JPH0362831A - Surface-processing of polymer molded article with laser - Google Patents

Surface-processing of polymer molded article with laser

Info

Publication number
JPH0362831A
JPH0362831A JP1199642A JP19964289A JPH0362831A JP H0362831 A JPH0362831 A JP H0362831A JP 1199642 A JP1199642 A JP 1199642A JP 19964289 A JP19964289 A JP 19964289A JP H0362831 A JPH0362831 A JP H0362831A
Authority
JP
Japan
Prior art keywords
laser
molded article
processing
irradiated
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1199642A
Other languages
Japanese (ja)
Other versions
JPH0811772B2 (en
Inventor
Hiroyuki Niino
弘之 新納
Akira Yabe
明 矢部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP1199642A priority Critical patent/JPH0811772B2/en
Publication of JPH0362831A publication Critical patent/JPH0362831A/en
Publication of JPH0811772B2 publication Critical patent/JPH0811772B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0827Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0838Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using laser

Landscapes

  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To form a number of small protrusions and recesses on the surface of a molded article while preventing the staining of the surface with deposited fine powder generating in laser-processing stage by applying a liquid on the surface of a polymer molded article to be irradiated with ultraviolet laser beam and radiating the laser beam to the liquid-coated surface. CONSTITUTION:A surface of a molded article having a processing surface made of a polymer (preferably aromatic polyphenylene sulfide, etc.) is covered with a liquid such as water or hexane e.g. by immersing the article in the liquid. The objective surface-processing is performed by irradiating the wet surface with a high-intensity ultraviolet laser beam having a wavelength of <=400nm and a fluence of >=0.1J/cm<2>/pulse or thereabout [preferably XeF excimer laser (351nm)].

Description

【発明の詳細な説明】 (技術分野) 本発明は、紫外レーザーを用いる高分子成形物の表面加
工方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a method of surface processing a polymer molded article using an ultraviolet laser.

(従来技術及びその問題点) S、ラザレらは(S、Lazare、R,5rjniv
asan、J、Phys。
(Prior art and its problems) S. Lazare et al.
asan, J., Phys.

Chem、、Vol、90.2124(1986))、
高分子フィルムの表面を、エキシマ−レーザーなどの高
強度紫外レーザーで照射すると、その照射部位は照射直
後に容易に改質され、現像工程等の後処理を行なうこと
なく、直接的に形態学的な凹凸が形成されることを報告
している。このように、紫外レーザーを用いた高分子表
面の加工法は、精度良く、高速で行なうことができ、ま
た、レーザーの照射条件を制御することで、照射高分子
表面の構造特性や機能性を向上させることができるとい
う特徴があり、多彩な表面反応を制御良く行うことが可
能な手法である。しかしながら、高分子の化学構造の中
に芳香環を有する場合では、一般に加工時に微粉末を発
生しやすく、特に、長波長のレーザーを用いた場合に顕
著となる。大気中で加工を行なった時、この微粉末の一
部は、樹脂表面に戻り非照射部分に堆積し、さらに、真
空中では、窓や真空容器の内壁に付着し、加工効率が低
下するという欠点がある。この欠点を解消するために、
G、コーレンらは(G、Koren and J、J、
Donelon、Appl、Phys、、Voi。
Chem, Vol. 90.2124 (1986)),
When the surface of a polymer film is irradiated with a high-intensity ultraviolet laser such as an excimer laser, the irradiated area is easily modified immediately after irradiation, and the morphological properties are directly It has been reported that unevenness is formed. In this way, polymer surface processing methods using ultraviolet lasers can be performed with high precision and high speed, and by controlling the laser irradiation conditions, it is possible to improve the structural characteristics and functionality of the irradiated polymer surface. It is a method that allows a variety of surface reactions to be carried out in a well-controlled manner. However, when a polymer has an aromatic ring in its chemical structure, fine powder is generally likely to be generated during processing, especially when a long wavelength laser is used. When processing is performed in the atmosphere, some of this fine powder returns to the resin surface and accumulates on non-irradiated areas, and in a vacuum, it adheres to windows and the inner walls of the vacuum container, reducing processing efficiency. There are drawbacks. In order to eliminate this drawback,
G, Koren and J,
Donelon, Appl, Phys, Voi.

B45,45(+988))、ポリイミドに対し、Xe
Clエキシマレーザ−を照射後、炭酸ガスレーザーを照
射する、二段照射法によって発生した微粉末を除去して
いる。また、R,J、フォンガッ1−フェル1〜らは(
R。
B45,45(+988)), polyimide, Xe
The fine powder generated is removed by a two-stage irradiation method in which irradiation is performed with a Cl excimer laser and then a carbon dioxide laser is irradiated. In addition, R, J, Fonggat1-Fel1~ et al.
R.

J、vonGutfeld and R,5rinjv
asan、ApplPhys、、Vol。
J, von Gutfeld and R, 5rinjv.
asan, ApplPhys,, Vol.

5] 、15(1987))、レーザー照射部の周囲に
電極を設け、微粉末を収集している。しかし、これらの
方法は、工程が複雑になるという欠点がある。
5], 15 (1987)), an electrode is provided around the laser irradiation part to collect the fine powder. However, these methods have the disadvantage that the steps are complicated.

(発明の課題) 本発明は、紫外レーザーを用いて高分子成形物の表面加
工を行う場合に発生する微粉末に起因する不都合な問題
を解決することをその課題とする。
(Problem of the Invention) An object of the present invention is to solve the inconvenient problem caused by fine powder generated when performing surface processing of a polymer molded article using an ultraviolet laser.

(課題を解決するための手段) 本発明者らは、前記課題を解決すべく鋭意研究を重ねた
結果、本発明を完成するに至った。
(Means for Solving the Problems) The present inventors have conducted extensive research to solve the above problems, and as a result, have completed the present invention.

すなわち、本発明によれば、紫外レーザーをa′6分子
成形物に照射する表面加工法において、該高分子成形物
の少なくとも照射表面部の液体を存在させることを特徴
とする高分子成形物の表面加工方法が提供される。
That is, according to the present invention, in a surface processing method of irradiating an a'6 molecule molded product with an ultraviolet laser, a liquid is present at least on the irradiated surface of the polymer molded product. A surface processing method is provided.

S、ラザレらは上記の報文において、この紫外レーザー
による高分子表面のエツチングは、その表面状態を観察
するのに迅速で簡便な方法であると一 している。しかし、彼らは、そのエツチングについて気
相雰囲気又は真空下での検討しか行なっておらず、本発
明における如き照射面に液体を存在させる湿式照射につ
いては全く検討されていない。
In the above-mentioned paper, S. and Lazare et al. agree that etching the surface of a polymer with an ultraviolet laser is a quick and simple method for observing the surface condition. However, they have only studied etching in a gas phase atmosphere or under vacuum, and have not studied wet irradiation in which a liquid is present on the irradiated surface as in the present invention.

本発明の方法は、紫外レーザーを高分子成形物の表面に
照射するに際し、高分子成形物の少なくとも紫外レーザ
ー照射部に、液体を存在させる。
In the method of the present invention, when the surface of the polymer molded article is irradiated with an ultraviolet laser, a liquid is made to exist at least in the ultraviolet laser irradiated part of the polymer molded article.

液体としては、照射レーザー波長での吸光係数が微小な
、かつ、高分子を溶かさないものが好ましく、例えば、
水の他、ヘキサン、アルコール、フロン等の有機溶媒が
好適である。高分子成形物の表面部に液体を存在させる
方法としては、成形物を液体中に浸漬する方法、成形物
の表面に液体を噴射したり、流通させる方法等がある。
The liquid is preferably one that has a minute extinction coefficient at the wavelength of the irradiated laser and does not dissolve polymers; for example,
In addition to water, organic solvents such as hexane, alcohol, and chlorofluorocarbons are suitable. Methods for causing liquid to be present on the surface of a polymer molded article include a method of immersing the molded article in a liquid, a method of spraying or flowing a liquid onto the surface of the molded article, and the like.

本発明は、高分子成形物の改質したい表面部位に相当す
るマスク(金属板製パターンなど)を通過させたレーザ
ービームを照射することで、希望する照射部分のみに加
工を施すことができる。この場合、エキシマレーザ−の
ビームは、ヘリウムネオンレーザ−、アルゴン及びクリ
プトンイオンレーザ−1Nd+:YAGレーザー等の他
のレーザーのビームと比較して、ビーム形状が太きいた
めに、このビームを走査させて改質すべき部位を照射す
ることで、大面積化にも容易に対応できる。特に、本発
明は、紫外レーザーによる非熱的な光化学分解反応を用
いる加工法であるため、照射部位以外の周辺には熱的損
傷を何ら生しない。しかも、レーザーにより切削された
断片は、周囲には何ら付着しない。また、成形物の表面
に形成する模様の形状、大きさ、及び除去されるフィル
ムの量(すなわち切削される深さ)は、照射するレーザ
ーの波長、フルエンス、パルス数により制御できる。
In the present invention, by irradiating a laser beam that has passed through a mask (such as a pattern made of a metal plate) corresponding to the surface area of a polymer molded article that is desired to be modified, it is possible to process only the desired irradiated area. In this case, the excimer laser beam has a thicker beam shape than other laser beams such as helium neon laser, argon and krypton ion laser, and 1Nd+:YAG laser, so this beam is scanned. By irradiating the area to be modified, it is possible to easily accommodate larger areas. In particular, since the present invention is a processing method that uses a non-thermal photochemical decomposition reaction using an ultraviolet laser, no thermal damage is caused in the vicinity other than the irradiated area. Moreover, the fragments cut by the laser do not adhere to the surrounding area. Further, the shape and size of the pattern formed on the surface of the molded article, and the amount of film removed (ie, the depth to be cut) can be controlled by the wavelength, fluence, and number of pulses of the irradiated laser.

こうして、レーザー照射部分の成形物表面」―に、物理
的、化学的に安定な加工を行なうことができる。
In this way, it is possible to perform physically and chemically stable processing on the surface of the molded product in the laser irradiated area.

本発明におけるレーザーとしては、波長400nm以下
の紫外レーザーが適しており、特に好適には、XeF(
35]nm)、XeC]、 (308nm)、KrF 
(248nm)、ArF(193nm)あるいはF2(
157nm)エキシマレーザ−である。
As the laser in the present invention, an ultraviolet laser with a wavelength of 400 nm or less is suitable, and XeF (
35]nm), XeC], (308nm), KrF
(248nm), ArF (193nm) or F2(
157 nm) excimer laser.

また、Nd”:YAG、色素レーザー、Krイオンレー
ザ、Arイオンレーザ−あるいは銅蒸気レーザーの基本
発振波長光を非線形光学素子などにより、紫外光領域の
レーザーに変換したものも有効である。
Also effective are Nd":YAG, dye lasers, Kr ion lasers, Ar ion lasers, or copper vapor lasers in which the fundamental oscillation wavelength light is converted to a laser in the ultraviolet region using a nonlinear optical element or the like.

レーザーのフルエンスとしては、素材により具なるが、
約0.1mJ/ci/パルス以上の高輝度レーザーが望
ましい。
The fluence of the laser depends on the material, but
A high-intensity laser of approximately 0.1 mJ/ci/pulse or higher is desirable.

本発明において被加工物として用いる高分子成形物は、
各種の形状及び構造を有することができ、少なくともそ
の加工表面部が高分子から構成されたものであればよい
。この場合、高分子としては、各種のものが用いられ、
その種類は特に制約されず、また結晶性、非結晶性のい
ずれのものでもよい。高分子としては、例えば、ポリエ
チレン、ポリプロピレン、エチレン/プロピレン共重合
体等のポリオレフィン系樹脂、ポリスチレン系樹脂、ポ
リ塩化ビニル、ポリエステル、ポリアミド、ポリカーボ
ネト、ポリアセタール樹脂、エポキシ樹脂、フェノール
樹脂等の各種の可塑性又は熱硬化性のものであることが
できるし、また、光硬化性のものであってもよい。本発
明は、特に芳香族系屓請子、例えば、芳香族ポリフェニ
レンサルファイド、芳香族ポリエーテルエーテルケ1〜
ン、芳香族ポリエーテルイミド、芳香族ポリエーテルス
ルホン、芳香族ポリイミド、芳香族ポリエステル、芳香
族エポキシ樹脂等の縮合物又は共縮重合物あるいはそれ
らの混合物を好ましいものとして挙げることができる。
The polymer molded product used as the workpiece in the present invention is
It can have various shapes and structures as long as at least its processed surface portion is made of polymer. In this case, various polymers are used,
The type thereof is not particularly limited, and it may be either crystalline or non-crystalline. Examples of polymers include polyolefin resins such as polyethylene, polypropylene, and ethylene/propylene copolymers, polystyrene resins, polyvinyl chloride, polyesters, polyamides, polycarbonates, polyacetal resins, epoxy resins, and phenolic resins. It can be plastic or thermosetting, or it can be photocurable. The present invention particularly relates to aromatic base materials, such as aromatic polyphenylene sulfide, aromatic polyether ether compounds, etc.
Preferable examples include condensates or cocondensates of aromatic polyesters, aromatic polyetherimides, aromatic polyethersulfones, aromatic polyimides, aromatic polyesters, aromatic epoxy resins, and mixtures thereof.

本発明の高分子成形物としては、フィル11、シート、
棒体、繊維の他、各種構造物が挙げられる。
The polymer molded products of the present invention include fill 11, sheet,
Examples include rods, fibers, and various other structures.

また、高分子成形物は、ガラス繊維や炭素繊維等の各種
繊維や、充填剤で強化された樹脂成形物であることがで
き、また、高分子と他の素材との複合体であることがで
きる。
In addition, the polymer molded product can be a resin molded product reinforced with various fibers such as glass fiber or carbon fiber, or a filler, or it can be a composite of a polymer and other materials. can.

(発明の効果) 本発明によりる紫外レーザーを用いる高分子成形物の加
工法によれば、表面部からの高分子の削除による微細凹
部を成形物表面に形成することができる。この加工法に
よれば、表面に多数の微細凹凸を形成されることができ
、このような表面は化学的に活性な改質表面として作用
する。本発明の方法では、その成形物の照射面に液体を
存在させたことから、紫外レーザー加工に際して発生す
る微粉末は液体に抽捉され、成形物表面や加工装置表面
に付着するのが防止される。
(Effects of the Invention) According to the method of processing a polymer molded article using an ultraviolet laser according to the present invention, fine recesses can be formed on the surface of the molded article by removing the polymer from the surface portion. According to this processing method, a large number of fine irregularities can be formed on the surface, and such a surface acts as a chemically active modified surface. In the method of the present invention, since the liquid is present on the irradiated surface of the molded product, the fine powder generated during ultraviolet laser processing is extracted by the liquid and is prevented from adhering to the surface of the molded product or processing equipment. Ru.

(実施例) 以下、本発明を実施例により、さらに詳細に説明する。(Example) Hereinafter, the present invention will be explained in more detail with reference to Examples.

実施例1 純水中において、ポリエチレンナフタレートフィルムの
平滑な面に、X e Clエキシマーシーザーをエネル
ギー密度1 J / a#て30シヨツト照射させた。
Example 1 In pure water, the smooth surface of a polyethylene naphthalate film was irradiated with 30 shots of X e Cl excimer Caesar at an energy density of 1 J/a#.

良好なエツチング特性が得られ、照射部の周囲には微粉
残渣等の不純物は完全に除去されていた。さらに、延伸
フィルムを用いた場合には。
Good etching characteristics were obtained, and impurities such as fine powder residues around the irradiated area were completely removed. Furthermore, when a stretched film is used.

照射面に形態学的な凹凸が生成していた。Morphological irregularities were generated on the irradiated surface.

実施例2 ヘキサン中において、ポリエチレンナフタレートフィル
ムの平滑な面に、XeClエキシマ−レーザーをエネル
ギー密度1,17−で30シヨツト照射させた。良好な
エツチング特性が得られ、照射部の周囲には微粉末残渣
等の不純物は完全に除去されていた。さらに、延伸フィ
ルムを用いた場合には、照射面に形態学的な凹凸が生成
していた。
Example 2 In hexane, the smooth surface of a polyethylene naphthalate film was irradiated with a XeCl excimer laser for 30 shots at an energy density of 1,17-. Good etching characteristics were obtained, and impurities such as fine powder residues around the irradiated area were completely removed. Furthermore, when a stretched film was used, morphological irregularities were generated on the irradiated surface.

実施例3 純水中において、芳香族ポリエーテルスルホンフィルム
の平滑な面に、 XeClエキシマ−レーザーをエネル
ギー密度IJ/cdで30シヨツト照射させた。
Example 3 In pure water, the smooth surface of an aromatic polyethersulfone film was irradiated with a XeCl excimer laser for 30 shots at an energy density of IJ/cd.

良好なエツチング特性が得られ、照射部の周囲には微粉
末残渣等の不純物は完全に除去された。また、照射面に
形態学的な凹凸が生成していた。
Good etching characteristics were obtained, and impurities such as fine powder residue around the irradiated area were completely removed. Additionally, morphological irregularities were generated on the irradiated surface.

実施例4 ヘキサン中において、芳香族ポリエーテルスルホンフィ
ルムの平滑な面に、XeClエキシマ−レーザーをエネ
ルギー密度IJ/rn?で30シヨっト照射させた。良
好なエツチング特性が得られ、照射部の周囲には微粉末
残渣等の不純物は完全に除去された。また、照射面に形
態学的な凹凸が生成していた。
Example 4 A XeCl excimer laser was applied to the smooth surface of an aromatic polyether sulfone film in hexane at an energy density of IJ/rn? I fired 30 shots. Good etching characteristics were obtained, and impurities such as fine powder residue around the irradiated area were completely removed. Additionally, morphological irregularities were generated on the irradiated surface.

Claims (1)

【特許請求の範囲】[Claims] (1)紫外レーザーを高分子成形物に照射する表面加工
法において、該高分子成形物の少なくとも照射表面部の
液体を存在させることを特徴とする高分子成形物の表面
加工方法。(2)該高分子成形物を液体中に浸漬し、こ
れに紫外レーザーを照射する請求項1の方法。
(1) A surface processing method for a polymer molded article in which a polymer molded article is irradiated with an ultraviolet laser, characterized in that a liquid is present at least on the irradiated surface of the polymer molded article. (2) The method according to claim 1, wherein the polymer molded article is immersed in a liquid and irradiated with an ultraviolet laser.
JP1199642A 1989-08-01 1989-08-01 Surface processing method of polymer moldings using laser Expired - Lifetime JPH0811772B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1199642A JPH0811772B2 (en) 1989-08-01 1989-08-01 Surface processing method of polymer moldings using laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1199642A JPH0811772B2 (en) 1989-08-01 1989-08-01 Surface processing method of polymer moldings using laser

Publications (2)

Publication Number Publication Date
JPH0362831A true JPH0362831A (en) 1991-03-18
JPH0811772B2 JPH0811772B2 (en) 1996-02-07

Family

ID=16411246

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Cited By (7)

* Cited by examiner, † Cited by third party
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JPH06228343A (en) * 1993-02-08 1994-08-16 Hamamatsu Photonics Kk Method and device for surface modification of fluororesin
WO1996022323A1 (en) * 1995-01-18 1996-07-25 Kurashiki Boseki Kabushiki Kaisha Tubular film having treated internal surface and apparatus and method for treating the internal surface
EP0644227A4 (en) * 1993-03-23 1997-12-29 Univ Tokai Solid surface modifying method and apparatus.
JP2003332215A (en) * 2002-05-14 2003-11-21 Toshiba Corp Processing method, semiconductor device manufacturing method, and processing apparatus
US7288466B2 (en) 2002-05-14 2007-10-30 Kabushiki Kaisha Toshiba Processing method, manufacturing method of semiconductor device, and processing apparatus
US8017795B2 (en) 2005-04-21 2011-09-13 Ndsu Research Foundation Radiation curable polymer films having improved laser ablation properties and radiation curable sensitizers therefor
CN110871566A (en) * 2018-08-31 2020-03-10 空中客车防卫和太空有限责任公司 Method for the surface nanostructuring of carbon fibers in fiber composite plastics based on sulfur and aromatic hydrocarbons

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046893A (en) * 1983-08-25 1985-03-13 Seiko Epson Corp Laser working device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046893A (en) * 1983-08-25 1985-03-13 Seiko Epson Corp Laser working device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06228343A (en) * 1993-02-08 1994-08-16 Hamamatsu Photonics Kk Method and device for surface modification of fluororesin
EP0644227A4 (en) * 1993-03-23 1997-12-29 Univ Tokai Solid surface modifying method and apparatus.
WO1996022323A1 (en) * 1995-01-18 1996-07-25 Kurashiki Boseki Kabushiki Kaisha Tubular film having treated internal surface and apparatus and method for treating the internal surface
US5665444A (en) * 1995-01-18 1997-09-09 Kurashiki Boseki Kabushiki Kaisha Tube-shaped film having its inner peripheral surface treated, method for treating inner peripheral surface of tube-shaped film and apparatus therefor
CN1100817C (en) * 1995-01-18 2003-02-05 仓敷纺绩株式会社 Tubular film with inner peripheral surface treated and apparatus and method for treating the same
JP2003332215A (en) * 2002-05-14 2003-11-21 Toshiba Corp Processing method, semiconductor device manufacturing method, and processing apparatus
US7288466B2 (en) 2002-05-14 2007-10-30 Kabushiki Kaisha Toshiba Processing method, manufacturing method of semiconductor device, and processing apparatus
US7727853B2 (en) 2002-05-14 2010-06-01 Kabushiki Kaisha Toshiba Processing method, manufacturing method of semiconductor device, and processing apparatus
US8017795B2 (en) 2005-04-21 2011-09-13 Ndsu Research Foundation Radiation curable polymer films having improved laser ablation properties and radiation curable sensitizers therefor
CN110871566A (en) * 2018-08-31 2020-03-10 空中客车防卫和太空有限责任公司 Method for the surface nanostructuring of carbon fibers in fiber composite plastics based on sulfur and aromatic hydrocarbons

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