JPH0353562B2 - - Google Patents

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Publication number
JPH0353562B2
JPH0353562B2 JP58008945A JP894583A JPH0353562B2 JP H0353562 B2 JPH0353562 B2 JP H0353562B2 JP 58008945 A JP58008945 A JP 58008945A JP 894583 A JP894583 A JP 894583A JP H0353562 B2 JPH0353562 B2 JP H0353562B2
Authority
JP
Japan
Prior art keywords
magnetic field
magnetoresistive elements
current paths
series
output terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58008945A
Other languages
Japanese (ja)
Other versions
JPS59133420A (en
Inventor
Tadao Hotsuta
Kunihiko Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aichi Tokei Denki Co Ltd
Original Assignee
Aichi Tokei Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aichi Tokei Denki Co Ltd filed Critical Aichi Tokei Denki Co Ltd
Priority to JP58008945A priority Critical patent/JPS59133420A/en
Publication of JPS59133420A publication Critical patent/JPS59133420A/en
Publication of JPH0353562B2 publication Critical patent/JPH0353562B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/142Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

イ 産業上の利用分野 この場合は回転磁場の回転方向と回転数の検出
装置に用いられる強磁性体磁気抵抗効果素子を用
いた磁場検出用素子に関する。 ロ 従来技術 異方性のある強磁性体磁気抵抗効果素子を用い
た磁場検出用素子として、磁界方向検出に好適な
ものが特公昭57−5067号で公知である。 この磁場検出用素子1は第1図のようにジグザ
グ状の電流通路を有する二つの強磁性体磁気抵抗
効果素子AとBが1枚の基板上に膜として形成さ
れて互に直列に接続され、前記両電流通路の主電
流通路A′とB′が夫々互いにほぼ直交する如く配
置され、両磁気抵抗効果素子A,Bの接続点に出
力端子4を設け、両磁気抵抗効果素子の他端側に
電流供給端子2と3を夫々設け、前記基板の面に
ほぼ平行な磁場成分の方向の変化に応じて両磁気
抵抗効果素子の夫々の抵抗値が変化し、この変化
に伴なう前記出力端子の電圧の変化を検出するよ
うに構成された磁電変換素子であつて、第2図に
示すように抵抗5,6と共にブリツジ回路に接続
されて電流供給端子2,3の間に直流電圧を印加
して利用される。そして前記磁場成分の回転角に
応じて、出力端子4に前記磁場成分の1回転
(360゜)を2周期する第3図のような正弦波状の
出力電圧変化を生じる。7は演算増幅器(OPア
ンプ)で、出力端子4の出力である正弦波信号を
増幅・整形し矩形波にする。 前記磁場成分の回転数を検出するには演算増幅
器7の出力パルスを計数すれば良い。 回転方向の検出をするには、第5図に示すよう
に互にその主電流通路が直角に配置されかつ直列
に接続された磁気抵抗効果素子CとDを前記磁気
抵抗効果素子A,Bと45゜角度をずらして配置し、
第6図のように抵抗9,10と共にブリツジ回路
を構成し、その出力信号を演算増幅器11で増
幅・整形して矩形波にすると、この矩形波出力が
演算増幅器7の矩形波出力と45゜位相(角度)が
ずれることを利用して行なうことができる。具体
的には演算増幅器7と11の出力端子に磁場の回
転方向を判別する検出回路を接続して回転方向の
検出を行なうことが可能であり、このような検出
回路は特開昭54−148578号公報で公知の回路を用
いることができる。 ハ 発明の目的 磁石の回転方向と回転数を検出する磁場検出用
素子は一般に強い磁界が存在する範囲が狭く限ら
れているため、その面積を小さくする必要がある
が、磁気抵抗効果を生じるためには、主電流通路
の巾を一定以上にする必要があり、この巾を小さ
くして前記面積を小さくする素子を小形化するに
は限度がある。 磁場の回転方向と回転数を検出する磁場検出用
素子として第5図のような従来の素子では四つの
磁気抵抗効果素子A,B,C,Dを用いるため磁
気抵抗効果素子一つの面積は素子全体の1/4に限
定される。従つて、素子全体の面積を一定の大き
さに定めると磁気抵抗効果素子一つの面積は前記
一定の面積の1/4に限定され、一素子当りの抵抗
値も前記理由も含めて一定値以下に限定される。
又、素子全体の電気抵抗は素子AとB、CとDが
直列で、A,BとC,Dが並列接続されているた
めに一素子当りの抵抗と同じ値となり、回転方向
を検出する第5図の検出素子は、回転方向の検出
を必要としない第1図の検出素子1に対して一素
子当りの面積を同じとすると2倍の消費電流を消
費する欠点があつた。 この発明は上記にかんがみ、回転方向の検出装
置に使用でき、しかも検出素子全体の電気抵抗値
が大きく消費電流が少ない新規な磁場検出用素子
を提案するのが目的である。 ニ 発明の構成と実施例 上記目的を達成するために、この発明の磁場検
出用素子は、第7図の実施例に示すように、1枚
の基板上に設けられた電気抵抗値がほぼ等しい第
1、第2及び第3の強磁性体磁気抵抗効果素子
A,B,Cが互に直列に接続されており、これら
の磁気抵抗効果素子の電流通路すなわち第1、第
2及び第3の電流通路が夫々ほぼジグザグ状に延
びており、前記第1及び第2の電流通路の主電流
通路A′とB′とが夫々互いにほぼ72゜の角度をなし、
第2及び第3の電流通路の主電流通路B′とC′とが
夫々互いにほぼ72゜の角度をなして配置され、前
記第1と第2の磁気抵抗効果素子AとBとの接続
点に第1の出力端子12が設けられ、前記第2と
第3の磁気抵抗効果素子BとCとの接続点に第2
の出力端子13が設けられ、前記直列に接続され
た第1、第2及び第3の磁気抵抗効果素子の両端
には電流供給端子2,3が夫々設けられ、前記基
板の面にほぼ平行な磁場成分の回転に併ない前記
第1及び第2の出力端子に生じる電圧の変化を検
出するように構成されている。 第8図は夫々の主電流通路A′,B′及びC′が互
になす角度を説明する図であるが、夫々になす角
度は69゜〜74゜程度の範囲が許容される。 一般に、強磁性体磁気抵抗素子の電気抵抗ρ
(θ)は電流と磁化方向が平行になつたとき最大
で、直交したとき最小となり、次の式(Voigt−
Thomsonの式)で表わされる。 ρ(θ)=ρ⊥sin2θ+ρ11cos2θ ……(1) なお、ρは電流と磁化方向のなす角度、ρ⊥は
θ=90゜のときの抵抗値、ρ11はθ=0゜のときの抵
抗値である。又、ρ11>ρ⊥の関係があるのでρ11
−ρ⊥△ρとすると、(1)式は変形して ρ(θ)ρ0+△ρ/2cos2θ ……(2) とかくことができる。なおρ0(ρ⊥+ρ11)/2
である。 今、この発明の磁場検出用素子の解折をするた
め、電気抵抗値がほぼ等しい三つの強磁性体磁気
抵抗効果素子A,B,Cのなす角を、素子BとA
の角をα、素子BとCの角を−αと一般化して表
わす(第12図参照)。素子Bの抵抗値ρB(θ)
は、(1)式から(2)式を導いたのと同様にして、 ρB(θ)=ρB⊥sin2θ+ρB11cos2θ ρ0+△ρ/2cos2θ ……(3) 素子AとCは素子Bに対し角度がαと−αだけず
れているので、同様にして ρA(θ)=ρ0+△ρ/2cos2(θ−α) ……(4) ρC(θ)=ρ0+△ρ/2cos2(θ+α) ……(5) となる。なお ρ0ρA1+ρA11/2ρB1+ρB11/2 ρC1+ρC11/2 である。 従つて、素子A,B及びCを直列接続した抵抗
値Rは R=ρA(θ)+ρB(θ)+ρC(θ) =3ρ0+△ρ/2(1+2cos2α)cos2(θ) ……(6) となる。故に電流供給端子2と3に直流電圧VD
をかけると、第1の出力端子12の電圧V1(θ)
は V1(θ)={ρB(θ)+ρC(θ)}V0/R=V0−ρ
0+△ρ/2cos(2θ−2α)/3ρ0+△ρ/2(1+2c
os2α)cos2θ……(6′) となる。又第2の出力端子13の電圧V2(θ)は V2(θ)=ρC(θ)・V0/R=ρ0+△ρ/2cos(2
θ+2α)/3ρ0+△ρ/2(1+2cos2α)cos2θV0
…(7) となる。今α=72゜とすると、V1(θ),V2(θ)
は V1(θ)=V0−ρ0+△ρ/2cos(2
θ−144゜)/3ρ0−0.31△ρcos2θV0……(8) V2(θ)=ρ0+△ρ/2cos(2θ+1
44゜)/3ρ0−0.31△ρcos2θ……(9) となる。△ρは通常ρ0の2〜5%程度であるの
で、(8)式より電圧V1(θ)は2/3V0を中心として 上下に増減する正弦波状の電圧に、又(9)式より
V2(θ)は1/3V0を中心として上下に増減する正 弦波状の電圧になることがわかる。中心からのそ
れぞれの変化量△V1(θ)と△V2(θ)は △V1(θ)=V1(θ)−2/3V0=−△ρ/2{cos
(2θ−144゜)+0.2cos2θ}/3ρ0−0.31△ρcos2θV
0……(10) △V2(θ)=V2(θ)−1/3V0=△ρ/2{cos(2
θ+144゜)+0.2cos2θ}/3ρ0−0.31△ρcos2θV0
…(11) となる。 この発明では、△V1(θ)が0になるときのθ
の値と、△V2(θ)が0になるをきのθの値とは
位相がほぼ45゜ずれていることが必要である。こ
れを一般的に求めるには、(6′),(7)式から次の連
立方程式を解けばよい(−π2α,2θπ)。 V1(θ)−2/3V0=0 ……(12) V2(θ−45゜)−1/3V0=0 ……(13) 計数の手順を省略し、結論を示すと、解として α±71.57゜±72゜ となり、α=±72゜でV1(θ)とV2(θ)との位相
B. Industrial Application Field In this case, the present invention relates to a magnetic field detection element using a ferromagnetic magnetoresistive element used in a device for detecting the rotation direction and rotation speed of a rotating magnetic field. B. Prior Art A magnetic field detection element using an anisotropic ferromagnetic magnetoresistive element suitable for detecting the direction of a magnetic field is known from Japanese Patent Publication No. 57-5067. As shown in FIG. 1, this magnetic field detection element 1 consists of two ferromagnetic magnetoresistive elements A and B having zigzag current paths formed as films on one substrate and connected in series. , the main current paths A' and B' of the two current paths are arranged so as to be substantially perpendicular to each other, and an output terminal 4 is provided at the connection point of both magnetoresistive elements A and B, and the other end of both magnetoresistive elements Current supply terminals 2 and 3 are respectively provided on the sides, and the respective resistance values of both magnetoresistive elements change according to a change in the direction of the magnetic field component substantially parallel to the surface of the substrate, and the resistance value of each of the magnetoresistive elements changes due to this change. It is a magnetoelectric transducer configured to detect a change in voltage at an output terminal, and is connected to a bridge circuit together with resistors 5 and 6 as shown in FIG. 2 to generate a DC voltage between current supply terminals 2 and 3. It is used by applying . Then, depending on the rotation angle of the magnetic field component, a sinusoidal output voltage change is produced at the output terminal 4, as shown in FIG. 3, with two cycles of one rotation (360 degrees) of the magnetic field component. 7 is an operational amplifier (OP amplifier) which amplifies and shapes the sine wave signal output from the output terminal 4 into a rectangular wave. The number of rotations of the magnetic field component can be detected by counting the output pulses of the operational amplifier 7. To detect the direction of rotation, as shown in FIG. 5, magnetoresistive elements C and D, whose main current paths are arranged at right angles to each other and are connected in series, are connected to the magnetoresistive elements A and B. Arranged at a 45° angle,
As shown in FIG. 6, a bridge circuit is constructed with resistors 9 and 10, and the output signal is amplified and shaped into a rectangular wave by an operational amplifier 11. This rectangular wave output is 45 degrees with the rectangular wave output of the operational amplifier 7. This can be done by taking advantage of the phase (angle) shift. Specifically, it is possible to detect the rotational direction by connecting a detection circuit for determining the rotational direction of the magnetic field to the output terminals of the operational amplifiers 7 and 11. The circuit known in the publication can be used. C. Purpose of the invention Magnetic field detection elements that detect the rotational direction and rotation speed of a magnet generally have a narrow and limited range where a strong magnetic field exists, so their area needs to be reduced; In order to achieve this, it is necessary that the width of the main current path be greater than a certain level, and there is a limit to the ability to reduce the size of the element by reducing this width and thereby reducing the area. In the conventional element as shown in Fig. 5, four magnetoresistive elements A, B, C, and D are used as a magnetic field detection element for detecting the rotational direction and rotation speed of a magnetic field, so the area of one magnetoresistive element is Limited to 1/4 of the total. Therefore, if the area of the entire element is set to a certain size, the area of one magnetoresistive element will be limited to 1/4 of the above-mentioned certain area, and the resistance value per element will also be below a certain value, including the above-mentioned reasons. limited to.
Also, since elements A and B, C and D are connected in series, and A, B and C and D are connected in parallel, the electrical resistance of the entire element is the same as the resistance of each element, and the direction of rotation can be detected. The detection element shown in FIG. 5 has the disadvantage that it consumes twice as much current as the detection element 1 shown in FIG. 1, which does not require rotational direction detection, if the area per element is the same. In view of the above, it is an object of the present invention to propose a novel magnetic field detection element that can be used in a rotational direction detection device and has a large electric resistance value throughout the detection element and consumes little current. D. Structure and Embodiments of the Invention In order to achieve the above object, the magnetic field detection element of the present invention is provided on a single substrate with approximately equal electrical resistance values, as shown in the embodiment of FIG. First, second, and third ferromagnetic magnetoresistive elements A, B, and C are connected in series, and current paths of these magnetoresistive elements, that is, first, second, and third ferromagnetic magnetoresistive elements A, B, and C are connected in series. each current path extends in a substantially zigzag shape, and main current paths A' and B' of the first and second current paths respectively form an angle of approximately 72° with respect to each other;
The main current paths B' and C' of the second and third current paths are arranged at an angle of approximately 72 degrees to each other, and the connection point between the first and second magnetoresistive elements A and B. A first output terminal 12 is provided at the connection point between the second and third magnetoresistive elements B and C.
An output terminal 13 is provided, and current supply terminals 2 and 3 are provided at both ends of the first, second, and third magnetoresistive elements connected in series, and current supply terminals 2 and 3 are provided at both ends of the first, second, and third magnetoresistive elements connected in series, and current supply terminals 2 and 3 are provided at both ends of the first, second, and third magnetoresistive elements connected in series. The device is configured to detect changes in voltage occurring at the first and second output terminals as the magnetic field component rotates. FIG. 8 is a diagram illustrating the angles that the main current paths A', B', and C' make with each other, and the angles that they make are allowed to be in the range of about 69° to 74°. In general, the electrical resistance ρ of a ferromagnetic magnetoresistive element
(θ) is maximum when the current and magnetization direction are parallel, and minimum when they are orthogonal, and is expressed by the following formula (Voigt−
Thomson's equation). ρ (θ) = ρ⊥ sin 2 θ + ρ 11 cos 2 θ ...(1) where ρ is the angle between the current and the magnetization direction, ρ⊥ is the resistance value when θ = 90°, and ρ 11 is θ = 0 This is the resistance value at °. Also, since there is a relationship of ρ 11 > ρ⊥, ρ 11
If −ρ⊥△ρ, equation (1) can be transformed to ρ(θ)ρ 0 +△ρ/2cos2θ ……(2). Note that ρ 0 (ρ⊥+ρ 11 )/2
It is. Now, in order to analyze the magnetic field detection element of this invention, we will calculate the angle formed by three ferromagnetic magnetoresistive elements A, B, and C, which have approximately the same electrical resistance value, by element B and A.
The angle between elements B and C is generalized as α and the angle between elements B and C as -α (see FIG. 12). Resistance value of element B ρ B (θ)
In the same way as formula (2) was derived from formula (1), ρ B (θ) = ρ B ⊥ sin 2 θ + ρ B11 cos 2 θ ρ 0 +△ρ/2cos2θ ...(3) Element A Since the angles of and C are shifted from element B by α and -α, similarly, ρ A (θ) = ρ 0 +△ρ/2cos2 (θ-α) ...(4) ρ C (θ) =ρ 0 +△ρ/2cos2(θ+α)...(5). Note that ρ 0 ρ A1A11 /2ρ B1B11 /2 ρ C1C11 /2. Therefore, the resistance value R when elements A, B, and C are connected in series is R=ρ A (θ) + ρ B (θ) + ρ C (θ) = 3ρ 0 +△ρ/2 (1+2cos2α) cos2 (θ)... …(6) becomes. Therefore, there is a DC voltage V D at current supply terminals 2 and 3.
, the voltage at the first output terminal 12 V 1 (θ)
is V 1 (θ)={ρ B (θ) + ρ C (θ)}V 0 /R=V 0 −ρ
0 +△ρ/2cos(2θ−2α)/3ρ 0 +△ρ/2(1+2c
os2α) cos2θ……(6′). Moreover, the voltage V 2 (θ) of the second output terminal 13 is V 2 (θ)=ρ C (θ)・V 0 /R=ρ 0 +△ρ/2cos(2
θ+2α)/3ρ 0 +△ρ/2(1+2cos2α)cos2θV 0
…(7) becomes. Now if α=72°, V 1 (θ), V 2 (θ)
is V 1 (θ)=V 0 −ρ 0 +△ρ/2cos(2
θ−144゜)/3ρ 0 −0.31△ρcos2θV 0 …(8) V 2 (θ)=ρ 0 +△ρ/2cos(2θ+1
44゜)/3ρ 0 −0.31△ρcos2θ……(9). Since △ρ is usually about 2 to 5% of ρ 0 , from equation (8), voltage V 1 (θ) is a sinusoidal voltage that increases and decreases up and down around 2/3V 0 , and from equation (9) Than
It can be seen that V 2 (θ) becomes a sinusoidal voltage that increases and decreases up and down with 1/3 V 0 as the center. The respective changes from the center △V 1 (θ) and △V 2 (θ) are △V 1 (θ) = V 1 (θ) - 2/3V 0 = -△ρ/2 {cos
(2θ−144°) +0.2cos2θ}/3ρ 0 −0.31△ρcos2θV
0 ...(10) △V 2 (θ) = V 2 (θ) - 1/3V 0 = △ρ/2 {cos (2
θ+144゜)+0.2cos2θ}/3ρ 0 −0.31△ρcos2θV 0
…(11) becomes. In this invention, θ when △V 1 (θ) becomes 0
It is necessary that the phase of the value of θ and the value of θ at which ΔV 2 (θ) becomes 0 is approximately 45°. To find this in general, you can solve the following simultaneous equations from equations (6') and (7) (-π2α, 2θπ). V 1 (θ) - 2/3V 0 = 0 ... (12) V 2 (θ - 45°) - 1/3V 0 = 0 ... (13) Omitting the counting procedure and showing the conclusion, the solution is As α±71.57°±72°, the phase of V 1 (θ) and V 2 (θ) at α=±72°

【表】 角度αが69゜〜74゜の範囲でV1(θ)とV2(θ)の
位相差がほぼ40゜〜50゜の範囲に収まる。 従つて、第7図と第8図に示すように、強磁性
体抵抗効果素子A,B,Cを72゜ずつずらして配
置し、それ等の直列接続の両端2と3に直流電圧
V0をかけると、角度θの変化に対する出力端子
12と13の出力信号は第9図のようになり、
夫々互に45゜位相のずれた正弦波状の電圧変動と
なる。 そのため、第7図の素子1を第10図のように
抵抗14〜17と演算増幅器18,19に接続し
て、素子1の二つの出力端子12,13に表われ
る出力電圧変動分を増幅・整形すると、演算増幅
器18,19の出力端20と21に夫々得られる
第1の出力と第2の出力は、第11図に示すよう
に夫々互にほぼ45゜の位相ずれを有する矩形波と
なる。この両矩形波信号を前記特開昭54−148578
号公報で公知の検出回路に入力して磁場の回転方
向の判別を行なうことができる。又、回転数も従
来と同様に出力パルスを計数して行なうことがで
きる。 ホ 発明の効果 この発明では、三つの磁気抵抗効果素子A,
B,Cが直列に接続されるため、素子全体の(つ
まり磁場検出用素子)電気抵抗は磁気抵抗効果素
子一つ当りの抵抗値の3倍となる。しかも磁場検
出用素子1の面積を従来の第5図のものと同じに
すれば、磁気抵抗効果素子一つ当りの面積が従来
の第5図のものに比し、この発明のものでは4/3
倍にできるため、主電流通路の巾を従来のものと
同じに定めればその長さがほぼ4/3倍となり、磁
気抵抗効果素子一つ当りの抵抗は従来品の4/3倍
となる。従つて磁場検出用素子1としての電気抵
抗を従来品(第5図)の4倍にでき、それだけ消
費電流を低減できる効果がある。なお、第5図の
四つの素子A,B,C及びDの配置を第13図の
ように変え、四つの素子を直列に接続すること
で、全体の合成抵抗を高めることが容易に考えら
れる。この場合の直列抵抗値は本願発明の場合と
同じ値となるが、出力電圧V1(θ)とV2(θ)の
変動分の全振幅Wは W=1/4・△ρ/ρ・V0 となり、この発明の場合の全振幅 W0.28・△ρ/ρ0V0 の方が大きな値を得られる効果がある。 さらに、第13図のように四つの素子を直列接
続したものではV0(θ)とV2(θ)の中心値がそ
れぞれ3/4V0,1/4V0となるが、この発明では2/
3 V0と1/3V0となり、1/2V0により近い値となる。 このことは出力電圧V1(θ),V2(θ)を増減する
演算増幅器の入力可能電圧範囲が、大抵の場合に
おいて1/2V0附近であることを考えると、この発 明の方が有利である。
[Table] When the angle α is in the range of 69° to 74°, the phase difference between V 1 (θ) and V 2 (θ) is approximately within the range of 40° to 50°. Therefore, as shown in FIGS. 7 and 8, ferromagnetic resistance effect elements A, B, and C are arranged offset by 72 degrees, and a DC voltage is applied to both ends 2 and 3 of their series connection.
When multiplied by V 0 , the output signals of output terminals 12 and 13 for changes in angle θ become as shown in Fig. 9,
The voltage fluctuations are sinusoidal waves with a phase shift of 45° from each other. Therefore, the element 1 shown in FIG. 7 is connected to resistors 14 to 17 and operational amplifiers 18 and 19 as shown in FIG. After shaping, the first and second outputs obtained at the output terminals 20 and 21 of the operational amplifiers 18 and 19, respectively, become rectangular waves having a phase shift of approximately 45° from each other, as shown in FIG. Become. These two rectangular wave signals are
The direction of rotation of the magnetic field can be determined by inputting it to a detection circuit known in the publication. Further, the number of rotations can be determined by counting output pulses as in the conventional case. E. Effect of the invention In this invention, three magnetoresistive effect elements A,
Since B and C are connected in series, the electrical resistance of the entire element (that is, the magnetic field detection element) is three times the resistance value of each magnetoresistive element. Moreover, if the area of the magnetic field detection element 1 is the same as that of the conventional one shown in FIG. 3
Since it can be doubled, if the width of the main current path is set to be the same as the conventional one, the length will be approximately 4/3 times, and the resistance per magnetoresistive element will be 4/3 times that of the conventional product. . Therefore, the electrical resistance of the magnetic field detection element 1 can be increased four times that of the conventional product (FIG. 5), and the current consumption can be reduced accordingly. In addition, it is easily possible to increase the overall combined resistance by changing the arrangement of the four elements A, B, C, and D in Figure 5 as shown in Figure 13 and connecting the four elements in series. . The series resistance value in this case is the same as in the case of the present invention, but the total amplitude W of the fluctuation of the output voltages V 1 (θ) and V 2 (θ) is W = 1/4・△ρ/ρ・V 0 , and the total amplitude W0.28·Δρ/ρ 0 V 0 in the case of this invention has the effect of obtaining a larger value. Furthermore, in the case where four elements are connected in series as shown in Fig. 13, the center values of V 0 (θ) and V 2 (θ) are 3/4V 0 and 1/4V 0 , respectively, but in this invention, /
3V 0 and 1/3V 0 , which is a value closer to 1/2V 0 . Considering that the possible input voltage range of operational amplifiers that increase or decrease the output voltages V 1 (θ) and V 2 (θ) is around 1/2 V 0 in most cases, this invention is more advantageous. It is.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の磁場検出用素子の概略を説明す
る図、第2図は第1図の素子を用いた電気回路
図、第3図は第2図の素子で得られる出力電圧を
説明する図、第4図は第2図の演算増幅器7の出
力と素子1の出力を比較説明する図、第5図は従
来の磁場検出用素子の他の例を示す図、第6図は
第5図の素子を用いた電気回路とその出力電圧を
示す図、第7図はこの発明の実施例を示す図、第
8図は第7図のものの主電流通路の角度関係を説
明する図、第9図は第7図のものの出力電圧を説
明する図、第10図は第7図の磁場検出用素子を
使用した電気回路、第11図は第10図の出力電
圧を示す図、第12図はこの発明の原理を解折す
るための説明図、第13図は第5図の従来例を変
形した磁場検出用素子を示す図である。 1……磁場検出用素子、2,3……電流供給端
子、12……第1の出力端子、13……第2の出
力端子、A,B,C……強磁性体磁気抵抗素子、
A′,B′,C′……主電流通路。
Figure 1 is a diagram for explaining the outline of a conventional magnetic field detection element, Figure 2 is an electric circuit diagram using the element in Figure 1, and Figure 3 is for explaining the output voltage obtained with the element in Figure 2. 4 is a diagram for comparing and explaining the output of the operational amplifier 7 in FIG. 2 and the output of the element 1, FIG. 5 is a diagram showing another example of the conventional magnetic field detection element, and FIG. 7 is a diagram showing an embodiment of the present invention. FIG. 8 is a diagram explaining the angular relationship of the main current path of the one shown in FIG. 7. Figure 9 is a diagram explaining the output voltage of the one in Figure 7, Figure 10 is an electric circuit using the magnetic field detection element of Figure 7, Figure 11 is a diagram showing the output voltage of Figure 10, and Figure 12. 13 is an explanatory diagram for explaining the principle of the present invention, and FIG. 13 is a diagram showing a magnetic field detection element that is a modification of the conventional example shown in FIG. 5. 1... Magnetic field detection element, 2, 3... Current supply terminal, 12... First output terminal, 13... Second output terminal, A, B, C... Ferromagnetic magnetoresistive element,
A′, B′, C′…Main current path.

Claims (1)

【特許請求の範囲】[Claims] 1 1枚の基板上に設けられた電気抵抗値がほぼ
等しい第1、第2及び第3の強磁性体磁気抵抗効
果素子A,B,Cが互に直列に接続されており、
これらの磁気抵抗効果素子の電流通路すなわち第
1、第2及び第3の電流通路が夫々ほぼジグザグ
状に延びており、前記第1及び第2の電流通路の
主電流通路A′とB′とが夫々互いにほぼ72゜の角度
をなし、第2及び第3の電流通路の主電流通路
B′とC′とが夫々互いにほぼ72゜の角度をなして配
置され、前記第1と第2の磁気抵抗効果素子Aと
Bとの接続点に第1の出力端子12が設けられ、
前記第2と第3の磁気抵抗効果素子BとCとの接
続点に第2の出力端子13が設けられ、前記直列
に接続された第1、第2及び第3の磁気抵抗効果
素子の両端には電流供給端子2,3が夫々設けら
れ、前記基板の面にほぼ平行な磁場成分の回転に
併ない前記第1及び第2の出力端子に生じる電圧
の変化を検出するように構成された磁場検出用素
子。
1. First, second, and third ferromagnetic magnetoresistive elements A, B, and C having substantially equal electrical resistance values provided on one substrate are connected in series,
The current paths of these magnetoresistive elements, that is, the first, second and third current paths, respectively extend in a substantially zigzag shape, and the main current paths A' and B' of the first and second current paths are connected to each other. are at an angle of approximately 72° to each other, and the main current paths of the second and third current paths
B' and C' are arranged at an angle of approximately 72 degrees to each other, and a first output terminal 12 is provided at a connection point between the first and second magnetoresistive elements A and B,
A second output terminal 13 is provided at the connection point between the second and third magnetoresistive elements B and C, and the second output terminal 13 is provided at both ends of the first, second, and third magnetoresistive elements connected in series. are provided with current supply terminals 2 and 3, respectively, and are configured to detect changes in voltage occurring at the first and second output terminals as the magnetic field component rotates substantially parallel to the surface of the substrate. Magnetic field detection element.
JP58008945A 1983-01-21 1983-01-21 Magnetic field detection element Granted JPS59133420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58008945A JPS59133420A (en) 1983-01-21 1983-01-21 Magnetic field detection element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58008945A JPS59133420A (en) 1983-01-21 1983-01-21 Magnetic field detection element

Publications (2)

Publication Number Publication Date
JPS59133420A JPS59133420A (en) 1984-07-31
JPH0353562B2 true JPH0353562B2 (en) 1991-08-15

Family

ID=11706801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58008945A Granted JPS59133420A (en) 1983-01-21 1983-01-21 Magnetic field detection element

Country Status (1)

Country Link
JP (1) JPS59133420A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01109209A (en) * 1987-10-22 1989-04-26 Ckd Controls Ltd Magnetic sensor for position detection
JPH0258358U (en) * 1988-10-19 1990-04-26
JPH0430489U (en) * 1990-07-07 1992-03-11
JP2008309611A (en) * 2007-06-14 2008-12-25 Panasonic Corp Non-contact position sensor

Also Published As

Publication number Publication date
JPS59133420A (en) 1984-07-31

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