JPH0360631B2 - - Google Patents

Info

Publication number
JPH0360631B2
JPH0360631B2 JP57229230A JP22923082A JPH0360631B2 JP H0360631 B2 JPH0360631 B2 JP H0360631B2 JP 57229230 A JP57229230 A JP 57229230A JP 22923082 A JP22923082 A JP 22923082A JP H0360631 B2 JPH0360631 B2 JP H0360631B2
Authority
JP
Japan
Prior art keywords
abrasive material
resin
abrasive
synthetic resin
edges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57229230A
Other languages
Japanese (ja)
Other versions
JPS59124572A (en
Inventor
Takashi Myatani
Junji Nakada
Yoshisuke Seki
Satohisa Kageyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Mitsui Toatsu Chemicals Inc
Original Assignee
Toshiba Corp
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Mitsui Toatsu Chemicals Inc filed Critical Toshiba Corp
Priority to JP22923082A priority Critical patent/JPS59124572A/en
Priority to US06/522,736 priority patent/US4548617A/en
Publication of JPS59124572A publication Critical patent/JPS59124572A/en
Publication of JPH0360631B2 publication Critical patent/JPH0360631B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24CABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/08Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for polishing surfaces, e.g. smoothing a surface by making use of liquid-borne abrasives
    • B24C1/083Deburring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24CABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C11/00Selection of abrasive materials or additives for abrasive blasts
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は合成樹脂製の研磨材に関し、特に噴射
加工中において鋭いエツジの新生作用(以下、自
主発刃作用)を有する研磨材に係る。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an abrasive material made of synthetic resin, and particularly to an abrasive material that has the ability to generate sharp edges (hereinafter referred to as self-sharpening ability) during blast processing.

〔発明の技術的背景〕[Technical background of the invention]

軟質金属の表面処理や電子機器部品のバリ除去
を行なうには、研磨材を圧縮空気で加速し、被加
工物である軟質金属や電子機器部品に衝突させて
噴射加工する方法が採用されている。かかる研磨
材としては、従来、くるみ殻粉、あんず殻粉が用
いられている。
In order to perform surface treatment on soft metals and remove burrs from electronic device parts, a method is used in which the abrasive material is accelerated with compressed air and is jetted by colliding with the soft metal or electronic device parts being processed. . Conventionally, walnut shell powder and apricot shell powder have been used as such abrasives.

〔背景技術の問題点〕[Problems with background technology]

しかしながら、植物性であるくるみ殻粉、あん
ず殻粉は乾燥状態での弾性力が大きく、粘り気が
あるため、これらを研磨材として用いて被加工物
の噴射加工を行なうと、該研磨材のエツジだけが
丸くなつて短時間で研磨力が低下するという欠点
があつた。したがつて、かかる研磨材をたとえば
半導体モールド成形品の樹脂バリの除去に適用す
ると、該成形品のリードフレーム上および間隔の
せまいリード間に存在する樹脂バリを十分除去で
きない。
However, vegetable-based walnut shell powder and apricot shell powder have high elasticity and stickiness when dry, so when these are used as abrasives to blast the workpiece, the edges of the abrasives The drawback was that the polishing force was reduced in a short period of time due to rounded edges. Therefore, when such an abrasive is applied to, for example, removing resin burrs from a semiconductor molded product, the resin burrs present on the lead frame of the molded product and between narrowly spaced leads cannot be sufficiently removed.

〔発明の目的〕[Purpose of the invention]

本発明は被加工物への噴射加工に際して良好な
研磨力を長期間に亘つて発揮し得かつ微細部分の
加工に適する研磨材を提供しようとするものであ
る。
The present invention aims to provide an abrasive material that can exhibit good abrasive power over a long period of time when blasting a workpiece and is suitable for machining fine parts.

〔発明の概要〕[Summary of the invention]

本発明に係わる研磨材は、それぞれ多数のエツ
ジを有する偏平状合成樹脂粒体、針状合成樹脂粒
体および粒状合成樹脂粒体の混合物からなること
を特徴とするものである。
The abrasive material according to the present invention is characterized in that it is composed of a mixture of flat synthetic resin granules, acicular synthetic resin granules, and granular synthetic resin granules each having a large number of edges.

前記各粒体は、多数のエツジを有すると共に、
圧縮空気による噴射加工工程時の被加工物への衝
突により割れて新しいエツジが形成されるように
することから、前記各粒体は硬度および延性が適
度に制限された合成樹脂から形成することが望ま
しい。かかる合成樹脂としては、例えばエポキシ
樹脂、尿素樹脂、ポリエステル樹脂等の熱硬化性
樹脂のほかにアクリル樹脂等の比較的硬質の熱可
塑性樹脂を挙げることができる。
Each of the particles has a large number of edges, and
Since the granules are to be cracked and new edges are formed due to collision with the workpiece during the jetting process using compressed air, each of the granules may be formed from a synthetic resin with moderately limited hardness and ductility. desirable. Examples of such synthetic resins include thermosetting resins such as epoxy resins, urea resins, and polyester resins, as well as relatively hard thermoplastic resins such as acrylic resins.

前記混合物は、前記各合成樹脂粒体をそれぞれ
適量混合することにより構成される。
The mixture is formed by mixing appropriate amounts of each of the synthetic resin particles.

上記合成樹脂粒体の大きさは研磨材の用途によ
り自由に選定し得るが、例えばモールド成形品の
樹脂バリ除去に用いる場合には平均径(1つの粒
体の最大径と最小径の和の1/2)で0.05〜2.0mmの
範囲内においてピークを持つ分布のものが望まし
い。
The size of the synthetic resin granules can be freely selected depending on the use of the abrasive, but for example, when used for removing resin burrs from molded products, the average diameter (the sum of the maximum diameter and minimum diameter of one granule) 1/2) with a peak within the range of 0.05 to 2.0 mm.

上述した本発明の研磨材を製造するには、例え
ば塊状の合成樹脂素材を各種の粉砕機、例えば咀
砕機、旋動破砕機、ロール粉砕機、円盤粉砕機、
コーン粉砕機、ハンマーミル、エツジランナー、
遠心ミル、ボールミル又はチユーブミル等で粉砕
する方法が採用し得る。
In order to produce the abrasive material of the present invention described above, for example, a lump of synthetic resin material is processed in various types of crushers, such as a masticator, a rotary crusher, a roll crusher, a disk crusher,
Corn crusher, hammer mill, edge runner,
A method of pulverizing with a centrifugal mill, ball mill, tube mill, etc. can be adopted.

しかして、本発明の研磨材はそれぞれ多数のエ
ツジを有する偏平状合成樹脂粒体、針状合成樹脂
粒体および粒状合成樹脂粒体の混合物からなるた
め、これを圧縮空気で加速し、被加工物に衝突さ
せて噴射加工を行なうと、前記混合物を構成する
各合成樹脂粒体の多数のエツジによる局所的な衝
突により被加工物の研削或いはバリ取り除去を効
果的に行なうことができる。しかも、前記混合物
を構成する偏平状合成樹脂粒体、針状合成樹脂粒
体は前記衝突時に割れて新しいエツジを形成す
る、いわゆる自生発刃作用が高いため、長期間の
使用においても優れた被加工物の研削或いはバリ
取り除去性能を維持できる。
Since the abrasive material of the present invention is composed of a mixture of flat synthetic resin granules, acicular synthetic resin granules, and granular synthetic resin granules each having a large number of edges, the abrasive material is accelerated with compressed air and When spray processing is performed by colliding with an object, the workpiece can be effectively ground or deburred by local collisions caused by the many edges of each synthetic resin granule constituting the mixture. Furthermore, the flat synthetic resin granules and acicular synthetic resin granules that make up the mixture have a high so-called self-sharpening effect that breaks during the collision and forms new edges, so they provide excellent protection even during long-term use. Grinding or deburring performance of the workpiece can be maintained.

なお、上記合成樹脂粒体に界面活性剤を保持せ
しめて研磨材を構成すれば、この研磨材を用いて
被加工物を特に乾式プラスト処理した場合、被加
工物への帯電発生を阻止でき、プラスト処理後の
被加工物の洗浄処理を簡便にできる。
Furthermore, if an abrasive material is formed by retaining a surfactant in the synthetic resin granules, it is possible to prevent the generation of electrical charge on the workpiece, especially when the workpiece is subjected to dry blasting using this abrasive material. It is possible to easily clean the workpiece after the blast treatment.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例を図面を参照して詳細に
説明する。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

本実施例の研磨材は、第1図aに示すような多
数のエツジ1…を有する扁平状の例えば不飽和ポ
リエステル樹脂、エポキシ樹脂、尿素樹脂、アク
リル樹脂等の合成樹脂粒体からなる研磨材2及び
第2図に示すような多数のエツジ1…を有する研
磨材2と同質の合成樹脂からなる粒状の研磨材
2′及び研磨材2,2′と同質の合成樹脂からなる
第3図図示の針状の研磨材2″の混合物である。
上記各研磨材2,2′,2″の平均径は、0.3mm前
後のピークを有する0.05〜0.2mmの範囲内のもの
である。そして、これら各研磨材2,2′,2″の
混合割合は、それぞれ0.1%から100%未満であ
る。
The abrasive material of this embodiment is an abrasive material made of flat synthetic resin particles such as unsaturated polyester resin, epoxy resin, urea resin, acrylic resin, etc., having a large number of edges 1 as shown in FIG. 2 and a granular abrasive material 2' made of a synthetic resin of the same quality as the abrasive material 2 having a large number of edges 1 as shown in FIG. It is a mixture of acicular abrasive material 2''.
The average diameter of each of the abrasive materials 2, 2', 2'' is within the range of 0.05 to 0.2 mm with a peak of around 0.3 mm. The percentages range from 0.1% to less than 100%, respectively.

上記研磨材2,2′,2″を得るには、塊状の合
成樹脂素材をクラツシヤ、ハンマー等により粗粉
砕した後、各種の粉砕機たとえば咀砕機、旋動破
砕機、円盤粉砕機、コーン粉砕機、ハンマーミ
ル、エツジランナー遠心ミル、チユーブミル、ボ
ールミル、ロールミル又は衝撃粉砕機等を用いて
微粉砕することにより得られる。このようにして
得られたものは、上記研磨材2,2′,2″が混在
した状態であるが、その混合割合が所望値と異な
る場合は、あらかじめそれぞれの研磨材2,2′,
2″を単独で作つて、これらを所望値になるよう
に混合する。すなわち、扁平状の研磨材2は、例
えば厚さ1.0mm以下の板状の合成樹脂素材を破砕
処理することに得られる。また、粒状の研磨材
2′は、例えば厚さ数10mm以下の厚板状又は棒状
の合成樹脂素材を破砕処理したのち風篩にかける
ことにより得られる。さらに、針状の研磨材2″
は、直径が0.1mm前後の糸状の合成樹脂素材を一
対のローラにより挾圧したのち風篩にかけること
により得られる。
In order to obtain the abrasive materials 2, 2', 2'', the synthetic resin material in the form of a block is coarsely pulverized using a crusher, hammer, etc., and then a variety of pulverizers such as a masticator, a rotary pulverizer, a disc pulverizer, a cone pulverizer are used. The abrasives 2, 2', 2 obtained in this manner are obtained by pulverizing them using a machine, hammer mill, Edge Runner centrifugal mill, tube mill, ball mill, roll mill, impact pulverizer, etc. '', but if the mixing ratio is different from the desired value, add the respective abrasives 2, 2',
2'' is made individually and mixed to a desired value. That is, the flat abrasive material 2 can be obtained by crushing a plate-shaped synthetic resin material with a thickness of 1.0 mm or less, for example. Further, the granular abrasive material 2' can be obtained, for example, by crushing a plate-like or rod-like synthetic resin material with a thickness of several tens of millimeters or less, and then passing it through an air sieve.Furthermore, the acicular abrasive material 2''
is obtained by pinching and pressing a thread-like synthetic resin material with a diameter of around 0.1 mm between a pair of rollers and then passing it through a wind sieve.

次に、前記研磨材による第4図図示の半導体モ
ールド成形品の樹脂バリ除去を第5図図示の湿式
プラスト装置を用いて説明する。
Next, the removal of resin burrs from the semiconductor molded product shown in FIG. 4 using the abrasive material will be explained using the wet-type plast apparatus shown in FIG. 5.

予め、半導体素子がマウントされたリードフレ
ールを成形金型内に収納した後、該金型内にエポ
キシ樹脂を注入して第4図に示す如くリードフレ
ーム3上の半導体素子(図示せず)が樹脂層4で
封止された半導体モールド成形品を成形した。
この成形品5にはモールド成形時において樹脂層
4付近のリードフレーム3上及びリードフレーム
3のリード間に樹脂バリ6…が発生した。
After the lead flail on which the semiconductor element is mounted is housed in a molding mold in advance, epoxy resin is injected into the mold to form a semiconductor element (not shown) on the lead frame 3 as shown in FIG. A semiconductor molded product 5 sealed with a resin layer 4 was molded.
In this molded product 5, resin burrs 6 were generated on the lead frame 3 near the resin layer 4 and between the leads of the lead frame 3 during molding.

次いで、第5図に示す加圧室7内に設置したホ
ツパ8内に前記研磨材2…,2′…,2″…と水9
とを1:3の比率で収容した。つづいて、第1の
ポンプ10を作動して研磨材2…を水9と共に吸
い込み、これをホツパ8底部へ強制的に送給する
ことにより撹拌し、研磨材2…,2′…,2″…を
均一に分散させてスラリーを調製した。
Next, the abrasive materials 2..., 2'..., 2''... and water 9 are placed in a hopper 8 installed in the pressurizing chamber 7 shown in FIG.
were housed in a ratio of 1:3. Next, the first pump 10 is operated to suck in the abrasive materials 2... together with the water 9, and the abrasive materials 2..., 2'..., 2'' are forcibly fed to the bottom of the hopper 8 and stirred. A slurry was prepared by uniformly dispersing...

次いで、第2のポンプ11を作動させて、スラ
リーを吸上げてガン12に導入し、これを空気導
入管13からの圧縮空気により分散加速して水、
研磨材及び空気の三相高速噴射流14として加工
室7内に搬送された前述の半導体モールド成形品
(図示せず)に向つて噴射させた。このように噴
射流がモールド成形品に噴射されると、第6図に
示す如く多数のエツジ1…を有する研磨材2がモ
ールド成形品のリードフレーム3上及びリード
フレーム3のリード間に付着した樹脂バリ6に衝
突する。樹脂バリ6は熱硬化性のエポキシ樹脂か
らなり、脆く破壊され易いため、研磨材2,2′,
2″のエツジ1による集中的(局所的)な衝撃力
及び該衝撃力に伴なう振動により樹脂バリ6にク
ラツク15が発生する。しかも、樹脂バリ6に発
生したクラツク15に水が浸入してリードフレー
ム3と樹脂バリ6の界面に入り、樹脂バリ6をリ
ードフレーム3に対して浮かすように作用する。
更に、多数のエツジ1…を有する研磨材2,2′,
2″が樹脂バリ6のクラツク15に何度も衝突す
るため、前記浸入した水による樹脂バリ6の浮上
げ作用と相俟つて樹脂バリ6が完全に除去され
る。
Next, the second pump 11 is operated to suck up the slurry and introduce it into the gun 12, and the slurry is dispersed and accelerated by compressed air from the air introduction pipe 13 to become water,
A three-phase high-speed jet stream 14 of abrasive material and air was injected toward the aforementioned semiconductor molded product (not shown) transported into the processing chamber 7. When the jet stream is injected onto the molded product in this way, as shown in FIG. collides with the resin burr 6. The resin burr 6 is made of thermosetting epoxy resin and is brittle and easily broken.
A crack 15 is generated in the resin burr 6 due to the concentrated (local) impact force by the edge 1 of 2'' and the vibration accompanying the impact force.Moreover, water penetrates into the crack 15 generated in the resin burr 6. The resin burr 6 enters the interface between the lead frame 3 and the resin burr 6 and acts to lift the resin burr 6 relative to the lead frame 3.
Further, abrasive materials 2, 2', having a large number of edges 1...
2'' collides with the crack 15 of the resin burr 6 many times, and together with the floating action of the resin burr 6 by the infiltrated water, the resin burr 6 is completely removed.

また、研磨材2,2′,2″は多数のエツジ1…
を有するため、前記半導体モールド成形品への
衝突により、研磨材2,2′,2″自体の丸くなつ
たエツジが例えば第1図aの一点鎖線に沿つて割
れて脱落し、第1図bに示す如く新しいエツジ
1′…が生じる。その結果、長期間の使用におい
ても半導体モールド成形品の樹脂バリ6の除去
性能を維持できる。また、本発明の研磨材2,
2′,2″を用いると、例えば半導体モールド成形
を噴射加工した場合、扁平状の研磨材2及び
針状の研磨材2″は、半導体モールド成形品
リードフレーム3のリード間隙及び樹脂層4とリ
ードフレーム3との境界近傍の狭隘な微小部分に
発生している樹脂バリ6…に衝突する確率が粒状
の研磨材2′より高く、その結果、これらの部分
に生じている樹脂バリ6…は、主として研磨材
2,2″によりバリ取りされる。また、粒状の研
磨材2′は、主としてリードフレーム3上に発生
した樹脂バリの除去に寄与する。したがつて、該
成形品の樹脂バリ6をむらなく、効果的に除去
できると共に、該研磨材2のエツジ1…により成
形品の微細箇所(例えばリードフレーム3のリ
ード間等)に付着した樹脂バリ6をも除去残りを
生じることなく完全に除去できる。
Further, the abrasive materials 2, 2', 2'' have a large number of edges 1...
Due to the collision with the semiconductor molded product 5 , the rounded edges of the abrasives 2, 2', 2'' themselves break and fall off, for example, along the dashed line in FIG. New edges 1' are formed as shown in b.As a result, the ability to remove resin burrs 6 from the semiconductor molded product 5 can be maintained even during long-term use.Furthermore, the polishing material 2 of the present invention,
2' and 2'', for example, when a semiconductor molded product 5 is jet-processed, the flat abrasive material 2 and the needle-like abrasive material 2" are used to fill the gap between the leads of the lead frame 3 of the semiconductor molded product 5 and The probability of colliding with the resin burrs 6 that are generated in narrow, minute areas near the boundary between the resin layer 4 and the lead frame 3 is higher than that of the granular abrasive 2', and as a result, the resin that is generated in these areas The burrs 6 are mainly removed by the abrasives 2 and 2''. Furthermore, the granular abrasives 2' mainly contribute to the removal of resin burrs generated on the lead frame 3. Therefore, the molding The resin burrs 6 on the molded product 5 can be evenly and effectively removed, and the resin burrs 6 attached to minute parts of the molded product 5 (for example, between the leads of the lead frame 3) can also be removed by the edges 1 of the abrasive 2. Can be completely removed without leaving any residue.

ちなみに、扁平状の研磨材2の割合が30〜10
%、粒状の研磨材2′の割合が50〜80%、針状の
研磨材2″の割合が10〜20%で、それぞれの最大
径と最小径とを算術平均した平均粒径が、0.2〜
1.6mm(ただし、この平均粒径は、バリ取り対象
が半導体装置であれば、リード間の間隙以下にな
るように決定する。)エツジ部分の先端角度が180
度以下かつエツジ先端の丸みが半径0.2mm以下の
研磨材を用いて、半導体装置の樹脂部分のバリ取
りを行つた場合のバリ取り性を第7図に示した。
このときの試験条件は、連続24時間湿式プラスト
装置により半導体装置をバリ取り加工した後、さ
らに、10000個バリ取りしたものであつて、これ
ら10000個の被加工物のうちから任意に1000個サ
ンプリングした被加工物のうち、完全にバリ取り
された被加工物の割合をバリ取り性として100分
率表示したものである。この図からわかるよう
に、本実施例の研磨材は、バリ取り性は、ほぼ
100%であるのに対して、比較例として示した通
常の研磨材である球状又は円柱状の平均粒径が
0.2〜1.6mmの範囲内にある研磨材を用いた場合
は、バリ取り性は、ほぼ80%である。したがつ
て、本実施例の研磨材は、バリ取り性が極めてす
ぐれていることが明らかである。
By the way, the ratio of flat abrasive material 2 is 30 to 10
%, the proportion of granular abrasive material 2' is 50 to 80%, the proportion of acicular abrasive material 2'' is 10 to 20%, and the average particle diameter which is the arithmetic average of the maximum diameter and minimum diameter of each is 0.2 ~
1.6mm (However, if the object to be deburred is a semiconductor device, determine the average particle size so that it is less than the gap between the leads.) The tip angle of the edge part is 180mm.
FIG. 7 shows the deburring properties of the resin portion of a semiconductor device using an abrasive with a radius of 0.2 mm or less and an edge tip radius of 0.2 mm or less.
The test conditions at this time were to deburr a semiconductor device using a wet blasting machine for 24 hours continuously, then deburr 10,000 devices, and arbitrarily sample 1,000 of these 10,000 workpieces. The percentage of completely deburred workpieces among the processed workpieces is expressed as 100% deburring property. As can be seen from this figure, the abrasive material of this example has almost no deburring properties.
100%, whereas the average particle size of the spherical or cylindrical abrasives shown as a comparative example is
When using an abrasive in the range of 0.2 to 1.6 mm, the deburrability is approximately 80%. Therefore, it is clear that the abrasive material of this example has extremely excellent deburring properties.

なお、実施例では、研磨材2,2′,2″の混合
物を用いてバリ取り加工を行つているが、これら
を単独で用いてもよいし、扁平状の研磨材2と粒
状の研磨材2′との組合せ、扁平状の研磨材2と
針状の研磨材2″との組合せ、粒状の研磨材2′と
針状の研磨材2″との組合せによつても、上記実
施例と同様にバリ取りを行うことができる。な
お、上記研磨材2,2′,2″の硬度調整のため硬
度を下げる成分を含有させることは任意である。
In the example, deburring is performed using a mixture of abrasives 2, 2', and 2'', but these may be used alone, or a mixture of flat abrasive 2 and granular abrasives may be used. 2', a combination of a flat abrasive material 2 and a needle-like abrasive material 2'', and a combination of a granular abrasive material 2' and a needle-like abrasive material 2''. Deburring can be carried out in the same manner.In order to adjust the hardness of the abrasives 2, 2', 2'', it is optional to include a component that lowers the hardness.

更に、本発明の研磨材による噴射加工は上記実
施例の如く半導体モールド成形品の樹脂バリ除去
を目的とする場合に限らず、一般のモールド成形
品の樹脂バリ除去や軟質金属の表面処理等にも同
様に適用できる。ただし、半導体モールド成形品
のプラスト加工に研磨材2,2′,2″の混合物を
用いる場合は、粒状の研磨材2′の割合が他の研
磨材2,2″より多いものを用いるのが好ましい。
また、ダイオードの樹脂バリの除去には、針状の
研磨材2″及び扁平状の研磨材2の割合が粒状の
研磨材2′より多いものを用いるのが好ましい。
Furthermore, the injection processing using the abrasive of the present invention is not limited to the purpose of removing resin burrs from semiconductor molded products as in the above embodiments, but can also be used for removing resin burrs from general molded products, surface treatment of soft metals, etc. can be similarly applied. However, when using a mixture of abrasives 2, 2', and 2'' for plastic processing of semiconductor molded products, it is recommended to use one in which the proportion of granular abrasives 2' is greater than that of other abrasives 2, 2''. preferable.
Further, in order to remove resin burrs from the diode, it is preferable to use an abrasive material in which the proportion of the needle-like abrasive material 2'' and the flat abrasive material 2 is greater than that of the granular abrasive material 2'.

〔発明の効果〕〔Effect of the invention〕

以上詳述した如く、本発明によれば成形時に樹
脂バリが発生した半導体モールド成形品或いはそ
の他の成形品や軟質金属等の被加工物への噴射加
工に際して、長期間の使用においても被加工物の
樹脂バリ除去又は研削性を維持できる良好な研磨
力を有する研磨材を提供できるものである。
As described in detail above, according to the present invention, when injection processing is performed on workpieces such as semiconductor molded products or other molded products or soft metals in which resin burrs are generated during molding, the workpieces can be sprayed even after long-term use. It is possible to provide an abrasive material having good abrasive power that can remove resin burrs or maintain grindability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図aは本発明の一実施例である研磨材の斜
視図、第1図bは自生発刃作用により新しいエツ
ジが形成された研磨材の斜視図、第2図及び第3
図は第1図の研磨材とともに用いられる研磨材の
斜視図、第4図は半導体モールド成形品の平面
図、第5図は研磨材による半導体モールド成形品
の樹脂バリ除去に用いる湿式ブラスト装置の一形
態を示す説明図、第6図は研磨材による樹脂バリ
除去を説明するための断面図、第7図は本発明の
一実施例と比較例とのバリ取り性を示すグラフで
ある。 1,1′……エツジ、2,2′,2″……研磨材、
3……リードフレーム、……半導体モールド成
形品、6……樹脂バリ、7……加工室、8……ホ
ツパ、9……水、10,11……ポンプ、12…
…ガン、15……クラツク。
FIG. 1a is a perspective view of an abrasive material according to an embodiment of the present invention, FIG. 1b is a perspective view of an abrasive material in which new edges have been formed by the self-sharpening action, and FIGS.
The figure is a perspective view of an abrasive used together with the abrasive in Fig. 1, Fig. 4 is a plan view of a semiconductor molded product, and Fig. 5 is a wet blasting device used to remove resin burrs from a semiconductor molded product using an abrasive. FIG. 6 is a cross-sectional view for explaining resin burr removal using an abrasive material, and FIG. 7 is a graph showing burr removal properties of an example of the present invention and a comparative example. 1, 1'...Edge, 2, 2', 2''...Abrasive material,
3...Lead frame, 5 ...Semiconductor molded product, 6...Resin burr, 7...Processing chamber, 8...Hopper, 9...Water, 10, 11...Pump, 12...
...Gun, 15...Crack.

Claims (1)

【特許請求の範囲】[Claims] 1 それぞれ多数のエツジを有する偏平状合成樹
脂粒体、針状合成樹脂粒体および粒状合成樹脂粒
体の混合物からなることを特徴とする研磨材。
1. An abrasive material comprising a mixture of flat synthetic resin granules, acicular synthetic resin granules, and granular synthetic resin granules, each of which has a large number of edges.
JP22923082A 1982-08-20 1982-12-28 Abrasive material Granted JPS59124572A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP22923082A JPS59124572A (en) 1982-12-28 1982-12-28 Abrasive material
US06/522,736 US4548617A (en) 1982-08-20 1983-08-12 Abrasive and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22923082A JPS59124572A (en) 1982-12-28 1982-12-28 Abrasive material

Publications (2)

Publication Number Publication Date
JPS59124572A JPS59124572A (en) 1984-07-18
JPH0360631B2 true JPH0360631B2 (en) 1991-09-17

Family

ID=16888867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22923082A Granted JPS59124572A (en) 1982-08-20 1982-12-28 Abrasive material

Country Status (1)

Country Link
JP (1) JPS59124572A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8408969B2 (en) 2007-07-04 2013-04-02 Fuji Manufacturing Co., Ltd. Abrasive for blast processing and blast processing method employing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59201487A (en) * 1983-04-30 1984-11-15 イビデン株式会社 Method of chamfering printed circuit board

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721268A (en) * 1980-07-11 1982-02-03 Nitto Electric Ind Co Ltd Resin particles for use in sand blasting process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8408969B2 (en) 2007-07-04 2013-04-02 Fuji Manufacturing Co., Ltd. Abrasive for blast processing and blast processing method employing the same

Also Published As

Publication number Publication date
JPS59124572A (en) 1984-07-18

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