JPH0354844A - Transfer device - Google Patents
Transfer deviceInfo
- Publication number
- JPH0354844A JPH0354844A JP1189892A JP18989289A JPH0354844A JP H0354844 A JPH0354844 A JP H0354844A JP 1189892 A JP1189892 A JP 1189892A JP 18989289 A JP18989289 A JP 18989289A JP H0354844 A JPH0354844 A JP H0354844A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- wafer
- arm
- station
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Automatic Assembly (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は搬送装置に係り,特に半導体製造工程におい
て半導体ウェハ等被搬送体を各工程間で搬送するための
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a transport device, and particularly to a device for transporting objects such as semiconductor wafers between processes in a semiconductor manufacturing process.
[従来の技術]
半導体製造工程においては,無人化、無塵化の要請から
半導体ウェハの自動搬送が一般的であり、特に、いくつ
かの工程を連結したシステムでは半導体ウェハを各工程
間で搬送する自動搬送装置は不可欠である。例えば第4
図に示すような表面処理工程AD、レジスト塗布工程C
T、ベーク工程HP及び冷却工程CLを連結したフォト
レジスト膜形成装置では、ローダ部・アンローダ部工に
連結して複数の処理工程,例えば塗布ステーション2と
、表面処理ステーション3,冷却ステーション4および
加熱ステーション5とを対向配置し、これら対向された
工程間にこのような搬送装置6を設けている。[Prior Art] In the semiconductor manufacturing process, automatic transportation of semiconductor wafers is common due to the demand for unmanned and dust-free processes, and in particular, in systems that connect several processes, it is necessary to transport semiconductor wafers between each process. Automatic transport equipment is essential. For example, the fourth
Surface treatment process AD, resist coating process C as shown in the figure
In a photoresist film forming apparatus that connects the baking process HP and the cooling process CL, the photoresist film forming apparatus connects the loader section and unloader section to perform multiple processing steps, such as coating station 2, surface treatment station 3, cooling station 4 and heating. The stations 5 are arranged facing each other, and such a conveying device 6 is provided between these facing processes.
このフォトレジスト膜形成装置の搬送装置6は、図示し
ない邸動機構によって横方向に移動するキャリツジ61
と、キャリツジ61に取り付けられた2つのバキューム
ピンセット62から或り、これらピンセットは各々独立
にその長手方向、乗直方向及び回転方向に移動可能に構
成されている。The transport device 6 of this photoresist film forming apparatus includes a carriage 61 that moves laterally by a moving mechanism (not shown).
and two vacuum tweezers 62 attached to the carriage 61, each of which is configured to be movable independently in its longitudinal direction, transverse direction, and rotational direction.
そして、例えばローダ部・アンローダ部1のロードポジ
ションエlにあるウェハを1のビンセットで吸着保持し
、表面処理ステーション3に穀送する。最初のウェハが
予備加熱されている間に2番目のウェハ(ローダ部・ア
ンローダ部1において、順次、ロードポジション11に
セットされる)を1のピンセットで吸着保持し,表面処
理ステーション3において表面処理済の最初のウェハを
2のピンセットで吸着保持し、冷却ステーション4に移
送した後、2番目のウェハを表面処理ステーション3に
搬送、載置する。次いで冷却の終了した1枚目のウェハ
を2のピンセットで吸着保持し次の工程のためのステー
ション、例えば塗布ステーション2に搬送する。塗布が
完了したのちのウエハを次の工程のために加熱ステーシ
ョン5へと搬送する。以下、同様に順次各ステーション
間において2つのピンセットによるウェハの受渡しを行
うことにより、各ステーションにおけるウェハの処理が
進行する。Then, for example, a wafer at a load position L of the loader/unloader section 1 is suctioned and held by one set of bins, and is transported to the surface treatment station 3. While the first wafer is being preheated, the second wafer (set in load position 11 in loader/unloader section 1) is held by suction with tweezers 1, and then surface treated at surface treatment station 3. The finished first wafer is held by suction with tweezers 2 and transferred to the cooling station 4, and then the second wafer is transferred to and placed on the surface treatment station 3. Next, the first wafer that has been cooled is held by suction with tweezers 2 and transported to a station for the next process, for example, coating station 2. After coating is completed, the wafer is transferred to heating station 5 for the next process. Thereafter, wafers are sequentially transferred between each station using two tweezers in the same manner, thereby progressing the processing of wafers at each station.
[発明が解決しようとする課題]
ところで、このような半導体ウェハ処理工程においては
、レジスト塗布、加熱露光等のいずれをとってもウェハ
の均一な処理が重要な課題であり、例えば加熱装置では
均一な熱処理を達或すべく,熱容量が大きく、熱分布の
均一性の優れた加熱装置を使用するなどの工夫がなされ
ている。[Problems to be Solved by the Invention] By the way, in such a semiconductor wafer processing process, uniform processing of the wafer is an important issue in both resist coating, heat exposure, etc. For example, uniform heat treatment in a heating device is an important issue. In order to achieve this, efforts have been made to use heating devices with large heat capacity and excellent uniformity of heat distribution.
しかしながら、処理温度のおのおの異なるステーション
間でウェハを搬送するに際し、従来の搬送装置において
は、このような均等に加熱された被搬送体を常温のピン
セットで保持するため,例えば表面処理後のウェハを冷
却ステーションで順次冷却する場合、表面処理ステーシ
ョンの温度が通常ビンセットの常温より高いため、塗布
ステーションへの搬送時にウェハが保持された部分で急
激に温度が下がり被搬送体の均等な温度分布を維持する
ことができない。さらに冷却ステーションからウェハを
加熱ステーションへ搬送する場合には、これと逆の温度
関係によって同様に被搬送体の均等な温度分布を維持す
ることができない。このような温度分布の乱れは塗布工
程で塗布されたレジスト膜の膜厚の均一度に著しい影響
を与える。However, when transferring wafers between stations with different processing temperatures, conventional transfer devices use tweezers to hold the evenly heated objects with room-temperature tweezers. When sequentially cooling the wafer at the cooling station, the temperature at the surface treatment station is usually higher than the room temperature of the bin set, so when the wafer is transferred to the coating station, the temperature drops rapidly in the area where the wafer is held, ensuring an even temperature distribution on the transferred object. cannot be maintained. Furthermore, when wafers are transferred from a cooling station to a heating station, the opposite temperature relationship similarly makes it impossible to maintain an even temperature distribution on the transferred object. Such disturbances in temperature distribution significantly affect the uniformity of the thickness of the resist film applied in the coating process.
又、搬送時、受渡しのために待機している間に被搬送体
を次工程に必要な温度条件まで加熱あるいは冷却して整
えるのに時間がかかる等の問題があった。Further, during transportation, there is a problem that it takes time to heat or cool the transported object to the temperature conditions required for the next process while waiting for delivery.
[発明の目的]
本発明はこのような従来の問題点を解決し、搬送時、被
搬送体の温度低下を防止でき、あるいは被搬送体を予熱
することができる搬送装置を提供すると共に、この搬送
装置が適用されるシステム全体としての製品歩留りの向
上及びシステムの有効活用を図ることを目的とする。[Object of the Invention] The present invention solves these conventional problems and provides a conveyance device that can prevent the temperature of the conveyed object from decreasing or preheat the conveyed object during conveyance. The purpose is to improve the product yield of the entire system to which the conveyance device is applied and to make effective use of the system.
[課題を解決するための手段コ
このような目的を達成する本発明の搬送装置は、被搬送
体を保持部により保持して搬送する装置において、前記
保持部は温度調節機構を有するものである。[Means for Solving the Problems] A conveyance device of the present invention that achieves the above object is a device for conveying a conveyed object while holding it by a holding section, wherein the holding section has a temperature adjustment mechanism. .
[作用]
温度!l5I節機構によって予め所定の温度に設定され
た保持部で被搬送体を保持するので、被搬送体の状態に
応じて、これを加熱あるいは冷却し、被搬送体の温度変
動を緩和することができる。[Effect] Temperature! Since the conveyed object is held in a holding part that is preset to a predetermined temperature by the l5I clause mechanism, it is possible to heat or cool the conveyed object depending on the state of the conveyed object to alleviate temperature fluctuations of the conveyed object. can.
[実施例コ
以下、本発明の搬送装置をフォトレジスト膜形或装置に
適用した一実施例について説明する。[Embodiment 1] An embodiment in which the conveying device of the present invention is applied to a photoresist film type device will be described below.
フォトレジスト膜形成装置100は被処理体であり、且
つ被搬送体である半導体ウェハW(以下、ウェハという
)をロード・アンロードするためのローダ部102と、
対向配置された2列の処理ステーションとから成り、例
えば一方の処理ステーションは表面処理ステーション1
03,冷却ステーション104、第1の加熱ステーショ
ン105及び第2の加熱ステーション106を備え、も
う一方の処理ステーションは第1の塗布ステーション1
07と第2・の塗布ステーション108とを備える。そ
れら2列の処理ステーション間に搬送装置101が備え
られる(第l図)。The photoresist film forming apparatus 100 includes a loader section 102 for loading and unloading a semiconductor wafer W (hereinafter referred to as a wafer), which is an object to be processed and transported;
It consists of two rows of processing stations arranged opposite each other, for example, one processing station is surface processing station 1.
03, comprising a cooling station 104, a first heating station 105 and a second heating station 106, the other processing station being the first application station 1
07 and a second coating station 108. A transport device 101 is provided between these two rows of processing stations (FIG. 1).
ローダ部102には複数の未処理ウエハW8あるいは処
理ウェハWFを収納するカセット122,123が載置
され且つカセット122から未処理ウェハwBを一枚ず
つ取り出しあるいは処理済ウエハW,をカセット123
に収納するためのロボットアーム121が設けられてい
る。Cassettes 122 and 123 storing a plurality of unprocessed wafers W8 or processed wafers WF are placed on the loader section 102, and the unprocessed wafers wB are taken out one by one from the cassette 122, or the processed wafers W are taken out from the cassette 122.
A robot arm 121 is provided for storage in the robot.
表面処理ステーション103、第1の加熱ステーション
105及び第2の加熱ステーション106は例えばウェ
ハWを3点保持するピンと熱板とから或り、熱板はウェ
ハの敞出入時下降し、ウェハの受渡しができるように構
成される。同様に冷却ステーション104は例えばウエ
ハWを3点保持するピンと冷却板とから或り、冷却板は
ウエハの搬出人時下降し、ウエハの受渡しができるよう
に構威される。なお,熱板と冷却板とはおのおの内部に
ヒータ又は冷却手段を備えウエハを所定温度に加熱ある
いは冷却する。The surface treatment station 103, the first heating station 105, and the second heating station 106 are composed of, for example, pins that hold the wafer W at three points and a hot plate. configured to be able to do so. Similarly, the cooling station 104 is composed of, for example, pins that hold the wafer W at three points and a cooling plate, and the cooling plate is configured to be lowered when a person unloads the wafer, so that the wafer can be transferred. Note that the hot plate and the cold plate each have a heater or a cooling means therein to heat or cool the wafer to a predetermined temperature.
塗布ステーション107,108はフォトレジストをウ
ェハ表面に塗布する装置で、例えば回転するチャック上
にウエハを保持し、ウエハ上に滴下されたフォトレジス
トをウエハの回転によって塗布するスピンコータから成
る。The coating stations 107 and 108 are devices for coating the surface of a wafer with photoresist, and include, for example, a spin coater that holds the wafer on a rotating chuck and coats the photoresist dropped onto the wafer by rotating the wafer.
搬送装置101はこれら各ステーションの間に設けられ
、ステッピングモータ及びこれに連結されたボールスク
リュー等の図示しない廓動機構によってY方向に移動す
るキャリジ111と、キャリッジ111に重畳されて取
付けられた2つの保持部であるアーム112、113と
を備える。アーム112、113はキャリツジ111内
に設けられた邸動機構により夫々独立にその長手方向(
Y方向)、前後方向(X方向)、Z(垂直)方向及び0
(回転)方向に移動することができる。The conveying device 101 is provided between these stations, and includes a carriage 111 that moves in the Y direction by a rotating mechanism (not shown) such as a stepping motor and a ball screw connected to the stepping motor, and a carriage 111 that is attached to the carriage 111 in a superimposed manner. Arms 112 and 113 are two holding parts. The arms 112 and 113 are moved independently in the longitudinal direction (
Y direction), front-back direction (X direction), Z (vertical) direction and 0
(rotational) direction.
このようなキャリッジ111及びアーム112、113
の廓動は図示しない制御システムによって制御される。Such a carriage 111 and arms 112, 113
The movement of is controlled by a control system (not shown).
これらアーム112、113は第2図に示すようにウェ
ハを吸着するための2つの吸着孔113aを有し、これ
ら吸着孔はアーム中空部を介して図示しない真空系に連
結されている(アーム112も同様である).
更に、アーム112、113はその表面に絶縁H!J2
01.薄膜発熱体200及び絶縁層201が積層され,
薄膜発熱体に通電することにより発熱するように構或さ
れる(第3図)。また、これらアーム112、113の
内部にはそれぞれ冷却コイル203が埋設されている。As shown in FIG. 2, these arms 112 and 113 have two suction holes 113a for suctioning a wafer, and these suction holes are connected to a vacuum system (not shown) through a hollow part of the arms. The same is true). Furthermore, the arms 112, 113 have insulation H! on their surfaces. J2
01. A thin film heating element 200 and an insulating layer 201 are laminated,
It is designed to generate heat by energizing the thin film heating element (FIG. 3). Furthermore, cooling coils 203 are embedded inside each of these arms 112 and 113.
上記の薄膜発熱体200および冷却コイル203は温度
調節機構をなすもので、薄膜発熱体200への通電によ
る加熱と冷却コイル203への通水とを、温度調節器2
04によって加減して目的の温度調節を行う。The thin film heating element 200 and the cooling coil 203 described above constitute a temperature adjustment mechanism, and the heating by energizing the thin film heating element 200 and the water flow to the cooling coil 203 are controlled by the temperature controller 2.
04 to adjust the desired temperature.
このような薄膜発熱体としては、ニッケル,白金、クロ
ム,タンタル、タングステン、スズ、鉄、鉛、アルメル
,ベリリウム、アンチモン、インジウム、クロメル、コ
バルト、ストロンチウム、ロジウム、パラジウム、マグ
ネシウム、モリブデン、リチウム、ルビシウム等の金属
単体およびカーボンブラック,グラファイト等の炭素系
単体の他、ニクロム,ステンレスSUS、青銅、黄銅等
の合金、ポリマーグラフトカーボン等のポリマー系複合
材料、ケイ化モリブデン等の複合セラミック材料を含め
、導電性を有し通電により抵抗発熱体となりうるものな
らば何れも好適に使用でき、発熱温度に応じて適切な材
質を選択すればよい。これらはアームの表面に蒸着、溶
射、爆射等の方法により膜厚0.1〜1000μm、好
ましくは1〜100μmに成膜される。この薄膜発熱体
は熱容量が小さいので、印加電圧を変化させることによ
り応答性よく、温度を変化させることができる。Such thin film heating elements include nickel, platinum, chromium, tantalum, tungsten, tin, iron, lead, alumel, beryllium, antimony, indium, chromel, cobalt, strontium, rhodium, palladium, magnesium, molybdenum, lithium, and rubicium. In addition to metals such as carbon black and graphite, alloys such as nichrome, stainless steel, bronze, and brass, polymer composite materials such as polymer grafted carbon, and composite ceramic materials such as molybdenum silicide, Any material that has conductivity and can become a resistance heating element when energized can be suitably used, and an appropriate material may be selected depending on the heating temperature. These are formed into a film with a thickness of 0.1 to 1000 μm, preferably 1 to 100 μm, on the surface of the arm by a method such as vapor deposition, thermal spraying, or explosion. Since this thin film heating element has a small heat capacity, the temperature can be changed with good responsiveness by changing the applied voltage.
このような薄膜発熱体200は少なくともウエハが吸着
保持される部分に設けられていればよいが、好適にはウ
ェハが保持される部分の表面と裏面とに発熱体を設ける
と共に、表面の薄膜発熱体と裏面の発熱体とをアームの
先端のみで連:続し,アームの基部の表面に一対の電極
202を設け、この電極に所定電源の電圧を印加する。Such a thin film heating element 200 may be provided at least on the part where the wafer is held by suction, but it is preferable that the heating element is provided on the front and back surfaces of the part where the wafer is held, and the thin film heating element on the front surface is also provided. The body and the heating element on the back side are connected only at the tip of the arm, and a pair of electrodes 202 are provided on the surface of the base of the arm, and a voltage of a predetermined power source is applied to these electrodes.
これによりアーム表面の薄膜発熱体をほぼ均等に電流が
流れることになるので,アーム表面が均一な温度で発熱
することになる。This allows current to flow almost evenly through the thin film heating element on the arm surface, so the arm surface generates heat at a uniform temperature.
尚、薄膜発熱体上下に設けられる絶縁層201は電気#
fA縁性に優れ、熱伝導性が良好なつまり遠赤外線を放
射し易い材質のものならば何れも使用可能であって、ア
ルミナ、ジルコニア、炭化ケイ素、窒化ケイ素、ダイヤ
モンド等に代表されるセラミックスの他、石英、ルチル
等の金mH化物、耐熱性のよいテフロン等のプラスチッ
クスも使用可能である。これらは溶射、爆射等により膜
厚例えば10〜1000μ一に或形される。Note that the insulating layer 201 provided above and below the thin film heating element is
Any material can be used as long as it has excellent fA affinity and good thermal conductivity, that is, it easily emits far infrared rays. Ceramics such as alumina, zirconia, silicon carbide, silicon nitride, diamond, etc. In addition, gold mHides such as quartz and rutile, and plastics with good heat resistance such as Teflon can also be used. These are formed into a film thickness of, for example, 10 to 1000 μm by thermal spraying, explosion spraying, etc.
以上のような構成において、例えば「予備加熱−冷却−
レジスト塗布一加熱一加熱」という処理工程を遂行する
場合、ますローダ部102ではロボットアーム121に
よってカセット122内の未処理ウェハwBが取り出さ
れ、チャックに保持される。次いで搬送装置101の1
のアーム113が所定のX.Y.Z方向の運動を行ない
、チャックに保持されていた一番目の未処理ウエハを保
持する。この時、1のアーム113はその発熱体に通電
することにより表面処理ステーション103と同じ温度
に設定されているので、未処理ウエハはアーム113に
より保持されたと同時に予備加熱が開始する。このウエ
ハを保持したアーム113を回転し、更にx,y.z方
向に所定移動することにより、表面処理ステーション1
03のピン上にウェハを載置する。表面処理ステーショ
ン103では熱板が上昇し所定の表面処理を行う。In the above configuration, for example, "preheating-cooling-
When carrying out the process of "resist coating - heating - heating", in the loader section 102, the robot arm 121 takes out the unprocessed wafer wB from the cassette 122 and holds it on a chuck. Next, 1 of the conveying device 101
The arm 113 of the X. Y. A movement in the Z direction is performed to hold the first unprocessed wafer held on the chuck. At this time, the first arm 113 is set to the same temperature as the surface treatment station 103 by energizing its heating element, so that the unprocessed wafer is held by the arm 113 and preheating starts at the same time. The arm 113 holding this wafer is rotated, and further x, y. By moving a predetermined amount in the z direction, the surface treatment station 1
Place the wafer on pins 03. At the surface treatment station 103, a hot plate is raised to perform a predetermined surface treatment.
この間にローダ部102では2番目の未処理ウェハWB
がロボットアーム121によりチャック上に搬送されて
いるので、前述のように搬送装置のアーム113でこれ
を保持し、1番目のウエハの表面処理の終了まで待機す
る。この間も次のウェハはアーム113によって予備加
熱されている。During this time, the second unprocessed wafer WB is loaded in the loader section 102.
Since the wafer is being transferred onto the chuck by the robot arm 121, it is held by the arm 113 of the transfer device as described above and waits until the surface treatment of the first wafer is completed. During this time as well, the next wafer is being preheated by the arm 113.
表面処理後、ウェハを常温のアーム112で取り出し冷
却ステーション104に載置すると共に、待機していた
未処理ウエハをアーム113により表面処理ステーショ
ン103に搬入する。After the surface treatment, the wafer is taken out by the arm 112 at room temperature and placed on the cooling station 104, and the waiting unprocessed wafer is carried into the surface treatment station 103 by the arm 113.
次に冷却ステーション104から塗布ステーション10
7,108への搬送は常温で行なう方が好ましいので、
アームの発熱体が常温になるように温度調節しつつ搬送
する。Next, from the cooling station 104 to the coating station 10
It is preferable to carry out transportation to 7,108 at room temperature,
The temperature is adjusted so that the heating element on the arm reaches room temperature during transportation.
すなわち、1のアーム112で冷却ステーション104
上のウェハを保持すると共に、2のアーム113で表面
処理ステーション103上のウエハを冷却ステーション
104上に載置する。1のアーム112に保持されたウ
ェハを例えは?!!布ステーション107に搬送し、塗
布ステーションlO7のチャックに載置する。That is, one arm 112 connects the cooling station 104.
While holding the upper wafer, the second arm 113 places the wafer on the surface treatment station 103 on the cooling station 104. What is the example of a wafer held in arm 112 of No. 1? ! ! It is transported to cloth station 107 and placed on the chuck of coating station IO7.
レジスト塗布後のウエハを加熱ステーションlO5に搬
送する時及び第1の加熱ステーション105から第2の
加熱ステーション106に殿送丁る時はいずれも再びア
ームの発熱体にjfflitEし. 7Jl+熱しなが
ら搬送する。これにより塗布ステーション107から加
熱ステーション105の間ではウェハの予備加熱が行わ
れ、又,第1の加熱ステ−ション105から第2の加熱
ステーション106ではウェハの加熱状態が維持された
状態で搬送されるのでウェハは搬送中に急激に冷めるこ
とがなく、特に常温のピンセットで保持された場合の急
激な温度変化を防止することができる。When the wafer after resist coating is transferred to the heating station IO5 and when the wafer is transferred from the first heating station 105 to the second heating station 106, the heating element of the arm is again heated. 7Jl + Transport while heating. As a result, the wafer is preheated between the coating station 107 and the heating station 105, and the wafer is transported from the first heating station 105 to the second heating station 106 while being kept heated. Therefore, the wafer does not cool down rapidly during transportation, and in particular, rapid temperature changes when held with tweezers at room temperature can be prevented.
尚、以上の実施例では搬送装置の2つのアームのみに発
熱体を設けた例を説明したが、ローダ部の搬送機構であ
るロボットアームの保持部にもこのような発熱体を設け
,カセットから取り出したウェハを直ちに予備加熱する
構成とすることができるのはいうまでもない。In the above embodiment, only two arms of the transfer device were provided with heating elements, but such a heating element was also provided in the holding section of the robot arm, which is the transfer mechanism of the loader section, so that the transfer from the cassette to Needless to say, the wafer can be preheated immediately after being taken out.
又、本実施例については被搬送体の保持部として真空吸
着式のアームを用い,又,発熱体として薄膜発熱体を用
いた例を説明したが、保持部及び発熱体は本実施例に限
定されるものではなく,特許請求の範囲に記載される範
囲で自由に変更できる.
[発明の効果]
以上の説明からも明らかなように本発明の搬送装置によ
れば、被搬送体の保持部に温度調節機構を設けたので、
被搬送体の温度を変動させずに搬送することができ、又
,必要に応じ被搬送体を予備加熱あるいは冷却すること
ができる。Furthermore, in this example, an example was explained in which a vacuum adsorption type arm was used as the holding part for the transported object, and a thin film heating element was used as the heating element, but the holding part and the heating element are limited to this example. It is not intended to be used in any other way, but may be freely modified within the scope of the claims. [Effects of the Invention] As is clear from the above description, according to the conveyance device of the present invention, since the temperature adjustment mechanism is provided in the holding portion of the conveyed object,
The object to be transported can be transported without changing its temperature, and the object to be transported can be preheated or cooled as necessary.
従って、本発明の搬送装置は加熱処理を伴う処理装置,
特に半導体製造装置において有用である。Therefore, the conveying device of the present invention is a processing device that involves heat treatment,
It is particularly useful in semiconductor manufacturing equipment.
更に、発熱体として薄膜発熱体を用いた場合には通電の
有無あるいは通電量によって搬送部を冷却しつつ、搬送
部の温度を応答性良く変えることができるので多種工程
を連結した統合処理システムの搬送装置として好適であ
る。Furthermore, when a thin film heating element is used as the heating element, the temperature of the transporting part can be changed in a responsive manner while cooling the transporting part depending on the presence or absence of energization or the amount of energization, making it possible to use integrated processing systems that connect various processes. It is suitable as a conveyance device.
第1図は本発明の搬送装置が適用される半2g体処理装
置の一実施例を示す構成図、第2図及び第3図はそれぞ
れ本発明の搬送装置の保持部の一実施例を示す平面図及
び断面図,第4図は従来の倣送装nを示す図である。
101・・・・・搬送賃置FIG. 1 is a block diagram showing an embodiment of a semi-2g body processing apparatus to which the transport device of the present invention is applied, and FIGS. 2 and 3 each show an embodiment of the holding part of the transport device of the present invention. A plan view, a cross-sectional view, and FIG. 4 are diagrams showing a conventional copy feeding device n. 101...Transportation rental
Claims (1)
て、前記保持部は温度調節機構を有することを特徴とす
る搬送装置。What is claimed is: 1. A device for transporting an object while holding it by a holding section, wherein the holding section has a temperature adjustment mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18989289A JP2717108B2 (en) | 1989-07-21 | 1989-07-21 | Resist treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18989289A JP2717108B2 (en) | 1989-07-21 | 1989-07-21 | Resist treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0354844A true JPH0354844A (en) | 1991-03-08 |
| JP2717108B2 JP2717108B2 (en) | 1998-02-18 |
Family
ID=16248931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18989289A Expired - Fee Related JP2717108B2 (en) | 1989-07-21 | 1989-07-21 | Resist treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2717108B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992019011A1 (en) * | 1991-04-22 | 1992-10-29 | Semiconductor Process Laboratory Co., Ltd. | Apparatus and method for manufacturing semiconductor device |
| JPH07161632A (en) * | 1993-07-16 | 1995-06-23 | Semiconductor Syst Inc | Heat treatment module for substrate coating / developing system |
| KR20010019206A (en) * | 1999-08-25 | 2001-03-15 | 윤종용 | Wafer handling apparatus used in a semiconductor manufacturing process |
| US6488778B1 (en) * | 2000-03-16 | 2002-12-03 | International Business Machines Corporation | Apparatus and method for controlling wafer environment between thermal clean and thermal processing |
| EP1152456A3 (en) * | 2000-05-04 | 2009-04-29 | Applied Materials, Inc. | Method and apparatus for robots having temperature sensitive applications |
| JP2010034568A (en) * | 2009-09-16 | 2010-02-12 | Lintec Corp | Transfer apparatus and transfer method |
| WO2011035041A3 (en) * | 2009-09-16 | 2011-08-18 | Applied Materials, Inc. | Substrate transfer mechanism with preheating features |
| WO2013179489A1 (en) * | 2012-06-01 | 2013-12-05 | 株式会社島津製作所 | Substrate placing apparatus and substrate placing method |
| CN114496901A (en) * | 2022-04-15 | 2022-05-13 | 拓荆科技(北京)有限公司 | Manipulator applied to coating equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62129846A (en) * | 1985-12-02 | 1987-06-12 | Dainippon Screen Mfg Co Ltd | Method and apparatus for coating photoresist |
| JPS6312126A (en) * | 1986-05-19 | 1988-01-19 | マシン テクノロジ− インコ−ポレイテツド | Prefabricated treating system |
| JPS6368378A (en) * | 1986-09-10 | 1988-03-28 | パイオニア株式会社 | Working device for planar member |
| JPS6378546A (en) * | 1986-09-22 | 1988-04-08 | Hitachi Ltd | wafer handling equipment |
| JPS63316428A (en) * | 1987-06-18 | 1988-12-23 | Nec Corp | Soft landing system for heat treatment furnace of semiconductor wafer |
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1989
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62129846A (en) * | 1985-12-02 | 1987-06-12 | Dainippon Screen Mfg Co Ltd | Method and apparatus for coating photoresist |
| JPS6312126A (en) * | 1986-05-19 | 1988-01-19 | マシン テクノロジ− インコ−ポレイテツド | Prefabricated treating system |
| JPS6368378A (en) * | 1986-09-10 | 1988-03-28 | パイオニア株式会社 | Working device for planar member |
| JPS6378546A (en) * | 1986-09-22 | 1988-04-08 | Hitachi Ltd | wafer handling equipment |
| JPS63316428A (en) * | 1987-06-18 | 1988-12-23 | Nec Corp | Soft landing system for heat treatment furnace of semiconductor wafer |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992019011A1 (en) * | 1991-04-22 | 1992-10-29 | Semiconductor Process Laboratory Co., Ltd. | Apparatus and method for manufacturing semiconductor device |
| JPH07161632A (en) * | 1993-07-16 | 1995-06-23 | Semiconductor Syst Inc | Heat treatment module for substrate coating / developing system |
| US5935768A (en) * | 1993-07-16 | 1999-08-10 | Semiconductor Systems, Inc. | Method of processing a substrate in a photolithography system utilizing a thermal process module |
| KR20010019206A (en) * | 1999-08-25 | 2001-03-15 | 윤종용 | Wafer handling apparatus used in a semiconductor manufacturing process |
| US6488778B1 (en) * | 2000-03-16 | 2002-12-03 | International Business Machines Corporation | Apparatus and method for controlling wafer environment between thermal clean and thermal processing |
| EP1152456A3 (en) * | 2000-05-04 | 2009-04-29 | Applied Materials, Inc. | Method and apparatus for robots having temperature sensitive applications |
| JP2010034568A (en) * | 2009-09-16 | 2010-02-12 | Lintec Corp | Transfer apparatus and transfer method |
| WO2011035041A3 (en) * | 2009-09-16 | 2011-08-18 | Applied Materials, Inc. | Substrate transfer mechanism with preheating features |
| WO2013179489A1 (en) * | 2012-06-01 | 2013-12-05 | 株式会社島津製作所 | Substrate placing apparatus and substrate placing method |
| CN104321857A (en) * | 2012-06-01 | 2015-01-28 | 株式会社岛津制作所 | Substrate transfer device and substrate transfer method |
| JPWO2013179489A1 (en) * | 2012-06-01 | 2016-01-18 | 株式会社島津製作所 | Substrate transfer apparatus and substrate transfer method |
| CN114496901A (en) * | 2022-04-15 | 2022-05-13 | 拓荆科技(北京)有限公司 | Manipulator applied to coating equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2717108B2 (en) | 1998-02-18 |
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