JPH0359657U - - Google Patents

Info

Publication number
JPH0359657U
JPH0359657U JP11987689U JP11987689U JPH0359657U JP H0359657 U JPH0359657 U JP H0359657U JP 11987689 U JP11987689 U JP 11987689U JP 11987689 U JP11987689 U JP 11987689U JP H0359657 U JPH0359657 U JP H0359657U
Authority
JP
Japan
Prior art keywords
laser diode
diode
voltage
threshold voltage
zener diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11987689U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11987689U priority Critical patent/JPH0359657U/ja
Publication of JPH0359657U publication Critical patent/JPH0359657U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの考案の一実施例によるレーザダイ
オード回路図、第2図は従来のレーザダイオード
回路図である。 1……レーザダイオード、2……抵抗、3……
ツエナーダイオード。なお、図中、同一符号は同
一、又は相当部分を示す。
FIG. 1 is a circuit diagram of a laser diode according to an embodiment of this invention, and FIG. 2 is a circuit diagram of a conventional laser diode. 1... Laser diode, 2... Resistor, 3...
Zener diode. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] レーザダイオードと、ツエナーダイオードとが
逆並列接続されたレーザダイオード回路において
、前記ツエナーダイオードの降伏電圧が前記レー
ザダイオードのしきい値電圧より低く設定し、か
つ、前記ツエナーダイオードの降伏電圧と前記レ
ーザダイオードのしきい値電圧との差が高温で小
さくなる温度特性を有するように設定し、かつ、
前記レーザダイオードの動作電圧における微分抵
抗と前記ツエナーダイオードの上記動作電圧にお
ける微分抵抗とが1/10〜10倍以内の値であるこ
とを特徴とするレーザダイオード回路。
In a laser diode circuit in which a laser diode and a Zener diode are connected in antiparallel, the breakdown voltage of the Zener diode is set lower than the threshold voltage of the laser diode, and the breakdown voltage of the Zener diode and the laser diode are set to be lower than the threshold voltage of the laser diode. is set to have temperature characteristics such that the difference from the threshold voltage becomes smaller at high temperatures, and
A laser diode circuit characterized in that the differential resistance of the laser diode at the operating voltage and the differential resistance of the Zener diode at the operating voltage are within 1/10 to 10 times the value.
JP11987689U 1989-10-14 1989-10-14 Pending JPH0359657U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11987689U JPH0359657U (en) 1989-10-14 1989-10-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11987689U JPH0359657U (en) 1989-10-14 1989-10-14

Publications (1)

Publication Number Publication Date
JPH0359657U true JPH0359657U (en) 1991-06-12

Family

ID=31667972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11987689U Pending JPH0359657U (en) 1989-10-14 1989-10-14

Country Status (1)

Country Link
JP (1) JPH0359657U (en)

Similar Documents

Publication Publication Date Title
JPH0359657U (en)
JPH01140140U (en)
JPS62166515U (en)
JPS62103315U (en)
JPS63182420U (en)
JPS6314337U (en)
JPH0310631U (en)
JPS62112109U (en)
JPH01117572U (en)
JPS6218629U (en)
JPS60136038U (en) current limiting device
JPH0226343U (en)
JPH0386420U (en)
JPS5885220U (en) data reading circuit
JPH0328634U (en)
JPH02114343U (en)
JPS59111003U (en) Lightning arrester
JPS6188433U (en)
JPS6361012U (en)
JPH029451U (en)
JPH0252131U (en)
JPH02133012U (en)
JPS5828535U (en) safety retainer
JPH0314826U (en)
JPS5834442U (en) DC two-wire non-contact switch