JPH0362502A - Manufacture of organic thick film resistor - Google Patents

Manufacture of organic thick film resistor

Info

Publication number
JPH0362502A
JPH0362502A JP1197439A JP19743989A JPH0362502A JP H0362502 A JPH0362502 A JP H0362502A JP 1197439 A JP1197439 A JP 1197439A JP 19743989 A JP19743989 A JP 19743989A JP H0362502 A JPH0362502 A JP H0362502A
Authority
JP
Japan
Prior art keywords
thick film
film resistor
curing
temperature
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1197439A
Other languages
Japanese (ja)
Other versions
JPH0748405B2 (en
Inventor
Akihiro Demura
彰浩 出村
Kinya Oshima
大島 欣也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP1197439A priority Critical patent/JPH0748405B2/en
Publication of JPH0362502A publication Critical patent/JPH0362502A/en
Publication of JPH0748405B2 publication Critical patent/JPH0748405B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Parts Printed On Printed Circuit Boards (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

PURPOSE:To obtain a highly crack-resistant organic thick film resistor with high adhesion to a substrate by performing defoaming at a lower temperature than the hardening initiation temperature of paste matrix resin before initial hardening with far infrared radiations. CONSTITUTION:Organic thick film resistor paste is applied to a resin substrate and defoamed before initial hardening with far infrared radiations. That is, the resistor film applied to the substrate is defoamed by exposing the substrate to an atmosphere at a little high temperature and lowering the viscosity of the paste. In defoaming in a high-temperature atmosphere, the desirable temperature range is 35-60 deg.C, within which the viscosity of paste matrix resin is lowered and which is lower than the hardening initiation temperature thereof.

Description

【発明の詳細な説明】[Detailed description of the invention]

(産業上の利用分野) 本発明は、電子部品が実装される基板等に形成される有
機厚膜抵抗体の製造方法に間する。 (従来の技術) 一般に、有機厚膜抵抗体用樹脂マトリックスとしては、
エポキシ、フェノール、ポリイミド等の有機熱硬化性樹
脂が用いられる。このため、塗布後の硬化は、100〜
250℃程度で行われる。 しかしながら、熱風乾燥炉等による熱硬化のみでは、得
られる有機厚膜抵抗体は耐熱性に乏しく、樹脂マトリッ
クスの硬化・架橋密度が不充分であり、半田付け、リフ
ロー 封止樹脂モールド等による抵抗値変化が著しい。 そこで、基板にダメージを与えること無く樹脂マトリッ
クスの硬化・架橋密度を上げ、得られる有機厚膜抵抗体
の耐熱性を向上させるために、特開昭58−10148
8号公報に開示されているような、有機厚膜抵抗体用ペ
ーストを塗布した後、加熱硬化する前に、遠赤外線によ
り初期硬化を行う有機厚膜抵抗体の製造方法が案出され
ている。 (発明が解決しようとする課題) 一方、有機厚膜抵抗体に限らず、ペーストを塗布する方
法としては、スクリーン印刷法、描画法、インクジェッ
ト法等種々あるが、スクリーン印刷法が一般的である。 この方法は、有I!繊維あるいは金属van+j!のメ
ツシュ上に必要充分量のペーストを置き、スキージゴム
によりメツシュ開口部より、ペーストを転写塗布する方
法である。従って、メツシュ上の必要充分量のペースト
は、印刷動作の度に、小さな気泡を巻き込み、気泡を混
入したまま塗布される。 ところが、遠赤外線による初期硬化は、熱風乾燥炉等に
よる熱硬化に比べ、基板表面での昇温速度が著しく速い
。このため、前述したスクリーン印刷法によって塗布さ
れた抵抗膜は、内部に気泡を含んだ状態で硬化されるこ
ととなり、その結果、形成された抵抗体は、抵抗値バラ
ツキが大きく、外部応力により容易にクラックの発生す
る物となる。 また、近年では、抵抗値許容公差±5%以下を必要とす
るアナログ混在回路用ハイブリットICに間しても、そ
の加工性、コスト等の問題から、セラミック基板から樹
脂基板への置き換えが増加する傾向にあり、搭載される
膜素子はレーザートリミングなどの抵抗値調整が行われ
る。この時、抵抗値は抵抗体特性(耐クラツク性、定格
電力等)確保のため、目標抵抗値+5.−60911.
−程度の範囲内に形成されなければならない。 しかしながら、通常のスクリーン印刷法による抵抗値精
度では充分であるとは言えず、特に複数同印刷法により
2種類以上の面積抵抗値(抵抗体幅および抵抗体長さを
等しく形成したときの抵抗値)を形成することは、更に
困難を極める。すなわち、印刷法による厚膜抵抗体の形
成は、印刷スキージゴムと版との摩擦熱、あるいは印刷
室内温度変化により、ペースト温度が変化し易い。この
結果、ペースト粘度が変化し、板間口部からのペースト
の排出量が変化するため、印刷膜厚にバラツキを生じ、
形成される抵抗値バラツキ(特にロフト間での抵抗値バ
ラツキ)が大きくなるのである。 本発明は、以上のような実情に鑑みてなされたものであ
り、その解決しようとする課題は、印刷法によって形成
された抵抗膜内の気泡による抵抗値バラツキ及びクラッ
クの発生と、ペースト粘度変化に基づく膜厚のバラツキ
による抵抗値バラツキである。 そして、本発明の目的とするところは、印刷法によって
形成する場合に、抵抗値バラツキが少なく、また、耐ク
ラツク性に優れた有機厚膜抵抗体の製造方法を提供する
ことにある。 (課題を解決するための手段) 以上のような課題を解決するために、請求項1の発明が
探った手段は、 「有機厚膜抵抗体用ペーストを塗布した後、加熱硬化す
る前に、遠赤外線により初lll1硬化を行う工程を有
する有機厚膜抵抗体の製造方法において、初期硬化を行
う前に、塗布膜より気泡を排除する脱泡工程を、ペース
トマトリックス樹脂硬化開始温度以下で行うことを特徴
とする有機厚膜抵抗体の製造方法」をその要旨とするも
のである。すなわち、 遠赤外線による初期硬化を行う前工程において、塗布膜
より気泡を排除する脱泡工程を行うのである。つまり、
塗布された抵抗膜付基板を減圧処理するか、あるいは若
干の高温雰囲気に投入し、ぺ−スト自体の粘度を低下さ
せることにより、膜内より気泡を排除するのである。た
だし、遠赤外線による初期硬化は、熱風乾燥炉等による
熱硬化と異なり、基板表面での昇温速度が著しく速く、
硬化籾量段階を短時間で行うことに特徴があるため、高
温雰囲気での脱泡は、ペーストマトリックス樹脂の粘度
が低下する温度であると同時に、硬化開始温度以下であ
ること、すなわち35〜60℃程度であることが望まし
い。 また、請求項2の発明が採った手段は、「有機厚膜抵抗
体用ペーストを塗布した後、加熱硬化する前に、遠赤外
線により初期硬化を行う工程を有する有機厚膜抵抗体の
製造方法において、初期硬化工程における遠赤外線の硬
化温度、照射時間のいずれか一方又は両方を変化させる
ことにより、形成される有機厚膜抵抗体の面積抵抗値を
制御することを特徴とする有機厚膜抵抗体の製造方法」
をその要旨とするものである。すなわち、前記の如き印
刷法における抵抗値バラツキの主たる原因は、ペースト
粘度制御が困難なためである。そこで、発明者らは長期
に渡る開発研究のなかで、初期硬化温度、時間が異なっ
た場合、形成される抵抗体の平均抵抗値に違いがあるこ
と、初期硬化が一定温度以上で行われた場合、抵抗値バ
ラツキ及び抵抗体特性に殆ど違いが無いこと等に注目し
、この特性を平均抵抗値制御に利用することを寸案した
。つまり、遠赤外線による?JI期硬化温度、照射時間
のいずれか一方又は両方を作為的に変化させることによ
り、形成される有機厚膜抵抗体の面積抵抗値を制御する
ようにしたのである。 (発明の作用) 本発明が以上のような手段を採ることによって、次のよ
うな作用がある。 まず、請求項1の発明にあっては、遠赤外線による初期
硬化前に、ヘースマトリックス樹脂硬化閏始温度以下で
脱泡を行うことにより、内部に気泡を殆ど含まない有機
厚膜素子を得る事が可能となる。 また、請求項2の発明にあっては、初期硬化における硬
化温度、あるいは照射時間を補正・制御することによっ
て、従来の印刷法では、その制御が困難とされていた高
抵抗11a(特に50にΩ以上)のロット間抵抗値バラ
ツキを著しく低減することが可能となり、全体での抵抗
値バラツキも±50%以下とすることが可能となる。 (実施例) 以下に、従来の製造方法(比較例〉と、本発明の実施例
との比較を行う。 比jE例 室温23±2℃、湿度50±15%に制御された印刷室
において、市販有機厚膜抵抗ペースト(株式会社アサヒ
化学研究所製、TUシリーズ)を用いて、スクリーン印
刷法によりNi/Auめっき電極を有する樹脂基板上に
塗布形成した。この後、基板表面温度が210℃となる
よう制御された遠赤外線硬化炉に投入し、初期硬化を行
った後、熱風式乾燥機内で170℃、60分の硬化処理
を行った。目標抵抗値は100にΩとし、印刷作業は、
−日一回、合計1o回行った。また、この時の抵抗体有
効サイズは1 x t mmとした。 実」1例」− 比較例1の製造工程において、遠赤外線による初期硬化
を行う前に、抵抗ペーストが印刷塗布された基板を45
℃に温度設定された熱風式乾燥機内に20分間放置し、
塗布膜より気泡を排除する以外は、比較例と同様の方法
で抵抗体を形成した。 寛凰檀1 実施例1の初期硬化工程において、抵抗ペーストを印刷
塗布された基板1枚を先行試験板として遠赤外線初期硬
化炉に投入し、初期硬化後抵抗値を測定し、経験補正式
により、後硬化処理後の抵抗値が100にΩとなる様に
、遠赤°外線初間硬化炉出力を調整する以外は、比較例
と同様の方法で抵抗体を形成した。 以上のような比較例、実施例1および実施例2の各方法
により製造された印刷抵抗体付基板中より、無作為に2
0個(合計200個)ずつの抵抗体を選出し、下記に示
す評価を行った。
(Industrial Application Field) The present invention relates to a method of manufacturing an organic thick film resistor formed on a substrate or the like on which electronic components are mounted. (Prior art) Generally, as a resin matrix for organic thick film resistors,
Organic thermosetting resins such as epoxy, phenol, and polyimide are used. For this reason, the curing after application is 100~
The temperature is about 250°C. However, by only thermal curing using a hot air drying oven, etc., the resulting organic thick film resistor has poor heat resistance, the curing/crosslinking density of the resin matrix is insufficient, and the resistance value due to soldering, reflow, sealing resin molding, etc. The changes are significant. Therefore, in order to increase the curing and crosslinking density of the resin matrix without damaging the substrate and improve the heat resistance of the resulting organic thick film resistor, we have developed
A method for manufacturing an organic thick film resistor has been devised, as disclosed in Publication No. 8, in which after applying a paste for an organic thick film resistor, initial curing is performed using far infrared rays before heat curing. . (Problem to be solved by the invention) On the other hand, there are various methods for applying paste, including screen printing, drawing, and inkjet methods, not only for organic thick film resistors, but screen printing is the most common method. . This method works! Fiber or metal van+j! In this method, a necessary and sufficient amount of paste is placed on the mesh, and the paste is transferred and applied from the opening of the mesh using a squeegee rubber. Therefore, the necessary and sufficient amount of paste on the mesh is coated with small air bubbles mixed in with each printing operation. However, initial curing using far infrared rays increases the rate of temperature rise at the substrate surface significantly faster than thermal curing using a hot air drying oven or the like. For this reason, the resistive film applied by the above-mentioned screen printing method is cured with air bubbles inside, and as a result, the formed resistor has large variations in resistance value and is easily affected by external stress. This will cause cracks to occur. In addition, in recent years, ceramic substrates have been increasingly replaced with resin substrates due to problems such as processability and cost in hybrid ICs for analog mixed circuits that require resistance tolerances of ±5% or less. There is a tendency for the resistance value of mounted membrane elements to be adjusted by laser trimming or other methods. At this time, the resistance value is set to the target resistance value + 5.0 to ensure resistor characteristics (cracking resistance, rated power, etc.). -60911.
- Must be formed within a certain range. However, it cannot be said that the resistance value accuracy obtained by the ordinary screen printing method is sufficient, and in particular, two or more types of area resistance values (resistance values when the resistor width and resistor length are formed equal) are obtained by using the same multiple printing method. It is even more difficult to form. That is, when forming a thick film resistor by a printing method, the paste temperature tends to change due to frictional heat between the printing squeegee rubber and the plate or changes in the temperature inside the printing room. As a result, the paste viscosity changes and the amount of paste discharged from the board opening changes, resulting in variations in printed film thickness.
This increases the variation in resistance values formed (particularly the variation in resistance values between lofts). The present invention has been made in view of the above-mentioned circumstances, and the problems to be solved are the resistance value variation and the occurrence of cracks due to air bubbles in the resistive film formed by the printing method, and the change in paste viscosity. This is the resistance value variation due to the film thickness variation based on . An object of the present invention is to provide a method for manufacturing an organic thick film resistor that has less variation in resistance value and excellent crack resistance when formed by a printing method. (Means for Solving the Problems) In order to solve the above problems, the invention of claim 1 explores the following: ``After applying the organic thick film resistor paste and before heating and curing it, In a method for manufacturing an organic thick film resistor that includes a step of performing initial curing with far infrared rays, before performing initial curing, a defoaming step of removing air bubbles from the coating film is performed at a temperature below the paste matrix resin curing start temperature. A method for manufacturing an organic thick film resistor characterized by the following. That is, before the initial curing with far infrared rays, a defoaming step is performed to remove air bubbles from the coating film. In other words,
The coated substrate with a resistive film is subjected to a reduced pressure treatment or placed in a slightly high temperature atmosphere to reduce the viscosity of the paste itself, thereby eliminating air bubbles from within the film. However, initial curing using far infrared rays differs from thermal curing using a hot air drying oven, etc., as the rate of temperature rise on the substrate surface is significantly faster.
Since the hardening grain amount stage is characterized by being carried out in a short period of time, defoaming in a high temperature atmosphere must be at a temperature at which the viscosity of the paste matrix resin decreases and at the same time below the hardening start temperature, i.e. 35 to 60°C. It is desirable that the temperature is around ℃. In addition, the means taken by the invention of claim 2 is ``a method for manufacturing an organic thick film resistor which includes a step of performing initial curing with far infrared rays after applying the organic thick film resistor paste and before heating and curing. The organic thick film resistor is characterized in that the area resistance value of the formed organic thick film resistor is controlled by changing either or both of the curing temperature and irradiation time of far infrared rays in the initial curing step. How the body is manufactured
Its gist is as follows. That is, the main cause of the resistance value variation in the above printing method is that it is difficult to control the paste viscosity. Therefore, during long-term development research, the inventors discovered that when the initial curing temperature and time differ, the average resistance value of the formed resistor differs, and that the initial curing was performed above a certain temperature. In this case, we focused on the fact that there was almost no difference in resistance value variation and resistor characteristics, and we planned to use these characteristics to control the average resistance value. In other words, by far infrared rays? By intentionally changing either or both of the JI stage curing temperature and irradiation time, the sheet resistance value of the formed organic thick film resistor was controlled. (Actions of the Invention) By adopting the above-described measures, the present invention has the following effects. First, in the invention of claim 1, an organic thick film element containing almost no air bubbles inside is obtained by performing defoaming at a temperature below the curing start temperature of the Haas matrix resin before initial curing with far infrared rays. things become possible. In addition, in the invention of claim 2, by correcting and controlling the curing temperature or irradiation time in the initial curing, the high resistance 11a (especially 50 It becomes possible to significantly reduce the variation in resistance value between lots (Ω or more), and it is also possible to reduce the variation in resistance value as a whole to ±50% or less. (Example) Below, a comparison will be made between a conventional manufacturing method (comparative example) and an example of the present invention. Ratio Example In a printing room controlled at a room temperature of 23 ± 2°C and a humidity of 50 ± 15%, A commercially available organic thick film resistor paste (manufactured by Asahi Chemical Laboratory Co., Ltd., TU series) was coated onto a resin substrate having Ni/Au plating electrodes by screen printing.After this, the substrate surface temperature was raised to 210°C. After initial curing in a far-infrared curing oven controlled so that ,
- Once a day, a total of 10 times. Further, the effective size of the resistor at this time was 1 x t mm. Example 1 - In the manufacturing process of Comparative Example 1, the substrate printed with the resistive paste was heated for 45 minutes before initial curing with far infrared rays.
Leave it in a hot air dryer set at ℃ for 20 minutes.
A resistor was formed in the same manner as in the comparative example except that air bubbles were removed from the coating film. Kanodan 1 In the initial curing process of Example 1, one board printed with the resistance paste was placed in a far-infrared initial curing furnace as a preliminary test plate, and the resistance value was measured after initial curing, and the resistance was calculated using the empirical correction formula. A resistor was formed in the same manner as in the comparative example, except that the output of the far-infrared ray initial curing furnace was adjusted so that the resistance value after the post-curing treatment was 100Ω. Two samples were randomly selected from among the printed resistor-equipped substrates manufactured by the methods of Comparative Example, Example 1, and Example 2 as described above.
0 resistors (200 in total) were selected and evaluated as shown below.

【ボイド発生検査】[Void occurrence inspection]

実体顕@鏡により直径0.3mm以上のボイド数を検査
した。その結果を表1に示す。 この表により解るように、実施例1又は実施例2により
製造された抵抗体中には気泡がほとんどみられなかった
。 表1 ボイド発生量(個)
The number of voids with a diameter of 0.3 mm or more was inspected using a stereoscopic microscope. The results are shown in Table 1. As can be seen from this table, almost no air bubbles were observed in the resistor manufactured in Example 1 or Example 2. Table 1 Amount of voids generated (pieces)

【抵抗値バラツキの測定】[Measurement of resistance value variation]

抵抗値を測定し、以下の計算式により基板内の抵抗値バ
ラツキおよび全体での抵抗値バラツキを算出した。その
結果を表2に示す。 この表により解るように実施例1又は実施例2により製
造された抵抗体の抵抗値バラツキは比較例に比して減少
した。 表2 抵抗値バラツキ (%) (発明の効果) 以上詳述したように、請求項1に係る有機厚膜抵抗体の
製造方法は、 「有機厚膜抵抗体用ペーストを塗布した
後、加熱硬化する前に、遠赤外線により初期硬化を行う
工程を有する有機厚膜抵抗体の製造方法において、初期
硬化を行う前に、塗布膜より気泡を排除する脱泡工程を
、ペーストマトリックス樹脂硬化開始温度以下で行うこ
と」をその構成上の特徴としている。 従って、この発明によれば、ベースマトリックス樹脂硬
化開始温度以下で脱泡を行うことにより、内部に気泡を
殆ど含まない有機厚膜素子を得ることが可能となるため
、オーバーコート印刷、プレス打抜き加工等の外部応力
あるいは、半田付け、リフロー炉投入等の熱衝撃等に対
する耐クラツク性、基板との密着性に優れた有機厚膜抵
抗体を得ることができ、また、抵抗値バラツキの少ない
有機厚膜抵抗体を得ることができる。 また、請求項2に係る有機厚膜抵抗体の製造方法は、 
「有機厚膜抵抗体用ペーストを塗布した後、加熱硬化す
る前に、遠赤外線により初期硬化を行う工程を有する有
機厚膜抵抗体の製造方法において、初期硬化工程におけ
る遠赤外線の硬化温度、照射時間のいずれか一方又は両
方を変化させることにより、形成される有機厚膜抵抗体
の面積抵抗値を制御すること」をその構成上の特徴とし
ている。 従って、この発明によれば、初期硬化における硬化温度
あるいは、照射時間を補正・制御することによって、印
刷ロット間での抵抗値バラツキを補正低減することが可
能となるため、複数回印刷法による2種類以上の面積抵
抗値を必要とする場合においても、抵抗値トリミング可
能範囲内に印刷形成することができ、薄物樹脂製プリン
ト配線板対応の高精度有機厚膜抵抗体の製造方法として
、きわめて有用である。 以  上
The resistance value was measured, and the resistance value variation within the substrate and the resistance value variation as a whole were calculated using the following calculation formula. The results are shown in Table 2. As can be seen from this table, the resistance value variation of the resistor manufactured according to Example 1 or Example 2 was reduced compared to the comparative example. Table 2 Resistance value variation (%) (Effects of the invention) As detailed above, the method for manufacturing an organic thick film resistor according to claim 1 is as follows. In a method for manufacturing an organic thick film resistor that includes a step of performing initial curing with far infrared rays, before initial curing, a defoaming step of removing air bubbles from the coating film is performed at a temperature below the paste matrix resin curing start temperature. Its structural feature is "to do something". Therefore, according to the present invention, by degassing at a temperature below the base matrix resin curing start temperature, it is possible to obtain an organic thick film element containing almost no air bubbles inside, so it is possible to perform overcoat printing, press punching, etc. It is possible to obtain an organic thick film resistor that has excellent crack resistance against external stresses such as heat shocks caused by soldering, reflow oven, etc., and excellent adhesion to the substrate. A membrane resistor can be obtained. Further, the method for manufacturing an organic thick film resistor according to claim 2 includes:
``In a method for manufacturing an organic thick film resistor that includes a step of performing initial curing with far infrared rays after applying a paste for organic thick film resistors and before heating and curing, the curing temperature of far infrared rays in the initial curing step, the irradiation Its structural feature is that the area resistance value of the formed organic thick film resistor is controlled by changing one or both of the times. Therefore, according to the present invention, by correcting and controlling the curing temperature or irradiation time during initial curing, it is possible to correct and reduce resistance value variations between printing lots. Even when more area resistance values are required, printing can be performed within the resistance value trimming range, making it extremely useful as a manufacturing method for high-precision organic thick film resistors compatible with thin resin printed wiring boards. It is. that's all

Claims (1)

【特許請求の範囲】 1).有機厚膜抵抗体用ペーストを塗布した後、加熱硬
化する前に、遠赤外線により初期硬化を行う工程を有す
る有機厚膜抵抗体の製造方法において、 初期硬化を行う前に、塗布膜より気泡を排除する脱泡工
程を、ペーストマトリックス樹脂硬化開始温度以下で行
うことを特徴とする有機厚膜抵抗体の製造方法。 2).有機厚膜抵抗体用ペーストを塗布した後、加熱硬
化する前に、遠赤外線により初期硬化を行う工程を有す
る有機厚膜抵抗体の製造方法において、 初期硬化工程における遠赤外線の硬化温度、照射時間の
いずれか一方又は両方を変化させることにより、形成さ
れる有機厚膜抵抗体の面積抵抗値を制御することを特徴
とする有機厚膜抵抗体の製造方法。
[Claims] 1). In a method for manufacturing an organic thick film resistor that includes a step of performing initial curing with far infrared rays after applying a paste for organic thick film resistor and before heating and curing, air bubbles are removed from the coating film before initial curing. A method for manufacturing an organic thick film resistor, characterized in that a defoaming step is performed at a temperature below the temperature at which a paste matrix resin begins to harden. 2). In a method for manufacturing an organic thick film resistor, which includes a step of performing initial curing with far infrared rays after applying a paste for organic thick film resistor and before heating and curing, the curing temperature and irradiation time of far infrared rays in the initial curing step are as follows: A method for manufacturing an organic thick film resistor, which comprises controlling the area resistance value of the formed organic thick film resistor by changing one or both of the following.
JP1197439A 1989-07-29 1989-07-29 Method for manufacturing organic thick film resistor Expired - Lifetime JPH0748405B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1197439A JPH0748405B2 (en) 1989-07-29 1989-07-29 Method for manufacturing organic thick film resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1197439A JPH0748405B2 (en) 1989-07-29 1989-07-29 Method for manufacturing organic thick film resistor

Publications (2)

Publication Number Publication Date
JPH0362502A true JPH0362502A (en) 1991-03-18
JPH0748405B2 JPH0748405B2 (en) 1995-05-24

Family

ID=16374528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1197439A Expired - Lifetime JPH0748405B2 (en) 1989-07-29 1989-07-29 Method for manufacturing organic thick film resistor

Country Status (1)

Country Link
JP (1) JPH0748405B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136318A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Method of mounting condenser
JPS58101488A (en) * 1981-12-11 1983-06-16 北陸電気工業株式会社 Method of drying printed resistor
JPS63275102A (en) * 1987-05-07 1988-11-11 Aisin Seiki Co Ltd Resistance value adjusting method of variable resistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136318A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Method of mounting condenser
JPS58101488A (en) * 1981-12-11 1983-06-16 北陸電気工業株式会社 Method of drying printed resistor
JPS63275102A (en) * 1987-05-07 1988-11-11 Aisin Seiki Co Ltd Resistance value adjusting method of variable resistor

Also Published As

Publication number Publication date
JPH0748405B2 (en) 1995-05-24

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