JPH0361363A - Ion plating device - Google Patents

Abstract

PURPOSE:To obtain the device capable of uniformly forming a thin film even on the surface of a substrate of intricate shape such as a U-shaped substrate by making a substrate holder freely rotatable and providing a driving mechanism capable of rotating and oscillating plural counter electrodes in synchronization with the rotation of the holder. CONSTITUTION:Plural counter electrodes 25 arranged concentrically to the center of a vacuum chamber 1 are rotated 11, inclined and opposed to a substrate 42 held by the substrate holder 39 in the desired positional relation and angle. A magnetic field is generated from a magnet 26 contained in each electrode 25. The plasma 47 introduced into the chamber 1 from a plasma source 7 is focused with high density on the surface of the substrate 42 by each electrode 25, and the surface of the substrate 42 is simultaneously irradiated with the plasma 47 from different angles. Consequently, the material vaporized from a vapor-deposition source 3 arranged in the chamber 1 is efficiently ionized with the plasma 47, and the ionized material is sent to the substrate 42 from different angles. A cooling water passage is formed in the pipe member of the rotating mechanism 11 to cool the magnet 26 in the electrode 25 exposed to the high temp. plasma 47.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an ion plating apparatus, and particularly to an ion plating apparatus for forming a thin film on the surface of a substrate having a complex shape.

[Prior Art and Section 8] For example, in structural materials made of various metals, ceramics, etc., various metal thin films are formed for the purpose of hardening the surface of the base material or imparting gloss. It is. When forming a film on such a base +4, the following film thickness control method has conventionally been adopted.

■Film thickness sensor method The material to be deposited in a crucible placed in a vacuum chamber is irradiated with an electron beam or the like to evaporate, the amount of evaporation is detected by a film thickness sensor, and the output of the electron beam is adjusted to A uniform thin film is formed over the entire substrate placed on the substrate.

■ By rotating or revolving the base material holder placed above the crucible placed in the vacuum chamber, the difference in the amount of vapor deposition between the center and peripheral parts of the base material is reduced and a uniform thin film is created over the entire base material. Form.

However, although the film thickness sensor method (2) and the base material rotation method (2) can control the overall average film thickness, it is not possible to control the film thickness at any arbitrary location. For this reason, it becomes difficult to form a thin film with a uniform thickness on the surface of a complex-shaped base material.

For this reason, the hollow cathode method, the reactive ion plating method, and the plasma gun method are known as methods for forming a thin film on the surface of a complex-shaped base material. However, each method has the following problems.

In the above-mentioned hollow cathode method, since the negative voltage at the discharge part is high, a hole may be opened, and in the case of a U-shaped substrate, the substrate voltage decreases to about 70% of the predetermined value due to the hollow cathode phenomenon. The adhesion force is also very low. However, with this method, it is not possible to make the film thickness uniform with respect to the basic shape of the shape, and it is not possible to perform partial film thickness control.

In the reactive ion plating method, since the ionization electrode (+) is located at the bottom, the substrate voltage may be significantly reduced due to the hollow cathode phenomenon in the case of a hole being opened or a U-shaped substrate. Also, the film quality is not good.

In the plasma gun method, since the vacuum chamber pressure can be lower than that of the plasma gun, it is possible to suppress the drop in the base material voltage due to the holocathode phenomenon, but since the plasma is formed in a fixed horizontal direction within the chamber, Shadows are created in the holes and U-shaped portions, and the plasma is not introduced deep inside, and a film can only be formed on substrates with shallow holes.

The present invention has been made in order to solve the above-mentioned conventional problems, and provides an ion plating apparatus that can uniformly form a thin film on the surface of a substrate with holes or a complex shape such as a U-shape. This is what I am trying to do.

[Means for Solving the Problems] An ion plating apparatus according to the present invention includes a vacuum chamber, a substrate holder disposed within the chamber, a deposition source disposed near the bottom of the chamber, and the a plasma generation source for introducing plasma into the chamber; and a plasma generation source arranged concentrically with respect to the center of the chamber,
A plurality of counter electrodes each having a built-in magnet for focusing the plasma drawn into the chamber from the plasma generation source onto the surface of the base material held in the holder, each of which is rotated and oscillated, and an internal and a drive mechanism having a pipe member in which a cooling water flow path for cooling the magnets of each of the opposing electrodes is formed.

Further, the ion plating apparatus according to the present invention is characterized in that a magnet is arranged in the vacuum chamber so as to surround the base material held by the base material holder.

Furthermore, in the ion plating apparatus according to the present invention, the substrate holder has a rotatable structure, and the drive mechanism has a structure to rotate and swing the counter electrode in synchronization with the rotation of the holder. It is characterized by this.

[Operation] According to the present invention, a plurality of opposing electrodes arranged concentrically with respect to the center of a vacuum chamber are rotated and swung by a drive mechanism, and a desired target is applied to a substrate held in a substrate holder. Plasma introduced into the chamber from a plasma generation source is raised to the surface of the base material by each of the opposed electrodes by generating a magnetic field from a magnet built into each of the opposed electrodes. It is possible to focus the plasma with high density, and at the same time, the plasma can be irradiated onto the substrate surface from multiple directions. Therefore, the evaporation material evaporated from the evaporation source disposed in the chamber can be efficiently ionized by the plasma, and the ionized evaporation material can be introduced into the base material from multiple directions. Furthermore, by forming a cooling water flow path inside the tube member of the drive mechanism, it is possible to cool the magnet inside the counter electrode that is exposed to high-temperature plasma through the flow path, so that the magnetic force of the magnet can be maintained for a long period of time. Can be maintained stably. Therefore, the ionized vapor deposition material can easily penetrate into the complex-shaped base material held in the holder, allowing a thin film of uniform thickness to be efficiently and over a long period of time over the entire surface of the base material. An ion plating apparatus capable of stably forming a film can be obtained.

Furthermore, by arranging magnets in the vacuum chamber so as to surround the base material held by the base material holder, if the holder holds a complex-shaped base material with holes, for example, the opposite The evaporation material ionized by the electrode and plasma can be efficiently focused on the inner surface of the hole of the base material by the magnetic field of the magnet, so that a thin film with a uniform thickness is formed not only on the surface of the base material but also on the inner surface of the hole. can.

Furthermore, the substrate holder is configured to be rotatable, and the drive mechanism is configured to rotate and oscillate the counter electrode in synchronization with the rotation of the holder. Since the density and shape of the plasma can be controlled in response to the shape (outer surface shape) of the base material held in the holder, a thin film with a more even thickness can be efficiently formed over the entire surface of a complex-shaped base material. .

[Example] Hereinafter, an example of the present invention will be described with reference to FIGS. 1 to 3.

FIG. 1 is a schematic cross-sectional view of an ion plating apparatus showing an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view of FIG. 1,
FIG. 3 is a sectional view showing the counter electrode of FIG. 1 and its driving mechanism. i in the figure is a vacuum chamber, and the lower side wall of this chamber l communicates with a vacuum pump (not shown) for maintaining the inside of the chamber l at a predetermined degree of vacuum υ1:
A trachea 2 is provided. Moreover, 3 in the figure is a vapor deposition source.

This vapor deposition source 3 includes a crucible 4 installed at the bottom of the chamber 1, an electron gun 5 installed at the lower side wall of the chamber 1 for irradiating the crucible 4 with an electron beam,
The deflection coil 6 is arranged near the upper part of the crucible 4 and is configured to deflect the electron beam from the electron gun 5 and irradiate the vapor deposition material in the crucible 4 with the deflection coil 6.

Further, a plasma gun 7 as a plasma generation source is provided on the outer wall of the chamber l.
An inlet pipe (not shown) for introducing a predetermined gas 8 such as nitrogen (N2) is provided at the rear of the unit. Note that a plasma constriction section 9 is provided on the side wall of the chamber 1 in which the plasma gun 7 is provided. A cylindrical magnet 10a for preventing the plasma drawn from the plasma gun 7 from diffusing is installed near the connection of the plasma gun 7 with the chamber 1 and on the outer wall of the chamber 1 facing the plasma gun 7.
lOb is provided respectively. On the side wall of the chamber 1, there are a plurality of units (
For example, five (5) horizontal drive units are installed penetratingly and located on substantially the same plane as the installation location of the plasma gun 7.

The drive mechanism 11 includes an annular support plate 12 attached to the side wall 1a of the chamber 1, as shown in FIG. A cylindrical support member 13 is fixed to the surface of the support plate 12 on the outside of the chamber i by screws 17 (not shown). This support member 13 has an O-ring 15 attached to the horizontal drive tube 14.
A screw 17 is cut into the vicinity of the end of the drive tube 14 on the side opposite to the chamber side wall 1a, and A hole 19 is formed into which a stop pin 18 inserted from the support member 13 is fitted.A threaded portion 21 of a movable handle 20 is screwed into the thread 17 of the drive tube 14, and The front surface of 20 is the cylindrical support member 13
It is in contact with the rear end surface of. That is, the handle 20
By rotating the drive tube I4, which is screwed together with the threaded portion 21 through the screw 17 and has the stop pin 18 pushed into the groove 19, is moved horizontally along the cylindrical support member 13. It has become.

Inside the horizontal drive tube 14, a rotary tube 22 is provided with a bearing 23.
It is rotatably supported via the shaft. Note that the drive tube 1 is provided on the outer circumferential surface of the rotary tube 22 at both ends of the drive tube 14.
A retaining ring 24 is provided for driving the rotary tube 22 in the same direction as the rotating tube 4 is driven in the horizontal direction. The distal end side (inside the chamber I) of the rotary tube 22 is bent, and a counter electrode 25 is fixed to the distal end. This counter electrode 25 has a disk shape and has a ring-shaped permanent magnet 26 built therein. A key groove 27 is formed on the outer peripheral surface of the rear end of the rotary tube 22, and a gear 28 that is engaged with the #27 is attached to the rotary tube 22.

A gear 3I rotated by a pulse motor 29 and a shaft 30 is meshed with this gear 28. The pulse motor 29 is driven in synchronization with the rotation of the base material so as to follow the surface shape of the base material being held and rotated by a holder, which will be described later.

A cylinder 33 is inserted into the center of the rotary tube 22) and is supported by annular supports 32 provided at both ends of the rotary tube 22, and serves as an outgoing path for cooling water.
A cylindrical space 34, which serves as a return path, is formed between the inner surface of the tube and the inner surface of the tube. The tip side of the cylinder 33 communicates with the artificial side of a permanent magnet cooling channel (not shown) formed in the counter electrode 25, and the cylindrical space 34 is connected to the exit of the cooling channel. communicated with the side. Further, a rotation joint 35 is provided on the rear end surface of the rotary tube 22 and on the outer circumferential surface near the rear end.
．． 36 are connected. One joint 35 has
A cooling water supply pipe 37 is connected to the other joint 36, and a cooling water discharge pipe 38 is connected to the other joint 36.

Further, a holder 39 for holding a base material is disposed near the plasma generation region in the chamber 1, and the holder 39 is supported and suspended by a rotating shaft 4o. The holder 39 is connected to the variable power source 41 so that a negative voltage is applied thereto.

Next, thin film formation using the ion plating apparatus of the present invention will be explained.

(2) A base material 42 made of 808304 and having a complicated shape as shown in FIG. 4 was prepared. This base material 42 has a central ring portion 43
Flat plate portions 44a and 44b are attached to the left and right sides of the plate, and a U-shaped block portion 45 is attached to the lower surface of one of the flat plate portions 44a.
It has a structure in which the back side of the body is joined. Subsequently, the complex-shaped base material 42 is held in the holder 39 in the vacuum chamber 1, while a predetermined vapor deposition material 4B is accommodated in the crucible 4.

■ Rotate the handle 20 of each part movement mechanism 11. As a result, the horizontal drive tube 14, which is screwed together with the threaded portion 21 of the handle 20 via the screw 17 and has the stop pin I8 inserted into the groove 19, moves horizontally along the cylindrical support member 13 (or fall back. As the drive tube 14 moves forward, the inner rotary tube 22 engaged with the drive tube 14 via the retaining ring 24 also moves in the same direction, and the opposing electrode 25 at the tip of the rotary tube 22 moves in the chamber l. Move to the specified position. After that, the cooling water is supplied from the cooling water supply pipe 37 to the cooling channel (not shown) in the counter electrode 25 through the cylinder 33, which is the outward path of the cooling water, to cool the built-in permanent magnet 26, and the cooled water is It is discharged through the cylindrical space 34 and the discharge pipe 38 as a return path.

(2) Operate a vacuum pump (not shown) to exhaust the gas in the chamber 1 through the exhaust pipe 2 to achieve a predetermined degree of vacuum. Subsequently, the electron gun 5 emits an electron beam, and the deflection coil 6 irradiates the electron beam onto the vapor deposition material 46 housed in the crucible 4 to melt and evaporate it.

(2) By supplying N28 as a plasma generating gas to the plasma gun 7, the plasma 47 is drawn out into the chamber l through the constriction part 9, and the cylindrical magnet 1 (la,
A magnetic field of I[lb focuses on a predetermined area within the chamber I. At the same time, while rotating the holder 39 and the base material 42 held thereon by the rotating shaft 4o and applying a negative voltage to the base material 42 from the variable power source 41, the pulse motor 29 of each control mechanism 11 is connected to the base material 42. Rotate in synchronization with the rotation of. As a result, the gear 31 of the information 30 pivotally attached to the pulse motor 29 rotates, and the gear 28 meshed with this rotates the rotary tube 22, and the position of each counter electrode 25 fixed to the bent portion at the tip thereof is rotated. It rotates and oscillates in synchronization with the rotation of the base material 42 so that its direction follows the surface shape of the base material 42.

By generating such a plasma 47 in the chamber 1 and applying a negative voltage from the variable power supply 41 to the base material 42, the positive ions in the plasma 47 are attracted to the base material 42 held by the holder 39 with a negative voltage. and the ions are transferred to the base material 4
Accelerates and collides with 2. At this time, the drive mechanism 11 described above
The plasma 47 is focused in accordance with the surface shape of the base material 42 by the magnetic field of the permanent magnet 26 in the counter electrode 25 which rotates and oscillates. That is, in the base material 42 shown in FIG. 4, the counter electrode 25 is directed downward to weaken the plasma density with respect to the flat plate portion 44b, and the plasma enters the inner surface of the U-shaped block portion 45. Counter electrode 2
5 faces the block portion 45. When the vapor deposition material evaporated by the crucible 3 described above reaches the plasma 47 quenching area whose density is controlled in accordance with the shape of each member of the base material 42, it is ionized. The positively ionized vapor deposition material in the plasma 47 is transferred to the holder 39 to which the magnetic field from the permanent magnet 26 of each counter electrode 25 and a negative voltage are applied.
The suction force is uniformly and efficiently accelerated and collided over the entire base material 42. As a result, a thin film having a uniform thickness can be efficiently formed over the entire base material 42 including the flat plate portion 44b1 and the U-shaped block portion 45.

In addition, in the ion plating apparatus having the above structure, by forming an outward path and a return path for the cooling water in the rotary tube 22 of the drive mechanism II for rotating and oscillating the opposing electrode 25, it is possible to The permanent magnet 26 inside the electrode 25 can be cooled with an extremely simple structure.
6, it is possible to stably generate a magnetic field for focusing plasma over a long period of time.

Next, another embodiment of the present invention will be described with reference to FIG.

The ion plating apparatus shown in FIG. 5 has a structure in which cylindrical electromagnets 48 are arranged to surround a base material (for example, a cylindrical base material) 42° held by a base material holder 39'.

According to this configuration, the plasma 47 drawn into the chamber 1 is transferred to the base material 42 by the permanent magnet 26 in the counter electrode 25.
It is possible to focus the light on the cylindrical base material 42' side and narrow it into a rod shape inside the cylindrical base material 42' by the cylindrical electromagnet 48 around the base material 42'. As a result, the ionized vapor deposition material can be introduced not only to the outer circumferential surface of the cylindrical substrate 42' but also to the inner circumferential surface, so that a thin film having a uniform thickness can be formed over the entire substrate 42'.

In addition, when forming a thin film on the inner surface of a curved cylinder using the ion plating apparatus shown in FIG. I can do it.

In addition, in the above embodiment, a permanent magnet was built into the opposing electrode, but an electromagnet may be used instead of the permanent magnet.

[Effects of the Invention] As detailed above, according to the present invention, holes are opened,
It is possible to provide an ion plating apparatus that can stably and uniformly form a thin film over a long period of time on the surface of a base material having a complicated shape such as a U-shape.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view of an ion plating apparatus showing an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view of FIG. 1, and FIG. 4 are perspective views showing the base material used in this example, and FIG. 5 is a schematic sectional view of an ion plating apparatus showing another example of the present invention. 1... Vacuum chamber, 3... Evaporation source, 4... Crucible, 7... Plasma gun, Shellfish... Drive mechanism, 14...
・Horizontal drive tube, 20... Handle, 22... Rotating tube, 25... Counter electrode, 26... Permanent magnet, 29
...Pulse motor, 33...Cylinder (outgoing path of cooling water)
, 34... Cylindrical space (return path of cooling water), 37... Supply pipe, 38... Discharge pipe, 39.39'... Boulder, 42.42゛... Base material, 44a, 44b...
- Flat plate part, 45... U-shaped block part, 46... Vapor deposition material, 47... Plasma, 48... Cylindrical electromagnet.

Claims (3)

[Claims] (1) a vacuum chamber, a substrate holder disposed within the chamber, a deposition source disposed near the bottom of the chamber, a plasma generation source for introducing plasma into the chamber, and a substrate holder disposed within the chamber; a plurality of opposing electrodes arranged concentrically with respect to the center of the holder and containing magnets for focusing plasma drawn into the chamber from the plasma generation source onto the surface of the base material held by the holder; An ion plating apparatus comprising: a drive mechanism that rotates and oscillates each of the opposing electrodes and has a tube member in which a cooling water flow path for cooling the magnets of each of the opposing electrodes is formed. (2) The ion plating apparatus according to claim 1, wherein a magnet is arranged in the vacuum chamber so as to surround the base material held by the base material holder. (3) The substrate holder has a rotatable structure, and the drive mechanism has a structure that rotates and swings the counter electrode in synchronization with the rotation of the holder. Or the ion plating apparatus according to 2.