JPH0364482A - Plating solution concentration measurement method, concentration adjustment method, and concentration adjustment device - Google Patents

Plating solution concentration measurement method, concentration adjustment method, and concentration adjustment device

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Publication number
JPH0364482A
JPH0364482A JP1323213A JP32321389A JPH0364482A JP H0364482 A JPH0364482 A JP H0364482A JP 1323213 A JP1323213 A JP 1323213A JP 32321389 A JP32321389 A JP 32321389A JP H0364482 A JPH0364482 A JP H0364482A
Authority
JP
Japan
Prior art keywords
concentration
reducing agent
metal component
measuring
plating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1323213A
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Japanese (ja)
Inventor
Hiroko Takehara
竹原 裕子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of JPH0364482A publication Critical patent/JPH0364482A/en
Pending legal-status Critical Current

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  • Investigating And Analyzing Materials By Characteristic Methods (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明はめっき液の濃度測定lj法と濃度調整方法およ
び濃度調整装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plating solution concentration measuring method, a concentration adjustment method, and a concentration adjustment device.

[従来の技術] 一般的に、金めつきは、はんだ付は性、ワイヤボンディ
ング性等の接続性、耐エツチング性、防錆性、電気伝導
性に優れているところから、配線基板の製造において極
めて重要な技術とされている。
[Prior art] Generally, gold plating is used in the manufacture of wiring boards because it has excellent solderability, connectivity such as wire bonding, etching resistance, rust prevention, and electrical conductivity. It is considered an extremely important technology.

無電解めっきに使用される金めつき液は、通常、めっき
液の安定性に優れているという理由から、シアン系めっ
き液か用いられていた。しかし、シアン系めっき液には
公害対策上問題があるため、近年、金属成分として金イ
オンと、金イオンと錯体を形成する配位子としてチオ硫
酸イオンおよび亜硫酸イオンと、還元剤であるチオ尿素
とを含む、非シアン系無電解金めっき液が提案されてい
る。
The gold plating solution used in electroless plating is usually a cyan-based plating solution because of its excellent stability. However, cyan-based plating solutions have problems in terms of pollution control, so in recent years, plating solutions have been developed that contain gold ions as metal components, thiosulfate ions and sulfite ions as ligands that form complexes with gold ions, and thiourea as a reducing agent. A non-cyanide electroless gold plating solution has been proposed.

」二記非シアン系めっき液を用いてめっきを行なった場
合の、成分濃度の経時変化およびめっき速度について、
第6図および第7図を用いて説明する。
Regarding changes in component concentration over time and plating speed when plating is performed using a non-cyanide plating solution,
This will be explained using FIGS. 6 and 7.

第6図はめっき液を構成する成分を補充液として加えず
にめっきを進行させた場合の成分濃度変化を示す。−力
、第7図はめっきの進行と共に減少していく成分を補充
液として加え、めっき液成分の濃度を一定に保った場合
の成分濃度変化およびめっき速度を示す。
FIG. 6 shows changes in component concentrations when plating is proceeded without adding the components constituting the plating solution as a replenisher. Figure 7 shows changes in component concentration and plating speed when the concentration of the plating solution components is kept constant by adding components as a replenisher that decrease with the progress of plating.

第6図は縦軸に成分a度を、横4リカにめっき時間を取
っている。
In FIG. 6, the vertical axis represents the component a degree, and the horizontal axis represents the plating time.

第6図より明らかなように、めっきが進行するにつれて
、亜硫酸イオンとチオ硫酸イオンの濃度は変化しないが
、金イオンとチオ尿素の濃度が低下していることがわか
る。このために、めっき速度は、次第に低下していく。
As is clear from FIG. 6, as the plating progresses, the concentrations of sulfite ions and thiosulfate ions do not change, but the concentrations of gold ions and thiourea decrease. For this reason, the plating speed gradually decreases.

第7図もまた縦軸に成分a度を、横軸にめっき時間を取
っている。さらに、めっき時間の経過と共にめっき速度
の変化も示している。
In FIG. 7, the vertical axis also shows the component a degree, and the horizontal axis shows the plating time. Furthermore, it also shows the change in plating speed with the passage of plating time.

第7図に示したように、一定時間毎に、めっきの進行に
ともなう金およびチオ尿素の消費量を測定して、消費量
分を補充すると、長時間めっき速度を一定範四内に維持
することができる。
As shown in Figure 7, by measuring the amount of gold and thiourea consumed as plating progresses at regular intervals and replenishing the amount consumed, the plating rate can be maintained within a certain range for a long time. be able to.

以」−のように、無電解めっきは、めっきの進行に什い
、めっき液成分のうちの金属成分と還元剤成分の両方が
消費される。しかも、無電解めっき速度はめっき液成分
の濃度に大きく依存することから、めっき速度を一定に
維持するためには、金属成分と還元剤成分の両方につい
て濃度を測定し、その消費量分を逐次補充する必要があ
る。
As described below, in electroless plating, both the metal component and the reducing agent component of the plating solution components are consumed as the plating progresses. Furthermore, since the electroless plating rate is highly dependent on the concentration of the plating solution components, in order to maintain a constant plating rate, the concentration of both the metal component and the reducing agent component must be measured and the amount consumed must be calculated sequentially. Needs to be replenished.

ここで、各1戊分の濃度の測定は、例えば、金属成分は
原子吸光光度計を使用し、還元剤のチオ尿素はニトロプ
ルシドナトリウム法を使用し、亜硫酸イオンとチオ硫酸
イオンはイオンクロマ1−法を使用して行なうことがで
きる。
Here, to measure the concentration of each component, for example, use an atomic absorption spectrophotometer for metal components, use the sodium nitroprusside method for thiourea as a reducing agent, and use ion chroma 1-1 for sulfite ions and thiosulfate ions. This can be done using the law.

(以下余白) [発明が解決しようとする課題] しかし、前記Jl“シアン系めっき液成分の定量分析方
法は、原子吸光法が高感度のために試料溶液を1回毎に
希釈する必要があり、また、チオ尿素を分析する二I・
ロプルシ1〜す1−リウムが分解しやすい。このため、
測定に時間ががかり、実験室レベルの解析には用いられ
るが、製造工程の解析には適さない。
(The following is a blank space) [Problems to be solved by the invention] However, in the above-mentioned method for quantitative analysis of cyanide plating solution components, it is necessary to dilute the sample solution each time due to the high sensitivity of the atomic absorption method. , and also two I. to analyze thiourea.
Loplusi-1-1-lium is easily decomposed. For this reason,
Measurement takes time, and although it is used for laboratory-level analysis, it is not suitable for analysis of manufacturing processes.

また、無電解めっき液中の金属成分の濃度測定について
は、特開昭63−121668号公報に提案されている
ように、金属イオン自身の着色を利用して、吸光光度法
で測定する方法、または、特開昭60−164239号
公報記載のように、蛍光X線分析法を用いる方法、ある
いは、特開昭62−14053号公報に記載されている
ように、電位差滴定を利用する方法などがある。
Regarding the concentration measurement of metal components in the electroless plating solution, as proposed in JP-A-63-121668, there is a method of measuring by spectrophotometry using the coloring of the metal ions themselves; Alternatively, a method using fluorescent X-ray analysis as described in JP-A-60-164239, or a method using potentiometric titration as described in JP-A-62-14053, etc. be.

そして、無電解めっき液中のホルマリン等の還元剤成分
の濃度測定に関しては、特開昭53−9235号公報に
記載されているように、還元剤の酸化に要する電流量か
ら測定する方法がある。
Regarding the concentration measurement of reducing agent components such as formalin in the electroless plating solution, there is a method of measuring from the amount of current required to oxidize the reducing agent, as described in JP-A-53-9235. .

しかし、」二連した従来技術のうち、金属成分の着色を
利用する方法や電位差滴定を利用する方法は、適用でき
る無電解めっき液の種類は限られており、汎用性に乏し
いという問題がある。
However, among the two conventional techniques, the methods that utilize coloring of metal components and the method that utilizes potentiometric titration have the problem that the types of electroless plating solutions that can be applied are limited, and they lack versatility. .

一方、還元剤成分の濃度測定方法に関しては、還元剤の
他に、亜硫酸イオン、チオ硫酸イオン等の還元性イオン
を錯化剤として多量に含む無電解めっき液に対する配慮
が全くなされていない。
On the other hand, with regard to the method for measuring the concentration of the reducing agent component, no consideration has been given to electroless plating solutions that contain large amounts of reducing ions such as sulfite ions and thiosulfate ions as complexing agents in addition to the reducing agent.

例えば、還元剤の濃度を、還元剤の酸化に要する電流量
から測定する場合には、亜硫酸イオン。
For example, when measuring the concentration of a reducing agent from the amount of current required to oxidize the reducing agent, sulfite ions are used.

チオ硫酸イオンも同時に酸化されるために、還元剤の成
分濃度を正確に測定することができない。
Since thiosulfate ions are also oxidized at the same time, it is not possible to accurately measure the component concentration of the reducing agent.

このように、従来、めっき技術、特に、無電解めっき技
術においては、めっき液の成分濃度を、製造工程におい
て正確に測定できる技術がなく、従って、成分濃度制御
も適切に行なえないという問題があった。
As described above, conventional plating technology, particularly electroless plating technology, has had the problem that there is no technology that can accurately measure the component concentration of the plating solution during the manufacturing process, and therefore, the component concentration cannot be properly controlled. Ta.

本発明の第1の目的は、めっき液の成分濃度の測定方法
、および、めっき液の成分濃度を一定範囲内に制御する
方法とその装置とを提供すること1 にある。
A first object of the present invention is to provide a method for measuring the concentration of components in a plating solution, a method for controlling the concentration of components in the plating solution within a certain range, and an apparatus therefor.

本発明の第2の目的は、めっき液の成分濃度を一定範囲
内に制御できるめっき装置を提供することにある。
A second object of the present invention is to provide a plating apparatus that can control the concentration of components in a plating solution within a certain range.

本発明の第3の目的は、溶液中に含まれる金属I成分濃
度と非金属成分濃度とを測定し、溶液中の溶液の濃度を
一定範囲内に制御できる装置を提供することにある。
A third object of the present invention is to provide an apparatus that can measure the concentrations of metal I components and non-metal components contained in a solution and control the concentration of the solution within a certain range.

[課題を解決するための手段] 本発明の第1の目的は、 金属成分、陰イオンおよび還元剤を含むめっき液の成分
濃度の測定方法であって、前記陰イオンを、前記還元剤
の濃度測定に妨害をj+えない他の陰イオン種に置換し
た後、前1iL!還元剤濃度を測定することを特徴とす
るめっき液の成分濃度測定法によって達成される。
[Means for Solving the Problems] A first object of the present invention is to provide a method for measuring the component concentration of a plating solution containing a metal component, an anion, and a reducing agent, the method comprising: After substituting other anion species that do not interfere with the measurement, 1 iL! This is achieved by a plating solution component concentration measurement method that is characterized by measuring the reducing agent concentration.

金属成分、陰イオンおよび還元剤を含むめっき液の成分
濃度の測定方法であって、前記陰イオンを、前記還元剤
の濃度測定に妨害を与えない他の陰イオン種に置換した
後、前記還元剤濃度を測定2 し、さらに、原子吸光法またはプラズマ発光分析法によ
って、前記金属成分の濃度を測定することを特徴とする
めっき液の成分濃度測定方法によって達成される。
A method for measuring the component concentration of a plating solution containing a metal component, an anion, and a reducing agent, the method comprising: replacing the anion with another anion species that does not interfere with the measurement of the concentration of the reducing agent; This is achieved by a method for measuring the component concentration of a plating solution, which is characterized in that the concentration of the metal component is measured by atomic absorption spectrometry or plasma emission spectrometry.

前記還元剤濃度を、紫外吸収検出器または電位差滴定装
置で測定することを特徴とすることが好ましい。
It is preferable that the reducing agent concentration is measured with an ultraviolet absorption detector or a potentiometric titration device.

金属成分と、還元性イオンと、非イオン性還元剤とを含
むめっき液の成分濃度測定方法であって、前記還元性イ
オンを非還元性イオンに置換した後、前記非イオン性還
元剤の濃度測定および前記金属成分の濃度測定を行なう
ことを特徴とするめっき液の成分濃度測定方法によって
も達成される。
A method for measuring the component concentration of a plating solution containing a metal component, a reducing ion, and a nonionic reducing agent, the method comprising replacing the reducing ions with nonionic ions, and then measuring the concentration of the nonionic reducing agent. This can also be achieved by a method for measuring the concentration of components in a plating solution, which comprises measuring the concentration of the metal component.

めっき液中の金属成分濃度の測定およびこの測定に用い
る金属成分濃度測定手段の較正と、めっき液中の還元剤
濃度の測定およびこの測定に用いる還元剤濃度測定手段
の較正と、めっき液中の陰イオンを前記還元剤の濃度測
定に妨害を与えない他の陰イオン種に置換する操作とを
、予め設定したシーケンスプログラムに従って、シーケ
ンス制御で行ない、さらに、前記測定によって求められ
たH1ll定値と前記較正によって求められた較正値と
から、めっき液中の金属取分濃度と還元剤濃度濃度を演
算によって求めることを特徴とするめっぎ液の成分濃度
測定方法によっても達成される。
Measuring the metal component concentration in the plating solution and calibrating the metal component concentration measuring means used for this measurement; measuring the reducing agent concentration in the plating solution and calibrating the reducing agent concentration measuring means used for this measurement; The operation of replacing the anion with another anion species that does not interfere with the measurement of the concentration of the reducing agent is performed under sequence control according to a preset sequence program, and further, the H1ll constant value determined by the measurement and the above This can also be achieved by a method for measuring the component concentration of a plating solution, which is characterized in that the metal fraction concentration and reducing agent concentration in the plating solution are determined by calculation from the calibration values obtained by calibration.

金属成分、陰イオンおよび還元剤を含むめっき液の濃度
調整方法であって、めっき液中の陰イオンを前記還元剤
の濃度測定に妨害を与えない他の陰イオン種に置換した
後、前記金属成分を測定する金属成分濃度測定手段の較
1Eおよび前記還元剤成分を測定する還元剤濃度測定手
段の較n′:と、前記金属成分濃度測定手段による金属
成分濃度の測定および前記還元剤′a度測測定手段よる
還元剤濃度の測定とから求められた較正値および測定値
により、金属成分濃度と還元剤濃度濃度との消費量を演
算によって求め、さらに、前記消費量に相当する還元剤
および金属成分を含む補充液をめっき液に補充すること
を特徴とするめっき液の濃度調整方法によっても達成さ
れる。
A method for adjusting the concentration of a plating solution containing a metal component, an anion, and a reducing agent, the method comprising: replacing the anion in the plating solution with another anion species that does not interfere with the measurement of the concentration of the reducing agent; Comparison 1E of the metal component concentration measuring means for measuring the component and comparison n' of the reducing agent concentration measuring means for measuring the reducing agent component: and measurement of the metal component concentration by the metal component concentration measuring means and the reducing agent 'a. The consumption amount of the metal component concentration and the reducing agent concentration is determined by calculation using the calibration value and the measured value obtained from the measurement of the reducing agent concentration by the measuring means, and further, the amount of reducing agent and This can also be achieved by a method for adjusting the concentration of a plating solution, which comprises replenishing the plating solution with a replenisher containing a metal component.

金属成分、陰イオンおよび還元剤を含むめっき液の成分
濃度の調整装置であって、前記陰イオンを、還元剤の濃
度測定を妨害しない陰イオン種に置換するイオン交換手
段と、鋪記陰イオン種を含む7容液を用いて前記イオン
交換手段を再生する再生手段と、前記還元剤濃度を測定
するための還元剤濃度測定手段と、前記金属成分濃度を
測定する金属成分濃度測定手段と、前記還元剤濃度測定
手段および前記金属成分濃度測定手段の較正と、還元剤
濃度測定手段および前記金属成分濃度測定手段によるめ
っき液成分の測定とを制御するシーケンス制御手段と、
さらに、前記測定によって求められた測定値と前記較正
によって求められた較正値とから、めっき液中の金属成
分濃度と還元剤濃度濃度を演算する演算制御手段とを有
することを特徴とするめっき液の成分濃度測定装置によ
っても達成される。
A device for adjusting the component concentration of a plating solution containing a metal component, an anion, and a reducing agent, comprising an ion exchange means for replacing the anion with an anion species that does not interfere with measurement of the concentration of the reducing agent; a regenerating means for regenerating the ion exchange means using a seven-volume solution containing seeds; a reducing agent concentration measuring means for measuring the reducing agent concentration; a metal component concentration measuring means for measuring the metal component concentration; Sequence control means for controlling calibration of the reducing agent concentration measuring means and the metal component concentration measuring means, and measurement of plating solution components by the reducing agent concentration measuring means and the metal component concentration measuring means;
The plating solution further comprises a calculation control means for calculating the metal component concentration and the reducing agent concentration in the plating solution from the measured value obtained by the measurement and the calibration value obtained by the calibration. This can also be achieved using a component concentration measuring device.

金属成分、陰イオンおよび還元剤を含むめっき液の成分
濃度の調整装置であって、前記陰イオンを、還元剤の濃
度測定を妨害しない陰イオン種に置換するイオン交換手
段と、前記陰イオン種を含5 6 む溶液を用いて前記イオン交換手段を再生する再生手段
と、前記還元剤濃度を測定するだめの還元剤濃度測定手
段と、前記金属成分濃度を測定する金属成分濃度測定手
段と、前記還元剤濃度測定手段および前記金属成分濃度
測定手段の動作を制御するシーケンス制御手段と、前記
還元剤濃度および前記金属成分濃度の測定値と、それぞ
れの設定濃度との差から還元剤および金属成分の消費量
を算出する算出手段、および、前記消費量に相当する還
元剤および金属成分を含む補充液を、めっき槽へ供給す
る供給手段を備えた演算制御手段とを有することを特徴
とするめっき液の成分濃度調整装置によっても達成され
る。
An apparatus for adjusting the component concentration of a plating solution containing a metal component, an anion, and a reducing agent, the device comprising an ion exchange means for replacing the anion with an anion species that does not interfere with measurement of the concentration of the reducing agent, and the anion species. a regenerating means for regenerating the ion exchange means using a solution containing 5 6 , a reducing agent concentration measuring means for measuring the reducing agent concentration, a metal component concentration measuring means for measuring the metal component concentration, Sequence control means for controlling the operations of the reducing agent concentration measuring means and the metal component concentration measuring means, and determining the reducing agent and metal components from the difference between the measured values of the reducing agent concentration and the metal component concentration and their respective set concentrations. plating comprising: a calculation means for calculating the consumption amount; and an arithmetic control means equipped with a supply means for supplying a replenisher containing a reducing agent and a metal component corresponding to the consumption amount to the plating tank. This can also be achieved by a liquid component concentration adjustment device.

本発明の第2の目的は、 金属成分、陰イオンおよび還元剤を含むめっき液を用い
てめっきを行なうめっき装置であって、前記めっき装置
は、めっき槽とめっき液濃度測定手段、めっき液補充手
段、シーケンス制御手段および演算制御手段を含み、前
記めっき液濃度測定手段は、前記陰イオンを還元剤の濃
度測定を妨害しない他の陰イオン種に置換するイオン交
換手段と、前記還元剤濃度を測定する還元剤濃度測定手
段と、前記金属成分濃度を測定する金属濃度測定手段と
を備え、前記シーケンス制御手段は、前記めっき液濃度
測定手段の動作を制御し、前記演算制御手段は、前記還
元剤濃度および金属取分濃度の測定値と、それぞれの設
定濃度との差から還元剤および金属成分の消費量を算出
する算出手段と、前記消費量に相当する還元剤および金
属成分を含む補充液を、前記めっき液補充部からめっき
槽へ供給する供給手段とを備えたことを特徴とするめっ
き装置によって達成される。
A second object of the present invention is a plating apparatus that performs plating using a plating solution containing a metal component, an anion, and a reducing agent, the plating apparatus comprising a plating tank, a plating solution concentration measuring means, and a plating solution replenisher. the plating solution concentration measuring means includes an ion exchange means for replacing the anion with another anion species that does not interfere with the measurement of the reducing agent concentration; comprising a reducing agent concentration measuring means for measuring the concentration of the plating solution and a metal concentration measuring means for measuring the concentration of the metal component, the sequence control means controlling the operation of the plating solution concentration measuring means, and the arithmetic control means controlling the reduction Calculation means for calculating the consumption amount of the reducing agent and metal component from the difference between the measured values of the agent concentration and metal fraction concentration and the respective set concentrations, and a replenisher containing the reducing agent and metal component corresponding to the consumption amount. This is achieved by a plating apparatus characterized by comprising a supply means for supplying the plating solution from the plating solution replenishment section to the plating tank.

本発明の第3の目的は、 溶液中に含まれる金属成分の濃度を測定する金属成分濃
度測定手段と、非金属成分濃度を測定する非金属成分濃
度測定手段とを備え、さらに、前記金属成分濃度測定手
段および前記非金属成分濃度測定手段の動作を制御する
制御機能と、前記金属成分の濃度および前記非金属成分
の濃度の測定値と、それぞれの設定濃度との差から金属
成分と非金属成分の消費量に相当する、金属成分を含む
補充液と非金属成分を含む補充液を供給する似絵機能と
を備えたことを特徴とする濃度管理装置によって達成さ
れる。
A third object of the present invention is to provide a solution comprising: a metal component concentration measuring means for measuring the concentration of a metal component contained in a solution; and a non-metal component concentration measuring means for measuring a non-metal component concentration; A control function for controlling the operations of the concentration measuring means and the non-metal component concentration measuring means, and determining the concentration of the metal component and the non-metal component from the difference between the measured values of the concentration of the metal component and the concentration of the non-metal component and their respective set concentrations. This is achieved by a concentration control device characterized by having a similar function of supplying a replenisher containing a metal component and a replenisher containing a non-metal component corresponding to the consumption amount of the component.

上記金属成分濃度測定手段は、原子吸光光度訓またはプ
ラズマ発光分光光度3]であることを特徴とすることが
好ましい。
The metal component concentration measuring means is preferably atomic absorption spectrophotometry or plasma emission spectrophotometry.

上記非金属濃度測定手段は、陰イオン交換器、および、
紫外吸収検出器または電位差滴定装置を有することを特
徴とすることがさらに好ましい。
The nonmetal concentration measuring means includes an anion exchanger, and
More preferably, it is characterized by having an ultraviolet absorption detector or a potentiometric titration device.

[作 用」 陰イオン交換器内の陰イオン交換物質を、再生液、例え
ば、KCQ(塩化カリウム)溶液を用いて塩素イオン型
に再生し、その中に一定量の焦電解めっき液試料を流し
た場合、めっき液中の亜硫酸イオン、チオ硫酸イオンや
、それらが金属イオンに配位した錯イオン等は、塩素イ
オンに比へて陰イオン交換物質に対する親和性が大ぎい
ために、陰イオン交換物質に捕捉され、代りにそれと等
当量の塩素イオンが流出する。
[Function] The anion exchange material in the anion exchanger is regenerated into a chloride ion type using a regenerating solution, such as a KCQ (potassium chloride) solution, and a certain amount of the pyrolytic plating solution sample is poured into it. In this case, sulfite ions, thiosulfate ions, and complex ions such as those coordinated with metal ions in the plating solution have a greater affinity for anion exchange materials than chlorine ions. It is captured by the substance, and an equivalent amount of chlorine ion flows out in return.

一方、無電解めっき液に含まれるチオ尿素、ホルマリン
等の還元剤は、非イオン(生のために、陰イオン交換物
質に捕捉されず、そのまま陰イオン交換器から溶出する
On the other hand, since reducing agents such as thiourea and formalin contained in the electroless plating solution are non-ionic (raw), they are not captured by the anion exchange material and are eluted from the anion exchanger as they are.

こうして、めっき液中に含まれる還元性イオンを除去す
ることができる。
In this way, reducing ions contained in the plating solution can be removed.

めっき液に含まれる還元剤が、例えば、チオ尿素のよう
に紫外吸収を示す物質の場合には、陰イオン交換器の後
に設けた紫外吸収検出器でチオ尿素の濃度を測定するこ
とができる。また、還元剤が、例えばホリマリンのよう
に紫外吸収を示さない物質の場合には、ホルマリンの酸
化しこ要する電流量から濃度を算出することができる。
If the reducing agent contained in the plating solution is a substance that exhibits ultraviolet absorption, such as thiourea, the concentration of thiourea can be measured with an ultraviolet absorption detector provided after the anion exchanger. Furthermore, when the reducing agent is a substance that does not exhibit ultraviolet absorption, such as formalin, the concentration can be calculated from the amount of current required to oxidize formalin.

陰イオン交換物質としては、陰イオン交換樹脂カラム、
陰イオン交換膜等を用いることができる。
Examples of anion exchange materials include anion exchange resin columns,
An anion exchange membrane or the like can be used.

陰イオン交換物質の再生液としては、KCQ溶液以外に
塩素イオンの他の塩、すなわち、NaCQ 。
In addition to the KCQ solution, other salts of chloride ions, such as NaCQ, can be used as regenerating solutions for anion exchange materials.

NH4CQ、溶液を使用することもできる。また、塩素
イオン以外にも陰イオン交換物質に対する親和性の小さ
い陰イオンの溶液、例えばNaHCO39 20〜 やK HCO、溶液を用いて T(CO2型に再生して
使用することも可能である。
NH4CQ, a solution can also be used. In addition to chlorine ions, it is also possible to use a solution of anions that have a low affinity for anion exchange materials, such as NaHCO3920~ and KHCO, and regenerate them into T(CO2 type).

一方、めっき液に含まれる金成分濃度は、原子吸光光度
割により測定される。
On the other hand, the concentration of gold components contained in the plating solution is measured by atomic absorption spectrometry.

上記測定方法により、めっきの進行に伴い濃度低下を起
こす金属イオンおよび還元剤の濃度を測定することがで
きる。
By the above measurement method, it is possible to measure the concentration of metal ions and reducing agent, which decrease in concentration as plating progresses.

演算制御手段は、測定されためっき液の濃度と、前もっ
て設定されためっき液の管理濃度との差から、めっきの
進行に什う、成分の消費量を求めて補充量を算出する。
The arithmetic control means determines the consumption amount of the component for the progress of plating from the difference between the measured concentration of the plating solution and the control concentration of the plating solution set in advance, and calculates the replenishment amount.

そして、消耗成分量の情報に従い、補充液槽から消*量
を逐次補給することにより、めっき液の成分濃度を常に
一定範囲内に管理する。この結果、めっき速度を一定に
保つことができる。
Then, the component concentration of the plating solution is always managed within a certain range by sequentially replenishing the depleted amount from the replenisher tank according to the information on the amount of consumable components. As a result, the plating speed can be kept constant.

E実施例コ 以下に本発明の実施例を挙げ、図面に基づいて、さらに
詳細に説明する。なお、本発明はこれに限定されるもの
ではない。
E Examples Examples of the present invention will be described below in more detail based on the drawings. Note that the present invention is not limited to this.

実施例−1 第1図は、K AuCQ 4.TNa2S○3 + N
a2 S 20゜およびチオ尿素をi成分とする無電解
めっき液中のチオ尿素濃度の測定に用いる装置の一例を
示す説明図である。
Example-1 FIG. 1 shows K AuCQ 4. TNa2S○3 + N
FIG. 2 is an explanatory diagram showing an example of an apparatus used to measure the thiourea concentration in an electroless plating solution containing a2S 20° and thiourea as the i component.

本実施例のa度d1す定は、第1図に示すように、キャ
リヤ液である水(r−r2o)を貯留する水槽l、再生
液である0、2N−K CQ溶液を貯留する再生液槽2
、定量ポンプ3,4、六方バルブ5、サンプリングルー
プ6、サンプル注入[136、陰イオン交換器7、陰イ
オン交換膜チューブ8、紫外吸収検出器9および記録計
37を備えた測定装置を用いて行なわれる。
As shown in Fig. 1, the a degree d1 setting of this embodiment includes a water tank 1 for storing water (r-r2o) which is a carrier liquid, and a regeneration tank 1 for storing a 0,2N-K CQ solution which is a regenerating liquid. Liquid tank 2
, using a measuring device equipped with metering pumps 3, 4, hexagonal valve 5, sampling loop 6, sample injection [136, anion exchanger 7, anion exchange membrane tube 8, ultraviolet absorption detector 9 and recorder 37] It is done.

陰イオン交換器7は、陰イオン交換膜チューブ8を内側
に備えた二重管になっている。陰イオン交換膜チューブ
8は、定量ポンプ4を用いて、2mQ/分の流速で、0
.2N −K CQの再生液を再生液槽2が、陰イオン
交換膜チューブ8の外筒部分に送られて、常時塩素イオ
ン型に再生されている。キャリヤ液(H20)は、水槽
1から2 to Q /1 分の流速か’)i(’時陰イオン交換膜チューブ8内か
ら、紫外吸収検出器9へと送られている。
The anion exchanger 7 is a double tube equipped with an anion exchange membrane tube 8 inside. The anion exchange membrane tube 8 was heated to 0.0 mQ/min using the metering pump 4 at a flow rate of 2 mQ/min.
.. The regenerating liquid of 2N-K CQ is sent to the regenerating liquid tank 2 to the outer cylindrical part of the anion exchange membrane tube 8, and is constantly regenerated into chlorine ion type. The carrier liquid (H20) is sent from the water tank 1 to the ultraviolet absorption detector 9 from within the anion exchange membrane tube 8 at a flow rate of 2 to Q/1 min.

六方バルブ5が、第1図に示す実線の接続状態である時
に、サンプル注入n 36から50倍に希釈されためっ
き液試料を注入すると、サンプリングループ6内に一定
量のめつぎ液試料が採取される。
When the six-way valve 5 is in the connected state shown by the solid line in FIG. be done.

次に、六方バルブ5を切換えて、同図に示す点線状態に
接続すると、キャリヤ液(H2O)は、サンプリングル
ープ6内を流れ、サンプリングループ6内に採取されて
いためっき液試料は陰イオン交換膜チューブ8から紫外
吸収検出器9へと運ばれる。
Next, when the six-way valve 5 is switched and connected to the state shown by the dotted line in the figure, the carrier liquid (H2O) flows through the sampling loop 6, and the plating solution sample collected in the sampling loop 6 undergoes anion exchange. From the membrane tube 8 it is transported to an ultraviolet absorption detector 9.

めっき液試料中の亜硫酸イオン、チオ硫酸イオンや[A
u(S、03)2]  等の金の錯イオン類は、陰イオ
ン交換膜上に捕捉され、代りに塩素イオンが溶出されて
キャリヤ液により紫外吸収検出器9へ送られる。還元剤
であるチオ尿素は、非イオン性物質であるため、陰イオ
ン交換膜チューブ8内で捕捉されることなく紫外吸収検
出器9に運ばれる。
Sulfite ions, thiosulfate ions and [A
Gold complex ions such as u(S,03)2] are captured on the anion exchange membrane, and chlorine ions are eluted instead and sent to the ultraviolet absorption detector 9 by the carrier liquid. Since thiourea, which is a reducing agent, is a nonionic substance, it is transported to the ultraviolet absorption detector 9 without being captured within the anion exchange membrane tube 8.

紫外吸収検出器9の測定波長は、240nmに設定され
ている。この紫外吸収検出器9を用いて、以下に述べる
原理に基づき、めっき液中のチオ尿素濃度を測定するこ
とができる。
The measurement wavelength of the ultraviolet absorption detector 9 is set to 240 nm. Using this ultraviolet absorption detector 9, the thiourea concentration in the plating solution can be measured based on the principle described below.

すなわち、チオ尿素の紫外吸収は第2図に示す吸収曲線
から明らかなように、235nmに極大吸収を示すのに
対して、亜硫酸イオン、チオ硫酸イオン等のイオン交換
により溶出される塩素イオンは紫外吸収を示さない。
That is, as is clear from the absorption curve shown in Figure 2, the ultraviolet absorption of thiourea shows maximum absorption at 235 nm, whereas chlorine ions eluted by ion exchange such as sulfite ions and thiosulfate ions have a maximum absorption at 235 nm. Shows no absorption.

また、めっきの進行に伴いチオ尿素が酸化されて尿素が
生成されるが、この尿素も第2図に示すように、紫外吸
収を示さない。
Further, as plating progresses, thiourea is oxidized to produce urea, but as shown in FIG. 2, this urea also does not exhibit ultraviolet absorption.

したがって、紫外吸収検出器90波長を235〜24.
Onmに設定すれは、めっき液中のチオ尿素のみの吸光
度を測定することができる。
Therefore, the ultraviolet absorption detector 90 wavelength is 235 to 24.
When set to Onm, the absorbance of only thiourea in the plating solution can be measured.

なお、めっき液中のチオ尿素濃度の算出は、設定濃度の
チオ尿素標準液を用いて、」二層と同様の操作で吸光度
を測定し、それをもとに比例計算で3 24− 求めることができる。
In addition, to calculate the thiourea concentration in the plating solution, use a thiourea standard solution with a set concentration, measure the absorbance in the same manner as for the two-layer method, and calculate the absorbance using a proportional calculation based on the absorbance. I can do it.

また、陰イオン交換器7は、陰イオン交換膜チューブ8
を利用する方法の他に、平膜状の陰イオン交換膜を二層
重ね、内側に濃度を測定するめっき液試料、外側に再生
液であるKCQ溶液を流す構造のものであってもよい。
Further, the anion exchanger 7 includes an anion exchange membrane tube 8
In addition to the method using this method, a structure may be used in which two flat anion exchange membranes are stacked, and the plating solution sample whose concentration is to be measured is flowed on the inside, and the KCQ solution as a regenerating solution is flowed on the outside.

実施例−2 第3図は、無電解めっき液′!A置に適用した成分濃度
調整装置の一例の構成を示す。
Example-2 Figure 3 shows electroless plating solution'! The configuration of an example of a component concentration adjusting device applied to position A is shown.

本実施例は、上記装置を用いて、K A、、uCQ 、
 。
In this example, using the above device, K A, , uCQ,
.

Na25Oa+ Na2S2O3,チオ尿素などを主1
戊分とする無電解めっき液の成分濃度の調整を行なって
いる。
Mainly Na25Oa+ Na2S2O3, thiourea etc.
We are adjusting the component concentration of the electroless plating solution used as a precipitate.

本実施例の成分濃度調整装置は、第3図に示すように、
キャリヤ液である水をJl’i’留する水槽■。
As shown in FIG. 3, the component concentration adjusting device of this embodiment has the following features:
A water tank ■ in which water, which is a carrier liquid, is distilled.

再生液である0、2N−KCQ溶液を貯留する再生液槽
2、定量ポンプ3,4、六方バルブ5、サンプリングル
ープ6、陰イオン交換器7、陰イオン交換膜チューブ8
および紫外吸収検出器9を有する。なお、これらは、上
連の第1図に示した還元剤のa度測定装置とほぼ同様の
構成である。
Regeneration liquid tank 2 for storing 0,2N-KCQ solution as regeneration liquid, metering pumps 3, 4, six-way valve 5, sampling loop 6, anion exchanger 7, anion exchange membrane tube 8
and an ultraviolet absorption detector 9. It should be noted that these devices have almost the same configuration as the reducing agent a degree measuring device shown in FIG. 1 of the above series.

本実施例の成分濃度調整装置は、さらに、めっき液の金
成分濃度の測定手段として原子吸光光度言135と、後
追する演算制御部10とを設けている。
The component concentration adjusting device of this embodiment further includes an atomic absorption photometer 135 as a means for measuring the gold component concentration of the plating solution, and an arithmetic control unit 10 that follows.

本実施例の成分濃度調整装置は、めっき槽13中のめっ
き液の濃度調整手段として、水槽上と全補充液槽14と
チオ尿素補充液槽15とを設けている。また、紫外吸収
検出器9と原子吸光光度計35とを較正するのに使用さ
れる較正液を蓄える全標準液槽j土とチオ尿素標準液4
1!+12とを備えている。
The component concentration adjusting device of this embodiment is provided with a water tank top, a total replenisher tank 14, and a thiourea replenisher tank 15 as means for adjusting the concentration of the plating solution in the plating tank 13. In addition, a total standard solution tank J soil and thiourea standard solution 4 is used to store calibration solutions used to calibrate the ultraviolet absorption detector 9 and the atomic absorption spectrometer 35.
1! +12.

上記各槽と、紫外吸収検出器9および原子吸光光度計3
5とを結ぶ配管系は、定量ポンプ3,4゜25〜27.
33と、サンプリングループ6を備えた六方バルブ5と
、サンプリングループ29を備えた六方バルブ28と、
電磁弁16〜22と、マユホール1−23,24と、希
釈槽30とを備えて構成される。
Each of the above tanks, ultraviolet absorption detector 9 and atomic absorption photometer 3
The piping system connecting 5 is a metering pump 3,4゜25~27.
33, a six-way valve 5 with a sampling loop 6, a six-way valve 28 with a sampling loop 29,
It includes electromagnetic valves 16 to 22, cocoon holes 1-23 and 24, and a dilution tank 30.

希釈槽30は、電磁弁31を介して窒素ボンベ32と結
ばれ、希釈槽に送lすれた測定液を窒素気流中で撹拌す
ることができる。
The dilution tank 30 is connected to a nitrogen cylinder 32 via a solenoid valve 31, and the measurement liquid sent to the dilution tank can be stirred in a nitrogen stream.

定量ポンプ25の吸引側には、マユホール1へ23を介
して電磁弁16〜19か接続され、吐出側は、六方バル
ブ28を経て、希釈槽30へと配管されている。
The suction side of the metering pump 25 is connected to the cocoon hole 1 via 23 to electromagnetic valves 16 to 19, and the discharge side is piped to a dilution tank 30 via a six-way valve 28.

定量ポンプ26の吸引側には、マユホール1〜24を介
して電磁弁20〜22が接続され、吐出側のめっき槽1
3と、全補充液槽11およびチオ尿素補充液槽15とが
結ばれている。
Electromagnetic valves 20 to 22 are connected to the suction side of the metering pump 26 via the eyebrow holes 1 to 24, and the plating tank 1 on the discharge side
3 is connected to the total replenisher tank 11 and the thiourea replenisher tank 15.

定量ポンプ27の吸引側には水槽1が接続され、吐出側
は、六方バルブ28を経て、希釈槽30へ水を送るよう
に配管されている。
The water tank 1 is connected to the suction side of the metering pump 27, and the discharge side is piped to send water to a dilution tank 30 via a six-way valve 28.

定量ポンプ27の吸引側には希釈槽30が接続され、吐
出側は、六方バルブ5を経て、陰イオン交換器7に通じ
るように配管されている。
A dilution tank 30 is connected to the suction side of the metering pump 27, and the discharge side is piped to communicate with the anion exchanger 7 via the six-way valve 5.

演算制御装置10は、定量ポンプ3,4.25〜27お
よび33のオン・オフ制御、電磁弁16〜22および3
1の開閉制御、六方バルブ5゜28の切換制御、紫外吸
収検出器9および原子吸光光度計35からのデータ信号
の採取、濃度算出、補充する補充液の液量の算出等の演
算操作を行う。
The arithmetic and control unit 10 controls on/off of the metering pumps 3, 4, 25-27 and 33, and solenoid valves 16-22 and 3.
1, switching control of the six-way valve 5°28, collection of data signals from the ultraviolet absorption detector 9 and atomic absorption photometer 35, calculation of concentration, calculation of the amount of replenisher to be refilled, etc. .

さらに、演算制御装置]0は、めっき槽13に、全補充
液槽14、チオ尿素補充液槽15がら必要量の補充液を
0(給し、めっき液の成分濃度を設定の範囲に調整する
Furthermore, the arithmetic and control unit]0 supplies the required amount of replenisher to the plating tank 13 from the total replenisher tank 14 and the thiourea replenisher tank 15, and adjusts the component concentration of the plating solution to the set range. .

この演算制御装置は、図示しないが、例えば、中央処理
装置(CP U)と、このCP Uの動作プログラムや
、演算データ等を格納するメモリ、演算結果を可視表示
する出力装置、データ、制御信号等の入出力処理を行な
うT/○、インターフェース、外部から指示や評価を与
える入力装置等を備えて構成される。
Although not shown, the arithmetic and control unit includes, for example, a central processing unit (CPU), a memory for storing the CPU's operating program, arithmetic data, etc., an output device for visually displaying the arithmetic results, data, and control signals. It is configured with a T/○ that performs input/output processing such as, an interface, an input device that gives instructions and evaluations from the outside, etc.

次に、めっき槽13内のめっき液成分濃度を調整する際
の各部の動作について説明する。
Next, the operation of each part when adjusting the concentration of the plating solution components in the plating tank 13 will be explained.

まず、演算制御装置10からの指令により、電磁弁19
を開き、定量ポンプ25を廓動させて。
First, in response to a command from the arithmetic and control unit 10, the solenoid valve 19
, and rotate the metering pump 25.

めっき槽13からめっき液の一部を、六方バルブ28の
サンプリンタループ29内に採取する。定量ポンプ27
は、一定時間開動して希釈槽30に7 一定量のH2O(水)を送入するが、途中、六方バルブ
28の切換えにより、サンプリングループ29内に採取
しためっき液試料も同時に希釈槽30に送り込む。
A portion of the plating solution from the plating tank 13 is collected into the sampler loop 29 of the hexagonal valve 28. Metering pump 27
is opened for a certain period of time to feed a certain amount of H2O (water) into the dilution tank 30, but during the process, the plating solution sample collected in the sampling loop 29 is also simultaneously transferred to the dilution tank 30 by switching the six-way valve 28. Send it in.

その後、電磁弁31を開いて、短時間窒素ガスを希釈槽
30に流して液の撹拌を行い、めっき液を希釈槽30内
で所定倍率に希釈する。希釈めっき液試料の一部は、オ
ートサンプラー34で原子吸光光度計35に送られ、め
っき液中の全濃度の測定が行われる。
Thereafter, the electromagnetic valve 31 is opened, nitrogen gas is flowed into the dilution tank 30 for a short time to stir the solution, and the plating solution is diluted to a predetermined ratio in the dilution tank 30. A portion of the diluted plating solution sample is sent to an atomic absorption spectrophotometer 35 by an autosampler 34, and the total concentration in the plating solution is measured.

一方、定量ポンプ33の開動により、希釈めっき液試料
の一部は、六方バルブ5のサンプリングループ6内に分
取され、以下、第1図に示した還元剤の濃度測定装置に
おける方法と同様の方法でめっき液中のチオ尿素の濃度
が測定される。
On the other hand, by opening the metering pump 33, a part of the diluted plating solution sample is collected into the sampling loop 6 of the hexagonal valve 5, and the following procedure is carried out in the same manner as in the reducing agent concentration measuring device shown in FIG. The method measures the concentration of thiourea in the plating solution.

なお、これら六方バルブの切換えおよび定量ポンプの暉
動等は、演算制御装置10を用いて自動制御によって行
われる。
Note that the switching of these six-way valves, the movement of the metering pump, etc. are automatically controlled using the arithmetic and control device 10.

原子吸光光度計35および紫外吸収検出器9の較正は、
金標増液槽11蓄えられた金の標準液お8− よびチオ尿素標準液槽12に蓄えられたチオ尿素の標準
液を、めっき液中の金、チオ尿素の管理(設定)濃度と
等濃度に調整し、最低101回、上記めっき液の成分濃
度測定の場合と同様の操作で実施する。
Calibration of the atomic absorption photometer 35 and the ultraviolet absorption detector 9 is as follows:
The gold standard solution stored in the gold standard liquid enrichment tank 11 and the thiourea standard solution stored in the thiourea standard solution tank 12 are used to control (set) concentrations of gold and thiourea in the plating solution. The concentration is adjusted and carried out at least 101 times in the same manner as in the case of measuring the component concentration of the plating solution.

標準液を用いて得られた補iTE 4rfを、演算制御
装置10に記憶させておき、それとの比例割算により、
めっき液中の金、チオ尿素濃度を算出し、さらに、管理
濃度からのずれをもとに、それらの補充量を算出する。
The supplementary iTE 4rf obtained using the standard solution is stored in the arithmetic and control unit 10, and by proportional division with it,
Calculate the gold and thiourea concentrations in the plating solution, and further calculate their replenishment amounts based on the deviation from the control concentration.

そして、定量ポンプ26を用いて、全補充液槽14およ
びチオ尿素補充液槽]5から、それぞれの補充液を」二
層算出した補充量分、めっき槽13に補充する。
Then, using the metering pump 26, the plating tank 13 is replenished with each replenisher from the total replenisher tank 14 and the thiourea replenisher tank 5 by the calculated replenishment amount.

すなわち、」−記の方法で測定した金、チオ尿素の濃度
、金、チオ尿素の補充液の濃度、めっき槽13の液量、
定量ポンプ26の流速をもとに、金。
That is, the concentration of gold and thiourea, the concentration of the gold and thiourea replenisher, the liquid volume in the plating tank 13, measured by the method described in "-",
Gold based on the flow rate of the metering pump 26.

チオ尿素の補充時間を算出し、電磁弁20および2土を
順次所定時間開放することにより、必要量の補充液を補
充することかできる。
By calculating the replenishment time of thiourea and sequentially opening the solenoid valves 20 and 2 for a predetermined period of time, the required amount of replenisher can be replenished.

なお、全補充後およびチオ尿素補充後には、電磁弁22
を開いて配管系を水で洗d卜する。
In addition, after full replenishment and thiourea replenishment, the solenoid valve 22
Open it and wash the piping system with water.

(以下余白) 実施例−3 第4図は、第3図とは異なる濃度管理装置の一実施例を
示す。
(The following is a blank space) Example-3 FIG. 4 shows an example of a concentration control device different from that shown in FIG. 3.

本実施例は、第3図で示す実施例と同様に、測定装置と
して原子吸光光度計と紫外吸収検出器とを使用している
が、本実施例はあらたにpH電極を設け、さらに、原子
吸光光度計の較正方法と配管系とが異なる。
Similar to the embodiment shown in FIG. 3, this embodiment uses an atomic absorption spectrophotometer and an ultraviolet absorption detector as measurement devices, but this embodiment additionally includes a pH electrode and an atomic The calibration method of the spectrophotometer and the piping system are different.

金成分としてKAuCQ4を含み、還元性を有するNa
2S 203r Na2S Oa +チオ尿素を含む無
電解めっき液の濃度を管理する例を説明する。
Contains KAuCQ4 as a gold component and has reducing properties.
An example of controlling the concentration of an electroless plating solution containing 2S 203r Na2S Oa + thiourea will be described.

本実施例の濃度管理装置は、めっき液中の金の成分濃度
を測定する原子吸光光度計102と、亜硫酸イオンとチ
オ硫酸イオンなどの還元性の陰イオンを、非還元性のイ
オンに交換するイオン交換膜チューブ201を備えた陰
イオン交換器202と、めっき液中で還元剤として働く
、チオ尿素の成分濃度を測定する紫外吸収検出器203
と、pH電極303およびpHメーター302と、各測
定装置の較正およびめっき液成分の濃度測定を行31 なわせる制#4機能を備えたシーケンサ501と、めっ
き液成分の消費量を算出する演算機能および消費された
成分を供給を制御する供給制御機能とを備えた演算制御
手段401−とを有する。
The concentration control device of this embodiment includes an atomic absorption spectrophotometer 102 that measures the concentration of gold components in the plating solution, and a device that exchanges reducing anions such as sulfite ions and thiosulfate ions with non-reducing ions. An anion exchanger 202 equipped with an ion exchange membrane tube 201, and an ultraviolet absorption detector 203 that measures the concentration of thiourea, which acts as a reducing agent in the plating solution.
, a pH electrode 303 and a pH meter 302, a sequencer 501 equipped with a control #4 function that calibrates each measuring device and measures the concentration of plating solution components, and a calculation function that calculates the consumption amount of the plating solution components. and an arithmetic control means 401- having a supply control function for controlling the supply of consumed components.

演算制御装置401は、1)在連した実施例2に示す演
算制御装置10とほぼ同様に構成される。
The arithmetic and control device 401 is configured in substantially the same manner as the arithmetic and control device 10 shown in the second embodiment.

シーケンサ50]は、あらかしめ設定したプログラム制
御手順をプログラムとして格納するメモリと、このメモ
リに格納されるプログラムに従って、電磁弁、定量ポン
プ、六方バルブ等の動作をつく時制御するC P Uと
を備えて構成される。
The sequencer 50 has a memory that stores preset program control procedures as a program, and a CPU that controls the operations of solenoid valves, metering pumps, six-way valves, etc. according to the programs stored in this memory. Prepared and configured.

シーケンサ501は、演算制御手段401の指示により
作動する。
The sequencer 501 operates according to instructions from the calculation control means 401.

なお、第4図において、実線は配管系であり、破線は信
号の伝達路である。シーケンサ50 、’lの伝達路は
図示していない。
In addition, in FIG. 4, the solid line is the piping system, and the broken line is the signal transmission path. The transmission path of the sequencer 50,'l is not shown.

さらに、本実施例の濃度管理装置は、原子吸光光度1(
102を較正する標準液に用いられる金属成分標準液槽
610ならびに還元剤添加液槽618と、紫外吸収検出
器203を較正する標準32− 液を蓄える還元剤標準液槽611と、pH電極302を
較正する標準液を蓄えるpH緩衝液槽612と、めっき
によって消費された金属イオンを補充する金属成分補充
液11111614と、めっきによって消費された還元
剤を補充する還元剤補充液#11615と、ρI−Tを
調整するp H調整液補充液槽616とを有する。
Furthermore, the concentration control device of this example has an atomic absorption luminance of 1 (
A metal component standard solution tank 610 and a reducing agent addition solution tank 618 are used as standard solutions for calibrating the ultraviolet absorption detector 202, a reducing agent standard solution tank 611 stores a standard 32- solution for calibrating the ultraviolet absorption detector 203, and a pH electrode 302. A pH buffer tank 612 that stores a standard solution to be calibrated, a metal component replenisher 11111614 that replenishes metal ions consumed by plating, a reducing agent replenisher #11615 that replenishes reducing agent consumed by plating, and ρI- It has a pH adjustment solution replenishment tank 616 for adjusting T.

陰イオン交換器202に流される陰イオンを供給する再
生溶液は、再生液槽6]−9に蓄えられる。
A regeneration solution that supplies anions to be flowed into the anion exchanger 202 is stored in a regeneration liquid tank 6]-9.

また、配管の洗浄および試料溶液の希釈に使用される水
は、水槽617に蓄えられる。
Further, water used for cleaning the piping and diluting the sample solution is stored in a water tank 617.

演算制御手段401の指令により、めっき、槽61〜6
5に補充される補充液には、金属成分補充液槽614、
還元剤補充液槽615およびpH調整液補充液槽616
に蓄えられる液が使用される。
Plating, tanks 61 to 6
The replenishment liquid to be refilled in the tank 614 includes a metal component replenishment liquid tank 614,
Reducing agent replenisher tank 615 and pH adjusting solution replenisher tank 616
The liquid stored in is used.

第4図に図示されているめっき槽61〜65は、本実施
例の装置の中に組み込まれても、あるいは、装置外から
配管系によって結ばれていてもよい。
The plating tanks 61 to 65 shown in FIG. 4 may be incorporated into the apparatus of this embodiment, or may be connected from outside the apparatus by a piping system.

また、めっき槽の数は5個に限定されるものではない。Further, the number of plating tanks is not limited to five.

前記各測定装置および前記各溶液槽は配管系によって結
ばれており、各配管系には目的に応じて、電磁弁、マニ
ホールド、言方バルブ、六方バルブおよび定量ポンプが
設けられている。
Each of the measuring devices and each of the solution tanks are connected by a piping system, and each piping system is provided with a solenoid valve, a manifold, a word valve, a six-way valve, and a metering pump depending on the purpose.

めっき槽61〜65には、その一方に、各々、電磁弁6
26〜630が接続されている。電磁弁625の一方は
水槽61−7と接続している。電磁弁625〜630の
他方はマニホールド64]−を介して三方バルブ650
の一方に接続している。
Each of the plating tanks 61 to 65 has a solenoid valve 6 on one side thereof.
26 to 630 are connected. One end of the solenoid valve 625 is connected to the water tank 61-7. The other of the solenoid valves 625 to 630 is connected to the three-way valve 650 via the manifold 64
is connected to one side.

前記金属成分標準液槽610と、還元剤標準液槽61−
1と、pH緩衝液槽6]2と、後述するNa2S703
溶液槽613とは、その一方に、各々、電磁弁621〜
624が接続されている。電磁弁620の一方は水槽6
17と接続している。電磁弁620〜624の他方は、
マニホールド640を介して三方バルブ650の一方に
接続している。
The metal component standard solution tank 610 and the reducing agent standard solution tank 61-
1, pH buffer tank 6] 2, and Na2S703, which will be described later.
The solution tank 613 has electromagnetic valves 621 to 621 on one side, respectively.
624 is connected. One side of the solenoid valve 620 is connected to the water tank 6
It is connected to 17. The other of the solenoid valves 620 to 624 is
It is connected to one side of a three-way valve 650 via a manifold 640.

三方バルブ650の残る−・方は、試料採取用の定量ポ
ンプ651の吸入側に接続されており、試料採取用の定
量ポンプ65↓の吐出側は、サンプルループ66↓を持
つ六方バルブ660の1一つのポートに接続している。
The remaining - side of the three-way valve 650 is connected to the suction side of the metering pump 651 for sample collection, and the discharge side of the metering pump 65↓ for sample collection is connected to one side of the six-way valve 660 having the sample loop 66↓. Connected to one port.

六方バルブ660の別のポートにはpH電極302が挿
入されたフローセル301が接続している。フローセル
301には、pH電極302が挿入されており、そこで
測定されるpHは、p T−Iメータ303に表示され
る。
A flow cell 301 in which a pH electrode 302 is inserted is connected to another port of the six-way valve 660. A pH electrode 302 is inserted into the flow cell 301, and the pH measured there is displayed on a pTI meter 303.

吸引側が水槽6上7に接続している定量ポンプ652は
、その吐出側を六方バルブ660を介して希釈槽670
に接続している。希釈槽670内には、窒素ガスボンベ
680から電磁弁681を介して窒素ガスが送り込まれ
る。電磁弁671は希釈槽670内の溶液を廃棄する際
に用いられる。
The metering pump 652 whose suction side is connected to the top 7 of the water tank 6 has its discharge side connected to the dilution tank 670 via a six-way valve 660.
is connected to. Nitrogen gas is fed into the dilution tank 670 from a nitrogen gas cylinder 680 via a solenoid valve 681 . The solenoid valve 671 is used when discarding the solution in the dilution tank 670.

定量ポンプ656の吸引側は、希釈槽670から、サン
プルループ665を持つ六方バルブ664、および、サ
ンプルループ667を持つ六方バルブ666を通る希釈
試料採取用の配管がつながっている。
The suction side of the metering pump 656 is connected to piping for collecting a diluted sample that passes from the dilution tank 670 through a six-way valve 664 having a sample loop 665 and a six-way valve 666 having a sample loop 667.

定量ポンプ654の吸引側は、サンプルループ663を
持つ六方バルブ662を介して還元剤添加液槽618に
接続されている。定量ポンプ5 655の吸引側は水槽617に接続されており、定量ポ
ンプ655の吐出側は六方バルブ662および664を
介して希釈槽672に接続されている。
The suction side of the metering pump 654 is connected to the reducing agent addition liquid tank 618 via a six-way valve 662 having a sample loop 663 . The suction side of metering pump 5 655 is connected to water tank 617, and the discharge side of metering pump 655 is connected to dilution tank 672 via six-way valves 662 and 664.

希釈槽672からは、オー1−サンプラー101によっ
て、測定試料が原子吸光光度計102に送られる。希釈
槽672内には、電磁弁682を介して窒素ガスが送ら
れる。電磁弁673は、溶液廃棄用の電磁弁である。
From the dilution tank 672, the sample to be measured is sent to the atomic absorption photometer 102 by the O1-sampler 101. Nitrogen gas is sent into the dilution tank 672 via a solenoid valve 682. The solenoid valve 673 is a solenoid valve for solution disposal.

定量ポンプ657の吸引側は、水W1617に接続して
いる。そして、定量ポンプ657の吐出側からは、六方
バルブ666を介してイオン交換膜チューブ201から
紫外吸収検出器203へと、キャリヤー液(H2O)が
定速で送られる。定量ポンプ658は、再生液槽6王9
から、再生溶液をイオン交換器202の外筒に送る。
The suction side of the metering pump 657 is connected to water W1617. Then, from the discharge side of the metering pump 657, the carrier liquid (H2O) is sent at a constant rate from the ion exchange membrane tube 201 to the ultraviolet absorption detector 203 via the six-way valve 666. The metering pump 658 is connected to the regenerating liquid tank 6
From there, the regeneration solution is sent to the outer cylinder of the ion exchanger 202.

金属成分補充液槽614は、電磁弁636を介して、還
元剤補充液槽615は、電磁弁637を介して、p H
調整液補充液槽61−6は、電磁弁634を介して、水
槽617は、電磁弁639を6− 介して、マニホールド643と結ばれている。そして、
マニホールド643は、補充用の定量ポンプ653の吸
引側に接続している。補充用の定量ポンプ653の吐出
(11114よ、マニホールド: 642を介して電磁
弁631〜635の一方に接続しており、各電磁弁は、
めっき槽61〜65に接続している。
pH
The adjustment fluid replenishment tank 61-6 is connected to the manifold 643 via a solenoid valve 634, and the water tank 617 is connected to the manifold 643 via a solenoid valve 639. and,
The manifold 643 is connected to the suction side of a metering pump 653 for replenishment. The discharge of the metering pump 653 for replenishment (11114, manifold: 642 is connected to one of the solenoid valves 631 to 635, and each solenoid valve is
It is connected to plating tanks 61 to 65.

pHメータの較正、原子吸光光度計↓02の較正、紫外
吸光検出器203の較正、めっき液のpH測定、めっき
液の還元剤成分の濃度測定およびめっき液の金成分の濃
度測定に必要な各操作は。
Each item necessary for calibrating the pH meter, calibrating the atomic absorption photometer↓02, calibrating the ultraviolet absorption detector 203, measuring the pH of the plating solution, measuring the concentration of the reducing agent component in the plating solution, and measuring the concentration of the gold component in the plating solution. The operation.

演算制御手段40↓の指令によりシーケンサ50工によ
って行なわれる。
This is carried out by the sequencer 50 according to a command from the arithmetic control means 40↓.

すなわち、電磁弁620〜630,671゜673.6
81,682、定量ポンプ651〜658、三方バルブ
650、六方バルブ660゜662.664,666、
サンプルループ661゜663.665,667が、シ
ーケンサ501からの指令によって順次作動する。
That is, solenoid valves 620 to 630, 671°673.6
81,682, metering pumps 651-658, three-way valve 650, six-way valve 660°662.664,666,
Sample loops 661, 663, 665, and 667 operate in sequence according to commands from sequencer 501.

シーケンサ50上および演算制御手段4.01の操作の
流れを示す第5図を用いて、測定装置の較正法およびめ
っき液成分の濃度測定法について説明する。第5図にお
いて、二重枠で囲まれた操作は演算制御手段4.01が
行ない、他はシーケンサ501が行なう。
A method for calibrating the measuring device and a method for measuring the concentration of the plating solution components will be described using FIG. 5 showing the flow of operations on the sequencer 50 and the arithmetic control means 4.01. In FIG. 5, the operations enclosed by a double frame are performed by the arithmetic control means 4.01, and the others are performed by the sequencer 501.

pHメータの較正は、以下のようにして行なわれる。Calibration of the pH meter is performed as follows.

電磁づ↑623と三方ハルプロ50と六方バルブ660
とを経て、サンプルループ661内に送りこむ流路を形
威し、定量ポンプ65王を駆動させて、緩衝液4’F、
’ 612に入ったホウ酸すトリウム緩衝液(pH約9
.2)を、サンプルループ661内に採取する。定量ポ
ンプ651−を一定時間駆動後に停止して、ホウ酸ナト
リウlX緩衝液を、フローセル301に流し込む。
Solenoid ↑623, three-way Halpro 50, and six-way valve 660
After forming a flow path to feed the sample into the sample loop 661, the metering pump 65 is driven, and the buffer solution 4'F,
'612 containing thorium borate buffer (pH approx. 9)
.. 2) is collected into the sample loop 661. The metering pump 651- is driven for a certain period of time and then stopped, and the sodium borate IX buffer is poured into the flow cell 301.

p I(緩衝液のpHは、フローセル30土に挿入され
たpH電極302を用いて41す定される。
The pH of the buffer solution is determined using a pH electrode 302 inserted into the flow cell 30.

p I−I測定後、電磁バルブ620を開き、定量ポン
プ65]を駆動させ、p I−1電極セル等の洗浄を行
う。
After the p I-I measurement, the electromagnetic valve 620 is opened, the metering pump 65 is driven, and the p I-1 electrode cell and the like are cleaned.

演算制御手段40 ]には、予めくり返しの予備実験に
より求めた較正値の変動許容範囲を記憶させておき、求
めた較正値の異常値検定を行う。
The arithmetic and control means 40 stores in advance a permissible variation range for calibration values obtained through repeated preliminary experiments, and performs an abnormal value test on the obtained calibration values.

許容範囲は、予めくり返しの予備実験により較正値の変
動中を求め、適切な範囲に設定する。
The permissible range is determined in advance through repeated preliminary experiments during which the calibration value fluctuates, and is set to an appropriate range.

pHメータの較正、および、後述する紫外吸収検出器2
03の較正、原子吸光光度訓1.02の較正、めっき液
成分の濃度測定では、pHメータ303、pH電極30
2、原子吸光光度計↓02、紫外吸収検出器203の異
常やイオン交換器のイオン交換能の低下、各定量ポンプ
の異常、各配管系の液漏れ、配管途中での気泡の発生な
どが直ちに測定機の較正値、めっき液成分の濃度測定値
に影響を与える。
Calibration of pH meter and ultraviolet absorption detector 2 described later
For calibration of 03, calibration of atomic absorption spectrometer 1.02, and concentration measurement of plating solution components, a pH meter 303 and a pH electrode 30 are used.
2. Immediately detect an abnormality in the atomic absorption photometer ↓02, ultraviolet absorption detector 203, decrease in ion exchange capacity of the ion exchanger, abnormality in each metering pump, liquid leakage in each piping system, generation of air bubbles in the middle of the piping, etc. Affects the calibration value of the measuring device and the measured concentration of the plating solution components.

較正値が後述する許容範囲をはずれたときは、警報で作
業者に知らせ、再び測定をするか、あるいは、測定を終
了するかの確認を行なう。こうして、誤った測定値をも
とでの、誤った管理を防ぐ。
If the calibration value falls outside the allowable range, which will be described later, an alarm is issued to notify the operator, and the operator is asked whether to perform the measurement again or to terminate the measurement. In this way, erroneous management based on erroneous measured values is prevented.

紫外吸光光度計669の較正は、以下のようにして行な
われる。
Calibration of the ultraviolet absorption photometer 669 is performed as follows.

9 前述と同様にして、還元剤標準液411611に蓄えら
れた還元剤標準液をサンプルループ661に取り込んだ
後、希釈槽670に送りこむ。定量ポンプ652を一定
時間邸動することにより、水槽617から、希釈槽67
0に−・定量の水を送入して、希釈槽670内で還元剤
標準液を、例えば50倍に希釈する。定量ポンプ656
を駆動して、サンプルループ667内に希釈標準液を採
取する。
9 In the same manner as described above, the reducing agent standard solution stored in the reducing agent standard solution 411611 is taken into the sample loop 661 and then sent to the dilution tank 670. By operating the metering pump 652 for a certain period of time, the water is transferred from the water tank 617 to the dilution tank 67.
0--A fixed amount of water is fed to dilute the reducing agent standard solution, for example, 50 times in the dilution tank 670. Metering pump 656
is driven to collect the diluted standard solution into the sample loop 667.

」二層界釈標準液は、イオン交換膜チューブ201を経
て、測定波長が240 n mに設定されている紫外吸
収検出器203で測定される。
The double-layered standard solution passes through an ion exchange membrane tube 201 and is measured by an ultraviolet absorption detector 203 whose measurement wavelength is set to 240 nm.

50倍に希釈された還元剤標準液を、2回サンブリンク
して測定を行なう。
A reducing agent standard solution diluted 50 times is sampled twice for measurement.

演算制御手段4.01は、2回の測定の平均値を算出し
、異゛ン;(値検定を行う。
The arithmetic control means 4.01 calculates the average value of the two measurements and performs a value test.

異常値検定は、2回くり返して測定された値の平均値お
よびばらつき(差の絶対値)の両方で行う。平均値又は
ばらつきのいずれか一方か、あらかしめ人力された許容
範囲をはずれた場合は、警報で作業者に知らせ、再び測
定をするか、あるい40− は、測定を終了するかの確認を行なう。
The abnormal value test is performed using both the average value and the dispersion (absolute value of difference) of the values measured twice. If either the average value or the dispersion exceeds the predetermined manual tolerance range, an alarm will be issued to notify the operator and ask them to confirm whether they want to take the measurement again or end the measurement. Let's do it.

このため、これら装置の異常を早急に発見てきるように
、許容範囲は、予めくり返しの予備実験により適切な範
囲に設定する。
Therefore, in order to quickly discover abnormalities in these devices, the allowable range is set in advance to an appropriate range through repeated preliminary experiments.

原子吸光光度計102の較正は、以下のようにして行な
われる。
Calibration of the atomic absorption photometer 102 is performed as follows.

標準液は、本実施例で使用するめっき液から還元剤であ
るチオ尿素を除去した金属成分標準液と、チオ尿素溶液
からなる還元剤添加液とを混合した液を用いて行なわれ
る。
The standard solution is a mixture of a metal component standard solution obtained by removing the reducing agent thiourea from the plating solution used in this example, and a reducing agent-added solution consisting of a thiourea solution.

金属取分標準液槽610に蓄えられた金標準液を希釈槽
670内で、紫外吸収検出器の標準液の作成と同様にし
て、例えば50倍希釈する。
The gold standard solution stored in the metal separation standard solution tank 610 is diluted, for example, 50 times, in the dilution tank 670 in the same manner as the standard solution for the ultraviolet absorption detector.

定量ポンプ656を駆動して、サンプルループ665内
に」二層希釈標準液を採取する。この時、同時に定量ポ
ンプ654を駆動して、サンプルループ663内に、還
元剤添加液槽618からチオ尿素溶液を採取する。そし
て六方バルブ664と六方バルブ662とを同時に切換
えて、サンプルループ663内のチオ尿素溶液と、サン
プルループロ65内の希釈標準溶液を同時に希釈槽67
2に送る。
The metering pump 656 is driven to collect the two-layer diluted standard solution into the sample loop 665. At this time, the metering pump 654 is simultaneously driven to collect the thiourea solution from the reducing agent addition liquid tank 618 into the sample loop 663. Then, by switching the six-way valve 664 and the six-way valve 662 simultaneously, the thiourea solution in the sample loop 663 and the diluted standard solution in the sample loop pro 65 are simultaneously transferred to the dilution tank 67.
Send to 2.

さらに、希釈槽672の混合溶液を、例えば、100倍
希釈する。
Further, the mixed solution in the dilution tank 672 is diluted, for example, 100 times.

標準液は、チオ尿素添加液濃度と還元剤添加液濃度とを
調整して、めっき液管理濃度の組成比に近いものにする
The concentration of the thiourea additive solution and the reducing agent additive solution in the standard solution are adjusted to have a composition ratio close to that of the plating solution control concentration.

」二層の方広で得られた標準液は、オートサンプラー1
.01により採取された後、原子吸光光度計102で測
定される。再び、希釈槽672内の標準液をサンプリン
グして測定を行なう。
” The standard solution obtained in the two-layer rectangular solution was
.. 01, and then measured using an atomic absorption spectrophotometer 102. The standard solution in the dilution tank 672 is sampled and measured again.

測定後は、電磁弁671..673を開いて希釈試料を
廃棄し、定量ポンプ652,655てH2Oを送って、
希釈槽670,672の洗浄を行う。
After the measurement, the solenoid valve 671. .. 673 to discard the diluted sample, metering pumps 652 and 655 to send H2O,
The dilution tanks 670 and 672 are cleaned.

また、電磁バルブ620を開いて定量ポンプ651を駆
動させ、標準液採取用の配管系の水洗を行う。
Further, the electromagnetic valve 620 is opened to drive the metering pump 651, and the piping system for collecting the standard solution is washed with water.

演算制御手段4.01は、2回の測定の平均値を算出し
、前述した紫外吸収検出器の異常検定と同様にして異常
値検定を行う。
The arithmetic control means 4.01 calculates the average value of the two measurements, and performs an abnormal value test in the same manner as the abnormality test of the ultraviolet absorption detector described above.

異常値が測定された場合には、警報装置が鳴り作業者に
異常を知らせ、再び測定をするか、あるいは、測定を終
了するかの確認を行なう。
If an abnormal value is measured, an alarm device sounds to notify the operator of the abnormality, and the operator confirms whether to take the measurement again or to end the measurement.

pHメータ303、原子吸光光度計102、紫外吸収検
出器203は、最低1日1回転正を行うとよい。
The pH meter 303, atomic absorption spectrophotometer 102, and ultraviolet absorption detector 203 are preferably rotated in the positive direction at least once a day.

めっき液の成分濃度の測定および補給量の算出について
説明する。
Measurement of component concentration of plating solution and calculation of replenishment amount will be explained.

めっき液のp I−T測定は、以下のようにする。The pIT measurement of the plating solution is performed as follows.

電磁弁626と三方バルブ650と六方バルブ660と
を経て、サンプルループ66↓内に送りこむ流路を形成
し、定量ポンプ651を開動させて、例えばめっき槽1
からめっき液の一部をサンプルループ66」内に採取す
る。定量ポンプ651を一定時間肛動後に停止して、p
F(電極302でめっき液のpHを測定する。その後、
配管系の洗浄を行う。
A flow path is formed to feed into the sample loop 66↓ through the solenoid valve 626, three-way valve 650, and six-way valve 660, and the metering pump 651 is opened and, for example, the plating tank 1 is fed into the sample loop 66↓.
A portion of the plating solution is collected into the sample loop 66''. The metering pump 651 is stopped after anal movement for a certain period of time, and p
F (Measure the pH of the plating solution with the electrode 302. Then,
Clean the piping system.

めっき液の還元剤成分の濃度測定は、以下のようにする
The concentration of the reducing agent component in the plating solution is measured as follows.

定量ポンプ652を一定時間開動して、水槽3 4− 617から、希釈槽670に一定量の水を送入する。そ
の途中、六方バルブ660を切換えて、電磁弁626と
三方バルブ650と六方バルブ660とを経てサンプル
ループ661内に採取しためっき液試料を、同時に希釈
槽670に送り込み、50倍に希釈する。
The metering pump 652 is opened for a certain period of time to feed a certain amount of water from the water tank 34-617 to the dilution tank 670. During the process, the six-way valve 660 is switched, and the plating solution sample collected into the sample loop 661 via the solenoid valve 626, three-way valve 650, and six-way valve 660 is simultaneously fed into the dilution tank 670 and diluted 50 times.

電磁弁681を開いて短時間、窒素ガスを希釈槽670
に流して液の撹拌を行う。
Open the solenoid valve 681 and supply nitrogen gas to the dilution tank 670 for a short time.
to stir the liquid.

希釈槽670内の50倍希釈試料の一部を、サンプルル
ープ667に送りこめるように、六方バルブ664と6
66とを結び、定量ポンプ656を開動して、希釈試料
をサンプルループ667に送る。
Six-way valves 664 and 6 are connected so that a portion of the 50-fold diluted sample in dilution tank 670 can be sent to sample loop 667.
66, the metering pump 656 is activated, and the diluted sample is sent to the sample loop 667.

陰イオン交換膜チューブ201には、定量ポンプ657
により2m11/分の流速てH2Oが常時送られている
。また、六方バルブ666の切換えにより、サンプルル
ープ667内に採取された希釈試料が、陰イオン交換膜
チューブ20↓に送られる。
A metering pump 657 is attached to the anion exchange membrane tube 201.
H2O is constantly supplied at a flow rate of 2 m11/min. Furthermore, by switching the six-way valve 666, the diluted sample collected in the sample loop 667 is sent to the anion exchange membrane tube 20↓.

陰イオン交換器202の陰イオン交換膜チューブ201
の外側には、定量ポンプ658により、再生液槽619
に蓄えられている例えば0.2N陰イオン溶液が、例え
ば2ml/分の流速で送られ、陰イオン交換膜チューブ
20↓は常に塩素イオン型に再生されている。この陰イ
オン交換膜チューブ201内にめっき液試料が送られる
と、めっき液中の亜硫酸イオンとチオ硫酸イオンと全錯
体の配位子等とは、陰イオン交換膜上に捕捉され、代り
に塩素イオンが溶出する。
Anion exchange membrane tube 201 of anion exchanger 202
A regenerating liquid tank 619 is supplied to the outside by a metering pump 658.
For example, a 0.2N anion solution stored in the tube is sent at a flow rate of, for example, 2 ml/min, and the anion exchange membrane tube 20↓ is constantly regenerated into a chloride ion form. When a plating solution sample is sent into this anion exchange membrane tube 201, sulfite ions, thiosulfate ions, and all complex ligands, etc. in the plating solution are captured on the anion exchange membrane and replaced with chlorine. Ions elute.

一方、還元剤であるチオ尿素は、非イオン性物質のため
、陰イオン交換膜チューブ668内で捕捉されることな
く、溶出した塩素イオンと共に紫外吸収検出器203に
送られる。
On the other hand, since the reducing agent thiourea is a nonionic substance, it is not captured within the anion exchange membrane tube 668 and is sent to the ultraviolet absorption detector 203 together with the eluted chlorine ions.

紫外吸収検出器203の測定波長は、チオ尿素が吸収を
示す240nmに設定されている。塩素イオンは240
nmで吸収を示さないため、チオ尿素のみによる吸光度
が測定される。
The measurement wavelength of the ultraviolet absorption detector 203 is set to 240 nm, at which thiourea exhibits absorption. Chlorine ion is 240
Since it shows no absorption at nm, the absorbance due to thiourea alone is measured.

再び、定量ポンプ657を開動して、サンプルループ6
67内に50倍希釈試料を採取し、同様の操作をくり返
し、吸光度を2回測定する。
The metering pump 657 is started again, and the sample loop 6
Collect a 50-fold diluted sample in a 67-mL container, repeat the same operation, and measure the absorbance twice.

めっき液の金成分の濃度測定は、以下のようにする。The concentration of gold components in the plating solution is measured as follows.

上記希釈槽670内にある50倍希釈試料の部を、サン
プルループ665に送りこむように六方バルブ664を
接続し、定5トポンプ656を駆動して、希釈試料をサ
ンプルループ665に送る。
The six-way valve 664 is connected to send the 50-fold diluted sample in the dilution tank 670 to the sample loop 665, and the constant pump 656 is driven to send the diluted sample to the sample loop 665.

六方バルブ664を切換えて、サンプルループ665内
の希釈試料を希釈槽672内に送り込む。
The six-way valve 664 is switched to send the diluted sample in the sample loop 665 into the dilution tank 672 .

同時に、定量ポンプ655を一定時間駆動して、一定量
のH2Oを希釈槽672に送入し、例えば100倍に希
釈する。電磁弁・G82を開いて、窒素ガスで撹拌を行
う。2段希釈された希釈槽672内の試料の一部は、オ
ートサンプラー101−で原子吸光光度計上02に送ら
れ、全濃度の測定が行われる。
At the same time, the metering pump 655 is driven for a certain period of time to feed a certain amount of H2O into the dilution tank 672, thereby diluting it, for example, 100 times. Open the solenoid valve G82 and stir with nitrogen gas. A part of the two-stage diluted sample in the dilution tank 672 is sent to the atomic absorption spectrophotometer 02 by the autosampler 101-, and the total concentration is measured.

再び、オートサンプラー101を稼動し希釈液のサンプ
リングを行ない、全濃度測定を行なう。
The autosampler 101 is operated again to sample the diluted solution and measure the total concentration.

測定後は、電磁弁671,673を開いて希釈試料を廃
棄し、定量ポンプ652,655でH2Oを送って希釈
槽670,672の洗浄を行う。また、電磁バルブ62
5を開いて定量ポンプ651を原動させ、めっき液採取
用の配管系の水洗を行う。
After the measurement, the solenoid valves 671 and 673 are opened to discard the diluted sample, and the metering pumps 652 and 655 are used to send H2O to clean the dilution tanks 670 and 672. In addition, the electromagnetic valve 62
5 is opened to drive the metering pump 651, and the piping system for collecting the plating solution is washed with water.

演算制御手段401は、2回の測定で得られためっき液
の全濃度と還元剤濃度の平均値と、前記標準液を2回く
り返して測定した較正値の平均値との比例計算を、(1
)式のようにして行ない、めっき液中の金およびチオ尿
素濃度を算出する。
The calculation control means 401 performs a proportional calculation between the average value of the total concentration of the plating solution and the reducing agent concentration obtained in the two measurements, and the average value of the calibration values obtained by repeating the measurement of the standard solution twice. 1
) to calculate the gold and thiourea concentrations in the plating solution.

求めるめっき液の濃度 測定値×標準液濃度 較正値      ・・ (1) 測定装置にバックグランドがある場合でも、標準液を目
標管理濃度とほぼ同じ濃度であれば、この近傍での誤差
は極めて小さい。
Measured concentration value of the desired plating solution x standard solution concentration calibration value... (1) Even if there is a background in the measurement device, if the standard solution is at almost the same concentration as the target control concentration, the error in this vicinity is extremely small. .

もちろん、濃度測定方法は」二層方法に限ることはなく
、濃度違いの標準液を数種類用いて検量線を作成しても
よい。
Of course, the concentration measurement method is not limited to the two-layer method, and a calibration curve may be created using several types of standard solutions with different concentrations.

演算制御手段40↓は、算出されためっき液の濃度およ
びp H値が管理濃度の許容範囲に入っているかを検定
する。許容範囲からはすれている場7 8 合には、警報で作業者に知らせ、再び測定をするか、あ
るいは、測定を終了するかの確認を行なう。
The calculation control means 40↓ verifies whether the calculated concentration and pH value of the plating solution are within the permissible range of the control concentration. If the value is outside the allowable range, an alarm is issued to notify the operator and the operator is asked whether to take the measurement again or to terminate the measurement.

こうして、誤った測定値をもとでの、誤った管理を防ぐ
In this way, erroneous management based on erroneous measured values is prevented.

さらに、演算制御手段40]は、算出されためっき液の
濃度と管理濃度との差から、めっきの進行に伴う、成分
の消費量を求めて、補給量を算出する。補充は、補充量
に応じて、電磁弁の開閉時間およびポンプの開動時間を
変える必要があるので、演算制御手段4.01がその制
御を行なう。
Further, the arithmetic control means 40 calculates the amount of component consumption as plating progresses from the difference between the calculated concentration of the plating solution and the control concentration, and calculates the amount of replenishment. Since replenishment requires changing the opening/closing time of the solenoid valve and the opening/closing time of the pump depending on the amount of replenishment, the arithmetic control means 4.01 performs the control.

前記金属成分補充液槽614、還元剤補充液槽6]−5
からめっき液槽への補充は、電磁ハルプロ3]、〜63
5を開き、定量ポンプ653を稼動して行なわれる。
Metal component replenishment tank 614, reducing agent replenishment tank 6]-5
To replenish the plating solution tank, use Electromagnetic Halpro 3], ~63
5 is opened and the metering pump 653 is operated.

金、チオ尿素の補充液の濃度、めっき槽の液量、定量ポ
ンプ653の流速などから金、チオ尿素の補給時間を算
出し、電磁弁636および637を順次所定時間開放し
て、必要量を補充する。
The replenishment time for gold and thiourea is calculated from the concentration of the gold and thiourea replenisher, the liquid volume in the plating tank, the flow rate of the metering pump 653, etc., and the solenoid valves 636 and 637 are sequentially opened for a predetermined time to obtain the required amount. refill.

p Hm整波の補充は、めっき液のpH測定値に応して
、予め設定した補充時間だけ電磁弁638を開いてp 
H調整液の補給を行う。
To replenish the p Hm wave, open the solenoid valve 638 for a preset replenishment time according to the measured pH value of the plating solution.
Replenish H adjustment fluid.

各補充液の補充後には、その都度電磁弁639を一定時
間開いて、配管系を水で洗浄する。
After replenishing each replenisher, the solenoid valve 639 is opened for a certain period of time to wash the piping system with water.

さらに、本実施例の演算制御手段は、陰イオン交換器2
02のイオン交換能をチエツクするプログラムを備えて
いる。
Furthermore, the arithmetic control means of this embodiment includes the anion exchanger 2
Equipped with a program to check the ion exchange ability of 02.

めっき液中のチオ尿素濃度のみが許容巾を上回った場合
、その原因として、陰イオン交換器202のイオン交換
能の低下が考えられる。この時、作業者のプログラム選
択により、以下の操作(自動)でチエツクを行うことが
できる。
If only the thiourea concentration in the plating solution exceeds the allowable range, the cause may be a decrease in the ion exchange capacity of the anion exchanger 202. At this time, the check can be performed by the following operation (automatically) depending on the operator's program selection.

このプログラム選択は、演算制御手段4. O]のキー
ボード(図示せず)等の入力装置から指示することがで
きる。
This program selection is performed by the calculation control means 4. Instructions can be given from an input device such as a keyboard (not shown).

即ち、電磁弁624を開いて定量ポンプ651によりN
a2S、、03溶液をサンプルループ661に採取し、
それを希釈槽670内で希釈した後に、チオ尿素濃度測
定と同様の方法で、紫外吸光光度計203による吸光度
の測定を行う。
That is, the solenoid valve 624 is opened and the metering pump 651 is used to supply N.
Collect the a2S,,03 solution into the sample loop 661,
After diluting it in the dilution tank 670, the absorbance is measured using the ultraviolet absorption photometer 203 in the same manner as the thiourea concentration measurement.

もし、陰イオン交換器202のイオン交換能が正常であ
れば、チオ硫酸イオンはすへて陰イオン交換膜りに捕捉
され、代りに塩素イオンが溶出するため、紫外吸光度は
ゼロとなる。しかし、陰イオン交換能が低下した場合、
チオ硫酸イオンの一部または全部がそのまま紫外吸収検
出器203に送られるため、何らかの吸光度を示し、容
易に異常を発見することができる。
If the ion exchange ability of the anion exchanger 202 is normal, the thiosulfate ions will be captured by the anion exchange membrane and the chlorine ions will be eluted instead, so the ultraviolet absorbance will be zero. However, if the anion exchange capacity decreases,
Since some or all of the thiosulfate ions are sent as they are to the ultraviolet absorption detector 203, they exhibit some kind of absorbance and can easily detect abnormalities.

以下、これまで述べた実施例の作用について説明する。Hereinafter, the effects of the embodiments described so far will be explained.

亜硫酸イオンやチオ硫酸イオン等の還元性イオンと、硫
酸イオンやチオ硫酸イオンを配位子とする全錯体とを含
むめっき液を、塩素イオンを吸着した陰イオン交換膜に
通すと、陰イオン交換物質に対する親和性の大きい亜硫
酸イオンやチオ硫酸イオンが陰イオン交換物質に捕捉さ
れ、代りに等当量の塩素イオンが溶出される。
When a plating solution containing reducing ions such as sulfite ions and thiosulfate ions and total complexes with sulfate ions and thiosulfate ions as ligands is passed through an anion exchange membrane that has adsorbed chlorine ions, anion exchange occurs. Sulfite ions and thiosulfate ions, which have a high affinity for the substance, are captured by the anion exchange material, and an equivalent amount of chlorine ions are eluted instead.

こうして、めっき液中に含まれる還元性イオンを、めっ
き液中に含まれる還元剤の定量分析のall定妨害をし
ない陰イオンに交換する。。
In this way, the reducing ions contained in the plating solution are exchanged with anions that do not interfere with the quantitative analysis of the reducing agent contained in the plating solution. .

しかし、チオ尿素は、J「イオン性のためにlIλイオ
ン交換膜には捕捉されず、そのまま陰イオン交換器から
流出する。チオ尿素の濃度は、塩素イオンが紫外吸収を
示さないために、陰イオン交換器の後に設けた紫外吸収
検出器で、正確に測定することができる。
However, due to its ionic nature, thiourea is not captured by the lIλ ion exchange membrane and flows out from the anion exchanger as it is. Accurate measurements can be made with an ultraviolet absorption detector installed after the ion exchanger.

もし、還元剤か、例えばホルムアルデヒドのように紫外
吸収を示さない物質の場合には、紫外吸収検出器ではな
く電位差滴定装置を設けると、ポル11アルデヒlくの
酸化に要する電流量から濃度を算出することができる。
If the reducing agent is a substance that does not exhibit ultraviolet absorption, such as formaldehyde, a potentiometric titration device rather than an ultraviolet absorption detector can be used to calculate the concentration from the amount of current required to oxidize pol-11 aldehyde. can do.

この時にも、塩素イオンは測定の妨害を行なわない。但
し、測定溶液の濃度が、紫外吸収検出器を使用してチオ
尿素の濃度を測定する場合と異なる。
At this time, the chloride ions do not interfere with the measurement. However, the concentration of the measurement solution is different from that when measuring the concentration of thiourea using an ultraviolet absorption detector.

金成分の定量分析を行なうためには、原子吸光法ではな
くプラズマ発光分光分析等の分析装置を用いてもよい。
In order to quantitatively analyze the gold component, an analyzer such as a plasma emission spectrometer may be used instead of the atomic absorption method.

但し、−殻内にプラズマ発光分光分析は原子吸光法に比
へ、測定装置が大型化してしまう。
However, in-shell plasma emission spectrometry requires a larger measuring device than atomic absorption spectrometry.

特に、実施例−3の濃度管理装置では、原子吸光光度計
の標準液として、金属成分のみでなく、1 2 金属成分と還元剤成分を混合した標準液を用いて、原子
吸光法で生じがちな測定値の変動を防止する。
In particular, in the concentration control device of Example 3, a standard solution containing not only metal components but also a mixture of 1 2 metal components and reducing agent components is used as the standard solution for the atomic absorption spectrophotometer, and it is possible to detect Prevents fluctuations in measured values.

さらに、金属成分と還元剤成分を41す定直前に混合す
ることにより、液分解を起こしていない標7(li液を
作り、精度の良いalす定を行なうことができる。
Furthermore, by mixing the metal component and the reducing agent component immediately before the 41 step, it is possible to prepare a standard 7 (Li solution) that does not undergo liquid decomposition and perform an accurate 1 step measurement.

p Hの測定は、1日1回行なオ)れるが、複数回行な
われてもよい。
pH measurement is carried out once a day, but may be carried out multiple times.

本実施例では、測定装置による測定および較正をシーケ
ンサを用いて制御して、自動化を行なっているが、シー
ケンサを用いることなく、演算制御手段を使用し、で、
測定装置による測定および較正を制御を行なってもよい
In this embodiment, the measurement and calibration by the measuring device are automated by controlling them using a sequencer, but instead of using a sequencer, arithmetic control means are used.
Measurement and calibration by the measuring device may be controlled.

演算制御手段は、測定装置から送られる測定値と較正値
とを取り込み、上述した(1)式に従い、濃度言イ算を
行なう。求められためっき液の濃度と管理濃度との差か
ら、めっきの進行に伴う、成分の消費量を求めて補充量
を算出する。そして、消耗成分量の情報に従い、補充液
槽から消費量分を逐次補給することにより、めっき液の
成分濃度を常に一定範囲内に管理する。この結果、めっ
き速度を一定に保つことができる。
The arithmetic control means takes in the measured value and the calibration value sent from the measuring device, and calculates the concentration according to the above-mentioned equation (1). From the difference between the determined concentration of the plating solution and the control concentration, the consumption amount of the component as plating progresses is determined and the replenishment amount is calculated. Then, the component concentration of the plating solution is always managed within a certain range by sequentially replenishing the consumed amount from the replenisher tank according to the information on the amount of consumed components. As a result, the plating speed can be kept constant.

さらに、演算制御手段は、めっき液の成分濃度の測定値
の異常検定を行ない、測定値によっては、再測定や装置
のチエツクを直ちに行う。こうして、i11’l & 
(直のイ1f頼性を同士させる。
Furthermore, the arithmetic control means performs an abnormality check on the measured value of the component concentration of the plating solution, and depending on the measured value, immediately performs re-measurement or checks the apparatus. Thus, i11'l &
(Make the direct I1F reliability the same.

実施例−3の濃度管理装置を用いて、1時間毎にpHお
よび金、チオ尿素の濃度を測定し、P H調整液、金お
よびチオ尿素補充液の補充を行いつつ、]、 dm2/
 Qの負荷て約20時間のめっきを行った。
Using the concentration control device of Example-3, the pH and the concentrations of gold and thiourea were measured every hour, and while replenishing the pH adjustment solution and the gold and thiourea replenishment solution, ], dm2/
Plating was carried out for about 20 hours under a load of Q.

この時、pHは9〜9.1、全濃度は管理濃度±5%、
チオ尿素濃度は管理濃度±3%の範囲内に自動制御でき
たために、めっき速度を1.0〜0.85μm/時間の
範囲に調整することができた。
At this time, the pH was 9 to 9.1, and the total concentration was ±5% of the control concentration.
Since the thiourea concentration could be automatically controlled within the range of ±3% of the control concentration, the plating rate could be adjusted within the range of 1.0 to 0.85 μm/hour.

はぼ同様な結果を、実施例−2の濃度管理装置でも得た
Similar results were obtained with the concentration control device of Example-2.

以上のように、本発明の濃度管理装置は、めっき進行中
、めっき速度を一定に保つので、ムラのない均一なめっ
きを行なうことができる。即ち、本実施例の濃度管理装
置は、優れためつき装置として使用することができる。
As described above, the density control device of the present invention maintains the plating speed constant during the plating process, so that uniform plating can be performed without unevenness. That is, the concentration control device of this embodiment can be used as an excellent tampering device.

さらに、本発明の濃度管理装置は、非シアン系無電解め
っき液以外の各種めっき液でも、補充液と標準液とを、
用いるめっき液成分によって適宜変更することにより、
め−、き液へ分の酸度を管理することができる。また、
同様に、非シアン系無電解めっき装置にも適用すること
もてきる。
Furthermore, the concentration control device of the present invention can control the replenishment solution and the standard solution even in various plating solutions other than non-cyanide electroless plating solutions.
By appropriately changing the components of the plating solution used,
Therefore, it is possible to control the acidity of the liquid. Also,
Similarly, it can also be applied to non-cyanide electroless plating equipment.

実施例−2,3の濃度管理装置は、金成分の濃度分析に
原子吸光光度計を使用しているが、測定する金属成分に
合った分析装置を選択した金属成分濃度測定手段を設け
ることができる。同様に、還元剤成分の濃度分析に紫外
吸収検出器を使用しているが、還元剤以外の非金属成分
濃度をdlす定できるような非金属成分測定手段を設け
ることができる。
The concentration control devices of Examples 2 and 3 use an atomic absorption spectrophotometer to analyze the concentration of the gold component, but it is also possible to provide a metal component concentration measuring means by selecting an analyzer suitable for the metal component to be measured. can. Similarly, although an ultraviolet absorption detector is used to analyze the concentration of the reducing agent component, it is possible to provide a nonmetallic component measuring means that can determine the concentration of nonmetallic components other than the reducing agent.

」二層のような金属成分測定手段および非金属成分測定
手段を備えた濃度管理装置の演算制御手段は、実施例−
2,3で述べたような演算制御手段を使用することがで
きる。
The arithmetic control means of the concentration control device equipped with a metal component measuring means and a non-metallic component measuring means such as a double layer is as described in the embodiment-
Arithmetic control means such as those described in 2 and 3 can be used.

例えば、金属成分測定手段としてポーラロクラフを、例
えば、非金属成分測定手段として液体クロマトグラフを
備えた濃度管理装置は、めっき槽ではなく、例えば、工
場排水等の廃液槽に連結することにより、金属成分測定
手段が、例えばカドミウムの濃度を、非金属成分測定手
段が、例えばケトン等の有機物の濃度を測定して、工場
排水の水質管理ができる。この時、工場排水に含まれる
金属成分や非金属成分に従って、用いる標準液および補
充液は適宜変更される。
For example, a concentration control device equipped with a polarograph as a means for measuring metal components and a liquid chromatograph as a means for measuring non-metal components can be connected not to a plating tank but to, for example, a waste liquid tank such as factory wastewater, so that metal components can be measured. The measuring means measures the concentration of, for example, cadmium, and the non-metal component measuring means measures, for example, the concentration of organic substances such as ketones, thereby making it possible to manage the water quality of factory wastewater. At this time, the standard solution and replenisher to be used are changed as appropriate depending on the metal components and non-metal components contained in the factory wastewater.

さらに、本発明の濃度測定方法は、例えば、河川等の水
質検査などにも使用できる。
Furthermore, the concentration measuring method of the present invention can be used, for example, for water quality testing of rivers and the like.

(以下余白) 5 6− [発明の効果] 以−に詳細に説明したごとく、本発明のめっき液の成分
濃度の測定方法によれば、めっき液中に共存する陰イオ
ンを還元剤の測定に妨害を示さない他の陰イオン種に変
換して還元剤の濃度を測定することができるので、めっ
き液中の還元剤の濃度の高精度測定ができる。
(The following is a blank space.) 5 6- [Effects of the Invention] As explained in detail below, according to the method for measuring the component concentration of a plating solution of the present invention, anions coexisting in the plating solution can be used to measure the reducing agent. Since the concentration of the reducing agent can be measured by converting it into another anion species that does not cause interference, the concentration of the reducing agent in the plating solution can be measured with high precision.

さらに、−1−記方法を用いた装置に、めっき液の消費
量を演算し、補給する機能を備えると、めっき液の成分
濃度を、常に一定範囲内に調整することができ、めっき
液の自動管理を達成することができる。
Furthermore, if the equipment using the method described in -1- is equipped with a function to calculate the amount of plating solution consumed and replenish it, the component concentration of the plating solution can be always adjusted within a certain range. Automatic management can be achieved.

また、金属I成分濃度測定部と非金属成分濃度測定部と
演算制御部とを有する本発明の濃度管理装置は、溶液中
の金属成分の濃度と非金属成分の濃度を測定できる。各
測定値が前もって決められている許容範囲をはずれてい
るときには、演算制御部が働き、補充液槽に蓄えられた
補充液か添加されることにより、溶液の各成分濃度を許
容範囲に納めることかできる。
Further, the concentration management device of the present invention, which includes a metal I component concentration measurement section, a nonmetal component concentration measurement section, and an arithmetic control section, can measure the concentration of metal components and the concentration of nonmetal components in a solution. When each measured value is outside a predetermined tolerance range, the calculation control unit operates and adds the replenisher stored in the replenisher tank to bring the concentration of each component of the solution within the tolerance range. I can do it.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の濃度測定方法に用いられる濃度測定装
置の一実施例の構成を示す系統図、第2図はチオ尿素、
尿素およびKCQの紫外吸収スベク1−ル図、第3図は
本発明の濃度調整に用いられる濃度調整装置の一実施例
の構成を示す系統図、第4図は本発明を適用してめっき
液の調整を行なうめっき装置の一実施例を示す系統図、
第5図は第4図に示した実施例に用いられる演算制御手
段の動作を示すフローチャー1〜、第6図は補充液を加
えずに非シアン系めっき液を用いてめっきを行なった場
合の成分の経時変化を示すグラフ、第7図はめっきの進
行と共に補充液を加えて非シアン系めっき液を用いてめ
っきを行なった場合の1戊分の経時変化とめっき速度の
経時変化を示すグラフである。 7・・・陰イオン交換器、8 陰イオン交換膜チューブ
、9・・・紫外吸収検出器、]]・演算制御装置、11
・・・全標準液槽、12・チオ尿素標準液槽、13・め
っき槽、14・・全補給液槽、15 チオ尿素補給液槽
、35・・・原子吸光光度計、610金属成分標準液槽
、61]・還元剤標準液槽、612 ・−pT(緩衝液
槽、613 ”’ Na2S、03溶液槽、614 金
属成分補充液槽、615・・還元剤補充液槽、616 
・p H調整液補充液槽、618・・・還元剤添加液槽
、61−9・・再生液槽、101オートサンプラー、1
02・原子吸光光度計、201・・陰イオン交換膜チュ
ーブ、202・・・陰イオン交換器、203・・・紫外
吸収検出器、301フローセル、302・・pH電極、
303  pHメータ、4.01・・演算制御手段。
FIG. 1 is a system diagram showing the configuration of an embodiment of the concentration measuring device used in the concentration measuring method of the present invention, and FIG. 2 shows thiourea,
An ultraviolet absorption spectrum diagram of urea and KCQ, FIG. 3 is a system diagram showing the configuration of an embodiment of the concentration adjustment device used for concentration adjustment of the present invention, and FIG. A system diagram showing an example of a plating apparatus that adjusts
Fig. 5 is a flowchart 1 to 1 showing the operation of the calculation control means used in the embodiment shown in Fig. 4, and Fig. 6 is a case in which plating is performed using a non-cyanide plating solution without adding a replenisher. Figure 7 is a graph showing changes over time in the components of plating. Figure 7 shows changes over time for one minute and changes over time in plating speed when plating is performed using a non-cyanide plating solution by adding replenisher as plating progresses. It is a graph. 7... Anion exchanger, 8 Anion exchange membrane tube, 9... Ultraviolet absorption detector,]]・Arithmetic control device, 11
...All standard solution tanks, 12. Thiourea standard solution tank, 13. Plating tank, 14.. All replenishment solution tanks, 15. Thiourea replenishment solution tank, 35.. Atomic absorption spectrophotometer, 610 Metal component standard solution. tank, 61]・Reducing agent standard solution tank, 612・-pT (buffer solution tank, 613 ”′ Na2S, 03 solution tank, 614 Metal component replenishment solution tank, 615・・Reducing agent replenishment solution tank, 616
・pH adjustment liquid replenishment liquid tank, 618... Reducing agent addition liquid tank, 61-9... Regeneration liquid tank, 101 Auto sampler, 1
02. Atomic absorption photometer, 201.. Anion exchange membrane tube, 202.. Anion exchanger, 203.. Ultraviolet absorption detector, 301 Flow cell, 302.. pH electrode,
303 pH meter, 4.01... Arithmetic control means.

Claims (12)

【特許請求の範囲】[Claims] 1.金属成分、陰イオンおよび還元剤を含むめっき液の
成分濃度の測定方法であって、 前記陰イオンを、前記還元剤の濃度測定に妨害を与えな
い他の陰イオン種に置換した後、前記還元剤濃度を測定
することを特徴とするめっき液の成分濃度測定法。
1. A method for measuring the component concentration of a plating solution containing a metal component, an anion, and a reducing agent, the method comprising: replacing the anion with another anion species that does not interfere with the measurement of the concentration of the reducing agent; A method for measuring component concentration of a plating solution, which is characterized by measuring agent concentration.
2.金属成分、陰イオンおよび還元剤を含むめっき液の
成分濃度の測定方法であって、 前記陰イオンを、前記還元剤の濃度測定に妨害を与えな
い他の陰イオン種に置換した後、前記還元剤濃度を測定
し、 さらに、原子吸光法またはプラズマ発光分析法によって
、前記金属成分の濃度を測定することを特徴とするめっ
き液の成分濃度測定方法。
2. A method for measuring the component concentration of a plating solution containing a metal component, an anion, and a reducing agent, the method comprising: replacing the anion with another anion species that does not interfere with the measurement of the concentration of the reducing agent; A method for measuring the concentration of a component in a plating solution, comprising: measuring the concentration of the agent, and further measuring the concentration of the metal component by atomic absorption spectrometry or plasma emission spectrometry.
3.前記還元剤濃度を、紫外吸収検出器または電位差滴
定装置で測定することを特徴とする請求項1または2記
載のめっき液の成分濃度測定方法。
3. 3. The method for measuring the component concentration of a plating solution according to claim 1, wherein the reducing agent concentration is measured using an ultraviolet absorption detector or a potentiometric titration device.
4.金属成分と、還元性イオンと、非イオン性還元剤と
を含むめっき液の成分濃度測定方法であって、 前記還元性イオンを非還元性イオンに置換した後、前記
非イオン性還元剤の濃度測定および前記金属成分の濃度
測定を行なうことを特徴とするめっき液の成分濃度測定
方法。
4. A method for measuring component concentration of a plating solution containing metal components, reducing ions, and a nonionic reducing agent, the method comprising: replacing the reducing ions with non-ionic ions, and then measuring the concentration of the nonionic reducing agent. 1. A method for measuring component concentration of a plating solution, comprising: measuring and measuring the concentration of the metal component.
5.めっき液中の金属成分濃度の測定およびこの測定に
用いる金属成分濃度測定手段の較正と、めっき液中の還
元剤濃度の測定およびこの測定に用いる還元剤濃度測定
手段の較正と、めっき液中の陰イオンを前記還元剤の濃
度測定に妨害を与えない他の陰イオン種に置換する操作
とを、予め設定したシーケンスプログラムに従って、シ
ーケンス制御で行ない、 さらに、前記測定によって求められた測定値と前記較正
によって求められた較正値とから、めっき液中の金属成
分濃度と還元剤濃度濃度を演算によって求めることを特
徴とするめっき液の成分濃度測定方法。
5. Measuring the metal component concentration in the plating solution and calibrating the metal component concentration measuring means used for this measurement; measuring the reducing agent concentration in the plating solution and calibrating the reducing agent concentration measuring means used for this measurement; The operation of replacing the anion with another anion species that does not interfere with the measurement of the concentration of the reducing agent is performed under sequence control according to a preset sequence program, and further, the measurement value obtained by the measurement and the A method for measuring the concentration of components in a plating solution, characterized in that the concentration of a metal component and the concentration of a reducing agent in the plating solution are determined by calculation from a calibration value obtained through calibration.
6.金属成分、陰イオンおよび還元剤を含むめっき液の
濃度調整方法であって、 めっき液中の陰イオンを前記還元剤の濃度測定に妨害を
与えない他の陰イオン種に置換した後、 前記金属成分を測定する金属成分濃度測定手段の較正お
よび前記還元剤成分を測定する還元剤濃度測定手段の較
正と、前記金属成分濃度測定手段による金属成分濃度の
測定および前記還元剤濃度測定手段による還元剤濃度の
測定とから求められた較正値および測定値により、金属
成分濃度と還元剤濃度濃度との消費量を演算によって求
め、 さらに、前記消費量に相当する還元剤および金属成分を
含む補充液をめっき液に補充することを特徴とするめっ
き液の濃度調整方法。
6. A method for adjusting the concentration of a plating solution containing a metal component, an anion, and a reducing agent, the method comprising: replacing the anion in the plating solution with another anion species that does not interfere with measurement of the concentration of the reducing agent; Calibration of the metal component concentration measuring means for measuring the component; Calibration of the reducing agent concentration measuring means for measuring the reducing agent component; Measurement of the metal component concentration by the metal component concentration measuring means; and Reducing agent concentration by the reducing agent concentration measuring means Calculate the consumption amount of the metal component concentration and reducing agent concentration using the calibration value and the measured value obtained from the concentration measurement, and then add a replenisher containing the reducing agent and metal component corresponding to the consumption amount. A method for adjusting the concentration of a plating solution, which comprises replenishing the plating solution.
7.金属成分、陰イオンおよび還元剤を含むめっき液の
成分濃度の調整装置であって、 前記陰イオンを、還元剤の濃度測定を妨害しない陰イオ
ン種に置換するイオン交換手段と、前記陰イオン種を含
む溶液を用いて前記イオン交換手段を再生する再生手段
と、 前記還元剤濃度を測定するための還元剤濃度測定手段と
、 前記金属成分濃度を測定する金属成分濃度測定手段と、 前記還元剤濃度測定手段および前記金属成分濃度測定手
段の較正と、還元剤濃度測定手段および前記金属成分濃
度測定手段によるめっき液成分の測定とを制御するシー
ケンス制御手段と、さらに、前記測定によって求められ
た測定値と前記較正によって求められた較正値とから、
めっき液中の金属成分濃度と還元剤濃度濃度を演算する
演算制御手段とを有することを特徴とするめっき液の成
分濃度測定装置。
7. An apparatus for adjusting the component concentration of a plating solution containing a metal component, an anion, and a reducing agent, comprising: an ion exchange means for replacing the anion with an anion species that does not interfere with measurement of the concentration of the reducing agent; a regenerating means for regenerating the ion exchange means using a solution containing the reducing agent; a reducing agent concentration measuring means for measuring the reducing agent concentration; a metal component concentration measuring means for measuring the metal component concentration; a sequence control means for controlling calibration of the concentration measuring means and the metal component concentration measuring means; and measurement of plating solution components by the reducing agent concentration measuring means and the metal component concentration measuring means; From the value and the calibration value obtained by the calibration,
1. A component concentration measuring device for a plating solution, comprising a calculation control means for calculating a metal component concentration and a reducing agent concentration in the plating solution.
8.金属成分、陰イオンおよび還元剤を含むめっき液の
成分濃度の調整装置であって、 前記陰イオンを、還元剤の濃度測定を妨害しない陰イオ
ン種に置換するイオン交換手段と、前記陰イオン種を含
む溶液を用いて前記イオン交換手段を再生する再生手段
と、 前記還元剤濃度を測定するための還元剤濃度測定手段と
、 前記金属成分濃度を測定する金属成分濃度測定手段と、 前記還元剤濃度測定手段および前記金属成分濃度測定手
段の動作を制御するシーケンス制御手段と、 前記還元剤濃度および前記金属成分濃度の測定値と、そ
れぞれの設定濃度との差から還元剤および金属成分の消
費量を算出する算出手段、および、前記消費量に相当す
る還元剤および金属成分を含む補充液を、めっき槽へ供
給する供給手段を備えた演算制御手段とを有することを
特徴とするめっき液の成分濃度調整装置。
8. An apparatus for adjusting the component concentration of a plating solution containing a metal component, an anion, and a reducing agent, comprising: an ion exchange means for replacing the anion with an anion species that does not interfere with measurement of the concentration of the reducing agent; a regenerating means for regenerating the ion exchange means using a solution containing the reducing agent; a reducing agent concentration measuring means for measuring the reducing agent concentration; a metal component concentration measuring means for measuring the metal component concentration; a sequence control means for controlling the operations of the concentration measuring means and the metal component concentration measuring means; determining the consumption of the reducing agent and the metal component from the difference between the measured values of the reducing agent concentration and the metal component concentration and their respective set concentrations; Components of a plating solution, characterized in that it has a calculation means for calculating the consumption amount, and an arithmetic control means equipped with a supply means for supplying a replenisher containing a reducing agent and a metal component corresponding to the consumption amount to a plating tank. Concentration adjustment device.
9.金属成分、陰イオンおよび還元剤を含むめっき液を
用いてめっきを行なうめっき装置であって、 前記めっき装置は、めっき槽とめっき液濃度測定手段、
めっき液補充手段、シーケンス制御手段および演算制御
手段を含み、 前記めっき液濃度測定手段は、前記陰イオンを還元剤の
濃度測定を妨害しない他の陰イオン種に置換するイオン
交換手段と、前記還元剤濃度を測定する還元剤濃度測定
手段と、前記金属成分濃度を測定する金属濃度測定手段
とを備え、前記シーケンス制御手段は、前記めっき液濃
度測定手段の動作を制御し、 前記演算制御手段は、前記還元剤濃度および金属成分濃
度の測定値と、それぞれの設定濃度との差から還元剤お
よび金属成分の消費量を算出する算出手段と、前記消費
量に相当する還元剤および金属成分を含む補充液を、前
記めっき液補充部からめっき槽へ供給する供給手段とを
備えたことを特徴とするめっき装置。
9. A plating apparatus that performs plating using a plating solution containing a metal component, an anion, and a reducing agent, the plating apparatus comprising a plating tank, a plating solution concentration measuring means,
The plating solution concentration measuring means includes a plating solution replenishing means, a sequence control means, and an arithmetic control means; comprising a reducing agent concentration measuring means for measuring agent concentration and a metal concentration measuring means for measuring the metal component concentration, the sequence control means controlling the operation of the plating solution concentration measuring means, and the calculation control means , calculation means for calculating the consumption amount of the reducing agent and the metal component from the difference between the measured values of the reducing agent concentration and the metal component concentration and the respective set concentrations, and the reducing agent and the metal component corresponding to the consumption amount. A plating apparatus comprising a supply means for supplying a replenisher from the plating solution replenisher to a plating tank.
10.溶液中に含まれる金属成分の濃度を測定する金属
成分濃度測定手段と、非金属成分濃度を測定する非金属
成分濃度測定手段とを備え、 さらに、前記金属成分濃度測定手段および前記非金属成
分濃度測定手段の動作を制御する制御機能と、前記金属
成分の濃度および前記非金属成分の濃度の測定値と、そ
れぞれの設定濃度との差から金属成分と非金属成分の消
費量に相当する、金属成分を含む補充液と非金属成分を
含む補充液を供給する供給機能とを備えたことを特徴と
する濃度管理装置。
10. A metal component concentration measuring means for measuring the concentration of a metal component contained in a solution, and a non-metal component concentration measuring means for measuring a non-metal component concentration, further comprising: the metal component concentration measuring means and the non-metal component concentration. A control function that controls the operation of the measuring means, and a metal that corresponds to the consumption amount of the metal component and the non-metal component based on the difference between the measured values of the concentration of the metal component and the concentration of the non-metal component and the respective set concentrations. What is claimed is: 1. A concentration control device comprising: a replenisher containing a component; and a supply function for supplying a replenisher containing a non-metallic component.
11.上記金属成分濃度測定手段は、原子吸光光度計ま
たはプラズマ発光分光光度計であることを特徴とする請
求項10記載の濃度管理装置。
11. 11. The concentration control device according to claim 10, wherein the metal component concentration measuring means is an atomic absorption spectrophotometer or a plasma emission spectrophotometer.
12.上記非金属濃度測定手段は、陰イオン交換器、お
よび、紫外吸収検出器または電位差滴定装置を有するこ
とを特徴とする請求項10または11記載の濃度管理装
置。
12. 12. The concentration control device according to claim 10, wherein the nonmetal concentration measuring means includes an anion exchanger, and an ultraviolet absorption detector or a potentiometric titration device.
JP1323213A 1989-04-21 1989-12-13 Plating solution concentration measurement method, concentration adjustment method, and concentration adjustment device Pending JPH0364482A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-100007 1989-04-21
JP10000789 1989-04-21

Publications (1)

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JPH0364482A true JPH0364482A (en) 1991-03-19

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316769A (en) * 1993-01-26 1994-11-15 Nippon Parkerizing Co Ltd Device and method for intermittently removing metal ion and contaminants from chemical bath
US5723339A (en) * 1996-04-15 1998-03-03 International Business Machines Corporation Method of analyzing gold electroplating solutions for arsenic(III)
JP2018100442A (en) * 2016-12-21 2018-06-28 住友金属鉱山株式会社 Method for measuring plating time of electroless plating solution, method for preparing sample, capable of preparing sample for evaluating electroless plating solution, and method for evaluating electroless plating solution
US10286102B2 (en) 2010-05-11 2019-05-14 Howmedica Osteonics Corp Organophosphorous, multivalent metal compounds, and polymer adhesive interpenetrating network compositions and methods

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6224899B1 (en) 1997-03-18 2001-05-01 Kobayashi Pharmaceutical Co., Ltd. Adhesive cooling composition and process for its preparation
CN117396640A (en) * 2021-06-10 2024-01-12 科磊股份有限公司 Non-reagent methods and process controls for measuring and monitoring halogen concentrations in electroplating solutions for ferrous ternary metals and their alloys

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6361620A (en) * 1986-09-02 1988-03-17 Hitachi Constr Mach Co Ltd Ram-lock control device for work vehicle

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6361620A (en) * 1986-09-02 1988-03-17 Hitachi Constr Mach Co Ltd Ram-lock control device for work vehicle

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316769A (en) * 1993-01-26 1994-11-15 Nippon Parkerizing Co Ltd Device and method for intermittently removing metal ion and contaminants from chemical bath
US5723339A (en) * 1996-04-15 1998-03-03 International Business Machines Corporation Method of analyzing gold electroplating solutions for arsenic(III)
US10286102B2 (en) 2010-05-11 2019-05-14 Howmedica Osteonics Corp Organophosphorous, multivalent metal compounds, and polymer adhesive interpenetrating network compositions and methods
JP2018100442A (en) * 2016-12-21 2018-06-28 住友金属鉱山株式会社 Method for measuring plating time of electroless plating solution, method for preparing sample, capable of preparing sample for evaluating electroless plating solution, and method for evaluating electroless plating solution

Also Published As

Publication number Publication date
JPH0364483A (en) 1991-03-19
JP2742128B2 (en) 1998-04-22

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