JPH0362513B2 - - Google Patents
Info
- Publication number
- JPH0362513B2 JPH0362513B2 JP57125628A JP12562882A JPH0362513B2 JP H0362513 B2 JPH0362513 B2 JP H0362513B2 JP 57125628 A JP57125628 A JP 57125628A JP 12562882 A JP12562882 A JP 12562882A JP H0362513 B2 JPH0362513 B2 JP H0362513B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- processing
- detection means
- amount
- measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012545 processing Methods 0.000 claims description 58
- 238000002834 transmittance Methods 0.000 claims description 22
- 238000005259 measurement Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims 11
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000003754 machining Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Description
【発明の詳細な説明】
本発明はレーザ加工装置に関するものである。
特に、レーザ光の反射率をモニターすることによ
り被加工物に実効的に入射するレーザパワーを一
定にするレーザ加工装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a laser processing device.
In particular, the present invention relates to a laser processing apparatus that keeps the effective laser power incident on a workpiece constant by monitoring the reflectance of laser light.
第１図は、従来のレーザ加工装置による加工の
問題点を示した例である。レーザ発振器１から出
たレーザ光２は、ビーム移動、走査等を行なう中
間光学系３を通つて対物レンズ４に導かれ、集光
されて被加工物５に照射され、加工が行われる。
ところが被加工物５が半導体IC等の場合基板や
配線の上には絶縁やパシベーシヨンのためSi3N4
やSiO2などの誘電体薄膜６が１層ないし数層つ
けられており、これらの膜の厚さによる干渉効果
により、照射光の反射率が周期的に変動する。す
なわち、加工部への実効的な入射光の強度が変化
し、膜厚により加工条件が変わり、最適加工が行
われないということが起つていた。このため加工
の歩留まりを抵下させ、実用上の大きな問題とな
つていた。第２図はSi基板上に生成した
CVDSiO2膜のモニタリング干渉波形の例であり、
反射光量は膜厚により±70％変動している。 FIG. 1 is an example showing problems in processing using a conventional laser processing device. A laser beam 2 emitted from a laser oscillator 1 is guided to an objective lens 4 through an intermediate optical system 3 that performs beam movement, scanning, etc., and is focused and irradiated onto a workpiece 5 to perform processing.
However, when the workpiece 5 is a semiconductor IC or the like, there is Si 3 N 4 on the substrate and wiring for insulation and passivation.
One or several layers of dielectric thin film 6 such as or SiO 2 are applied, and the reflectance of the irradiated light fluctuates periodically due to the interference effect due to the thickness of these films. That is, the effective intensity of light incident on the processed portion changes, processing conditions change depending on the film thickness, and optimal processing is not performed. This lowers the processing yield, posing a major practical problem. Figure 2 shows the generated material on a Si substrate.
This is an example of the monitoring interference waveform of CVDSiO 2 film,
The amount of reflected light varies by ±70% depending on the film thickness.
本発明の目的は上述の従来技術の欠点をなく
し、被加工物の反射特性によつて加工の歩留まり
が左右されない高品質で高歩留まりな加工を可能
にするレーザ加工装置を提供するにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a laser processing apparatus which eliminates the above-mentioned drawbacks of the prior art and enables high-quality and high-yield processing in which the processing yield is not affected by the reflection characteristics of the workpiece.
即ち本発明は、加工に用いるレーザ光を加工が
起らないレベルに下げた状態で加工部に照射し、
その反射光量を入射光量と比較して反射率を算出
し、予め求めてある加工最適値に実効入射光量
（入射光量−反射光量）がなるようにレーザ出力
を自動補正してやる。 That is, the present invention irradiates the processed part with the laser light used for processing at a level lowered to a level that does not cause processing,
The amount of reflected light is compared with the amount of incident light to calculate the reflectance, and the laser output is automatically corrected so that the effective amount of incident light (amount of incident light - amount of reflected light) becomes a predetermined optimum processing value.
以下本発明を図に示す実施例にもとづいて具体
的に説明する。 The present invention will be specifically described below based on embodiments shown in the drawings.
第３図は本発明のレーザ加工装置の実施例の一
つである。レーザ発振器１１から出たレーザ光１
２は反射ミラー１３で反射され透過率粗調部１４
を通つて反射ミラー１５で反射され、透過率微調
部１６を通り、反射光モニタミラー１７を通過
し、落射ミラー１８で反射されて加工レンズ１９
に入り、集光されてテーブル２１上の被加工物２
０の表面に照射されて加工が行われる。 FIG. 3 shows one embodiment of the laser processing apparatus of the present invention. Laser light 1 emitted from laser oscillator 11
2 is reflected by the reflection mirror 13 and passes through the transmittance coarse adjustment section 14.
It passes through the reflection mirror 15, passes through the transmittance fine adjustment section 16, passes through the reflected light monitor mirror 17, is reflected by the reflection mirror 18, and is sent to the processing lens 19.
The light enters the workpiece 2 on the table 21 and is focused.
The surface of 0 is irradiated and processed.
この際先ず反射率測定に当つてレーザ光１２の
一部（約２％）は反射ミラー１３を通過し、出力
測定用パワーデイテクター２２に入り、この信号
はコントローラ２３に送られる。この信号から、
レーザ発振器１１のレーザ出力を知る。一方、反
射ミラー１３を反射した大部分のレーザ光は透過
率粗調部１４と透過率微調部１６により最適適加
工レベルの1/10以下で被加工物に影響の出ないレ
ベルに落し、被加工部に照射される。このときの
加工部からの反射光は加工レンズ１９、落射ミラ
ー１８を経て反射光モニターミラー１７（反射率
約５％）に入り、このミラーで反射された一部の
レーザ光が反射率測定用パワーデイテクター２４
に入る。そしてその信号はコントローラ２３に送
られ、被加工物２０に入射した光量と反射光量の
割合をコントローラ中で計算する。この計算の結
果、反射率を加味した最適加工出力を被加工物に
入射させるように透過率粗調部２４と透過率微調
部２６を自動的に調整する。例えば、最適加工パ
ワーが1μJで反射率が20％と測定されたら、各ミ
ラー、レンズ類の透過率を含めて考慮し、入射レ
ーザパワー1〓J 0.8＝1.25μJになるように透過率粗微調
部１４，１６を自動調整し、加工を行うようにす
る。こうすると、20％に当る0.25μJは反射され、
残りの1μJが実効的に加工部に入り最適加工が行
われる。 At this time, in measuring the reflectance, a part (about 2%) of the laser beam 12 first passes through the reflection mirror 13 and enters the power detector 22 for output measurement, and this signal is sent to the controller 23. From this signal,
Know the laser output of the laser oscillator 11. On the other hand, most of the laser light reflected by the reflection mirror 13 is reduced by the transmittance coarse adjustment section 14 and the transmittance fine adjustment section 16 to a level that is less than 1/10 of the optimal processing level and does not affect the workpiece. The processed part is irradiated. At this time, the reflected light from the processing section passes through the processing lens 19 and the reflection mirror 18 and enters the reflected light monitor mirror 17 (reflectance of about 5%), and a part of the laser light reflected by this mirror is used for reflectance measurement. power detector 24
to go into. The signal is then sent to the controller 23, and the ratio between the amount of light incident on the workpiece 20 and the amount of reflected light is calculated in the controller. As a result of this calculation, the coarse transmittance adjustment section 24 and the fine transmittance adjustment section 26 are automatically adjusted so that the optimum processing output that takes into account the reflectance is incident on the workpiece. For example, if the optimum processing power is 1 μJ and the reflectance is measured to be 20%, the transmittance should be coarsely and finely adjusted so that the incident laser power 1 〓 J 0.8 = 1.25 μJ, taking into account the transmittance of each mirror and lens. The parts 14 and 16 are automatically adjusted to perform processing. In this way, 20%, or 0.25 μJ, will be reflected,
The remaining 1 μJ effectively enters the machining section and performs optimal machining.
また、加工レンズ１９により得られた被加工物
２０の像は撮像部３０で受像され、像処理制御部
３１に送られ、デイスプレイ３２上に写し出され
る。像処理制御部３１ではこの他の像のコントラ
スト測定により加工レンズ１９の焦点の合い方を
測定し、最適焦点条件になるように、自動焦点機
構３３を駆動する。このような自動焦点機構を付
加することにより、反射率測定最適加工条件の再
現がより正確になり、しかも処理速度も大巾に向
上することができた。 Further, the image of the workpiece 20 obtained by the processing lens 19 is received by the imaging section 30, sent to the image processing control section 31, and displayed on the display 32. The image processing control section 31 measures the focusing of the processing lens 19 by measuring the contrast of this other image, and drives the automatic focusing mechanism 33 so that the optimum focusing condition is achieved. By adding such an automatic focusing mechanism, it was possible to more accurately reproduce the optimum processing conditions for reflectance measurement, and the processing speed was also greatly improved.
このようにすることにより、加工部への実効的
なレーザ入力は、最適パワーに精度よくコントロ
ールすることができるようになつた。 By doing this, the effective laser input to the processing section can be precisely controlled to the optimum power.
第４図は本発明の他の実施例である。レーザ発
振器１から出たレーザ光１２は反射ミラー１３で
反射され、透過率粗調部１４を通つて反射ミラー
１５で反射され、透過率微調部１６を通り、反射
光モニターミラー１７を通過し、落射ミラー１８
で反射されて加工レンズ１９に入り、集光されて
テーブル２１の上の被加工物２０の表面に照射さ
れて加工が行われる。 FIG. 4 shows another embodiment of the invention. Laser light 12 emitted from laser oscillator 1 is reflected by reflection mirror 13, passes through transmittance coarse adjustment section 14, is reflected by reflection mirror 15, passes through transmittance fine adjustment section 16, passes through reflected light monitor mirror 17, Reflection mirror 18
The light is reflected by the beam, enters the processing lens 19, is condensed, and is irradiated onto the surface of the workpiece 20 on the table 21 to be processed.
この加工の前に反射率測定と最適パワーへの設
定を行なうが、先ず、レーザ光１２の一部（約２
％）は反射ミラー１３を通過し、出力測定用パワ
ーデイテクター２２に入り、この信号はコントロ
ーラ２３に送られる。この信号からレーザ発振器
１１ののレーザ出力を知る。一方、反射ミラー１
３を反射した大部分のレーザ光は透過率微調部１
４と透過率微調部１６により、最適加工レベルの
１／１０以下で被加工物に影響を与えない十分低いパ
ワーレベルに落し、被加工物２０に照射される。
このときの照射パワーレベルは反射率約５％の反
射光モニタミラー１７からの反射光を加工パワー
測定用パワーデイテクター２５に入れ、その信号
はコントローラ２３に送られて、被加工物１０に
ダメージを与えない反射率測定に適切なパワーレ
ベルに落されているか確認する。この測定の間
は、レーザ光が加工部に入らないようにシヤツタ
ー２６は光路中に入り、レーザ光を遮断する。こ
の確認が終ると、シヤツター２６を光路外に出
し、このパワーレベルで被加工物２０を照射す
る。その反射光は加工レンズ１９、落射ミラー１
８を経て反射光モニタミラー１７で約５％が反射
されて反射率測定用パワーデイテクタ−２４に入
る。そしてその信号はコントローラ２３に送られ
被加工物２０に入射した光量と反射光量から反射
率が計算される。 Before this processing, the reflectance is measured and the optimum power is set. First, a portion of the laser beam 12 (approximately 2
%) passes through the reflection mirror 13 and enters the power detector 22 for output measurement, and this signal is sent to the controller 23. The laser output of the laser oscillator 11 is known from this signal. On the other hand, reflective mirror 1
Most of the laser light reflected from the transmittance fine adjustment section 1
4 and the transmittance fine adjustment section 16, the power level is reduced to a sufficiently low power level that is 1/10 or less of the optimum processing level and does not affect the workpiece, and the workpiece 20 is irradiated.
At this time, the irradiation power level is approximately 5%, and the reflected light from the reflected light monitor mirror 17 is input into the power detector 25 for measuring machining power, and the signal is sent to the controller 23 to damage the workpiece 10. Ensure that the power level is set to the appropriate level for reflectance measurements that do not give During this measurement, the shutter 26 enters the optical path and blocks the laser beam so that the laser beam does not enter the processing area. After this confirmation, the shutter 26 is moved out of the optical path and the workpiece 20 is irradiated at this power level. The reflected light passes through the processed lens 19 and the reflected mirror 1.
8, about 5% of the reflected light is reflected by the reflected light monitor mirror 17 and enters the power detector 24 for measuring reflectance. The signal is then sent to the controller 23, and the reflectance is calculated from the amount of light incident on the workpiece 20 and the amount of reflected light.
次に再びシヤツター２６を光路中に入れてレー
ザ光を遮断した状態にし、得られた反射率と最適
加工入力とレーザ発振器出力とから、透過率粗調
部１４と透過率粗調部１６の設定透過率を決めそ
の値に調整する。そして実際にレーザパワーを出
してみて設定されたレーザパワーになつているか
どうかを加工パワー測定用パワーデイテクタ−２
５によつて確認する。微小な差がある場合、この
デイテクタ−２５からの信号を受けたコントロー
ル２３によつて透過率微調部１６を微調整し、反
射率を加味した最適レーザパワーに正確に設定す
る。 Next, put the shutter 26 into the optical path again to block the laser beam, and set the coarse transmittance adjustment section 14 and the rough transmittance adjustment section 16 based on the obtained reflectance, optimal processing input, and laser oscillator output. Determine the transmittance and adjust it to that value. Then, try outputting the laser power and check whether it matches the set laser power using the power detector 2 for measuring the machining power.
Confirm by 5. If there is a slight difference, the transmittance fine adjustment unit 16 is finely adjusted by the control 23 receiving the signal from the detector 25 to accurately set the optimum laser power in consideration of the reflectance.
最後にシヤツター２６を外へ出し、レーザを照
射して最適加工条件で被加工物１０を加工する。 Finally, the shutter 26 is taken out and the laser is irradiated to process the workpiece 10 under optimal processing conditions.
このようにすることにより、加工部への実効的
なレーザ入力は最適値に設定でき、設定値の確認
再調整も可能なため、被加工物の表面反射率のバ
ラツキにかかわらず加工の再現性を保つことがで
きるようになり生産の歩留まりが著しく向上し
た。 By doing this, the effective laser input to the processing part can be set to the optimum value, and the set value can be checked and readjusted, so the processing can be reproducible regardless of variations in the surface reflectance of the workpiece. As a result, production yields have significantly improved.
また、加工レンズ１９により得られた像は前実
施例同様撮像部３０、像処理制御部３１で処理さ
れ自動焦点機構３３により、高精度に焦点合せす
るようにすることにより、反射率測定、最適加工
条件の再現がより正確になり、処理速度も向上
し、歩留さり、生産量の向上に大きな効果を示し
た。 In addition, the image obtained by the processing lens 19 is processed by the imaging unit 30 and the image processing control unit 31 as in the previous embodiment, and is focused with high precision by the automatic focusing mechanism 33. Processing conditions can now be reproduced more accurately, processing speed has improved, and this has had a significant effect on improving yield and production volume.
以上説明したように本発明によれば、従来は被
加工物の表面反射率のバラツキによりバラツイて
いた加工結果が、自動補正によつて正確な加工条
件で加工できるようになつたため、ほとんどバラ
ツキがなくなり、加工歩留まりが大巾に向上し、
従つてコスト低減し、被加工物の信頼性も向上
し、工業上の大きな効果が得られた。また生産の
スピードも向上した。 As explained above, according to the present invention, the machining results, which conventionally varied due to variations in the surface reflectance of the workpiece, can now be machined under accurate machining conditions through automatic correction, so there is almost no variation. This greatly improves processing yield,
Therefore, the cost was reduced, the reliability of the workpiece was improved, and great industrial effects were obtained. The speed of production has also improved.
第１図は従来のレーザ加工装置の例で、第２図
は被加工物表面の成膜状態による反射光量の変動
の様子を示す図である。第３図及び第４図は本発
明のレーザ加工装置の実施例を示す。
１１…レーザ発振器、１４…透過率粗調部、１
６…透過率微調部、１７…反射光モニタミラー、
１８…落射ミラー、１９…加工レンズ、２０…被
加工物、２２…出力測定用パワーデイテクター、
２３…コントローラ、２４…反射率測定用パワー
デイテクター。
FIG. 1 shows an example of a conventional laser processing apparatus, and FIG. 2 is a diagram showing how the amount of reflected light changes depending on the state of film formation on the surface of the workpiece. 3 and 4 show an embodiment of the laser processing apparatus of the present invention. 11... Laser oscillator, 14... Transmittance rough adjustment section, 1
6...Transmittance fine adjustment section, 17...Reflected light monitor mirror,
18... Reflection mirror, 19... Processing lens, 20... Workpiece, 22... Power detector for output measurement,
23...Controller, 24...Power detector for reflectance measurement.
Claims (1)
力測定のための第１の検出手段と加工部からの反
射光の光量測定のための第２の検出手段とこれら
第１の検出手段及び第２の検出手段からの情報に
もとずいて、最適加工条件を実現するためのレー
ザ光の透過光量を決定する制御手段と、該制御手
段の決定にもとずいて透過光量を設定する透過率
調整機構とを備え付けたことを特徴とするレーザ
加工装置。 ２ レーザ加工装置において、レーザ発振器の出
力測定のための第１の検出手段と、加工部からの
反射光の光量測定のための第２の検出手段と、こ
れら第１の検出手段及び第２の検出手段からの情
報にもとずいて加工面の反射率を算出し、最適加
工条件を実現するためのレーザ光の透過光量を決
定する制御手段と、該制御手段の決定にもとずい
て透過光量を設定する透過率調整機構と、透過率
調整機構を通過後のレーザパワーを測定するため
の第３の検出手段と、上記透過率調整機構を通過
後のレーザパワー測定を阻害せず、しかも加工部
にレーザパワーが入射することを防ぐように設け
られたレーザ光遮断用シヤツターとを備え付けた
ことを特徴とするレーザ加工装置。 ３ 加工用対物レンズの焦点合せを、このレンズ
で得られた像のコントラストの電気的測定処理に
よる情報にもとずいて自動的に行うようにしたこ
とを特徴とする特許請求の範囲第２記載のレーザ
加工装置。[Claims] 1. In a laser processing apparatus, a first detection means for measuring the output of a laser oscillator, a second detection means for measuring the amount of light reflected from a processing part, and these first detection means and a control means for determining the amount of transmitted light of the laser beam to realize optimal processing conditions based on information from the second detection means, and setting the amount of transmitted light based on the determination by the control means. A laser processing device characterized by being equipped with a transmittance adjustment mechanism. 2. In a laser processing device, a first detection means for measuring the output of the laser oscillator, a second detection means for measuring the amount of light reflected from the processing part, and a first detection means and a second detection means for measuring the amount of light reflected from the processing part A control means that calculates the reflectance of the machined surface based on information from the detection means and determines the amount of transmitted laser light to achieve optimal processing conditions; a transmittance adjustment mechanism for setting the amount of light; a third detection means for measuring the laser power after passing through the transmittance adjustment mechanism; and a third detection means for measuring the laser power after passing through the transmittance adjustment mechanism, and A laser processing device characterized by being equipped with a laser light blocking shutter provided to prevent laser power from entering a processing section. 3. The second aspect of the claim, characterized in that the processing objective lens is automatically focused based on information obtained by electrical measurement processing of the contrast of an image obtained with this lens. laser processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57125628A JPS5916691A (en) | 1982-07-21 | 1982-07-21 | Laser processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57125628A JPS5916691A (en) | 1982-07-21 | 1982-07-21 | Laser processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5916691A JPS5916691A (en) | 1984-01-27 |
| JPH0362513B2 true JPH0362513B2 (en) | 1991-09-26 |
Family
ID=14914755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57125628A Granted JPS5916691A (en) | 1982-07-21 | 1982-07-21 | Laser processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5916691A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6257787A (en) * | 1985-07-05 | 1987-03-13 | フラウンホッファー―ゲゼルシャフト ツァフェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ． | Laser beam machining device |
| JP2804027B2 (en) * | 1987-07-13 | 1998-09-24 | ファナック 株式会社 | Laser output correction method |
| JPH0616952B2 (en) * | 1988-08-05 | 1994-03-09 | 日本電気株式会社 | Laser light energy management method |
| JP2599439B2 (en) * | 1988-08-25 | 1997-04-09 | 松下電器産業株式会社 | Laser trimming device and trimming method |
| JPH05261577A (en) * | 1992-03-18 | 1993-10-12 | Sumitomo Heavy Ind Ltd | Laser beam machine |
| US5427733A (en) * | 1993-10-20 | 1995-06-27 | United Technologies Corporation | Method for performing temperature-controlled laser sintering |
| US5529951A (en) * | 1993-11-02 | 1996-06-25 | Sony Corporation | Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation |
| JP6998149B2 (en) * | 2017-08-08 | 2022-01-18 | 株式会社ディスコ | Laser processing method |
-
1982
- 1982-07-21 JP JP57125628A patent/JPS5916691A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5916691A (en) | 1984-01-27 |
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