JPH035643B2 - - Google Patents
Info
- Publication number
- JPH035643B2 JPH035643B2 JP58046307A JP4630783A JPH035643B2 JP H035643 B2 JPH035643 B2 JP H035643B2 JP 58046307 A JP58046307 A JP 58046307A JP 4630783 A JP4630783 A JP 4630783A JP H035643 B2 JPH035643 B2 JP H035643B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- magnet
- magnetic
- substrate
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Description
産業上の利用分野
本発明は薄膜磁性体の作製法、特に軟磁気特性
にすぐれた磁性合金膜を高いスパツターレートで
作製することを可能にする方法に関するものであ
る。
従来例の構成とその問題点
従来より高速スパツター法としては第1図aに
示したようなマグネトロンスパツター法が使用さ
れている。図において、1は基板、2はターゲツ
ト、3は磁石、4は非磁性体である。この方法は
スパツターレートが高いという利点を有するもの
の、磁性を有する厚いターゲツトを用いる場合、
磁石の磁束が漏れないため、効果を発揮しない。
このような場合、第1図bに示したようにターゲ
ツト2に細い溝を入れておくことにより磁石の磁
束を漏らし、スパツターレートを向上させる工夫
がなされている。しかしながら、このような方法
は実施するのが極めて面倒であり、特にターゲツ
トの加工性が悪い場合には有効でない。そして、
従来、パーマロイや非晶質磁性合金等はスパツタ
ー直後にはさほど軟磁気特性が良くなく、特性の
改良には熱処理を必要としていた。しかし熱に弱
いレジスト膜を設けなければならず、デバイスに
これら軟磁性合金膜を用いる場合には、熱処理に
よる特性改善が困難であるため、十分に膜の特性
を生かすことができないのが実情であつた。
発明の目的
本発明はこれら二つの問題点を一挙に解決し優
れた軟磁気特性を示す合金膜を高速スパツターす
ることを可能にした方法を提供することを目的と
するものである。
発明の構成
本発明は、基板ホルダーとターゲツトが対向し
ているスパツター装置を用いて磁性合薄膜を作製
する際に、基板ホルダーとターゲツトとの間にN
極とS極とが一定距離をへだてて対向するように
磁石を置き、その磁束の方向がターゲツトの面内
及び基板の面内方向にほぼ平行となるようにし、
かつスパツター中にこの磁石を回転させることに
より、スパツターレートを向上させると同時に優
れた軟磁気特性を有する薄膜磁性体の作製を可能
にしたものである。
実施例の説明
第2図を用いて本発明の方法の一実施例につい
て述べる。同図aは装置の要部平面図、同bは側
面断面図である。
図において、11は基板、12はN極とS極が
相対向しておかれた磁石、13は磁石12の支持
台で、その下に設けられたベアリング14を有す
る支持台15の上を駆動機構16により低速回転
できるようになつている。17はターゲツト、1
8はターゲツト電極である。磁石12の磁束は同
図b中に示したように、N極から出て一部分がタ
ーゲツト17内に入り、またわずかながらスパツ
ターされた基板11上の磁性体内に入りS極へ向
かう。この時、磁石2は駆動機構6により回転す
るので、スパツターされた基板1上の磁性体には
回転磁界が加わり、これにより磁気異方性が磁性
体膜面内に誘導されるのを防ぎ、磁性体の軟磁気
特性の向上に寄与するようになつている。一方、
磁石12が回転することにより、ターゲツト17
面は均一にスパツターさらるほか、これにより出
る磁束により放電の際のプラズマ濃度が上り、ス
パツターレートが向上する。なお、ターゲツト1
7内に磁束が入るのを防ぎ、さらにスパツターレ
ートを上昇させたい場合には図中bの18の部分
に第1図aの磁石3のような磁石を置き、ターゲ
ツト17を磁気的に飽和させてしまえばより効果
的である。
以下、具体例により本発明の効果を示す。
例 1
真空容器内を2×10-7Torrまで排気した後、
Arガス圧2×10-2Torrで、十分水冷されたガラ
ス基板上にCo85Fe2Nb13なる組成の非品質合金を
第2図に示したようなスパツター装置を利用して
作製した。この、比較のため、磁石2を回転せず
に固定した場合、及び磁石2を使用しない場合の
実験もあわせて行なつた。1時間スパツターした
後の膜厚及びその100KHzおける合金膜の初透磁
率μiを測定した。
結果を第1表にまとめて示す。
INDUSTRIAL APPLICATION FIELD The present invention relates to a method for producing a thin magnetic film, and in particular to a method that makes it possible to produce a magnetic alloy film with excellent soft magnetic properties at a high sputter rate. Structure of conventional example and its problems Conventionally, a magnetron sputter method as shown in FIG. 1a has been used as a high-speed sputter method. In the figure, 1 is a substrate, 2 is a target, 3 is a magnet, and 4 is a non-magnetic material. Although this method has the advantage of a high sputter rate, when using a thick magnetic target,
It is not effective because the magnetic flux of the magnet does not leak.
In such a case, as shown in FIG. 1b, a narrow groove is formed in the target 2 to leak the magnetic flux of the magnet and improve the sputter rate. However, such methods are extremely cumbersome to carry out and are not effective, especially when the target is poorly processable. and,
Conventionally, permalloy and amorphous magnetic alloys did not have very good soft magnetic properties immediately after sputtering, and required heat treatment to improve their properties. However, it is necessary to provide a resist film that is sensitive to heat, and when using these soft magnetic alloy films in devices, it is difficult to improve the characteristics through heat treatment, so the reality is that the characteristics of the film cannot be fully utilized. It was hot. OBJECTS OF THE INVENTION It is an object of the present invention to provide a method that solves these two problems at once and makes it possible to sputter an alloy film exhibiting excellent soft magnetic properties at high speed. Structure of the Invention The present invention provides a method for producing a magnetic composite thin film using a sputtering device in which a substrate holder and a target face each other.
A magnet is placed so that the pole and south pole face each other with a certain distance apart, and the direction of the magnetic flux is approximately parallel to the in-plane direction of the target and the substrate,
By rotating this magnet during sputtering, it is possible to improve the sputtering rate and at the same time produce a thin film magnetic material having excellent soft magnetic properties. DESCRIPTION OF EMBODIMENTS An embodiment of the method of the present invention will be described with reference to FIG. Figure a is a plan view of the main part of the device, and figure b is a side sectional view. In the figure, 11 is a substrate, 12 is a magnet with N and S poles facing each other, and 13 is a support for the magnet 12, which is driven on a support 15 with a bearing 14 provided below. A mechanism 16 allows for low speed rotation. 17 is the target, 1
8 is a target electrode. As shown in FIG. 1B, the magnetic flux of the magnet 12 exits from the north pole, a portion of which enters the target 17, and a small amount of which enters the magnetic body on the sputtered substrate 11 and heads toward the south pole. At this time, the magnet 2 is rotated by the drive mechanism 6, so a rotating magnetic field is applied to the sputtered magnetic material on the substrate 1, thereby preventing magnetic anisotropy from being induced in the plane of the magnetic material film. It has come to contribute to improving the soft magnetic properties of magnetic materials. on the other hand,
As the magnet 12 rotates, the target 17
In addition to sputtering the surface uniformly, the resulting magnetic flux increases the plasma concentration during discharge, improving the sputter rate. In addition, target 1
If you want to prevent magnetic flux from entering the target 17 and further increase the sputter rate, place a magnet like magnet 3 in Figure 1a at part 18 in b in the figure to magnetically saturate the target 17. It will be more effective if you let it happen. Hereinafter, the effects of the present invention will be illustrated by specific examples. Example 1 After evacuating the inside of the vacuum container to 2×10 -7 Torr,
A non-quality alloy having a composition of Co 85 Fe 2 Nb 13 was prepared on a sufficiently water-cooled glass substrate at an Ar gas pressure of 2×10 -2 Torr using a sputtering apparatus as shown in FIG. 2. For comparison, experiments were also conducted in which the magnet 2 was fixed without rotating, and in which the magnet 2 was not used. The film thickness after sputtering for 1 hour and the initial magnetic permeability μi of the alloy film at 100 KHz were measured. The results are summarized in Table 1.
【表】
上表に示したように本発明の方法ではスパツタ
ーレートの大幅な向上と、作製直後においても高
い透磁率が得られることがわかつた。一方、磁石
を固定した場合もスパツターレートは向上するも
のの、多少膜厚分布が悪くなるほか、得られた合
金膜面内に容易軸と困難軸方向が生じ、容易軸方
向のμiが著しく低くなるという欠点がある。
例 2
ターゲツトにFe−Ni合金(パーマロイ)を用
い、約300℃に加熱した基板上に例1と同様な方
法でパーマロイスパツター膜を形成した。結果を
第2表に示す。[Table] As shown in the above table, it was found that the method of the present invention significantly improved the sputter rate and obtained high magnetic permeability even immediately after fabrication. On the other hand, when the magnet is fixed, the sputter rate improves, but the film thickness distribution deteriorates to some extent, and the resulting alloy film has an easy axis and a hard axis, and the μi in the easy axis direction is extremely low. It has the disadvantage of becoming. Example 2 A permalloy sputter film was formed in the same manner as in Example 1 on a substrate heated to about 300°C using an Fe-Ni alloy (permalloy) as a target. The results are shown in Table 2.
【表】
又通常市販されている第1図aのようなマグネ
トロン型スパツター装置を用いて実験を行なつた
ところ、上表の磁石なしの場合とまつたく同様の
結果が得られた。
発明の効果
以上の説明から明らかなように、本発明の方法
は、従来困難であつた磁性体の高速スパツターを
可能にし、かつ優れた軟磁性を示す磁性体膜を熱
処理なしで得るのに極めて有効な方法である。[Table] When an experiment was conducted using a magnetron type sputtering device as shown in FIG. 1a, which is commonly available on the market, results were obtained that were exactly the same as those without a magnet as shown in the table above. Effects of the Invention As is clear from the above description, the method of the present invention enables high-speed sputtering of magnetic materials, which has been difficult in the past, and is extremely effective in obtaining magnetic films exhibiting excellent soft magnetism without heat treatment. This is an effective method.
第1図aは従来のマグネトロン型スパツター装
置の概念的な構成を示す側面図、同図bは要部側
面図、第2図aは本発明の方法の一実施例を実施
するための装置の要部平面図、同図bはその側面
断面図である。
11……基板、12……磁石、13……支持
台、14……ベアリング、15……支持台、16
……駆動機構、17……ターゲツト、18……タ
ーゲツト電極。
FIG. 1a is a side view showing the conceptual configuration of a conventional magnetron type sputtering device, FIG. 1b is a side view of the main part, and FIG. A plan view of the main part, and Figure b is a side sectional view thereof. 11...Substrate, 12...Magnet, 13...Support stand, 14...Bearing, 15...Support stand, 16
... Drive mechanism, 17 ... Target, 18 ... Target electrode.
Claims (1)
パツタ装置を用いて磁性合金膜を作製する際に、
前記基板ホルダーと前記ターゲツトとの間にN極
とS極が一定距離をへだてて相対向した磁石をそ
れぞれターゲツトの横にかつターゲツト面にほぼ
垂直に置き、その磁界がターゲツトの面内方向と
同時に前記基板ホルダーに取り付けられた基板の
面内方向にほぼ平行となるようにし、かつスパツ
タ中に前記磁石を回転させることを特徴とする薄
膜磁性体の作製法。1. When producing a magnetic alloy film using a sputtering device in which the substrate holder and target face each other,
Magnets with N and S poles facing each other with a certain distance between the substrate holder and the target are placed next to the target and approximately perpendicular to the target surface, and the magnetic field is directed in the in-plane direction of the target at the same time. A method for producing a thin film magnetic material, characterized in that the magnet is rotated during sputtering so that the magnet is substantially parallel to the in-plane direction of the substrate attached to the substrate holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046307A JPS59172225A (en) | 1983-03-18 | 1983-03-18 | Manufacture of thin film magnetic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046307A JPS59172225A (en) | 1983-03-18 | 1983-03-18 | Manufacture of thin film magnetic material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59172225A JPS59172225A (en) | 1984-09-28 |
| JPH035643B2 true JPH035643B2 (en) | 1991-01-28 |
Family
ID=12743530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58046307A Granted JPS59172225A (en) | 1983-03-18 | 1983-03-18 | Manufacture of thin film magnetic material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59172225A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0584768B1 (en) * | 1992-08-24 | 1999-08-11 | Matsushita Electric Industrial Co., Ltd. | Method for making soft magnetic film |
| GB9700158D0 (en) | 1997-01-07 | 1997-02-26 | Gencoa Limited | Versatile coating deposition system |
| CN104465017A (en) * | 2014-12-15 | 2015-03-25 | 南京理工大学 | Nd-doped CoZr-base high-frequency soft magnetic film and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5358489A (en) * | 1976-11-08 | 1978-05-26 | Ise Electronics Corp | Spattering system |
| JPS55107773A (en) * | 1979-02-09 | 1980-08-19 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous film |
| JPS5778123A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Manufacture of anisotropic thin magnetic film |
-
1983
- 1983-03-18 JP JP58046307A patent/JPS59172225A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59172225A (en) | 1984-09-28 |
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