JPH0361539B2 - - Google Patents
Info
- Publication number
- JPH0361539B2 JPH0361539B2 JP59234987A JP23498784A JPH0361539B2 JP H0361539 B2 JPH0361539 B2 JP H0361539B2 JP 59234987 A JP59234987 A JP 59234987A JP 23498784 A JP23498784 A JP 23498784A JP H0361539 B2 JPH0361539 B2 JP H0361539B2
- Authority
- JP
- Japan
- Prior art keywords
- heat exchanger
- manufacturing
- metal layer
- metal
- exchanger according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- 238000005304 joining Methods 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 description 33
- 239000003507 refrigerant Substances 0.000 description 21
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 238000005219 brazing Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/04—Tubular or hollow articles
- B23K2101/14—Heat exchangers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、熱交換体の製造法に係り、特にIC、
LSI、サイリスタなどの半導体装置の冷却器とし
て使用するのに好適な熱交換体の製造方法に関す
る。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a method for manufacturing a heat exchanger, and in particular to an IC,
The present invention relates to a method of manufacturing a heat exchanger suitable for use as a cooler for semiconductor devices such as LSIs and thyristors.
IC、LSIなど構成素子の集積度を上げれば上げ
るほど発熱量が多くなり性能の向上、維持を図る
ために冷却が必要である。冷却性能のよい冷却器
の開発が素子の集積度向上の決めてともなつてい
る。またサイリスタなどの半導体素子に於ても容
量の大型化に伴つていかに効率のよい冷却器を開
発するかが重要な課題となつている。従来半導体
素子は放熱フインを有する放熱板に取りつけるな
どの手段や特開昭56−88344号公報に示されるよ
うに冷水、液体窒素、フレオンなどの冷媒を放熱
板に通す方式が行われている。第７，８図には、
その代表例を示す。冷媒流入口８から入つた冷媒
は、素子４の下を流れ流出口１４に出て素子を冷
却する構造となつている。符号２は冷媒通路、３
は電気絶縁板、１は冷却器である。しかし前記し
たように素子の集積度が年々向上するため冷却性
能をさらに向上させる方策を取る必要にせまられ
ている。このため冷却器をいかなる構造にする
か、またそれをいかに製造するかについて従来よ
り研究開発が続けられてきているがいまだそれら
の要件を十分満足する技術が開発されていないの
が現状である。従来、この方式の冷却器を製造す
る方法として第７図に示すように冷却溝９を切削
加工によつて形成した冷却溝加工板５と上蓋用板
６の間にろう材７をはさみ、ろう付法により接合
し作製している。しかし機械的な切削加工やろう
付法が採用されるため冷却溝の深さや幅が小さく
できない。冷却溝の深さや幅を小さくするとろう
材の冷却溝への流入により冷却通路が閉塞され冷
媒が流れないという問題が生じる。冷媒通路の幅
を小さくしその数を多くすることは伝熱面積を大
にし冷却効率を高めるうえで重要な事項であるが
ろう付法によつてはまつたく不可能である。又、
冷却溝の幅や深さを小さくする接合方法として固
相接合の採用が考えられるが、高温で１Kg／mm2以
上の大きな接合圧力を必要とするため冷却通路が
変形し場合によつては、閉塞するという問題が生
じ、必ずしも信頼性のある接合法とは言えない。
As the degree of integration of components such as ICs and LSIs increases, the amount of heat generated increases, and cooling is required to improve and maintain performance. The development of coolers with better cooling performance is a key factor in increasing the degree of device integration. Furthermore, as the capacity of semiconductor devices such as thyristors increases, it has become an important issue to develop efficient coolers. Conventionally, semiconductor devices have been mounted on a heat radiating plate having heat radiating fins, or by passing a coolant such as cold water, liquid nitrogen, or Freon through the heat radiating plate as shown in Japanese Patent Application Laid-open No. 56-88344. In Figures 7 and 8,
A typical example is shown below. The refrigerant entering from the refrigerant inlet 8 flows under the element 4 and exits to the outlet 14 to cool the element. Code 2 is the refrigerant passage, 3
is an electric insulating plate, and 1 is a cooler. However, as mentioned above, as the degree of integration of elements increases year by year, it is necessary to take measures to further improve cooling performance. For this reason, although research and development have been carried out to date regarding the structure of the cooler and how to manufacture it, the current situation is that no technology has been developed that fully satisfies these requirements. Conventionally, as shown in FIG. 7, a method for manufacturing this type of cooler is to sandwich a brazing material 7 between a cooling groove machined plate 5 in which cooling grooves 9 are formed by cutting and an upper cover plate 6, It is manufactured by joining using the attachment method. However, since mechanical cutting and brazing methods are used, the depth and width of the cooling grooves cannot be made small. If the depth and width of the cooling grooves are reduced, a problem arises in that the cooling passages are blocked by the brazing filler metal flowing into the cooling grooves and the coolant does not flow. Reducing the width of the refrigerant passages and increasing their number is an important matter in increasing the heat transfer area and increasing the cooling efficiency, but this is completely impossible with the brazing method. or,
Solid state welding can be considered as a joining method to reduce the width and depth of the cooling groove, but since it requires a large joining pressure of 1 kg/mm 2 or more at high temperatures, the cooling passage may become deformed and, in some cases, The problem of occlusion occurs, and it is not necessarily a reliable joining method.
本発明の目的は、微細な冷媒通路を高密度に配
置しても該通路を潰すことなく接合できるように
した熱交換体の製造方法を提供することにある。
An object of the present invention is to provide a method for manufacturing a heat exchanger that allows fine refrigerant passages to be joined without crushing them even if they are arranged at high density.
本発明は、従来のように機械的切削加工やろう
付並びに固相接合による冷却通路形成には限界が
あり、これに代る新規な方式の冷却器を開発すべ
きであるとの考えから鋭意研究した結果、開発し
たものである。以下の説明において板とは、数
10μｍ以上の板厚の板を意味する。
The present invention was developed based on the idea that there are limitations to the conventional methods of forming cooling passages by mechanical cutting, brazing, and solid phase bonding, and that it is necessary to develop a new type of cooler to replace this. It was developed as a result of research. In the following explanation, a board is a number
It means a plate with a thickness of 10 μm or more.
板の材質は、熱伝導性の良い例えば銅、アルミ
ニウム又はそれらの合金、セラミツクス等により
なる。本発明は、第１図、第２図に示すように少
なくとも２枚の板の少なくとも１枚にフオトエツ
チングにより所定の微細な冷却溝９を形成しこれ
らの板を接合して冷媒通路を形成するものであ
る。接合に際して非酸化性雰囲気中でArイオン
ビーム等によつて接合面を清浄化した後、接合用
金属又は合金膜を蒸着又はスパツタ蒸着法により
形成して接合することにより気密性にすぐれかつ
微細な冷媒通路が得られることを見出したもので
ある。 The material of the plate is, for example, copper, aluminum, an alloy thereof, ceramics, etc., which have good thermal conductivity. In the present invention, as shown in FIGS. 1 and 2, predetermined fine cooling grooves 9 are formed in at least one of at least two plates by photoetching, and these plates are joined to form a refrigerant passage. It is something. At the time of bonding, after cleaning the bonding surfaces with an Ar ion beam or the like in a non-oxidizing atmosphere, a bonding metal or alloy film is formed by vapor deposition or sputter deposition, and the bonding is performed with excellent airtightness and fine particles. It has been discovered that a refrigerant passage can be obtained.
本発明においては、接合時冷媒通路となる冷却
溝形成にフオトエツチングを採用することにより
数10μｍ以上の冷却溝が自由に形成できるため従
来の機械的切削加工では不可能な微細な冷却溝の
形成が可能である。さらに非酸化性雰囲気中で
Arイオンビームなどによつて接合面を清浄化し
た後さらにその接合面に接合用金属又は合金膜を
冷却溝深さより薄く形成して接合することにより
冷媒通路を閉塞すること無く形成することができ
る。この技術的理由は以下の通りである。素材と
なる金属板表面は、通常汚染膜又は酸化皮膜で覆
われているためこのまま金属板を固相接合するに
は、極めて高い温度と高い接合圧力を要し、この
ため変形が生じやすい。特にアルミニウム又はそ
の合金よりなる板は緻密で安定な酸化膜を有する
ための接合は極めて困難である。そこで本発明者
等はこの問題について種々研究した結果非酸化性
雰囲気中でまず接合面の汚染膜、酸化膜をArイ
オンビーム等により除去清浄化したのち、更にそ
の接合面にCuに対しては素材より融点の低いCu
−Ti系、Alに対してはAl−Si系などの合金膜を
冷却溝深さより薄く蒸着またはスパツタ蒸着法に
より形成して接合する手段を講じることにより、
低接合圧力で接合でき、変形の恐れがなく、しか
も金属又は合金膜の溶融による冷却通路の閉塞も
なく強固な接合が可能であることを見出したもの
である。 In the present invention, by employing photoetching to form cooling grooves that serve as coolant passages during bonding, cooling grooves of several tens of micrometers or more can be freely formed, making it possible to form fine cooling grooves that are impossible with conventional mechanical cutting. is possible. Furthermore, in a non-oxidizing atmosphere
After cleaning the bonding surface with an Ar ion beam or the like, a metal or alloy film for bonding is further formed on the bonding surface to be thinner than the depth of the cooling groove, and bonding can be performed without blocking the refrigerant passage. . The technical reason for this is as follows. The surface of the metal plate used as the raw material is usually covered with a contaminated film or an oxide film, so solid-phase bonding of the metal plate as it is requires extremely high temperature and high bonding pressure, which tends to cause deformation. In particular, plates made of aluminum or its alloys have a dense and stable oxide film, so joining them is extremely difficult. Therefore, the inventors of the present invention conducted various research on this problem and found that after first removing and cleaning the contaminated film and oxide film on the bonding surface using Ar ion beam etc. in a non-oxidizing atmosphere, Cu has a lower melting point than the material
-For Ti and Al, by forming and bonding an Al-Si alloy film thinner than the depth of the cooling groove by vapor deposition or sputter deposition,
It has been discovered that bonding can be performed at low bonding pressure, there is no risk of deformation, and strong bonding is possible without clogging of cooling passages due to melting of the metal or alloy film.
冷却性能をいかに上げるかの一つの方策は、伝
熱面積をできるだけ上げることである。第３図は
冷却溝を１枚の板の両面にフオトエツチングによ
り形成しそれを他の２枚の間にはさみ接合した冷
却器の断面である。第４図は、２枚の板の一方に
それぞれフオトエツチングにより冷却溝を形成し
た後お互の冷却溝が千鳥状に配置されるようにず
らして接合して得た冷却器の断面である。このよ
うにすれば、微細な冷媒通路を、高密度に配置す
ることができ、さらに高性能な冷却器となる。 One way to improve cooling performance is to increase the heat transfer area as much as possible. FIG. 3 is a cross-sectional view of a cooler in which cooling grooves are formed by photoetching on both sides of one plate and are sandwiched and bonded between two other plates. FIG. 4 is a cross-sectional view of a cooler obtained by forming cooling grooves on one of two plates by photoetching, and then joining the plates with the cooling grooves staggered so that they are arranged in a staggered manner. In this way, fine refrigerant passages can be arranged with high density, resulting in a cooler with even higher performance.
素材として金属以外にセラミツクスを一方に配
置することも可能である。金属へのフオトエツチ
ング加工は容易であるため、金属の接合面へ冷却
溝を形成し電気絶縁性がありかつ高熱伝導のセラ
ミツクスを接合すれば、冷却性能の高い冷却器が
得られる。尚、すべて金属で冷却器を作つた時
は、セラミツクス基板上にLSIなどの素子を搭載
した後冷却器に接合固定することが望ましい。 In addition to metal, it is also possible to use ceramics as a material on one side. Since photoetching of metal is easy, a cooler with high cooling performance can be obtained by forming cooling grooves on the joint surface of metal and joining ceramics with electrical insulation and high thermal conductivity. When making a cooler entirely from metal, it is desirable to mount elements such as LSI on a ceramic substrate and then bond and fix them to the cooler.
以上は、フオトエツチングにより冷却溝を形成
した後金属又は合金膜を形成し接合を行う方法に
ついて説明したが、金属又は合金膜を形成した後
フオトエツチングを行つて所定の冷却溝を形成し
接合しても何ら問題はない。すなわちArイオン
ビーム等で清浄化処理を行うため非常に密着性の
良い金属又は合金膜が形成できるためフオトエツ
チング処理を行つても膜が剥離するなどの問題は
起らない。 The above describes a method in which cooling grooves are formed by photo-etching, then a metal or alloy film is formed, and then bonding is performed. There is no problem. That is, since cleaning treatment is performed using an Ar ion beam or the like, a metal or alloy film with very good adhesion can be formed, so that problems such as peeling of the film do not occur even when photoetching is performed.
本発明の実施例を第１図、第５図および第６図
を用いて説明する。
Embodiments of the present invention will be described using FIGS. 1, 5, and 6.
第１図に示す板厚0.5mmの銅板よりなる上蓋用
板６とフオトエツチングにより形成した幅0.1mm、
深さ0.06mmの冷却溝を有する銅板よりなる冷却溝
加工板５を用意し、これらを真空室に装入してそ
れぞれの接合面にArイオンビームを照射して清
浄化したのち、同一真空容器内でスパツタ蒸着に
よりCu−30％Ti合金膜を2μｍ付着させ第５図に
示すように重ねた。次に真空炉に装入し940℃、
0.2Kgｆ／mm2の接合圧力で１時間接合を行い一体
化し第６図に示すような冷却器を作製した。最後
に冷媒の流入口８、流出口１１となるパイプを点
線のようにろう付し冷却器１を完成した。冷媒通
路の閉塞もなく良好な冷媒通路が出きた。 An upper cover plate 6 made of a copper plate with a thickness of 0.5 mm as shown in Fig. 1 and a width of 0.1 mm formed by photo etching,
A cooling groove processed plate 5 made of a copper plate having cooling grooves with a depth of 0.06 mm is prepared, and after these are placed in a vacuum chamber and cleaned by irradiating each joint surface with an Ar ion beam, they are placed in the same vacuum chamber. A Cu-30%Ti alloy film of 2 .mu.m thick was deposited by sputter deposition inside the chamber and overlapped as shown in FIG. Next, charge it into a vacuum furnace and heat it to 940℃.
Bonding was carried out for 1 hour at a bonding pressure of 0.2 Kgf/mm 2 and the parts were integrated to produce a cooler as shown in Fig. 6. Finally, the pipes serving as the refrigerant inlet 8 and outlet 11 were brazed as shown by the dotted lines to complete the cooler 1. A good refrigerant passage was created with no blockages in the refrigerant passage.
なお冷媒の流入、流出口のパイプの接続は、金
属又は合金膜形成後パイプを冷媒流入口及び流出
口に配置し接合すれば前記ろう付処理を行わなく
ても板の接合時に一度に処理できる。符号１０は
冷媒だめ用溝である。 Note that the connection of the refrigerant inflow and outflow pipes can be done at the same time when joining the plates without performing the brazing process described above, by placing the pipes at the refrigerant inflow and outflow ports and joining them after forming the metal or alloy film. . Reference numeral 10 is a refrigerant reservoir groove.
なお、以上の説明は冷却器について行つたが、
加熱器においても全く同様であることは言うまで
もない。 Although the above explanation was about the cooler,
Needless to say, the same applies to heaters.
以上の説明から明らかなように本発明によれば
微細な冷媒通路、必要によつては0.1mm以下の冷
媒通路が自由に形成できるため、高い冷却効率を
有する冷却器を実現することができる。また、板
の接合面の清浄化および接合用合金膜の形成工程
をすべて非酸化性雰囲気中で行うことにより、接
合強度及び気密性の高い熱交換体を容易に製造で
きるという効果を有する。
As is clear from the above description, according to the present invention, fine refrigerant passages, if necessary, refrigerant passages of 0.1 mm or less can be freely formed, so that a cooler with high cooling efficiency can be realized. Furthermore, by performing all the steps of cleaning the bonding surfaces of the plates and forming the bonding alloy film in a non-oxidizing atmosphere, it is possible to easily manufacture a heat exchanger with high bonding strength and airtightness.
第１図及び第２図は、本発明の冷却部品を示す
平面及び側面断面図、第３図及び第４図は、本発
明の冷却器の斜視図、第５図は、本発明の積層状
況の概略斜視図、第６図は、本発明による冷却器
の完成品を示す斜視図、第７図は、従来の冷却器
の製造工程を示す斜視図、第８図は、従来の冷却
器の平面および断面図である。
１……冷却器、２……冷媒通路、３……電気絶
縁板、４……素子、５……冷却溝加工板、６……
上蓋用板、７……ろう材、８……冷媒流入口、９
……冷却溝、１０……冷媒だめ用溝、１１……冷
媒流出口。
1 and 2 are plan and side sectional views showing a cooling component of the present invention, FIGS. 3 and 4 are perspective views of a cooler of the present invention, and FIG. 5 is a stacked state of the present invention. 6 is a perspective view showing a completed product of the cooler according to the present invention, FIG. 7 is a perspective view showing the manufacturing process of a conventional cooler, and FIG. 8 is a perspective view showing the manufacturing process of a conventional cooler. FIG. 2 is a plan view and a cross-sectional view. DESCRIPTION OF SYMBOLS 1...Cooler, 2...Refrigerant passage, 3...Electric insulating board, 4...Element, 5...Cooling groove processed plate, 6...
Top cover plate, 7... Brazing metal, 8... Refrigerant inlet, 9
...Cooling groove, 10...Refrigerant reservoir groove, 11...Refrigerant outlet.
Claims (1)
と他の金属部材とを接触させて接合し、該接合に
よつて前記媒体の流通孔を形成する熱交換体の製
造法において、前記溝をフオトエツチングにより
形成する工程および前記接触面に前記金属部材の
いずれよりも低融点の金属層を介在させる工程を
含み、前記金属層の溶融温度以上且つ前記金属部
材が溶融しない温度で加熱して接合することを特
徴とする熱交換体の製造法。 ２ 特許請求の範囲第１項において、前記金属層
の厚さを前記溝の深さよりも小さくすることを特
徴とする熱交換体の製造法。 ３ 特許請求の範囲第１項において、前記接触面
を0.1〜0.3Kg／mm2の圧力で加圧した状態で接合す
ることを特徴とする熱交換体の製造法。 ４ 特許請求の範囲第１項において、前記金属層
をスパツタ蒸着によつて形成することを特徴とす
る熱交換体の製造法。 ５ 特許請求の範囲第１項において、前記金属層
が箔よりなることを特徴とする熱交換体の製造
法。 ６ 特許請求の範囲第１項において、前記接触面
の少なくとも一方に前記金属層を直接形成するこ
とを特徴とする熱交換体の製造法。 ７ 特許請求の範囲第１項において、前記金属部
材が銅よりなることを特徴とする熱交換体の製造
法。 ８ 特許請求の範囲第７項において、前記金属層
が銅−チタン合金よりなることを特徴とする熱交
換体の製造法。 ９ 熱交換媒体の通路となる溝を有する金属部材
と他の金属部材とを接触させて接合し、該接合に
よつて前記媒体の流通孔を形成する熱交換体の製
造法において、前記溝をフオトエツチングにより
形成する工程、前記接触面の少なくとも一方の面
に前記金属部材のいずれよりも低融点の金属層を
直接形成する工程および前記金属層の形成にあた
り金属部材の表面の酸化皮膜を除去する工程を含
み、前記金属の溶融温度以上且つ前記金属部材が
溶融しない温度で加熱して接合することを特徴と
する熱交換体の製造法。 １０ 特許請求の範囲第９項において、前記金属
部材を真空中に入れ、接触面にアルゴンイオンビ
ームを照射することによつて前記酸化皮膜除去処
理を行うことを特徴とする熱交換体の製造法。 １１ 特許請求の範囲第９項において、前記金属
層をスパツタ蒸着により形成することを特徴とす
る熱交換体の製造法。 １２ 特許請求の範囲第９項において、前記金属
層の厚さを前記溝の深さよりも小さくすることを
特徴とする熱交換体の製造法。[Scope of Claims] 1. Production of a heat exchanger in which a metal member having grooves that serve as passages for a heat exchange medium and another metal member are brought into contact and joined, and by the joining, a flow hole for the medium is formed. The method includes the step of forming the groove by photo-etching and the step of interposing a metal layer having a lower melting point than any of the metal members on the contact surface, and the temperature is higher than the melting temperature of the metal layer and the metal member does not melt. A method for manufacturing a heat exchanger, which is characterized by heating and bonding at a certain temperature. 2. The method of manufacturing a heat exchanger according to claim 1, characterized in that the thickness of the metal layer is smaller than the depth of the groove. 3. The method for manufacturing a heat exchanger according to claim 1, characterized in that the contact surfaces are joined under pressure of 0.1 to 0.3 Kg/mm 2 . 4. A method for manufacturing a heat exchanger according to claim 1, characterized in that the metal layer is formed by sputter deposition. 5. The method of manufacturing a heat exchanger according to claim 1, wherein the metal layer is made of foil. 6. The method of manufacturing a heat exchanger according to claim 1, characterized in that the metal layer is directly formed on at least one of the contact surfaces. 7. The method of manufacturing a heat exchanger according to claim 1, wherein the metal member is made of copper. 8. The method of manufacturing a heat exchanger according to claim 7, wherein the metal layer is made of a copper-titanium alloy. 9. A method for manufacturing a heat exchanger in which a metal member having grooves that serve as passages for a heat exchange medium and another metal member are brought into contact and bonded, and by the bonding, flow holes for the medium are formed. a step of forming by photo-etching, a step of directly forming a metal layer having a lower melting point than any of the metal members on at least one of the contact surfaces, and removing an oxide film on the surface of the metal member when forming the metal layer. 1. A method for producing a heat exchanger, comprising: heating and joining at a temperature higher than the melting temperature of the metal and at a temperature at which the metal member does not melt. 10 The method for manufacturing a heat exchanger according to claim 9, characterized in that the oxide film removal treatment is performed by placing the metal member in a vacuum and irradiating the contact surface with an argon ion beam. . 11. The method of manufacturing a heat exchanger according to claim 9, characterized in that the metal layer is formed by sputter deposition. 12. The method of manufacturing a heat exchanger according to claim 9, characterized in that the thickness of the metal layer is smaller than the depth of the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59234987A JPS61115666A (en) | 1984-11-09 | 1984-11-09 | Manufacturing method of heat exchanger |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59234987A JPS61115666A (en) | 1984-11-09 | 1984-11-09 | Manufacturing method of heat exchanger |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61115666A JPS61115666A (en) | 1986-06-03 |
| JPH0361539B2 true JPH0361539B2 (en) | 1991-09-20 |
Family
ID=16979371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59234987A Granted JPS61115666A (en) | 1984-11-09 | 1984-11-09 | Manufacturing method of heat exchanger |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61115666A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021261279A1 (en) | 2020-06-22 | 2021-12-30 | ネットビジネスコンサルティング株式会社 | Closure system and method for producing closure device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4568581B2 (en) * | 2004-11-02 | 2010-10-27 | カルソニックカンセイ株式会社 | Plate type heat exchanger |
| FR2879489B1 (en) * | 2004-12-21 | 2007-01-26 | Commissariat Energie Atomique | METHOD FOR PRODUCING AN ELEMENT COMPRISING FLUID CIRCULATION CHANNELS |
| JP2007127398A (en) | 2005-10-05 | 2007-05-24 | Seiko Epson Corp | Heat exchanger, heat exchanger manufacturing method, liquid cooling system, light source device, projector, electronic device unit, electronic equipment |
| CN109396587A (en) * | 2018-12-17 | 2019-03-01 | 扬州嘉和新能源科技有限公司 | A kind of method for welding of water-cooled plate |
-
1984
- 1984-11-09 JP JP59234987A patent/JPS61115666A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021261279A1 (en) | 2020-06-22 | 2021-12-30 | ネットビジネスコンサルティング株式会社 | Closure system and method for producing closure device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61115666A (en) | 1986-06-03 |
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| EXPY | Cancellation because of completion of term |