JPH0362923A - Electrode structure for plasma cvd apparatus - Google Patents

Abstract

PURPOSE:To avoid peeling of fixed material during operation, to suppress the formation of dust particles, to make it possible to elongate the continuous operating time in an actual apparatus, to form an excellent thin film and to improve quality by providing a heat radiation member at a substrate holder and a gas dispersing plate, and enhancing radiation heat-transfer efficiency. CONSTITUTION:Infrared rays are emitted from a heat radiating member 14 which is provided at a gas dispersing plate 3 or a substrate heater 5, and a substrate 4 is directly heated. Thus, the substrate 4 is heated to process conditions. A substrate holder 2 is also heated with the heat radiating member 14 which is provided at the substrate holder 2. Therefore, temperature differences among a cathode side electrode, the substrate 4 and an anode side electrode become less. The structure is different from the structure of a conventional electrode, and fixed material is rigidly attached to the cathode side electrode, the anode side electrode and the substrate 4 when the electrodes are heated. The formation of dust particles due to peeling is suppressed. The frequent removals of the fixed material on the anode electrode or the cathode side electrode during operation are avoided, the uniform thin film can be formed and the quality is improved.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an electrode structure of a plasma CVD apparatus used for forming various thin films on a substrate in the manufacturing process of semiconductor devices, etc. CV D (Chem
This invention relates to an electrode structure for a parallel plate type shower-type plasma CVD apparatus that suppresses the generation of dust particles due to product peeling, thereby making it possible to prevent film surface defects and extend the continuous operation time of the apparatus. .

[Prior art]

Plasma CVD equipment has 1 unit for applying high frequency voltage.
A pair of electrodes is installed inside the vacuum vessel, and the dilute process gas introduced into the vessel is decomposed and decomposed by glow discharge between the electrodes.
By exciting it to a plasma state, gas molecules are selectively fixed and deposited on the surface of a substrate mounted on an electrode to form a thin film, and the selectivity of gas molecules and the degree of fixation depend on the substrate temperature. It is something that is controlled.

As a conventional electrode for a plasma CVD apparatus, there is, for example, a parallel plate type shower type electrode as shown in FIG. A plasma generating electrode consisting of a substrate holder 2 and a gas distribution plate 3 having a large number of pores 7 is provided in a vacuum container 1.
This constitutes a pair of parallel plate type electrodes. A substrate 4 on which a thin film is to be formed is mounted on a substrate holder 2, and the substrate 4 and the substrate holder 2 are heated to a process condition temperature by a substrate heater 5 located on the surface of the gas distribution plate 3 facing the substrate holder 2.

A bipolar electrode is formed, with the substrate holder 2 serving as an anode side electrode, and the gas distribution plate 3 and substrate heater 5 serving as cathode side electrodes.

6 is a gas introduction pipe having a gas introduction port 6a, 8 is a vacuum seal treated with high frequency insulation, 9 is an insulator, 10 is a high frequency shield, 11 is a heating sheath wire, and 12 is a high frequency power source.

[Problem to be solved by the invention]

In the conventional example, when the substrate 4 is heated by the substrate heater 5, the substrate holder 2 is heated by radiation heat transfer, and the substrate 4 is heated to the process condition temperature by the contact heat transfer. Since the substrate temperature, which influences the conditions, is not directly heated, it is not only difficult to control the temperature of the process conditions, but also because the substrate 4 becomes a cold wall, it is not possible to produce a good thin film, and due to the presence of the cold wall, it is not possible to generate a good thin film. Since the degree of adhesion of the gas molecules to the anode side where the temperature is low is low, these adhering substances tend to peel off during the CVD operation, and the dust particles caused by the separation are the main cause of surface defects in the thin film formed on the substrate 4. Therefore, when operating a plasma CVD apparatus, it is currently an unavoidable condition to frequently remove the stuck substances on the anode side, and this is a factor that greatly impedes the continuous operation of conventional plasma CVD apparatuses.

[Means to solve the problem]

In order to solve the above problems, the present invention minimizes the temperature difference between the γ node side, the cathode side, and the substrate by providing a heat radiation member on the substrate holder, gas distribution plate, substrate heater, etc. to increase the radiation heat transfer efficiency. It is possible to easily control the temperature of the process conditions, and also to firmly form adhered substances on the anode and cathode sides, to avoid peeling off of the adhered substances during operation, suppress the generation of dust particles, and to prevent the formation of dust particles in the actual equipment. The aim is to extend the continuous operation time, form a good thin film, and improve quality.

That is, the first electrode structure of the present invention includes a substrate holder 2 provided in a vacuum container 1 and having a substrate 4 mounted thereon, as shown in the first diagram.
The substrate holder 2 and the gas distribution plate 3 are each provided with a heat radiation member 14.

As shown in the second diagram, the second electrode structure of the present invention includes a substrate holder 2 provided in a vacuum container 1 and having a substrate 4 attached thereto, a substrate heater 5 disposed opposite to the substrate holder 2, and a substrate heater 5 provided on the back side of the substrate heater 5. The substrate holder 2 and the substrate heater 5 are each provided with a heat radiation member 14.

[For production]

1st. Since the second electrode structure has the above configuration, the heat radiation member 14 provided on the gas distribution plate 3 or the substrate heater 5 radiates infrared rays to directly heat the substrate 4. It will be heated to process conditions.

Further, the substrate holder 2 is also heated by the heat radiation member 14 provided on the substrate holder 2.

Therefore, the cathode side electrode, the substrate 4. The temperature difference between the anode side electrodes is reduced, and unlike the conventional electrode structure described above, during electrode heating, solid matter adheres firmly to the cathode side electrode, anode side electrode, and substrate 4, and the generation of dust particles due to peeling is suppressed. Therefore, it is possible to avoid frequent removal of stuck substances on the anode side electrode or cathode side electrode during operation, and it is possible to form a uniform thin film, thereby improving quality.

〔Example〕

The present invention will be explained in detail below with reference to the drawings.

FIG. 1 is a cross-sectional view showing the configuration of a plasma CVD apparatus to which a first embodiment of the electrode structure of the present invention is applied, in which 1 is a vacuum vessel, 2 is a vacuum vessel;
．． Reference numerals 3 denote a substrate holder and a gas distribution plate having a large number of pores 7, which are disposed opposite to each other in the vacuum container 1. A substrate 4 is attached to the substrate holder 2, a substrate heater 5 is attached to the back surface of the substrate holder 2, and a heater heating sheath wire 11 penetrates the vacuum container 1, is supported, and is grounded.

A heat radiation member 14 made of ceramic or the like is provided on each of the substrate holder 2 and the gas distribution plate 3 by thermal spraying, and the substrate holder 2 and the substrate heater 5 constitute an anode side electrode, and the gas distribution plate 3 constitutes a cathode side electrode. ing.

Reference numeral 6 denotes a gas introduction pipe of the gas distribution plate 3, which has a gas introduction port 6a. 10 is a high frequency shield provided on the back surface of the gas distribution plate 3 and around the gas introduction pipe 6; 8 is a high frequency shield l
A vacuum seal buried between O and the gas introduction pipe 6 and subjected to high frequency insulation treatment; 9 is a gas dispersion plate 3 and a high frequency shield 10;
An insulator 12 provided between the heater heating sheath wire 11 and the gas introduction pipe 6 is a high frequency power source.

FIG. 2 is a cross-sectional view showing the configuration of a plasma CVD apparatus to which a second embodiment is applied. 2 is the anode side electrode, gas distribution plate 3
The substrate heater 5 constitutes a cathode side electrode.

Above 1. In the configuration of the second embodiment, the heat radiation member 14 provided on the gas distribution plate 3 or the substrate heater 5 emits infrared rays to directly heat the substrate 4, and the substrate 4 is heated to the process conditions. It turns out.

Further, the substrate holder 2 is also heated by the heat radiation member 14 provided on the substrate holder 2.

Therefore, the cathode side electrode, the substrate 4. The temperature difference between the anode side electrodes is reduced, and unlike the conventional electrode structure described above, during electrode heating, solid matter adheres firmly to the cathode side electrode, anode side electrode, and substrate 4, and the generation of dust particles due to peeling is suppressed. Therefore, it is possible to avoid frequent removal of stuck substances on the anode side electrode or cathode side electrode during operation, and it is possible to form a uniform thin film ia, thereby improving quality.

FIG. 3 is a cross-sectional view showing the configuration of a plasma CVD apparatus to which a third embodiment is applied.
is slidably attached, and the shaft sealing part 32 and the vacuum vessel 1 are connected by a flexible joint 31.

In the third embodiment having such a configuration, the substrate holder 2
It is easy to rotate, move horizontally or vertically, etc.
Adjustment of the distance between the cathode side electrode and the anode side electrode and attachment and detachment of the substrate 4 are possible in a short time, and operability can be improved compared to the conventional electrode structure.

FIG. 4 is a sectional view showing the configuration of a plasma CVD apparatus to which the fourth embodiment is applied. This fourth embodiment has a substrate holder 2. A heating plate 41 is disposed in a direction perpendicular to the substrate heater 5 and the gas distribution plate 3, a shaft 41a of the heating plate 41 and a shaft 2a of the substrate holder 2 are connected, and a heat radiation member 14 is provided on the heating plate 41. Become.

When the cathode side electrode and anode side electrode are arranged upright,
There is a low-temperature part on the wall of the vacuum container above the electrode, and the falling of dust particles from there due to detachment of adhered substances causes film surface defects. A heating plate 41 like this is provided, and a heat radiation member 14 is also provided on this.
Since this is provided, a hot wall is formed on the wall of the vacuum container above the electrode, which prevents dust particles from directly falling from the wall of the container and further strengthens the effect of film surface defect generation.

FIG. 5 is a sectional view showing the configuration of a plasma CVD apparatus to which the fifth embodiment is applied. In this fifth embodiment, two sets, one set of a substrate heater 5 and a gas dispersion plate 3, are installed in a vacuum chamber 1, facing each other. A heat radiation member 14 is provided on both sides of the two sets of gas distribution plates 3.3 or substrate heaters 5, 5 and the substrate holder 2, respectively.

In this fifth embodiment, since the substrate holder 2 is directly heated by infrared rays from the cathode side electrodes on both sides, the heating efficiency can be greatly improved compared to the case of heating on one side, and the number of substrates mounted can be greatly improved. can be doubled, so
Significant improvements in device efficiency are possible.

FIG. 6 is a sectional view showing the configuration of a plasma CVD apparatus to which the sixth embodiment is applied. This sixth embodiment differs from the fifth embodiment in that the substrate holder 2 is provided with a holder transfer mechanism 61.

According to the sixth embodiment, in addition to achieving the same effects as the fifth embodiment, the anode side electrode is provided in a common single plate type substrate holder (both sides mounted) 2, and a holder transfer mechanism 61 (
(including a grounding function), the substrate holder 2 can be easily moved in and out, and the operation axis for attaching and detaching the substrate can be improved.

Experiments have shown that the present invention has an effect of suppressing the generation of dust particles due to the peeling off of adhered substances from the peripheral portion of the substrate, the cathode side, or the anode side electrode surface during operation of the plasma CVD apparatus. It is possible to extend the continuous operation time of the actual device, and in the second embodiment shown in Fig. 2, the anode side (ground side) electrode is extremely simplified, so it is possible to improve the operability of the device. This greatly improves the throughput of the device.

〔Effect of the invention〕

As is clear from the above description, according to the present invention, the heat radiation member 1 provided on the gas distribution plate 3 or the substrate heater 5
4 can emit infrared rays to directly heat the substrate 4 to the process conditions, and since the substrate holder 2 is also heated by the heat radiation member 14 provided on the substrate holder 2, the cathode side electrode, anode It is possible to reduce the temperature difference between the side electrode and the substrate 4, and during electrode heating, adhered substances can be firmly attached to the cathode side electrode, anode side electrode, and the substrate 4, so it is possible to suppress the generation of dust particles due to peeling, and the anode during operation. It is possible to avoid frequent removal of stuck substances on the side electrodes or cathode side electrodes, and it is also possible to form a uniform film quality, thereby improving quality. In addition, since the substrate 4 can be directly heated, temperature control of process conditions is easy, and since the substrate 4 portion becomes a hot wall, not only can a good thin film be produced, but also plasma CV
This has effects such as being able to extend the continuous operation time of the D device.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing the configuration of a plasma CVD apparatus to which the first embodiment of the electrode structure of the present invention is applied, FIG. 2 is a sectional view showing the configuration of the plasma CVD apparatus to which the second embodiment is applied, and FIG. is a sectional view showing the configuration of a plasma CVD apparatus to which the third embodiment is applied, FIG. 4 is a sectional view showing the configuration of a plasma CVD apparatus to which the fourth embodiment is applied, and FIG. 5 is a sectional view to which the fifth embodiment is applied. Cross-sectional view showing the configuration of the plasma CVD apparatus, No. 6
The figure is a sectional view showing the structure of a plasma CVD apparatus to which the sixth embodiment is applied, and FIG. 7 is a sectional view showing the structure of a plasma CVD apparatus to which an example of a conventional electrode structure is applied. 1... Vacuum container, 2... Substrate holder,
2a...shaft, 3...gas distribution plate, 4.
...Substrate, 5...Substrate heater, 14...
...Heat radiation member, 31...Flexible joint,
32...Shaft sealing part, 41...Heating plate,
41a...Axis, 61...Ki 3 Tenraku 9 times

Claims (7)

[Claims] (1) Consists of a substrate holder (2) provided in a vacuum container (1) and equipped with a substrate (4), and a gas dispersion plate (3) placed opposite to the substrate holder (2). An electrode structure for a plasma CVD apparatus in which each plate (3) is provided with a heat radiation member (14). (2) The electrode structure for a plasma CVD apparatus according to claim 1, further comprising a substrate heater (5) provided on the back surface of the substrate holder (2). (3) A substrate holder (2) provided inside the vacuum container (1) and having a substrate (4) mounted thereon, a substrate heater (5) arranged opposite to this, and a substrate heater (5) provided on the back side of the substrate heater (5). An electrode structure for a plasma CVD apparatus comprising a gas dispersion plate (3) and a heat radiation member (14) provided on each of the substrate holder (2) and the substrate heater (5). (4) The shaft sealing part (32) is attached to the shaft (2a) of the substrate holder (2).
) is slidably attached, and the shaft sealing part (32) and the vacuum container (1) are connected by a flexible joint (31). Plasma C described
Electrode structure for VD equipment. (5) Inside the vacuum container (1), a heating plate (4
1), the shaft (41a) of the heating plate (41) and the shaft (2a) of the substrate holder (2) are connected, and the heating plate (41
) is provided with a heat radiation member (14).
The electrode structure for a plasma CVD apparatus according to any one of Item 4. (6) Two sets of the substrate heater (5) and the gas dispersion plate (3) are arranged facing each other in the vacuum container (1), and the substrate holder (2) is placed between them. Board (3,3
) or an electrode structure for a plasma CVD apparatus comprising heat radiation members (14) provided on both sides of the substrate heater (5, 5) and the substrate holder (2). (7) The electrode structure for a plasma CVD apparatus according to claim 6, wherein the substrate holder (2) is provided with a holder transfer mechanism (61).