JPH0359601B2 - - Google Patents
Info
- Publication number
- JPH0359601B2 JPH0359601B2 JP56207979A JP20797981A JPH0359601B2 JP H0359601 B2 JPH0359601 B2 JP H0359601B2 JP 56207979 A JP56207979 A JP 56207979A JP 20797981 A JP20797981 A JP 20797981A JP H0359601 B2 JPH0359601 B2 JP H0359601B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- resonator
- dielectric plate
- metal case
- microstrip line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Description
【発明の詳細な説明】 本発明な該誘電体共振器の改良に関する。[Detailed description of the invention] The present invention relates to improvements in the dielectric resonator.
最近、超短波帯に用いられる共振器として、誘
電率が高く且つ温度特性の優れた誘電体共振器が
用いられるようになつて来ている。ところが誘電
体共振器のみでは、もれ電磁界のためQ0があま
り高くできなくミリ波帯では誘電体の高安定共振
器が得られなかつた。このため第１図の平面図に
示す如く誘電体１を金属ケース２で覆いQ0を高
めて使用されている。ところがこの場合は金属ケ
ース２及び誘電体１とマイクロストリツプライン
３との距離ｄ、半導体デバイス４までの距離ｌを
合わせることが極めて困難である。即ち誘電体１
と金属ケース２とを別々に動かさねばならずｄと
ｌを同時に満足することは容易ではない。本発明
はこの欠点を改良するために案出されたものであ
る。 Recently, dielectric resonators having a high dielectric constant and excellent temperature characteristics have come to be used as resonators for use in the ultrahigh frequency band. However, with only a dielectric resonator, Q 0 cannot be made very high due to leakage electromagnetic fields, and a highly stable dielectric resonator cannot be obtained in the millimeter wave band. For this reason, as shown in the plan view of FIG. 1, the dielectric 1 is covered with a metal case 2 to increase Q0 . However, in this case, it is extremely difficult to match the distance d between the metal case 2 and the dielectric 1 and the microstrip line 3, and the distance l to the semiconductor device 4. That is, dielectric 1
and the metal case 2 must be moved separately, and it is not easy to satisfy d and l at the same time. The present invention has been devised to improve this drawback.
このため本発明の共振器においては、誘電体共
振器を低誘電率の誘電体板上に接着固定し、該誘
電体板との接着面を除き金属ケースで覆い、かつ
誘電体板の金属ケースと接触する面をメタライズ
して金属ケースを接着封止し、更に該誘電体板の
下面にマイクロストリツプラインとの位置合わせ
用の段差を設け、該誘電体板を、マイクロストリ
ツプラインが設けられた別の基板に載置し、該誘
電体板の段差をマイクロストリツプラインに係合
させたことを特徴とするものである。 Therefore, in the resonator of the present invention, the dielectric resonator is adhesively fixed on a dielectric plate with a low dielectric constant, and is covered with a metal case except for the adhesive surface with the dielectric plate, and the metal case of the dielectric plate is The surface in contact with the dielectric plate is metalized and the metal case is sealed with adhesive, and a step is provided on the lower surface of the dielectric plate for alignment with the microstrip line. The device is characterized in that the dielectric plate is mounted on another substrate, and the steps of the dielectric plate are engaged with the microstrip lines.
以下、添付図面に基づいて本発明の実施例につ
き詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail based on the accompanying drawings.
第２図に実施例の分解斜視図を示す。図につい
て説明すると、符号５は高誘電率の誘電体よりな
る該誘電体共振器、６は石英等の低誘電率の誘電
体板、７は下方が開放した金属ケース、８は金属
ケースに設けられ共振周波数調整用のねじであ
る。そして誘電体板６には誘電体共振器５が接着
固定され、また金属ケースとの接触面にはメタラ
イズ９が施されている。本実施例はこのメタライ
ズ９部分に金属ケース７を接着封止したものであ
る。 FIG. 2 shows an exploded perspective view of the embodiment. To explain the diagram, reference numeral 5 denotes the dielectric resonator made of a dielectric material with a high dielectric constant, 6 a dielectric plate with a low dielectric constant such as quartz, 7 a metal case with an open bottom, and 8 installed in the metal case. This is a screw for adjusting the resonant frequency. A dielectric resonator 5 is adhesively fixed to the dielectric plate 6, and a metallization 9 is applied to the contact surface with the metal case. In this embodiment, a metal case 7 is adhesively sealed to the metallized portion 9.
このように構成された本実施例は第３図の平面
図及び第４図の断面図に示す如くマイクロストリ
ツプライン１１、共振器１０、半導体デバイス１
２等の回路を筺体１６に収容した発振器に用いら
れる場合、本実施例の共振器１０は誘電体共振器
５と金属ケース７とを一体となつて動かせるた
め、マイクロストリツプライン１１との距離ｄ及
び半導体デバイス１２までの距離ｌを調節するこ
とが極めて容易となる。 As shown in the plan view of FIG. 3 and the cross-sectional view of FIG.
When the resonator 10 of this embodiment is used in an oscillator in which a second circuit is housed in the casing 16, the distance from the microstrip line 11 can be reduced because the dielectric resonator 5 and the metal case 7 can be moved together. It becomes extremely easy to adjust d and the distance l to the semiconductor device 12.
またこの場合発振特性を決めるパラメータは半
導体デバイスが一定とすればｌとｄとｘ（ｘは誘
電体共振器５と周波数調整用ねじ８との距離）と
なる。そこで調整の際はパラメータが少ないほど
容易になるので、あらかじめ結合係数を決めてお
けばｌとｘのみ調整すればよいことになる。ｘは
共振器単体で調整できるので主にｌの調整ですむ
ことになる。このためｄを一定に保つ方法として
第５図の如く誘電体板６にマイクロストリツプラ
イン１１に係合する段差１３を設けておき、誘電
体板６をマイクロストリツプライン１１に沿つて
動かすことにより誘電体共振器５の位置決めが極
めて容易となる。なお段差１３はマイクロストリ
ツプライン１３と嵌合する溝としておいても良
い。第６図は他の方法としてMIC基板１４の端
縁に係合する段差１５を誘電体板６に設けたもの
であり、その作用効果は第５図の場合と同様であ
る。 Further, in this case, if the semiconductor device is constant, the parameters determining the oscillation characteristics are l, d, and x (x is the distance between the dielectric resonator 5 and the frequency adjustment screw 8). Therefore, the fewer parameters the easier the adjustment, so if the coupling coefficient is determined in advance, only l and x need be adjusted. Since x can be adjusted by the resonator alone, adjustment of 1 is mainly required. Therefore, as a way to keep d constant, as shown in FIG. 5, a step 13 is provided on the dielectric plate 6 to engage with the microstrip line 11, and the dielectric plate 6 is moved along the microstrip line 11. This makes positioning of the dielectric resonator 5 extremely easy. Note that the step 13 may be a groove that fits into the microstrip line 13. FIG. 6 shows another method in which the dielectric plate 6 is provided with a step 15 that engages with the edge of the MIC board 14, and the effect is the same as that shown in FIG.
以上説明した如く本発明の共振器は誘電体共振
器を金属ケースで封止して湿度により共振周波数
の変化を抑止するとともに発振器に応用した場合
の微妙な調整を極めて容易に行なうことを可能と
したものである。 As explained above, the resonator of the present invention is a dielectric resonator sealed with a metal case to suppress changes in the resonant frequency due to humidity, and allows for extremely easy delicate adjustments when applied to an oscillator. This is what I did.
第１図は従来の共振器を発振器に用いた場合を
説明する説明図、第２図は本発明にかかる実施例
の共振器の分解斜視図、第３図は本発明にかかる
共振器を発振器に応用した状態を示した上面図、
第４図は第３図の−線における断面図、第５
図及び第６図は誘電体板に段差を設けた本発明の
共振器の断面図である。
５……誘電体共振器、６……誘電体板、７……
金属ケース、８……周波数調整用ねじ、９……メ
タライズ、１０……共振器、１１……マイクロス
トリツプライン、１２……半導体デバイス、１
３，１５……段差、１６……筐体。
Fig. 1 is an explanatory diagram illustrating a case where a conventional resonator is used as an oscillator, Fig. 2 is an exploded perspective view of a resonator according to an embodiment of the present invention, and Fig. 3 is an explanatory diagram illustrating a case where a conventional resonator is used as an oscillator. A top view showing the state in which it is applied to
Figure 4 is a sectional view taken along the - line in Figure 3;
6 and 6 are cross-sectional views of a resonator of the present invention in which a dielectric plate is provided with a step. 5...Dielectric resonator, 6...Dielectric plate, 7...
Metal case, 8... Frequency adjustment screw, 9... Metallization, 10... Resonator, 11... Microstrip line, 12... Semiconductor device, 1
3, 15...step, 16...casing.
Claims (1)
固定し、該誘電体板との接着面を除き金属ケース
で覆い、かつ誘電体板の金属ケースと接触する面
をメタライズして金属ケースを接着封止し、更に
該誘電体板の下面にマイクロストリツプラインと
の位置合わせ用の段差を設け、該誘電体板を、マ
イクロストリツプラインが設けられた別の基板に
載置し、該誘電体板の段差をマイクロストリツプ
ラインに係合させたことを特徴とする共振器。1. A dielectric resonator is adhesively fixed on a dielectric plate with a low dielectric constant, covered with a metal case except for the adhesive surface with the dielectric plate, and the surface of the dielectric plate that comes into contact with the metal case is metallized. The case is sealed with adhesive, and a step is provided on the lower surface of the dielectric plate for alignment with the microstrip line, and the dielectric plate is placed on another substrate provided with the microstrip line. , A resonator characterized in that a step of the dielectric plate is engaged with a microstrip line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20797981A JPS58111409A (en) | 1981-12-24 | 1981-12-24 | Resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20797981A JPS58111409A (en) | 1981-12-24 | 1981-12-24 | Resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58111409A JPS58111409A (en) | 1983-07-02 |
| JPH0359601B2 true JPH0359601B2 (en) | 1991-09-11 |
Family
ID=16548665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20797981A Granted JPS58111409A (en) | 1981-12-24 | 1981-12-24 | Resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58111409A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6298307U (en) * | 1985-12-10 | 1987-06-23 | ||
| IT1264648B1 (en) * | 1993-07-02 | 1996-10-04 | Sits Soc It Telecom Siemens | TUNABLE RESONATOR FOR OSCILLATORS AND MICROWAVE FILTERS |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5362241U (en) * | 1976-10-28 | 1978-05-26 | ||
| JPS5675705A (en) * | 1979-11-26 | 1981-06-23 | Fujitsu Ltd | Dielectric resonator |
-
1981
- 1981-12-24 JP JP20797981A patent/JPS58111409A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58111409A (en) | 1983-07-02 |
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