを400℃で1時
間通気ぽい焼し95.8 gのβ−Bi 、0.を得た
。この酸化ビスマスの粒径をフィッシャー法で測定した
ところ平均0.1μmであった。
The produced dibismuth tetroxide was filtered out and the valve was washed four times. After washing, air dry at 80℃, 98.2
g of Bi204 was obtained. This was then aerated at 400° C. for 1 hour and treated with 95.8 g of β-Bi, 0.5 g of I got it. The particle size of this bismuth oxide was measured by the Fisher method and was found to be 0.1 μm on average.

〔発明の効果〕〔Effect of the invention〕

本発明の方法に従えば、中間物として微細なりizO+
を用いるため、平均粒径が0.2μm以下の極めて微細
な酸化ビスマスを簡単に得ることができる。
According to the method of the present invention, fine izO+ is used as an intermediate.
By using this method, extremely fine bismuth oxide having an average particle size of 0.2 μm or less can be easily obtained.

Claims (1)

【特許請求の範囲】[Claims] 三価のビスマスイオンを含む硝酸溶液に、該硝酸溶液中
のビスマス量に対して1〜3当量の過硫酸塩の一種また
は二種以上を添加し、液温を40〜80℃とし、pHを
8以上に維持しつつ1〜6時間攬はんして四酸化二ビス
マスを得、これを固液分離後乾燥し、次いで酸素の共存
下350〜500℃でばい焼して酸化ビスマスを得るこ
とを特徴とする微粒酸化ビスマスの製造方法。
One or more persulfates in an amount of 1 to 3 equivalents based on the amount of bismuth in the nitric acid solution are added to a nitric acid solution containing trivalent bismuth ions, the liquid temperature is adjusted to 40 to 80°C, and the pH is adjusted. 8 or higher for 1 to 6 hours to obtain dibismuth tetroxide, which is separated into solid and liquid, dried, and then roasted at 350 to 500°C in the presence of oxygen to obtain bismuth oxide. A method for producing fine bismuth oxide, characterized by:
JP13906089A 1989-06-02 1989-06-02 Manufacturing method of fine bismuth oxide Pending JPH035323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13906089A JPH035323A (en) 1989-06-02 1989-06-02 Manufacturing method of fine bismuth oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13906089A JPH035323A (en) 1989-06-02 1989-06-02 Manufacturing method of fine bismuth oxide

Publications (1)

Publication Number Publication Date
JPH035323A true JPH035323A (en) 1991-01-11

Family

ID=15236557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13906089A Pending JPH035323A (en) 1989-06-02 1989-06-02 Manufacturing method of fine bismuth oxide

Country Status (1)

Country Link
JP (1) JPH035323A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH111322A (en) * 1997-06-10 1999-01-06 Dowa Mining Co Ltd Bismuth oxide powder and its production
CN106745241A (en) * 2016-11-24 2017-05-31 陕西科技大学 A kind of die-square body Emission in Cubic Bi2O3Crystallite and preparation method thereof
CN108273492A (en) * 2018-04-01 2018-07-13 云南大学 A kind of bismuth oxide/bismuth tetroxide heterojunction photocatalyst and its preparation method and purposes
CN108557881A (en) * 2018-01-15 2018-09-21 俞淼 Method for producing high-purity bismuth oxide from bismuth-containing material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH111322A (en) * 1997-06-10 1999-01-06 Dowa Mining Co Ltd Bismuth oxide powder and its production
CN106745241A (en) * 2016-11-24 2017-05-31 陕西科技大学 A kind of die-square body Emission in Cubic Bi2O3Crystallite and preparation method thereof
CN108557881A (en) * 2018-01-15 2018-09-21 俞淼 Method for producing high-purity bismuth oxide from bismuth-containing material
CN108557881B (en) * 2018-01-15 2020-07-28 俞淼 A kind of method for producing high-purity bismuth oxide from bismuth-containing material
CN108273492A (en) * 2018-04-01 2018-07-13 云南大学 A kind of bismuth oxide/bismuth tetroxide heterojunction photocatalyst and its preparation method and purposes
CN108273492B (en) * 2018-04-01 2022-03-29 云南大学 Bismuth oxide/bismuth tetroxide heterojunction photocatalyst and preparation method and application thereof

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